ROTATING AND HOLDING APPARATUS FOR SEMICONDUCTOR SUBSTRATE AND CONVEYING APPARATUS OF ROTATING AND HOLDING APPARATUS FOR SEMICONDUCTOR SUBSTRATE
20170323818 · 2017-11-09
Inventors
Cpc classification
H01L21/68771
ELECTRICITY
H01L21/68764
ELECTRICITY
International classification
C23C16/458
CHEMISTRY; METALLURGY
Abstract
A holding apparatus for a semiconductor substrate and a conveying apparatus for a semiconductor substrate.
A susceptor is fixed to a rotational driving shaft to be attachable and detachable in a vertical direction, the opening portions are formed to extend through the susceptor in a thickness direction of the susceptor, and a meshing portion which meshes with the substrate holders releasably in a vertical direction so that the substrate holder can rotate according to rotation of the susceptor is provided below the susceptor.
Claims
1. A rotating and holding apparatus for a semiconductor substrate which is used within a reacting furnace in order to form a film on a semiconductor substrate in a vapor-phase state by a metalorganic chemical vapor deposition and which has a susceptor formed in a disc shape to be rotationally moved, a plurality of substrate holders formed in a disc shape, attachably and detachably disposed within a plurality of opening portions provided in the susceptor in an opened fashion and formed to rotate within the opening portions according to rotation of the susceptor, and having upper face portions on which semiconductor substrates are put, and a rotational driving shaft provided below the susceptor and rotating the susceptor, wherein the susceptor is fixed to the rotational driving shaft to be attachable and detachable thereto in a vertical direction, the opening portions are formed to extend through the susceptor in a thickness direction of the susceptor, and a meshing portion with which the substrate holders mesh releasably in the vertical direction to rotate the substrate holders within the opening portions according to rotation of the susceptor is provided below the susceptor.
2. The rotating and holding apparatus for a semiconductor substrate according to claim 1, wherein the meshing portion is formed in a ring shape as a whole, a plurality of first meshing projections is disposed on an upper face portion of the meshing portion radially at constant intervals along a circumferential direction of the meshing portion and a plurality of second meshing projections which can mesh with the first meshing projections is disposed on a lower face portions of the substrate holders radially along peripheral edge portions of the substrate holders, so that when the substrate holders are disposed within the opening portions, the second meshing projections are disposed so as to project below the opening portions to mesh with the first meshing projections.
3. The rotating and holding apparatus for a semiconductor substrate according to claim 2, wherein the first meshing projections are formed of a plurality of slender rectangular parallelepiped portions projecting upward along the thickness direction of the meshing portion and the second meshing projections are formed of a plurality of slender rectangular parallelepiped portions projecting downward along the thickness directions of the substrate holders.
4. The rotating and holding apparatus for a semiconductor substrate according to claim 3, wherein a clearance size between adjacent ones of the first meshing projections is formed to be a clearance size larger than a width size of the second meshing projections, and a clearance size between adjacent ones of the second meshing projections is formed to be a clearance size larger than a width size of the first meshing projections, so that the first meshing projections and the second meshing projections mesh with each other with a gap therebetween.
5. The rotating and holding apparatus for a semiconductor substrate according to claim 2, wherein the opening portions are formed such that diametrical sizes thereof are approximately equal to a radial size of the susceptor, and the opening portions are composed of three opening portions disposed at equal intervals, and the substrate holders are disposed in the opening portions, respectively.
6. The conveying apparatus of the rotating and holding apparatus for a semiconductor substrate according to claim 5, wherein a plurality of projection portions are provided at an upper end portion of the rotational driving shaft and a plurality of recessed portions in which the projection portions can be releasably inserted in an engaging fashion in the vertical direction is formed at a central portion of the susceptor.
7. A conveying apparatus of a rotating and holding apparatus for a semiconductor substrate, which is used for forming a film on a semiconductor substrate in a vapor-phase state by a metalorganic chemical vapor deposition, where a susceptor formed in a disc shape, attachably and detachably engaging a rotational driving shaft disposed below the susceptor, and having substrate holders having semiconductor substrates put on upper faces of the substrate holders and rotatably disposed in a plurality of opening portions provided in an opened fashion is detachably attached to the rotational driving shaft or conveyed out, wherein a conveying arm portion holding the susceptor is provided.
8. The conveying apparatus of a rotating and holding apparatus for a semiconductor substrate according to claim 7, wherein the conveying arm portion is configured to hold a peripheral edge portion of the susceptor.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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BEST MODE FOR CARRYING OUT THE INVENTION
[0068] The present invention will be described in detail below based upon embodiments shown in accompanying drawings.
