Black phosphorus optical modulators for phase, amplitude and polarization control

Abstract

Resonant optical cavities incorporating black phosphorus to enable electrically tunable control of light are disclosed. Methods and devices are described that use black phosphorus as an electrically tunable optical material to control phase, amplitude and/or polarization of light from visible to mid-infrared wavelengths. The operating wavelength of the optical cavities depends on the thickness of the embedded black phosphorous. Tunable control of light is performed by adjusting the doping level of black phosphorous.

Claims

1. An optical device configured to receive an input light and generate an output light, the optical device comprising an optical cavity comprising a black phosphorous layer on a dielectric gate layer, the dielectric gate layer being above a substrate, the black phosphorus layer having a set thickness and voltage-controllable doping levels, and a voltage input on the black phosphorous layer configured to receive a control voltage applied across the black phosphorous layer and the substrate to vary a doping level of the black phosphorous layer, wherein variation of the doping level of the black phosphorous layer modulates, based on the set thickness and a polarization state of the input light, a) a phase of the input light, b) an amplitude of the input light, or c) a polarization of the input light or a combination thereof; wherein the optical cavity includes a top and a bottom reflector; the top reflector being placed on the black phosphorous layer, and the bottom reflector being placed on the substrate; wherein the top reflector comprises a plurality of top layers, each top layer including a pair of a first top reflector layer and a second top reflector layer placed on the first top reflector layer, the first and the second top reflector layers being made of different materials, and the bottom reflector comprises a plurality of bottom layers, each bottom layer including a pair of a first bottom reflector layer and a second bottom reflector layer placed on the first bottom reflector layer, the first and the second bottom reflector layer being made from different materials; wherein each first top reflector layer comprises SiO.sub.2, each first bottom reflector layer comprises AlAs, and each second bottom reflector layer comprises Al.sub.0.1Ga.sub.0.9.

2. The optical device of claim 1 having an operating wavelength set as a function of the set thickness of the black phosphorous layer and a structure of the optical cavity.

3. The optical device of claim 1 implemented as a phase modulator, wherein the input light is linearly polarized along an armchair axis of the black phosphorous layer.

4. The optical device of claim 1 implemented as an electrically tunable waveplate, wherein the input light is circularly or elliptically polarized and the output light is linearly polarized.

5. The optical device of claim 1 implemented as an electrically tunable waveplate, wherein the input light is linearly polarized and the output light is circularly or elliptically polarized.

6. The optical device of claim 1 implemented as an amplitude modulator, wherein the input light is linearly polarized along an armchair axis of the black phosphorous layer.

7. The optical device of claim 1 implemented as a linear polarizer, wherein the input light is unpolarized and the output light is linearly polarized.

8. The optical device of claim 1, wherein the black phosphorous layer has a thickness in a range of 1 to 10 nm.

9. The optical device of claim 1, wherein thicknesses of the first and second top reflectors and the first and second bottom reflectors are selected based on an operating wavelength of the optical device.

10. The optical device of claim 1, wherein the optical cavity is resonant below a band edge of the black phosphorous layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIGS. 1A-1B show an exemplary optical cavity in accordance with an embodiment of the present disclosure.

(2) FIGS. 2A-2F show performance results of exemplary optical cavities according to embodiments of the present disclosure.

DETAILED DESCRIPTION

(3) Throughout this document, the terms “armchair axis” and “zigzag axis” refer to the two in-plane axes of the phosphorous crystal that are perpendicular to each other. More in particular, the term “armchair axis” refers to the crystal axis which is highly electrically tunable. The term “zigzag axis” refers to the crystal axis which has a negligible tunability.

(4) FIG. 1A shows an exemplary optical cavity (100A) in accordance with an embodiment of the present disclosure. The optical cavity (100A) comprises a substrate (110), a bottom reflector (120), a gate dielectric (130), a black phosphorous layer (140), and a top reflector (150). FIG. 1B shows a cross section of the optical cavity (100A).

(5) According to various embodiments of the present disclosure: the optical cavity (100A) may be manufactured according to a double distributed Bragg reflector (DBR) structure, although structures other than a DBR structure may also be envisaged the substrate is made of GaAs although other similar materials may also be envisaged the bottom and top reflector comprise several layers, each including a pair of a first reflector layer with a second reflector layer atop the first reflector layer, the first and the second reflector layers being made from different materials. By way of example, and not of limitation, bottom reflector (120) may be a DBR comprising 40 pairs of AlAs/Al.sub.0.1Ga.sub.0.9 while top reflector (150) may be a DBR comprising 10 pairs of SiO.sub.2/SiN.sub.x. in the case of the DBR structure, the reflector layers have thicknesses of λ/4n where λ represents the nominal operating wavelength and n is the refractive index of each layer. the gate dielectric may be made of Al.sub.2O.sub.3 with a thickness within the nm range (e.g. 10 nm) the black phosphorous layer (140) may have a thickness within the nm range (e.g. 1 to 10 nm) optical cavity (100A) is resonant below the band edge of the black phosphorus where absorption is low but substantial refractive index changes with doping persist

(6) The voltage (VG) is applied across the black phosphorous layer (140) and the substrate (110) to inject carriers into the black phosphorous layer. By varying the applied voltage (VG), different doping levels may be created. As will be described more in detail later, and through exemplary performance results, varying the doping level of black phosphorous controls the tunability of the optical cavity (100A) when functioning as an anisotropic phase, amplitude, and polarization modulator. According to embodiments of the present disclosure, the thickness of the black phosphorous layer (140) changes the band structure of the phosphorous and this determines the wavelength at which the optical cavity (100) will provide the desired functionality. In practice, the operation wavelength may be selected based on the application, and then the black phosphorous thickness and the optical cavity structure may be adjusted to accommodate the selected wavelength of operation.

