PAD-TEMPERATURE REGULATING APPARATUS, AND POLISHING APPARATUS
20220305617 · 2022-09-29
Inventors
Cpc classification
B24B55/02
PERFORMING OPERATIONS; TRANSPORTING
International classification
B24B55/02
PERFORMING OPERATIONS; TRANSPORTING
B24B37/04
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A pad-temperature regulating apparatus is disclosed, which includes a heat exchanger capable of being cleaned in a limited space. A pad-temperature regulating apparatus includes a heat exchanger configured to contact a polishing pad to exchange heat with the polishing pad, a moving mechanism configured to move the heat exchanger between a temperature regulating position where the heat exchanger can exchange heat with the polishing pad, and a retreat position located on a side of the polishing pad, and a cleaning mechanism configured to clean the heat exchanger moved to the retreat position. The heat exchanger has an approximate triangular shape in a horizontal cross-section, and a longest side of the heat exchanger faces the polishing pad when the heat exchanger is moved to the retreat position.
Claims
1. A pad-temperature regulating apparatus for regulating a surface temperature of a polishing pad, comprising: a heat exchanger configured to contact the polishing pad to exchange heat with the polishing pad; a moving mechanism configured to move the heat exchanger between a temperature regulating position where the heat exchanger can exchange heat with the polishing pad, and a retreat position located on a side of the polishing pad; and a cleaning mechanism configured to clean the heat exchanger moved to the retreat position, wherein the heat exchanger has an approximate triangular shape in a horizontal cross-section, and a longest side of the heat exchanger faces the polishing pad when the heat exchanger is moved to the retreat position.
2. The pad-temperature regulating apparatus according to claim 1, wherein the heat exchanger has a heating flow passage and a cooling flow passage into which a heating liquid having a regulated temperature and a cooling liquid having a regulated temperature are supplied respectively, the heating flow passage and the cooling flow passage are arranged next to each other, and extend in a spiral manner along an outer shape of the heat exchanger, an inlet of the heating flow passage and an inlet of the cooling flow passage are placed at a periphery of the heat exchanger, and an outlet of the heating flow passage and an outlet of the cooling flow passage are placed at a center of the heat exchanger.
3. The pad-temperature regulating apparatus according to claim 1, wherein the heat exchanger has an approximately isosceles triangular shape in the horizontal cross section, which is linearly symmetrical about a line connecting a midpoint of the long side and an intersection point of rest short sides.
4. The pad-temperature regulating apparatus according to claim 3, wherein the heat exchanger has a shape in which the midpoint of the long side projects outward from a straight line connecting both ends of the long side.
5. The pad-temperature regulating apparatus according to claim 1, wherein the moving mechanism includes: an arm configured to hold the heat exchanger; an elevating mechanism configured to vertically move the heat exchanger through the arm; and a link mechanism which is attached to the heat exchanger, and is configured to couple the heat exchanger to the arm, and wherein the link mechanism allows vertical movement of the heat exchanger relative to the arm, while restricting horizontal movement of the heat exchanger relative to the arm.
6. The pad-temperature regulating apparatus according to claim 5, wherein the link mechanism includes; a first link arm which is coupled to the arm; a second link arm which is coupled to the arm, and is disposed on opposite side of the first link arm across the arm; a first link block attached to an upper surface of the first link arm, a second link block attached to an upper surface of the heat exchanger, and a link rod whose both ends are rotatably supported by the first link block and the second link block, and which has a link projection extending downward, and formed at an end supported by the second link block, wherein the link projection is separated from the upper surface of the second link arm when the heat exchanger is in the temperature regulating position, and the link projection, when the heat exchanger is raised by the elevating mechanism, comes into contact with the upper surface of the second link arm.
7. The pad-temperature regulating apparatus according to claim 6, wherein the link mechanism further includes a stopper which prevents vertical movement of the heat exchanger with respect to the arm, and the stopper is placed in contact with the upper surface of the first link arm when, after the link protrusion of the second link arm contacts the upper surface of the second link arm, the heat exchange is further raised by the elevating mechanism.
8. The pad-temperature regulating apparatus according to claim 1, wherein the cleaning mechanism includes: a cleaning tank into which a bottom surface of the heat exchanger is immersed; and an oscillating mechanism for oscillating the cleaning tank with respect to the heat exchanger.
