SORTING OF CARBON NANOTUBES

Abstract

Provided is a process for preparing a composition comprising semiconducting single-walled carbon nanotubes, a semiconducting polymer and solvent A (composition A), which process comprises the step of separating composition A from a composition comprising semiconducting and metallic single-walled carbon nanotubes, the semiconducting polymer and solvent B (composition B), wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A and B comprise an aromatic or a heteroaromatic solvent, composition A itself, a process for forming an electronic device, which process comprises the step of forming a layer by applying composition A to a precursor of the electronic device, as well as the electronic device obtainable by this process.

Claims

1: A process for preparing a composition A, the composition A comprising semiconducting single-walled carbon nanotubes, a semiconducting polymer and solvent A, which process comprises separating composition A from a composition B, the composition B comprising semiconducting and metallic single-walled carbon nanotubes, the semiconducting polymer and solvent B, wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A and solvent B comprise an aromatic or heteroaromatic solvent.

2: The process of claim 1, wherein the semiconducting polymer has a band gap in the range of 0.6 to 1.7 eV.

3: The process of claim 1, wherein the semiconducting polymer is a polymer comprising at least one unit of formula ##STR00103## or of formula ##STR00104## wherein b and c are independently from each other 1, 2, 3, 4, 5 or 6, a and d are independently from each other 0, 1, 2, 3 or 4, n and m are independently from each other 0, 1, 2, 3 or 4, R.sup.1 is at each occurrence selected from the group consisting of H, C.sub.1-100-alkyl, C.sub.2-100-alkenyl, C.sub.2-100-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl, a 5 to 20 membered heteroaryl, C(O)—C.sub.1-100-alkyl, C(O)—C.sub.5-12-cycloalkyl and C(O)—OC.sub.1-100-alkyl, wherein C.sub.1-100-alkyl, C.sub.2-100-alkenyl and C.sub.2-100-alkynyl can be substituted with one to forty substituents independently selected from the group consisting of C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.a, OC(O)—R.sup.a, C(O)—OR.sup.a, C(O)—R.sup.a, NR.sup.aR.sup.b, NR.sup.a—C(O)R.sup.b, C(O)—NR.sup.aR.sup.b, N[C(O)R.sup.a][C(O)R.sup.b], SR.sup.a, Si(R.sup.Sia)(R.sup.Sib)(R.sup.Sic), —O—Si(R.sup.Sia)(R.sup.Sib)(R.sup.Sic), halogen, CN, and NO.sub.2; and at least two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.1-100-alkyl, C.sub.2-100-alkenyl and C.sub.2-100-alkynyl can be replaced by O or S, C.sub.5-12-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of C.sub.1-60-alkyl, C.sub.2-60-alkenyl, C.sub.2-60-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.a, OC(O)—R.sup.a, C(O)—OR.sup.a, C(O)—R.sup.a, NR.sup.aR.sup.b, NR.sup.a—C(O)R.sup.b, C(O)—NR.sup.aR.sup.b, N[C(O)R.sup.a][C(O)R.sup.b], SR.sup.a, Si(R.sup.Sia)(R.sup.Sib)(R.sup.Sic), —O—Si(R.sup.Sia)(R.sup.Sib)(R.sup.Sic), halogen, CN, and NO.sub.2; and one or two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.5-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR.sup.a or NR.sup.a—CO, C.sub.6-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of C.sub.1-60-alkyl, C.sub.2-60-alkenyl, C.sub.2-60-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.a, OC(O)—R.sup.a, C(O)—OR.sup.a, C(O)—R.sup.a, NR.sup.aR.sup.b, NR.sup.a—C(O)R.sup.b, C(O)—NR.sup.aR.sup.b, N[C(O)R.sup.a][C(O)R.sup.b], SR.sup.a, Si(R.sup.Sia)(R.sup.Sib)(R.sup.Sic), —O—Si(R.sup.Sia)(R.sup.Sib)(R.sup.Sic) halogen, CN, and NO.sub.2, wherein R.sup.a and R.sup.b are independently selected from the group consisting of H, C.sub.1-60-alkyl, C.sub.2-60-alkenyl, C.sub.2-60-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl and 5 to 14 membered heteroaryl, R.sup.Sia, R.sup.Sib and R.sup.Sic are independently selected from the group consisting of H, C.sub.1-60-alkyl, C.sub.2-60-alkenyl, C.sub.2-60-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, O—C.sub.1-60-alkyl, O—C.sub.2-60-alkenyl, O—C.sub.2-60-alkynyl, O—C.sub.5-8-cycloalkyl, O—C.sub.6-14-aryl, O-5 to 14 membered heteroaryl, —[O—SiR.sup.SidR.sup.Sie].sub.o—R.sup.Sif, NR.sup.5R.sup.6, halogen and O—C(O)—R.sup.5, wherein o is an integer from 1 to 50, R.sup.Sid, R.sup.Sie, R.sup.Sif are independently selected from the group consisting of H, C.sub.1-60-alkyl, C.sub.2-60-alkenyl, C.sub.2-60-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, O—C.sub.1-60-alkyl, O—C.sub.2-60-alkenyl, O—C.sub.2-60-alkynyl, O—C.sub.5-8-cycloalkyl, O—C.sub.6-14-aryl, O-5 to 14 membered heteroaryl, —[O—SiR.sup.SigR.sup.Sih].sub.p—R.sup.Sii, NR.sup.50R.sup.60, halogen and O—C(O)—R.sup.50; wherein p is an integer from 1 to 50, R.sup.Sig R.sup.Sih, R.sup.Sii are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, O—C.sub.1-30-alkyl, O—C.sub.2-30-alkenyl, O—C.sub.2-30-alkynyl, O—C.sub.5-6-cycloalkyl, O—C.sub.6-10-aryl, O-5 to 10 membered heteroaryl, O—Si(CH.sub.3).sub.3, NR.sup.500R.sup.600, halogen and O—C(O)—R.sup.50, R.sup.5, R.sup.6, R.sup.50, R.sup.60, R.sup.500 and R.sup.600 are independently selected from the group consisting of H, C.sub.1-60-alkyl, C.sub.2-60-alkenyl, C.sub.2-60-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, and 5 to 14 membered heteroaryl, C.sub.1-60-alkyl, C.sub.2-60-alkenyl and C.sub.2-60-alkynyl can be substituted with one to twenty substituents selected from the group consisting of C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, OR.sup.c, OC(O)—R.sup.c, C(O)—OR.sup.c, C(O)—R.sup.c, NR.sup.cR.sup.d, NR.sup.c—C(O)R.sup.d, C(O)—NR.sup.cR.sup.d, N[C(O)R.sup.c][C(O)R.sup.d], SR.sup.c, Si(R.sup.Sij)(R.sup.Sik)(R.sup.Sil), —O—Si(R.sup.Sij)(R.sup.Sik)(R.sup.Sil), halogen, CN, and NO.sub.2; and at least two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.1-60-alkyl, C.sub.2-60-alkenyl and C.sub.2-60-alkynyl can be replaced by O or S, C.sub.5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, OR.sup.c, OC(O)—R.sup.c, C(O)—OR.sup.c, C(O)—R.sup.c, NR.sup.cR.sup.d, NR.sup.c—C(O)R.sup.d, C(O)—NR.sup.cR.sup.d, N[C(O)R.sup.c][C(O)R.sup.d], SR.sup.c, Si(R.sup.Sij)(R.sup.Sik)(R.sup.Sil), —O—Si(R.sup.Sij)(R.sup.Sik)(R.sup.Sil), halogen, CN, and NO.sub.2; and one or two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.5-8-cycloalkyl can be replaced by O, S, OC(O), CO, NR.sup.c or NR.sup.c—CO, C.sub.6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, OR.sup.c, OC(O)—R.sup.c, C(O)—OR.sup.c, C(O)—R.sup.c, NR.sup.cR.sup.d, NR.sup.c—C(O)R.sup.d, C(O)—NR.sup.cR.sup.d, N [C(O)R.sup.c][C(O)R.sup.d], SR.sup.c, Si(R.sup.Sij)(R.sup.Sik)(R.sup.Sil), —O—Si(R.sup.Sij)(R.sup.Sik)(R.sup.Sil), halogen, CN and NO.sub.2; wherein R.sup.c and R.sup.d are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl, R.sup.Sij, R.sup.Sik and R.sup.Sil are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, O—C.sub.1-30-alkyl, O—C.sub.2-30-alkenyl, O—C.sub.2-30-alkynyl, O—C.sub.5-6-cycloalkyl, O—C.sub.6-10-aryl, O-5 to 10 membered heteroaryl, —[O—SiR.sup.SimR.sup.Sin].sub.q—R.sup.Sio, NR.sup.7R.sup.8, halogen, and O—C(O)—R.sup.7, wherein q is an integer from 1 to 50, R.sup.Sim, R.sup.Sin, R.sup.Sio are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, O—C.sub.1-30-alkyl, O—C.sub.2-30-alkenyl, O—C.sub.2-30-alkynyl, O—C.sub.5-6-cycloalkyl, O—C.sub.6-10-aryl, O-5 to 10 membered heteroaryl, —[O—SiR.sup.SipR.sup.Siq].sub.r—R.sup.Sir, NR.sup.70R.sup.80, halogen, and O—C(O)—R.sup.70; wherein r is an integer from 1 to 50, R.sup.Sip, R.sup.Siq, R.sup.Sir are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, O—C.sub.1-30-alkyl, O—C.sub.2-30-alkenyl, O—C.sub.2-30-alkynyl, O—C.sub.5-6-cycloalkyl, O—C.sub.6-10-aryl, O-5 to 10 membered heteroaryl, O—Si(CH.sub.3).sub.3, NR.sup.700R.sup.800, halogen and O—C(O)—R.sup.700, R.sup.7, R.sup.8, R.sup.70, R.sup.80, R.sup.700 and R.sup.800 are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, and 5 to 10 membered heteroaryl, C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be substituted with one to ten substituents selected from the group consisting of halogen, CN and NO.sub.2, L.sup.1 and are L.sup.2 are independently from each other and at each occurrence selected from the group consisting of C.sub.6-18-arylene, 5 to 20 membered heteroarylene, ##STR00105## wherein C.sub.6-18-arylene and 5 to 20 membered heteroarylene can be substituted with one to six substituents R.sup.3 at each occurrence selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl and 5 to 20 membered heteroaryl, OR.sup.31 OC(O)—R.sup.31, C(O)—OR.sup.31, C(O)—R.sup.31, NR.sup.31R.sup.32, NR.sup.31—C(O)R.sup.32, C(O)—NR.sup.31R.sup.32, N[C(O)R.sup.31][C(O)R.sup.32], SR.sup.31, halogen, CN, SiR.sup.SivR.sup.SiwR.sup.Six and OH, and wherein ##STR00106## can be substituted with one or two substituents R.sup.4 at each occurrence selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl and 5 to 20 membered heteroaryl, C(O)—R.sup.41, C(O)—NR.sup.41R.sup.42, C(O)—OR.sup.41 and CN, wherein R.sup.31, R.sup.32, R.sup.41 