Preparation of metal chalcogenides
11208334 · 2021-12-28
Assignee
Inventors
Cpc classification
C01G41/006
CHEMISTRY; METALLURGY
C01B19/002
CHEMISTRY; METALLURGY
B02C15/004
PERFORMING OPERATIONS; TRANSPORTING
C01P2004/20
CHEMISTRY; METALLURGY
C01P2002/72
CHEMISTRY; METALLURGY
International classification
B02C15/00
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A method embodiment involves preparing single metal or mixed transition metal chalcogenide using exfoliation of two or more different bulk transition metal dichalcogenides in a manner to form an intermediate hetero-layered transition metal chalcogenide structure, which can be treated to provide a single-phase transition metal chalcogenide.
Claims
1. A method for preparing a transition metal chalcogenide, comprising the step of exfoliating and concurrently self-combining two or more starting transition metal chalcogenides having compositions that differ with respect to at least one of a transition metal constituent and a chalcogen constituent to produce a hetero-layered structure having a mix of different layers with different compositions.
2. The method of claim 1 wherein exfoliating is conducted by mechanical processing of the starting transition metal chalcogenides together.
3. The method of claim 2 wherein the exfoliating is conducted by dry mechanical processing of the two or more starting transition metal chalcogenides together.
4. The method of claim 2 wherein dry mechanical processing is carried out in an inert gaseous atmosphere or gaseous atmosphere that is non-reactive towards the two or more starting transition metal chalcogenides and the produced hetero-layered structure.
5. The method of claim 2 wherein the exfoliating and self-combining are conducted by mechanical processing in the presence of a liquid medium.
6. The method of claim 5 wherein the liquid medium comprises at least one of isopropanol, water, dimethylsulphoxide, N-vinyl-pyrrolidinonc, N-methyl-pyrrolidinone, benzonitrile or any solvent that does not react with exfoliated chalcogenide materials under the processing conditions.
7. The method of claim 2 wherein mechanical processing is carried out using pestle and mortar, shaker ball mills of any configuration, planetary ball mills of any configurations, any type of laboratory or industrial grinders, sonication, or other milling, or grinding equipment.
8. The method of claim 1 wherein the exfoliating and sell-combining form the hetero-layered structure which is three dimensional.
9. The method of claim 1 wherein the exfoliated starting transition metal chalcogenides are concurrently mixed as they are exfoliated to self-combine to form the hetero-layered structure.
10. The method of claim 9 where the hetero-layered structure is converted into single-phase, chalcogenide material by subjecting it to thermal annealing treatment or mechanical processing including at least one of milling, grinding, cold or hot rolling, or extrusion, high hydrostatic pressure, combined with thermal annealing treatment.
11. The method of claim 10 wherein the thermal treatment is carried out by heating in the temperature range between 100° C. and 1500° C.
12. The method of claim 1 wherein the exfoliating and concurrent self-combing are carried out by ultrasonic irradiation.
13. The method of claim 1 including the further step of treating the hetero-layered structure to form a substantially single-phase, chalcogenide structure.
14. The method of claim 13 wherein the hetero-layered structure is substantially devoid of separate phases of the two or more starting transition metal chalcogenides.
15. The method of claim 13 wherein a substantially homogenous solid solution of the two or more starting transition metal chalcogenides is produced.
16. The method of claim 13 wherein the hetero-layered structure is treated by heat treating at a temperature for a time to achieve a substantially single-phase chalcogenide structure.
17. The method of claim 16 wherein heat treating is conducted at elevated temperatures between 100 and 1500 degrees C. in an inert or non-reactive gaseous atmosphere to produce a single-phase transition metal chalcogenide.
18. The method of claim 16 wherein the heat treating time is between 1 minute to 72 hours or longer.
19. The method of claim 16 wherein heat treating is conducted in an atmosphere comprising at least one of helium, argon, krypton, xenon, nitrogen, and any other gas, which shows no reactivity towards the starting transition metal chalcogenides or the hetero-layered structure.
20. The method of claim 13 including the further step of exfoliating the substantially single phase, chalcogenide structure.
