SYSTEMS FOR AMPLIFYING A SIGNAL USING A TRANSFORMER MATCHED TRANSISTOR
20170257069 · 2017-09-07
Assignee
Inventors
- Jon Mooney (Dallas, TX, US)
- David D. Heston (Dallas, TX)
- Bryan G. Fast (Garland, TX, US)
- Thomas L. Middlebrook (Rowlett, TX, US)
Cpc classification
H03F2200/255
ELECTRICITY
H03F2200/36
ELECTRICITY
H03F3/189
ELECTRICITY
H03F2200/537
ELECTRICITY
H03F2200/543
ELECTRICITY
H04B1/18
ELECTRICITY
H03F2200/222
ELECTRICITY
International classification
H03F1/56
ELECTRICITY
Abstract
A circuit for amplifying a source signal generated by a signal source having a first impedance includes a transmission line transformer (TLT) having a first, a second, a third, and a fourth port wherein the TLT is coupled to receive the source signal at the first port and configured to output a corresponding impedance matched signal at the second port, the second port is coupled to the third port of the TLT, the circuit also including a TLT load having a first terminal coupled to the fourth port of the TLT and a second terminal coupled to a reference potential. The circuit additionally includes an amplifier device responsive to the impedance matched signal to generate an amplified signal.
Claims
1. A circuit for amplifying a source signal generated by a signal source having a first impedance, said circuit comprising: a transmission line transformer (TLT) having a first, a second, a third, and a fourth port, said TLT coupled to receive the source signal at the first port and configured to output a corresponding impedance matched signal at the second port, wherein the second port of said TLT is coupled to the third port of said TLT; a TLT load including one or more resistors and one or more capacitors, and having a first terminal coupled to the fourth port of said TLT and a second terminal coupled to a reference potential; and an amplifier device responsive to the impedance matched signal to generate an amplified signal, said amplifier device having a second impedance, wherein said TLT matches the first impedance of said signal source with the second impedance of said amplifier device such that the impedance matched signal and the source signal are substantially equal in magnitude.
2. (canceled)
3. The circuit of claim 1 wherein said TLT load further includes one or more inductors.
4. The circuit of claim 1 wherein a first terminal of a first one of the resistors is coupled to the first terminal of said TLT load, a first terminal of a first one of the capacitors is coupled to a second terminal of the first one of the resistors, and a second terminal of the first one of the capacitors is coupled to the second terminal of said TLT load.
5. The circuit of claim 4 further comprising: an inductor having a first terminal and a second terminal, wherein the first terminal of the inductor is coupled to the first terminal of said TLT load, a first terminal of a second one of the capacitors is coupled to the second terminal of the inductor, and a second terminal of the second one of the capacitors is coupled to the second terminal of said TLT load.
6. The circuit of claim 5 wherein at least one of the first and second ones of the capacitors is a metal-insulator-metal (MIM) capacitor.
7. The circuit of claim 1 wherein the reference potential is ground.
8. The circuit of claim 1 wherein said amplifier device includes a transistor having a source terminal, a drain terminal and a gate terminal, wherein said amplifier device is coupled to receive the impedance matched signal at the gate terminal of the transistor and configured to generate the amplified signal at the drain terminal of the transistor.
9. The circuit of claim 8 wherein the transistor is provided as a field-effect transistor (FET).
10. The circuit of claim 8 wherein the source terminal of the transistor is coupled to a reference potential.
11. The circuit of claim 10 wherein the reference potential is ground.
12. The circuit of claim 8 wherein the second impedance is an input impedance of the gate terminal of the transistor.
13. The circuit of claim 1 wherein at least said TLT is provided as part of an impedance match device.
14. The circuit of claim 1 wherein said amplifier device is provided as part of a power amplifier (PA) circuit.
15. The circuit of claim 1 wherein the circuit is integrated into a communications device.
16. A circuit for amplifying a source signal generated by a signal source having a first impedance, said circuit comprising: a transmission line transformer (TLT) having a first, a second, a third, and a fourth port, said TLT coupled to receive the source signal at the first port and configured to output a corresponding impedance matched signal at the first port, wherein the second port of said TLT is coupled to the third port of said TLT; a TLT load including one or more resistors and one or more capacitors, and having a first terminal coupled to the second port of said TLT and a second terminal coupled to a reference potential, wherein a first terminal of a first one of the resistors is coupled to the first terminal of said TLT load, a first terminal of a first one of the capacitors is coupled to a second terminal of the first one of the resistors, and a second terminal of the first one of the capacitors is coupled to the second terminal of said TLT load; a capacitor coupled to the fourth port of said TLT; and an amplifier device responsive to the impedance matched signal to generate an amplified signal, said amplifier device having a second impedance, wherein said TLT matches the first impedance of said signal source with the second impedance of said amplifier device such that the impedance matched signal and the source signal are substantially equal in magnitude.