und R.sup.42 are independently from each other and at each occurrence selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl and 5 to 20 membered heteroaryl, and wherein C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.i, OC(O)—R.sup.j, C(O)—OR.sup.i, C(O)—R.sup.i, NR.sup.iR.sup.j, NR.sup.i—C(O)R.sup.j, C(O)—NR.sup.iR.sup.j, N[C(O)R.sup.i][C(O)R.sup.j], SR.sup.i, halogen, CN, SiR.sup.SivR.sup.SiwR.sup.Six and NO.sub.2; and at least two CH.sub.2-groups, but not adjacent CH.sub.2-groups of C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be replaced by O or S, C.sub.5-12-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.i, OC(O)—R.sup.j, C(O)—OR.sup.i, C(O)—R.sup.i, NR.sup.iR.sup.j, NR.sup.i—C(O)R.sup.j, C(O)—NR.sup.iR.sup.j, N[C(O)R.sup.i][C(O)R.sup.j], SR.sup.i, halogen, CN, SiR.sup.SivR.sup.SiwR.sup.Six and NO.sub.2; and one or two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.5-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR.sup.i or NR.sup.i—CO, C.sub.6-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.i, OC(O)—R.sup.j, C(O)—OR.sup.i, C(O)—R.sup.i, NR.sup.iR.sup.j, NR.sup.i—C(O)R.sup.j, C(O)—NR.sup.iR.sup.j, N[C(O)R.sup.i][C(O)R.sup.j], SR.sup.i, halogen, CN, SiR.sup.SivR.sup.SiwR.sup.Six and NO.sub.2, wherein R.sup.Siv, R.sup.Siw, R.sup.Six are independently from each other selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-6-cycloalkyl, phenyl and O—Si(CH.sub.3).sub.3, R.sup.i and R.sup.j are independently selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, and 5 to 14 membered heteroaryl, wherein C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl can be substituted with one to five substituents selected from the group consisting of C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.k, OC(O)—R.sup.l, C(O)—OR.sup.k, C(O)—R.sup.k, NR.sup.kR.sup.l, NR.sup.k—C(O)R.sup.l, C(O)—NR.sup.kR.sup.l, N[C(O)R.sup.k][C(O)R.sup.l], SR.sup.k, halogen, CN, and NO.sub.2; C.sub.5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.k, OC(O)—R.sup.l, C(O)—OR.sup.k, C(O)—R.sup.k, NR.sup.kR.sup.l, NR.sup.k—C(O)R.sup.l, C(O)—NR.sup.kR.sup.l, N[C(O)R.sup.k][C(O)R.sup.l], SR.sup.k, halogen, CN, and NO.sub.2; C.sub.6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.k, OC(O)—R.sup.l, C(O)—OR.sup.k, C(O)—R.sup.k, NR.sup.kR.sup.l, NR.sup.k—C(O)R.sup.l, C(O)—NR.sup.kR.sup.l, N[C(O)R.sup.k][C(O)R.sup.l], SR.sup.k, halogen, CN, and NO.sub.2; wherein R.sup.k and R.sup.l are independently selected from the group consisting of H, C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl, wherein C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO.sub.2, L.sup.3 and are L.sup.4 are independently from each other and at each occurrence selected from the group consisting of C.sub.6-18-arylene and 5 to 20 membered heteroarylene wherein C.sub.6-18-arylene and 5 to 20 membered heteroarylene can be substituted with one to six substituents R.sup.9 at each occurrence selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl and 5 to 20 membered heteroaryl, OR.sup.91, OC(O)—R.sup.91, C(O)—OR.sup.91, C(O)—R.sup.91, NR.sup.91R.sup.92, NR.sup.91—C(O)R.sup.92, C(O)—NR.sup.91R.sup.92, N[C(O)R.sup.91][C(O)R.sup.92], SR.sup.91, halogen, CN, SiR.sup.SiyR.sup.SizR.sup.Siaa and OH, and wherein R.sup.91 and R.sup.92 are independently from each other and at each occurrence selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl and 5 to 20 membered heteroaryl, and wherein C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.m, OC(O)—R.sup.m, C(O)—OR.sup.m, C(O)—R.sup.m, NR.sup.mR.sup.n, NR.sup.m—C(O)R.sup.n, C(O)—NR.sup.mR.sup.n, N[C(O)R.sup.n][C(O)R.sup.m], SR.sup.n, halogen, CN, SiR.sup.SiyR.sup.SizR.sup.Siaa and NO.sub.2; and at least two CH.sub.2-groups, but not adjacent CH.sub.2-groups of C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be replaced by O or S, C.sub.5-12-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.m, OC(O)—R.sup.m, C(O)—OR.sup.m, C(O)—R.sup.m, NR.sup.mR.sup.n, NR.sup.m—C(O)R.sup.n, C(O)—NR.sup.mR.sup.n, N[C(O)R.sup.m][C(O)R.sup.n], SR.sup.m, halogen, CN, SiR.sup.SiyR.sup.SizR.sup.Siaa and NO.sub.2; and one or two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.5-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR.sup.m or NR.sup.m—CO, C.sub.6-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.m, OC(O)—R.sup.m, C(O)—OR.sup.m, C(O)—R.sup.m, NR.sup.mR.sup.n, NR.sup.m—C(O)R.sup.n, C(O)—NR.sup.mR.sup.n, N[C(O)R.sup.m][C(O)R.sup.n], SR.sup.m, halogen, CN, SiR.sup.SiyR.sup.SizR.sup.Siaa and NO.sub.2, R.sup.Siy, R.sup.Siz, R.sup.Siaa are independently from each other selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-6-cycloalkyl, phenyl and O—Si(CH.sub.3).sub.3, wherein R.sup.m and R.sup.n are independently selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, and 5 to 14 membered heteroaryl, C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl can be substituted with one to five substituents selected from the group consisting of C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.o, OC(O)—R.sup.o, C(O)—OR.sup.o, C(O)—R.sup.o, NR.sup.oR.sup.p, NR.sup.o—C(O)R.sup.p, C(O)—NR.sup.oR.sup.p, N[C(O)R.sup.o][C(O)R.sup.p], SR.sup.o, halogen, CN, and NO.sub.2; C.sub.5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.o, OC(O)—R.sup.o, C(O)—OR.sup.o, C(O)—R.sup.o, NR.sup.oR.sup.p, NR.sup.o—C(O)R.sup.p, C(O)—NR.sup.oR.sup.p, N[C(O)R.sup.o][C(O)R.sup.p], SR.sup.o, halogen, CN, and NO.sub.2; C.sub.6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.o, OC(O)—R.sup.o, C(O)—OR.sup.o, C(O)—R.sup.o, NR.sup.oR.sup.p, NR.sup.o—C(O)R.sup.p, C(O)—NR.sup.oR.sup.p, N[C(O)R.sup.o][C(O)R.sup.p], SR.sup.o, halogen, CN, and NO.sub.2; wherein R.sup.o and R.sup.p are independently selected from the group consisting of H, C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl, wherein C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO.sub.2, A is selected from the group consisting of ##STR00107## and B is selected from the group consisting of ##STR00108## wherein X is at each occurrence O, S or NR.sup.1, A1, A2, A3, A4, A5, A6, A7, B1, B2, B3, B4, B5, B6 or B7 can be substituted with one to three substituents R.sup.2, R.sup.2 is at each occurrence selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl, 5 to 20 membered heteroaryl, OR.sup.21, OC(O)—R.sup.21, C(O)—OR.sup.21, C(O)—R.sup.21, NR.sup.21R.sup.22, NR.sup.21—C(O)R.sup.22, C(O)—NR.sup.21R.sup.22, N[C(O)R.sup.21][C(O)R.sup.22], SR.sup.21, halogen, CN, SiR.sup.SisR.sup.SitR.sup.Siu and OH, wherein R.sup.21 and R.sup.22 and are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl and 5 to 20 membered heteroaryl, and C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.e, OC(O)—R.sup.e, C(O)—OR.sup.e, C(O)—R.sup.e, NR.sup.eR.sup.f, NR.sup.e—C(O)R.sup.f, C(O)—NR.sup.eR.sup.f, N[C(O)R.sup.e][C(O)R.sup.f], SR.sup.e, halogen, CN, SiR.sup.SisR.sup.SitR.sup.Siu and NO.sub.2; and at least two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be replaced by O or S, C.sub.5-12-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.e, OC(O)—R.sup.e, C(O)—OR.sup.e, C(O)—R.sup.e, NR.sup.eR.sup.f, NR.sup.e—C(O)R.sup.f, C(O)—NR.sup.eR.sup.f, N[C(O)R.sup.e][C(O)R.sup.f], SR.sup.e, halogen, CN, SiR.sup.SisR.sup.SitR.sup.Siu and NO.sub.2; and one or two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.5-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR.sup.e or NR.sup.e—CO, C.sub.6-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.e, OC(O)—R.sup.e, C(O)—OR.sup.e, C(O)—R.sup.e, NR.sup.eR.sup.f, NR.sup.e—C(O)R.sup.f, C(O)—NR.sup.eR.sup.f, N[C(O)R.sup.e][C(O)R.sup.f], SR.sup.e, halogen, CN, SiR.sup.SisR.sup.SitR.sup.Siu and NO.sub.2, R.sup.Sis, R.sup.Sit and R.sup.Siu are independently from each other selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-6-cycloalkyl, phenyl and O—Si(CH.sub.3).sub.3, wherein R.sup.e and R.sup.f are independently selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, and 5 to 14 membered heteroaryl, C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl can be substituted with one to five substituents selected from the group consisting of C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.g, OC(O)—R.sup.g, C(O)—OR.sup.g, C(O)—R.sup.g, NR.sup.gR.sup.h, NR.sup.g—C(O)R.sup.h, C(O)—NR.sup.gR.sup.h, N[C(O)R.sup.g][C(O)R.sup.h], SR.sup.g, halogen, CN, and NO.sub.2; C.sub.5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.g, OC(O)—R.sup.g, C(O)—OR.sup.g, C(O)—R.sup.g, NR.sup.gR.sup.h, NR.sup.g—C(O)R.sup.h, C(O)—NR.sup.gR.sup.h, N[C(O)R.sup.g][C(O)R.sup.h], SR.sup.g, halogen, CN, and NO.sub.2; C.sub.6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.g, OC(O)—R.sup.g, C(O)—OR.sup.g, C(O)—R.sup.g, NR.sup.gR.sup.h, NR.sup.g—C(O)R.sup.h, C(O)—NR.sup.gR.sup.h, N[C(O)R.sup.g][C(O)R.sup.h], SR.sup.g, halogen, CN, and NO.sub.2; wherein R.sup.g and R.sup.h are independently selected from the group consisting of H, C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl, wherein C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO.sub.2.