[0069] [Overall Configuration]
[0070] As shown in
[0071] The susceptor 12 is fixed to the rotational driving shaft 15 to be attachable and detachable in a vertical direction and the opening portions 13 are formed to extend through the susceptor 12 in a thickness direction of the susceptor 12, and a meshing portion 16 releasably meshing with the substrate holders 14 in the vertical direction and allowing rotations of the substrate holders 14 according to rotation of the susceptor 12.
[0072] [Susceptor]
[0073] As shown in
[0074] In this embodiment, as shown in
[0075] As shown in
[0076] In the opening portion 13, a substrate holder slip ring 19 shown in
[0077] As shown in
[0078] [Susceptor •Joining Portion]
[0079] As shown in
[0080] The joining portion 21 is composed of a short cylindrical bulging portion 23 formed below the susceptor 12 and two recessed portions 24 and 24 formed within the budging portion 23 and opened in the back face direction. The pair of recessed portions 24 and 24 is formed in a diametrical direction in a paired fashion. Further, a peripheral edge of a surface portion of the susceptor is formed with a stepped portion 25 to which the susceptor ring 18 shown in
[0081] [Susceptor •Rotational Shaft Portion]
[0082] As shown in
[0083] A joining receiving portion 26 for the susceptor 12 is formed at an upper end portion of the rotational driving shaft 15. As shown in
[0084] Therefore, when the susceptor 12 is joined to the rotational driving shaft 15, the two projection portions 30 and 30 are arranged within the two recessed portions 24 and 24 in an engaging fashion, so that rotational driving force of the rotational driving shaft 15 is transmitted to the susceptor 12 to rotate the susceptor 12.
[0085] Further, as shown in
[0086] [Meshing Portion]
[0087] As shown in
[0088] As shown in
[0089] The first meshing projections 33 are composed of a plurality of slender rectangular parallelepiped portions projecting upward along a thickness direction of the meshing portion 16, they are formed to have a length size of 3.5 mm, a width size of 1 mm, and a height size of 1.3 mm, and the number thereof is 60 as a whole in this embodiment.
[0090] The first meshing projections 33 are formed on an inner half of the upper face portion 35 of the meshing portion 16 in a widthwise direction of the meshing portion 16, and the susceptor slip ring 34 shown in
[0091] The susceptor slip ring 34 is formed in a flat ring shape and when the susceptor slip ring 34 is disposed on the susceptor-putting portion 32, it abuts on the peripheral edge lower face portion of the susceptor main body 17 so that susceptor 12 is rotated smoothly.
[0092] [Substrate Holder]
[0093] As shown in
[0094] A number of second meshing projections 38 capable of meshing with the first meshing projections 33 formed on the susceptor-putting portion 37 are radially formed on a peripheral edge of a lower face portion of the substrate holder main body 36. Further, a recessed portion 39 on which a substrate is to be put is formed approximately over a whole region of an upper face portion of the substrate-putting portion 37.
[0095] A thickness size of the substrate-putting portion 37 is formed to have the same size as a distance size between a surface of the stepped portion 20 of the substrate holder slip ring 19 shown in
[0096] Therefore, when the substrate holder 14 is received in the substrate holder slip ring 19 fixed to the opening portion 13 of the susceptor 12, a surface portion of the substrate-putting portion 37 is disposed to be flash with the surface 44 of the substrate holder slip ring 19, and the second meshing projections 38 are disposed to project below the back face 45 of the substrate holder slip ring 19 to be capable of meshing with the first meshing projections 33.
[0097] The second meshing projections 38 are formed to have a length size of 3.5 mm, a width size of 1 mm, and a height size of 1.3 mm in the same manner as the first meshing projections 33, and in this embodiment, 24 second meshing projections 38 are radially arranged by 24 as a whole.
[0098] In this embodiment, the substrate holder 14 is made of SiC (silicon carbide), and the recessed portion 39 is formed to have a size in which a sheet of 2-inch substrate can be fitted.
[0099] As shown in
[0100] A distance size between the first meshing projections 33 and 33 adjacent to each other is formed to have a distance size larger than the width size of the second meshing projections 38, and a distance size between the second meshing projections 38 and 38 adjacent to each other is formed to be larger than a width size of the first meshing projections 33.
[0101] As a result, the first meshing projections 33 and the second meshing projections 38 mesh with each other with a clearance formed therebetween.
[0102] [Conveying Apparatus]
[0103] Further, as shown in
[0104] In this embodiment, the conveying arm portions 42 and 42 are configured to be arranged in a paired manner in a diametrical direction of the susceptor 12 at a conveying time of the susceptor 12.
