SEMICONDUCTOR PACKAGE STRUCTURE

Abstract

A semiconductor package structure includes a chip, a first conductive pillar, a dielectric layer, a first patterned conductive layer and a second patterned conductive layer. The chip has a first side with a first metal electrode pad and a second side with a second metal electrode pad. The first conductive pillar is disposed adjacent to the chip. The dielectric layer covers the chip and the first conductive pillar and exposes the first and second metal electrode pads of the chip and the first and second ends of the first conductive pillar. The first patterned conductive layer is disposed on a second surface of the dielectric layer and electrically connected between the second metal electrode pad and the second end of the first conductive pillar. The second patterned conductive layer is disposed on a first surface of the dielectric.

Claims

1. A semiconductor package structure, comprising: a sensor chip, which has a first side and a second side disposed on opposite sides, respectively, at least one first metal electrode pad is arranged at the first side and at least one second metal electrode pad is arranged at the second side; at least one first conductive pillar, which is a solid pillar and has a first end and a second end, with the at least one first conductive pillar is disposed adjacent to the sensor chip, and an axis direction of the at least one first conductive pillar is parallel to a height direction of the sensor chip; a dielectric layer, which is a single layer to cover the sensor chip and the at least one first conductive pillar, and at least exposes the at least one first metal electrode pad, the at least one second metal electrode pad, and the first and second ends of the at least one first conductive pillar; a first patterned conductive layer, which is disposed on a second surface of the dielectric layer and electrically connected between the second metal electrode pad of the sensor chip and the second end of the at least one first conductive pillar; a second patterned conductive layer, which is disposed on a first surface of the dielectric layer and directly electrically contacted to the first metal electrode pad of the sensor chip and the first end of the at least one first conductive pillar; and at least one second conductive pillar, which is disposed between the second metal electrode pad of the sensor chip and the first patterned conductive layer to electrically connect the both of them; wherein the sensor chip, the at least one first metal electrode pad, the at least one second metal electrode pad, the at least one first conductive pillar, the first patterned conductive layer, the second patterned conductive layer, and the at least one second conductive pillar form a dual-side conduction package structure.

2. The semiconductor package structure of claim 1, further comprising: a patterned protective layer, which covers at least part of the first patterned conductive layer and/or covers at least part of the second patterned conductive layer and part of the sensor chip.

3. The semiconductor package structure of claim 1, wherein the sensor chip comprises a sensing area on the first side, and the sensing area is exposed on the dielectric layer and the second patterned conductive layer.

4. The semiconductor package structure of claim 3, further comprising: a patterned protective layer, which covers at least part of the first patterned conductive layer and/or covers at least part of the second patterned conductive layer and part of the sensor chip, and exposes the sensing area of the sensor chip.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The parts in the drawings are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of at least one embodiment. In the drawings, like reference numerals designate corresponding parts throughout the various diagrams, and all the diagrams are schematic.

[0029] FIG. 1 is a sectional view showing a conventional chip package module made by wire bonding technology.

[0030] FIG. 2 is a sectional view showing a semiconductor package structure according to the preferred embodiment of the present invention.

[0031] FIG. 3A through FIG. 3I are schematic diagrams showing the first manufacturing method for semiconductor package structure according to the preferred embodiment of the present invention.

[0032] FIG. 4A through FIG. 4D are schematic diagrams showing the second manufacturing method for semiconductor package structure according to the preferred embodiment of the present invention.

[0033] FIG. 5A is a sectional view showing the semiconductor package structure having a first patterned protective layer.

[0034] FIG. 5B is a sectional view showing the semiconductor package structure having a second patterned protective layer.

[0035] FIG. 6A is a sectional view showing the semiconductor package structure according to another embodiment of the present invention.

[0036] FIG. 6B is a sectional view showing the semiconductor package structure according to furthermore embodiment of the present invention.

[0037] FIG. 7 is a sectional view showing another conventional chip package module.

DETAILED DESCRIPTION

[0038] Reference will now be made to the drawings to describe various inventive embodiments of the present disclosure in detail, wherein like numerals refer to like elements throughout.