4: The process of claim 3, wherein R.sup.1 is at each occurrence selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-100-alkenyl and C.sub.2-100-alkynyl, wherein C.sub.1-100-alkyl, C.sub.2-100-alkenyl and C.sub.2-100-alkynyl can be substituted with one to forty substituents independently selected from the group consisting of C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.a, OC(O)—R.sup.a, C(O)—OR.sup.a, C(O)—R.sup.a, NR.sup.a—C(O)R.sup.b, C(O)—NR.sup.aR.sup.b, SR.sup.a, Si(R.sup.Sia)(R.sup.Sib)(R.sup.Sic), —O—Si(R.sup.Sia)(R.sup.Sib)(R.sup.Sic), halogen, and CN; and at least two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.1-100-alkyl, C.sub.2-100-alkenyl and C.sub.2-100-alkynyl can be replaced by O or S, wherein R.sup.a and R.sup.b are independently selected from the group consisting of H, C.sub.1-60-alkyl, C.sub.2-60-alkenyl, C.sub.2-60-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl and 5 to 14 membered heteroaryl, R.sup.Sia, R.sup.Sib and R.sup.Sic are independently selected from the group consisting of H, C.sub.1-60-alkyl, C.sub.2-60-alkenyl, C.sub.2-60-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, —[O—SiR.sup.SidR.sup.Sie].sub.o—R.sup.Sif, wherein o is an integer from 1 to 50, R.sup.Sid, R.sup.Sie and R.sup.Sif are independently selected from the group consisting of H, C.sub.1-60-alkyl, C.sub.2-60-alkenyl, C.sub.2-60-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, —[O—SiR.sup.SigR.sup.Sih].sub.p—R.sup.Sii, wherein p is an integer from 1 to 50, R.sup.Sig R.sup.Sih, R.sup.Sii are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, O—Si(CH.sub.3).sub.3, R.sup.5, R.sup.6, R.sup.50, R.sup.60, R.sup.500 and R.sup.600 are independently selected from the group consisting of H, C.sub.1-60-alkyl, C.sub.2-60-alkenyl, C.sub.2-60-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, and 5 to 14 membered heteroaryl, C.sub.1-60-alkyl, C.sub.2-60-alkenyl and C.sub.2-60-alkynyl can be substituted with one to twenty substituents selected from the group consisting of C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, OR.sup.c, OC(O)—R.sup.c, C(O)—OR.sup.c, C(O)—R.sup.c, NR.sup.c—C(O)R.sup.d, C(O)—NR.sup.cR.sup.d, SR.sup.c, Si(R.sup.Sij)(R.sup.Sik)(R.sup.Sil), —O—Si(R.sup.Sij)(R.sup.Sik)(R.sup.Sil), halogen, and CN; and at least two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.1-60-alkyl, C.sub.2-60-alkenyl and C.sub.2-60-alkynyl can be replaced by O or S, C.sub.5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, OR.sup.c, OC(O)—R.sup.c, C(O)—OR.sup.c, C(O)—R.sup.c, NR.sup.c—C(O)R.sup.d, C(O)—NR.sup.cR.sup.d, SR.sup.C, Si(R.sup.Sij)(R.sup.Sik)(R.sup.Sil), —O—Si(R.sup.Sij)(R.sup.Sik)(R.sup.Sil), halogen, and CN; and one or two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.5-8-cycloalkyl can be replaced by O, S, OC(O), CO, NR.sup.c or NR.sup.c—CO, C.sub.6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, OR.sup.c, OC(O)—R.sup.c, C(O)—OR.sup.c, C(O)—R.sup.c, NR.sup.c—C(O)R.sup.d, C(O)—NR.sup.oR.sup.d, SR.sup.c, Si(R.sup.Sij)(R.sup.Sik)(R.sup.Sil), —O—Si(R.sup.Sij)(R.sup.Sik)(R.sup.Sil), halogen, and CN; wherein R.sup.c and R.sup.d are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl, R.sup.Sij, R.sup.Sik and R.sup.Sil are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, —[O—SiR.sup.SimR.sup.Sin].sub.q—R.sup.Sio, wherein q is an integer from 1 to 50, R.sup.Sim, R.sup.Sin, R.sup.Sio are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, —[O—SiR.sup.SipR.sup.Siq].sub.r—R.sup.Sir, wherein r is an integer from 1 to 50, R.sup.Sip, R.sup.Siq, R.sup.Sir are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, O—Si(CH.sub.3).sub.3, R.sup.7, R.sup.8, R.sup.70, R.sup.80, R.sup.700 and R.sup.800 are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, and 5 to 10 membered heteroaryl, C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be substituted with one to ten substituents selected from the group consisting of halogen and CN.

5: The process of claim 3, wherein R.sup.1 is at each occurrence selected from the group consisting of C.sub.1-50-alkyl, C.sub.2-50-alkenyl and C.sub.2-50-alkynyl, wherein C.sub.1-50-alkyl, C.sub.2-50-alkenyl and C.sub.2-50-alkynyl can be substituted with one to twenty substituents independently selected from the group consisting of C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.a, SR.sup.a, Si(R.sup.Sia)(R.sup.Sib)(R.sup.Sic), —O—Si(R.sup.Sia)(R.sup.Sib)(R.sup.Sic), halogen, and CN; and at least two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.1-50-alkyl, C.sub.2-50-alkenyl and C.sub.2-50-alkynyl can be replaced by O or S, wherein R.sup.a and R.sup.b are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl and C.sub.6-10-aryl, R.sup.Sia, R.sup.Sib and R.sup.Sic are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, —[O—SiR.sup.SidR.sup.Sie].sub.o—R.sup.Sif, wherein o is an integer from 1 to 50, R.sup.Sid, R.sup.Sie, R.sup.Sif are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, —[O—SiR.sup.SigR.sup.Sih].sub.p—R.sup.Sii, wherein p is an integer from 1 to 50, R.sup.Sig R.sup.Sih, R.sup.Sii are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, O—Si(CH.sub.3).sub.3, R.sup.5, R.sup.6, R.sup.50, R.sup.60, R.sup.500 and R.sup.600 are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, and 5 to 10 membered heteroaryl, C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be substituted with one to ten substituents selected from the group consisting of halogen and CN.