9. A polishing apparatus in which a substrate is brought into sliding contact with a polishing pad to thereby polish the substrate, comprising: a polishing table for supporting the polishing pad; a polishing head configured to press the substrate against the polishing pad; and a pad-temperature regulating apparatus configured to regulate a surface temperature of the polishing pad; wherein the pad-temperature regulating apparatus comprises the pad-temperature regulating apparatus according to claim 1.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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[0022]
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DESCRIPTION OF EMBODIMENTS
[0039] Embodiments will be described below with reference to the drawings.
[0040]
[0041] The polishing head 1 is vertically movable, and is rotatable about its axis in a direction indicated by arrow. The wafer W is held on a lower surface of the polishing head 1 by, for example, vacuum suction. A motor (not shown) is coupled to the polishing table 2, so that the polishing table 2 can rotate in a direction indicated by arrow. As shown in
[0042] Polishing of the wafer W is performed in the following manner. The wafer W, to be polished, is held by the polishing head 1, and is then rotated by the polishing head 1. The polishing pad 3 is rotated together with the polishing table 2. In this state, the polishing liquid is supplied from the polishing-liquid supply nozzle 4 onto the surface of the polishing pad 3, and the surface of the wafer W is then pressed by the polishing head 1 against the surface 3a, i.e. the polishing surface, of the polishing pad 3. The surface of the wafer W is polished by the sliding contact with the polishing pad 3 in the presence of the polishing liquid. The surface of the wafer W is planarized by the chemical action of the polishing liquid and the mechanical action of abrasive grains contained in the polishing liquid.
[0043] As shown in
[0044] The heating liquid having a regulated temperature is supplied from the heating-liquid supply tank 31 to the heat exchanger 11 through the heating-liquid supply pipe 32, flows in the heat exchanger 11, and is retuned from the heat exchanger 11 to the heating-liquid supply tank 31 through the heating-liquid return pipe 33. In this manner, the heating liquid circulates between the heating-liquid supply tank 31 and the heat exchanger 11. The heating-liquid supply tank 31 has a heater (not shown), so that the heating liquid is heated by the heater to have a predetermined temperature.
[0045] A first on-off valve 41 and a first flow control valve 42 are attached to the heating-liquid supply pipe 32. The first flow control valve 42 is located between the heat exchanger 11 and the first on-off valve 41. The first on-off valve 41 is a valve not having a flow rate regulating function, whereas the first flow control valve 42 is a valve having a flow rate regulating function.
[0046] The liquid supply system 30 further includes a cooling-liquid supply pipe 51 and a cooling-liquid discharge pipe 52, both coupled to the heat exchanger 11. The cooling-liquid supply pipe 51 is coupled to a cooling-liquid supply source (e.g. a cold water supply source) provided in a factory in which the polishing apparatus is installed. The cooling liquid is supplied to the heat exchanger 11 through the cooling-liquid supply pipe 51, flows in the heat exchanger 11, and is drained from the heat exchanger 11 through the cooling-liquid discharge pipe 52. In one embodiment, the cooling liquid that has flowed through the heat exchanger 11 may be returned to the cooling-liquid supply source through the cooling-liquid discharge pipe 52.
[0047] A second on-off valve 55 and a second flow control valve 56 are attached to the cooling-liquid supply pipe 51. The second flow control valve 56 is located between the heat exchanger 11 and the second on-off valve 55. The second on-off valve 55 is a valve not having a flow rate regulating function, whereas the second flow control valve 56 is a valve having a flow rate regulating function.
[0048] The pad-temperature regulating apparatus 5 further includes a pad-temperature measuring device 39 for measuring a surface temperature of the polishing pad 3 (which may hereinafter be referred to as pad surface temperature), and a controller 40 for operating the first flow control valve 42 and the second flow control valve 56 based on the pad surface temperature measured by the pad-temperature measuring device 39. The first on-off valve 41 and the second on-off valve 55 are usually open. A radiation thermometer, which can measure the surface temperature of the polishing pad 3 in a non-contact manner, can be used as the pad-temperature measuring device 39.