17. (canceled)
18. The circuit of claim 16 further comprising: an inductor having first and second opposing terminals, wherein the first terminal of the inductor is coupled to the first terminal of said TLT load, a first terminal of a second one of the capacitors is coupled to the second terminal of the inductor, and a second terminal of the second one of the capacitors is coupled to the second terminal of said TLT load.
19. The circuit of claim 16 wherein said amplifier device includes a transistor having a source terminal, a drain terminal and a gate terminal, wherein said amplifier device is coupled to receive the impedance matched signal at the gate terminal of the transistor and configured to generate the amplified signal at the drain terminal of the transistor, wherein the second impedance is an input impedance of the gate terminal of the transistor.
20. A circuit comprising: a transmission line transformer (TLT) having a first, a second, a third, and a fourth port, with the second port coupled to the third port; a TLT load having a first terminal coupled to the fourth port of said TLT and a second terminal coupled to a reference potential, said TLT load comprising a resistor and capacitor coupled in series; and an amplifier device coupled to the second port of said TLT, said amplifier device having an impedance different than an impedance at the first port of said TLT.
21. The circuit of the claim 20 wherein said TLT load further includes an inductor having a first terminal coupled to the resistor and a second terminal coupled to a reference potential.
22. The circuit of claim 20 wherein said amplifier device includes a transistor having a source terminal, a drain terminal and a gate terminal, wherein the gate terminal of the transistor is coupled to the second port of said TLT.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Features and advantages of the concepts, systems, circuits and techniques disclosed herein will be apparent from the following description of the embodiments taken in conjunction with the accompanying drawings in which:
[0014]
[0015]
[0016]
[0017]
[0018]
DETAILED DESCRIPTION
[0019] Referring now to
[0020] Signal source 110, which may be substantially any device that supplies a signal such as a signal generator, a power amplifier, or a cable coupled to a signal generator or power amplifier as a few examples, generates a source signal to be amplified at the output 110a of the signal source 110. The source signal may, for example, be substantially any electrical signal including signals utilized in electronic warfare, radar, jamming, instrumentation (test and measurement) and communication systems as a few examples. In one embodiment, the source signal includes a direct current (DC) bias (e.g., for controlling or driving the amplifier device 140). The signal source 110 has a first impedance (e.g., fifty ohms (50Ω)). The first impedance may, for example, correspond to an output impedance of the signal source 110.
[0021] The TLT 120, which may be provided as a Ruthroff type TLT, for example, has a plurality of ports (here, four ports). A first one of the ports 120a of the TLT 120, which is also sometimes referred to herein as a “first port” 120a, is coupled to output 110a of the signal source 110. First port 120a corresponds to an input port of the TLT 120 in the illustrated embodiment. A second one of the ports 120b of the TLT 120, which is also sometimes referred to herein as a “second port” 120b, is coupled to an input 140a of amplifier device 140. The amplifier device 140 has a second impedance (e.g., one ohm (1Ω)). The second impedance may, for example, correspond to an input impedance of the amplifier device 140. Second port 120b is also coupled to a third one of the ports 120c of the TLT 120, which is sometimes referred to herein as a “third port” 120c. Second port 120b corresponds to an output port of the TLT 120 in the illustrated embodiment. Additionally, a fourth one of the ports 120d of the TLT 120, which is also sometimes referred to herein as a “fourth port” 120d (e.g., a “shunt” leg or port), is coupled to a first terminal of the TLT load 130 (e.g., an electrical load).
[0022] The TLT load 130, which may include one or more resistors, one or more capacitors, and/or one or more inductors, as will be discussed in further detail in conjunction with
[0023] The TLT 120 is coupled to receive the source signal generated by the signal source 110 at the first port 120a and, in response thereto, TLT 120 provides a corresponding impedance matched signal at the second port 120b. In providing the impedance matched signal, the TLT 120 attempts to match the first impedance of the signal source 110 with the second impedance of the amplifier device 140 such that the impedance matched signal and the source signal are substantially equal in magnitude. Such may, for example, provide for efficient transfer of the signals (i.e., source signals) from signal source 110 to amplifier device 140, and an increased bandwidth of amplifier device 140. In one embodiment, the impedance matched signal is substantially the same as the source signal except for any loss associated with the transfer of the source signal from output 110a of signal source 110 to second port 120b of TLT 120 through TLT 120. The TLT 120 may also match the first impedance of the signal source 110 with the second impedance of the amplifier device 140 to a predetermined characteristic impedance (e.g., a characteristic impedance of about fifty ohms (50 Ωs)). Operation of TLTs (e.g., 120) is known in the art and, therefore, is not described in detail herein.
