CERAMIC EMITTER

Abstract

[Objective] To provide a ceramic emitter that exhibits high radiation intensity and excellent wavelength selectivity.

[Solution] A ceramic emitter includes a polycrystalline body that has a garnet structure represented by a compositional formula R.sub.3Al.sub.5O.sub.12 (R: rare-earth element) or R.sub.3Ga.sub.5O.sub.12 (R: rare-earth element) and has pores with a porosity of 20-40%. The pores have a portion where the pores are connected to one another but not linearly continuous, inside the polycrystalline body.

Claims

1. A ceramic emitter comprising a polycrystalline body having a garnet structure represented by a compositional formula R.sub.3Al.sub.5O.sub.12 (R: rare-earth element) or R.sub.3Ga.sub.5O.sub.12 (R: rare-earth element), the polycrystalline body having pores with a porosity of not less than 20% and not more than 40%, wherein the pores includes a portion where the pores are couple to one another but not linearly continuous, inside the polycrystalline body.

2. The ceramic emitter according to claim 1, wherein the polycrystalline body is a sintered polycrystalline body.

3. The ceramic emitter according to claim 1, wherein a cross-section area of the pore of the polycrystalline body is 5 μm.sup.2 or less.

4. The ceramic emitter according to claim 1, wherein the polycrystalline body is formed by a particle with particle size of 5 μm or less.

5. The ceramic emitter according to claim 1, wherein R is Yb in compositional formulas R.sub.3Al.sub.5O.sub.12 (R: rare-earth element) and R.sub.3Ga.sub.5O.sub.12 (R: rare-earth element).

6. The ceramic emitter according to claim 1, wherein R is Er in compositional formulas R.sub.3Al.sub.5O.sub.12 (R: rare-earth element) and R.sub.3Ga.sub.5O.sub.12 (R: rare-earth element).

7. The ceramic emitter according to claim 1, wherein a thickness between a heat supply surface and a radiation surface is 0.8 mm or more.

8. The ceramic emitter according to claim 1, wherein the ceramic emitter is for a thermophotovoltaic device.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0018] FIG. 1 is an exemplary cross-sectional view illustrating a mode of a ceramic emitter representing an example embodiment of the present invention;

[0019] FIG. 2 is an X-ray diffraction (XRD) pattern of the emitter of Example 1 of the present invention;

[0020] FIG. 3 is a scanning electron microscope (SEM) photograph of the surface of the emitter of Example 1 of the present invention;

[0021] FIG. 4 is a SEM photograph of the fractured surface of the emitter of Example 1 of the present invention;

[0022] FIG. 5 is a SEM photograph of the fractured surface of the emitter of Example 1 of the present invention;

[0023] FIG. 6 is a thermal radiation spectrum of the emitter of Example 1 of the present invention;

[0024] FIG. 7 is thermal radiation spectra of emitter of Example 2 and Comparative Example of the present invention;

[0025] FIG. 8 is a thermal radiation spectrum of the emitter of Example 3 of the present invention;

[0026] FIG. 9 is a configuration diagram illustrating a thermophotovoltaic power generation device pertaining to the present invention;

[0027] FIG. 10 is a configuration diagram illustrating a thermophotovoltaic power generation device pertaining to the present invention;

[0028] FIG. 11 is a configuration diagram illustrating a thermophotovoltaic power generation device pertaining to the present invention;

[0029] FIG. 12 is a thermal radiation spectrum of a ceramic emitter of NPL 1; and

[0030] FIG. 13 is a thermal radiation spectrum of emitters of NPL 1.

DESCRIPTION OF EMBODIMENTS

[0031] The following will describe the details of the example embodiment of the present invention.

[0032] The emitter of the present example embodiment is a polycrystalline body formed by a compositional formula represented as R.sub.3Al.sub.5O.sub.12 (R: rare-earth element) or R.sub.3Ga.sub.5O.sub.12 (R: rare-earth element), and the crystal has a garnet structure. It is known that rare-earth aluminum garnet indicates wavelength selectivity in a thermal radiation spectrum. Whereas, in the present example embodiment, the amount of pores in the polycrystalline body and the shapes of the pores are controlled in the above-described rare earth aluminum garnet and rare earth gallium garnet ceramic. Due to this, improved wavelength selectivity in the thermal radiation spectrum (suppressing radiation of unnecessary wavelength) and increased radiation intensity at a peak wavelength are observed.

