PROCESSES FOR PRODUCING ORTHOPEDIC IMPLANTS HAVING A SUBSURFACE LEVEL CERAMIC LAYER APPLIED VIA BOMBARDMENT

Abstract

The process for producing an orthopedic implant having an integrated ceramic surface layer includes steps for positioning the orthopedic implant inside a vacuum chamber, emitting a relatively high energy beam into the at least two different vaporized metalloid or transition metal atoms in the vacuum chamber to cause a collision therein to form ceramic molecules, and driving the ceramic molecules with the ion beam into an outer surface of the orthopedic implant at a relatively high energy such that the ceramic molecules implant therein and form at least a part of the molecular structure of the outer surface of the orthopedic implant, thereby forming the integrated ceramic surface layer.

Claims

1. A process for producing an orthopedic implant having an integrated ceramic surface layer, comprising the steps of: positioning the orthopedic implant inside a vacuum chamber; vaporizing at least two different metalloid or transition metal atoms inside the vacuum chamber; emitting a relatively high energy beam comprising an energy level between 0.1-100 kiloelectron volts (KeV) into the at least two different metalloid or transition metal atoms inside the vacuum chamber to cause a collision to form ceramic molecules; driving the ceramic molecules with the same beam into an outer surface of the orthopedic implant at a relatively high energy such that the ceramic molecules implant therein and form at least a part of the molecular structure of the outer surface of the orthopedic implant simultaneously while maintaining the outer surface of the orthopedic implant at a temperature below 200 degrees Celsius, thereby forming the integrated ceramic surface layer; and forming an intermix layer underneath the integrated ceramic surface layer, the intermix layer including a mixture of subsurface level ceramic molecules and a base material of the orthopedic implant, wherein the intermix layer is molecularly integrated with the base material, wherein the integrated ceramic surface layer and the base material cooperate to sandwich the intermix layer in between.

2. The process of claim 1, wherein the beam comprises an ion beam comprising nitrogen ions selected from the group consisting of N+ ions and N.sub.2+ ions.

3. The process of claim 2, wherein the emitting step includes the step of delivering the nitrogen ions at a rate of about 1-5 nitrogen ions for each vaporized metalloid or transition metal atom.

4. The process of claim 1, including the step of cleaning the outer surface of the orthopedic implant with the beam at an energy level between about 1-1000 electron volts.

5. The process of claim 1, wherein the positioning step includes the step of mounting the orthopedic implant to a selectively movable platen for repositioning an orientation of the orthopedic implant relative to the beam.

6. The process of claim 1, including the step of vaporizing the at least two different metalloid or transition metal atoms off at least two different metalloid or transition metal ingots.

7. The process of claim 1, including the step of propagating the beam.

8. The process of claim 1, including the step of regulating a formation rate of the ceramic molecules by adjusting the beam energy or beam density.

9. The process of claim 1, including the step of back-filling the vacuum chamber with the at least two different metalloid or transition metal atoms.

10. The process of claim 1, wherein the integrated ceramic surface layer substantially comprises the ceramic molecules.

11. The process of claim 1, wherein the driving step includes the step of applying the integrated ceramic surface layer to less than an entire outer surface area of the orthopedic implant.

12. The process of claim 1, wherein the integrated ceramic surface layer comprises a substantially uniform thickness where driven into the orthopedic implant.

13. The process of claim 1, wherein the metalloid atoms comprise silicon atoms.

14. The process of claim 1, wherein the transition metal atoms comprise titanium atoms, silver atoms, gold atoms, niobium atoms, chromium atoms, or Molybdenum atoms.

15. The process of claim 1, wherein the integrated ceramic surface layer comprises a non-oxide nitride ceramic.

16. The process of claim 1, wherein the integrated ceramic surface layer comprises molecules selected from the group consisting of SiNAg, SiAuN, SiNbN, SiCrN, SiMoN, TiSiN, TiNAg, TiNAu, TiNbN, TiCrN, TiMoN, AgAuN, NbNAg, CrNAg, MoNAg AuNbN, AuCrN, AuMoN, NbCrN, NbMoN, and CrMoN.

