OPTICAL ASSEMBLY HAVING A THERMALLY CONDUCTIVE COMPONENT
20170261867 · 2017-09-14
Inventors
- Julian Kaller (Koenigsbronn, DE)
- Franz Sorg (Aalen, DE)
- Ralf WINTER (Schwaebisch Gmuend, DE)
- Karl-Stefan Weissenrieder (Elchingen, DE)
Cpc classification
G02B7/181
PHYSICS
G03F7/70958
PHYSICS
G02B7/028
PHYSICS
International classification
Abstract
An optical assembly includes: an optical element, which is transmissive or reflective to radiation at a used wavelength and has an optically used region; and a thermally conductive component, which is arranged outside the optically used region of the optical element. The thermally conductive component can include a material having a thermal conductivity of more than 500 W m.sup.−1 K.sup.−1. Additionally or alternatively, the product of the thickness of the thermally conductive component in millimeters and the thermal conductivity of the material of the thermally conductive component is at least 1 W mm m.sup.−1 K.sup.−1.
Claims
1. An optical assembly, comprising: an optical element that is transmissive or reflective to radiation at a used wavelength, the optical element having an optically used region; and a thermally conductive component arranged outside the optically used region of the optical element, wherein at least one of the following holds: the thermally conductive component comprises a material with a thermal conductivity of more than 500 W m.sup.−1 K.sup.−1; and a product of a thickness of the thermally conductive component in millimeters and the thermal conductivity of the material is greater than 1 W mm m.sup.−1 K.sup.−1.
2. The optical assembly of claim 1, wherein the material has a thermal conductivity of more than 500 W m.sup.−1 K.sup.−1.
3. The optical assembly of claim 1, wherein the material has a thermal conductivity of more than 1000 W m.sup.−1 K.sup.−1.
4. The optical assembly of claim 1, wherein the material has a thermal conductivity of more than 1700 W m.sup.−1 K.sup.−1.
5. The optical assembly of claim 1, wherein the material has a thermal conductivity of more than 2000 W m.sup.−1 K.sup.−1.
6. The optical assembly of claim 1, wherein the product of a thickness of the thermally conductive component in millimeters and the thermal conductivity of the material is greater than 1 W mm m.sup.−1 K.sup.−1.
7. The optical assembly of claim 1, wherein the product of a thickness of the thermally conductive component in millimeters and the thermal conductivity of the material is greater than 10 W mm m.sup.−1 K.sup.−1.
8. The optical assembly of claim 1, wherein the product of a thickness of the thermally conductive component in millimeters and the thermal conductivity of the material is greater than 50 W mm m.sup.−1 K.sup.−1.
9. The optical assembly of claim 1, wherein the material comprises polycrystalline diamond and/or monocrystalline diamond.
10. The optical assembly of claim 1, wherein the material comprises carbon nanotubes.
11. The optical assembly of claim 1, wherein the material comprises a CVD material.
12. The optical assembly of claim 1, wherein the thickness of the thermally conductive component is less than 500 μm.
13. The optical assembly of claim 1, wherein the material comprises a metal.
14. The optical assembly of claim 13, wherein the material comprises an electroformed material.
15. The optical assembly of claim 1, wherein the material comprises a woven fabric.
16. The optical assembly of claim 1, wherein the material comprises a woven fabric, and the woven fabric comprises a metallic material and/or a carbon compound.
17. The optical assembly of claim 1, wherein the thermally conductive component is connected to the optical element.
18. The optical assembly of claim 1, wherein the thermally conductive component is connected to the optical element over at least one surface area at at least one isolated point.
19. The optical assembly of claim 1, wherein the thermally conductive component is connected to the optical element at a connection having a heat transfer coefficient of less than 1000 W m.sup.−2 K.sup.−1.
20. The optical assembly of claim 1, wherein the thermally conductive component is connected to the optical element via a material having a thermal conductivity of less than 1 W m.sup.−1 K.sup.−1.
21. The optical assembly of claim 1, wherein the thermally conductive component is connected to the optical element via a friction-locked connection.
22. The optical assembly of claim 1, wherein the thermally conductive component is arranged at a distance from the optical element.
23. The optical assembly of claim 1, wherein the thermally conductive component is arranged at a distance from the optical element, and the distance is between 100 μm and 1000 μm.
24. The optical assembly of claim 1, wherein the optical element is selected from the group consisting of a lens, a mirror, a plane-parallel plate and a microstructured element.
25. The optical assembly of claim 1, wherein the optical element comprises a material selected from the group consisting of quartz glass, crystalline quartz, a fluoride crystal, titanium-doped quartz glass, a glass ceramic, and a metal.
26. The optical assembly of claim 1, further comprising a heat source, wherein at least one side of the thermally conductive component is connected to the heat source.
27. The optical assembly of claim 26, wherein the heat source is a component configured so that current flows therethrough.
28. The optical assembly of claim 1, further comprising a heat sink, wherein at least one side of the thermally conductive component is connected to the heat sink.
29. The optical assembly of claim 28, wherein the heat sink is a cooler configured so that a gas or a liquid flows flow therethrough.
30. The optical assembly of claim 1, wherein the optical assembly is configured so that, during use of the optical assembly, at least part of the thermally conductive component is exposed to radiation which the thermally conductive component is configured to absorb.
31. The optical assembly of claim 1, wherein the optical assembly is configured so that, during use of the optical assembly, at least part of the thermally conductive component is exposed an evaporating liquid.
32. The optical assembly of claim 31, wherein the evaporation liquid comprises an immersion fluid.
33. The optical assembly of claim 1, wherein the thermal conductivity of the material is more than 500 W m.sup.−1 K.sup.−1; and the product of a thickness of the thermally conductive component in millimeters and the thermal conductivity of the material is greater than 1 W mm m.sup.−1 K.sup.−1.
34. An optical assembly, comprising: a device configured to position a light-sensitive substrate; and a thermally conductive component mounted on the device, wherein at least one of the following holds: the thermally conductive component comprises a material with a thermal conductivity of more than 500 W m.sup.−1 K.sup.−1; and a product of a thickness of the thermally conductive component in millimeters and the thermal conductivity of the material is greater than 1 W mm m.sup.−1 K.sup.−1.
Description
DRAWING
[0050] Exemplary embodiments are depicted in the schematic drawing and are explained in the following description. In the figures:
[0051]
[0052]
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[0055]
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[0058]
[0059] In the following description of the drawings, identical reference signs are used for identical or functionally identical components.
[0060] In
[0061] A device 14 for holding and manipulating a photomask (not shown) is arranged after the illumination system 12 such that the mask lies in the object plane 15 of the projection lens 13 and is movable in this plane for scanning operation in a traveling direction indicated by an arrow 16.
[0062] Following after the plane 15, which is also referred to as the mask plane, is the projection lens 13, which projects an image of the photomask at a reduced scale, for example at a scale of 4:1 or 5:1 or 10:1, onto a wafer 17 coated with a photoresist layer. The wafer 17 used as a light-sensitive substrate is arranged such that the plane substrate surface 18 with the photoresist layer substantially coincides with the image plane 19 of the projection lens 13. The wafer 17 is held by a device 20, which includes a scanner drive, in order to move the wafer 17 synchronously in relation to the photomask and parallel to it. The device 20 also includes manipulators for moving the wafer both in the z direction parallel to an optical axis 21 of the projection lens 13 and in the x and y directions perpendicular to this axis.
[0063] The projection lens 13 has as a final element adjacent to the image plane 19 an optical element 1 in the form of a plano-convex lens with a conical lens part 3, the end face 4 of which forms the last optical face of the projection lens 13 and is arranged at a working distance above the substrate surface 18. Arranged between the end face 4 and the substrate surface 18 is an immersion fluid 22, in the present case water, to be more precise ultrapure water, which increases the output-side numerical aperture of the projection lens 13. Via the immersion fluid 22, the imaging of structures on the photomask can take place with a higher resolution and depth of field than is possible if the intermediate space between the optical element 1 and the wafer 17 is filled with a medium with a lower refractive index, for example air. The gap that forms the intermediate space is generally between 2 mm and 4 mm.
[0064] In the example shown, the lens element 1 consists of synthetic, amorphous quartz glass (SiO.sub.2) and has a conical lens part 3, on the underside of which the end face 4 of the lens element 1 is formed. The radiation 9 produced by the light source 11 passes in a directed manner through the end face 4 of the lens element 1 that forms or delimits an optically used surface region of the lens element 1. A peripheral lateral surface 5, adjoining the end face 4, of the conical lens part 3 is partially wetted by the immersion fluid 22. The conical, radially inward lens part 3 is adjoined by a radially outward plane lens face 2. The radiation 9 of the light source 11 does not pass in a directed manner through either the lateral surface 5 of the conical lens part 3 or the plane lens face 2, i.e. they are outside the beam path of the used radiation 9.
[0065] It goes without saying that optical elements for immersion lithography do not necessarily have to have the plano-convex geometry described above; however, a conically shaped volume region 3 is typical for such optical elements. The optical element 1 may also consist of some other material that is transparent above a wavelength of 250 nm or 193 nm, for example of crystalline quartz glass (SiO.sub.2), barium fluoride (BaF.sub.2) or germanium dioxide (GeO.sub.2).