[0024] The amplifier device 140, which may include or be provided as an output transistor of the system of
[0025] In one embodiment, the TLT 120 and the TLT load 130 are each provided as part of an impedance matching device or network used to match the first impedance of the signal source 110 with the second impedance of the amplifier device 140. In particular, the TLT 120 in combination with the TLT load 130 may be used to match the first impedance of the signal source 110 with the second impedance of the amplifier device 140 to deliver maximum power from the signal source 110 to the amplifier device 140, and improve bandwidth of amplifier device 140 (and the system including the amplifier device 140). The TLT 120 and the TLT load 130 may, for example, extend the bandwidth of the impedance transformation of the impedance matched signal provided by the TLT 120 in comparison to known impedance matching networks (e.g., impedance matching networks utilizing shunt capacitors).
[0026] Additionally, in one embodiment, at least one of the TLT 120, TLT load 130, and amplifier device 140 is provided as part of an amplifier circuit 100 (e.g., a power amplifier (PA) circuit). The amplifier circuit 100 is not properly a part of the system in the illustrated embodiment and is thus shown in phantom.
[0027] Further, in one embodiment, one or more of the circuit elements of
[0028] Additional aspects of the concepts, systems, circuits and techniques sought to be protected herein, with particular emphasis on the impedance matching provided by TLTs (e.g., 120) in combination with TLT loads (e.g., 130), are described in conjunction with the figures below.
[0029] Referring now to
[0030] The TLT 220, which may be the same as or similar to TLT 120 of
[0031] The TLT 220 is coupled to receive a source signal generated by the signal source 110 at the first port 220a and, in response thereto, TLT 220 provides a corresponding impedance matched signal at the second port 220b. Similar to TLT 120 of
[0032] The amplifier device 240, which may be the same as or similar to amplifier device 140 of
[0033] The signal receiver 150 is coupled to receive the amplified signal from second terminal 242b (and output terminal 240b) at input 150a of signal receiver 150. As described above in conjunction with
[0034] In one embodiment, the transistor 242 is provided as a field-effect transistor (FET) having a gate terminal, a source terminal and a drain terminal. The gate terminal may correspond to the first terminal 242a of the transistor 242, the source terminal may correspond to the second terminal 242b of the transistor 242, and the drain terminal may correspond to the third terminal 242c of the transistor 242. In this embodiment, the second impedance of the amplifier device 240 may correspond to an input impedance of the gate terminal of the FET. The transistor 242 may also be provided as a bipolar junction transistor (BJT) having a base terminal, an emitter terminal and a collector terminal. The base terminal may correspond to the first terminal 242a of the transistor 242, the emitter terminal may correspond to the second terminal 242b of the transistor 242, and the collector terminal may correspond to the third terminal 242c of the transistor 242. In this embodiment, the second impedance of the amplifier device 240 may correspond to an input impedance of the base terminal of the BJT.
[0035] In one embodiment, the TLT 220 and the TLT load 130 are each provided as part of an impedance matching device or network 260. As a result of the impedance matching performed by the impedance matching circuit 260, the impedance matched signal arrives at first terminal 242a of transistor 242 with minimal signal loss. Additionally, the bandwidth of transistor 242 is increased over known amplifiers that utilize a shunt capacitor as an impedance matching device directly on an input of the amplifier (e.g., first terminal 242a of transistor 242). Further, in one embodiment, TLT 220, TLT load 130 and amplifier device 240 are each provided as part of an amplifier circuit (e.g., a power amplifier (PA) circuit) 200. In such embodiment, the transistor 242 may be provided as an output transistor of the amplifier circuit 200.
[0036] Additionally, in one embodiment, the system of
[0037] In one aspect of the disclosure herein, by providing the TLT 220 (or alternatively the TLT load 130 of
[0038] Referring now to
[0039] The resistor 332 and the capacitor 334 may have resistance and capacitance values, respectively, which are selected at least in part based on impedances of the signal source (e.g., 110) and the amplifier device (e.g., 240) to which the TLT (e.g., 220) and the TLT load 330 are coupled (e.g., to improve bandwidth and stability of the system in which the signal source and the amplifier device are provided). In one embodiment, the resistor 332 has a resistance of about five ohms (5Ω) and the capacitor 334 has a capacitance of about five picofarad (5 pF). Additionally, in one embodiment, at least one of the resistor 332 and the capacitor 334 is provided as a so-called “off-chip” resistor or capacitor, respectively (e.g., to provide for increased performance of the system in which the signal source, the TLT and the amplifier device are provided). Further, in one embodiment, the capacitor 334 may have substantially any capacitance which is sufficient to provide a substantially “low” radio-frequency (RF) impedance, and the capacitance may depend on a frequency of a source signal which is received by the TLT to which the TLT load 330 is coupled.
