Preferably oriented nanotwinned Au film, method of preparing the same, and bonding structure comprising the same

Abstract

The present invention is related to a preferably oriented nanotwinned Au film, a method of preparing the same, and a bonding structure comprising the same. The nanotwinned Au film has a thickness direction. The nanotwinned Au film is stacked along a [220] crystallographic axis orientation in the thickness direction. At least 50% by volume of the nanotwinned Au film is composed of a plurality of nanotwinned Au grains which are adjacent to each other, arranged in a direction perpendicular to the thickness direction, and stacked along a [111] crystallographic axis orientation.

Claims

1. A preferably oriented nanotwinned Au film stacked along a [220] crystallographic axis orientation in a thickness direction of the film; wherein at least 50% by volume of the nanotwinned Au film is composed of a plurality of nanotwinned Au grains which are adjacent to each other, arranged in a direction perpendicular to the thickness direction, and stacked along a [111] crystallographic axis orientation.

2. The preferably oriented nanotwinned Au film of claim 1, wherein the nanotwinned Au film has a thickness of 0.05-1000 μm.

3. The preferably oriented nanotwinned Au film of claim 1, wherein the nanotwinned Au grains have a short axis of 1-200 nm in length.

4. The preferably oriented nanotwinned Au film of claim 1, wherein at least 50% of the area of any cross-section perpendicular to the thickness direction of the nanotwinned Au film is a [220] crystallographic plane.

5. A bonding structure having a preferably oriented nanotwinned Au film, comprising: a first substrate having a first Au film; and a second substrate having a second Au film; wherein at least one of the first Au film and the second Au film is the preferably oriented nanotwinned Au film of claim 1, and the first Au film and the second Au film are connected to each other and have a bonding interface.

6. The bonding structure of claim 5, wherein each of the first Au film and the second Au film has a thickness of 0.05-1000 μm.

7. The bonding structure of claim 5, wherein each of the first substrate and the second substrate is from the group consisting of: a semiconductor chip, a circuit board, a conductive substrate, and a variety of electronic components.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a schematic diagram showing the layout of the plating apparatus in Preparation Example 1 of the present invention.

(2) FIG. 2A is a cross-sectional view of the [220] preferably oriented nanotwinned Au film in Preparation Example 1 of the present invention produced by focused ion beam.

(3) FIG. 2B is a perspective three-dimensional view of the [220] preferably oriented nanotwinned Au film in Preparation Example 1 of the present invention.

(4) FIG. 3A is an enlarged view for the cross-sectional view of the [220] preferably oriented nanotwinned Au film in Preparation Example 1 of the present invention produced by focused ion beam.

(5) FIG. 3B is a top view of FIG. 3A.

(6) FIG. 4 shows the result for the x-ray diffraction analysis of the [220] preferably oriented nanotwinned Au film in Preparation Example 1 of the present invention.

(7) FIG. 5 shows the result for the hardness test of the [220] preferably oriented nanotwinned Au film in Preparation Example 1 of the present invention.

(8) FIG. 6 shows the result for the x-ray diffraction analysis of the [111] preferably oriented nanotwinned Au film in Preparation Example 2 of the present invention.

(9) FIG. 7 shows the result for the x-ray diffraction analysis of the irregularly oriented Au film in Preparation Example 3 of the present invention.

(10) FIG. 8 is an optical microscope image of the Au film bonding structure in Example 1 of the present invention.

(11) FIG. 9 is an optical microscope image of the Au film bonding structure in Example 2 of the present invention.

(12) FIG. 10 is an optical microscope image of the Au film bonding structure in Comparative Example 1 of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

(13) Hereafter, examples will be provided to illustrate the embodiments of the present invention. Other advantages and effects of the invention will become more apparent from the disclosure of the present invention. Other various aspects also may be practiced or applied in the invention, and various modifications and variations can be made without departing from the spirit of the invention based on various concepts and applications.

Preparation Example 1

Preparation of a [220] Preferably Oriented Nanotwinned Au Film

(14) FIG. 1 is a schematic diagram showing the layout of a plating apparatus 100. The plating apparatus 100 included an anode 11 and a cathode 12 immersed in a plating solution 13 and connected to a direct current supply source 15 (KEITHLEY2400). Here, the material of the anode 11 was a platinum substrate or grid while the material of the cathode 12 was a substrate with its surface coated with gold. However, a glass substrate, a quartz substrate, a metal substrate, a plastic substrate, or a printed circuit board with surfaces coated with a metal layer and a seed layer may also be used. The plating solution 13 comprised gold ions (10 g/L) (prepared from gold sulfite), hydrogen chloride (150 mL/L), nitrate (150 mL/L), and double distilled water (700 mL/L).

