Light Emitting Diode and Fabrication Method Thereof

Abstract

An LED fabrication method includes forming impurity release holes by focusing a laser at the substrate back surface, and forming invisible explosion points by focusing a laser inside the substrate on positions corresponding to the impurity release holes; communicating the impurity release holes with the invisible explosion points to release impurities generated during forming of the invisible explosion points from the substrate through the impurity release holes, thereby avoiding low external quantum efficiency resulting from adherence of impurities to the side wall of the invisible explosion points. By focusing on a position with 10 μm˜40 ˜m inward from the substrate back side, adjusting laser energy and frequency to burn holes inside the substrate to penetrate and expose the substrate back surface, thereby effectively removing by-products, and reducing light absorption by such by-products, light extraction from a side wall of the LED can also be improved and light extraction efficiency is enhanced.

Claims

1. A method for fabricating a light emitting diode (LED), comprising: 1) growing an epitaxial layer and fabricating a plurality of LED units over a substrate; 2) forming a plurality of impurity release holes by focusing a laser at a back surface of the substrate; 3) forming invisible explosion points by focusing a laser inside the substrate at positions corresponding to the impurity release holes; communicating the impurity release holes with the invisible explosion points to release impurities generated during forming of the invisible explosion points from the substrate through the impurity release holes, to thereby improving upon low external quantum efficiency of the LED due to adherence of impurities to a side wall of the invisible explosion points.

2. The method of claim 1, wherein in step 2), a vertical extension line of the impurity release holes facing the epitaxial layer is between adjacent LED units.

3. The method of claim 1, wherein in step 3), the impurity release holes and the invisible explosion points are at a same axis.

4. The method of claim 1, wherein the substrate is any one of a plain sapphire substrate, a patterned sapphire substrate, a Si substrate, a SiC substrate, a GaN substrate, or a glass substrate.

5. The method of claim 1, wherein the substrate back surface has a reflective layer, and the reflective layer is a metal reflective layer, a distributed Bragg reflective layer, or a multi-layer structure composed of a metal reflective layer and a distributed Bragg reflective layer.

6. The method of claim 5, wherein the metal reflective layer is an Al layer, an Ag layer, or an Au layer.

7. A light emitting diode (LED) comprising a substrate, wherein: the LED has a structure fabricated with a method comprising: 1) growing an epitaxial layer and fabricating a plurality of LED units over a substrate; 2) forming a plurality of impurity release holes by focusing a laser at a back surface of the substrate; 3) forming invisible explosion points by focusing a laser inside the substrate at positions corresponding to the impurity release holes; communicating the impurity release holes with the invisible explosion points to release impurities generated during forming of the invisible explosion points from the substrate through the impurity release holes, to thereby improving upon low external quantum efficiency of the LED due to adherence of impurities to a side wall of the invisible explosion points.

8. The LED of claim 7, wherein the structure has a plurality of impurity release holes at the substrate back surface and explosion points inside, in which, the impurity release holes and the invisible explosion points are at a same axis and mutually communicated so that impurities generated during forming of the invisible explosion points are released from the substrate through the impurity release holes.

9. The LED of claim 7, wherein the substrate is any one of a plain sapphire substrate, a patterned sapphire substrate, a Si substrate, a SiC substrate, a GaN substrate, or a glass substrate.

10. The LED of claim 7, wherein a vertical extension line of the impurity release holes facing the epitaxial layer is between adjacent LED units.

11. A method for fabricating a light emitting diode (LED), comprising: (1) providing a substrate; (2) forming an epitaxial laminated layer over the substrate; (3) forming burning holes inside the substrate through invisible laser cutting; (4) fabricating P and N electrodes through photo mask and etching; (5) fabricating a LED chip through grinding and splitting process; wherein: in the invisible laser cutting technology of step (3), by focusing on a position with 10 μm˜40 μm inward from the substrate back side, adjust laser energy to 0.32 W˜0.6 W and frequency at 15 KHz˜40 KHz to burn holes inside the substrate through invisible laser cutting that penetrate and expose the substrate back surface, thereby facilitating removal of by-products including burn marks and debris and reducing light absorption.

12. The method of claim 11, wherein the epitaxial layer comprises an N-GaN layer, a light-emitting layer, and a P-GaN layer.

13. The method of claim 11, wherein the epitaxial layer is provided with cutting channels in a network-like structure.

14. The method of claim 13, wherein the cutting channels comprise a longitudinal cutting channel and a transverse cutting channel.

