SAPPHIRE SUBSTRATE RECYCLING METHOD

Abstract

In order to address the high recycling cost, high complexity and other problems encountered by the prior art, the present invention proposes a method for recycling a sapphire substrate, which is applicable to both patterned and smooth sapphire substrates and involves only two steps: high-temperature baking and high-temperature rinsing in a concentrated acid. It entails a simple process which can be completed with high efficiency in a short period by easy operations at significantly reduced cost.

Claims

1. A method for recycling a sapphire substrate, comprising the steps of: high-temperature baking, wherein an intact epitaxial wafer to be scrapped is placed and baked in a baking oven at a high temperature of from 600° C. to 1,400° C., and wherein the epitaxial wafer contains the sapphire substrate; and high-temperature rinsing in a concentrated acid, wherein the baked epitaxial wafer is then rinsed in the concentrated acid having a concentration ranging from 60% to 99% at a high temperature of from 60° C. to 300° C.

2. The method of claim 1, wherein the high-temperature baking is carried out for a period of time from 2 hours to 20 hours.

3. The method of claim 1, wherein the high-temperature baking is carried out in nitrogen or in a nitrogen and hydrogen mixture.

4. The method of claim 1, wherein the high-temperature rinsing is performed at a temperature of 160° C.

5. The method of claim 1, wherein the high-temperature rinsing is performed for a period of time of more than 2 minutes.

6. The method of claim 5, wherein the high-temperature rinsing is performed for a period of time of 10 minutes.

7. The method of claim 1, wherein the concentrated acid is one of hydrochloric acid, sulfuric acid, phosphoric acid and nitric acid, or a mixture thereof.

8. The method of claim 1, wherein the sapphire substrate is a patterned or smooth sapphire substrate.

9. The method of claim 1, wherein the epitaxial wafer is obtained from a physical or a chemical vapor deposition technique or from an atomic layer deposition technique.

10. The method of claim 9, wherein the epitaxial wafer is obtained from a metal organic chemical vapor deposition technique, a hydride vapor phase epitaxy technique or a molecular beam epitaxy technique.

11. The method of claim 1, wherein the epitaxial wafer comprises an epitaxial layer which is a single layer, or a stack of multiple layers, of In.sub.xAlyGa.sub.1-x-yN, where 0≦x, 0≦y, and 0≦x+y≦1.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0023] FIG. 1 is a flowchart graphically showing a method for recycling a sapphire substrate in accordance with the present invention.

[0024] FIG. 2 is a schematic illustration of an intact epitaxial wafer to be scrapped which contains a patterned sapphire substrate (PSS) in accordance with the present invention.

[0025] FIG. 3 is a schematic illustration of an intact epitaxial wafer to be scrapped which contains a smooth sapphire substrate in accordance with the present invention.

[0026] FIG. 4 schematically shows the recycled PSS in accordance with the present invention.

[0027] FIG. 5 schematically shows the recycled smooth sapphire substrate in accordance with the present invention.

[0028] In FIGS. 2 to 5, 10 denotes the PSS; 11, the smooth sapphire substrate; and 20, an epitaxial layer.

DETAILED DESCRIPTION

[0029] A method for recycling a sapphire substrate according to the present invention will be described in greater detail in the following description which presents preferred embodiments of the invention and is to be read in conjunction with the accompanying drawings including the flowchart and schematics. It is to be appreciated that those of skill in the art can make changes in the invention disclosed herein while still obtaining the beneficial results thereof Therefore, the following description shall be construed as being intended to be widely known by those skilled in the art rather than as limiting the invention.

[0030] The present invention will be further described in the following paragraphs by way of examples with reference to the accompanying drawing. Features and advantages of the invention will be more apparent from the following detailed description, and from the appended claims. Note that the accompanying drawings are provided in a very simplified form not necessarily presented to scale, with the only intention of facilitating convenience and clarity in explaining illustrative examples of the invention.

[0031] The present invention is based on a core concept that the method involves only two steps for recycling a sapphire substrate, as shown in FIG. 1.

[0032] In step S11, high-temperature baking is performed, in which an intact epitaxial wafer to be scrapped is placed and baked in a baking oven at a temperature ranging from 600° C. to 1400° C., and the epitaxial wafer contains a sapphire substrate.

[0033] In step S12, high temperature rinsing in a concentrated acid is performed, in which the baked epitaxial wafer is then rinsed in an acidic solution having a high concentration of 60%-99% at a high temperature between 60° C. and 300° C.

[0034] This method entails a simple process which can be completed with high efficiency in a short period by easy operations.

[0035] The method is described below in further detail with reference to FIGS. 2 to 5.