17. The process of claim 1, wherein the base material comprises a metal alloy selected from the group consisting of cobalt, titanium, and zirconium, a ceramic material selected from the group consisting of alumina and zirconia, an organic polymer, or a composite organic polymer.

18. A process for producing an orthopedic implant having an integrated ceramic surface layer, comprising the steps of: positioning the orthopedic implant inside a vacuum chamber; vaporizing at least two different metalloid or transition metal atoms inside the vacuum chamber; emitting ions via a relatively high energy ion beam into the at least two different vaporized metalloid or transition metal atoms in the vacuum chamber to cause a collision between the ions and the at least two different vaporized metalloid or transition metal atoms to form ceramic molecules; driving the ceramic molecules with the ion beam into an outer surface of the orthopedic implant at a relatively high energy such that the ceramic molecules implant therein and form at least a part of the molecular structure of the outer surface of the orthopedic implant simultaneously while maintaining the outer surface of the orthopedic implant at a temperature below 200 degrees Celsius, thereby forming the integrated ceramic surface layer; and forming an intermix layer underneath the integrated ceramic surface layer, the intermix layer including a mixture of subsurface level ceramic molecules and a base material of the orthopedic implant, wherein the intermix layer is molecularly integrated with the base material, wherein the integrated ceramic surface layer and the base material cooperate to sandwich the intermix layer in between.

19. The process of claim 18, wherein the ion beam includes nitrogen ions selected from the group consisting of N+ ions or N.sub.2+ ions.

20. The process of claim 19, wherein the emitting step includes the step of delivering the nitrogen ions at a rate of about 1-5 nitrogen ions for each vaporized metalloid or transition metal atom.

21. The process of claim 18, wherein the vaporized metalloid atoms comprise silicon.

22. The process of claim 18, wherein the transition metal atoms are selected from the group consisting of titanium, silver, gold, niobium, chromium, or molybdenum.

23. The process of claim 18, including the step of cleaning the outer surface of the orthopedic implant with the ion beam at an energy level between about 1-1000 electron volts.

24. The process of claim 18, wherein the positioning step includes the step of mounting the orthopedic implant to a selectively movable platen for repositioning an orientation of the orthopedic implant relative to the ion beam.

25. The process of claim 18, wherein the vaporizing step includes evaporating the at least two different metalloid or transition metal atoms off at least two different metalloid or transition metal ingots.

26. The process of claim 18, including the step of propagating the ion beam.

27. The process of claim 18, including the step of regulating a formation rate of the ceramic molecules by adjusting an energy level or a beam density of the ion beam.

28. The process of claim 18, including the step of backfilling the vacuum chamber with vaporized metalloid atoms or transition metal atoms.

29. The process of claim 18, wherein the integrated ceramic surface layer substantially comprises the ceramic molecules.

30. The process of claim 18, wherein the driving step includes the step of applying the integrated ceramic surface layer to less than an entire outer surface area of the orthopedic implant.

31. The process of claim 18, wherein the integrated ceramic surface layer comprises a substantially uniform thickness where driven into the orthopedic implant.

32. The process of claim 18, wherein the integrated ceramic surface layer comprises a non-oxide nitride ceramic.

33. The process of claim 18, wherein the integrated ceramic surface layer comprises molecules selected from the group consisting of SiNAg, SiAuN, SiNbN, SiCrN, SiMoN, TiSiN, TiNAg, TiNAu, TiNbN, TiCrN, TiMoN, AgAuN, NbNAg, CrNAg, MoNAg AuNbN, AuCrN, AuMoN, NbCrN, NbMoN, and CrMoN.

34. The process of claim 18, wherein the base material comprises a metal alloy selected from the group consisting of cobalt, titanium, and zirconium, a ceramic material selected from the group consisting of alumina and zirconia, an organic polymer, or a composite organic polymer.

