Erbium-Doped Bismuth Oxide Film

Abstract

An erbium-doped bismuth oxide emitting light from high-intensity Er.sup.3+ ions is produced. Provided is a method of producing an erbium-doped bismuth oxide film including: a step of disposing a first sputtering target containing the bismuth oxide, a second sputtering target containing erbium oxide (Er.sub.2O.sub.3), and a substrate in a closed film forming chamber separately from each other; a step of setting the temperature of the substrate to room temperature, introducing H.sub.2O gas into the film forming chamber at a predetermined pressure, and supplying H.sub.2O gas in the vicinity of the substrate; a step of simultaneously sputtering the first sputtering target and the second sputtering target to deposit a part of the first sputtering target and a part of the second sputtering target on the substrate to form a precursor film; and a step of forming a crystalline film by heating the precursor film at a predetermined temperature.

Claims

1. A method of producing an erbium-doped bismuth oxide film comprising bismuth oxide (Bi.sub.2O.sub.3) as a base material and erbium (Er) added to the base material, the method comprising: a step of disposing a first sputtering target containing the bismuth oxide, a second sputtering target containing erbium oxide (Er.sub.2O.sub.3), and a substrate in a closed film forming chamber separately from each other; a step of setting the temperature of the substrate to room temperature, introducing H.sub.2O gas into the film forming chamber at a predetermined pressure, and supplying H.sub.2O gas in the vicinity of the substrate; a step of simultaneously sputtering the first sputtering target and the second sputtering target to deposit a part of the first sputtering target and a part of the second sputtering target on the substrate to form a precursor film; and a step of forming a crystalline film by heating the precursor film at a predetermined temperature.

2. The method of producing an erbium-doped bismuth oxide film according to claim 1, wherein simultaneously sputtering the first sputtering target and the second sputtering target is sputtering the first sputtering target with an electron cyclotron resonance (ECR) plasma source directed toward the first sputtering target.

3. The method of producing an erbium-doped bismuth oxide film according to claim 1, wherein the crystalline film contains an α phase of bismuth oxide when the predetermined pressure is from 1.1×10.sup.−2 Pa to 5.3×10.sup.−2 Pa.

4. The method of producing an erbium-doped bismuth oxide film according to claim 1, wherein the crystalline film contains the α phase of the bismuth oxide when the predetermined temperature is from 200° C. to 500° C.

5. The method of producing an erbium-doped bismuth oxide film according to claim 1, wherein the step of forming the crystalline film is performed in an oxygen gas atmosphere.

6. The method of producing an erbium-doped bismuth oxide film according to claim 1, wherein the substrate is silicon (Si) or silicon dioxide (SiO.sub.2).

7. The method of producing an erbium-doped bismuth oxide film according to claim 2, wherein the crystalline film contains an α phase of bismuth oxide when the predetermined pressure is from 1.1×10.sup.−2 Pa to 5.3×10.sup.−2 Pa.

8. The method of producing an erbium-doped bismuth oxide film according to claim 2, wherein the crystalline film contains the α phase of the bismuth oxide when the predetermined temperature is from 200° C. to 500° C.

9. The method of producing an erbium-doped bismuth oxide film according to claim 3, wherein the crystalline film contains the α phase of the bismuth oxide when the predetermined temperature is from 200° C. to 500° C.

10. The method of producing an erbium-doped bismuth oxide film according to claim 2, wherein the step of forming the crystalline film is performed in an oxygen gas atmosphere.

11. The method of producing an erbium-doped bismuth oxide film according to claim 3, wherein the step of forming the crystalline film is performed in an oxygen gas atmosphere.

12. The method of producing an erbium-doped bismuth oxide film according to claim 4, wherein the step of forming the crystalline film is performed in an oxygen gas atmosphere.

13. The method of producing an erbium-doped bismuth oxide film according to claim 2, wherein the substrate is silicon (Si) or silicon dioxide (SiO.sub.2).

14. The method of producing an erbium-doped bismuth oxide film according to claim 3, wherein the substrate is silicon (Si) or silicon dioxide (SiO.sub.2).

15. The method of producing an erbium-doped bismuth oxide film according to claim 4, wherein the substrate is silicon (Si) or silicon dioxide (SiO.sub.2).

16. The method of producing an erbium-doped bismuth oxide film according to claim 5, wherein the substrate is silicon (Si) or silicon dioxide (SiO.sub.2).

