SEMICONDCUTOR LIGHT-EMITTING DEVICE AND FABRICATING METHOD THEREOF

Abstract

A semiconductor light-emitting device including a light-emitting diode chip and an electrode disposed thereon is provided. The electrode at least includes a plated silver alloy (Ag.sub.1-xY.sub.x) layer, wherein the Y of the Ag.sub.1-xY.sub.x layer includes metals forming a complete solid solution with Ag at arbitrary weight percentage, and the X of the Ag.sub.1-xY.sub.x layer is in a range from about 0.02 to 0.15. The fabricating method thereof is also provided.

Claims

1. A semiconductor light-emitting device, comprising: a light-emitting diode chip; and an electrode, disposed on the light-emitting diode chip, the electrode at least comprising a plated silver alloy (Ag.sub.1-xY.sub.x) layer, wherein the Y of the Ag.sub.1-xY.sub.x layer comprises metals forming a complete solid solution with Ag at arbitrary weight percentage, and the X of the Ag.sub.1-xY.sub.x layer is in a range from 0.02 to 0.15.

2. The semiconductor light-emitting device according to claim 1, wherein the Y of the Ag.sub.1-xY.sub.x layer comprises gold, palladium, or an alloy thereof

3. The semiconductor light-emitting device according to claim 1, wherein a thickness of the Ag.sub.1-xY.sub.x layer is between 2 micrometers and 8 micrometers.

4. The semiconductor light-emitting device according to claim 1, wherein an average grain size of the Ag.sub.1-xY.sub.x layer is between 0.5 micrometers and 1.5 micrometers.

5. The semiconductor light-emitting device according to claim 1, wherein the electrode further comprises: an adhesive layer, disposed between the light-emitting diode chip and the Ag.sub.1-xY.sub.x layer; and a seed layer, disposed between the adhesive layer and the Ag.sub.1-xY.sub.x layer.

6. The semiconductor light-emitting device according to claim 5, wherein a material of the adhesive layer comprises nickel, titanium, titanium tungsten, palladium, gold, silver, or an alloy thereof, and a thickness of the adhesive layer is between 1000 angstroms and 3000 angstroms; a material of the seed layer comprises platinum, silver, or an alloy thereof, and a thickness of the seed layer is between 500 angstroms and 1000 angstroms.

7. The semiconductor light-emitting device according to claim 1, further comprising: a solder wire or a bump, disposed on the Ag.sub.1-xY.sub.x layer to be electrically connected with the light-emitting diode chip and another element.

8. A fabricating method of a semiconductor light-emitting device, comprising: providing a light-emitting diode chip; forming a patterned photoresist layer on the light-emitting diode chip, the patterned photoresist layer having an opening, the opening exposing a surface of the light-emitting diode chip; and forming a plated silver alloy (Ag.sub.1-xY.sub.x) layer in the opening by an electroplating process, such that the Ag.sub.1-xY.sub.x layer is located on the light-emitting diode chip and electrically connected with the light-emitting diode chip.

9. The fabricating method of the semiconductor light-emitting device according to claim 8, before foaming the Ag.sub.1-xY.sub.x layer, further comprising: conformally foaming an adhesive material layer on the light-emitting diode chip, the adhesive material layer covering a surface of the patterned photoresist layer and a bottom of the opening; conformally forming a seed material layer on the adhesive material layer; forming a silver alloy material layer on the seed material layer; and removing the patterned photoresist layer to pattern the adhesive material layer, the seed material layer and the silver alloy material layer together.

10. The fabricating method of the semiconductor light-emitting device according to claim 9, wherein a method of forming the adhesive material layer and the seed material layer comprises evaporation, sputtering, or plating.

11. The fabricating method of the semiconductor light-emitting device according to claim 8, after forming the Ag.sub.1-xY.sub.x layer, further comprising forming a solder wire or a bump on the Ag.sub.1-xY.sub.x layer to be electrically connected with the light-emitting diode chip and another element.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

[0020] FIG. 1A to FIG. 1D are schematic cross-sectional views of a manufacturing process of a semiconductor light-emitting device according to an embodiment of the invention.

[0021] FIG. 2A and FIG. 2B are schematic cross-sectional views of a light-emitting diode chip according to an embodiment of the invention.

[0022] FIG. 3A is a schematic view of an electrical connection between the light-emitting diode chip and the carrier in FIG. 2A.

[0023] FIG. 3B is a schematic view of an electrical connection between the light-emitting diode chip and the carrier in FIG. 2B.