35. A process for producing an orthopedic implant having an integrated ceramic surface layer, comprising the steps of: positioning the orthopedic implant inside a vacuum chamber; vaporizing at least two different metalloid or transition metal atoms off at least two respective metalloid or transition metal ingots; emitting ions via a relatively high energy ion beam comprising an energy level between 0.1 and 20 kiloelectron volts (KeV) into the at least two different vaporized metalloid or transition metal atoms in the vacuum chamber to cause a collision between the ions and the at least two different vaporized metalloid or transition metal atoms to form ceramic molecules; cleaning an outer surface of the orthopedic implant with the ion beam at an energy level between about 1-1000 electron volts; driving the ceramic molecules with the ion beam into the outer surface of the orthopedic implant at a relatively high energy such that the ceramic molecules implant therein and form at least a part of the molecular structure of the outer surface of the orthopedic implant simultaneously while maintaining the outer surface of the orthopedic implant at a temperature below 200 degrees Celsius, thereby forming the integrated ceramic surface layer; and forming an intermix layer underneath the integrated ceramic surface layer, the intermix layer including a mixture of subsurface level ceramic molecules and a base material of the orthopedic implant, wherein the intermix layer is molecularly integrated with the base material, wherein the integrated ceramic surface layer and the base material cooperate to sandwich the intermix layer in between.

36. The process of claim 35, wherein the ion beam includes nitrogen ions selected from the group consisting of N+ ions or N.sub.2+ ions and the emitting step includes the step of delivering the nitrogen ions at a rate of about 1-5 nitrogen ions for each vaporized metalloid or transition metal atom.

37. The process of claim 35, wherein the vaporized metalloid atoms comprise silicon.

38. The process of claim 35, wherein the integrated ceramic surface layer comprises molecules selected from the group consisting of SiNAg, SiAuN, SiNbN, SiCrN, SiMoN, TiSiN, TiNAg, TiNAu, TiNbN, TiCrN, TiMoN, AgAuN, NbNAg, CrNAg, MoNAg AuNbN, AuCrN, AuMoN, NbCrN, NbMoN, and CrMoN.

39. The process of claim 35, wherein the vaporized transition metal atoms are selected from the group consisting of titanium, silver, gold, niobium, chromium, or molybdenum.

40. The process of claim 35, wherein the positioning step includes the step of mounting the orthopedic implant to a selectively movable platen for repositioning an orientation of the orthopedic implant relative to the ion beam.

41. The process of claim 35, including the step of propagating the ion beam, wherein the integrated ceramic surface layer substantially comprises the ceramic molecules.

42. The process of claim 35, including the step of regulating a formation rate of the ceramic molecules by adjusting an energy level or a density of the ion beam, wherein the driving step includes the step of applying the integrated ceramic surface layer to less than an entire outer surface area of the orthopedic implant.

43. The process of claim 35, including the steps of backfilling the vacuum chamber with at least one of the vaporized metalloid or transition metal atoms, wherein the integrated ceramic surface layer comprises a substantially uniform thickness where driven into the orthopedic implant.

44. The process of claim 35, wherein the integrated ceramic surface layer comprises a non-oxide nitride ceramic including at least two elements of silicon, titanium, silver, gold, niobium, chromium, or Molybdenum.

45. The process of claim 35, wherein the base material comprises a metal alloy selected from the group consisting of cobalt, titanium, and zirconium, a ceramic material selected from the group consisting of alumina and zirconia, an organic polymer, or a composite organic polymer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The accompanying drawings illustrate the invention. In such drawings:

[0021] FIG. 1 is a flowchart illustrating a process for producing orthopedic implants having a subsurface level ceramic bombardment layer, as disclosed herein;

[0022] FIG. 2 is a diagrammatic view of an ion beam enhanced deposition (IBED) chamber, in accordance with the embodiments disclosed herein;

[0023] FIG. 3a is a diagrammatic view illustrating interaction of an ion beam with vaporized metalloid and/or transition metal atoms;

[0024] FIG. 3b is a diagrammatic view illustrating the ion beam promoting reaction of the vaporized metalloid and/or transition metal atoms to form ceramic molecules;

[0025] FIG. 4a is a diagrammatic view illustrating the ion beam driving the ceramic molecules into the angling and/or rotating surface of the orthopedic implant, thereby forming a subsurface intermixed layer;

[0026] FIG. 4b is a diagrammatic view illustrating the ion beam further driving the ceramic molecules into the angling and/or rotating surface of the orthopedic implant, thereby forming a subsurface ceramic layer of relatively uniform thickness over the subsurface intermixed layer; and

[0027] FIG. 5 is a cross-sectional view of the orthopedic implant having the subsurface ceramic layer produced by the ion beam implantation or bombardment of the ceramic molecules therein.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] As shown in the exemplary drawings for purposes of illustration, the processes for producing orthopedic implants having a subsurface level ceramic bombardment layer is referred to by numeral (100) with respect to the flowchart in FIG. 1, while FIGS. 2-4b more specifically illustrate the operation of said processes, and FIG. 5 illustrates an exemplary orthopedic implant with a subsurface level ceramic bombardment layer 10. More specifically, the first step (102) in the process (100), as shown in FIG. 1, is to mount an orthopedic implant workpiece 12 onto an angling and/or rotating part platen 14 inside a vacuum chamber 16 suitable for performing ion beam implantation (e.g., ion beam enhanced deposition (IBED)). The processes disclosed herein improve the integration of a ceramic into the orthopedic implant by kinetically driving ceramic molecules into a subsurface layer of the orthopedic implant. This improved integration of the ceramic reduces delamination and prevents future wear and corrosion. Furthermore, the processes disclosed herein can reduce energy costs by performing the IBED process at temperatures well below 200 degrees Celsius and without a heat treatment step. Accordingly, the processes disclosed herein also reduce energy costs associated with manufacturing the related implant products.

[0029] More specifically, FIG. 2 illustrates the orthopedic implant workpiece 12 mounted to the angling and/or rotating part platen 14 within the vacuum chamber 16. The orthopedic implant workpiece 10 may be made from a variety of metal alloys known in the art, such as cobalt, titanium, zirconium alloy, etc. In other embodiments, the orthopedic implant workpiece 10 may be made from ceramic materials known in the art, such as alumina (Al.sub.2O.sub.3) or zirconia (ZrO.sub.2). In still other embodiments, the orthopedic implant workpiece 10 may be made from organic polymers or composites of organic polymers. Of course, persons of ordinary skill in the art may recognize that the processes disclosed herein may be used with other types of materials, and that the scope of the present disclosure should not be limited only to those materials mentioned above. The part platen 14 may be able to rotate about a center axis 18 and/or tilt about a vertical axis 20 to facilitate maximum exposure of the orthopedic implant workpiece 10 to an ion beam 22 during the ceramic implantation process. In one embodiment, the orthopedic implant workpiece 10 may couple to the part platen 14 via an attachment 24 that may include a grip, clamp, or other device having a high friction surface to retain (e.g., by compression fit) the orthopedic implant workpiece 10. In this respect, any attachment known in the art capable of sufficiently securing the orthopedic implant workpiece 10 to the part platen 14, as the part platen 14 rotates and/or tilts, will suffice. The vacuum chamber 16 maintains a high vacuum environment during the ceramic implantation process to promote the propagation of ions from the ion beam 22 toward the surfaces of the orthopedic implant workpiece 10. The high vacuum environment additionally reduces the amount of contaminant gases present to prevent contamination of a ceramic layer 26 (shown best in FIG. 5) subsequently bombarded or implanted into a surface 28 of the orthopedic implant workpiece 10. In further embodiments, a plurality of the part platens 12 may be present within the vacuum chamber 16 during the ceramic implantation process. In this embodiment, a plurality of the orthopedic implant workpieces 10 may be mounted in an array on each of the part platens 12 to produce multiple ceramic-implanted orthopedic implants 10 during each ceramic implantation process.