6: The process of claim 3, wherein R.sup.1 is at each occurrence selected from the group consisting of C.sub.1-36-alkyl, C.sub.2-36-alkenyl and C.sub.2-36-alkynyl, wherein C.sub.1-36-alkyl, C.sub.2-36-alkenyl and C.sub.2-36-alkynyl can be substituted with one to twenty substituents independently selected from the group consisting of C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.a, SR.sup.a, Si(R.sup.Sia)(R.sup.Sib)(R.sup.Sic), —O—Si(R.sup.Sia)(R.sup.Sib)(R.sup.Sic), halogen, and CN; and at least two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.1-36-alkyl, C.sub.2-36-alkenyl and C.sub.2-36-alkynyl can be replaced by O or S, wherein R.sup.a and R.sup.b are independently selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-6-cycloalkyl and C.sub.6-10-aryl R.sup.Sia, R.sup.Sib and R.sup.Sic are independently selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, —[O—SiR.sup.SidR.sup.Sie].sub.o—R.sup.Sif wherein o is an integer from 1 to 50, R.sup.Sid, R.sup.Sie, R.sup.Sif are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, —[O—SiR.sup.SigR.sup.Sih].sub.p—R.sup.Sii, wherein p is an integer from 1 to 50, R.sup.Sig R.sup.Sih, R.sup.Sii are independently selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, O—Si(CH.sub.3).sub.3, R.sup.5, R.sup.6, R.sup.50, R.sup.60, R.sup.500 and R.sup.600 are independently selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, and 5 to 10 membered heteroaryl, C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl can be substituted with one to ten substituents selected from the group consisting of halogen and CN.

7: The process of claim 3, wherein L.sup.1 and L.sup.2 are independently from each other and at each occurrence selected from the group consisting of 5 to 20 membered heteroarylene, and ##STR00109## wherein 5 to 20 membered heteroarylene can be substituted with one to six substituents R.sup.3 at each occurrence selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl and 5 to 20 membered heteroaryl, OR.sup.31, OC(O)—R.sup.31, C(O)—OR.sup.31, C(O)—R.sup.31, NR.sup.31R.sup.32, NR.sup.31—C(O)R.sup.32, C(O)—NR.sup.31R.sup.32, SR.sup.31, halogen, CN, SiR.sup.SivR.sup.SiwR.sup.Six and OH, and wherein ##STR00110## can be substituted with one or two substituents R.sup.4 at each occurrence selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl and 5 to 20 membered heteroaryl, C(O)—R.sup.41, C(O)—NR.sup.41R.sup.42, C(O)—OR.sup.41 and CN, wherein R.sup.31, R.sup.32, R.sup.41 und R.sup.42 are independently from each other and at each occurrence selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl and 5 to 20 membered heteroaryl, and wherein C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.i, OC(O)—R.sup.i, C(O)—OR.sup.i, C(O)—R.sup.j, NR.sup.iR.sup.j, NR.sup.i—C(O)R.sup.j, C(O)—NR.sup.iR.sup.j, N[C(O)R.sup.i][C(O)R.sup.j], SR.sup.i, halogen, CN, SiR.sup.SivR.sup.SiwR.sup.Six and NO.sub.2; and at least two CH.sub.2-groups, but not adjacent CH.sub.2-groups of C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be replaced by O or S, C.sub.5-12-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.i, OC(O)—R.sup.i, C(O)—OR.sup.i, C(O)—R.sup.j, NR.sup.iR.sup.j, NR.sup.i—C(O)R.sup.j, C(O)—NR.sup.iR.sup.j, N[C(O)R.sup.i][C(O)R.sup.j], SR.sup.i, halogen, CN, SiR.sup.SivR.sup.SiwR.sup.Six and NO.sub.2; and one or two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.5-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR.sup.i or NR.sup.i—CO, C.sub.6-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.i, OC(O)—R.sup.j, C(O)—OR.sup.i, C(O)—R.sup.i, NR.sup.iR.sup.j, NR.sup.i—C(O)R.sup.j, C(O)—NR.sup.iR.sup.j, N[C(O)R.sup.i][C(O)R.sup.j], SR.sup.i, halogen, CN, SiR.sup.SivR.sup.SiwR.sup.Six and NO.sub.2, wherein R.sup.Siv, R.sup.Siw, R.sup.Six are independently from each other selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-6-cycloalkyl, phenyl and O—Si(CH.sub.3).sub.3, R.sup.i and R.sup.j are independently selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, and 5 to 14 membered heteroaryl, wherein C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl can be substituted with one to five substituents selected from the group consisting of C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.k, OC(O)—R.sup.l, C(O)—OR.sup.k, C(O)—R.sup.k, NR.sup.kR.sup.l, NR.sup.k—C(O)R.sup.l, C(O)—NR.sup.kR.sup.l, N[C(O)R.sup.k][C(O)R.sup.1], SR.sup.k, halogen, CN, and NO.sub.2; C.sub.5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.k, OC(O)—R.sup.l, C(O)—OR.sup.k, C(O)—R.sup.k, NR.sup.kR.sup.l, NR.sup.k—C(O)R.sup.l, C(O)—NR.sup.kR.sup.l, N[C(O)R.sup.k][C(O)R.sup.l], SR.sup.k, halogen, CN, and NO.sub.2; C.sub.6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.k, OC(O)—R.sup.l, C(O)—OR.sup.k, C(O)—R.sup.k, NR.sup.kR.sup.l, NR.sup.k—C(O)R.sup.l, C(O)—NR.sup.kR.sup.l, N[C(O)R.sup.k][C(O)R.sup.l], SR.sup.k, halogen, CN, and NO.sub.2; wherein R.sup.k and R.sup.l are independently selected from the group consisting of H, C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl, wherein C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO.sub.2, and L.sup.3 and are L.sup.4 are independently from each other and at each occurrence 5 to 20 membered heteroarylene wherein 5 to 20 membered heteroarylene can be substituted with one to six substituents R.sup.9 at each occurrence selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl and 5 to 20 membered heteroaryl, OR.sup.91, OC(O)—R.sup.91, C(O)—OR.sup.91, C(O)—R.sup.91, NR.sup.91R.sup.92, NR.sup.91—C(O)R.sup.92, C(O)—NR.sup.91R.sup.92, SR.sup.91, halogen, CN, SiR.sup.SiyR.sup.SizR.sup.Siaa and OH, and wherein R.sup.91 and R.sup.92 are independently from each other and at each occurrence selected from the group consisting of H, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl and 5 to 20 membered heteroaryl, and C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be substituted with one to ten substituents independently selected from the group consisting of C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.m, OC(O)—R.sup.m, C(O)—OR.sup.m, C(O)—R.sup.m, NR.sup.mR.sup.n, NR.sup.m—C(O)R.sup.n, C(O)—NR.sup.nR.sup.m, N[C(O)R.sup.n][C(O)R.sup.m], SR.sup.n, halogen, CN, SiR.sup.SiyR.sup.SizR.sup.Siaa and NO.sub.2; and at least two CH.sub.2-groups, but not adjacent CH.sub.2-groups of C.sub.1-30-alkyl, C.sub.2-30-alkenyl and C.sub.2-30-alkynyl can be replaced by O or S, C.sub.5-12-cycloalkyl can be substituted with one to six substituents independently selected from the group consisting of C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.m, OC(O)—R.sup.m, C(O)—OR.sup.m, C(O)—R.sup.m, NR.sup.mR.sup.n, NR.sup.m—C(O)R.sup.n, C(O)—NR.sup.mR.sup.n, N[C(O)R.sup.m][C(O)R.sup.n], SR.sup.m, halogen, CN, SiR.sup.SiyR.sup.SizR.sup.Siaa and NO.sub.2; and one or two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.5-12-cycloalkyl can be replaced by O, S, OC(O), CO, NR.sup.m or NR.sup.m—CO, C.sub.6-18-aryl and 5 to 20 membered heteroaryl can be substituted with one to six substituents independently selected from the group consisting of C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.m, OC(O)—R.sup.m, C(O)—OR.sup.m, C(O)—R.sup.m, NR.sup.mR.sup.n, NR.sup.m—C(O)R.sup.n, C(O)—NR.sup.mR.sup.n, N[C(O)R.sup.m][C(O)R.sup.n], SR.sup.m, halogen, CN, SiR.sup.SiyR.sup.SizR.sup.Siaa and NO.sub.2, R.sup.Siy, R.sup.Siz, R.sup.Siaa are independently from each other selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-6-cycloalkyl, phenyl and O—Si(CH.sub.3).sub.3, wherein R.sup.m and R.sup.n are independently selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, and 5 to 14 membered heteroaryl, C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl can be substituted with one to five substituents selected from the group consisting of C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.o, OC(O)—R.sup.o, C(O)—OR.sup.o, C(O)—R.sup.o, NR.sup.oR.sup.p, NR.sup.o—C(O)R.sup.p, C(O)—NR.sup.oR.sup.p, N[C(O)R.sup.o][C(O)R.sup.p], SR.sup.o, halogen, CN, and NO.sub.2; C.sub.5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.o, OC(O)—R.sup.o, C(O)—OR.sup.o, C(O)—R.sup.o, NR.sup.oR.sup.p, NR.sup.o—C(O)R.sup.p, C(O)—NR.sup.oR.sup.p, N[C(O)R.sup.o][C(O)R.sup.p], SR.sup.o, halogen, CN, and NO.sub.2; C.sub.6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.o, OC(O)—R.sup.o, C(O)—OR.sup.o, C(O)—R.sup.o, NR.sup.oR.sup.p, NR.sup.o—C(O)R.sup.p, C(O)—NR.sup.oR.sup.p, N[C(O)R.sup.o][C(O)R.sup.p], SR.sup.o, halogen, CN, and NO.sub.2; wherein R.sup.o and R.sup.p are independently selected from the group consisting of H, C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl, wherein C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO.sub.2.

