APPARATUS OF OXIDATION-COMBUSTING AN INGOT GROWER AND METHOD THEREOF
20220235485 · 2022-07-28
Inventors
Cpc classification
C30B15/04
CHEMISTRY; METALLURGY
B01D2273/30
PERFORMING OPERATIONS; TRANSPORTING
C30B15/00
CHEMISTRY; METALLURGY
B01D2273/10
PERFORMING OPERATIONS; TRANSPORTING
International classification
C30B15/04
CHEMISTRY; METALLURGY
B01D46/48
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A method of oxidation-combusting an ingot grower comprises a) blocking between the filter housing and the exhaust pipe, b) forming the filter housing in a vacuum state, and c) injecting air into the filter housing through an injection pipe connected to a first side of the filter housing to combust the filter housing.
Claims
1. A method of oxidation-combusting an ingot grower comprising a chamber, an exhaust pipe connected to the chamber, and a filter housing connected to the exhaust pipe, the method comprising: a) blocking between the filter housing and the exhaust pipe; b) forming the filter housing in a vacuum state; and c) injecting air into the filter housing through an injection pipe connected to a first side of the filter housing to combust the filter housing.
2. The method of claim 1, wherein the filter housing is formed in a vacuum state by a main pump connected to a second side of the filter housing.
3. The method of claim 1, further comprising: repeating the steps b) and c)
4. The method of claim 3, further comprising: measuring the temperature of the filter housing; and forming a circulation structure in which the air flows to the injection pipe, the filter housing, and the exhaust pipe connected to a third side of the filter housing when the measured temperature of the filter housing is greater than a predetermined temperature.
5. The method of claim 4, wherein the air is introduced into the discharge pipe through the injection pipe and the filter housing by a second vacuum pump installed on a fourth side of the filter housing.
6. The method of claim 4, further comprising: blocking between each of the injection pipe and the discharge pipe and the filter housing and connecting the filter housing to the exhaust pipe when the measured temperature of the filter housing is less than or equal to a predetermined temperature.
7. The method of claim 1, further comprising: combusting the chamber and the exhaust pipe by introducing the air into the chamber and the exhaust pipe.
8. The method of claim 7, wherein the air is introduced into the exhaust pipe via the chamber by a first vacuum pump installed on one side of the exhaust pipe.
9. A apparatus of oxidation-combusting an ingot grower, the apparatus comprises: a chamber; an exhaust pipe connected to the chamber; a filter housing connected to the exhaust pipe; an injection pipe connected to a first side of the filter housing; and a controller, wherein the controller is configured to: block between the filter housing and the exhaust pipe and forming the filter housing in a vacuum state, and inject air into the filter housing through the injection pipe to combust the filter housing.
10. The apparatus of claim 9, further comprises: a main pump connected to a second side of the filter housing, wherein the filter housing is formed in a vacuum state by the main pump.
11. The apparatus of claim 9, wherein the controller is configured to repeatedly perform the process of forming the vacuum state and the process of combusting the filter housing
12. The apparatus of claim 11, further comprises: a discharge pipe connected to a third side of the filter housing; and at least one temperature sensor installed at a point far from the injection pipe to measure the temperature of the filter housing.
13. The apparatus of claim 12, wherein the controller is configured to form a circulation structure in which the air flows to the injection pipe, the filter housing and the discharge pipe when the measured temperature of the filter housing is greater than a predetermined temperature.
14. The apparatus of claim 13, further comprises: a second vacuum pump installed on a fourth side of the filter housing, wherein the air is introduced into the discharge pipe through the injection pipe and the filter housing by the second vacuum pump.
15. The apparatus of claim 13, wherein the controller is configured to block between each of the injection pipe and the discharge pipe and the filter housing, and connect the filter housing to the exhaust pipe when the measured temperature of the filter housing is less than or equal to a predetermined temperature.
16. The apparatus of claim 9, wherein the controller is configured to inject the air into the chamber and the exhaust pipe to combust the chamber and the exhaust pipe.
17. The apparatus of claim 16, further comprises: a first vacuum pump installed on one side of the exhaust pipe, wherein the air is introduced into the exhaust pipe through the chamber by the first vacuum pump.
Description
BRIEF DESCRIPTION OF THE DRAWING
[0025]
[0026]
[0027]
[0028]
[0029]
[0030]
[0031]
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0032] Hereinafter, exemplary embodiments disclosed in the present specification will be described in detail with reference to the accompanying drawings, but identical or similar elements are denoted by the same reference numerals regardless of reference numerals, and redundant descriptions thereof will be omitted. The suffixes ‘module’ and ‘unit’ for constituent elements used in the following description are given or used interchangeably in consideration of the ease of preparation of the specification, and do not have themselves distinct meanings or roles. In addition, the accompanying drawings are for easy understanding of the embodiments disclosed in the present specification, and the technical spirit disclosed in the present specification is not limited by the accompanying drawings. Also, when an element such as a layer, region or substrate is referred to as being ‘on’ another elements, these include those that may exist directly on another element or may have other intermediate elements between them.
