Methods for reducing metal contamination on a surface of a sapphire substrate by plasma treatment

Abstract

The present disclosure relates to a method for reducing metal contamination on a surface of a substrate. The method involves plasma treatment of the surface of the substrate by ion bombardment, wherein a plasma of a supplied gas is generated, and a bombardment energy of the ions in the plasma is controlled by a radio frequency electromagnetic field. The bombardment energy of the ions is higher than a first threshold so as to tear the metal contamination from the surface of the substrate, and the bombardment energy of the ions is lower than a second threshold so as to prevent a surface quality degradation of the surface of the substrate.

Claims

1. A method for reducing metal contamination on a surface of a sapphire substrate comprising a plasma treatment of the sapphire surface by ion bombardment, wherein a plasma of a supplied gas is generated and wherein a bombardment energy of ions in the plasma is controlled by a radio frequency electromagnetic field providing a power density between 2.0 watts/cm.sup.2 and 3.0 watts/cm.sup.2, the bombardment energy of the ions being higher than a first threshold sufficient to tear the metal contamination from the sapphire surface, and the bombardment energy of the ions being lower than a second threshold so as to prevent a surface quality degradation of the sapphire surface.

2. The method of claim 1, wherein the metal contamination is reduced to lower than 2E.sup.10 atoms/cm.sup.2 by the plasma treatment of the sapphire surface by ion bombardment.

3. The method of claim 2, wherein the metal contamination comprises contaminations from one or more of Ti, Ni, and Fe.

4. The method of claim 1, wherein the supplied gas comprises a noble gas.

5. The method of claim 4, wherein the noble gas comprises argon.

6. The method of claim 1, wherein the supplied gas has a gas pressure between 30 millitorr and 120 millitorr.

7. The method of claim 1, wherein the supplied gas is delivered at a gas flow rate of 75 sccm.

8. The method of claim 1, wherein the plasma treatment is conducted for a duration of from 10 seconds to 60 seconds.

9. The method of claim 1, further comprising bonding the plasma-treated sapphire surface to a semiconductor substrate surface by wafer bonding to obtain a bonded structure.

10. The method of claim 9, further comprising thermally treating the bonded structure to increase a bonding strength between the plasma-treated sapphire surface and the semiconductor substrate surface.

11. A method for reducing metal contamination on a surface of a sapphire substrate comprising a plasma treatment of the sapphire surface by ion bombardment, wherein a plasma of a supplied gas is generated and wherein a bombardment energy of ions in the plasma is controlled by a radio frequency electromagnetic field providing a power density between 2.0 watts/cm.sup.2 and 4.0 watts/cm.sup.2, the bombardment energy of the ions being higher than a first threshold sufficient to tear the metal contamination from the sapphire surface, and the bombardment energy of the ions being lower than a second threshold so as to prevent a surface quality degradation of the sapphire surface, wherein a surface roughness of the sapphire surface remains below a root-mean-square (RMS) value of 0.5 nm.

12. The method of claim 11, wherein the metal contamination is reduced to lower than 2E.sup.10 atoms/cm.sup.2 by the plasma treatment of the sapphire surface by ion bombardment.

13. The method of claim 12, wherein the metal contamination comprises contaminations from one or more of Ti, Ni, and Fe.

14. The method of claim 11, wherein the supplied gas comprises a noble gas.

15. The method of claim 14, wherein the noble gas comprises argon.

16. The method of claim 11, wherein the supplied gas has a gas pressure between 30 millitorr and 120 millitorr.

17. The method of claim 11, wherein the supplied gas is delivered at a gas flow rate of 75 sccm.

18. The method of claim 11, wherein the plasma treatment is conducted for a duration of from 10 seconds to 60 seconds.

19. The method of claim 11, further comprising bonding the plasma-treated sapphire surface to a semiconductor substrate surface by wafer bonding to obtain a bonded structure.