DESCRIPTION OF THE EMBODIMENTS

[0024] In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically shown in order to simplify the drawing.

[0025] FIG. 1A to FIG. 1D are schematic cross-sectional views of a manufacturing process of a semiconductor light-emitting device according to an embodiment of the invention. FIG. 2A and FIG. 2B are schematic cross-sectional views of a light-emitting diode chip according to an embodiment of the invention.

[0026] First, referring to FIG. 1A, a light-emitting diode chip 100 is provided. In the embodiment, the light-emitting diode chip 100 is a horizontal type light-emitting diode chip 100a (depicted in FIG. 2A) or a vertical light-emitting diode chip 100b (depicted in FIG. 2B), for example. Here, the horizontal type light-emitting diode chip 100a in FIG. 2A usually includes a substrate 110, an epitaxial laminated layer 120 and a plurality of electrodes 130a and 130b. The substrate 110 is an alumina substrate, a silicon substrate, a silicon nitride substrate, for example. The epitaxial laminated layer 120 is formed on a growth surface of the substrate 110 by a metal organic chemical vapor deposition (MOCVD) process, for example. The electrodes 130a and 130b are located on the epitaxial laminated layer 120 and electrically connected with the epitaxial laminated layer 120. In other words, a good ohmic contact is formed between the electrodes 130a and 130b and the epitaxial laminated layer 120.

[0027] As shown in FIG. 2A, the epitaxial laminated layer 120 in the horizontal type light-emitting diode chip 100a includes a first type doped semiconductor layer 122 (e.g., N-type doped semiconductor layer), a quantum well light-emitting layer 124 (e.g., multiple quantum well light-emitting layer) and a second type doped semiconductor layer 126 (e.g., P-type doped semiconductor layer). The electrode 130a is electrically connected with the first type doped semiconductor layer 122, the electrode 130b is electrically connected with the second type doped semiconductor layer 126, and the electrodes 130a and 130b are located at the same side of the epitaxial laminated layer 120. In other words, the substrate 110 and the electrodes 130a and 130b are located at two opposite sides of the epitaxial laminated layer 120 respectively.

[0028] The vertical type light-emitting diode chip 100b in FIG. 2B usually includes the epitaxial laminated layer 120 and the plurality of electrodes 130a and 130b. The epitaxial laminated layer 120 is formed by a metal organic chemical vapor deposition (MOCVD) process, for example. The electrodes 130a and 130b are located on two opposite sides of the epitaxial laminated layer 120 and electrically connected with the epitaxial laminated layer 120. In other words, a good ohmic contact is formed between the electrodes 130a and 130b and the epitaxial laminated layer 120.

[0029] As shown in FIG. 2B, the epitaxial laminated layer 120 in the vertical type light-emitting diode chip 100b includes the first type doped semiconductor layer 122 (e.g., N-type doped semiconductor layer), the quantum well light-emitting layer 124 (e.g., multiple quantum well light-emitting layer) and the second type doped semiconductor layer 126 (e.g., P-type doped semiconductor layer). The electrode 130a is electrically connected with the first type doped semiconductor layer 122, and the electrode 130b is electrically connected with the second type doped semiconductor layer 126. In other words, the epitaxial laminated layer 120 is located between the electrode 130a and the electrode 130b.

[0030] Then, referring to FIG. 1B, a patterned photoresist layer 200 is formed on the light-emitting diode chip 100. In the embodiment, the patterned photoresist layer 200 has at least one opening 210, and the opening 210 exposes a portion of a surface of the light-emitting diode chip 100. The patterned photoresist layer 200 has a preset pattern, and the preset pattern defines the position where the electrode is desired to be fanned. In other words, the position of the opening 210 of the patterned photoresist layer 200 corresponds to the position where the electrode is desired to be formed.

[0031] Thereafter, referring to FIG. 1C, after the fabrication of the patterned photoresist layer 200 is completed, the patterned photoresist layer 200 is used as a mask, and the fabrication of an electrode material layer 300 is performed on the light-emitting diode chip 100. In an embodiment, the fabrication of the electrode material layer 300 includes the fabrication of an adhesive material layer 310, a seed material layer 320 and a silver alloy material layer 330. The adhesive material layer 310 and the seed material layer 320 are sequentially and conformally formed on a partial region of the light-emitting diode chip 100 and the patterned photoresist layer 200 by the method of evaporation, sputtering, or plating (including electro-plating driven by voltage bias or electroless plating driven by oxidation-reduction reaction), for example. The silver alloy material layer 330 is conformally formed on the seed material layer 320 by electroplating, for example.