[0030] Once the orthopedic implant workpiece 10 has been mounted on the part platen 14, the next step (104), as shown in FIG. 1, is to energize an ion beam generator 30 to produce the ion beam 22 of energized nitrogen ions capable of penetrating into the surface 28 of the orthopedic implant workpiece 10 as it rotates about the center axis 18 and/or pivots about the vertical axis 20. Here, FIG. 2 illustrates the ion beam generator 30 emitting the ion beam 22 directed at the surface 28 of the orthopedic implant workpiece 10. In one example, the ion beam generator 30 can include a Kaufman ion source (e.g., a gridded broad beam ion source of permanent magnet design). The ion beam generator 30 can be capable of delivering nitrogen ions (e.g., N+ ions and/or N.sub.2+ ions) at beam energies up to 102 kiloelectron volts (KeV) at currents up to 6 mA. In one embodiment, the beam energy may be in the range of 0.1 to 100 KeV; and in another embodiment, the beam energy may be in the range of 0.1 to 20 KeV. The ion beam 22 initially bombards the surface 28 of the orthopedic implant workpiece 10 with energized nitrogen ions during an ion beam cleaning process, thereby cleaning and augmenting the surface 28 of the orthopedic implant workpiece 10. Specifically, the initial bombardment of the orthopedic implant workpiece 10 during step (104) efficiently removes absorbed water vapor, hydrocarbons, and other substrate surface contaminants from the surface 28 of orthopedic implant workpiece 10. Removal of the substrate surface contaminants results in better implantation when the ceramic layer 26 is subsequently added to the subsurface of the orthopedic implant workpiece 10. Step (104) may also create defects in the surface 28 of orthopedic implant workpiece 10 which further promotes the subsequent implantation of the ceramic layer 26. At step (104) of the ceramic implantation process, relatively low energy ions (e.g., at beam energies between 1-1000 eV) can be employed to minimize sputtering at the surface 28 of orthopedic implant workpiece 10, while still being sufficiently energetic to produce the desired effects mentioned above.

[0031] Once the surface 28 of the orthopedic implant workpiece 10 has been cleaned and augmented by the ion beam 22, the next step (106) in accordance with FIG. 1 is to diffuse a mixture 32 of at least two different vaporized metalloid or transition metal atoms into the vacuum chamber 16. In one embodiment, the metalloid and/or transition metal atoms vaporized into the vacuum chamber 16 may be silicon (Si), titanium (Ti), silver (Ag), gold (Au), niobium (Nb), chromium (Cr), or Molybdenum (Mo), or any combination thereof. Although, of course, any metalloid and/or transition metal atoms may be compatible with the processes disclosed herein. In this respect, a silicon, titanium, silver, gold, niobium, chromium, and/or molybdenum ingot can be used as source materials to produce the mixture 32. In this regard, as shown in FIG. 2, a first evaporator 34 located within the vacuum chamber 16 may produce a quantity of a first vaporized metalloid or transition metal atom 36 by electron beam evaporation, and a second evaporator 34′ may produce a quantity of a second vaporized metalloid or transition metal atom 36′ by electron beam evaporation. Here, the evaporators 34, 34′ may direct an electron beam (not shown) at a silicon, titanium, silver, gold, niobium, chromium, and/or molybdenum ingot workpiece (also not shown) to provide a direct flux of the vaporized metalloid or transition metal atoms 36, 36′, which disperse within the vacuum chamber 16 as shown. In alternative embodiments, a single evaporator 34 may be used to produce the at least two different vaporized metalloid or transition metal elements 36, 36′. The ion beam 22 may then energize the mixture 32 to form ceramic molecules 42, as discussed in detail herein.

[0032] Once the mixture 32 has been introduced into the vacuum chamber 16, the next step (108) as shown in FIG. 1 is to promote and control the reaction of the at least two different vaporized metalloid or transition metal atoms 36, 36′ in the mixture 32 using the ion beam 22, as shown in FIGS. 3a-3b. First, the positively charged nitrogen ions of the ion beam 22 collide with and kinetically excite the at least two different vaporized metalloid or transition metal atoms 36, 36′ to promote the reaction process generally shown in FIG. 3a. Once kinetically excited, the vaporized metalloid or transition metal atoms 36, 36′ react to form the ceramic molecules 42 as shown in FIG. 3b. The ceramic molecules 42 may be non-oxide nitride ceramic molecules and, e.g., may include SiNAg, SiAuN, SiNbN, SiCrN, SiMoN, TiSiN, TiNAg, TiNAu, TiNbN, TiCrN, TiMoN, AgAuN, NbNAg, CrNAg, MoNAg, AuNbN, AuCrN, AuMoN, NbCrN, NbMoN, CrMoN, etc. Of course, any combination of the different elements may be used so long as the ceramic molecules 42 are formed. For example, if titanium, niobium, and silver are used, the ceramic molecules 42 may be TiNbNAg. The rate of formation of the ceramic molecules 42 can be controlled by varying the energy and/or the density of the ion beam 22. For example, increasing the energy and/or density of the ion beam 22 increases the rate of formation of the ceramic molecules 42, and vice versa. As the vaporized metalloid and/or transition metal atoms 36, 36′ react during step (108) to form ceramic molecules 42, a controlled backfill of vaporized metalloid and/or transition metal atoms 36, 36′ may be employed to maintain the desired concentration of reactant molecules in the vacuum chamber 16.

