Substrate treatment apparatus, and method for controlling temperature of heater
09758870 ยท 2017-09-12
Assignee
Inventors
- Sung-Tae Je (Gyeonggi-do, KR)
- Il-Kwang Yang (Gyeonggi-do, KR)
- Jae-Ho Lee (Gyeonggi-do, KR)
- Kyong-Hun Kim (Gyeonggi-do, KR)
- Myung-In Kim (Gyeonggi-do, KR)
- Yang-Sik Shin (Gyeonggi-do, KR)
Cpc classification
C23C16/4412
CHEMISTRY; METALLURGY
C23C16/4585
CHEMISTRY; METALLURGY
C23C16/46
CHEMISTRY; METALLURGY
International classification
F25B29/00
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
C23C16/46
CHEMISTRY; METALLURGY
H01L21/67
ELECTRICITY
Abstract
A substrate processing apparatus includes a main chamber having a process space in which a process with respect to a substrate is performed, a heater disposed in the process space to heat the substrate placed on an upper portion thereof, and a cooling ring around the heater, the cooling ring having a plurality of cooling gas passages spaced apart at a predetermined distance around the heater to allow a refrigerant supplied from the outside to selectively flow therein.
Claims
1. A substrate processing apparatus comprising: a main chamber having a process space in which a process with respect to a substrate is performed; a heater disposed in the process space to heat the substrate placed on an upper portion thereof; a cooling ring disposed around the heater, the cooling ring having a plurality of cooling gas passages spaced apart at a predetermined distance around the heater, and outlet holes respectively connected to the cooling gas passages and opened toward the heater or toward a side wall of the main chamber to allow a refrigerant to flow out therethrough; a guide member disposed in the process space and including cooling gas supply tubes through which the refrigerant is supplied from the outside of the main chamber to each of the cooling gas passages; and a valve connected to each of the cooling gas supply tubes to open or close said each of the cooling gas supply tubes.
2. The substrate processing apparatus of claim 1, wherein the guide member further comprises: a bottom plate connected along a bottom surface of the main chamber; a side plate connected to a side portion of the bottom plate; and a support member protruding to the heater and connected to the side plate to support the cooling ring.
3. The substrate processing apparatus of claim 2, wherein the guide member comprises a protrusion that stands up on an upper portion of the side plate, and the substrate processing apparatus further comprises an exhaust ring having process gas discharge holes connected to an upper portion of the protrusion to discharge a process gas supplied through a showerhead to the outside and refrigerant discharge holes defined at positions corresponding to the outlet holes to discharge the refrigerant to the outside.
4. The substrate processing apparatus of claim 2, wherein the cooling ring comprises upper discharge holes defined above the cooling gas passages to discharge a process gas supplied through the showerhead to the outside.
5. The substrate processing apparatus of claim 1, wherein the cooling gas passages are disposed at an equal angle with respect to a center of the heater.
6. The substrate processing apparatus of claim 1, wherein the cooling ring is spaced apart from the heater.
7. A method for adjusting a temperature of a substrate processing apparatus, the substrate processing apparatus comprising: a main chamber having a process space in which a process with respect to a substrate is performed, a heater disposed in the process space to heat the substrate placed on an upper portion thereof, a cooling ring surrounding the heater from an outside of the heater, the cooling ring having a plurality of cooling gas passages spaced apart at a predetermined distance around the heater, and outlet holes respectively connected to the cooling gas passages and opened toward the heater or toward a side wall of the main chamber to allow a refrigerant to flow out therethrough, a guide member disposed in the process space and including cooling gas supply tubes through which the refrigerant is supplied from the outside to each of the cooling gas passages, and a valve connected to each of the cooling gas supply tubes to open or close said each of the cooling gas supply tubes, the method comprising: determining a high temperature zone of the heater having a temperature greater than a preset temperature according to a temperature distribution in the heater, and adjusting the temperature distribution in the heater by supplying the refrigerant through corresponding cooling gas passages to the high temperature zone with closing remaining cooling gas passages.