Description

BRIEF DESCRIPTION OF DRAWINGS

[0019] FIG. 1 is a conceptual diagram of sputtering apparatuses. FIG. 1(a) is a conceptual diagram of a sputtering apparatus with a single sputtering source, and FIG. 1(b) is a conceptual diagram of a sputtering apparatus with a double sputtering source.

[0020] FIG. 2 is a graph showing the spectral transmittance of Bi.sub.2O.sub.3:Er films obtained according to an embodiment of the present invention.

[0021] FIG. 3 is a graph showing a photoluminescence spectra of Bi.sub.2O.sub.3:Er films formed by changing the introduction pressure of oxygen gas as a control experiment.

[0022] FIG. 4 is a graph showing the photoluminescence emission spectra of a Bi.sub.2O.sub.3:Er film which was post-annealed at various temperatures after forming a film on a Si(100) substrate with an introduction pressure of H.sub.2O gas of 3.7×10.sup.−2 Pa.

[0023] FIG. 5 is a graph showing X-ray diffraction patterns measured for individual samples in FIG. 4.

[0024] FIG. 6 is a graph showing the photoluminescence emission spectra of a Bi.sub.2O.sub.3:Er film which was post-annealed at various temperatures after forming a film on a Si(100) substrate with an introduction pressure of H.sub.2O gas of 1.1×10.sup.−2 Pa.

[0025] FIG. 7 is a graph showing X-ray diffraction patterns measured for individual samples in FIG. 6.

[0026] FIG. 8 is a graph showing the photoluminescence emission spectra of a Bi.sub.2O.sub.3:Er film which was post-annealed at various temperatures after forming a film on a SiO.sub.2 substrate with an introduction pressure of H.sub.2O gas of 5.3×10.sup.−2 Pa.

[0027] FIG. 9 is a graph showing X-ray diffraction patterns measured for individual samples in FIG. 8.

DESCRIPTION OF EMBODIMENTS

[0028] One embodiment of the present invention is characterized in that H.sub.2O vapor gas (hereinafter, referred to as H.sub.2O gas) is used when the Bi.sub.2 O.sub.3:Er film is formed by the sputtering method. When the H.sub.2O molecules of the H.sub.2O gas introduced into the film forming chamber are ionized or decomposed in plasma, they generate H and OH radicals and H.sup.+ and OH.sup.− ions. H radicals and H.sup.+ ions act to reduce the Bi.sub.2O.sub.3:Er film, while OH radicals and OH.sup.− ions act to increase the degree of oxidation of the Bi.sub.2O.sub.3:Er film. The H radical and the OH radical, and the H.sup.+ ions and the OH.sup.− ions are produced in equal amounts, respectively, so that the reducing effect of the H radicals or H.sup.+ ions and the oxidation effect of the OH radicals or OH.sup.− ions are balanced, thus the oxidation degree of the obtained Bi.sub.2O.sub.3:Er film is kept moderate.

[0029] Further, in the plasma during sputtering film formation, in addition to H radicals, OH radicals, H.sup.+ ions, and OH.sup.− ions, H.sub.2O molecules of H.sub.2O gas themselves are also taken into the thin film. In order to optically activate the Er.sup.3+ ions and bring them into a light emission active state, after a Bi.sub.2O.sub.3:Er film is formed by a sputtering method, the Bi.sub.2O.sub.3:Er film must be post-annealed to carry out crystallization. During this post-annealing process, hydrogen atoms associate with each other in the Bi.sub.2O.sub.3:Er film and are desorbed, and as a result, only oxygen atoms remain. Therefore, when the introduction pressure of H.sub.2O gas is high, that is, when the amount of H.sub.2O molecules taken into the Bi.sub.2O.sub.3:Er film is large, the Bi.sub.2O.sub.3:Er film after the post-annealing treatment is more oxidized, while when the introduction pressure of H.sub.2O gas is low, that is, when the amount of H.sub.2O molecules taken into the Bi.sub.2O.sub.3:Er film is small, the film is in a reduced state. Therefore, in order to keep the degree of oxidation of the Bi.sub.2O.sub.3:Er film more moderate, it is necessary to adjust the pressure of the H.sub.2O gas introduced into the film forming chamber of the sputtering apparatus to a predetermined value.

[0030] FIG. 1 is a conceptual diagram of sputtering apparatuses 1 and 11. FIG. 1(a) illustrates a case where a single sputtering source is provided, and FIG. 1(b) illustrates a case where a double sputtering source is provided.