[0049] The pad-temperature measuring device 39 measures the surface temperature of the polishing pad 3 in a non-contact manner, and sends the measured value of the surface temperature to the controller 40. Based on the pad surface temperature measured, the controller 40 operates the first flow control valve 42 and the second flow control valve 56 to control the flow rates of the heating liquid and the cooling liquid so that the pad surface temperature is maintained at a preset target temperature. The first flow control valve 42 and the second flow control valve 56 operate according to control signals from the controller 40 and regulate the flow rates of the heating liquid and the cooling liquid to be supplied to the heat exchanger 11. Heat exchange occurs between the polishing pad 3 and the heating liquid and cooling liquid, flowing in the heat exchanger 11, whereby the pad surface temperature changes.
[0050] Such feedback control can maintain the surface temperature of the polishing pad 3 (i.e., the pad surface temperature) at a predetermined target temperature. A PID controller may be used as the controller 40. The target temperature of the polishing pad 3 is determined depending on the type of the wafer W or on the polishing process, and the determined target temperature is inputted into the controller 40 in advance.
[0051] In order to maintain the pad surface temperature at the predetermined target temperature, the heat exchanger 11 is moved to a temperature-regulating position, where the heat exchanger 11 can exchange heat with the polishing pad 3, during polishing of the wafer W. In this embodiment, the heat exchanger 11 lying in the temperature-regulating position is placed in contact with the surface (i.e. the polishing surface) of the polishing pad 3. In this specification, the manner of contact of the heat exchanger 11 with the surface of the polishing pad 3 includes not only direct contact of the heat exchanger 11 with the surface of the polishing pad 3, but also contact of the heat exchanger 11 with the surface of the polishing pad 3 in the presence of a polishing liquid (or slurry) between the heat exchanger 11 and the surface of the polishing pad 3. The temperature-regulating position of the heat exchanger 11 may be a position in which the heat exchanger 11 is separated from the polishing pad 3 as long as the heat exchanger can exchange heat with the polishing pad 3. In any case, heat exchange occurs between the polishing pad 3 and the heating liquid and cooling liquid, flowing in the heat exchanger 11, whereby the pad surface temperature is controlled.
[0052] Hot water may be used as the heating liquid to be supplied to the heat exchanger 11. When it is intended to raise the surface temperature of the polishing pad 3 more quickly, a silicone oil may be used as the heating liquid. Cold water or a silicone oil may be used as the cooling liquid to be supplied to the heat exchanger 11. In the case of using a silicone oil as the cooling liquid, the polishing pad 3 can be cooled quickly by coupling a chiller as a cooling-liquid supply source to the cooling-liquid supply pipe 51, and by cooling the silicone oil to a temperature of not more than 0° C. Pure water can be used as the cold water. In order to cool pure water to produce cold water, a chiller may be used as a cooling-liquid supply source. In this case, cold water that has flowed through the heat exchanger 11 may be returned to the chiller through the cooling-liquid discharge pipe 52.
[0053] The heating-liquid supply pipe 32 and the cooling-liquid supply pipe 51 are completely independent pipes. Thus, the heating liquid and the cooling liquid can be simultaneously supplied to the heat exchanger 11 without mixing with each other. The heating-liquid return pipe 33 and the cooling-liquid discharge pipe 52 are also completely independent pipes. Thus, the heating liquid is returned to the heating-liquid supply tank 31 without mixing with the cooling liquid, while the cooling liquid is either drained or returned to the cooling-liquid supply source without mixing with the heating liquid.
[0054] Next, the heat exchanger 11 will be described with reference to
[0055] As shown in
[0056] As shown in
[0057] The first flow passage 61 has two openings 61a and 61b formed respectively at both ends thereof, and the second channel 62 has two openings 62a and 62b formed respectively at both ends thereof. The heating-liquid supply pipe 32 is coupled to the opening 61a of the first flow passage 61, and the heating-liquid return pipe 33 is coupled to the opening 61b of the first flow passage 61. In other words, the first flow passage 61 serves as a heating-liquid flow passage, the opening 61a of the first flow passage 61 is an inlet of the heating-liquid flow passage, and the opening 61b of the first flow passage 61 is an outlet of the heating-liquid flow passage. The cooling-liquid supply pipe 52 is coupled to the opening 62a of the second flow passage 62, and the cooling-liquid return pipe 52 is coupled to the opening 62b of the second flow passage 62. In other words, the second flow passage 62 serves as a cooling-liquid flow passage, the opening 62a of the second flow passage 62 is an inlet of the cooling-liquid flow passage, and the opening 62b of the second flow passage 62 is an outlet of the cooling-liquid flow passage.