8. The method of claim 7, wherein the adjusting the temperature distribution in the heater further comprises discharging the refrigerant toward the heater through the outlet holes opened toward the heater, or toward the side wall of the main chamber through the outlet hole opened toward the side wall of the main chamber.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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BEST MODE FOR CARRYING OUT THE INVENTION
(8) Hereinafter, exemplary embodiments of the present invention will be described in more detail with reference to
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(10) The chamber cover 20 is connected to the opened upper portion of the main chamber 10 to block the inside of the main chamber 10 from the outside, thereby forming a process space 3 in the main chamber 10. A sealing member (not shown) may be disposed between the main chamber 10 and the chamber cover 20 to completely seal the process space 3. A gas supply hole 75 passes through a ceiling wall of the chamber cover 20. Also, a process gas is supplied into the main chamber 10 through a process gas supply tube 77. The process gas supply tube 77 is connected to a process gas storage tank 70 to open or close a valve 79, thereby adjusting an injection amount of process gas.
(11) A showerhead 60 having a plurality of diffusion holes 65 is disposed on a lower end surface of the chamber cover 20.
(12) The showerhead 60 may uniformly supply the process gas onto the substrate W through the plurality of diffusion holes 65 defined at the same height. The process gas may include hydrogen (H.sub.2), nitrogen (N.sub.2), or a predetermined inert gas. In addition, the process gas may include a precursor gas such as silane (SiH.sub.4) or dichlorosilane (SiH.sub.2Cl.sub.2). Also, the process gas may include a dopant gas such as diborane (B.sub.2H.sub.6) or phosphine (PH.sub.3). The showerhead 60 diffuses the process gas supplied through the gas supply hole 75 onto the substrate W so that the process flows onto the substrate W. The process gas supplied through the showerhead 60 may move into an exhaust space after a predetermined process is completed, and then be exhausted through an exhaust passage 13 defined in the other side of the main chamber 10 to communicate with the exhaust space.
(13) A heater 30 is disposed in the process space 3 of the substrate processing apparatus 1. The heater 30 receives current from an external power source (not shown) to generate heat. A seat groove (not shown) on which the substrate W is loaded and seated may be defined in a top surface of the heater 30. The heater 30 has a circular disk shape corresponding to that of the substrate W to uniformly heat the substrate W. Also, the heater 30 may have an area greater than that of the substrate W. A through hole 31 is defined in a central lower portion of the heater. A support shaft 35 is connected to a lower portion of the heater 30 to support the heater 30. The support shaft 35 may be connected to a driving unit (not shown) to rotate together with the heater 30.
(14) Also, the substrate processing apparatus 1 may further include a bellows 38 in an inner space 3 thereof to maintain an internal atmosphere to a vacuum state and block an external atmosphere of the substrate processing apparatus 1 while the substrate W is processed. The bellows 38 may be connected to a side of a lower portion of an upper fixing member 33 disposed in a through hole 31 of the main chamber 10. The bellows 38 may be compressible and extendable and has an annular shape. Also, the bellows 38 is disposed between the upper fixing member 33 and a lower fixing member (not shown) in a state where the bellows 38 surrounds a support shaft 35.
(15) A guide member 80 is disposed along a bottom surface and a side surface of the main chamber 10. The guide member 80 includes a bottom plate 82 disposed on a bottom surface of the main chamber 10, a side plate 84 having a cylindrical shape and disposed along a side surface of the main chamber 10, a support member 86 connected along an inner circumferential surface of the side plate 84 to protrude to the heater 30. A plurality of gas supply tubes 97 are disposed in an inner surface of the guide member 80. The gas supply tubes 97 are connected to connection tubes 95, respectively. The connection tubes 95 may pass through the upper fixing member 33 and inserted into the upper fixing member 33. The connection tubes 95 pass through the upper fixing member 33 to communicate with the gas supply tubes 97 disposed in the bottom plate 82 along a sidewall of the through hole 31. That is, a refrigerant passes through a gas passage 45 of a cooling ring 40 (that will be described later) from a refrigerant storage tank 90 through the connection tubes 95 and the gas supply tubes 97 which are connected to each other.