[0039] FIG. 2 is a section diagram of the semiconductor package structure 20 in the preferred embodiment of the present invention. As shown in FIG. 2, the semiconductor package structure 20 includes a chip 21, two first conductive pillars 22a and 22b, a dielectric layer 23, a first patterned conductive layer 24, a second patterned conductive layer 25 and two second conductive pillars 26a and 26b.

[0040] The chip 21 is a sensing chip, such as an image sensing chip. In this embodiment, a 3D sensing chip with three-dimensional image sensing function is illustrated as an example. The chip 21 has a first side 211 and a second side 212, in which the first side 211 is the active side of the chip 21 and the second side 212 is the back side of the chip. The first side 211 of the chip 21 has a sensing area 213 and two first metal electrode pads 214a and 214b, in which the first metal electrode pads 214a and 214b are positioned at the outer edge of the sensing area 213, respectively. The second side 212 of the chip 21 also has two second metal electrode pads 215a and 215b.

[0041] The first metal electrode pads 214a and 214b as well as the second metal electrode pads 215a and 215b can be taken as the positive and negative poles of the chip 21, or P or N poles of the chip respectively. In addition, the metal electrode pads mentioned above are, for example, aluminum metal electrode pads, gold metal electrode pads, copper metal electrode pads or other conductive metal electrode pads. Furthermore, if the metal electrode pad is gold, its thickness is approximately less than 0.2 micron.

[0042] The first conductive pillars 22a and 22b are copper pillars, copper alloy pillars or other conductive metal pillars formed by non-electroplating process, which are solid, adjacent to the chip 21, and have a first end 221 and a second end 222, respectively. The height of the first conductive pillars 22a and 22b is higher than that of the chip 21 and the axis direction of the first conductive pillars 22a and 22b is parallel to that of the chip 21. In other words, first conductive pillars 22a and 22b are positioned adjacent to the chip 21, respectively.

[0043] The dielectric layer 23 has a first surface 231 and a second surface 232, and it covers the chip 21 and the first conductive pillars 22a and 22b. The first metal electrode pads 214a and 214b, the sensing area 213 and the first ends 221 of the first conductive pillars 22a and 22b are selectively exposed to the first surface 231 of the dielectric layer 23, while the second metal electrode pads 215a and 215b and the second ends 222 of the first conductive pillars 22a and 22b are selectively exposed to the second surface 232 of the dielectric layer 23. In short, the first metal electrode pads 214a and 214b, the sensing area 213, the first ends 221 of the first conductive pillars 22a and 22b, the second metal electrode pads 215a and 215b and the second end 222 of the first conductive pillars 22a and 22b are selectively not covered by the dielectric layer 23.

[0044] The dielectric layer 23 is made of insulating materials like novolac-based resin, epoxy-based resin or silicone-based resin. In addition, the dielectric layer 23 can also be high filler content dielectric material such as molding compound with the epoxy as the base material, the proportion of epoxy resin in the whole molding compound is about 8%-12%, and mingle with fillers accounting for about 70%-90% of the total proportion. Among them, the fillers can be silica and alumina, which will improve mechanical strength, reduce linear thermal expansion coefficient, increase heat conduction and water resistance, and reduce excessive glue.

[0045] The second conductive pillars 26a and 26b are solid, and disposed in the dielectric layer 23 at the position corresponding to the second metal electrode pads 215a and 215b. Among them, the second conductive pillars 26a and 26b are so-called blind via in the field of semiconductor technology, which are formed by making holes in the dielectric layer 23, and then filling with or electroplating with metals like copper for the electric conduction of the second metal electrode pads 215a and 215b.

[0046] The first patterned conductive layer 24 is disposed on a second surface 232 of the dielectric layers 23, which is to electrically connect the second end 222 of the first conductive pillar 22a to the second metal electrode pad 215a of the chip 21 by the second conductive pillar 26a. In addition, the first patterned conductive layer 24 is to electrically connect the second end 222 of the first conductive pillar 22b to the second metal electrode pad 215b of the chip 21 by the second conductive pillar 26b.