[0058] In one embodiment, the first flow passage 61 may serve as a cooling-liquid flow passage, and the second flow passage 62 may serve as a heating-liquid flow passage. In this case, the opening 61a of the first flow passage 61 is the inlet of the cooling liquid, the opening 61b is the outlet of the cooling liquid, the opening 62a of the second flow passage 62 is the inlet of the heating liquid, and the opening 62b is the outlet of the heating liquid.
[0059] The openings 61a and 62a are placed at a periphery of the heat exchanger 11, and the openings 61a and 62a are placed at the center of the heat exchanger 11. Therefore, the heating liquid and the cooling liquid flow in a spiral manner from the periphery to the center of the heat exchanger 11. The heating flow passage 61 and the cooling flow passage 62 are completely separated, so that the heating liquid and the cooling liquid are not mixed in the heat exchanger 11.
[0060] When the wafer W is polished in the polishing apparatus, dirt, such as abrasive grains contained in the polishing liquid, and polishing debris, adheres to the heat exchanger 11 in contact with the polishing pad 3. Therefore, the pad temperature regulating apparatus 5 has a cleaning apparatus for cleaning dirt attached to the heat exchanger 11. The cleaning apparatus includes a moving mechanism and a cleaning mechanism, which will be described later. The moving mechanism causes the heat exchanger 11 to move from a temperature-regulating position, where the heat exchanger 11 can exchange heat with the polishing pad 3 (i.e., where the heat exchanger 11 directly contacts or is close to the surface of the polishing pad 3), to a retreat position where the heat exchanger 11 is located on the side of the polishing pad 3. The cleaning mechanism serves as a mechanism for cleaning at least a bottom surface of the heat exchanger 11 moved to the retreat position.
[0061]
[0062] The moving mechanism 16 shown in
[0063] In this embodiment, the elevating mechanism 23 is configured as a piston-cylinder mechanism. As shown in
[0064] A main body of the ball spline bearing 21 is supported through a bearing 24 to a frame 38 fixed to the polishing apparatus. The pivoting mechanism 22 includes a motor M1, a first pulley P1 fixed to the shaft 20, a second pulley P2 fixed to a rotational shaft of the motor M1, and a belt B1 riding on these pulleys p1 and p2. When the motor M1 is set in motion, the second pulley P2 is rotated, the rotation of the second pulley P2 is transmitted to the first pulley P1 through the belt B1, and the first pulley P1 is rotated. A side surface of the first pulley P1 is coupled to the main body of the ball spline bearing 21, so that, when the first pulley P1 is rotated, the ball spline bearing 21 and the shaft 20 are pivoted, whereby the arm 15 and the heat exchanger 11 are pivoted with respect to the polishing pad 3. The rotational shaft of the motor M1 is rotated clockwise or counterclockwise, thereby enabling the heat exchanger 11 to be rotated about the shaft 20 so as to be approached to or separated from the polishing pad 3.
[0065] When moving the heat exchanger 11 from the temperature-regulating position to the retreat position, the elevating mechanism 23 of the moving mechanism 16 is firstly set in motion to move the heat exchanger 11 above the polishing pad 3. Next, the pivoting mechanism 22 is set in motion to pivot the heat exchanger 11 to the retreat position beside the polishing pad 3. As shown in
[0066]
[0067] The cleaning tank 66 has a bottomed cylindrical shape whose upper part is open. A cleaning-liquid supply line (not shown) is coupled to the cleaning tank 60, and a cleaning liquid is supplied to and stored in the cleaning tank 66 through the cleaning-liquid supply line. A cleaning liquid discharge line (not shown) is also coupled to the cleaning tank 66, and the cleaning liquid used for cleaning the heat exchanger 11 is discharged from the cleaning-liquid discharge line. The cleaning-liquid supply line is, for example, coupled to an opening formed in a side wall of the cleaning tank 66. The cleaning-liquid discharge line is, for example, coupled to an opening in a bottom wall of the cleaning tank 66.