21. The method of claim 1 wherein the starting transition metal chalcogenides comprise transition metal dichalcogenides selected from the group consisting of the group 4 transition metal dichalcogenides (M=Ti, Zr, Hf), group 5 transition metal dichalcogenides (M=V, Nb, Ta) or group 6 transition metal dichalcogenides (M=Cr, Mo, W), group 7 transition metal dichalcogenides (M=Mn, Re), group 10 transition metal dichalcogenides (M=Pd, Pt)J, group 11 transition metal dichalcogenides (Cu, Ag), group 12 transition metal dichalcogenides (Zn, Cd), group 13 transition metal dichalcogenides (e.g., M=1n, Ga) as well as lanthanum group metals chalcogenides (Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu).
22. The method of claim 1 that produce a hetero-layered transition metal chalcogenide having a chemical composition represented by (M.sub.aM.sup.2.sub.bM.sup.3.sub.c. . . n)(X.sub.dX.sup.2.sub.eX.sup.3.sub.f), where the formula unit includes two or more different metals (M), and X, X.sup.2 and X.sup.3 represent S, Se, or Te, whereby the sum of a+b+c+. . . n is between 1 and 3 and the sum of d+e+f is between 1 and 6.
23. The method of claim 1 where the hetero-layered structure comprises at least two or more of a mixed metal dichalcogenide material, a mixed metal tricbalcogenide material, a same metal dichalcogenide material, or a same metal trichalcogenide material.
24. The method of claim 23 the metal is selected from the group consisting of Ti, Zr, Hf, Nb, Ta, Mo, W, Re, Pd, Pt, In, Ga and Sn.
25. The method of claim 1 wherein the exfoliating and self-combining occur in the presence of at least one of graphite, black phosphorus, and boron nitride.
26. The method of claim 1 wherein exfoliating is conducted using at least one of ultrasonic irradiation, liquid-assisted mechanical processing that includes grinding or milling, electrical force liquid-phase electrochemical exfoliation, or chemical exfoliation.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF THE INVENTION
(28) The present invention provides method embodiments for preparing a transition metal chalcogenide material, such as a TMDC, by exfoliating two or more different starting TMDCs separately or together and combining the exfoliated products to form a transition metal chalcogenide structure having layers of different composition. The combining of the exfoliated products can be achieved in a passive manner by self-assembly in the event the TMDCs are exfoliated together and/or in an active manner by mixing the products together in the event the TMDCs are exfoliated separately.
(29) The present invention involves preparing a transition metal chalcogenide material starting for example from different, bulk, starting TMDCs wherein the method includes one or more solid-state or liquid-assisted exfoliation steps. For purposes of illustration and not limitation, Examples 1-3 set forth below describe dry mechanical exfoliation by mechanical processing to this end. For purposes of illustration and not limitation, Examples 4-7 describe liquid-assisted mechanical exfoliation by mechanical processing, which can be followed by liquid phase sonication, to this same end.
(30) In practice of embodiments of the present invention, the bulk TMDCs that are subjected to processing pursuant to the present invention can include the TMDCs selected from the group consisting of the group 4 TMDCs (M=Ti, Zr, Hf), group 5 TMDCs (M=V, Nb, Ta) or group 6 TMDCs (M=Cr, Mo, W), group 7 TMDCs (M=Mn, Re), group 10 TMDCs (M=Pd, Pt)], group 11 TMDCs (Cu, Ag), group 12 TMDCs (Zn, Cd), group 13 TMDCs (e.g., M=In, Ga) as well as lanthanum group metals chalcogenides (Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu).
(31) Practice of embodiments of the invention can produce mixed transition metal dichalcogenide materials that include two or more metals selected from the group consisting of metal is selected from the group consisting of Ti, Zr, Hf, Nb, Ta, Mo, W, Re, Pd, Pt, In, Ga and Cr and two or more chalcogen elements, namely, two or more of S, Se, and Te. Bulk layered chalcogenide materials that can be processed pursuant to the method embodiments can include, but are not limited to two or more bulk single-phase commercially available TMDCs as well as optional graphene, boron nitride, black phosphorus and other related layered materials that additionally and optionally may be incorporated into the composition of a final metal multi-chalcogenide composite product by exfoliation with the TMDCs wherein the composite structure is built-up of 2D exfoliated layers of the different materials.