[0031] In the related art, Bi.sub.2O.sub.3:Er film is obtained by a sputtering apparatus 1 including a single sputtering source as illustrated in FIG. 1(a). The sputtering target 3 is Bi.sub.2O.sub.3 containing a predetermined amount of Er atoms. An Er:Bi.sub.2O.sub.3 film is formed on the substrate 5 using the single sputtering target 3.

[0032] Here, the sputtering apparatus 1 will be described. The inside of the film forming chamber 2 of the sputtering apparatus 1 is evacuated to a vacuum, and inside the film forming chamber 2, the sputtering target 3, the holding mechanism 4, the substrate 5, a heater (not shown), a gas introduction port 6, and a variable leak valve 7 are provided.

[0033] A substrate 5 is disposed at a position facing the sputtering target 3, and the substrate 5 is placed on a heater. Film formation can be performed while heating the substrate 5 with a heater, or post-annealing can be performed after the film formation is completed and the film forming chamber 2 is evacuated.

[0034] The sputtering apparatus 1 includes a gas introduction port 6 and a variable leak valve 7 which are connected to the film forming chamber 2 from the outside. Argon gas as a sputtering gas is introduced into the film forming chamber 2 through the gas introduction port 6. Further, the H.sub.2O gas as an oxygen source is introduced into the film forming chamber 2 through the variable leak valve 7.

[0035] The sputtering target 3 is held by the holding mechanism 4 such that the distance to the substrate 5 and the like are appropriate. The sputtering apparatus 1 further includes a mechanism (not shown) for generating a high frequency electric field or magnetic field between the target 3 and the substrate 5 or in the vicinity of the substrate 5 in order to realize a predetermined condition for sputtering film formation. Here, the H.sub.2O gas introduced into the film forming chamber 2 through the variable leak valve 7 generates oxygen radicals in the plasma state, and the degree of oxidation of the Bi.sub.2O.sub.3:Er film can be adjusted.

[0036] Here, in the case where the H.sub.2O gas is introduced to form the Bi.sub.2O.sub.3:Er film, the sputtering film formation is performed at room temperature without heating the substrate so that only hydrogen is not selectively desorbed from the H.sub.2O molecules taken in the Bi.sub.2O.sub.3:Er film.

[0037] A Bi.sub.2O.sub.3:Er film can be formed by using the sputtering apparatus 1 shown in FIG. 1(a). However, the Er content in the chemical composition of the Bi.sub.2O.sub.3:Er film formed on the substrate 5 is unfortunately fixed according to the chemical composition of the sputtering target 3.

EXAMPLE

[0038] An embodiment of the present invention will be described in detail below. The embodiment of the present invention is given by way of example and not by way of limitation. Further, the present invention may be modified or replaced without departing from the scope of the present invention.

[0039] In one embodiment of the present invention, a Bi.sub.2O.sub.3:Er film is formed using the sputtering apparatus 11 including the double sputtering source shown in FIG. 1(b) so as to compensate for the above disadvantages and to freely adjust the Er content in the Bi.sub.2O.sub.3:Er film.

[0040] The above-described sputtering apparatus 1 of FIG. 1(a) has a single sputtering target 3 in the film forming chamber 2, while the sputtering apparatus 11 shown in FIG. 1(b) includes two sputtering targets 13a and 13b in the film forming chamber 12. The sputtering apparatus 11 includes Bi.sub.2O.sub.3 as a sputtering target 13a for the sputtering source A and Er.sub.2O.sub.3 as a sputtering target 13b for the sputtering source B, and is capable of simultaneously sputtering both of them and changing the content of Er atoms in the Er:Bi.sub.2O.sub.3 film deposited on the substrate 15 according to the sputtering power (electric power) applied to the respective sputtering targets 13a and 13b.

[0041] At this time, the density of each particle scattered from the sputtering targets 13a and 13b on the surface of the substrate 15 is inversely proportional to the square of the distance from the sputtering targets 13a and 13b, and therefore varies depending on the position of the substrate 15 in the horizontal plane. Therefore, in order to equalize the composition distribution of the Er:Bi.sub.2O.sub.3 film, it is preferable that the substrate 15 be rotated about an axis that is substantially perpendicular to the horizontal plane of the substrate 15 and penetrates the horizontal plane of the substrate 15 during the deposition of the Er:Bi.sub.2O.sub.3 film on the substrate 15.

[0042] Further, according to the configuration of the sputtering apparatus 11 illustrated in FIG. 1(b), target particles can be generated by using different sputtering methods for each of the sputtering targets 13a and 13b. In the present embodiment, an electron cyclotron resonance (hereinafter referred to as ECR) plasma source was directed toward the Bi.sub.2O.sub.3 target 13a, and a radio frequency (hereinafter referred to as RF) magnetron source was installed toward the Er.sub.2O.sub.3 target.