[0033] [Oxidation Combustion Apparatus]
[0034]
[0035] Referring to
[0036] The chamber 110 is a member for growing a single crystal ingot which becomes a material for a wafer, which is a substrate of a semiconductor chip or a solar cell. During the growth of the single crystal ingot, the inside of the chamber 110 may be maintained in a vacuum state so that external foreign substances, etc. are not introduced into the single crystal ingot.
[0037] The chamber 110 may be connected to the main pump 180 through the exhaust pipe 120. Air in the chamber 110 may be discharged by driving the main pump 180 so that the interior of the chamber 110 may be maintained in a vacuum state. Although not shown, an air injection pipe may be connected to one side of the exhaust pipe 120. Air is introduced into the chamber 110 through the air injection pipe and the exhaust pipe 120 so that the vacuum inside the chamber 110 may be released. Accordingly, when the vacuum of the chamber 110 is formed, the main pump 180 is driven, and when the vacuum of the chamber 110 is released, air may be injected into the air injection tube.
[0038] The filter housing 130 is positioned between the main pump 180 and the exhaust pipe 120 to filter foreign substances supplied from the chamber 110 through the exhaust pipe 120.
[0039] The injection pipe 140 is connected to a first side of the filter housing 130 to inject air in the atmosphere into the filter housing 130. The discharge pipe 150 may connect the second vacuum pump 182 and a second side of the filter housing 130 to discharge air in the filter housing 130 to the outside. For example, a circulation structure through which air flows into the injection pipe 140, the filter housing 130, and the discharge pipe 150 is formed by the injection pipe 140, the filter housing 130, and the discharge pipe 150 so that a temperature of the filter housing 130 can be forcibly lowered.
[0040] Meanwhile, the apparatus of oxidation-combusting the ingot grower according to the embodiment may include a plurality of valves 191 to 195.
[0041] The filter housing 130 may be connected to the exhaust pipe 120 through the first connection pipe 184. For example, the first valve 191 may be installed in the first connection pipe 184 to connect or block the filter housing 130 and the exhaust period.
[0042] The main pump 180 may be connected to the filter housing 130 through the second connection pipe 185. For example, the second valve 192 may be installed in the second connection pipe 185 to connect or block the main pump 180 and the filter housing 130.
[0043] The third valve 193 may be installed in the injection pipe 140 to inject air in the atmosphere into the filter housing 130 or block it.
[0044] The fourth valve 194 may be installed in the discharge pipe 150 to discharge the air inside the filter housing 130 to the outside or block it.
[0045] The first vacuum pump 181 is installed on one side of the exhaust pipe 120 to discharge air introduced into the chamber 110 to the outside through the exhaust pipe 120.
[0046] The fifth valve 195 is installed between the exhaust pipe 120 and the first vacuum pump 181 to discharge the air of the exhaust pipe 120 to the outside or block it. Although not shown, the exhaust pipe 120 and the first vacuum pump 181 may be connected by a connection pipe, and a fifth valve 195 may be installed in the corresponding exhaust pipe 120.
[0047] Meanwhile, while the single crystal ingot is growing, a dopant such as red phosphorus is vaporized and deposited on the inner surfaces of the chamber 110, the exhaust pipe 120, and the filter housing 130 to form deposits. These deposits flow into the single crystal ingot and cause defects in the wafer produced from the single crystal ingot, and thus need to be removed.
[0048] The embodiment can be largely divided into a process of oxidizing combustion of the chamber 110 and the exhaust pipe 120 and a process of oxidizing combustion of the filter housing 130.
[0049] As shown in
[0050] In addition, a single crystal ingot may be grown in the chamber 110 in the first period T1.
[0051] Accordingly, after the single crystal ingot is grown in the first period T1, the chamber 110, the exhaust pipe 120, and the filter housing 130 may be oxidation-combusted during the second to sixth periods T2 to T6. That is, the first to sixth periods T1 to T6 constitute one cycle, and the chamber 110, the exhaust pipe 120, and the filter housing 130 may be oxidation-combusted every cycle, but this is not limited thereto. For example, the oxidation combustion process of the chamber 110, the exhaust pipe 120, and the filter housing 130 may be performed between the growth processes of each of the single crystal ingot.
[0052] According to the embodiment, after the chamber 110 and the exhaust pipe 120 are oxidation-combusted, the filter housing 130 is oxidation-combusted, but this is not limited thereto. For example, the filter housing 130 together with the chamber 110 and the exhaust pipe 120 may be oxidation-combusted at the same time, or after the filter housing 130 is oxidation-combusted, the chamber 110 and the exhaust pipe 120 may be oxidation-combusted.
[0053] The controller 160 may generally manage and/or control the ingot grower according to the embodiment. For example, the controller 160 may control the temperature and pressure of the chamber 110 and may control the vacuum state of the chamber 110.