[0033] In some embodiments of the processes disclosed herein, steps (106) and (108) may be performed without halting the cleaning process described in step (104). That is, the vaporized metalloid and/or transition metal atoms 36, 36′ may be introduced into the vacuum chamber 16 without halting the ion beam cleaning process of step (104). In this way, the ion beam 22 immediately begins promoting the reaction of the vaporized metalloid and/or transition metal atoms 36, 36′ once introduced into vacuum chamber 16. This can be more efficient from a manufacturing standpoint by reducing the duration required to perform the ceramic implantation process disclosed herein. Additionally, introducing the vaporized metalloid and/or transition metal atoms 36, 36′ without halting the cleaning process can prevent subsequent contamination of the substrate surface 28. This may further promote generation of the subsurface ceramic layer 26 in the surface 28 of the orthopedic implant workpiece 10.

[0034] Once the ceramic molecules 42 are formed, the ion beam 22 subsequently drives the ceramic molecules 42 into the surface 28 of the rotating and/or pivoting orthopedic implant workpiece 10, per step (110) in FIG. 1. The high-energy nitrogen ions of the ion beam 22 collide with the ceramic molecules 42 to impart kinetic energy thereto. The energized ceramic molecules 42 subsequently collide with the surface 28 of the orthopedic implant workpiece 10 and bombard or implant therein, thereby initially forming a subsurface intermixed layer 44, as shown in FIG. 4a. The ceramic molecules 42 bombarded or implanted therein integrate with the surface 28, as opposed to simply be deposited on the surface 28 as an over surface coating, as is the current practice with known silicon nitride deposition procedures. The intermixed layer 44 is basically a transition region wherein the surface molecules 46 of the orthopedic implant workpiece 10 become intermixed with the ceramic molecules 42 as a result of the energized bombardment by way of the ion beam 22. The accumulation of ceramic molecules 42 within the intermixed layer 44 results in alloyed ceramic molecules 42 and substrate molecules 46. By varying the energy and/or density of the beam 22, persons skilled in the art can vary the depth into which the ceramic molecules 42 are driven.

[0035] As the intermixed layer 44 develops, the ion beam 22 continues to drive the ceramic molecules 42 into the subsurface of the surface 28 of the orthopedic implant workpiece 10. As shown in FIG. 4b, through time, the ceramic layer 26 subsequently begins to form above the intermixed layer 44. The depth the ceramic layer 26 forms into the subsurface of the surface 28 varies according to various variables, including the energy and/or density of the ion beam 22 (i.e., higher energy or greater density results in a thicker or deeper ceramic layer 26, and vice versa) and/or the duration of bombardment with the ion beam 22 (i.e., a longer bombardment in a particular area may result in a thicker or deeper ceramic layer 26, and vice versa). Similarly, varying the rate of nitrogen ion arrival can affect the stoichiometry of the resulting ceramic layer 26. For example, the nitrogen ion arrival rate may be in the range of about one (1) nitrogen ion to about five (5) nitrogen ions for each vaporized metalloid and/or transition metal atoms 36, 36′ in the mixture 32. Persons of ordinary skill in the art may vary the nitrogen ion arrival rate to obtain a ceramic suitable for the desired application.