8: The process of claim 3, wherein L.sup.1 and L.sup.2 are independently from each other and at each occurrence selected from the group consisting of 5 to 20 membered heteroarylene, and ##STR00111## wherein 5 to 20 membered heteroarylene is selected from the group consisting of ##STR00112## wherein R.sup.104 and R.sup.105 are independently and at each occurrence selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, and 5 to 14 membered heteroaryl, or R.sup.104 and R.sup.105, if attached to the same atom, together with the atom, to which they are attached, form a 5 to 12 membered ring system, wherein C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl can be substituted with one to five substituents selected from the group consisting of C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.u, OC(O)—R.sup.u, C(O)—OR.sup.u, C(O)—R.sup.u, NR.sup.uR.sup.v, NR.sup.u—C(O)R.sup.v, C(O)—NR.sup.uR.sup.v, N[C(O)R.sup.u][C(O)R.sup.v], SR.sup.u, halogen, CN, and NO.sub.2; C.sub.5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.21l-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.u, OC(O)—R.sup.u, C(O)—OR.sup.u, C(O)—R.sup.u, NR.sup.uR.sup.v, NR.sup.u—C(O)R.sup.v, C(O)—NR.sup.uR.sup.v, N[C(O)R.sup.u][C(O)R.sup.v], SR.sup.u, halogen, CN, and NO.sub.2; C.sub.6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.u, OC(O)—R.sup.u, C(O)—OR.sup.u, C(O)—R.sup.u, NR.sup.uR.sup.v, NR.sup.u—C(O)R.sup.v, C(O)—NR.sup.uR.sup.v, N[C(O)R.sup.u][C(O)R.sup.v], SR.sup.u, halogen, CN, and NO.sub.2; 5 to 12 membered ring system can be substituted with one to five substituents selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.u, OC(O)—R.sup.u, C(O)—OR.sup.u, C(O)—R.sup.u, NR.sup.uR.sup.v, NR.sup.u—C(O)R.sup.o, C(O)—NR.sup.uR.sup.v, N[C(O)R.sup.u][C(O)R.sup.v], SR.sup.u, halogen, CN, and NO.sub.2; wherein R.sup.u and R.sup.v are independently selected from the group consisting of H, C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl, wherein C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO.sub.2, wherein 5 to 20 membered heteroarylene can be substituted with one to four substituents R.sup.3 at each occurrence selected from the group consisting of C.sub.1-30-alkyl and halogen, and wherein ##STR00113## can be substituted with one or two substituents R.sup.4 at each occurrence selected from the group consisting of C.sub.1-30-alkyl, C(O)—R.sup.41, C(O)—OR.sup.41 and CN, wherein R.sup.41 is at each occurrence C.sub.1-30-alkyl, and L.sup.3 and are L.sup.4 are independently from each other and at each occurrence 5 to 20 membered heteroarylene, wherein 5 to 20 membered heteroarylene is selected from the group consisting of ##STR00114## wherein R.sup.104 and R.sup.105 are independently and at each occurrence selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, and 5 to 14 membered heteroaryl, or R.sup.104 and R.sup.105, if attached to the same atom, together with the atom, to which they are attached, form a 5 to 12 membered ring system, wherein C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl can be substituted with one to five substituents selected from the group consisting of C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.u, OC(O)—R.sup.u, C(O)—OR.sup.u, C(O)—R.sup.u, NR.sup.uR.sup.v, NR.sup.u—C(O)R.sup.v, C(O)—NR.sup.uR.sup.v, N[C(O)R.sup.u][C(O)R.sup.v], SR.sup.u, halogen, CN, and NO.sub.2; C.sub.5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.u, OC(O)—R.sup.u, C(O)—OR.sup.u, C(O)—R.sup.u, NR.sup.uR.sup.v, NR.sup.u—C(O)R.sup.v, C(O)—NR.sup.uR.sup.v, N[C(O)R.sup.u][C(O)R.sup.v], SR.sup.u, halogen, CN, and NO.sub.2; C.sub.6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.u, OC(O)—R.sup.u, C(O)—OR.sup.u, C(O)—R.sup.u, NR.sup.uR.sup.v, NR.sup.u—C(O)R.sup.v, C(O)—NR.sup.uR.sup.v, N[C(O)R.sup.u][C(O)R.sup.v], SR.sup.u, halogen, CN, and NO.sub.2; 5 to 12 membered ring system can be substituted with one to five substituents selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.u, OC(O)—R.sup.u, C(O)—OR.sup.u, C(O)—R.sup.u, NR.sup.uR.sup.v, NR.sup.u—C(O)R.sup.v, C(O)—NR.sup.uR.sup.v, N[C(O)R.sup.u][C(O)R.sup.v], SR.sup.u, halogen, CN, and NO.sub.2; wherein R.sup.u and R.sup.v are independently selected from the group consisting of H, C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl, wherein C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO.sub.2, wherein 5 to 20 membered heteroarylene can be substituted with one to three substituents R.sup.9 at each occurrence selected from the group consisting of C.sub.1-30-alkyl and halogen.

9: The process of claim 3, wherein L.sup.1 and L.sup.2 are independently from each other and at each occurrence selected from the group consisting of 5 to 20 membered heteroarylene, and ##STR00115## wherein 5 to 20 membered heteroarylene is selected from the group consisting of ##STR00116## wherein R.sup.104 and R.sup.105 are independently and at each occurrence selected from the group consisting of H and C.sub.1-20-alkyl, wherein 5 to 20 membered heteroarylene can be substituted with one to four substituents R.sup.3 at each occurrence selected from the group consisting of C.sub.1-30-alkyl and halogen, and wherein ##STR00117## is unsubstituted, and L.sup.3 and L.sup.4 are independently from each other and at each occurrence 5 to 20 membered heteroarylene, wherein 5 to 20 membered heteroarylene is selected from the group consisting of ##STR00118## wherein 5 to 20 membered heteroarylene can be substituted with one substituent R.sup.9 at each occurrence selected from the group consisting of C.sub.1-30-alkyl and halogen.

10: The process of claim 3, wherein A is selected from the group consisting of ##STR00119## wherein X is at each occurrence O, S or NR.sup.1, and A1, A2, A3 and A4 can be substituted with one to three substituents R.sup.2, B is selected from the group consisting of ##STR00120## wherein X is at each occurrence O, S or NR.sup.1, and B1, B2, B3 and B4 can be substituted with one to three substituents R.sup.2, and R.sup.2 is at each occurrence selected from the group consisting of C.sub.1-30-alkyl and halogen, wherein C.sub.1-30-alkyl can be substituted with one to ten substituents independently selected from the group consisting of C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, 5 to 14 membered heteroaryl, OR.sup.e, OC(O)—R.sup.e, C(O)—OR.sup.e, C(O)—R.sup.e, NR.sup.eR.sup.f, NR.sup.e—C(O)R.sup.f, C(O)—NR.sup.eR.sup.f, N[C(O)R.sup.e][C(O)R.sup.f], SR.sup.e, halogen, CN, SiR.sup.SisR.sup.SitR.sup.Siu and NO.sub.2; and at least two CH.sub.2-groups, but not adjacent CH.sub.2-groups, of C.sub.1-30-alkyl can be replaced by O or S, wherein R.sup.Sis, R.sup.Sit and R.sup.Siu are independently from each other selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-6-cycloalkyl, phenyl and O—Si(CH.sub.3).sub.3, R.sup.e and R.sup.f are independently selected from the group consisting of H, C.sub.1-20-alkyl, C.sub.2-20-alkenyl, C.sub.2-20-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl, and 5 to 14 membered heteroaryl, C.sub.1-20-alkyl, C.sub.2-20-alkenyl and C.sub.2-20-alkynyl can be substituted with one to five substituents selected from the group consisting of C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.g, OC(O)—R.sup.g, C(O)—OR.sup.g, C(O)—R.sup.g, NR.sup.gR.sup.h, NR.sup.g—C(O)R.sup.h, C(O)—NR.sup.gR.sup.h, N[C(O)R.sup.g][C(O)R.sup.h], SR.sup.g, halogen, CN, and NO.sub.2; C.sub.5-8-cycloalkyl can be substituted with one to five substituents selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.g, OC(O)—R.sup.g, C(O)—OR.sup.g, C(O)—R.sup.g, NR.sup.gR.sup.h, NR.sup.g—C(O)R.sup.h, C(O)—NR.sup.gR.sup.h, N[C(O)R.sup.g][C(O)R.sup.h], SR.sup.g, halogen, CN, and NO.sub.2; C.sub.6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one to five substituents independently selected from the group consisting of C.sub.1-10-alkyl, C.sub.2-10-alkenyl, C.sub.2-10-alkynyl, C.sub.5-6-cycloalkyl, C.sub.6-10-aryl, 5 to 10 membered heteroaryl, OR.sup.g, OC(O)—R.sup.g, C(O)—OR.sup.g, C(O)—R.sup.g, NR.sup.gR.sup.h, NR.sup.g—C(O)R.sup.h, C(O)—NR.sup.gR.sup.h, N[C(O)R.sup.g][C(O)R.sup.h], SR.sup.g, halogen, CN, and NO.sub.2; wherein R.sup.g and R.sup.h are independently selected from the group consisting of H, C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl, wherein C.sub.1-10-alkyl, C.sub.2-10-alkenyl and C.sub.2-10-alkynyl can be substituted with one to five substituents selected from the group consisting of halogen, CN and NO.sub.2.