20. The method of claim 19, further comprising thermally treating the bonded structure to increase a bonding strength between the plasma-treated sapphire surface and the semiconductor substrate surface.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 depicts the level of metal contamination at the surface of a sapphire substrate, initially and after various cleaning treatments in accordance with embodiments of the present disclosure. The metal contamination levels of three different elements (Fe, Ni, and Ti) are indicated in number of atoms per square centimeter.

(2) FIG. 2 depicts the roughness of a sapphire substrate surface after various cleaning treatments in accordance with embodiments of the present disclosure. The roughness is measured by Atomic Force Microscopy (AFM) on various scan areas, 2 μm×2 μm, 10 μm×10 μm and 40 μm×40 μm. FIG. 2 shows RMS (“root mean square”) roughness values.

DETAILED DESCRIPTION

(3) The present disclosure relates to a method for reducing the metal contamination on a surface of a substrate comprising a plasma treatment of the surface of the substrate by ion bombardment, wherein a plasma of a supplied gas is generated and wherein a bombardment energy of the ions in the plasma is controlled by a radio frequency (RF) electromagnetic field. The bombardment energy of the ions is higher than a first threshold to tear the metal contaminants from the substrate surface, and the bombardment energy of the ions is lower than a second threshold to prevent a surface quality degradation of the substrate surface.

(4) In some embodiments, the plasma may be generated from at least one kind of noble gas. As a non-limiting embodiment, a pure noble gas, chosen among He, Ne, Ar, Kr, Xe, may be used. A mixture of different noble gases may also be used. Noble gases may be preferred relative to other gases, such as reactive gases like chlorine and boron chloride, to avoid generation of by-products and chlorine contamination.

(5) It is also possible to mix a noble gas or gases with hydrogen gas.

(6) The plasma may be formed in a plasma chamber by delivering the gas into the plasma chamber during the treatment at a controlled flow rate of 75 sccm and at a pressure between 30 millitorr and 120 millitorr. The pressure may be controlled using a vacuum pump connected to the plasma chamber.

(7) The bombardment energy of the ions in the plasma may be primarily dependent on the RF power. A radio frequency electromagnetic field within the plasma chamber is set at a power between 200 watts and 1000 watts, to control the bombardment energy of the ions on the substrate surface (for wafers having a diameter of 150 mm, for example). This corresponds to a power density ranging from around 0.8 watts/cm.sup.2 to 4.0 watts/cm.sup.2. Advantageously, the power density may range from 1.5 watts/cm.sup.2 to 4.0 watts/cm.sup.2.

(8) In order to have a homogeneous and stable result, the plasma treatment may be conducted for a time period in a range extending from 10 seconds to 60 seconds.

(9) The plasma treatment according to the above parameters is efficient to remove the surface and sub-surface metal contamination from the substrate and to keep defectivity and roughness at a level compatible with a high-quality direct bonding process. For this purpose, the surface roughness will be preferably maintained below 0.5 nm RMS, and even advantageously below 0.4 nm RMS (AFM measurement on scanned areas of 2 μm×2 μm, 10 μm×10 μm and 40 μm×40 μm).

(10) The present disclosure is particularly advantageous for the plasma treatment of substrate surfaces of substrates having low chemical reactivity (i.e., inert), and in particular substrates made of a material having a hardness higher than 5 on the Mohs scale. It is even of more interest for materials having a hardness higher than 7 (Mohs scale).

(11) For such materials, the bombardment energy of the ions must reach the surface sputtering energy in order to successfully remove a few atomic layers from the surface and efficiently break bonds between the metal contaminant elements and the surface and sub-surface. Nevertheless, the bombardment energy may be controlled so as to avoid a surface degradation that would prevent subsequent high-quality direct molecular bonding of the substrate to another substrate.

(12) The cleaning method, according to the invention, may be useful for cleaning sapphire substrates, for example.

(13) The applicant has found that metal contamination on such substrates commonly comprises Ti, Ni and Fe elements. Those elements can be detrimental for further processing of the substrate. For instance, when an active layer of silicon is formed on a sapphire substrate exceeding 2E.sup.10 atoms/cm.sup.2 of metal contamination, it induces silicide precipitates in the active silicon layer during or after the SOS fabrication process. The silicide precipitates degrade electrical properties of the active silicon layer.