[0036] At first, in step S11, high-temperature baking is carried out, as shown in FIGS. 2 and 3, in which the intact epitaxial wafer 1 or 2 to be scrapped is placed and baked in the baking oven. The epitaxial wafer 1 or 2 may be obtained from a physical or chemical vapor deposition technique or from an atomic layer deposition technique, usually from a metal organic chemical vapor deposition technique, a hydride vapor phase epitaxy technique or a molecular beam epitaxy technique, with the metal organic chemical vapor deposition technique being preferred in the shown embodiment.

[0037] The substrate contained in the epitaxial wafer 1 or 2 is a sapphire substrate. Sapphire substrates are generally categorized into smooth sapphire substrates and patterned sapphire substrates (PSSs). As shown in FIG. 2, the substrate in the epitaxial wafer 1 is a PSS 10. In addition to the PSS 10, the epitaxial wafer 1 also has an epitaxial layer 20. As shown in FIG. 3, the substrate contained in the epitaxial wafer 2 is a smooth sapphire substrate 11. Besides it, the epitaxial wafer 2 further has an epitaxial layer 20. Preferably, the epitaxial layer 20 is a single layer of, or a stack of multiple layers of, In.sub.xAl.sub.yGa.sub.1-x-yN, where 0≦x, 0≦y, 0≦x+y≦1, for example, GaN, InGaN, AlGaN or other commonly used semiconductors, including but not limited to, stacked on the sapphire substrate, a non-doped GaN layer, an n-GaN layer, a light-emitting layer and a p-GaN layer.

[0038] The high-temperature baking may be performed at a temperature in the range from 600° C. to 1,400° C., for example, 800° C., 1,000° C. or 1,200° C. for a period of time from 2 hours to 20 hours, for example, 4 hours, 8 hours, 12 hours or 16 hours in nitrogen which can protect the PSS 10 or smooth sapphire substrate 11 from damages, or in a nitrogen and hydrogen mixture. Since the introduction of hydrogen can facilitate separation of the epitaxial layer 20 from the PSS 10 or smooth sapphire substrate 11, the nitrogen and hydrogen mixture is preferably used in the shown embodiment.

[0039] Following the high-temperature baking, in step S12, high-temperature rinsing is carried out in the concentrated acid. The concentrated acid has a concentration ranging from 60% to 99% and can be implemented as one of hydrochloric acid, sulfuric acid, phosphoric acid and nitric acid, or any mixture thereof, with pure phosphoric acid being preferred in the shown embodiment. The rinsing may be performed at a temperature ranging from 60° C. to 300° C., preferably, for example, 80° C., 160° C. or 240° C., with 160° C. being preferred in the shown embodiment, for a period of time of more than 2 minutes, for example, 4 minutes, 10 minutes, 20 minutes or 30 minutes, with 10 minutes being preferred in the shown embodiment. In other embodiments, the rinsing duration and rinsing temperature may be properly selected so that complete cleaning can be achieved.

[0040] As shown in FIGS. 4 and 5, if the PSS 10 or smooth sapphire substrate 11 recycled from the two steps discussed above can meet the requirements of relevant morphological inspection standards, then it is reusable.

[0041] In summary, the present invention provides a method for recycling a sapphire substrate, comprising only the two steps of: [0042] high-temperature baking, wherein an intact epitaxial wafer to be scrapped is placed and baked in a baking oven at a high temperature, wherein the high temperature is in the range of from 600° C. to 1,400° C., and wherein the epitaxial wafer contains the sapphire substrate; and [0043] high-temperature rinsing in a concentrated acid, wherein the baked epitaxial wafer is then rinsed in the concentrated acid at a high temperature, wherein the concentrated acid comprises a concentration ranging from 60% to 99%; and the high temperature is in the range of from 60° C. to 300° C.

[0044] This method entails a simple process which can be completed with high efficiency in a short period by easy operations at significantly reduced cost.

[0045] Furthermore, the equipment (e.g., the baking oven and rinsing apparatus), gas and concentrated acid required in the method are all those necessary for the fabrication of LED epitaxial wafers and products. Therefore, with this method, manufactures engaged in the fabrication of these items can recycle sapphire substrates without needing any separate equipment, gas or chemical. This can help them further significantly reduce the recycling cost and hence the LED fabrication cost and be more advantageous in competition and development in the market of LED epitaxial wafers and products.

[0046] It is apparent that the foregoing description presents merely preferred embodiments of the present invention and does not limit the scope of the invention in any sense. Those skilled in the art can make various modifications and variations to the invention without departing from the spirit and scope thereof Accordingly, it is intended that the present invention also include these modifications and variations if they come within the scope of the appended claims and their equivalents.