(32) Examples 1-3 describe illustrative embodiments involving solid-state mechanical processing which can be conducted using pestle and mortar, shaker ball mills of any configuration, planetary ball mills of any configurations, any type of laboratory or industrial grinders, or other milling, or grinding equipment that can produce plastic, shear and other irreversible deformation as well as partial or complete exfoliation of the bulk TMDCs to an extent that achieves the results described below. The mechanical processing can be conducted under an inert or non-reactive gas atmosphere and at any temperature including below room temperature, at room temperature, and/or at elevated temperatures above room temperature such as to 100-1500° C. for appropriate times such as including, but not limited to, 1 minute to 72 hours or longer. The mechanical processing can be followed by heat treatment at elevated temperatures above room temperature such as 100-1500° C. A TMDC having a disordered, heterogeneous-layered structure or ordered, single-phase structure can be produced depending upon processing temperature and processing time. The ordered, single-phase TMDC can be a substantially homogenous solid solution of two or more different TMDCs.
(33) Examples 4-7 describe illustrative embodiments involving (1) mechanochemical exfoliation of two or more different TMDC materials in the same or different appropriate liquid environment using any exfoliation technique, step (2) subsequent generation of mixed hierarchical (layered) heterostructures, either by a spontaneous assembly in solution (e.g. mixing together of the dispersions formed in step (1)) or by using an additive assembly technique (e.g. layer-by-layer deposition, spin coating, ink jet printing etc. of the dispersions formed in step (1), and then step (3) reactive interlayer mixing and conversion of the hierarchical (layered) heterostructures obtained in step (2) into a single phase material, wherein reactive intermixing is effected by means of heat treatment, or mechanical working/processing, or high uniaxial external pressure, or a combination of external pressure and shear stress, or by cold or hot rolling or by combination of thereof. The invention envisions preparing a TMDC material using steps (1) to (3). The material so formed can include a mixed metal component.
(34) In illustrative embodiments, the exfoliating step is conducted by mechanical processing in the same or different liquid(s) to form dispersion(s) and the combining step involves spontaneous self-assembly (e.g. by mixing the dispersions together) or additive assembly (e.g. layer-by-layer deposition, spin coating, ink jet printing, etc. of the dispersions) of the exfoliated products of the dispersions.
(35) The intermediate 3D heterostructured TMDC material having hetero-layers (heterogeneous layers) can be converted to a single phase by subjecting the material to further processing including, but not limited to, thermal heat treatment (annealing), milling, grinding, cold or hot rolling, extrusion, high hydrostatic external pressure or combination thereof to obtain an ordered single-phase material.
(36) Practice of illustrative method embodiments enables simple, inexpensive, and scalable way of industrial production of single-phase materials described above. The liquid media employed for the liquid-assisted embodiment described above can be selected from the list of inexpensive, mass-produced organic solvents (e.g. isopropanol and other alcohols).
(37) The following Examples are offered to further illustrate embodiments of the invention without limiting the scope of method embodiments.
(38) Preparation of Three and Four Principal Element (Mixed Metal) TMDCs by Solid-State Mechanical Exfoliation and Annealing:
(39) Materials and Analytical Techniques.
(40) Ultra-high purity Ar (Matheson, 99.999%), ultra-high purity He (Matheson, 99.999%), MoS.sub.2 (Sigma-Alrdich, 99% purity), WS.sub.2 (Sigma-Alrdich, 99% purity), MoSe.sub.2 (Alfa Aesar, 99.9% purity), WSe.sub.2 (Alfa Aesar, 99.8% purity), and NbSe.sub.2 (Alfa Aesar, 99.8% purity) were used. As-received commercially available transition metal dichalcogenides, MoS.sub.2, WS.sub.2, MoSe.sub.2, WSe.sub.2 and NbSe.sub.2, were used as starting materials without further purification. TaS.sub.2 was prepared from Ta powder (99.99% purity) and S (Alfa Aesar, 99.9995% purity). In particular, TaS.sub.2 was prepared by ball milling a nearly stoichiometric mixture of tantalum and sulfur (5% excess). The milling was performed for 4 hours in a Fritsch, Pulverisette 7 milling machine, then followed by heat treatment of the resulting powder in a quartz tube sealed under 0.75 bar pressure of high purity helium for 5 days.
(41) Powder X-Ray Diffraction (XRD):
(42) The measurements were carried out using a PANalytical X'PERT powder diffractometer with an Xcelerator detector in the 20 range from 10° to 80° with 0.020 step size employing Cu-K.sub.α1 radiation (λ=0.15406 nm).
