POWER MODULE FOR OPERATING AN ELECTRIC VEHICLE DRIVE WITH IMPROVED TEMPERATURE DETERMINATION OF THE POWER SEMICONDUCTORS

Abstract

A power module for operating an electric vehicle drive, comprising: numerous power switches, each of which has a power semiconductor; a control electronics for controlling the numerous power switches to generate an output current based on an input current; wherein the control electronics also comprises a temperature unit configured to detect an operating voltage and operating current in the power semiconductor, and determine the temperature of the power semiconductor based on the operating voltage and operating current.

Claims

1. A power module for operating an electric vehicle drive, comprising: a plurality of power switches, each of which has a power semiconductor; and control electronics configured to control the plurality of power switches to generate an output current based on an input current; wherein the control electronics also comprises a temperature unit configured to detect an operating voltage and operating current in the power semiconductor, and determine the temperature of the power semiconductor based on the operating voltage and operating current.

2. The power module according to claim 1, wherein the power semiconductors of the plurality of power switches function as transistors, wherein the operating voltage comprises a drain-source voltage in the power semiconductor.

3. The power module according to claim 1, wherein a diode is connected to a side of a drain electrode in the power semiconductor facing away from a source electrode in the power semiconductor, wherein the temperature unit is configured to detect a diode voltage applied to the diode as the operating voltage of the power semiconductor.

4. The power module according to claim 3, wherein the diode voltage is tapped into on a side of an anode in the diode facing away from a cathode in the diode.

5. The power module according to claim 3, wherein the diode forms a decoupling diode for decoupling a high voltage at the power semiconductor.

6. The power module according to claim 3, wherein the diode is located in at least one of a short circuit detection unit or an active clamping unit in the power module.

7. The power module according to claim 2, wherein the temperature unit is configured to determine the temperature of the power semiconductor by means of a calibration database.

8. The power module according to claim 1, wherein the power semiconductor functions as a transistor, and wherein the operating current comprises a positive drain-source current in the power semiconductor.

9. The power module according to claim 1, wherein the control electronics comprises: a controller component for generating a control signal based on an operating state of at least one of the power module or the electric vehicle drive, and a driver for controlling the power switches based on the control signal, wherein the temperature unit is located in the controller component in the control electronics.

10. A method for determining a temperature in a power module comprising a plurality of power switches, each of which has a power semiconductor, and a control electronics for controlling the numerous power switches, to generate an output current based on an input current, wherein the method comprises: detecting, by a temperature unit of the control electronics, an operating voltage and an operating current in the power semiconductor; and determining, by the control electronics, the temperature of the power semiconductor based on the operating voltage and operating current.

11. The method according claim 10, further comprising: determining, by the temperature unit, the temperature of the power semiconductor by means of a calibration database.

12. The method according claim 10, further comprising: generating, by a controller component of the control electronics, a control signal based on an operating state of at least one of the power module or the electric vehicle drive; and controlling, by a driver of the control electronics, the power switches based on the control signal, wherein the temperature unit is located in the controller component in the control electronics.

13. The power module according to claim 2, wherein a diode is connected to a side of a drain electrode in the power semiconductor facing away from a source electrode in the power semiconductor, wherein the temperature unit is configured to detect a diode voltage applied to the diode as the operating voltage of the power semiconductor.

14. The power module according to claim 13, wherein the diode voltage is tapped into on a side of an anode in the diode facing away from a cathode in the diode.

15. The power module according to claim 13, wherein the diode forms a decoupling diode for decoupling a high voltage at the power semiconductor.

16. The power module according to claim 13, wherein the diode is located in at least one of a short circuit detection unit or an active clamping unit in the power module.

17. The power module according to claim 3, wherein the temperature unit is configured to determine the temperature of the power semiconductor by means of a calibration database.

18. The power module according to claim 2, wherein the power semiconductor functions as a transistor, and wherein the operating current comprises a positive drain-source current in the power semiconductor.

19. The power module according to claim 2, wherein the control electronics comprises: a controller component for generating a control signal based on an operating state of at least one of the power module or the electric vehicle drive, and a driver for controlling the power switches based on the control signal, wherein the temperature unit is located in the controller component in the control electronics.

Description

[0020] Embodiments shall now be described by way of example and in reference to the attached drawings. Therein:

[0021] FIG. 1 shows a schematic illustration of a power module according to one embodiment;

[0022] FIG. 2 shows a schematic illustration of a circuitry in the power module in FIG. 1; and

[0023] FIG. 3 shows a schematic illustration of a method according to one embodiment.

[0024] The same reference symbols are used for the same or functionally similar elements in the drawings.

[0025] FIG. 1 shows a schematic illustration of a power module 10 according to one embodiment. The power module comprises numerous power switches 12, 14, 16, each containing a power semiconductor. The power semiconductors can be silicon, or a so-called wide-bandgap semiconductor (semiconductor with a wide bandgap), such as silicon carbide (SiC) or gallium nitride (GaN). The power module 10 comprises a control electronics 18 for controlling the power switches 12, 14, 16. The control electronics 18 contains a controller component 20 and a driver 22. The controller component 20 detects an operating state of the power module and/or the electric vehicle drive and generates a control signal on the basis thereof. The driver 22 controls the power switch based on the control signal, i.e. a gate voltage, drain voltage, source voltage, drain-source current, and/or source-drain current are determined in the power switch that is to be controlled.