15. The method of claim 13, wherein burning positions inside the substrate at vertical direction from invisible laser cutting are consistent with the cutting channel positions from up to down.

16. The method of claim 11, wherein spacing of the holes is 8 μm-20 μm.

17. The method of claim 11, wherein the holes are 1 μm-4 μm.

18. The method of claim 11, wherein: the substrate back surface is provided with a distributed Bragg reflective layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The accompanying drawings, which are included to provide a further understanding of the invention and constitute a part of this specification, together with the embodiments, are therefore to be considered in all respects as illustrative and not restrictive. In addition, the drawings are merely illustrative, which are not drawn to scale.

[0026] FIG. 1 is a side view of the LED wafer with formed invisible explosion points of the prior art.

[0027] FIG. 2 is a schematic diagram of a first step of the backside scribing method according to Embodiment 1.

[0028] FIG. 3 is a schematic diagram of a second step of the backside scribing method according to Embodiment 1.

[0029] FIG. 4 is a back view of the substrate of Embodiment 1.

[0030] FIG. 5 is a schematic sectional diagram of a first step of the backside scribing method according to Embodiment 2.

[0031] FIG. 6 is a schematic sectional diagram of a second step of the backside scribing method according to Embodiment 2.

[0032] FIG. 7 is a schematic sectional diagram of a third step of the backside scribing method according to Embodiment 2.

[0033] FIG. 8 is a schematic sectional diagram of a first step of the fabrication process for the GaN-based LED chip according to Embodiment 3.

[0034] FIG. 9 is a schematic sectional diagram of a second step of the fabrication process for the GaN-based LED chip according to Embodiment 3.

[0035] FIG. 10 is a schematic sectional diagram of a third step of the fabrication process for the GaN-based LED chip according to Embodiment 3.

[0036] FIG. 11 is a schematic sectional diagram of a fourth step of the fabrication process for the GaN-based LED chip according to Embodiment 3.

[0037] FIG. 12 is a structural schematic diagram of the GaN-based LED chip of Embodiment 4.

[0038] In the drawings: 10: substrate; 11: invisible explosion points; 12:

[0039] impurity release holes; 20: epitaxial layer; 30: reflective layer; 31: impurity release holes II; 101: patterned sapphire substrate; 102: N-GaN layer; 103: light-emitting layer; 104: P-GaN layer; 105: holes; 106: P electrode; 107: N electrode; 108: distributed Bragg reflective layer; A: transverse cutting channel; B: longitudinal cutting channel.

DETAILED DESCRIPTION

[0040] Various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings and embodiments.

Embodiment 1

[0041] Referring to FIGS. 2-4, a backside scribing method during LED process is provided, comprising: providing a substrate 10, on which, grow an epitaxial layer and fabricate a plurality of LED units 20. The substrate 10 is any one of a plain sapphire substrate, a patterned sapphire substrate, a Si substrate, a SiC substrate, a GaN substrate or a glass substrate. During mass production of LED, a patterned sapphire substrate is preferred; forming a plurality of impurity release holes 12 by focusing a laser at the back surface of the substrate 10; In some embodiments, pore size range of the impurity release holes 12 is 1-6 μm, and the vertical extension line of the impurity release holes 12 facing the epitaxial layer is between adjacent LED units 20; forming invisible explosion points 11 by focusing a laser inside the substrate 10 on locations corresponding to the impurity release holes 12; communicate the impurity release holes 12 with the invisible explosion points 11 to release the impurities generated during forming of the invisible explosion points 11 from the substrate through the impurity release holes 12, which avoids low external quantum efficiency of the LED due to adherence of impurities to the side wall of the invisible explosion points 11; also, as the impurity release holes 11 and the invisible explosion points 12 are at a same axis, in subsequent splitting process of front side of the LED, a plurality of mutually-independent LEDs can be formed by splitting along the vertical line position where the invisible explosion points 12 and the impurity release holes 11 locate.

[0042] In the prior art, some technicians remove the burning impurities adhered to the side wall with blades or other tools, consuming massive manpower; moreover, such tools are likely to damage the surface of the LED epitaxial layer, resulting in poor LED quality and making it unfit for large-scale production. Instead, in the present invention, before formation of the invisible explosion points 11, impurity release holes 12 passing through the back surface of the substrate 10 and communicated with the invisible explosion points 11 are formed at first to directly remove impurities generated from forming of the invisible explosion points 11; with addition of forming impurity release holes 12 during backside scribing, this method reduces the possibility of damaging the LED surfaces and saves human cost; meanwhile, compared with the prior art that only forms invisible explosion points 11 in the substrate 10, the present invention further eliminates abnormalities like inclined cracks of the non-cutting explosion point of the substrate 10 that occur in subsequent splitting process and improves product yield by communicating the invisible explosion points 11 and the impurity release holes 12 at the substrate back surface.

Embodiment 2

[0043] Referring to FIGS. 5-7, the difference between this embodiment and Embodiment 1 is that: at first, deposit a reflective layer 30 at the back surface of the substrate 10, and remove the reflective layer 30 corresponding to gap of LED units 20 to form impurity release holes II 31 inside the reflective layer 30; the reflective layer 30 is a metal reflective layer, a distributed Bragg reflective layer or a multi-layer structure composed of a metal reflective layer and a distributed Bragg reflective layer, wherein, the metal reflective layer is an Al layer, an Ag layer or an Au layer. In this embodiment, a distributed Bragg reflective layer with high reflectivity is preferred; then, form impurity release holes 12 by focusing a laser on the surface of the substrate 10 at corresponding positions of the impurity release holes II 31 and form invisible explosion points 11 via invisible laser cutting; in subsequent splitting process of front side of the LED, a plurality of mutually-independent LED units 20 can be formed by splitting along the vertical line position where the impurity release holes II 31, the impurity release holes 12 and the invisible explosion points 11 locate.

Embodiment 3

[0044] This embodiment provides a fabrication method for GaN LED chip, comprising steps below:

[0045] As shown in FIG. 8, on the patterned sapphire substrate 101, epitaxially grow an N-GaN layer 102, a light-emitting layer 103 and a P-GaN layer 104 in sequence via metal-organic chemical vapor deposition (MOCVD).

[0046] As shown in FIG. 9, take laser scribing along the epitaxial layer surface to form a longitudinal cutting channel B at the direction vertical to the plain edge, and form a transverse cutting channel A at the direction parallel to the plain edge, wherein, cutting channels A and B form a network-like structure.

[0047] As shown in FIG. 10, focus a laser at a position 10 μm˜40 μm inward from the substrate back surface; increase laser energy to 0.32 W˜0.6 W and adjust laser frequency at 15 KHz˜40 KHz; make burning positions inside the substrate at vertical direction from invisible laser cutting consistent with the cutting channel positions from up to down; burn the holes 105 inside the substrate via invisible laser cutting that pass through and expose the substrate back surface, thereby effectively removing by-products like burn marks and debris and reducing light absorption; in this embodiment, the burning holes 105 are sized 1 μm-4 μm at a spacing of 8 μm˜20 μm; as refractive indices of the substrate 101 and burning holes 105 are different, laser burning scratches equivalently roughen the LED chip side to increase light extraction angle, thus increasing axle light and overall light extraction efficiency of the LED chip; also, it effectively cuts manufacturing cost as by-products of invisible laser cutting are effectively removed without subsequent removal by chemical solutions.

[0048] As shown in FIG. 11, fabricate a P electrode 106 on the P-GaN layer 104 and an N electrode 107 on the exposed N-GaN layer 102 through photo mask and etching; and fabricate a LED chip through grinding and splitting process.

[0049] The GaN-based LED chip fabricated according to this embodiment features high luminous efficiency and good quality compared with chips fabricated from conventional process.

Embodiment 4

[0050] As shown in FIG. 12, different from Embodiment 3, the substrate back surface of this embodiment has a distributed Bragg reflective layer 108 to further improve light extraction efficiency of the LED chip. It should be noted that the distributed Bragg reflective layer 108 can be fabricated either before invisible laser cutting inside the substrate or after formation of burning holes inside the substrate via invisible laser cutting.

[0051] All references referred to in the present disclosure are incorporated by reference in their entirety. Although specific embodiments have been described above in detail, the description is merely for purposes of illustration. It should be appreciated, therefore, that many aspects described above are not intended as required or essential elements unless explicitly stated otherwise. Various modifications of, and equivalent acts corresponding to, the disclosed aspects of the exemplary embodiments, in addition to those described above, can be made by a person of ordinary skill in the art, having the benefit of the present disclosure, without departing from the spirit and scope of the disclosure defined in the following claims, the scope of which is to be accorded the broadest interpretation so as to encompass such modifications and equivalent structures.