[0068] Pure water can be used as the cleaning liquid, for example. In one embodiment, the cleaning liquid may be isopropyl alcohol (IPA), or a mixture of pure water and isopropyl alcohol. The cleaning liquid may contain a surfactant.
[0069] The oscillating mechanism 68 shown in
[0070] As shown in
[0071] The bottom surface of the heat exchanger 11 (having the approximate triangular shape) according to this embodiment has an area approximately half that of the bottom surface of the conventional heat exchanger 111 (having a circular shape) shown in
[0072] In these experiments, a polishing rate of the wafer W (reference polishing rate) was first measured under the condition that the temperature of the polishing pad was not regulated by the heat exchanger 11 and the heat exchanger 111. Next, the polishing rates were measured when the heat exchanger 11 according to this embodiment and the conventional heat exchanger 111 were maintained at the same temperature (e.g., 80° C.) and the wafers W were polished respectively.
[0073] When the temperature of the polishing pad was regulated using the conventional heat exchanger 111, the polishing rate of the wafer W was increased by 15% compared to the reference polishing rate. In contrast, the polishing rate of the wafer W when the temperature of the polishing pad was regulated using the heat exchanger 11 according to this embodiment was increased by 13.7% compared to the reference polishing rate. It has found from these experimental results that the polishing rate of the wafer W when the temperature of the polishing pad was regulated using the heat exchanger 11 according to this embodiment was almost the same, although slightly lower than the polishing rate of the wafer W when the temperature of the polishing pad was regulated using the conventional heat exchanger 111.
[0074] Thus, according to this embodiment, since the heat exchanger 11 has the approximate triangular shape in horizontal cross-sectional view, the heat exchanger 11 can be cleaned in the vacant space formed between the polishing pad 3 and the partition walls 81 that divide the polishing chamber 80. In other words, the heat exchanger 11 can be cleaned in the cleaning tank 66 provided in the limited space having the triangular shape.
[0075] When the polishing pad 3 is rotated, undulation may occur on the surface (i.e., the polishing surface) of the polishing pad 3. Further, in some cases, the polishing of the wafer W may be performed in a condition where the heat exchanger 11 is slightly separated from the polishing pad 3 by penetrating the polishing liquid (slurry) between the heat exchanger 11 and the surface of the polishing pad 3. Accordingly, the heat exchanger 11 is preferably coupled to the arm 15 by a coupling mechanism that allows the heat exchanger 11 to move with respect to the arm 15 to the extent that the heat exchanger 11 can follow the undulation of the polishing surface, and to the extent that the heat exchanger 11 can be separated from the polishing pad 3 by a buoyancy of the polishing liquid. On the other hand, if the direction of movement of the heat exchanger 11 relative to the arm 15 is allowed to be unrestricted, the heat exchanger 11 move freely in the cleaning tank 66 due to the cleaning liquid shaking in the cleaning tank 66, and as a result, there is a risk that parts of the coupling mechanism are significantly worn out.
[0076] Therefore, the movement mechanism 16 of the pad-temperature regulating apparatus 5 has a link mechanism that allows vertical movement of the heat exchanger 11 relative to the arm 15, but restricts horizontal movement of the heat exchanger 11 relative to the arm 15. The heat exchanger 11 is coupled to the arm 15 through this link mechanism. In the following, an example of such link mechanism will be explained with reference to
[0077]
[0078] The link mechanism 70 shown in
[0079]
[0080]
[0081] Next, with reference to
[0082] As shown in
[0083] Next, when, in order to move the heat exchanger 11 to the retreat position, the elevating mechanism 23 (see
[0084] In this state, the heat exchanger 11 is moved to the cleaning tank 66 of the cleaning mechanism 65 by the moving mechanism 16, and is cleaned by the cleaning mechanism 65 (see
[0085] The previous description of embodiments is provided to enable a person skilled in the art to make and use the present invention. Moreover, various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles and specific examples defined herein may be applied to other embodiments. Therefore, the present invention is not intended to be limited to the embodiments described herein but is to be accorded the widest scope as defined by limitation of the claims.