(43) Thermogravimetric Analysis (TGA):
(44) TGA data were collected using Netzsch Luxx STA 409 PG. About 10 mg of the investigated materials were placed in alumina crucibles and heated up under argon from room temperature to 1450° C. with a ramping rate of 10° C./min.
(45) HAADF-STEM and STEM-EDS Measurements:
(46) TEM experiments were performed on a Titan Themis (FEI) probe Cs-corrected TEM. High-resolution HAADF-STEM images were collected by the convergence semi-angle of 18 mrad and a collection semi-angle of 99-200 mrad at 200 kV. STEM-EDS analysis was carried out using a Super-X EDS detector attached to the Titan Themis. Focused Ion Beam (FIB) cross-sectioning was performed on a Helios Nanolab G3 UC dual-beam instrument (FEI). A liftout for TEM was carried out using standard in-situ TEM liftout procedures by means of the EZLift micromanipulator and Multi-Chem gas injection system [38, 39]. For the FIB cross-sectioning, a large agglomerate of particles was selected and covered with a protective layer of carbon that prevented the sputtering of the top surface of the sample during the experiment. Next, a trench was sputtered from both sides of the particle, resulting in a rectangular shape specimen, which afterwards was attached to a tungsten needle and thinned to electron transparency.
(47) Raman Spectroscopy: Powdered samples were spread on glass cover slips and analysed with a Horiba XploRA Raman microscope (HORIBA Scientific, Edison, N.J.) using 532-nm excitation (8.3.Math.10.sup.3 W/cm.sup.2) and a 100×(0.90 NA) objective. The detector was a front-illuminated Horiba Synapse EMCCD camera, and the acquisition time was 60 seconds. For each sample, the displayed spectrum was an average of 10 locations.
(48) High-Resolution X-Ray Photoelectron Spectra (XPS):
(49) Measurements were carried out for compositional analysis. A few milligrams of powder samples were mounted on a double-sided Scotch tape. XPS spectra for S 2p, Se 3d, Mo 3d and W 4f were acquired using physical electronic 5500 multi technique system with an Al-K.sub.α source. To compensate the charging effects, the binding energies of all peaks were corrected using standard carbon peak at 285 eV.
Example 1.—MoS.SUB.2.—WS.SUB.2 .System
(50) In a typical experiment, a total 1 g of the stoichiometric mixture of MoS.sub.2 powder and WS.sub.2 powder in the 1:1 molar ratio was transferred to a milling container together with eight 12 mm stainless steel balls (about 7 g each) so that ball-to-sample ratio was close to 56:1. After sealing the container under argon, ball milling was carried out for various time intervals at 600 rpm in a horizontal planetary mill Fritsch, Pulverisette 7. To facilitate the uniform milling and prevent caking of the powder during the processing, the milling mode was alternated between forward and reverse (30 min each) with an intermittent pause of 5 min. To investigate the effect of milling regime, the same amount of the sample was also processed in a high-energy mixer mill (SPEX, 8000M mill) in a stainless steel container with two 12.7 mm and four 6.35 mm grinding balls (ball-to-sample ratio=18:1). Ball milled powders were characterized using powder X-ray diffraction (XRD), differential scanning calorimetry and the thermogravimetric analysis (DSC/TGA), Raman spectroscopy, high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), scanning transmission electron microscopy energy dispersive spectrometry (STEM-EDS), scanning electron microscopy (SEM), scanning electron microscopy energy dispersive spectrometry (SEM-EDS) and scanning and transmission electron microscopies (SEM and TEM) as appropriate. In each example, milling was conducted at ambient temperature.