[0043] The microwave input power for generating ECR plasma was fixed at 500 W, and the RF power applied to the Er.sub.2O.sub.3 target was fixed at 500 W. The power applied to the RF magnetron source was set to 40 W.

[0044] The inside of the film forming chamber 12 of the sputtering apparatus 11 was evacuated by a turbo molecular pump (not shown) installed as an exhaust pump outside, and the degree of vacuum inside the film forming chamber 12 was 1×10.sup.−4 Pa. The amount of argon gas introduced into the film forming chamber 12 was adjusted to 0.12 Pa using a mass flow controller (not shown) installed in the gas introduction port 16.

[0045] Simultaneously with the introduction of the argon gas into the film forming chamber 12, the H.sub.2O gas is introduced into the film forming chamber 12 from the variable leak valve 17, and the introduction pressure was set to a value of 1×10.sup.−2 Pa to 5.3×10.sup.−2 Pa.

[0046] The concentration of Er contained in the Bi.sub.2O.sub.3:Er film obtained under the above sputtering film formation conditions was 2 at. % with respect to Bi. The concentration of Er was quantified by a fluorescent X-ray analysis method.

[0047] As the substrate 15, a 4-inch Si (100) substrate or a Si (100) substrate in which a silicon thermal oxide film (SiO.sub.2) having a thickness of 1 μm is formed as an upper layer was used. Further, as a sample for measuring the spectral transmittance of the Bi.sub.2O.sub.3:Er film, a Bi.sub.2O.sub.3:Er film was formed on a glass substrate.

[0048] The post-annealing temperature was changed in a range from room temperature to 600° C. After forming the Bi.sub.2O.sub.3:Er film, a plurality of 12 mm square samples were cut out from a region of the substrate 15 where the Er concentration was constant, and post-annealing treatment was performed on samples in an oxygen gas atmosphere at various temperatures.

[0049] The emission spectrum of the Bi.sub.2O.sub.3:Er film by photoluminescence (hereinafter referred to as PL spectrum) was obtained by using a semiconductor laser having a wavelength of 532 nm as excitation light and measuring the near-infrared emission intensity in the wavelength range of 1438 nm to 1600 nm by a CCD detector. The infrared light emission measured here is caused as follows: Er.sup.3+ ions are excited by excitation light to cause energy transition from .sup.4I.sub.15/2 to .sup.2H.sub.11/2, and Er.sup.3+ ions are released to emit light along with the energy transition from .sup.4I.sub.13/2 to .sup.4I.sub.15/2.

[0050] The produced phase of the Bi.sub.2O.sub.3:Er film was identified by measuring an X-ray diffraction pattern using an X-ray diffractometer. The measuring method is ω-2θ scanning.

[0051] In addition, as a control experiment, film formation was performed under the condition that the gas introduced from the variable leak valve 17 into the film forming chamber 12 was oxygen gas instead of H.sub.2O gas. The oxygen gas introduction pressure at this time was set to a value of 4.3×10.sup.−2 Pa to 8.6×10.sup.−2 Pa.

[0052] FIG. 2 is a graph showing the spectral transmittance of the Bi.sub.2O.sub.3:Er films obtained according to the embodiment of the present invention. The introduction pressure of H.sub.2O gas introduced into the film forming chamber 12 was set to 1.3×10.sup.−2 Pa, 2.7×10.sup.−2 Pa, and 5.3×10.sup.−2 Pa. The Bi.sub.2O.sub.3:Er films used for the measurement of the spectral transmittance are samples that have not been post-annealed.

[0053] In the spectral transmittance shown in FIG. 2, in common to all levels, a periodic variation amount was superimposed on the spectral transmittance of the Bi.sub.2O.sub.3:Er films themself due to optical interference at the interface between the Bi.sub.2O.sub.3:Er films and the glass substrate. When the introduction pressure of H.sub.2O gas was the lowest level, that is, 1.3×10.sup.−2 Pa, the spectral transmittance in the visible region was lower than other levels. This indicates that the Bi.sub.2O.sub.3:Er films contains Bi atoms that are not completely terminated with oxygen. Further, the wavelength at the absorption edge is 380 nm regardless of the value of the introduction pressure of H.sub.2O gas. When the introduction pressure of H.sub.2O gas is 2.7×10.sup.−2 Pa and 5.3×10.sup.−2 Pa higher than 1.3×10.sup.−2 Pa, the spectral transmittance at wavelengths longer than 800 nm periodically changes in the range from 75% to 100%. This result shows that the spectral transmittance of the Bi.sub.2O.sub.3:Er films is a constant value in the range from 75% to 100% at a wavelength longer than 800 nm, except for the effect of optical interference at the interface between the Bi.sub.2O.sub.3:Er films and the glass substrate, and suggests that the films are sufficiently transparent.