[0047] As mentioned above, the first metal electrode pad 214a of the chip 21 can form an electrical circuit with the second metal electrode pad 215a by the second patterned conductive layer 25, the first conductive pillar 22a, the first patterned conductive layer 24 and the second conductive pillar 26a; on the other hand, the first metal electrode pad 214b of the chip 21 can form an electrical circuit with the second metal electrode pad 215b by the second patterned conductive layer 25, the first conductive pillar 22b, the first patterned conductive layer 24 and the second conductive pillar 26b. Accordingly, the semiconductor package structure provided by the present invention can form a dual-side conduction package structure of the chip, and the thermal energy generated by the chip can be quickly dissipated to outside via the metal second conductive pillar, the patterned conductive layers and the first conductive pillars.

[0048] Hereof, the more is in other embodiments, the second conductive pillar can also be disposed in the dielectric layer at the position corresponding to the first metal electrode pad of the chip, and can form a conductive circuit with the second metal electrode pad of the chip by the second patterned conductive layer, the first conductive pillar, the first patterned conductive layer and the second conductive pillar electrically connected to the second metal electrode pad.

[0049] Next, refer to FIGS. 3A to 3I to illustrate the first manufacturing method of the semiconductor package structure in the preferred embodiment of the present invention.

[0050] As shown in FIG. 3A, a carrier 91 is provided, which can be either a metal plate or an insulating plate. In particular, only the dies or chips formed in a single wafer can be packaged simultaneously in the conventional wafer type process, which is time-consuming and has many process limitations. Compared with that, the present invention uses a panel type package process, in which the area of the carrier 91 is a plurality times that of a single wafer. Accordingly, the carrier 91 of the present invention can carry out the package process of all chips (dies) cut from a plurality of wafers at the same time so as to effectively save the manufacturing time.

[0051] As shown in FIG. 3B, a temporary bonding layer 92 is disposed on a surface 911 of the carrier 91. Wherein, the temporary bonding layer 92 can be made of polymer viscous material, viscous detachable film or other viscous material.

[0052] As shown in FIG. 3C, the chip 21 cut from the wafer is connected to the temporary bonding layer 92 by its first side 211 that has the first metal electrode pads 214a and 214b, and the sensing area 213. In this embodiment, the first side 211 is the active side of the chip 21, so the connection mode is called “Face-down”. In addition, the present embodiment takes a single chip as an example to illustrate that in practice, a plurality of chips can be connected to the temporary bonding layer simultaneously or in stages.

[0053] As shown in FIG. 3C, the first conductive pillars 22a and 22b are connected to the temporary bonding layer 92 by the first end 221, and they are disposed adjacent to the chip 21. The first conductive pillars 22a and 22b are conductive metal pillars, such as copper pillars or copper alloy pillars, which can be pre-formed by non-electroplating process.

[0054] If the disposing sequence of the chip 21 and first conductive pillars 22a and 22b are not restrictive, in other words, the first conductive pillars 22a and 22b can be connected to the temporary bonding layer 92 before the chip 21 is connected to the temporary bonding layer 92.

[0055] As shown in FIG. 3D, the dielectric layer 23 covers the chip 21 and first conductive pillars 22a and 22b, then the surface of the dielectric layer 23 is ground with the grinding process to expose the second end 222 of the first conductive pillars 22a and 22b.

[0056] As shown in FIG. 3E, the holes 233 and 234 are formed in the dielectric layer 23 at the position corresponding to the second metal electrode pads 215a and 215b, so as to expose the second metal electrode pads 215a and 215b on the second side 212 of the chip 21.

[0057] As shown in FIG. 3F, the second conductive pillars 26a and 26b are formed by filling metal materials with the electroplating or other process respectively in the holes 233 and 234.

[0058] As shown in FIG. 3G, the first patterned conductive layer 24 is formed to electrically connect the second end 222 of the first conductive pillars 22a and 22b, and the second metal electrode pads 215a and 215b of the chip 21. The first patterned conductive layer 24 may include conductive metal materials such as copper, silver, nickel or alloys of their composition and it can be formed with the procedure of exposure and development by microlithography etching technology in conjunction with additional photoresistive layer (not shown in the figure) and then with the electroplating process. However, in the manufacturing method of the present invention, the circuit layout of the first patterned conductive layer 24 is not limited to the above-mentioned electrical connection mode. In other embodiments, each part of the first patterned conductive layer 24 may also have other electrical connection modes, thus having different circuit layout. Alternatively, for the first patterned conductive layer 24 in the same embodiment, different sections at different positions will also present different electrical connection modes.