[0105] The susceptor conveying apparatus 41 is provided with an actuator with a proper configuration (not shown), the conveying arm portions 42 and 42 driven by the actuator, and a sensor with a proper configuration feeding a detection signal of the actuator so as to be capable of performing such movement control that the conveying arm portions 42 and 42 grasp the peripheral edge projection portion 22 of the susceptor, and it is configured so as to be capable of grasping the susceptor 12 placed outside the reacting furnace to convey the same into the reacting furnace and join the susceptor 12 to the rotational driving shaft 15 and cause the susceptor 12 to engage the meshing portion 16, and detaching the susceptor 12 from the rotational driving shaft 15 to convey the susceptor 12 outside the reacting furnace.
[0106] [Operation]
[0107] A case where the rotating and holding apparatus for a semiconductor substrate according to this embodiment is used to form a film on a semiconductor substrate in a vapor-phase state by a metalorganic chemical vapor deposition will be described below.
[0108] First of all, the substrate holder slip rings 19, 19, and 19 shown in
[0109] In this case, the peripheral edge lower portion 40 of the substrate-putting portion 37 of the substrate holder 14 is engaged with the stepped portion 20 of the substrate holder slip ring 19 to be disposed rotatably. Further, the 2-inch semiconductor substrate is fixed to the recessed portion 39 of the substrate holder-putting portion 37 formed on the upper portion of the substrate holder 14 in an engaging fashion.
[0110] Thereafter, the susceptor 12 is conveyed into the reacting furnace using the susceptor conveying apparatus 41. As shown in
[0111] Further, the susceptor main body portion 17 is put on the meshing portion 16 via the susceptor slip ring 34 and the second meshing projections 38 of the substrate holder 14 are disposed between adjacent the first meshing projections 33 formed on the meshing portion 16, respectively.
[0112] In this state, when the rotational driving shaft 15 starts to rotate by a rotational driving force from the rotational driving shaft, for example, at a rate of two rotations per minute, the susceptor 12 starts to rotate on the susceptor slip ring 34 of the meshing portion 16 at a rate of two rotations per minute. In this case, since the second meshing projection portions 38 of three substrate holders 17 mesh with the first meshing projections 33 of the meshing portion 16, the three substrate holders 17 also start to rotate within the opening portions 13 according to rotation of the susceptor 12.
[0113] Incidentally, when the joining portion 21 of the susceptor 12 is joined to the joining receiving portion 26, such a case may occur that the second meshing projections 38 of any one of the three substrate holders 17 are disposed to overlap with the first meshing projections 33.
[0114] When the second meshing projections 38 are disposed to overlap with the first meshing projections 33 in this manner, as shown in
[0115] In this state, when the rotational driving shaft 15 starts to rotate by the rotational driving force from the rotational driving portion, for example, at a rate of two rotations per minute, the susceptor 12 starts to rotate on the susceptor slip ring 34 on the meshing portion 16 at a rate of two rotations per minute. In this case, since the second meshing projections 38 of any of the three substrate holders 17 mesh with the first meshing projections 33 of the meshing portion 16, even if the second meshing projections 38 are disposed to overlap with the first meshing projections 33, the first meshing projections 33 disposed on the second meshing projections 38 drop from the second meshing projections 38 to mesh with the second meshing projections 38 due to inertia or vibrations according to rotation of the susceptor 21, as shown in
[0116] In this embodiment, since the distance size between the first meshing projections 33 and 33 adjacent to each other is formed to have a distance size larger than the width size of the second meshing projection 38 and the distance size between the second meshing projections 38 and 38 adjacent to each other is formed to have a distance size larger than the width size of the first meshing projection 33, the first meshing projections 33 and the second meshing projections 38 mesh with each other in a loosely fitted state formed therebetween, so that even if any of the first meshing projections 33 is put on the second meshing projections 38, a meshing state can be secured easily according to rotation of the susceptor 12, as described above.
[0117] Thereafter, rotation of the rotational driving shaft 15 is increased up to 10 rotations per minute, so that while each substrate holder 14 revolves on the susceptor 12 at a rate of 10 rotations per minute, it simultaneously rotates within the opening portion 13 at a rate of 25 rotations per minute.
[0118] For example, according to a metalorganic chemical vapor deposition, mixed gas of hydrogen gas, ammonia gas, and trimethyl gallium (TMG) is supplied into the sealed reacting furnace and crystals of gallium nitride are caused to grow on semiconductor substrates disposed on the three substrate holders 14 under a temperature condition of 1100° C.