(7) With reference to FIGS. 1A-1B, in order to model the phase and amplitude modulation possible in the optical cavity (100), the inventors have used transfer matrix methods such as those adopted by the Lumerical® FDTD software package to calculate reflected phase and intensity as the black phosphorus refractive index is varied. In particular, black phosphorus with an exemplary thickness of 5 nm has been modeled to generate a series of results that will be discussed throughout the present disclosure, Modulation of the zig-zag axis refractive index has been assumed to be negligible throughout the modeling process.

(8) The calculated phase and amplitude modulation results for the structure of FIGS. 1A-1B are presented in FIGS. 2A-2C. FIG. 2A shows real and complex refractive index for 5 nm black phosphorus under electrostatic gating to various charge densities. FIG. 2B shows the calculated reflected phase response for the optical cavity (100A) of FIG. 1A, for light polarized along each crystal axis and a range of injected carrier densities. FIG. 2C shows the calculated reflectance intensity for the optical cavity (100A) of FIG. 1A, for light polarized along each crystal axis and the same range of injected carrier densities.

(9) The large change in complex refractive index with charge injection, illustrated in FIG. 2A, generates strong phase modulation across the optical resonance. As shown in FIGS. 2B-2C, reflected phase is tuned across 246 degrees at approximately 2.4 μm for the optical cavity (200) of FIGS. 1A-1B, while reflectance intensity is maintained above 75 percent. To the best of the inventors' knowledge, the observed high phase modulation and low reflectance loss surpass the performance of existing electrically-tunable, far-field devices. Further, the armchair-axis reflected phase value sweeps through the zig-zag axis value near a carrier density of 1×10.sup.13 cm.sup.−2. As a result, while the optical cavity (100) of FIGS. 1A-1B may function as a standard phase modulator for light linearly polarized along the armchair crystal axis, for other polarizations such cavity may act as an electrically tunable waveplate, converting circularly or elliptically polarized light to linearly polarized light and vice versa.

(10) According to the teachings of the present disclosure, the quality factor of the optical cavity (100) increases by increasing the number of pairs in the top (150) and bottom (120) reflectors. As such quality factor is increased, the reflected phase modulation increases, but the reflectance intensity minimum decreases. This tradeoff, which allows the performance of the optical cavity (100) to be optimized for a given application, is illustrated in FIG. 2D.

(11) By scaling the operating frequency of the cavity, different embodiments in accordance with the present disclosure may be envisaged. By way of example, in what follows, the performance of the optical cavity (100A) is described in an embodiment where the top reflector (150) comprises 12 pairs of different materials, the embodiment operating at 2.1 μm. In general, the optical cavity (100A) may be made to create a resonance at a target wavelength. For amplitude modulation, this may be done near the band edge, to allow significant absorption. For phase modulation, this is done significantly sub-gap, to minimize absorption. The thicknesses of each of the individual reflector layers are all quarter-wavelength to generate the resonant optical response of the distributed Bragg reflector. For this case, FIG. 2E shows the calculated reflectance intensity response for light polarized along each crystal axis and a range of injected carrier densities, and FIG. 2F shows the calculated reflected phase response for light polarized along each crystal axis and the same range of injected carrier densities. As can be noticed, more than 98% modulation depth is observed, with an off-state reflectance below 0.1%. Minimal reflected phase modulation is also observed, except in the trivial case where the reflectance is near zero, indicating nearly pure amplitude modulation. Further, the armchair-axis reflectance intensity closely approaches that of the zig-zag axis at a carrier density of 1.5×10.sup.13 cm.sup.−2. As a result, while the optical cavity (100) acts as a standard amplitude modulator for light linearly polarized along the armchair crystal axis, it also can function as an electrically tunable linear polarizer for other polarizations, able to convert unpolarized light to linearly polarized light on demand.

(12) The exemplary performances described above correspond to two different cases wherein the optical cavity (100) operates at wavelengths around 2.4 and 2.1 um. Other embodiments in accordance with the teachings of the present disclosure may also be envisaged wherein changing the thickness of the black phosphorus layer allows its band structure and complex refractive index to be tuned through the near-infrared and into the visible. The operating wavelength of the cavity structures described here can be tuned as well, to allow efficient modulation at any of the technologically important bands within this wavelength range, such as the 1550 nm C band used for telecommunications.