[0059] It is to be explained that in other embodiments, as shown in FIGS. 3F and 3G, the forming of second conductive pillars 26a and 26b and first patterned conductive layer 24 can be completed simultaneously in the same step by microlithography etching technology in conjunction with electroplating process.

[0060] As shown in FIG. 3H, the temporary bonding layer 92 and the carrier 91 are removed to expose the first side 211 of the chip 21, the first end 221 of first conductive pillars 22a and 22b, and the first surface 231 of the dielectric layer 23, and form a semi-finished package. After the temporary bonding layer 92 and the carrier 91 are removed, the semi-finished package can be selectively flipped so that the first side 211 of the chip 21 is upwards for subsequent processing. However, whether to flip depends on the process requirement and is not a necessary step.

[0061] As shown in FIG. 3I, the second patterned conductive layer 25 is formed to electrically connect the first end 221 of the first conductive pillars 22a and 22b and the first metal electrode pads 214a and 214b of the chip 21, thus the main semiconductor package structure 20 is completed. In this embodiment, the material and manufacturing process of the second patterned conductive layer 25 are the same or similar as that of the first patterned conductive layer 24.

[0062] Following, refer to FIGS. 3A to 3E and 4A to 4D to illustrate the second manufacturing method of the semiconductor package structure in the preferred embodiment of the present invention, in which the same components are described with the same component symbols. In addition, in the present embodiment, the steps from FIGS. 3A to 3E are the same as those described above.

[0063] Referring to FIG. 4A, the temporary bonding layer 92 and the carrier 91 are removed after laser drilling as shown in FIG. 3E to expose the first side 211 of the chip 21, the first end 221 of first conductive pillars 22a and 22b, and the first surface 231 and the second surface 232 of the dielectric layer 23.

[0064] As shown in FIG. 4B, the second conductive pillars 26a and 26b are formed by filling metal materials with the electroplating or other process respectively in the holes 233 and 234.

[0065] As shown in FIG. 4C, the first patterned conductive layer 24 is formed to electrically connect the second end 222 of the first conductive pillars 22a and 22b, and to electrically connect the second metal electrode pads 215a and 215b of the chip 21 by the second conductive pillars 26a and 26b. The execution procedure of the first patterned conductive layer 24 is the same as that of the preceding embodiment.

[0066] Same as the above embodiment, in other embodiments as shown in FIGS. 4B and 4C, the forming of second conductive pillars 26a and 26b and the first patterned conductive layer 24 can be completed simultaneously in the same step by the microlithography etching technology in conjunction with the electroplating process.

[0067] As shown in FIG. 4D, the second patterned conductive layer 25 is formed to electrically connect the first end 221 of the first conductive pillars 22a and 22b and the first metal electrode pads 214a and 214b of the chip 21, thus the main semiconductor package structure 20 is completed, the material and manufacturing process of the second patterned conductive layer 25 are the same or similar as that of embodiment above.

[0068] In particular, the steps shown in FIGS. 4C and 4D can be carried out simultaneously depending on different process technology. In other words, the first patterned conductive layer 24 and the second patterned conductive layer 25 can be completed simultaneously to save more processing time. It is further explained that the second conductive pillars 26a and 26b, the first patterned conductive layer 24 and the second patterned conductive layer 25 can be completed in the same step to save more processing time.

[0069] Following the above, the semiconductor package structure in the preferred embodiment of the present invention can also include the protective layer, which can reduce the risk of oxidation of the semiconductor package structure or expand the application scope of the semiconductor package structure. Refer to FIGS. 5A and 5B below for further illustration of the variation aspect in the semiconductor package structures having the patterned protective layers.