(14) As illustrated in FIG. 1, Ti, Ni and Fe contamination levels on the initial sapphire substrate, before any cleaning treatment, are higher than 2E.sup.10 atoms/cm.sup.2; in particular, Fe and Ni levels are even higher than 2E.sup.11 atoms/cm.sup.2. Contamination levels have been measured by total reflection X-ray fluorescence (TXRF). TXRF is a surface elemental analysis technique often used for the analysis of particles, residues, and impurities on smooth surfaces. It is currently an important tool for wafer surface contamination control in semiconductor chip manufacturing and, in particular, for analyzing surface metal contamination. The X-ray probe is known to penetrate into the surface of the substrate to a depth of about 5 nm, allowing the analysis of the surface and near sub-surface of substrates.

(15) The plasma treatment, according to the present disclosure allows the level of metal contamination of a sapphire substrate to be reduced below a level of 2E.sup.10 atoms/cm.sup.2, which is a suitable level for the subsequent manufacturing of electronic devices. As illustrated in FIG. 1, two conditions A and B of plasma treatment according to the present disclosure have been tested. They primarily show significantly better cleaning efficiency than a standard cleaning process (namely, an RCA cleaning process), which results are also depicted on FIG. 1. Both conditions, respectively performed with a power density of 2.0 watts/cm.sup.2 (plasma A) and 4.0 watts/cm.sup.2 (plasma B), all other parameters being identical for both conditions, show a good efficiency to remove metal contamination, especially for Fe and Ni species. A power density lower than 0.8 watts/cm.sup.2 hasn't enabled metal contamination residues to be lower than the 2E.sup.10 atoms/cm.sup.2 limit, required for the targeted application. This indicates that the associated bombardment energy of the ions was not above the first threshold to tear the metal contamination from the surface of the substrate. A power density higher than 1.5 watts/cm.sup.2 is preferred to efficiently tear the metal contamination from the surface of the substrate.

(16) To fulfill the application requirements, the surface quality, after plasma treatment, must remain compatible with demanding processes, such as direct molecular bonding processes. The surface quality is evaluated, in the context of the present disclosure, using surface roughness measurements as can be seen in FIG. 2. In FIG. 2, roughness values are RMS values expressed in nanometers. Roughness measurements have been performed using an Atomic Force Microscope (AFM), on scanned areas of 2 μm×2 μm, 10 μm×10 μm and 40 μm×40 μm). As is well known in the industry, AFM is a high-resolution type of scanning probe microscopy, with demonstrated resolution on the order of fractions of a nanometer. The measurements on various scanned areas bring information on the surface quality on different ranges: a smaller scan (e.g., 2 μm×2 μm) is representative of short range roughness that could also be named micro-roughness; a middle scan (e.g., 10 μm×10 μm) is representative of mid-range roughness; and a larger scan (e.g., 40 μm×40 μm) is representative of long range roughness, closer to surface waviness.

(17) FIG. 2 shows an example of surface roughness of an initial sapphire substrate and surface roughness of sapphire substrates after the two previously described conditions of plasma treatment, having, respectively, a power density of 2.0 watts/cm.sup.2 (plasma A) and 4.0 watts/cm.sup.2 (plasma B), all other parameters being identical for both conditions. Those two conditions are representative of two different bombardments energies of ions on the substrate surface.

(18) The results show that the two conditions of plasma lead to expected surface quality in the short-range and mid-range roughness, typically according to AFM scans of 2 μm×2 μm and 10 μm×10 μm. Compared to initial surface roughness, the plasma treatments lead to either identical results, or even better ones.

(19) In the long range roughness, according to AFM scans of 40 μm×40 μm the applicant has observed an increase of the roughness after the plasma treatment B, compared to the initial state. This is a preliminary manifestation of the surface degradation that defines the second bombardment threshold that should not be exceeded, so as to avoid detrimental surface degradation. The detrimental surface degradation state is typically reached when the surface roughness exceeds 0.5 nm RMS. In some circumstances, it is preferable to avoid the surface roughness exceeding 0.4 nm RMS.