(16) Recently, as the substrate W is large-scaled in size, the heater 30 also increases in size. Thus, it may be difficult to form uniform temperature distribution on the substrate W. That is, while the substrate W is heated at a preset process temperature, the heater may be broken down or deteriorated in performance. In addition, radiant heat of the heater W may be locally unbalanced. Thus, to solve these problems, the cooling ring 40 may be disposed around the heater W to minimize a temperature change of the substrate W, which occurs due to the local temperature change of the heater W. The cooling ring 40 is disposed on an upper end of the support member 86. The cooling ring 40 may be disposed spaced a predetermined distance from the circumference of the heater W. Preferably, the cooling ring 40 may be spaced apart from the heater 30 by a distance of about 10 mm. Also, the cooling ring 40 may be formed of a refractory material that is well endurable against a high temperature of the heater W. Also, the cooling ring 40 may be coated with Al.sub.2O.sub.3 and Y.sub.2O.sub.3 to reduce a thermal expansion coefficient and increase a heat conduction coefficient.
(17) The cooling ring 40 has a plurality of gas passages 45. Here, the plurality of gas passages 45 are connected to the corresponding gas supply tubes 97, respectively. The gas passages 45 communicate with the gas supply tubes 97 through inlet holes (see reference numeral 43 of
(18) The exhaust ring 50 has process gas discharge holes 53 and refrigerant discharge holes 57, which are respectively defined in upper and lower portions thereof at a preset distance. The process gas dispersed through the showerhead 60 is discharged into an exhaust port through the process gas discharge holes 53 after a predetermined process is performed on the substrate W. The refrigerant supplied into the gas passages 45 of the cooling ring 40 is discharged into the exhaust port 15 through the refrigerant discharge holes 57 defined in positions corresponding to the outlet holes (see reference numeral 47 of
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(21) For example, if the cooling ring 40 having the twenty-four gas passages 45 is provided, the heater 30 may also be partitioned into twenty-four zones. Among the zones, if a valve (not shown) connected to the gas passage 45 that corresponds to a zone H having a relatively high temperature is opened to allow the refrigerant to flow, a portion corresponding to the zone H of the cooling ring 40 may be cooled. Thus, the zone H may be indirectly cooled to uniformly adjust a temperature for each zone.
(22) Although the refrigerant flowing into the gas passages 45 is discharged to the outside of the cooling ring 40 through the outlet hole 47 in the current embodiment, the present invention is not limited thereto. For example, as illustrated in
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(24) Although the present invention is described in detail with reference to the exemplary embodiments, the invention may be embodied in many different forms. Thus, technical idea and scope of claims set forth below are not limited to the preferred embodiments.
(25) Mode for Carrying out the Invention
(26) Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to
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(28) As illustrated in
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(30) As described above, since the cooling ring 40 is disposed around the heater 30, and the refrigerant is selectively supplied into the cooling ring 40 according to a position of the cooling ring 40, a portion of the cooling ring 40 may be cooled. Therefore, a portion of the heater 30 may be cooled to control temperature non-uniformity in the heater 30. Particularly, the refrigerant may be an inner gas. Since the inert gas does not have a direct effect on the process, the temperature non-uniformity in the heater 30 may be controlled during the process to improve process uniformity.
(31) Although the present invention is described in detail with reference to the exemplary embodiments, the invention may be embodied in many different forms. Thus, technical idea and scope of claims set forth below are not limited to the preferred embodiments.
INDUSTRIAL APPLICABILITY
(32) The present invention may be applicable to various semiconductor manufacturing facilities and methods.