(51) XRD for the samples processed for different periods of time in planetary and mixer mills are shown in
(52) SEM evaluation of two samples milled for 15 hours in the planetary mill and the mixer mill are shown in
(53) Analysis by SEM-EDS showed the characteristic peaks for tungsten, molybdenum, sulfur and carbon. The latter coming from the sample holder grid. As can be seen in
(54) For samples processed either in the planetary or mixer mills, TEM (
(55) The HAADF-STEM studies confirm disordering in both milled samples (
(56) However, the Raman spectrum of the sample (
(57) In order to obtain a crystalline material, the sample milled in a planetary ball mill for 15 hours was heat treated at 950 degrees C. The annealing temperature of 950 degrees C. was selected based on the results of DCS/TGA analysis for pure binary TMDCs (
(58) The powder XRD pattern of the material heat treated for 16 hours in an argon atmosphere consisted of sharp crystalline peaks (
Example 2.—MoSe.SUB.2.—WS.SUB.2 .and MoS.SUB.2.—WSe.SUB.2 .Systems
(59) Processing of both MoS.sub.2—WSe.sub.2 and MoSe.sub.2—WS.sub.2 systems was performed in a planetary mill. For this purpose, 2 g of corresponding equimolar mixture was ball milled at 600 rpm in a planetary mill for 30 hours with eight 12 mm stainless steel balls. The XRD traces of the samples obtained (
(60) After the heat treatment at 1000 degrees C. for 16 hours in argon, both of the investigated materials crystalized into mixed TMDC systems with characteristic Bragg peaks (
(61) The Raman spectrum of the heat treated material confirms the XRD results (
(62) The high-resolution X-ray photoelectron spectroscopy (XPS) (
(63) It is worth noting that the frequency of milling has a distinct effect on its result. Thus, the XRD pattern of the materials processed for 30 hours in the planetary mill at 300 rpm (processing frequency of 5 Hz) is quite similar to that obtained after one hour of milling of the MoS.sub.2 and WSe.sub.2 mixture in a SPEX 8000M unit (processing frequency of ˜18 Hz.sup.1), and the XRD pattern of the sample processed for 4 hours in the SPEX 8000M mill closely resembles that of the powder generated in the Fritsch Pulverisette 7 planetary mill at 600 rpm (the processing frequency of 10 Hz) for 30 hours (
(64) The material of the milling equipment does not seem to affect the overall outcome of the synthetic process and a single-phase (Mo.sub.0.5W.sub.0.5)SSe could be successfully prepared in both silicon nitride and hardened steel vials after heat treatment. In the latter case, processed material contained up to 0.4 at. % of iron contamination after 30 hours of milling as determined by the X-ray fluorescence spectrometry (XRF). Similar amount of iron was also discovered in other TMDC samples prepared using the hardened steel milling sets.
(65) (Mo.sub.0.5W.sub.0.5)SSe crystallizes in space group P6.sub.3/mmc where Mo and W atoms randomly occupy the 2c position (⅓, ⅔, ¼) in the crystal lattice. The 4f site (⅓, ⅔, z) is filled randomly with S and Se. Shapes of Bragg reflections in the XRD pattern are highly anisotropic owing to distinctly plate-shaped particles and a nonrandom distribution of their orientations, which causes texturing and asymmetric broadening of the (h 0 l) Bragg peaks. Correcting for these effects requires spherical harmonics expansion to approximate crystallite shapes for Rietveld-based refinements. Results of which for this and other compounds described in this work are listed in Table 1.
(66) TABLE-US-00001 TABLE 1 Structural parameters of TMDCs derived from Rietveld refinements. The space group is P6.sub.3/mmc (#194). Metal atoms (Mo, W, Nb or Ta) occupy 2c (⅓, ⅔, ¼) site and chalcogens occupy 4f (⅓, ⅔, z) site. Standard deviations are given in parentheses. Column labelled R.sub.p lists profile residuals. Lattice parameters Phase Composition a, Å c, Å Chalcogen z/c R.sub.p Mo.sub.0.5W.sub.0.5S.sub.2 3.1628(1) 12.3581(4) 0.6229(2) 6.77 Mo.sub.0.5W.sub.0.5SSe 3.2239(5) 12.7348(3) 0.6169(2) 6.99 MoSSe 3.2246(4) 12.7069(2) 0.6168(1) 9.10 Mo.sub.0.4W.sub.0.2Nb.sub.0.4S.sub.0.8Se.sub.1.2 3.3073(2) 12.5718(9) 0.6151(2) 8.86 Mo.sub.0.6W.sub.0.2Ta.sub.0.2S.sub.0.8Se.sub.1.2 3.1754(1) 12.4158(2) 0.6186(3) 9.01 Mo.sub.0.25W.sub.0.25Nb.sub.0.25Ta.sub.0.25SSe 3.3015(2) 12.5189(9) 0.6223(3) 8.82
Example 3.—Three to Six Principal Element (Mixed Metal) TMDC Systems
(67) In a typical experiment, a 1 or 2 g sample of a physical mixture of two or more different binary TMDCs, taken in an appropriate stoichiometric proportion, was milled in either stainless steel milling container with eight 11.9 mm stainless steel balls, or in a silicon nitride vial with three 12.7 mm silicon nitride grinding balls using a two-station horizontal planetary mill (Fritsch, Pulverisette 7), or a shaker mill (SPEX 8000M) for various periods of time (1-30 hours). The milling containers were loaded and sealed under ultra-high purity argon in a glove box. To facilitate uniform milling and to prevent kinking of the powder during the processing, the milling mode of the planetary mill was alternated between forward and reverse rotations (30 min each) with an intermittent pause of 5 min. Subsequently, as-milled powders were pressed into pellets under argon in a glove box, placed in a quartz tube, which was further sealed under 0.75 bar of ultra-high purity helium. Typically, the heat treatment was conducted by ramping the temperature to 1000° C. and annealing the material for 16 hours or longer. Afterwards, samples were allowed to cool down to room temperature in the furnace. For analytical characterization, prepared materials were crushed in a mortar with a pestle and stored in a glove box under high-purity argon. The material of the milling equipment does not affect the overall outcome of the synthetic process. Also, according to X-ray fluorescence spectrometry (XRF), samples prepared using the hardened steel setup contained up to 0.4 at. % of iron contamination.
(68) Ball milling of the equimolar mixture of bulk MoS.sub.2 and MoSe.sub.2, followed by heat treatment of the resulting powder, reliably and reproducibly yields the known three-element chalcogenide, MoSSe. In this case, the presence of the starting materials in the as-milled powder was confirmed by both XRD and Raman spectroscopy, while a single-phase MoSSe forms after annealing at 1000° C. (
(69) Starting from bulk MoS.sub.2, WSe.sub.2 and NbSe.sub.2, a five-element compound with the nominal composition of (Mo.sub.0.4W.sub.0.2Nb.sub.0.4)S.sub.0.8Se.sub.1.2 (
(70) Further, (Mo.sub.0.6W.sub.0.2Ta.sub.0.2)S.sub.0.8Se.sub.1.2(
(71) Finally, the six-component compound, (Mo.sub.0.25W.sub.0.25Nb.sub.0.25Ta.sub.0.25)SSe (
(72) The Bragg peaks in the XRD patterns of all five- and six-principal element (mixed metal TMDCs remain substantially broadened even after a prolonged annealing, and a minor oxide impurity was detected in both Ta-containing samples. Reasonably assuming similarity of particle sizes and shapes in all three materials prepared from similar precursors, the observed Bragg peak broadening can be attributed to reduced crystallinity due to built-in strain. Since both Nb and Ta are larger than Mo and W, combining them in the same metallic layer of a multi-element TMDC should cause distinct distortion of the layers that propagates into the entire 3D-lattice.
(73) In achieving the results described above, the tangential component of ball-milling, which is accountable for the shearing action, appears to enable mechanical exfoliation of bulk TMDCs. At the same time, the exfoliated TMDCs can easily restore their 3D-arrangements by restacking, which is used to construct vertical 3D-heterostructures from exfoliated two dimensional TMDCs, graphene, h-BN and similar single-layer nanomaterials [49, 50]. Hence, it is quite feasible that mechanical exfoliation and spontaneous restacking of different TMDCs in a way similar to reshuffling a deck of playing cards, can produce 3D hetero-assemblies that appear uniform for EDS but, in fact, are heterostructured materials. The latter can further transform into uniform single-phase materials during subsequent heat treatment. However, the inventors do not intend to be bound by any above theory or above explanation.
(74) Experiments using lower-speed (300 rpm) ball milling of bulk MoS.sub.2 and WSe.sub.2 shed some additional light upon layer-reshuffling during ball-milling. Contrary to the more intense (600 rpm) processing, both MoS.sub.2 and WSe.sub.2 phases remain clearly distinguishable in the XRD patterns of the as-milled powders even after 30 hours of milling (
(75) The above examples demonstrate that the method embodiments of the invention described above enable easy and reliable preparation of diverse multi-principal element (mixed metal) TMDCs that were either unknown or barely accessible via conventional materials fabrication routes.
(76) Mechanochemical exfoliation coupled with stochastic restacking of binary precursors enables the generation of layered 3D heterostructures, and annealing of the latter generates single-phase multi-metal element materials. It is quite feasible that similar or closely related protocols can be applied to the preparation of other classes of materials, which are inaccessible or hard-to-reach through conventional synthetic routes.
(77) Another important outcome of practice of method embodiments is that mechanochemical treatment facilitates the formation of 3D-heterostructures from bulk TMDCs that may provide a path to prepare to a broad range of unusual hetero-structured nanomaterials.
(78) Finally, multi-principal element (mixed metal) materials synthesized using the method embodiments, represent a unique group of high-entropy-like systems that can serve as precursors of new 2D nanomaterials and 3D-heterostructures with future applications in electronics, electrochemical water splitting, and advanced lubrication, to name a few.
(79) Preparation of Multi-Principal Element (Mixed Metal) TMDC's by Liquid-Assisted Exfoliation:
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Example 4.—MoS.SUB.2.—WSe.SUB.2 .System
(81) Commercial MoS.sub.2 powder (Sigma-Alrdich, 99% purity) and WSe.sub.2 powder (Alfa Aesar, 99.8% purity) were used as starting materials. MoS.sub.2 and WSe.sub.2, 2 g of each powder, were separately ball milled in the presence of 1 ml of isopropanol for 30 hours using a Fritsch Pulverisette 7 planetary mill. The milling was carried out in separate milling vials sealed under argon with eight 12 mm stainless steel balls (about 7 g each) at 600 rpm. The milling mode was alternated between forward and reverse (30 min each) with an intermittent pause of 5 min to facilitate uniform shear milling.
(82) Obtained powders were dried under vacuum and corresponding amounts of the samples were weighed out to obtain stoichiometric molar ratio of 1MoS.sub.2:1 WSe.sub.2 with a total mass of 0.5 gram. Each sample was separately added to 40 grams of isopropanol and sonicated for 60 minutes in a FS20H Fisher Scientific sonicating machine. Thereafter, obtained suspensions were centrifuged at 3500 rpm for 15 min. Equal amounts of the obtained dispersions were mixed together, then the solvent was evaporated at 70° C., which led to the formation of a mixed solid assembly from exfoliated MoS.sub.2 and WSe.sub.2 phases as confirmed by XRD (
(83) Next, the obtained mixed solid material was annealed at 1000 degrees C. in a quartz tube under inert gas atmosphere for 16 hours. The XRD pattern of the heat treated sample showed a highly crystalline single-phase solid combining four elements in its structure with the general chemical formula of Mo.sub.1-xW.sub.xS.sub.2-2xSe.sub.2x (
Example 5.—MoS.SUB.2.—WSe.SUB.2 .System
(84) Starting MoS.sub.2 and WSe.sub.2 were prepared as described in Example 4. Subsequently, they were combined together in an equimolar ratio to obtain a 0.5 gram sample. The sample was suspended in 100 ml of isopropanol and sonicated for 10 hours in a FS20H Fisher Scientific sonicating machine. Next, 50 ml of isopropanol was added to the sonicated suspension, and it was centrifuged for 30 minutes at 3500 rpm. The liquid phase was separated and the precipitated material was dried in vacuum. The obtained dry solid material was annealed at 1000° C. for 16 hours in a quartz tube sealed under inert argon.
Example 6.—MoS.SUB.2.—WSe.SUB.2 .System
(85) A total 2 grams of the equimolar mixture of MoS.sub.2 powder and WSe.sub.2 powder was shear milled for 30 hours in 1 ml of isopropanol to facilitate their liquid-assisted exfoliation and restacking. The XRD pattern of the as-milled sample shown in
(86) In practicing these and other embodiments of the present invention, heat treating of the disordered layered mixed TMDCs can be conducted at elevated temperatures between 100 and 1500 degrees C. in an inert or non-reactive gas atmosphere to produce the ordered layered mixed TMDC. For purposes of illustration and not limitation, the heat treating time can be between 1 minute to 72 hours or longer. Heat treating can be conducted in an inert atmosphere comprise helium, argon, krypton, xenon, nitrogen, methane and any other gas, which shows no reactivity towards the binary TMDCs and the produced disordered layered mixed TMDC.
(87) The present invention further envisions a subsequent method step that involves exfoliating the ordered layered mixed TMDC (crystalline material) to produce a single layer or multi-layer crystalline nanostructure. Exfoliation can be conducted using sonication in a liquid or any other appropriate exfoliation technique.
(88) Although the present invention has been described with respect to certain illustrative embodiments and examples for purposes of illustration and not limitation, those skilled in the art will understand that changes and modifications can be made therein within the scope of the present invention as set forth in the appended claims.
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