[0070] As shown in FIG. 5A, the difference between the semiconductor package structure 20a and the aforementioned semiconductor package structure 20 is that the semiconductor package structure 20a includes the first patterned protective layer 27; its manufacturing method can be followed to the steps in FIG. 3I or FIG. 4D. The first patterned protective layer 27 can be formed by microlithography etching technology, which covers the first surface 231 of at least part of the dielectric layer 23, the second patterned conductive layer 25 and the first side 211 of part of the chip 21. In particular, since the chip 21 of this embodiment is a 3D sensing chip, so the first patterned protective layer 27 is not formed within the sensing area 213. In other words, the first patterned protective layer 27 has an opening 271a at the position corresponding to the sensing area 213 of the chip 21. In addition, in other embodiments, the region corresponding to the sensing area 213 can be filled with high transparency material (not shown in the figure) with a transmittance of light over 70% to protect the sensing area 213 of the chip 21.

[0071] Furthermore, as shown in FIG. 5B, the difference between the semiconductor package structure 20b and the aforementioned semiconductor package structure 20a is that the semiconductor package structure 20b includes the second patterned protective layer 28, which is same as the first patterned protective layer 27 that can be formed by microlithography etching technology, and covers the second surface 232 of at least part of the dielectric layer 23 and part of the first patterned conductive layer 24. In the present embodiment, the second patterned protective layer 28 has two openings 281a and 281b to expose part of the first patterned conductive layer 24. Wherein, the first patterned conductive layer 24 exposed can be used as an electrical connection pad (or bonding pad).

[0072] In other embodiments, according to different applications, also only the second patterned protective layer 28 can be formed to cover the second surface 232 of at least part of the dielectric layer 23 and part of the first patterned conductive layer 24, without the first patterned protective layer 27.

[0073] In addition, after completing the process of each stage mentioned above, the cutting single process can be selectively carried out; that is to say, a plurality of panel type semiconductor package structure aggregation is cut into single semiconductor package structure. In the follow-up, the conductive bumps (or solder) can be disposed at the openings 281a and 281b by welding process to form electrical connections with other carriers, substrates, circuit boards or electrical components (not shown in the figure).

[0074] Please refer to FIGS. 6A and 6B for a brief description of other implementation variation aspects of the semiconductor package structure of the present invention. As shown in FIG. 6A, the difference between the semiconductor package structure 20a and the above-mentioned embodiments is that the second metal electrode pads 215a and 215b of the chip 21 are directly in contact with the first patterned conductive layer 24. In other words, the steps of forming the second conductive pillars 26a and 26b in the above embodiments can be omitted.

[0075] As shown in FIG. 6B, the difference between the semiconductor package structure 20b and the above embodiments is that the first metal electrode pads 214a and 214b of chip 21 are electrically connected to the second patterned conductive layer 25 by the second conductive pillars 26c and 26d. For example, the conductive through holes 26c and 26D can be formed with electroplating process after disposed on the temporary bonding layer 92 as shown in FIG. 3B above.

[0076] In addition, in other embodiments, the first patterned protective layer 27 and/or the second patterned protective layer 28 can selectively cover the first patterned conductive layer 24 or the second patterned conductive layer 25 of FIGS. 6A and 6B, but with several different implementation variation aspects.

[0077] In summary, compared with the prior art, the semiconductor package structure of the present invention has the following characteristics: (1) The ceramic substrate and the package structure using wire bound technology are omitted, so a thinner structure can be provided. (2) The cost of package structure can be reduced by eliminating the use of gold bonding wire and heat conduction layer. (3) The first conductive pillars are made by placing premade copper pillars, copper alloy pillars or other conductive metal pillars on the temporary bonding layers, which can improve the size limitation of traditional electroplating process, and improve the electrical quality which are affected by poor uniformity caused by blowhole during electroplating. (4) The output speed can be increased with one-time processing for the number of chips (dies) more than a single wafer by using the panel type process. (5) The thermal dissipation capacity is greatly increased by the dual-side conduction package that the thermal energy generated by the sensor chip can be conducted from the metal electrodes on both sides of the chip and the solid first conductive pillars in addition to the general thermal dissipation path. (6) Compared with the hollow structures disclosed in the prior art, the second conductive pillars and the first conductive pillars of the invention are solid structures, which have better thermal conductivity and electrical conductivity.

[0078] Even though numerous characteristics and advantages of certain inventive embodiments have been set out in the foregoing description, together with details of the structures and functions of the embodiments, the disclosure is illustrative only. Changes may be made in detail, especially in matters of arrangement of parts, within the principles of the present disclosure to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed.