ELECTRICAL STORAGE SYSTEM COMPRISING A SHEET-TYPE DISCRETE ELEMENT, DISCRETE SHEET-TYPE ELEMENT, METHOD FOR THE PRODUCTION THEREOF, AND USE THEREOF
20170263900 · 2017-09-14
Assignee
Inventors
- Miriam KUNZE (Saulheim, DE)
- Ulrich Peuchert (Bodenheim, DE)
- Nikolaus Schultz (Essenheim, DE)
- Thorsten DAMM (Nieder-Olm, DE)
- Clemens Ottermann (Hattersheim, DE)
Cpc classification
C03C3/087
CHEMISTRY; METALLURGY
C03C3/078
CHEMISTRY; METALLURGY
Y02P70/50
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H01M10/0585
ELECTRICITY
Y02E60/10
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
C03C3/083
CHEMISTRY; METALLURGY
H01M10/0436
ELECTRICITY
H01M50/11
ELECTRICITY
H01M10/0525
ELECTRICITY
C23C14/3414
CHEMISTRY; METALLURGY
International classification
C03C3/087
CHEMISTRY; METALLURGY
C03C3/078
CHEMISTRY; METALLURGY
H01M10/0585
ELECTRICITY
C03C3/083
CHEMISTRY; METALLURGY
H01M10/0525
ELECTRICITY
Abstract
An electrical storage system is provided that has a thickness of less than 2 mm, where the system includes at least one sheet-type discrete element, the sheet-type discrete element exhibiting high resistance to an attack of alkali metals or alkali metal ions, in particular lithium, wherein the sheet-type discrete element has a low content of TiO.sub.2, the TiO.sub.2 content preferably being less than 2 wt %, preferably less than 0.5 wt %, and preferably free of TiO.sub.2.
Claims
1. An electrical storage system, comprising: at least one sheet-type discrete element having a thickness of less than 2 mm and being made of glass, wherein the at least one sheet-type discrete element exhibits high resistance to an attack of alkali metals or alkali metal ions, wherein the at least one sheet-type discrete element comprises a compostion comprising a TiO.sub.2 in a content of at most 2 wt % and a compositional range selected from the group consisting of, in wt %: TABLE-US-00030 Component No. 1 No. 2 No. 3 No. 4 SiO.sub.2 58-65 55-75 75-85 50-65 B.sub.2O.sub.3 6-10.5 8-18 0-6 Al.sub.2O.sub.3 14-25 0-15 0.5-4.5 15-20 Li.sub.2O 0-7 0-6 Na.sub.2O 0-15 1.5-5.5 8-15 K.sub.2O 0-14 0-2 0-5 MgO 0-5 0-4 0-5 CaO 0-9 3-12 0-7 BaO 0-8 0-15 SrO 0-8 ZnO 0-2 0-5 0-4 TiO.sub.2 0-2 0-1 ZrO.sub.2 0-4 Total of MgO, 8-18 CaO, SrO, and BaO
2. The electrical storage system as claimed in claim 1, further comprising additional constituents in the form of impurities or of necessary processing-related additives and/or refining agents, with a total of the additional constituents amounting to not more than 2 wt %.
3. The electrical storage system as claimed in claim 1, wherein the compositional range comprises range No. 1 and wherein the BaO content is between 3 wt % and 8 wt %.
4. The electrical storage system as claimed in claim 1, wherein the sheet-type discrete element has an Li.sub.2O content of at least 0.1 wt %.
5. The electrical storage system as claimed in claim 1, wherein the at least one sheet-type discrete element has at least one surface that is inert and/or permeable to a reduced degree and/or impermeable to materials coming into contact with the at least one surface.
6. The electrical storage system as claimed in claim 5, wherein the at least one surface is a barrier layer.
7. The electrical storage system as claimed in claim 6, wherein the barrier layer is a barrier against a diffusion of metals.
8. The electrical storage system as claimed in claim 6, wherein the barrier layer is a barrier against a diffusion of alkali metals.
9. The electrical storage system as claimed in claim 8, wherein the barrier layer is formed by doping or overdoping with at least one alkali metal.
10. The electrical storage system as claimed in claim 5, wherein the barrier layer is a barrier to lithium.
11. The electrical storage system as claimed in claim 1, wherein the the at least one sheet-type discrete element comprises a thickness variation of not more than 25 μm based on wafer or substrate size in a range of >100 mm in diameter.
12. The electrical storage system as claimed in claim 1, wherein the at least one sheet-type discrete element comprises a water vapor transmission rate (WVTR) of <10.sup.−3 g/(m.sup.2.Math.d).
13. The electrical storage system as claimed in claim 1, wherein the at least one sheet-type discrete element has a thickness of not more than 100 μm.
14. The electrical storage system as claimed in claim 1, wherein the at least one sheet-type discrete element has a specific electrical resistance at a temperature of 350° C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10.sup.6 Ohm.Math.cm.
15. The electrical storage system as claimed in claim 1, wherein the at least one sheet-type discrete element comprises a maximum load temperature θ.sub.Max of at least 300° C.
16. The electrical storage system as claimed in claim 1, wherein the at least one sheet-type discrete element has a coefficient of linear thermal expansion a in a range from 2.0*10.sup.−6/K to 10*10.sup.−6/K.
17. The electrical storage system as claimed in claim 1, wherein the at least one sheet-type discrete element further comprises a relationship of a product of a maximum load temperature (θ.sub.Max) and a coefficient of linear thermal expansion (α) of 600.Math.10.sup.−6≦θ.sub.Max.Math.α≦8000.Math.10.sup.−6.