(15) Next, a DC current with a current density of 0.005 A/cm.sup.2 was applied. A magnet stirrer (not shown) was added therein to agitate the plating solution 13 at a rotational speed of 600 rpm. A nanotwinned Au film was formed from the cathode 12 toward the direction indicated by the arrow. FIG. 2A is a focused ion beam cross-sectional view of the preferably oriented nanotwinned Au film in this Preparation Example. FIG. 2B is a perspective three-dimensional view of the preferably oriented nanotwinned Au film in this Preparation Example. As shown in FIGS. 2A and 2B, the preferably oriented nanotwinned Au film 20 of the present invention comprised a large number of nanotwinned Au grains 21. Referring to FIG. 3A, which is an enlarged view of FIG. 2A, the plurality of the nanotwinned Au grains 31 (e.g., the nanotwinned Au structure composed of a pair of adjacent black line and white line) were adjacent to each other. These nanotwinned Au grains 31 stacked sequentially along the [111] crystallographic plane in the direction 32. Referring to FIG. 3B, which is a top view of FIG. 3A, many nanotwinned Au grains 31 were present in the Au grains. Referring to FIG. 2B, the nanotwinned Au film had a thickness of 7.5 μm, and referring to FIG. 3B, the nanotwinned Au film had a short axis with 80 nm in length.

(16) FIG. 4 shows the result for the x-ray diffraction analysis of the [220] preferably oriented nanotwinned Au film in this Preparation Example. It can be seen from FIG. 4 that most of the Au grains had a [220] crystallographic axis in a preferred orientation (indicated by the “Au (220)” label in FIG. 3A).

(17) FIG. 5 shows the result for the hardness test of the [220] preferably oriented nanotwinned Au film in this Preparation Example. The nano-indentation test had a response rate of 0.05 (1/s) and an indentation depth of 500 nm. It can be seen from FIG. 5 that when the Au film had the nanotwinned Au structure, its hardness can be increased to 1.73 GPa, which is 1.4 times as hard as the common plated Au.

Preparation Example 2

Preparation of a [111] Preferably Oriented Au Film

(18) In this Preparation Example, a [111] preferably oriented Au film was prepared by plating. First, the same plating apparatus and the same plating solution in Preparation Example 1 were used as shown in FIG. 1. Next, at room temperature, a pulse current with a current density of 0.02 A/cm.sup.2 and a T.sub.on(sec)/T.sub.off (sec) of 0.1 s/1.0 s was applied. A magnetic stirrer (not shown) was added therein to agitate the plating solution 13 at a rotational speed of 600 rpm. A preferably [111] oriented Au film was formed from the cathode 12 toward the direction indicated by the arrow.

(19) FIG. 6 shows the result for the x-ray diffraction analysis of the [111] preferably oriented nanotwinned Au film in this Preparation Example. It can be seen from FIG. 6 that most of the Au grains had a [111] crystallographic axis in a preferred orientation (indicated by the “Au (111)” label in FIG. 6).

Preparation Example 3

Preparation of an Irregularly Orientated Au Film

(20) In this Preparation Example, an irregularly oriented Au film was prepared by plating. First, the same plating apparatus and the same plating solution in Preparation Example 1 were used as shown in FIG. 1. Next, the plating solution was heated to 60° C. and a pulse current with a current density of 0.02 A/cm.sup.2 and a T.sub.on(sec)/T.sub.off (sec) of 0.1 s/1.0 s was applied. A magnetic stirrer (not shown) was added therein to agitate the plating solution 13 at a rotational speed of 600 rpm. An irregularly oriented Au film was formed from the cathode 12 toward the direction indicated by the arrow.

(21) FIG. 7 shows the result for the x-ray diffraction analysis of the irregularly oriented Au film in this Preparation Example. It can be seen from FIG. 7 that the grain arrangement of this Au film surface included a variety of orientations (indicated by the “Au (111)”, “Au (200)”, “Au (220)”, “Au (400)”, “Au (311)” and “Au (222)” labels in FIG. 7).