[0033] The ceramic in which increase in the above characteristics can be observed has a porosity of not less than 20% and not more than 40%. The polycrystalline body is configured by dense polycrystalline parts 2 and pores 1, as illustrated in the exemplary diagram representing a portion of a cross section of the polycrystalline body in FIG. 1. The pores 1 include a portion where the pores are connected to one another but not linearly continuous. There is a drawback that the wavelength selectivity of the thermal radiation spectrum is degraded when the porosity is less than 20%, while the mechanical strength is reduced when the porosity is 40% or more. Further, when the porosity is 40% or more, the pores are linearly connected and the radiation light from the heat source is transmitted therethrough, thus, the effect of improved wavelength selectivity cannot be obtained.

[0034] Further, the method of producing the ceramic emitter of the present example embodiment is not limited. The ceramic emitter can be produced by easy processes based on mixing, pressing, and firing of raw materials, since the production can be done by solid-state reaction using ceramic powder as the raw material.

[0035] While the sizes and shapes of the pores are not limited, the cross-section area of a pore is preferably not more than 5 μm.sup.2 so that the above-described porosity is realized and the pores are not linearly connected. Further, it is considered that the sizes of the pores influence the above-described radiation characteristics. Further, the crystal particle size is not limited, however, it is preferable to be 5 μm or less, so as to realize the above-described porosity and prevent the pores from being linearly connected.

[0036] Further, with the ceramic emitter of the present example embodiment, the selected wavelength of thermal radiation can be varied by a rare-earth element corresponding to R of the above-described compositional formula. However, the radiation spectrum is matched with the sensitivity wavelength of the photoelectric conversion cell so as to adapt the ceramic emitter to thermophotovoltaic devices. Thus, when an Si cell is used as a photovoltaic device, Yb with peak wavelength in the thermal radiation spectrum of at around 1000 nm is preferably used as a rare-earth element. Further, when a GaSb cell is used as a photovoltaic device, Er with peak wavelength in the thermal radiation spetrum of at around 1500 nm is preferably used as a rare-earth element.

[0037] Further, the external shape and size of the emitter of the present example embodiment are not limited. However, from the perspective that the through pores should not be linearly connected and the perspective of mechanical strength, the thickness of the emitter is preferably 0.8 mm or more when the emitter is a plate. Further, the size of the shortest side or the diameter is preferably 0.8 mm or more when the emitter is a rectangular parallelepiped or cylindrical stick shape.

[0038] It is noted that the above-described PTL 2 also has a drawback that the production is difficult due to the complicated structure as the substrate including a porous or perforated material is coated with Yb: YAG. Further, NPL 1 also has a drawback that the production process becomes complicated since the alumina and zirconia fibers need to be produced and the coating is formed by a sol-gel method. Still further, NPL 2 also has a drawback that the production is difficult as materials need to be melted at a temperature as high as 2193 K when synthesizing. However, the present example embodiment is immune to such drawbacks.

EXAMPLES

[0039] The following will describe the details of examples of the present invention.

Example 1

[0040] As materials of a ceramic emitter, Yb.sub.2O.sub.3 and Al.sub.2O.sub.3 powders are used and weighed at a stoichiometric mixture ratio such that the mixture becomes Yb.sub.3Al.sub.5O.sub.12 after synthesizing. Subsequently, the mixture is added with ethanol and wet-mixed in an agate mortar, then calcined for two hours at 1600° C. in the atmosphere, thereby obtaining a garnet crystal of the above-described compositional formula by solid-state reaction. Thereafter, the garnet crystal is grounded in an agate mortar, pressed into a pellet, and fired at 1600° C. for 12 hours, thereby obtaining a polycrystalline sintered body of a disc shape. The pellet size after sintering is 12.8 mm in diameter and 1.1 mm in thickness. The porosity of this sintered body is confirmed as 36% by a density measurement using the Archimedes method. Further, to prevent water from infiltrating the pores, the density measurement is performed after coating the surface of the sintered body with a cellulose resin.