[0054] For example, the controller 160 may oxidation-combust the chamber 110, the exhaust pipe 120, and the filter housing 130 by controlling the first to fifth valves 191 to 195. For example, the controller 160 may control a single crystal ingot to grow it in the chamber 110. For example, the controller 160 may control the chamber 110, the exhaust pipe 120, and the filter housing 130 to be oxidation-combusted in order to remove deposits produced by the growth of the single crystal ingot. Specifically, the controller 160 blocks between the filter housing 130 and the exhaust pipe 120, forms the filter housing 130 in a vacuum state, and injects air into the filter housing 130 through the injection pipe 140 to combust the filter housing 130. Air can be contained in the atmosphere.
[0055] Meanwhile, the apparatus of oxidation-combusting the ingot grower according to the embodiment may include at least one temperature sensor 170.
[0056] The temperature sensor 170 may be installed on one side of the filter housing 130 to measure the temperature of the filter housing 130. For example, the temperature sensor 170 may be installed at a point far from the injection pipe 140. Air in the atmosphere is injected into the filter housing 130 through the injection pipe 140 so that the deposits may be combusted by an oxidation reaction with the deposits of the filter housing 130. Combustion may be performed along the traveling direction of the air injected from the injection pipe 140. In the filter housing 130, a region adjacent to the injection pipe 140 may be combusted first, and a region far from the injection pipe 140 may be combusted later. When the combustion is complete, the deposits are removed and there are no more deposits to be combusted so that the temperature may decrease in the region of the filter housing 130 in which combustion is completed.
[0057] For example, when the injection pipe 140 is installed on the upper side of the filter housing 130, combustion may be performed first from the upper side of the filter housing 130 and then the combustion may proceed to the lower side of the filter housing 130. Accordingly, the temperature may be higher at the lower side of the filter housing 130 than at the upper side of the filter housing 130.
[0058] When the temperature measured from the lower side of the filter housing 130 is less than or equal to a predetermined temperature, it may be determined that combustion is completed not only at the upper side but also at the lower side of the filter housing 130. Accordingly, when the injection pipe 140 is installed on the upper side of the filter housing 130, the temperature sensor 170 may be installed on the lower side of the filter housing 130. For example, each of the at least one temperature sensor 170 may be installed in at least one region of the lower side of the filter housing 130. For example, each of the at least one temperature sensor 170 may be installed on a lower side of the filter housing 130 and/or a side region of a lower side of the filter housing 130. The temperature sensor 170 may be exposed inside the filter housing 130, but is not limited thereto.
[0059] Accordingly, the temperature sensor 170 may continuously measure the temperature of the filter housing 130 while the filter housing 130 is oxidation-combusted.
[0060] The controller 160 may continuously combust the filter housing 130 until the temperature measured by the temperature sensor 170 falls below a predetermined temperature.
[0061] [Oxidation-Combustion Method]
[0062]
[0063] As shown in
[0064] After each of the first and second valves 191 and 192 is operated in the ON state and the third to fifth valves 193 to 195 are operated in the OFF state, the main pump 180 is operated to operate the chamber 110 to form a vacuum state. In such a vacuum state, a single crystal ingot can be grown.
[0065] While the single crystal ingot is grown in the first period T1, a dopant such as red phosphorus is vaporized and deposited on the inner surfaces of the chamber 110, the exhaust pipe 120, and the filter housing 130 to form deposits.
[0066] Referring to
[0067]
[0068] To this end, the controller 160 may operate each of the first to fourth valves 191 to 194 in an OFF state and may operate the fifth valve 195 in an ON state. Accordingly, an air circulation structure including the chamber 110, the exhaust pipe 120, and the first vacuum pump 181 may be formed.
[0069] Thereafter, as shown in
[0070] The second period T2 may be set in consideration of a time when the deposits of the chamber 110 and the exhaust pipe 120 are completely combusted. Accordingly, since both the deposits of the chamber 110 and the exhaust pipe 120 are combusted by the second period T2, the oxidation combustion of the chamber 110 and the exhaust pipe 120 may be completed.
[0071] Referring to
[0072]
[0073] The third period T3 may be set in consideration of a time for reaching a predetermined pressure.
[0074] Thereafter, as shown in
[0075] Referring to
[0076] As shown
[0077] As shown in
[0078] In
[0079] Referring to
[0080] As shown in
[0081] Referring to
[0082] As shown in
[0083] As shown in
[0084] As the temperature of the filter housing 130 is lowered, the possibility of explosion occurring during the combustion process may be reduced.
[0085] Referring to
[0086] When the combustion process is terminated in this way, each of the first to fifth valves 191 to 195 may be controlled so that the single crystal ingot can be grown in the first period Ti again.
[0087] According to the embodiment, the chamber 110 and the exhaust pipe 120 as well as the filter housing 130 can be quickly oxidation-combusted.
[0088] According to the embodiment, the possibility of explosion during combustion in the filter housing 130 may be reduced to prevent a risk due to explosion.
[0089] The detailed description above should not be construed as restrictive in all respects and should be considered as illustrative. The scope of the embodiments should be determined by reasonable interpretation of the appended claims, and all changes within the equivalent scope of the embodiments are included in the scope of the embodiments.