[0066] Droplets of the immersion fluid 22 may remain on the surface regions 2, 5 of the lens element 1 that are not immersed or only partially immersed in the immersion fluid 22. When these droplets evaporate, there is locally a cooling down of the quartz glass material of the lens element 1, which leads to a local change in the refractive index and also leads to the lens element 1 being deformed locally as a result of the thermal expansion. Both effects can lead to image errors, and are therefore undesired.
[0067] In order to prevent local cooling down of the lens element 1 by the evaporating immersion fluid 22, or to minimize the local temperature gradients thereby occurring, a thermally conductive component 6 (cf.
[0068]
[0069] For producing a polycrystalline or monocrystalline diamond layer 37 on the carrier body 31, it is desirable that the latter is heated up with the aid of a heating element 35 to a temperature of generally more than about 600° C. to 800° C. Materials from which the carrier body 31 is produced should have an (average) coefficient of thermal expansion that is similar at room temperature (22° C.) and at the temperature at which the coating is applied (here: about 800° C.). If this is the case, the deposited diamond layer 37 has few stresses and there are smaller geometrical changes when the carrier body 31 is removed (see below).
[0070] In the present case, i.e. with coating temperatures of about 800° C. or above, Si or SiO.sub.2 are suitable in particular as materials for the carrier body 31. Si offers the advantage over SiO.sub.2 of a high thermal conductivity, which leads to a uniform temperature distribution during the coating, and consequently to uniform layer properties. Many metals can in principle also be coated well, and consequently are suitable in principle as carrier bodies, but generally have much greater differences in the coefficient of thermal expansion in relation to diamond. In order to perfect further the geometry of the deposited diamond layer 37, a change in form as a result of stresses in the production of the diamond layer 37 may also be calculated and/or measured and provisioned for in the geometry or the form of the surface of the carrier body 31.
[0071] The depositing of the diamond layer 37 is carried out until it has a desired thickness D, which is typically more than 25 μm, advantageously more than 100 μm and generally no more than 500 μm. After the completion of the coating, the carrier body 31 is removed from the coating chamber 32 of the coating apparatus 30, as represented in
[0072] As can be seen in
[0073] In an optional step which then follows, the diamond layer 37 may also be polished and/or microstructured.
[0074] In a step which then follows, the diamond layer 37 is detached from the carrier body 31, for example in that the material of the carrier body 31, for example Si or SiO.sub.2, is dissolved in hydrofluoric acid (HF), whereby a self-supporting component 6 made of diamond or a diamond body with a high thermal conductivity is formed, which is represented in
[0075] The establishing of a connection between the thermally conductive component 6 shown in
[0076]
[0077] In order to keep the heat transfer from the thermally conductive component 6 to the lens element 1 as small as possible, it is advantageous if the adhesive layer 41, and consequently the connection between the component 6 and the lens element 1, has a heat transfer coefficient of less than 1000 W m.sup.−2 K.sup.−1, preferably of less than 100 W m.sup.−2 K.sup.−1. It is also advantageous if the thermally conductive component 6 is connected to the lens element 1 by way of an adhesive 41 that has a thermal conductivity of less than 1 W m.sup.−1 K.sup.−1, preferably of less than 0.1 W m.sup.−1 K.sup.−1. The same also applies to the material of the UV-resistant protective layer 40. As shown in
[0078] As an alternative to establishing a connection by adhesive bonding, the thermally conductive component 6 may also be connected to the lens element 1 in some other way, for example by so-called low-temperature bonding, in which the component 6 and the lens element 1 are heated up to no more than typically about 400° C. in order to produce the connection. An optical connecting or optical contact bonding of the thermally conductive component 6 to the lens element 1 is also possible. When a thermally conductive component 6 of a metal or of a metallic material is used, the connection may also be performed by soldering.
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[0080] The depositing of the copper layer 37 is carried out until it has a desired thickness D (cf.