[0119] When crystals of gallium nitride are formed on the semiconductor substrates in a film state in this manner, as shown in
Advantageous Effect of Embodiment
[0120] In this embodiment, therefore, as described above, since the susceptor 12 is fixed to the rotational driving shaft 15 to be attachable and detachable in the vertical direction and the planetary mechanism where the second meshing projections 38 formed on the lower face of the substrate holders 14 and the first meshing projections 33 formed on the upper face of the meshing portion 16 mesh with each other in the vertical direction is constituted without using the planetary mechanism using spur gears like the conventional manner, attaching and detaching of the susceptor 12 to and from the rotational driving shaft 15 in the vertical direction can be made easy.
[0121] As a result, it becomes unnecessary to open the reacting furnace to manually take the semiconductor substrates having a film which has been formed within the reacting furnace by supplying vapor-phase materials into the reacting furnace out of the reacting furnace and attach semiconductor substrates to be newly processed to the substrate holders 14 on the susceptor 12 within the reacting furnace, which is different from the conventional technique, the susceptor 12 having the semiconductor substrates which have been put on the substrate holders 14 can be taken out of the reacting furnace using the susceptor conveying apparatus 41, and the substrate holders 14 which have semiconductor substrates to be newly subjected to film formation process and which have been disposed on the susceptor 12 can be conveyed and set within the reacting furnace using the susceptor conveying apparatus 41.
[0122] Further, since, while the semiconductor substrates which have been put on the substrate holders 14 are rotating on the substrate holders 14, they are revolved on the susceptor 12 by the planetary mechanism, a temperature distribution acting on the respective semiconductor substrates can be made even within the reacting furnace, and a film pressure distribution to be formed can be made even.
[0123] Further, in this embodiment, since the planetary mechanism is constituted according to meshing of the meshing projections 33 and 38 with each other in the thickness direction of the susceptor 12, which is different from the planetary mechanism utilizing spur gears like the conventional art, the diameter of the susceptor 12 can be reduced, which is different from the rotating and holding apparatus for a semiconductor substrate utilizing the conventional planetary mechanism using spur gears.
[0124] As a result, since the opening portions 13 in which the substrate holders 14 are put are formed such that their diametrical sizes are approximately equal to the radial size of the susceptor 12, they are provided at equal intervals by three in an opened fashion, and the substrate holders 14 are disposed in the opening portions 13, respectively, a large space are not formed at a central portion of the susceptor between the respective substrate holders, which is different from the case where the planetary mechanism is constituted of spur gears in the conventional manner.
[0125] As a result, when a plurality of kinds of vapor-phase materials is supplied into the reacting furnace, such a situation that the vapor-phase materials do not contribute to film formation on the semiconductor substrates due to staying of the vapor-phase materials in the space portion can be prevented, so that the vapor-phase materials are not wasted and a supply efficiency of the vapor-phase materials can be improved.
INDUSTRIAL APPLICABILITY
[0126] The present invention can be widely applied to a semiconductor manufacturing apparatus for forming a film on a semiconductor substrate in a metalorganic chemical vapor deposition and a conveying apparatus of a rotating and holding apparatus for a semiconductor substrate.
EXPLANATION OF REFERENCE NUMERALS
[0127] 10 rotating and holding apparatus for a semiconductor substrate [0128] 12 susceptor [0129] 13 opening portion [0130] 14 substrate holder [0131] 15 rotational driving shaft [0132] 16 meshing portion [0133] 17 susceptor main body [0134] 18 susceptor ring [0135] 19 substrate holder slip ring [0136] 20 stepped portion [0137] 21 joining portion [0138] 22 peripheral edge projection portion [0139] 23 bulging portion [0140] 24 recessed portion [0141] 25 stepped portion [0142] 26 joining receiving portion [0143] 27 rotational driving shaft main body [0144] 28 joining upper end face portion [0145] 29 annular holding portion [0146] 30 projection portion [0147] 31 heater [0148] 32 susceptor-putting portion [0149] 33 first meshing projection [0150] 34 susceptor slip ring [0151] 35 upper face portion [0152] 36 substrate holder main body [0153] 37 substrate-putting portion [0154] 38 second meshing portion [0155] 39 recessed portion [0156] 40 peripheral edge lower portion [0157] 41 susceptor conveying apparatus [0158] 42 conveying arm portion [0159] 43 supporting portion [0160] 44 surface [0161] 45 back face [0162] 60 rotating and holding apparatus for a semiconductor substrate [0163] 61 susceptor [0164] 62 opening portion [0165] 63 substrate holder [0166] 64 ring-like frame portion [0167] 65 opening portion [0168] 66 rotational shaft portion [0169] 67 teeth [0170] 68 spur gear [0171] 69 spur gear [0172] 71 teeth