[0054] FIG. 3 is a graph showing PL spectra of Bi.sub.2O.sub.3:Er films formed by introducing oxygen gas into the film forming chamber 12 and changing the introduction pressure of oxygen gas. The post-annealing treatment temperature for the sample measured at this time was 450° C., which is common to all levels.

[0055] The emission intensity in the vicinity of 1540 nm, which shows the emission from Er.sup.3+ ions, hardly depends on the introduction pressure of oxygen gas during film formation, and is about 40 kilocounts at any level. This indicates that the degree of oxidation of the Bi.sub.2O.sub.3:Er film with an Er concentration of 2 at. % formed on a Si (100) substrate is unlikely to depend on the introduction pressure of oxygen gas. That is, it means that it is difficult to control the degree of oxidation of the Bi.sub.2O.sub.3:Er film even if the introduction pressure of oxygen gas is adjusted.

[0056] FIG. 4 is a graph showing a photoluminescence emission spectra of a Bi.sub.2O.sub.3:Er film which was post-annealed at various temperatures after forming a film on a Si(100) substrate with an H.sub.2O gas introduction pressure of 3.7×10.sup.−2 Pa. The post-annealing treatment temperature for the samples measured at this time was from 200° C. to 500° C.

[0057] In particular, when post-annealing treatment was performed at 400° C., high-intensity light emission of about 360 kilocounts was exhibited. Further, the post-annealing treatment at 200° C. and 300° C. showed a significantly lower emission intensity than the post-annealing treatment at 400° C., but the shape of the emission spectrum was similar to that in the case of performing the post-annealing treatment at 400° C. On the other hand, when post-annealing treatment was performed at 350° C., the spectral shape of the emission peak was different from those. Further, when the post-annealing treatment was performed at 450° C. and 500° C., the emission intensity was extremely reduced.

[0058] The reason why the emission intensity changes irregularly with respect to the post-annealing temperature is that when H.sub.2O gas is introduced from the variable leak valve 17 into the film forming chamber 12, the H.sub.2O gas is ubiquitous in the film forming chamber 12, and the concentration of the supplied H.sub.2O gas becomes nonuniform with respect to the position on the substrate 15.

[0059] Further, as can be seen from the PL spectrum when the post-annealing treatment is performed at 400° C., the emission spectrum of Er.sup.3+ ions has some fine structures. This is due to the crystal field splitting due to the crystal structure of the Bi.sub.2O.sub.3:Er film.

[0060] FIG. 5 is a graph illustrating an X-ray diffraction patterns measured for individual samples in FIG. 4. As a typical crystal structure of Bi.sub.2O.sub.3, four kinds of crystal structures of α, β, γ, and δ are known (NPLs 1 to 4), and along with the crystallization of the Bi.sub.2O.sub.3:Er film, a single crystal phase or a mixture of two or more thereof forms a crystal phase. In FIG. 5, it can be seen that the crystal phase of the Bi.sub.2O.sub.3:Er film is the α phase when the post annealing treatment temperature is low, and shifts to the γ phase as the post annealing treatment temperature is increased. Specifically, the α phase was formed when the post annealing treatment temperature was 200° C. and 300° C., and the mixed phase of the α phase and the γ phase was formed when the post annealing temperature was 400° C.

[0061] Considering together with the results shown in FIG. 4, it can be seen that when the post-annealing treatment is performed at a temperature at which the α phase is generated, light emission from Er.sup.3+ ions with high intensity is exhibited. Further, when the post-annealing temperature was 450° C. and 500° C., it is found that a single phase in which only the γ phase exists was generated, and at this time, extremely weak light emission was exhibited. This result suggests that the inclusion of the α phase in the crystal phase of the Bi.sub.2O.sub.3:Er film is the condition for light emission from the high intensity Er.sup.3+ ion.

