CORE-SHELL PARTICLE ENERGIZING METHOD, ELECTRICITY STORAGE LAYER MANUFACTURING METHOD, QUANTUM BATTERY AND MANUFACTURING METHOD THEREOF

Abstract

A quantum battery manufacturing method includes: providing a p-type semiconductor substrate including a first conductive substrate and a p-type semiconductor layer disposed on one surface of the first conductive substrate; providing an n-type semiconductor substrate including a second conductive substrate and an n-type semiconductor layer disposed on one surface of the second conductive substrate; and forming an electricity storage layer between the p-type semiconductor substrate and the n-type semiconductor substrate, and attaching two sides of the electricity storage layer respectively to the p-type semiconductor layer and the n-type semiconductor layer to form a quantum battery. The electricity storage layer is formed by heating a thermoplastic polymer to soften and become a liquid, mixing the liquid with energized core-shell particles, and coating a substrate with the mixture. Core-shell particles are disposed on a conductive substrate and irradiated with ultraviolet rays for energization.

Claims

1. A core-shell particle energizing method, comprising: (A1000) providing a plurality of core-shell particles, each of the core-shell particles comprising a semiconductor metallic oxide particle and an insulating oxide layer enclosing the semiconductor metallic oxide particle, an energy gap of the insulating oxide layer being larger than that of the semiconductor metallic oxide particle; (A2000) deposing the core-shell particles on a conductive substrate; and (A3000) irradiating the core-shell particles on the conductive substrate with ultraviolet rays to form a plurality of energized core-shell particles.

2. The core-shell particle energizing method according to claim 1, wherein the semiconductor metallic oxide particle comprises an n-type semiconductor metallic oxide particle.

3. The core-shell particle energizing method according to claim 2, wherein the semiconductor metallic oxide particle comprises an n-type semiconductor TiO.sub.2 particle.

4. The core-shell particle energizing method according to claim 1, wherein the insulating oxide layer contains SiO.sub.2.

5. An electricity storage layer manufacturing method, comprising: (B1000) providing a plurality of energized core-shell particles; (B2000) heating a thermoplastic polymer to soften and become a liquid; (B3000) mixing the energized core-shell particles with the liquid thermoplastic polymer to form an electricity storage layer precursor; and (B4000) coating a substrate with the electricity storage layer precursor to form an electricity storage layer.

6. The electricity storage layer manufacturing method according to claim 5, wherein the energized core-shell particles are formed by: providing a plurality of core-shell particles, each of the core-shell particles comprising a semiconductor metallic oxide particle and an insulating oxide layer enclosing the semiconductor metallic oxide particle, an energy gap of the insulating oxide layer being larger than that of the semiconductor metallic oxide particle; deposing the core-shell particles on a conductive substrate; and irradiating the core-shell particles on the conductive substrate with ultraviolet rays to form a plurality of energized core-shell particles.

7. The electricity storage layer manufacturing method according to claim 5, wherein the thermoplastic polymer has a melting point lower than 300° C.

8. A quantum battery manufacturing method, comprising: (C1000) providing a p-type semiconductor substrate comprising a first conductive substrate and a p-type semiconductor layer disposed on one surface of the first conductive substrate; (C2000) providing an n-type semiconductor substrate comprising a second conductive substrate and an n-type semiconductor layer disposed on one surface of the second conductive substrate; and (C3000) forming an electricity storage layer between the p-type semiconductor substrate and the n-type semiconductor substrate, and attaching two sides of the electricity storage layer respectively to the p-type semiconductor layer and the n-type semiconductor layer to form a quantum battery, wherein the electricity storage layer is formed by: providing a plurality of energized core-shell particles; heating a thermoplastic polymer to soften and become a liquid; mixing the energized core-shell particles with the liquid thermoplastic polymer to form an electricity storage layer precursor; and coating a substrate with the electricity storage layer precursor to form an electricity storage layer.

9. The quantum battery manufacturing method according to claim 8, wherein step C3000 comprises: (C3110) forming an electricity storage layer on another surface of the p-type semiconductor layer opposite to the first conductive substrate; (C3210) forming another electricity storage layer on another surface of the n-type semiconductor layer opposite to the second conductive substrate; and (C3310) attaching the electricity storage layers on the p-type semiconductor layer and the n-type semiconductor layer to each other.

10. The quantum battery manufacturing method according to claim 9, wherein each of the electricity storage layers has a thickness of 1-200 μm.

11. The quantum battery manufacturing method according to claim 8, wherein step C3000 comprises: (C3120) forming an electricity storage layer on one of another surface of the p-type semiconductor layer opposite to the first conductive substrate and another surface of the n-type semiconductor layer opposite to the second conductive substrate; and (C3320) attaching the electricity storage layer to the other of the another surface of the p-type semiconductor layer opposite to the first conductive substrate and the another surface of the n-type semiconductor layer opposite to the second conductive substrate in step C3120 on which the electricity storage layer is disposed.

12. The quantum battery manufacturing method according to claim 11, wherein the electricity storage layer has a thickness of 1-200 μm.

13. The quantum battery manufacturing method according to claim 8, wherein the p-type semiconductor layer is made of NiO.

14. The quantum battery manufacturing method according to claim 8, wherein the n-type semiconductor layer is made of WO.sub.3.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0029] FIG. 1 is a schematic flowchart of an embodiment of a core-shell particle energizing method of the present invention.

[0030] FIG. 2 is a schematic flowchart of an embodiment of an electricity storage layer manufacturing method of the present invention.

[0031] FIG. 3 is a schematic flowchart of an embodiment of a quantum battery manufacturing method of the present invention.

[0032] FIG. 4A is a schematic flowchart of a different embodiment of a quantum battery manufacturing method of the present invention.

[0033] FIG. 4B is a schematic diagram of an embodiment of a quantum battery of the present invention.

[0034] FIG. 5A is a schematic flowchart of a different embodiment of a quantum battery manufacturing method of the present invention.

[0035] FIG. 5B is a schematic diagram of a different embodiment of a quantum battery of the present invention.

[0036] FIG. 6A to FIG. 7C are measurement results of a quantum battery of the present invention.

[0037] FIG. 8A to FIG. 8C are reproducibility test results of a quantum battery of the present invention.

DETAILED DESCRIPTION

[0038] As shown in FIG. 1, a schematic flowchart of an embodiment, a core-shell particle energizing method of the present invention includes, for example, the following steps.

[0039] Step A1000. Provide a plurality of core-shell particles. Each of the core-shell particles includes a semiconductor metallic oxide particle and an insulating oxide layer enclosing the semiconductor metallic oxide particle. An energy gap of the insulating oxide layer is larger than that of the semiconductor metallic oxide particle. More specifically, the core-shell particles with a particle size of 1-100 nm, preferably 1-20 nm are manufactured by using, for example, a hydrophobic chemical vapor deposition method. As the “core”, the semiconductor metallic oxide particle includes an n-type semiconductor metallic oxide particle, preferably an n-type semiconductor TiO.sub.2 particle. As the “shell”, the insulating oxide layer contains SiO.sub.2. The amorphous SiO.sub.2 has an energy gap of 9.0 eV bigger than an energy gap of TiO.sub.2 of about 2.98 eV-3.26 eV.

[0040] Step A2000. Dispose the core-shell particles disposed on a conductive substrate. More specifically, the core-shell particles are disposed on a conductive substrate made of, for example, aluminum, copper, or stainless steel, and the conductive substrate is grounded.

[0041] Step A3000. Irradiate the core-shell particles on the conductive substrate with ultraviolet rays to form a plurality of energized core-shell particles. More specifically, the core-shell particles are disposed on the conductive substrate, and the semiconductor material is irradiated with ultraviolet rays. An electron of an electron-hole pair generated due to the photoelectric effect provides a sufficient electric field due to the built-in potential effect, transcends the high potential barrier of the insulating oxide layer, the shell of the core-shell particles, by using the tunneling effect, and then flows out of the conductive substrate to be grounded. Moreover, a new transient energy level is formed in the core-shell particles to provide an energizing function, so as to form an energizable state. The semiconductor material can be Si, Ge, SiC, or the like from Group IV of the periodic table, or a metallic oxide semiconductor material such as TiO.sub.2, WO.sub.3, or NiO.

[0042] As shown in FIG. 2, a schematic flowchart of an embodiment, an electricity storage layer manufacturing method of the present invention includes, for example, the following steps.

[0043] Step B1000. Provide a plurality of energized core-shell particles. More specifically, energized core-shell particles are formed through steps A1000 to A3000 by using the core-shell particle energizing method described above.

[0044] Step B2000. Heat a thermoplastic polymer to soften and become a liquid. More specifically, the thermoplastic polymer such as ethylene-vinyl acetate copolymer (EVA), polyvinyl butyral (PVB), polyacrylonitrile (PAN), polymethyl methacrylate (PMMA), or polyvinyl acetate (PVA or PVAc) is heated to 120° C. and transformed into a liquid. In a different embodiment, the thermoplastic polymer has a melting point lower than 300° C.

[0045] Step B3000. Mix the energized core-shell particles with the liquid thermoplastic polymer to form an electricity storage layer precursor. More specifically, the energized core-shell particles in step B1000 are mixed with the liquid thermoplastic polymer in step B2000 to form a precursor of an electricity storage layer before film forming.

[0046] Step B4000. Coat a substrate with the electricity storage layer precursor to form an electricity storage layer. More specifically, the substrate is coated, in such a manner as spin coating, with the electricity storage layer precursor formed in step B3000 to form an electricity storage layer.

[0047] Based on the above, the highest temperature in the manufacturing process only needs to heat the thermoplastic polymer to soften and become a liquid, and the energized core-shell particles are mixed with the thermoplastic polymer. A problem of whether a silicone insulating film can fully cover the TiO.sub.2 particles does not need to be taken into consideration when the thickness of the electricity storage layer is to be determined. Therefore, compared with the conventional coating and thermal decomposition method, the electricity storage layer manufacturing method of the present invention can be carried out at a relatively low temperature and manufacture the electricity storage layer of a relatively large thickness.

[0048] As shown in FIG. 3, a schematic flowchart of an embodiment, a quantum battery manufacturing method of the present invention includes the following steps.

[0049] Step C1000. Provide a p-type semiconductor substrate, including a first conductive substrate and a p-type semiconductor layer disposed on one surface of the first conductive substrate. More specifically, the p-type semiconductor layer is made of NiO. In an embodiment, the p-type semiconductor layer made of NiO is deposited, by using the plasma coating technology, on a conductive substrate made of, for example, aluminum, copper, or stainless steel.

[0050] Step C2000. Provide an n-type semiconductor substrate, including a second conductive substrate and an n-type semiconductor layer disposed on one surface of the second conductive substrate. More specifically, the n-type semiconductor layer is made of WO.sub.3. In an embodiment, the n-type semiconductor layer made of WO.sub.3 is deposited, by using the plasma coating technology, on a conductive substrate made of, for example, aluminum, copper, or stainless steel.

[0051] Step C3000. Form an electricity storage layer between the p-type semiconductor substrate and the n-type semiconductor substrate by using the electricity storage layer manufacturing method described above, and attach two sides of the electricity storage layer respectively to the p-type semiconductor layer and the n-type semiconductor layer to form a quantum battery.

[0052] Based on the above, the highest temperature in the manufacturing process only needs to heat a thermoplastic polymer to soften and become a liquid because the electricity storage layer is formed by using the electricity storage layer manufacturing method of the present invention described above, and energized core-shell particles are mixed with the thermoplastic polymer. A problem of whether a silicone insulating film can fully cover the TiO.sub.2 particles does not need to be taken into consideration when the thickness of the electricity storage layer is to be determined. Therefore, compared with the conventional coating and thermal decomposition method, the quantum battery manufacturing method of the present invention can be carried out at a relatively low temperature and manufacture the quantum battery with an electricity storage layer of a relatively large thickness.

[0053] How the electricity storage layer is formed between the p-type semiconductor substrate and the n-type semiconductor substrate can vary with requirements of design, manufacturing, and usage. As shown in FIGS. 4A and 4B, a schematic flowchart of an embodiment, step C3000 includes: (C3110) forming an electricity storage layer on another surface of the p-type semiconductor layer opposite to the first conductive substrate by using the electricity storage layer manufacturing method according to any one of claims 5 to 7; (C3210) forming another electricity storage layer on another surface of the n-type semiconductor layer opposite to the second conductive substrate by using the electricity storage layer manufacturing method according to any one of claims 5 to 7; and (C3310) attaching the electricity storage layers on the p-type semiconductor layer and the n-type semiconductor layer to each other. In other words, in this embodiment, the electricity storage layers are respectively formed on another surface of the p-type semiconductor layer opposite to the first conductive substrate and another surface of the n-type semiconductor layer opposite to the second conductive substrate. The electricity storage layer has a thickness of 1-200 μm. After being attached to each other, the two electricity storage layers are considered as a single electricity storage layer, with a thickness of 2-400 μm.

[0054] Further, a quantum battery 900′ of the present invention as shown in FIG. 4B can be formed through the embodiment as shown in FIG. 4A, and includes a p-type semiconductor substrate 100, an n-type semiconductor substrate 200, and an electricity storage layer 300. The p-type semiconductor substrate 100 includes a first conductive substrate 110 and a p-type semiconductor layer 120 disposed on one surface 111 of the first conductive substrate 110. The n-type semiconductor substrate 200 includes a second conductive substrate 210 and an n-type semiconductor layer 220 disposed on one surface 211 of the second conductive substrate 210. The electricity storage layer 300 is disposed between the p-type semiconductor substrate 100 and the n-type semiconductor substrate 200, and includes an electricity storage layer 300′ attached to the p-type semiconductor layer 120, and an electricity storage layer 300″ attached to the n-type semiconductor layer 220. The electricity storage layer 300′ and the electricity storage layer 300″ are attached to each other. The electricity storage layers 300′ and 300″ respectively include thermoplastic polymers 310′ and 310″, and a plurality of energized core-shell particles 320′ and 320″ mixed in the thermoplastic polymers. The electricity storage layer 300 has a thickness of 2-400 μm.

[0055] In another aspect, as shown in FIG. 5A, a schematic flowchart of an embodiment, step C3000 includes: (C3120) forming an electricity storage layer on one of another surface of the p-type semiconductor layer opposite to the first conductive substrate and another surface of the n-type semiconductor layer opposite to the second conductive substrate by using the electricity storage layer manufacturing method described above; and (C3320) attaching the electricity storage layer to the other of the another surface of the p-type semiconductor layer opposite to the first conductive substrate and the another surface of the n-type semiconductor layer opposite to the second conductive substrate in step C3120 on which the electricity storage layer is disposed. In other words, in this embodiment, the electricity storage layer is formed on only one of another surface of the p-type semiconductor layer opposite to the first conductive substrate and another surface of the n-type semiconductor layer opposite to the second conductive substrate. The electricity storage layer has a thickness of 1-200 μm.

[0056] Further, a quantum battery 900″ of the present invention as shown in FIG. 5B can be formed through the embodiment as shown in FIG. 5A, and includes a p-type semiconductor substrate 100, an n-type semiconductor substrate 200, and an electricity storage layer 300′. The p-type semiconductor substrate 100 includes a first conductive substrate 110 and a p-type semiconductor layer 120 disposed on one surface 111 of the first conductive substrate 110. The n-type semiconductor substrate 200 includes a second conductive substrate 210 and an n-type semiconductor layer 220 disposed on one surface 211 of the second conductive substrate 210. The electricity storage layer 300′ is disposed between the p-type semiconductor substrate 100 and the n-type semiconductor substrate 200, and has the two sides respectively attached to the p-type semiconductor layer 120 and the n-type semiconductor layer 220. The electricity storage layers 300′ includes a thermoplastic polymer 310′ and a plurality of energized core-shell particles 320′ mixed in the thermoplastic polymer 310′, and has a thickness of 1-200 μm.

[0057] Measurement of the Quantum Battery

[0058] The quantum battery 900′ of the embodiment as shown in FIG. 4B is measured. A first conductive substrate and a second conductive substrate are made of stainless steel, and NiO and WO.sub.3 are respectively sputtered on them to serve as the cathode and the anode. Core-shell particles (with TiO.sub.2 as the core and SiO.sub.2 as the shell) are irradiated with ultraviolet rays, and then are mixed into a melted liquid polymer at a ratio of 0.5 wt %. Details are as shown in table 1 and table 2 below. Charging and discharging properties are then measured by a constant current (CC). The results are as shown in FIG. 6A to FIG. 7C. The quantum battery is proved to have the charging and discharging properties of an energizing battery (add the description of the measurement results).

TABLE-US-00001 TABLE 1 1-1 1-2 1-3 Exposure time of 1 hr 1 hr 1 hr core-shell particles Area of sample About 2 cm × 4 cm About 2 cm × 4 cm About 2 cm × 4 cm to be tested Is NiO or NiO NiO NiO and WO.sub.3 WO.sub.3 coated? Film weight 0.5839 g 0.2938 g 0.5903 g and 0.5904 g Charging and +being connected to +being connected to +being connected to discharging NiO, and-being NiO, and-being NiO, and-being conditions connected to WO.sub.3 connected to WO.sub.3 connected to WO.sub.3 Being charged by 10 Being charged by 10 Being charged by 10 μA for 2 min μA for 2 min μA for 2 min Being discharged by Being discharged by Being discharged by −1 μA for 1 min −1 μA for 1 min −1 μA for 1 min 10 cycles 10 cycles 10 cycles

TABLE-US-00002 TABLE 2 2-1 2-2 2-3 Exposure time of 6.5 hr 6.5 hr 6.5 hr core-shell particles Area of sample About 2 cm × 4 cm About 2 cm × 4 cm About 2 cm × 4 cm to be tested Is NiO or NiO NiO NiO WO.sub.3 coated? Film weight 0.3006 g 0.1522 g 0.1522 g Charging and +being connected to +being connected to +being connected to discharging NiO, and-being NiO, and-being NiO, and-being conditions connected to WO.sub.3 connected to WO.sub.3 connected to WO.sub.3 Being charged by 10 Being charged by 10 Being charged by 10 μA for 2 min μA for 2 min μA for 5 min Being discharged by Being discharged by Being discharged by −1 μA for 1 min −1 μA for 1 min −1 μA for 3 min 10 cycles 10 cycles 10 cycles

[0059] Reproducibility Test

[0060] The quantum battery 900′ of the embodiment as shown in FIG. 4B is measured. A first conductive substrate and a second conductive substrate are made of stainless steel, and NiO and WO.sub.3 are respectively sputtered on them to serve as the cathode and the anode. Core-shell particles (with TiO.sub.2 as the core and SiO.sub.2 as the shell) are irradiated with ultraviolet rays for 1 h, and then are mixed into a melted liquid polymer, with which the cathode and the anode materials are coated. Tests of charging and discharging properties are then performed by a CC. The results are as shown in FIG. 8A to FIG. 8C. The quantum battery is proved to have the charging and discharging properties of an energizing battery.

[0061] Although the above description and figures have revealed the preferred embodiments of the present invention, it is necessary to understand that various additions, many modifications and substitutions can be used in the preferred embodiments of the present invention without departing from the spirit and scope of the principle of the present invention as defined in the claims attached. One of ordinary skill in the art of the present invention should understand that modifications of various forms, structures, arrangements, ratios, materials, elements and components can be made on the present invention. Therefore, the embodiments disclosed herein are used for illustrating the present invention rather than limiting the present invention. The scope of the present invention should be defined by the claims attached, covers legal equivalents thereof and is not limited to the foregoing description.

SYMBOL DESCRIPTION

[0062] 100 P-type semiconductor substrate [0063] 110 First conductive substrate [0064] 111 Surface [0065] 120 P-type semiconductor layer [0066] 200 N-type semiconductor substrate [0067] 210 Second conductive substrate [0068] 211 Surface [0069] 220 N-type semiconductor layer [0070] 300 Electricity storage layer [0071] 300′ Electricity storage layer [0072] 300″ Electricity storage layer [0073] 310′ Thermoplastic polymer [0074] 310″ Thermoplastic polymer [0075] 320′ Energized core-shell particle [0076] 320″ Energized core-shell particle [0077] 900 Quantum battery [0078] A1000 Step [0079] A2000 Step [0080] A3000 Step [0081] B1000 Step [0082] B2000 Step [0083] B3000 Step [0084] B4000 Step [0085] C1000 Step [0086] C2000 Step [0087] C3000 Step [0088] C3110 Step [0089] C3120 Step [0090] C3210 Step [0091] C3310 Step [0092] C3320 Step