11: The process of claim 3, wherein A is ##STR00121## wherein X is at each occurrence S or NR.sup.1, and A1 and A4 can be substituted with one to three substituents R.sup.2, B is ##STR00122## wherein X is at each occurrence S or NR.sup.1, and B1 and B4 can be substituted with one to three substituents R.sup.2, and R.sup.2 is at each occurrence selected from the group consisting of unsubstituted C.sub.1-30-alkyl and halogen.

12: The process of claim 3, wherein b and c are independently from each other 1, 2, 3 or 4, a and d are independently from each other 0, 1 or 2, and n and m are independently from each other 0, 1 or 2.

13: The process of claim 3, wherein b and c are independently from each other 1, 2 or 3, a and d are independently from each other 0 or 1, n is 0 or 1, and m is 0, 1 or 2.

14: A composition comprising semiconducting single-walled carbon nanotubes, a semiconducting polymer and solvent A, wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A comprises an aromatic or a heteroaromatic solvent.

15: A process for forming an electronic device, which process comprises forming a layer by applying a composition comprising semiconducting single-walled carbon nanotubes, the semiconducting polymer and solvent A, wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A comprises an aromatic or a heteroaromatic solvent, to a precursor of the electronic device.

16: An electronic device obtained by the process of claim 15.

17: The electronic device of claim 16, wherein the electronic device is an organic field-effect transistor (OFET).

18. (canceled)

19: A method of making a semiconducting layer, the method comprising: depositing a composition according to claim 14 to a substrate; and drying the composition.

Description

[0794] FIG. 1 shows the normalized UV-VIS spectra of compositions A-1′, A-2′, A-3′ and A-4′, all comprising semiconducting polymer removed semiconducting SWNTs, and the normalized UV-VIS spectra of SDBS-removed arc-discharged SWNTs in solid state.

[0795] FIG. 2 shows the normalized UV-VIS spectra of compositions A-3′, A-5′, A-6′ and A-7′, all comprising semiconducting polymer removed semiconducting SWNTs, in solid state.

[0796] FIG. 3 shows the Raman spectra of composition A-6 comprising semiconducting SWNTs and polymer Pc., of pristine arc-discharged SWNTs (tradename “P2 SWNT” from Carbon Solutions Inc, Riverside, Calif.; 90% purity for SWNTs) and of polymer Pc at 785 nm excitation and 100 to 300 cm.sup.−1 Raman shift.

[0797] FIG. 4 shows a chiral angle (θ) versus diameter (d) map of the composition A-6 comprising semiconducting SWNTs and polymer Pc.

[0798] FIG. 5 illustrates how to determine the absorption onset (λ onset) of the semiconducting polymer from the thin film UV-Vis-NIR spectra of the semiconducting polymer at 25° C.

[0799] FIG. 6 shows the normalized UV-VIS spectra of compositions A-8′, A-9′, A-10′, A-11′ and A-12′, all comprising semiconducting polymer removed semiconducting SWNTs, in solid state.

[0800] FIG. 7 shows the normalized UV-VIS spectra of compositions A-13′, A-14′, A-15′ and A-16′, all comprising semiconducting polymer removed semiconducting SWNTs, and the normalized UV-VIS spectra of SDBS-removed arc-discharged SWNTs in solid state.

EXAMPLES

Example 1

Preparation of Polymer Pc

[0801] ##STR00099##

[0802] 815 mg (2.423 mmol) of compound 2a, 1972 mg (2.181 mmol) of compound 3a, 179 mg (0.242 mmol) of compound 3b, 78.30 mg of tris(dibenzylideneacetone)dipalladium(0) (Pd.sub.2(dba).sub.3) and 48.15 mg of tri-tert-butylphosphonium tetrafluoroborate ((tert-Bu).sub.3P×HBF.sub.4) are placed together in 50 ml of tetrahydrofuran under Argon. The reaction mixture is heated to reflux, and then 1600 mg potassium phosphate in 5 ml of degassed water is added. The reaction mixture is refluxed overnight. Then the reaction mixture is poured on water and the precipitate is filtered and washed with water and methanol. The precipitate is then Soxhlet fractionated with heptane, tetrahydrofuran, toluene, chloroform and chlorobenzene. To remove catalyst residues, the selected fraction is evaporated and the residue is dissolved in 150 ml of chlorobenzene. Then 50 ml of a 1% NaCN aqueous solution is added and the mixture is heated and stirred overnight at reflux. The phases are separated and the organic phase is washed 3 times with 10 ml of deionized water for 3 hours at reflux. Polymer Pc is then precipitated from the organic phase by addition of methanol. The precipitated Pc is filtered, washed with methanol and dried. Polymer Pc is a random polymer. GPC (1,2,4-trichlorobenzene, 150° C., polystyrene standard): M.sub.n=47.0 kDa, M.sub.w=129.6 kDa, PDI=2.76. UV-VIS-absorption spectrum: λ.sub.max: 840 nm (film) and 832 nm (10.sup.−5 M solution in toluene). The film was prepared by spin-coating a solution of 5 mg Polymer Pc in 25 mL toluene on a glass substrate. Elemental analysis: C, 71.60%, H, 8.73%, N, 3.59%, S, 11.40%. Band gap Eg.sup.opt: 1.35 eV.

Example 2

Preparation of Polymer Pa

[0803] Polymer Pa is prepared in analogy to Polymer Pc in example 1, except that 733 mg (2.181 mmol) of compound 2a and 1972 mg (2.181 mmol) of compound 3a, and no compound 3b are used. Polymer Pa is a random polymer. GPC (1,2,4-trichlorobenzene, 150° C., polystyrene standard): M.sub.n=36.0 kDa, M.sub.w=36.0 kDa, PDI=1.82. UV-VIS-absorption spectrum: λ.sub.max: 840 nm (film) and 840 nm (10.sup.−5 M solution in toluene). The thin film was prepared by spin-coating a solution of 5 mg Polymer Pa in 25 mL toluene on a glass substrate. Elemental analysis: C, 72.50%, H, 8.95%, N, 3.66%, S, 11.20%. Band gap Eg.sup.opt: 1.36 eV.

Example 3

Preparation of Polymer Pb

[0804] Polymer Pb is prepared in analogy to Polymer Pc in example 1, except that 722 mg (2.296 mmol) of compound 2a and 1972 mg (2.181 mmol) of compound 3a, and 85 mg (0.115 mmol) of compound 3b are used. Polymer Pb is a random polymer. GPC (1,2,4-trichlorobenzene, 150° C., polystyrene standard): M.sub.n=43.7 kDa, M.sub.w=150.7 kDa, PDI=3.45. UV-VIS-absorption spectrum: λ.sub.max: 836 nm (film) and 828 nm (10.sup.−5 M solution in toluene). The thin film was prepared by spin-coating a solution of 5 mg Polymer Pb in 25 mL toluene on a glass substrate. Elemental analysis: C, 72.85%, H, 8.69%, N, 3.61%, S, 11.40%. Band gap Eg.sup.opt: 1.35 eV.

Example 4

Preparation of Polymer Pd

[0805] Polymer Pd is prepared in analogy to Polymer Pc in example 1, except that 916 mg (2.726 mmol) of compound 2a and 1972 mg (2.181 mmol) of compound 3a, and 403 mg (0.545 mmol) of compound 3b are used. Polymer Pd is a random polymer. GPC (1,2,4-trichlorobenzene, 150° C., polystyrene standard): M.sub.n=30.7 kDa, M.sub.w=80.2 kDa, PDI=2.61. UV-VIS-absorption spectrum: λ.sub.max: 844 nm (film) and 848 nm (10.sup.−5 M solution in toluene). The thin film was prepared by spin-coating a solution of 5 mg Polymer Pd in 25 mL toluene on a glass substrate. Elemental analysis: C, 72.45%, H, 8.51%, N, 3.79%, S, 11.60%. Band gap Eg.sup.opt: 1.35 eV.

Example 5

Preparation of Polymer Pe

[0806] ##STR00100##

[0807] Polymer Pe is prepared in analogy to Polymer Pa in example 2, except that 739 mg (1.768 mmol) of compound 2b and 1995 mg (1.768 mmol) of compound 3c are used. GPC (1,2,4-trichlorobenzene, 150° C., polystyrene standard): M.sub.n=63.8 kDa, M.sub.w=64.9 kDa, PDI=1.76.

Example 6

Preparation of Compositions Comprising Semiconducting SWNTs and Polymer Pa, Pb, Pc, Respectively, Pd

[0808] 5 mg of polymer Pa, Pb, Pc, respectively, Pd and 3 mg of arc-discharged SWNTs (tradename “P2 SWNT” from Carbon Solutions Inc, Riverside, Calif.; 90% purity for SWNTs, diameters in the range of about 1.1-1.8 nm, amount of metallic SWNT about 30%) were mixed in 25 mL of toluene and ultrasonicated for 30 min at an amplitude level of 70% (Cole Parmer ultrasonicator 750 W). The dispersion was then centrifuged at 17 000 rpm for 30 min at 16° C. (Sorvall RCSC-plus). The supernatants were collected and represent composition A-1, A-2, A-3, respectively, A-4.

[0809] Composition A-1 comprises semiconducting SWNTs and polymer Pa.

[0810] Composition A-2 comprises semiconducting SWNTs and polymer Pb.

[0811] Composition A-3 comprises semiconducting SWNTs and polymer Pc.

[0812] Composition A-4 comprises semiconducting SWNTs and polymer Pd.

[0813] Compositions A-1, A-2, A-3 and A-4 were drop-casted on a glass substrate and annealed at 500° C. under Argon for 1 h in order to yield polymer-removed compositions A-1′, A-2′, A-3′ and A-4′.

[0814] Composition A-1′ comprises semiconducting SWNTs and is derived from composition A-1.

[0815] Composition A-2′ comprises semiconducting SWNTs and is derived from composition A-2.

[0816] Composition A-3′ comprises semiconducting SWNTs and is derived from composition A-3.

[0817] Composition A-4′ comprises semiconducting SWNTs and is derived from composition A-4.

[0818] For comparison, arc-discharged SWNTs (tradename “P2 SWNT” from Carbon Solutions Inc, Riverside, Calif.; 90% purity for SWNTs) dispersed in 1% sodium dodecylbenzenesulfonate (SDBS) aqueous solution was drop-casted on a glass substrate and annealed at 500° C. under Ar for 1 h in order to yield SDBS-removed arc-discharged SWNTs.

[0819] FIG. 1 shows the normalized UV-VIS spectra of compositions A-1′, A-2′, A-3′, A-4′ and SDBS-removed arc-discharged SWNTs in solid state.

[0820] Metallic SWNTs absorb in the range of 600 to 850 nm. Semiconducting SWNTs absorb in the range of 900 to 1330 nm. FIG. 1 clearly shows that the absorption of compositions A-1′, A-2′, A-3′, A-4′ in the range of 600 to 850 nm is decreased compared to the absorption of SDS-removed arc-discharged SWNTs in this wavelength range. Thus, the ratio of semiconducting SWNT/metallic SWNT is higher in A-1′, A-2′, A-3′, A-4′ compositions than in SDBS-removed arc-discharged SWNTs. Composition A-4′ shows the highest ratio of semiconducting SWNT/metallic SWNT.

Example 7

Preparation of Compositions Comprising Semiconducting SWNTs and Polymer Pc

[0821] 5 mg of polymer Pc and 3 mg, 5 mg, 7 mg, respectively, 10 mg of arc-discharged SWNTs (tradename “P2 SWNT” from Carbon Solutions Inc, Riverside, Calif.; 90% purity for SWNTs) were mixed in 25 mL of toluene and ultrasonicated for 30 min at an amplitude level of 70% (Cole Parmer ultrasonicator 750 W). The dispersion was then centrifuged at 17 000 rpm for 30 min at 16° C. (Sorvall RCSC-plus). The supernatants were collected and represent composition A-3, A-5, A-6 and A-7.

[0822] Composition A-3 comprises semiconducting SWNTs and polymer Pc, and is derived from the dispersion of 5 mg Pc and 3 mg arc-discharged SWNTs.

[0823] Composition A-5 comprises semiconducting SWNTs and polymer Pc, and is derived from the dispersion of 5 mg Pc and 5 mg arc-discharged SWNTs.

[0824] Composition A-6 comprises semiconducting SWNTs and polymer Pc, and is derived from the dispersion of 5 mg Pc and 7 mg arc-discharged SWNTs.

[0825] Composition A-7 comprises semiconducting SWNTs and polymer Pc, and is derived from the dispersion of 5 mg Pc and 10 mg arc-discharged SWNTs.

[0826] Compositions A-3, A-5, A-6 and A-7 were drop-casted on a glass substrate and annealed at 500° C. under Argon for 1 h in order to yield polymer-removed composition A-3′, A-5′, A-6′ and A-7′.

[0827] Composition A-3′ comprises semiconducting SWNTs and is derived from composition A-3.

[0828] Composition A-5′ comprises semiconducting SWNTs and is derived from composition A-5.

[0829] Composition A-6′ comprises semiconducting SWNTs and is derived from composition A-6.

[0830] Composition A-7′ comprises semiconducting SWNTs and is derived from composition A-7.

[0831] FIG. 2 shows the normalized UV-VIS spectra of compositions A-3′, A-5′, A-6′, A-7′ in solid state.

[0832] Metallic SWNTs absorb in the range of 600 to 850 nm. Semiconducting SWNTs absorb in the range of 900 to 1330 nm. FIG. 2 shows that that the absorption of compositions A-6′ in the range of 600 to 850 nm is more decreased than to the absorption of A-3′, A-5′ and A-7′ in this wavelength range. Thus, the dispersion of 5 mg of polymer Pc and 7 mg of arc-discharged SWNTs in 25 mL toluene yields the highest semiconducting SWNT/metallic SWNT ratio in the supernatant.

[0833] Raman spectra (Model: LabRam Aramis from Horiba Jobin Yvon) of composition A-6 (comprising semiconducting SWNTs and polymer Pc was carried out at 1.58 eV (785 nm) excitation at ×100 magnification and 1-μm spot size. The peak positions were calibrated with the Si line at 521 cm.sup.−1.

[0834] For comparison, Raman spectra of pristine arc-discharged SWNTs (tradename “P2 SWNT” from Carbon Solutions Inc, Riverside, Calif.; 90% purity for SWNTs) and of polymer Pc were also recorded.

[0835] FIG. 3 shows the Raman spectra of composition A-6, of pristine arc-discharged SWNTs (tradename “P2 SWNT” from Carbon Solutions Inc, Riverside, Calif.; 90% purity for SWNTs) and of polymer Pc at 785 nm excitation and 100 to 300 cm.sup.−1 Raman shift.

[0836] FIG. 3 shows that under 785 nm excitation, a strong peak at 162 cm.sup.−1 corresponding to radial breathing modes of metallic SWNTs was observed in pristine arc-discharged SWNTs, and that composition A-6 only shows a very, very weak peak at 162 cm.sup.−1. The polymer Pc does not show any peak at 162 cm.sup.−1. Thus, the ratio of semiconducting SWNT/metallic SWNT is higher in A-6 composition than in pristine arc-discharged SWNTs.

[0837] The Phospholuminescence excitation/emission (PLE) spectra on composition A-6 comprising semiconducting SWNTs and polymer Pc were taken on a home-built NIR-II spectroscopy setup with measured range of 1100-2100 nm. The excitation in the 700-1080 nm range was provided by a white-light source of an ozone-free Hg/Xe lamp (Oriel) with a total output power of 200 W. The lamp illumination was filtered by a UV filter (Thorlabs) to remove the ultraviolet light, and an 1100 nm short-pass filter (Omega) to remove the NIR-II light with wavelengths longer than 1100 nm. The excitation light cleaned by these filters was dispersed by a grating-based monochromator (Oriel), generating excitation lines at a single, user-designated wavelength with a bandwidth of 15 nm. The monochromatic excitation light was then focused onto a 1 mm path quartz cuvette (Starna Cells) with the SWNT solution loaded inside. The emitted fluorescence from the SWNT solution was collected in the transmission geometry, where the transmitted excitation light was rejected by an 1100-nm long-pass filter (Thorlabs). Fluorescence in the range of 1100-2100 nm was allowed to pass through the emission filter and was collected by a grating-based triple-turret spectrometer (Acton SP2300i) equipped with a one-dimensional (1D) indium-gallium-arsenide (InGaAs) linear array detector (Princeton Instruments 1D OMA-V). The raw PLE spectra were corrected after data acquisition, in order to account for the difference of excitation power at different wavelengths, the extinction profile of the emission filter, and the sensitivity profile of the 1D detector, using the MATLAB software.

[0838] According to the PLE results, a chiral angle (θ) versus diameter (d) map is generated from the data. The map is shown in FIG. 4. Within the map, the circle areas are proportional to the concentration of the single semiconducting SWNT in the dispersion. FIG. 4 shows that the semiconducting SWNTs dispersed by polymer Pc have diameters in the range from 1.3 to 1.6 nm, with the majority of the semiconducting SWNTs dispersed by polymer Pc have diameters in the range of 1.4 to 1.5 nm.

Example 8

Preparation of an Organic Field Effect Transistor (OFET), Wherein the Semiconducting Layer is Formed from Composition A-6 Comprising Semiconducting SWNTs and Polymer Pc

[0839] The drain and source electrodes for bottom-contact device electrodes were fabricated on a highly doped 4 inch silicon wafer with 300 nm SiO.sub.2 by photolithography. A bilayer of Cr (3 nm) and Au (25 nm) was deposited by thermal evaporation as the source-drain electrodes, followed by a lift-off process in acetone. The substrate was then soaked in a diluted solution of composition A-6 comprising semiconducting SWNTs and polymer Pc prepared as described in example 7 (1:5 ratio is toluene) for 5 h, and then substrate was rinsed with toluene and annealed at 200° C. for 30 min under ambient conditions.

[0840] The evaluations of the OFET (L=100 μm, W=2000 μm) were carried out in atmosphere on a probe stage using a Keithley 4200 SCS as parameter analyzer. The carrier mobility, p, was calculated from the data in the saturated regime (V.sub.DS=−40V). The OFET simultaneously demonstrate a high hole mobility of 41.2 cm.sup.2 V.sup.−1 s.sup.−1 and an on/off ratio of 3.6×10.sup.4.

Example 9

Preparation of Compositions Comprising Semiconducting SWNTs and Polymer Pe

[0841] 5 mg of polymer Pe and 5 mg, 7 mg, 8 mg, 10 mg, respectively, 12 mg of arc-discharged SWNTs (tradename “P2 SWNT” from Carbon Solutions Inc, Riverside, Calif.; 90% purity for SWNTs) were mixed in 25 mL of toluene and ultrasonicated for 30 min at an amplitude level of 70% (Cole Parmer ultrasonicator 750 W). The dispersion was then centrifuged at 17 000 rpm for 30 min at 16° C. (Sorvall RCSC-plus). The supernatants were collected and represent composition A-8, A-9, A-10, A-11 and A-12.