[0062] FIG. 6 is a graph showing the PL spectra of the Bi.sub.2 O.sub.3:Er film which was post-annealed at various temperatures after forming a film on a Si(100) substrate with an introduction pressure of H.sub.2O gas of 1.1×10.sup.−2 Pa. When the post-annealing temperature was 400° C. and 450° C., high-intensity light emission of about 450 to 500 kilocounts was exhibited. The maximum emission intensity in these cases is close to the maximum emission intensity when the introduction pressure of H.sub.2O gas shown in FIG. 4 is 3.7×10.sup.−2 Pa and the post-annealing temperature is 400° C., and is an order of magnitude higher than the emission intensity in the case of forming a film by introducing oxygen gas shown in FIG. 3. This indicates that the emission intensity from Er.sup.3+ ions is increased by about one digit by changing the oxygen source during film formation from oxygen gas to H.sub.2O gas.

[0063] FIG. 7 is a graph showing X-ray diffraction patterns measured for samples in FIG. 6. The α phase was generated when the post-annealing temperature was from 200° C. to 450° C., and the γ phase was further generated when the post-annealing temperature is from 350° C. to 450° C.

[0064] Considering together with the results shown in FIG. 6, this result shows that even when the introduction pressure of H.sub.2O gas is 1.1×10.sup.−2 Pa, the Er.sup.3+ ions solid-dissolved or substituted in the Bi.sub.2O.sub.3 crystal forming the α phase or Er.sup.3+ ions bound to the Bi.sub.2O.sub.3 crystal surface forming the α phase are optically active.

[0065] FIG. 8 is a graph showing PL spectra of a Bi.sub.2O.sub.3:Er film which was post-annealed at various temperatures after forming a film on a SiO.sub.2 substrate with an introduction pressure of H.sub.2O gas of 5.3×10.sup.−2 Pa. When the post-annealing temperature was 300° C., no light emission was observed, while when the post-annealing temperature was 350° C. or higher, light emission showing an intensity of 150 to 300 kilocounts was observed. Similar to the case shown in FIG. 6 where the introduction pressure of H.sub.2O gas was 1.1×10.sup.−2 Pa, the emission intensity when the post-annealing temperature was 500° C. was lower than the emission intensity of the case where the post-annealing temperature was 450° C. This indicates that the emission intensity from Er.sup.3+ ions does not monotonically increase with the post-annealing temperature.

[0066] In summary of the results shown in FIG. 4 and FIG. 6, it can be seen that the maximum emission intensity of 300 kilocounts or more can be obtained by adjusting the post-annealing temperature to a predetermined value regardless of whether the substrate 15 is Si(100) or SiO.sub.2. In other words, these results show that when the H.sub.2O gas is introduced to form a film, a high emission intensity can be obtained regardless of the type of substrate.

[0067] FIG. 9 is a graph illustrating X-ray diffraction patterns measured for samples in FIG. 8. When the post-annealing temperature was 200° C. and 300° C., only the δ phase was formed and no emission was observed at this time. When the post annealing temperature was 350° C. and 400° C., the Bi.sub.2O.sub.3:Er film had a crystal structure in which the α phase is mixed in addition to the δ phase. Further, when the post-annealing temperature was 450° C. or higher, only the α phase was generated.

[0068] Considering the results shown in FIGS. 8 and 9 together, it can be seen that the threshold value of the post-annealing temperature at which the Er.sup.3+ ions emit light matches the threshold value of the post-annealing temperature at which the α phase is generated. That is, it is understood that the existence of the α phase of Bi.sub.2O.sub.3 in the Bi.sub.2O.sub.3:Er film is a necessary condition for light emission from Er.sup.3+ ions.

[0069] The reason for these results is likely that Er.sup.3+ ions are easily located at the site capable of emitting light in the Bi.sub.2O.sub.3 crystal due to the influence of hydrogen contained in the H.sub.2O gas. It is also possible that the emission efficiency of the Er.sup.3+ ions is increased because the energy level created by hydrogen contained in the H.sub.2O gas in the band gap of the Bi.sub.2O.sub.3 crystal and the 4f level of the Er.sup.3+ ions are close to each other and resonate.

INDUSTRIAL APPLICABILITY

[0070] The erbium-doped bismuth oxide film is expected to be used as an optical component having an optical amplification effect similar to that of an erbium-doped optical fiber.

REFERENCE SIGNS LIST

[0071] 1, 11 Sputtering apparatus [0072] 2, 12 Film forming chamber [0073] 3, 13a, 13b Sputtering target [0074] 4, 4a, 4b Holding mechanism [0075] 5, 15 Substrate [0076] 6, 16 Sputtering gas introduction port [0077] 7, 17 Variable leak valve