[0081] After the completion of the coating, the coated carrier body 31 represented in
[0082] As can be seen in
[0083] The thermally conductive component 6 detached from the carrier body 31 has on its radially outward edge a peripheral collar 54, which makes it easier to fasten the thermally conductive component 6 to the optical element 1 from
[0084] The mounting ring 54 forms a clamping connection, which fixes the thermally conductive component 6 in its position in relation to the lens element 1. The thermally conductive component 6 here abuts the lens element 1, i.e. it is not arranged at a distance from the lens element 1. Instead of the clamping connection 54, the thermally conductive component 6 may also be fixed in its position in relation to the lens element 1 via a screwing connection. Typically formed in this case in the thermally conductive component 6 are through-holes for screws, which can be fixed on a mount (not shown in
[0085]
[0086] In the example shown in
[0087] When a thermally conductive component 6 in the form of a woven fabric 56 is used, it may be that the penetration of the immersion fluid 22 into an intermediate space between the thermally conductive component 6 and the lens element 1 cannot be prevented completely. The thermally conductive component 6 allows any inhomogeneities in the temperature that may be caused by cold of evaporation to be distributed over the entire plane lens face 2 and also the lateral surface 5 of the conical lens part 3. Consequently, imaging errors of the lens element 1 can be reduced even when a not completely liquid-impermeable woven fabric 56 is used as the thermally conductive component 6. The thickness D of the thermally conductive component 6 is chosen such that the product of the thickness D and the thermal conductivity λ of the thermally conductive woven fabric 56 is more than 1 W mm m.sup.−1 K.sup.−1, preferably more than 10 W mm m.sup.−1 K.sup.−1, in particular more than 50 W mm m.sup.−1 K.sup.−1. As an alternative or in addition to metallic materials, for example Al, Ag, Cu, Cr, . . . , carbon compounds may also be used for producing the woven fabric 56.
[0088]
[0089] The actuator 42 is used for actuating or moving a mounting element 8 for the further lens element 7. For this purpose, the actuator 42 is passed through at times by current that is delivered by a voltage source 43. The actuator 42 is heated by the current flow and thereby changes its form in order to act on the mounting element 8 and displace the other lens element 7. The heating causes the actuator 42 to give off thermal radiation 44 (IR radiation) to the environment, in the example shown the proportion of the thermal radiation 44 that is incident on the lens element 1 being absorbed by the thermally conductive component 6.
[0090] In the example shown, the material of the thermally conductive component 6 is diamond, which represents a material that is transparent to the thermal radiation 44. To make the thermally conductive component 6 opaque to the thermal radiation, in the example shown in
[0091] The thermal radiation 44 that is taken up or absorbed by the thermally conductive component 6 is transmitted from it to the mounting 8 to which the thermally conductive component 6 is fastened. The mounting element 8 itself, or in the case shown a cooler 46 that is connected to the latter and is flowed through by a cooling medium, for example water, is used for dissipating the heat transmitted to the mounting element 8. It goes without saying that it is only by way of example that the mounting element 8, the thermally conductive component 6 and the actuator 42 are shown in
[0092]
[0093] Another application for a thermally conductive component 6 that has been produced in the way described in connection with
[0094] Via a feeding device 70 and a suction extracting device 71, the immersion fluid 22 is on the one hand fed to the region 72 between the last optical element 1 and the wafer 17 and on the other hand is extracted from it, so that even during the movement of the wafer table 60 the immersion fluid 22 remains restricted to the region 72 between the feeding device 70 and the suction extracting device 71. The suction extracting device 71 generally works with a negative pressure with respect to the environment, so that the immersion fluid 22 can be easily taken up by way of an inlet 73. This allows a continuous (and dynamic) exchange of the immersion fluid 22 to take place, while it remains restricted to the partial region of the substrate surface 18 that is currently being used for the exposure.
[0095] The local wetting in the region 72 offers the advantage that only small amounts of immersion fluid 22 have to be accelerated during the displacement of the wafer table 60. There are thus no undesired turbulences in the immersion fluid 22, and wave formation on account of the inertia of the immersion fluid 22 can be avoided.
[0096] Mounted on the wafer table 60, to be more precise to its upper side 64, in the present example is a thermally conductive component 6 made of diamond, which is in the form of a plate. The fastening of the thermally conductive component 6 to the wafer table 60, which may be formed for example entirely or partially from cordierite or from Zerodur®, may be performed for example in the way described further above in conjunction with
[0097] As an alternative to the use of CVD diamond as a material for the thermally conductive component 6, other materials may also be used, as long as they have the desired high thermal conductivity of more than 500 W m.sup.−1 K.sup.−1 at room temperature, for example carbon nanotubes. It is also possible to use other thermally conductive components 6 in the case of which the product of the thickness D of the thermally conductive component 6 and the thermal conductivity λ of the thermally conductive material has a value greater than 1 W mm m.sup.−1 K.sup.−1, preferably greater than 10 W mm m.sup.−1 K.sup.−1, in particular greater than 50 W mm m.sup.−1 K.sup.−1. If an optical assembly is operated at an operating temperature other than room temperature, for example at very low temperatures of less than about −195° C., there is a broader selection of materials that have the desired high thermal conductivity. At these temperatures, for example, sapphire may also be used as a material for the thermally conductive component.
[0098] Other application areas in which a thermally conductive component that is appropriately adapted in its geometry can be meaningfully used are for example mirrors for EUV lithography, the substrate materials of which, such as for example ULE® or Zerodur®, may likewise be protected via the thermally conductive component 6 from undesired local changes in temperature or from excessive local temperature gradients.