[0842] Composition A-8 comprises semiconducting SWNTs and polymer Pe, and is derived from the dispersion of 5 mg Pe and 5 mg arc-discharged SWNTs.

[0843] Composition A-9 comprises semiconducting SWNTs and polymer Pe, and is derived from the dispersion of 5 mg Pe and 7 mg arc-discharged SWNTs.

[0844] Composition A-10 comprises semiconducting SWNTs and polymer Pe, and is derived from the dispersion of 5 mg Pe and 8 mg arc-discharged SWNTs.

[0845] Composition A-11 comprises semiconducting SWNTs and polymer Pe, and is derived from the dispersion of 5 mg Pe and 10 mg arc-discharged SWNTs.

[0846] Composition A-12 comprises semiconducting SWNTs and polymer Pe, and is derived from the dispersion of 5 mg Pe and 12 mg arc-discharged SWNTs.

[0847] Compositions A-8, A-9, A-10, A-11 and A-12 were drop-casted on a glass substrate and annealed at 500° C. under Argon for 1 h in order to yield polymer-removed compositions A-8′, A-9′, A-10′, A-11′ and A-12′.

[0848] Composition A-8′ comprises semiconducting SWNTs and is derived from composition A-8.

[0849] Composition A-9′ comprises semiconducting SWNTs and is derived from composition A-9.

[0850] Composition A-10′ comprises semiconducting SWNTs and is derived from composition A-10.

[0851] Composition A-11′ comprises semiconducting SWNTs and is derived from composition A-11.

[0852] Composition A-12′ comprises semiconducting SWNTs and is derived from composition A-12.

[0853] FIG. 6 shows the normalized UV-VIS spectra of compositions A-8′, A-9′, A-10′, A-11′ and A-12′ in solid state.

[0854] Metallic SWNTs absorb in the range of 600 to 850 nm. Semiconducting SWNTs absorb in the range of 900 to 1330 nm. FIG. 6 shows that that the absorption of compositions A-11′ in the range of 600 to 850 nm is more decreased than to the absorption of A-8′, A-9′, A-10′ and A-12′ in this wavelength range. Thus, the dispersion of 5 mg of polymer Pe and 10 mg of arc-discharged SWNTs in 25 mL toluene yields the highest semiconducting SWNT/metallic SWNT ratio in the supernatant.

Example 10

Preparation of an Organic Field Effect Transistor (OFET), Wherein the Semiconducting Layer is Formed from Compositions A-8, A-9, A-10, A-11, Respectively, A-12 Comprising Semiconducting SWNTs and Polymer Pe

[0855] The drain and source electrodes for bottom-contact device electrodes were fabricated on a highly doped 4 inch silicon wafer with 300 nm SiO.sub.2 by photolithography. A bilayer of Cr (3 nm) and Au (25 nm) was deposited by thermal evaporation as the source-drain electrodes, followed by a lift-off process in acetone. Then, composition A-8, A-9, A-10, A-11, respectively, A-12 comprising semiconducting SWNTs and polymer Pe prepared as described in example 9 was deposited by solution shearing (slot-die coating) under ambient conditions. The composition (15 μL) was first sheared on the substrate at a speed of 0.05 mm/s. Then toluene (20 μL) was sheared on the substrate at a speed of 0.05 mm/s to remove most of the wrapped polymers. The two shearing processes were repeated for 5 times to achieve a dense SWNT. Finally, the substrate was rinsed with toluene, dried with nitrogen flow, and annealed at 150° C. for 30 min under ambient conditions.

[0856] The evaluations of the OFETs (L=20 μm or 30 μm) were carried out in atmosphere on a probe stage using a Keithley 4200 SCS as parameter analyzer. The carrier mobility, p, was calculated from the data in the saturated regime (V.sub.DS=−40V). The OFET simultaneously demonstrate high hole mobilities of about 41 to 57 cm.sup.2 V.sup.−1 s.sup.−1 and on/off ratios of about 10.sup.3 to 10.sup.4.

[0857] The device with the highest mobility of 57 cm.sup.2/Vs was obtained with composition A-11. The device had a channel length of 30 μm and a channel width of 600 μm, and the on/off ratio was 1.5×10.sup.3.

Example 11

Preparation of Polymer Pf

[0858] ##STR00101##

[0859] Polymer Pf was prepared in analogy to Polymer Pe in example 5, except that 821 mg (1.962 mmol) of compound 2b and 2000 mg (1.962 mmol) of compound 3d are used. GPC (1,2,4-trichlorobenzene, 150° C., polystyrene standard): M.sub.n=13.2 kDa, M.sub.w=26.7 kDa, PDI=2.03.

Example 12

Preparation of Polymer Pg

[0860] ##STR00102##

[0861] Polymer Pg was prepared in analogy to Polymer Pc in example 1, except that 1006 mg (2.9 mmol) of compound 2a and 137 mg (0.3 mmol) of compound 2b, and 2989 mg (3.2 mmol) of compound 3a are used. Polymer Pg is a random polymer. GPC (1,2,4-trichlorobenzene, 150° C., polystyrene standard): M.sub.n=18.4 kDa, M.sub.w=35.8 kDa, PDI=1.94.

Example 13

Preparation of Polymer pH

[0862] Polymer Ph was prepared in analogy to Polymer Pc in example 1, except that 602 mg (1.75 mmol) of compound 2a and 184 mg (0.4 mmol) of compound 2b, and 2011 mg (2.15 mmol) of compound 3a are used. Polymer Ph is a random polymer. GPC (1,2,4-trichlorobenzene, 150° C., polystyrene standard): M.sub.n=24.5 kDa, M.sub.w=54.7 kDa, PDI=1.99.

Example 14

Preparation of Polymer Pi

[0863] Polymer Pi was prepared in analogy to Polymer Pc in example 1, except that 465 mg (1.3 mmol) of compound 2a and 379 mg (0.9 mmol) of compound 2b, and 2067 mg (2.2 mmol) of compound 3a are used. Polymer Pi is a random polymer. GPC (1,2,4-trichlorobenzene, 150° C., polystyrene standard): M.sub.n=16.4 kDa, M.sub.w=31.1 kDa, PDI=1.90.

Example 15

Preparation of Compositions Comprising Semiconducting SWNTs and Polymer Pf, Pg, pH, Respectively, Pi

[0864] 5 mg of polymer Pf, Pg, Ph, Pi and 5 mg of arc-discharged SWNTs (tradename “P2-SWNT” from Carbon Solutions Inc, Riverside, Calif.; 90% purity for SWNTs) were mixed in 25 mL of toluene and ultrasonicated for 30 min at an amplitude level of 70% (Cole Parmer ultrasonicator 750 W). The dispersion was then centrifuged at 17 000 rpm for 30 min at 16° C. (Sorvall RCSC-plus). The supernatants were collected and represent composition A-13, A-14, A-15, respectively, A-16.

[0865] Composition A-13 comprises semiconducting SWNTs and polymer Pf.

[0866] Composition A-14 comprises semiconducting SWNTs and polymer Pg.

[0867] Composition A-15 comprises semiconducting SWNTs and polymer Ph.

[0868] Composition A-16 comprises semiconducting SWNTs and polymer Pi.

[0869] Compositions A-13, A-14, A-15 and A-16 were drop-casted on a glass substrate and annealed at 500° C. under Argon for 1 h in order to yield polymer-removed compositions A-13′, A-14′, A15′ and A-16′.

[0870] Composition A-13′ comprises semiconducting SWNTs and is derived from composition A-13.

[0871] Composition A-14′ comprises semiconducting SWNTs and is derived from composition A-14.

[0872] Composition A-15′ comprises semiconducting SWNTs and is derived from composition A-15.

[0873] Composition A-16′ comprises semiconducting SWNTs and is derived from composition A-16.

[0874] For comparison, arc-discharged SWNTs (tradename “P2 SWNT” from Carbon Solutions Inc, Riverside, Calif.; 90% purity for SWNTs) dispersed in 1% sodium dodecylbenzenesulfonate (SDBS) aqueous solution was drop-casted on a glass substrate and annealed at 500° C. under Ar for 1 h in order to yield SDBS-removed arc-discharged SWNTs.

[0875] FIG. 7 shows the normalized UV-VIS spectra of compositions A-13′, A-14′, A-15′, A-16′ and SDBS-removed arc-discharged SWNTs in solid state

[0876] Metallic SWNTs absorb in the range of 600 to 850 nm. Semiconducting SWNTs absorb in the range of 900 to 1330 nm. FIG. 7 clearly shows that the absorption of compositions A-13′, A14′, A-15′, A-16′ in the range of 600 to 850 nm is decreased compared to the absorption of SDS-removed arc-discharged SWNTs in this wavelength range. FIG. 7 also shows that the absorption of compositions A-13′, A-14′, A-15′, A-16′ in the range of 900 to 1330 nm is increased compared to the absorption of SDS-removed arc-discharged SWNTs in this wavelength range. Thus, the ratio of semiconducting SWNT/metallic SWNT is higher in A-13′, A-14′, A-15′, A-16′ compositions than in SDBS-removed arc-discharged SWNTs. Composition A-13′ shows the highest ratio of semiconducting SWNT/metallic SWNT.