[0041] FIG. 2 illustrates a powder X-ray diffraction (XRD) pattern of the sintered body. From this pattern, the sintered body is confirmed as having a garnet structure of Yb.sub.3Al.sub.5O.sub.12. FIG. 3 illustrates a scanning electron microscope photograph (SEM image) of the surface of this sintered body. It is observed that the sintered body has pores 1 on the surface thereof, and also that the sintered body is a polycrystal formed by Yb.sub.3Al.sub.5O.sub.12 particles 3. Further, FIG. 4 illustrates an SEM image of a fractured surface of the sintered body. Many pores 1 can be confirmed, and also the pores 1 are found to be connected in a complicatedly intricate manner. FIG. 5 illustrates an enlarged SEM image of the fractured surface of the sintered body. It is confirmed that the section of the pore connected portion makes a hole of approximately 2 μm or less in diameter. Further, it is also confirmed that the particle 3 of the sintered body is 5 μm or less in diameter.

[0042] The thermal radiation spectrum is measured by heating one surface of the obtained sintered body disc and inputting a portion of the radiation light from the other side of the disc to an optical spectrum analyzer through a fiber. Heating of the sintered body pellet is performed, in a state where the SiC ceramic plate is pressed against the pellet, by heating SiC with beam irradiation of a halogen lamp from the back side of the pellet-pressing surface of the SiC plate, and then conducting the heat to the sintered body. Further, the temperature measurement of the thermal radiation surface of the pellet is performed in a state where a type K thermocouple is pressed against the pellet while the pellet is fixed. FIG. 6 illustrates a measurement result of a thermal radiation spectrum of the ceramic emitter of Example 1 at 1070° C. The horizontal axis (wavelength) is a wavelength in nm units, while the vertical axis (counts) is a thermal radiation spectrum intensity in W units. For comparison, FIG. 6 also illustrates a thermal radiation spectrum of SiC ceramic at 1107° C. measured by the same optical system as above. It is confirmed that the spectrum of the Yb.sub.3Al.sub.5O.sub.12 sintered body of Example 1 has selectivity with a peak at a wavelength of approximately 1000 nm. Accordingly, it is observed that the radiation of a wavelength of 1200 nm or more that corresponds to a band gap of the Si photovoltaic cell is suppressed. If the ratio of the emissivity at a peak wavelength to the emissivity at a wavelength of 1750 nm is calculated based on these radiation intensity measurements, the ratio becomes 13 or more. Thus, the selectivity that well exceeds the emissivity ratio of 2 or less indicated in the background art can be confirmed. Further, while SiC is known as having a grey body with emissivity of 0.9, it is confirmed that the radiation intensity of the Yb.sub.3Al.sub.5O.sub.12 sintered body at a peak wavelength in Example 1 indicates radiation of higher intensity than SiC.

Example 2

[0043] As materials of a ceramic emitter, Yb.sub.2O.sub.3 and Ga.sub.2O.sub.3 powders are used and mixed in the same way as Example 1, calcined at 1600° C. for 2 hours in the atmosphere, pressed into a pellet, and then fired at 1500° C. for 2 hours to obtain a Yb.sub.3Ga.sub.5O.sub.12 sintered body.

[0044] It is confirmed by powder X-ray diffraction that the sintered body obtained in the same way as Example 1 has a single phase garnet structure. Further, the size of the sintered body is 12.7 mm in diameter and 0.9 mm in thickness. The porosity is 32% by the density measurement.

[0045] The thermal radiation spectra of the sintered body are measured at 957° C. and 1017° C. in the same way as Example 1 and the results are illustrated in FIG. 7. In the same way as Example 1, selective radiation can be confirmed at a wavelength of approximately 1000 nm that matches with the sensitivity wavelength of the Si photovoltaic cell, while radiation of a wavelength of 1200 nm or more is suppressed. It is observed that the wavelength selectivity slightly improves when the radiation temperature is higher, while the wavelength selectivity is sufficiently high even at 957° C. When the ratio of the emissivity at a peak wavelength to the emissivity at a wavelength of 1750 nm in radiation at 1017° C. is calculated in the same way as Example 1, the value is 11 or more, which is a good value. Further, FIG. 7 illustrates a thermal radiation spectrum of SiC at 1107° C. It is observed that the Yb.sub.3Ga.sub.5O.sub.12 sintered body of Example 2 can gain higher radiation intensity around a peak wavelength than SiC, even though the radiation spectrum of the sintered body was obtained at a lower temperature than that of SiC by 90° C.