[0032] In the embodiment, the adhesive material layer 310 includes nickel, titanium, titanium tungsten, palladium, gold, silver, or an alloy thereof, and a thickness thereof is between 1000 angstroms and 3000 angstroms; the seed material layer 320 includes platinum, silver, or an alloy thereof, and a thickness thereof is between 500 angstroms and 1000 angstroms; the silver alloy material layer (Ag.sub.1-xY.sub.x) 330 includes silver and metal Y, and a thickness thereof is between 2 micrometers and 8 micrometers. Additionally, the metal Y (e.g., gold, palladium, or an alloy thereof) of the silver alloy material layer (Ag.sub.1-xY.sub.x) 330 forms a complete solid solution with Ag at arbitrary weight percentage, and the X is in a range from 0.02 to 0.15. Since the silver alloy material layer 330 is formed by the method of electroplating, an average grain size of the silver alloy material layer 330 formed by the method of electroplating is larger compared with that formed by other film formation method. In the embodiment, the average grain size of the silver alloy material layer 330 formed by the method of electroplating is between 0.5 micrometers and 1.5 micrometers.

[0033] Referring to FIG. 1C and FIG. 1D, after the fabrication of the electrode material layer 300 is completed, the electrode material layer 300 is patterned so as to form an electrode 300′ on the light-emitting diode chip 100, and the position of the electrode 300′ corresponds to the position of the opening 210. In the embodiment, the electrode material layer 300 may be patterned by removing the patterned photoresist layer 200 to achieve. In particular, in the process of removing the patterned photoresist layer 200, a portion of the electrode material layer 300 formed on the patterned photoresist layer 200 is removed with the patterned photoresist layer 200 together. In other words, the patterned photoresist layer 200 and a portion of the electrode material layer 300 thereon are stripped together from the light-emitting diode chip 100 to form the electrode 300′.

[0034] In the embodiment, the electrode 300′ after patterning includes an adhesive layer 310′, a seed layer 320′ and a plated silver alloy layer 330′, wherein the adhesive layer 310′ is located between the light-emitting diode chip 100 and the plated silver alloy layer 330′, and the seed layer 320′ is located between the adhesive layer 310′ and the plated silver alloy layer 330′. The material and the thickness of the adhesive layer 310′ are the same as that of the adhesive material layer 310. The material and the thickness of the seed layer 320′ are the same as that of the seed material layer 320. The material and the thickness of the plated silver alloy layer 330′ are the same as that of the silver alloy material layer (Ag.sub.1-xY.sub.x) 330. Similarly, since the plated silver alloy layer 330′ is formed by the method of electroplating and after the patterning process, an average grain size of the plated silver alloy layer 330′ is larger. In the embodiment, the average grain size of the plated silver alloy layer 330′ is between 0.5 micrometers and 1.5 micrometers.

[0035] Furthermore, the electrode 300′ shown in FIG. 1D may be used in the electrode 130a and the electrode 130b in FIG. 2A and the electrode 130b in FIG. 2B.

[0036] FIG. 3A is a schematic view of an electrical connection between the light-emitting diode chip and the carrier in FIG. 2A. FIG. 3B is a schematic view of an electrical connection between the light-emitting diode chip and the carrier in FIG. 2B. Referring to FIG. 3A and FIG. 3B, after the fabrication of the electrode 130a and the electrode 130b is completed, the light-emitting diode chip 100a in FIG. 2A or the light-emitting diode chip 100b in FIG. 2B of the embodiment may be disposed on another element 400 (e.g., a circuit board), and the electrode 130a and the electrode 130b may be electrically connected with the element 400 by a solder wire 500 or a bump (not shown).

[0037] In at least some of the above embodiments, the plated silver alloy layer in the light-emitting diode chip has good electrical conductivity and thermal conductivity, which are helpful to heat dissipation of the light-emitting diode chip. Additionally, in some of the above embodiments, the plated silver alloy layer and the solder wire has good bonding characteristics therebetween. Accordingly, the plated silver alloy layer in the light-emitting diode chip of the disclosure is helpful to improve the contact resistance between the plated silver alloy layer and the solder wire, thereby enhancing the luminous efficiency of the light-emitting diode chip.

[0038] Although the invention has been described with reference to the above embodiments, it will be apparent to one of ordinary skill in the art that modifications to the described embodiments may be made without departing from the spirit of the invention. Accordingly, the scope of the invention is defined by the attached claims not by the above detailed descriptions.