Example 1

(22) First, a first substrate and a second substrate were provided. The method described in Preparation Example 1 was used to form a first Au film and a second Au film on the first substrate and on the second substrate, respectively. Each of the first Au film and the second Au film was a [220] preferably oriented nanotwinned Au film. The first Au film and the second Au film had a thickness of about 7 μm each. Next, the first substrate and the second substrate were placed on the clamps to allow the first Au film and the second Au film to face toward each other. Then, the first substrate and the second substrate were placed in a vacuum furnace at a low vacuum of 10.sup.−3 torr. The furnace was heated to 200° C. and maintained for 1 hour and a pressing force of 0.78 MPa was applied. By using the above steps, a bonding structure having a preferably oriented nanotwinned Au film was obtained. FIG. 8 is an optical microscope image of the Au film bonding structure in this example. This Au film bonding structure comprised: a first substrate 801 having a first Au film 83 and a second substrate 802 having a second Au film 86; wherein the first Au film 83 and the second Au film 86 were connected to each other with a gold bonding interface 87. No large void was observed in the gold bonding interface 87, which indicated a good bonding quality.

Example 2

(23) First, a first substrate and a second substrate were provided. The method described in Preparation Example 1 was used to form a first Au film on the first substrate. The first Au film was a [220] preferably oriented nanotwinned Au film. The method described in Preparation Example 2 was used to form a second Au film on the second substrate. The second Au film was a [111] preferably oriented nanotwinned Au film. The first Au film had a thickness of about 6 μm while the second Au film had a thickness of about 2 μm. Next, the first substrate and the second substrate were placed on the clamps to allow the first Au film and the second Au film to face toward each other. Then, the first substrate and the second substrate were placed in a vacuum furnace at a low vacuum of 10.sup.−3 torr. The furnace was heated to 200° C. and maintained for 1 hour and a pressing force of 0.78 MPa was applied. By using the above steps, a bonding structure having a preferably oriented nanotwinned Au film was obtained. FIG. 9 is an optical microscope image of the Au film bonding structure in this example. This Au film bonding structure comprised: a first substrate 901 having a first Au film 93 and a second substrate 902 having a second Au film 96; wherein the first Au film 93 and the second Au film 96 were connected to each other with a gold bonding interface 97. No large void was observed in the gold bonding interface 97, which indicated a good bonding quality.

Comparative Example 1

(24) First, a first substrate and a second substrate were provided. The method described in Preparation Example 3 was used to form a first Au film and a second Au on the first substrate and on the second substrate, respectively. Each of the first Au film and the second Au film was an irregularly oriented Au film. The first Au film and the second Au film had a thickness of about 4 μm each. Next, the first substrate and the second substrate were placed on the clamps to allow the first Au film and the second Au film to face toward each other. Then, the first substrate and the second substrate were placed in a vacuum furnace at a low vacuum of 10.sup.−3 torr. The furnace was heated to 200° C. and maintained for 1 hour and a pressing force of 0.78 MPa was applied. By using the above steps, a bonding structure of an Au film was obtained. FIG. 10 is an optical microscope image of the Au film bonding structure in this example. This Au film bonding structure comprised: a first substrate 1001 having a first Au film 103 and a second substrate 1002 having a second Au film 106; wherein the first Au film 103 and the second Au film 106 were connected to each other with a gold bonding interface 107. A number of voids 108 were observed in the gold bonding interface 107, which indicated a poor bonding quality. This poor bonding quality may cause problems such as poor mechanical strength and so on.

(25) As apparent from the above Examples and Comparative Example, the [220] preferably oriented nanotwinned Au film of the present invention has good hardness and mechanical property. Good bonding quality could be achieved with the Au films arranged in other orientations at low temperature and at low pressure. Therefore, this [220] preferably oriented nanotwinned Au film of the present invention could be used in the gold accessory industry and the jewelry industry to increase the hardness of gold ornaments. This [220] preferably oriented nanotwinned Au film of the present invention could also be used in the electronics industry to serve as an electrical contact.

(26) The above embodiments are only for the purpose of better describing the present invention and are of exemplary nature. The scope of rights asserted by the present invention is based on the scope of the claims in this application, and is not intended to be limited by the above embodiments.