Example 3

[0046] As materials of a ceramic emitter, Er.sub.2O.sub.3 and Ga.sub.2O.sub.3 powders are used and mixed in the same way as Example 1, calcined at 1600° C. for 2 hours in the atmosphere, pressed into a pellet, and fired at 1500° C. for 2 hours to obtain an Er.sub.3Ga.sub.5O.sub.12 sintered body.

[0047] It is confirmed by powder X-ray diffraction that the sintered body obtained in the same way as Example 1 has a single phase garnet structure. Further, the size of the sintered body is 12.7 mm in diameter and 1.0 mm in thickness. The porosity is 25% by the density measurement.

[0048] The result of measuring a thermal radiation spectrum of the sintered body at 1058° C. in the same way as Example 1 is illustrated in FIG. 8, together with the measurement result of SiC at the same temperature. Selective radiation can be confirmed at a wavelength of approximately 1500 nm that matches with the sensitivity wavelength of a GaSb photovoltaic cell, whose band gap corresponds to the wavelength of 1700 nm. The ratio of the emissivity at a peak wavelength to the emissivity at a wavelength of 1750 nm calculated from this radiation spectrum is 3 or more, which is double or more of the background art. It is also observed that higher radiation intensity than SiC can be obtained at around the peak wavelength.

[0049] It is noted that, while ceramic emitters using Yb and Er for rare-earth element R are described in the above-descried examples 1 to 3, other rare-earth element may be used instead.

Comparative Example 1

[0050] Similar to Example 2, Yb.sub.2O.sub.3 and Ga.sub.2O.sub.3 are mixed, calcined, pressed into a pellet, and fired at 1600° C. for 12 hours to obtain a Yb.sub.3Ga.sub.5O.sub.12 sintered body. It is confirmed by powder X-ray diffraction that the sintered body obtained in the same way as Example 2 has a single phase garnet structure. Further, the size of the sintered body is 11.5 mm in diameter and 0.9 mm in thickness. The porosity is 19% by the density measurement. The thermal radiation spectra of the sintered body at 1112° C. and 967° C. are measured in the same way as Example 2 and the results are illustrated in FIG. 7, together with the results of Example 2. Although there is a difference in measurement temperatures, the wavelength selectivity of the spectra is obviously poorer compared with the spectrum of the sintered body of Example 2. In this Comparative Example with the radiation spectrum at 967° C., the radiation intensity is larger value than the spectrum at 1017° C. in Example 2 at a wavelength exceeding 1200 nm, which corresponds to the band gap of Si. In contrast, it is observed that the intensity at the peak wavelength is significantly smaller than Example 2. Further, in this Comparative Example with the spectrum at 1112° C., while the peak intensity is sufficiently large compared with Example 2, it is clear that the radiation suppression in a wavelength of 1200 nm and more is not sufficient. For the spectrum at 1112° C. in this Comparative Example, calculation of the ratio of the emissivity at a peak wavelength to the emissivity at a wavelength of 1750 nm produces less than 4. This is insufficient compared with the value in Example 2, which is 11 or more.

[0051] As above, the present invention has been described with the above-described example embodiment as a model example. However, the present invention is not limited to the above-described example embodiment. In other words, the present invention can be applied to a variety of modes that can be understood by those skilled in the art within the scope of the present invention.

[0052] This application claims priority based on Japanese Patent Application No. 2014-190274, filed on Sep. 18, 2014, disclosure of which is incorporated herein in its entirety.

REFERENCE SIGNS LIST

[0053] 1 Pore [0054] 2 Dense polycrystalline part [0055] 3 Particle [0056] 4 Emitter [0057] 5 Photoelectric conversion cell [0058] 6 Photonic crystal [0059] 7 Optical filter