[0040] The above-described TLT load 330 may, for example, extend the bandwidth of the impedance transformation of the impedance matched signal provided by the TLT to which the TLT load 330 is coupled.
[0041] It should, of course, be appreciated that the TLT load 330 shown in
[0042] Referring now to
[0043] Inductor 336 has a first terminal coupled to the first terminal of the resistor 332, and a second terminal coupled to a first terminal of the capacitor 338. The capacitor 338, which may be the same as or similar to capacitor 334 in some embodiments, has a second terminal coupled to a reference potential. In one embodiment, the reference potential is the same as the reference potential to which the second terminal of the TLT load 1330 is coupled.
[0044] Similar to resistor 332 and capacitor 334 of TLT load 330, the resistor 332, the capacitor 334, the inductor 336, and the resistor 338 of TLT load 1330 may have resistance, capacitance and inductance values, respectively, which are selected at least in part based on impedances of the signal source (e.g., 110) and the amplifier device (e.g., 240) to which the TLT (e.g., 220) and the TLT load 1330 are coupled. In one embodiment, resistor 332 has a resistance of about five ohms (5Ω), capacitor 334 and capacitor 338 each have a capacitance of about five picofarad (5 pF), and inductor 336 has an inductance of about zero-point-two nanoHenry (0.2 nH). Additionally, in one embodiment, capacitor 334 has a different capacitance from capacitor 338. In such embodiment, at least one of capacitor 334 and capacitor 338 may, for example, be used to adjust the frequencies which the TLT load 1330 passes (i.e., adjust the bandwidth of the TLT load 1330).
[0045] Although TLT load 1330 is provided as a second order resistor-inductor-capacitor (RLC) circuit or network in the illustrated embodiment, and TLT load 330 is provided as a first order resistor-capacitor (RC) circuit or network in the embodiment of
[0046] Further, the number, arrangement (e.g., series or parallel), and values (e.g., resistance, capacitance and inductance values) of the elements (e.g., resistors, capacitors, and inductors) of the TLT loads (e.g., 330) may be selected in an embodiment depending upon whether the source signal received by the TLT to which the TLT loads are coupled includes a DC bias or if a DC bias is being supplied from other circuitry in the system in which the TLT and the TLT loads are provided.
[0047] Referring now to
[0048] TLT 220 is coupled to receive a source signal generated by the signal source 110 at first port 220a and, in response thereto, TLT 220 provides an impedance matched signal at the first port 220a. Similar to TLT 220 of
[0049] In the illustrated embodiment, TLT 220 is in a so-called “shunt orientation” relative to the transistor 242, and the thru portion of TLT 220 (here, the signal path between first port 220a and second port 220b) is “loaded” with the TLT load 130 (i.e., the TLT load 130 is in a shunt orientation relative to the transistor 242). Both the system of
[0050] Having described preferred embodiments, which serve to illustrate various concepts, structures and techniques, which are the subject of this disclosure, it will now become apparent to those of ordinary skill in the art that other embodiments incorporating these concepts, structures and techniques may be used. Additionally, elements of different embodiments described herein may be combined to form other embodiments not specifically set forth above.
[0051] For example, while circuits including transmission line transformers (TLTs) which are the same as or similar to each other are described in several examples below, such are discussed to promote simplicity, clarity and understanding in the drawings as well as in the written description of the teachings herein and is not intended to be, and should not be construed, as limiting. The teachings herein may, of course, be implemented using TLTs which are different from each other.
[0052] Additionally, while TLT loads (e.g., electrical loads) including a select number of resistors (e.g., one resistor), capacitors (e.g., one capacitor), and/or inductors (e.g., one inductor) are described in several examples below, the select number of resistors, capacitors and/or inductors are discussed to promote simplicity, clarity and understanding in the drawings as well as in the written description of the teachings herein and is not intended to be, and should not be construed, as limiting. The teachings disclosed herein may, of course, be implemented using more than or less than the select number of resistors, capacitors and/or inductors.
[0053] Accordingly, it is submitted that that scope of the disclosure should not be limited to the described embodiments but rather should be limited only by the spirit and scope of the following claims.