[0036] As a result of step (110), the ceramic layer 26 is molecularly integrated into the subsurface of the surface 28 (e.g., as shown in FIG. 5) of the orthopedic implant workpiece 10 and exhibits superior retention relative to silicon nitride coatings simply deposited as an over coating on the surface 28 by traditional PVD processes. This is due, at least in part, to the high strength of the alloy bond formed at an atomic level by the ion bombardment, which creates the intermixed layer 44 between the ceramic layer 26 and the surface molecules 46 of the orthopedic implant workpiece 10. As such, this ultimately changes the atomic foundation of the subsurface of the orthopedic implant workpiece 12. As the bombardment continues, the outermost ceramic layer 26 builds up, and does so over the entire orthopedic implant workpiece 12 as it rotates and/or pivots with the part platen 14. Although, of course, the processes disclosed herein may include application to only a part of the orthopedic implant workpiece 12, e.g., the articulation surfaces, as opposed to the entire orthopedic implant workpiece 12. The articulation surfaces may later be polished, along with adjacent surfaces or other fixation surfaces. The material properties of the orthopedic implant workpiece 12, in combination with the energy intensity characteristics of the ion beam 22, limit the penetration depth to attain a more consistently uniform ceramic layer 26. In this regard, the ceramic layer 26 is less likely to delaminate from the orthopedic implant workpiece 10 when compared to conventional PVD coatings. As such, the processes and implants disclosed herein are able to attain the benefits of ceramics across different types of surface finishes and surface requirements of an orthopedic implant.

[0037] During step (110), the surface 28 of the orthopedic implant workpiece 10 increases in temperature as a result of bombardment by the ion beam 22. As such, a cooler can be utilized to cool the ceramic layer 26, the intermixed layer 44, and/or orthopedic implant workpiece 10 in general to prevent adverse or unexpected changes in the material properties due to heating. In this respect, cooling may occur in and/or around the area of the orthopedic implant workpiece 10 being bombarded or implanted with the ceramic layer 26, and including the part platen 14. Water or air circulation-based coolers may be used with the processes disclosed herein to provide direct or indirect cooling of the orthopedic implant workpiece 10.

[0038] FIG. 5 is a diagrammatic cross-sectional view illustrating the surface 28 of the orthopedic implant workpiece 10, including the resultant intermixed layer 44 and the ceramic layer 26 formed into the subsurface thereof. The processes disclosed herein result in the intermixed layer 44 having a thickness 48 and the ceramic layer 26 having an implantation thickness 50, as shown in FIG. 5. The intermixed layer 44 is positioned generally between the unaffected surface molecules 46 and the ceramic layer 26. Accordingly, the intermixed layer 44 may form a uniform layer immediately above the unaffected surface molecules 46, such as designated by a boundary 52, and the ceramic layer 26 may form a uniform layer immediately above the intermixed layer 44, such as designated by a boundary 54. The intermixed width 48 and the depth of the boundary 52 may vary depending on the energy and/or density of the ion beam 22, to increase (i.e., higher energy and/or density) or decrease (i.e., lower energy and/or density) the integration or implantation of the ceramic molecules 42 into the subsurface of the surface 28 of the orthopedic implant workpiece 10. Likewise, the implantation thickness 50 and the depth of the boundary 54 may vary depending on the energy and/or density of the ion beam 22, to increase (i.e., higher energy and/or density) or decrease (i.e., lower energy and/or density) the integration or implantation of the ceramic molecules 42 into the subsurface of the surface 28 of the orthopedic implant workpiece 10. In an exemplary embodiment, the intermixed width 48 may be between 0.1-100 nanometers, while the implantation thickness 50 may be between 1-10,000 nanometers.

[0039] The resulting ceramic layer 26 may exhibit excellent tribological properties, including long-term material stability and high biocompatibility, at least relative to alumina. Likewise, the ceramics may be semitransparent to X-rays and non-magnetic, thereby allowing MRI of soft tissues proximal to ceramic coated implants. Meanwhile, the ceramics may also have wear rates comparable to alumina. Furthermore, unlike zirconia, which is a good conductor of electricity, the ceramics may advantageously have high electrical resistivity, such as on the order of 10.sup.16 Ω.Math.cm. Ceramics, e.g., containing silver (Ag) may have anti-microbial and/or anti-colonial properties that inhibit or prevent the growth of bacteria on the implant.

[0040] Although several embodiments have been described in detail for purposes of illustration, various modifications may be made without departing from the scope and spirit of the invention. Accordingly, the invention is not to be limited, except as by the appended claims.