18. The electrical storage system as claimed in claim 1, wherein the at least one sheet-type discrete element further comprises a relationship of a product of a maximum load temperature (θ.sub.Max) and a coefficient of linear thermal expansion (α) of 800.Math.10.sup.−6≦θ.sub.Max.Math.α≦5000.Math.10.sup.−6.
19. A sheet-type discrete element made, comprising: a high resistance to an attack of alkali metals or alkali metal ions; and a composition comprising a TiO.sub.2 content of at most 2 wt % and a compositional range selected from the group consisting of, in wt %: TABLE-US-00031 Component No. 1 No. 2 No. 3 No. 4 SiO.sub.2 58-65 55-75 75-85 50-65 B.sub.2O.sub.3 6-10.5 8-18 0-6 Al.sub.2O.sub.3 14-25 0-15 0.5-4.5 15-20 Li.sub.2O 0-7 0-6 Na.sub.2O 0-15 1.5-5.5 8-15 K.sub.2O 0-14 0-2 0-5 MgO 0-5 0-4 0-5 CaO 0-9 3-12 0-7 BaO 0-8 0-15 SrO 0-8 ZnO 0-2 0-5 0-4 TiO.sub.2 0-2 0-1 ZrO.sub.2 0-4 total of MgO, 8-18 CaO, SrO, and BaO
20. The sheet-type discrete element as claimed in claim 19, further comprising additional constituents in the form of impurities or of necessary processing-related additives and/or refining agents, with a total of the additional constituents amounting to not more than 2 wt %.
21. The sheet-type discrete element as claimed in claim 19, wherein the compositional range comprises range No. 1 and wherein the BaO content is between 3 wt % and 8 wt %.
22. The sheet-type discrete element as claimed in claim 19, wherein the composition has an Li.sub.2O content of at least 0.1 wt %.
23. The sheet-type discrete element as claimed in claim 19, further comprising at least one surface that is inert and/or permeable to a reduced degree and/or impermeable to materials coming into contact with the at least one surface.
24. The sheet-type discrete element as claimed in claim 23, wherein the at least one surface is a barrier layer.
25. The sheet-type discrete element as claimed in claim 24, wherein the barrier layer is a barrier against a diffusion of metals.
26. The sheet-type discrete element as claimed in claim 24, wherein the barrier layer is a barrier against a diffusion of alkali metals.
27. The sheet-type discrete element as claimed in claim 26, wherein the barrier layer is formed by doping or overdoping with at least one alkali metal.
28. The sheet-type discrete element as claimed in claim 19, further comprising a thickness variation of not more than 25 μm based on wafer or substrate sizes in a range of >100 mm in diameter.
29. The sheet-type discrete element as claimed in claim 19, further comprising a thickness of less than 2 mm.
30. The sheet-type discrete element as claimed in claim 19, further comprising a water vapor transmission rate (WVTR) of <10.sup.−3 g/(m.sup.2.Math.d).
31. The sheet-type discrete element as claimed in claim 19, further comprising a specific electrical resistance at a temperature of 350° C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10.sup.6 Ohm.Math.cm.
32. The sheet-type discrete element as claimed in claim 19, further comprising a maximum load temperature θ.sub.Max of at least 300° C.
33. The sheet-type discrete element as claimed in claim 19, further comprising a coefficient of linear thermal expansion a in a range from 2.0*10.sup.−6/K to 10*10.sup.−6/K.
34. The sheet-type discrete element as claimed in claim 19, further comprising a relationship of a product of a maximum load temperature (UMax) and a coefficient of linear thermal expansion (α) of 600.Math.10.sup.−6≦θ.sub.Max.Math.α8000.Math.10.sup.−6.
35. The sheet-type discrete element as claimed in claim 19, wherein the sheet-type discrete element is configured for a use elected from the group consisting of a substrate in an electrical storage system, a superstrate in an electrical storage system, and a cover in an electrical storage system.
36. A method for producing a sheet-type discrete element for use in an electrical storage system, comprising: melting a composition comprising a TiO.sub.2 content of at most 2 wt % and a compositional range selected from the group consisting of, in wt %: TABLE-US-00032 Component No. 1 No. 2 No. 3 No. 4 SiO.sub.2 58-65 55-75 75-85 50-65 B.sub.2O.sub.3 6-10.5 8-18 0-6 Al.sub.2O.sub.3 14-25 0-15 0.5-4.5 15-20 Li.sub.2O 0-7 0-6 Na.sub.2O 0-15 1.5-5.5 8-15 K.sub.2O 0-14 0-2 0-5 MgO 0-5 0-4 0-5 CaO 0-9 3-12 0-7 BaO 0-8 0-15 SrO 0-8 ZnO 0-2 0-5 0-4 TiO.sub.2 0-2 0-1 ZrO.sub.2 0-4 total of MgO, 8-18 CaO, SrO, and BaO and subsequently hot shaping the melted composition.
37. The method as claimed in claim 36, wherein the hot shaping comprises drawing.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
[0150]
[0151] In the context of the present invention, any material which is capable of preventing or greatly reducing the attack of fluids or other corrosive materials on the electrical storage system 1 is considered as an encapsulation or sealing of the electrical storage system 1.
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[0157] In the case of
LIST OF REFERENCE NUMERALS
[0158] 1 Electrical storage system [0159] 2 Sheet-type discrete element used as a substrate [0160] 3 Cathode collector layer [0161] 4 Anode collector layer [0162] 5 Cathode [0163] 6 Electrolyte [0164] 7 Anode [0165] 8 Encapsulation layer [0166] 10 Sheet-type discrete element in the form of a sheet-type shaped body