[0026] The illustration of the power module 10 is simplified in FIG. 1. In general, the power module 10 preferably comprises a current input for an input current obtained from an input-side power source (e.g. a power battery), a current output for outputting an output current based on the input current, generated by means of the power switches 12, 14, 16 controlled by the control electronics 18. If the power module 10 is used for an inverter, an AC multiphase output current is generated, preferably by means of a pulse-width modulation of the power switches 12, 14, 16, based on a DC input current.

[0027] The power module 10 can also contain a DC link capacitor for smoothing the input voltage, and a heatsink for discharging heat when the power switch 12, 14, 16 is in operation. The power switches 12, 14, 16 can be attached to the heatsink via an insulation layer, i.e. a direct bonded copper (DBC) layer, comprising two copper layers and an insulation layer sandwiched between them.

[0028] There is also a temperature unit 24 in the control electronics 180, in particular in the controller component 20. The temperature unit 24 is used to detect an operating voltage and an operating current in the power semiconductor for one or more, or all, of the power switches 12, 14, 16. The temperature unit 24 can determine a temperature of the power semiconductor based on the operating voltage and the operating current.

[0029] FIG. 2 shows a schematic illustration of a circuitry for the power module 10 in FIG. 1. For purposes of simplification, only one power switch 12, 14, 16 is shown herein, which is in the form of a transistor (i.e. IGBT, MOSFET, HEMT). The transistor comprises a drain electrode 13, a source electrode 15, and a gate electrode 17. These three electrodes are each connected to a connection 38, 40, 42 on the driver 22 via a signal line. The driver 22 connected to the controller component 20, with which the driver 22 forms the control electronics 18.

[0030] There is a voltage measurement unit 26 in the power module 10 for determining the operating voltage of the power semiconductor. The operating voltage of the power semiconductor can be a drain-source voltage U.sub.ds, which can be tapped into directly in the form of a voltage drop at the power semiconductor. In the embodiment shown in FIG. 2, however, the operating voltage is a diode voltage U.sub.d measured by the voltage measurement unit 26, wherein the electrical potential that is tapped into lies at a point 28 on a cathode in a diode 32 facing away from an anode in the diode 32, which is upstream of the power switches 12, 14, 16. In particular, the diode 32 is located on a side of the drain electrode 13 facing away from the source electrode 15. The diode voltage U.sub.d is proportional to the drain-source voltage U.sub.ds. The diode 32 is preferably a decoupling diode for decoupling a high voltage at the power semiconductor. If the transistor is operated in its conducting phase, there is a high voltage at the power semiconductor. The high voltage is decoupled by means of the diode 32 to prevent damaging the driver 22 or the control electronics 18 with the high voltage.

[0031] The decoupling diode 32 can be located in a short circuit detection device 30, as shown in FIG. 2 by way of example, also comprising an RC link composed of an electric resistor 34 and a capacitor 36. Alternatively, the decoupling diode 32 can be integrated in an active damping unit, preferably in the form of a Zener diode.

[0032] The drain-source voltage U.sub.ds depends on the operating current I, in particular the drain-source current I.sub.ds, and the operating temperature T.sub.j in the power semiconductor. The temperature in the power semiconductor, when in operation, can be determined in a number of ways based on the detected operating voltage and operating current of the power semiconductor. According to one embodiment, the temperature unit 24 is configured to access a calibration database obtained by a pre-characterization of the power semiconductor. The calibration database is preferably a table that contains values for the operating voltage and the operating current in the power semiconductor recorded at numerous temperatures of the power semiconductor, and the values of the associated temperatures of the power semiconductors.

[0033] According to another embodiment, the temperature unit 24 is configured to access one or more calibration curves obtained by plotting the operating voltage as a function of the operating current at numerous temperatures of the power semiconductor, and/or by plotting the operating current as a function of the operating voltage at numerous temperatures of the power conductor. In this case, the calibration curve(s) contain one or more I-V curves. The pairs of values for the operating voltage and the operating current can be compared with the I-V curves in order to identify the I-V curve that contains the pair of values.

[0034] According to another embodiment, the temperature unit 24 is configured to determine the temperature of the power semiconductor based on the voltage-current pair of values using a mathematical function that describes the behavior of the temperature in relation to the operating voltage and the operating current in the power semiconductor.

[0035] FIG. 3 shows a schematic illustration of a method 100 for determining a temperature in the power module 10. In a first step 101 in the method 100, an operating voltage and an operating current are detected in the power semiconductor by the temperature unit 24 in the control electronics 18. In a second step 102 in the method 100, the temperature of the power semiconductor is determined based on the operating voltage and the operating current.

REFERENCE SYMBOLS

[0036] 10 power module

[0037] 12, 14, 16 power switches

[0038] 13 drain electrode

[0039] 15 source electrode

[0040] 17 gate electrode

[0041] 18 control electronics

[0042] 20 controller component

[0043] 22 driver

[0044] 24 temperature unit

[0045] 26 voltage measurement unit

[0046] 28 point

[0047] 30 short circuit detection device

[0048] 32 diode

[0049] 34 resistor

[0050] 36 capacitor

[0051] 38 40, 32 connections

[0052] 100 method

[0053] 101-103 steps