(20) According to a preferred embodiment, before the plasma treatment, the sapphire substrate can be submitted to a wet cleaning process, for instance, an RCA-type cleaning process, as a first step, to remove organic and particle contaminants.

(21) After the plasma treatment of the sapphire substrate surface, the sapphire substrate can be prepared for direct wafer bonding onto a semiconductor substrate, which may be or comprise, for example, a silicon wafer. As is well known in the art, the principle of molecular bonding, also known as direct bonding, is based on placing two surfaces into direct contact, i.e., without using any specific bonding material (adhesive, wax, solder, etc.). Such an operation requires the surfaces for bonding to be sufficiently smooth, free from particles or contamination, and to be sufficiently close together to enable contact to be initiated, typically at a distance of less than a few nanometers. Under such circumstances, attractive forces between the two surfaces are high enough to cause molecular bonding to occur (bonding induced by all of the attractive forces (van der Waals forces) involving electron interaction between atoms or molecules of the two surfaces).

(22) The plasma-treated sapphire substrate can thus be bonded onto the semiconductor substrate. Before the bonding, both substrates to be assembled can optionally be submitted to a wet clean and/or to a plasma activation treatment, notably to improve the subsequent bonding strengths between both substrates. In order to further increase the bonding strengths, a step of thermal treatment can also be applied to the bonded structure, after bonding.

(23) After bonding, the semiconductor wafer of the bonded structure can be thinned by a known method such as, grinding, polishing, chemical etching, SMART CUT®, sacrificial oxidation, etc., in order to achieve a final substrate comprising the semiconductor active layer on top of the support substrate. This support substrate may be sapphire in the example of the SOS final substrate. Subsequent high temperature thermal treatments may be applied to the structure to consolidate the bonding interface and increase the bond strength between the bonded substrates. Such a thermal treatment may involve subjecting the bonded substrates to a temperature or temperatures ranging from 700° C. to 950° C., for example.

(24) When a sapphire substrate has been efficiently cleaned before the bonding step, no degradation, due to metal contamination generated precipitates, is observed in the semiconductor top active layer.

(25) An example of a specific embodiment according to the present disclosure is described below.

(26) A 150 mm sapphire substrate as received from suppliers can have iron contamination on a top surface thereof, ranging from 5E.sup.10 atoms/cm.sup.2 to 100E.sup.10 atoms/cm.sup.2. The sapphire substrate is submitted to a plasma treatment, based on an argon gas at a gas flow of 75 sccm and a pressure of 50 milliTorr, for a duration of 30 seconds, with an RF power of 700 watts, corresponding to a power density of 2.8 watts/cm.sup.2. After the plasma treatment of the sapphire substrate surface by ion bombardment, the metallic contamination on the surface is reduced. The iron level is around 0.8E.sup.10 atoms/cm.sup.2. The metal contamination level of Ti and Ni elements is also reduced, respectively, from 3E.sup.10 atoms/cm.sup.2 to 1E.sup.10 atoms/cm.sup.2 and from 180E.sup.10 atoms/cm.sup.2 to 0.4E.sup.10 atoms/cm.sup.2 after plasma treatment.

(27) The surface roughness is compatible with direct bonding, remaining around 0.1 nm RMS at short range and around 0.3 nm RMS at long range.

(28) The sapphire substrate and a silicon substrate are then submitted to a standard RCA clean before bonding. The bonding between both substrates shows a good quality and the assembled structure is subsequently annealed at 150° C. then submitted to standard thinning and annealing processes to achieve the final substrate having a silicon active layer on top of a sapphire substrate.

(29) The plasma treatment, according to the present disclosure, can also be successfully applied to ceramic substrates, for example, as aluminum nitride and silicon carbide. Those substrates, also exhibit low chemical reactivity to standard microelectronics chemicals, and are of increasing interest for various applications in the microelectronics field. The plasma treatment according to the present disclosure allows reduction of metal contamination on the surface and near sub-surface of new commercially available substrates, which currently exhibit contamination levels incompatible with many microelectronics standards.