TUNING APPARATUS FOR MINIMUM DIVERGENCE ION BEAM

Abstract

An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out scanned beam into parallel shifting scanning ion beam. For applications needing not only a mean incident angle, but highly-aligned ion incident angles and a tight angular distribution, a slit apparatus is positioned at horizontal and/or vertical front focal points of the parallelizing lens. Minimum horizontal and/or vertical angular distributions of the ion beam on the workpiece are attained by controlling a beam focusing lens upstream of the scanning element for the best beam transmission through the slit system.

Claims

1. An ion implantation system for implanting ions into a workpiece, the ion implantation system comprising: an ion source configured to form an ion beam; a mass analyzer configured to mass analyze the ion beam; a scanning element configured to scan the ion beam in a horizontal direction, wherein the ion beam has a respective focal point in each of the horizontal direction and a vertical direction; a slit apparatus having an aperture selectively positioned downstream of the scanning element at one or more of the respective focal points of the ion beam in the horizontal direction and vertical direction; and parallelizing optics positioned downstream of the slit apparatus and configured to parallelize the ion beam, whereby an angular distribution in one or more of the horizontal direction and vertical direction is minimized.

2. The ion implantation system of claim 1, wherein the ion beam comprises a pencil beam or a spot beam.

3. The ion implantation system of claim 1, wherein the slit apparatus comprises a plate having the aperture defined.

4. The ion implantation system of claim 3, further comprising a translation apparatus configured to selectively position the plate.

5. The ion implantation system of claim 4, wherein the translation apparatus comprises a rotation apparatus configured to selectively rotate the plate into and out of a path of the ion beam.

6. The ion implantation system of claim 4, wherein the translation apparatus comprises a linear translation apparatus configured to selectively linearly translate the plate into and out of a path of the ion beam.

7. The ion implantation system of claim 1, wherein the scanning element is configured to define a fanned-out scanned beam.

8. The ion implantation system of claim 1, further comprising: a quadrupole lens upstream of the scanning element; and a controller, wherein the scanning element is configured to provide an angular distribution of the ion beam in the horizontal direction and vertical direction, and wherein the controller is configured to control one or more of the scanning element, the quadrupole lens, and a position of the aperture of the slit apparatus to maximize a beam current of the ion beam and minimize the angular distribution of the ion beam at the workpiece.

9. The ion implantation system of claim 1, further comprising a controller configured to control one or more of the ion source, mass analyzer, scanning element, slit apparatus, and parallelizing optics to maximize a beam current of the ion beam and minimize an angular distribution of the ion beam at the workpiece.

10. An ion implantation system for implanting ions into a workpiece, the ion implantation system comprising: an ion source configured to form an ion beam; a mass analyzer configured to mass analyze the ion beam; a scanning element configured to scan the ion beam from a scan vertex in a horizontal direction; parallelizing optics downstream of the scanning element and configured to parallelize the ion beam, whereby the parallelizing optics define one or more of a vertical focal point of the ion beam in a vertical direction and a horizontal focal point of the ion beam in the horizontal direction, wherein the vertical focal point and horizontal focal point are upstream of the parallelizing optics; and a slit apparatus having an aperture selectively positioned at one or more of the scan vertex and the vertical focal point of the ion beam, whereby an angular distribution of the ion beam in one or more of the horizontal direction and vertical direction is minimized.

11. The ion implantation system of claim 10, wherein the ion beam comprises a pencil beam or a spot beam.

12. The ion implantation system of claim 10, wherein the slit apparatus comprises a plate having the aperture defined therein.

13. The ion implantation system of claim 12, further comprising a translation apparatus configured to selectively position the plate.

14. The ion implantation system of claim 13, wherein the translation apparatus comprises a rotation apparatus configured to selectively rotate the plate into and out of a path of the ion beam.

15. The ion implantation system of claim 13, wherein the translation apparatus comprises a linear translation apparatus configured to selectively linearly translate the plate into and out of a path of the ion beam.

16. The ion implantation system of claim 10, wherein the scanning element is configured to provide a fanned-out scanned beam.

17. The ion implantation system of claim 10, further comprising a quadrupole lens positioned upstream of the slit apparatus, wherein the quadrupole lens is configured to provide horizontal and vertical focusing at the aperture to minimize an angular distribution of the ion beam in the respective horizontal direction and vertical direction.

18. The ion implantation system of claim 17, further comprising a controller, wherein the controller is configured to control one or more of the quadrupole lens, the paralleling optics, and a position of the aperture of the slit apparatus to maximize a beam current of the ion beam and minimize the angular distribution of the ion beam at the workpiece.

19. A method for minimizing an angular distribution of an ion beam on a workpiece, the method comprising: focusing the ion beam at a focal point upstream of a corrector magnet; selectively positioning a slit at the focal point of the ion beam; and controlling a quadrupole lens that is upstream of the slit, wherein a beam current of the ion beam is maximized and the angular distribution of the ion beam is minimized at the workpiece positioned downstream of the corrector magnet.

20. The method of claim 19, wherein controlling the quadrupole lens independently alters the focal point to maximize a transmission of the ion beam through the slit.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0020] FIG. 1 illustrates an example ion implantation system in accordance with an aspect of the present disclosure.

[0021] FIG. 2 is a schematic showing a finite beam angular distribution in accordance with an aspect of the present disclosure.

[0022] FIG. 3 is a schematic of a scanned ion beam illustrating angle of implantation in accordance with an aspect of the present disclosure.

[0023] FIG. 4 is a schematic of a scanned ion beam illustrating angle of implantation incorporating a slit for horizontal divergence in accordance with an aspect of the present disclosure.

[0024] FIG. 5 is a schematic of a scanned ion beam illustrating a vertical divergence slit in accordance with an aspect of the present disclosure.

[0025] FIG. 6A is a simplified perspective view of an example vertical divergence slit apparatus for controlling an angle of implantation in accordance with an aspect of the present disclosure.

[0026] FIG. 6B is a top view of an example vertical divergence slit apparatus in accordance with another aspect of the present disclosure.

[0027] FIG. 6C is a side view of the vertical divergence slit apparatus of FIG. 6B in accordance with yet another aspect of the present disclosure.

DETAILED DESCRIPTION OF THE INVENTION

[0028] The present disclosure provides an ion implantation system and method for controlling (e.g., minimizing) an angular distribution (e.g., a divergence) of an ion beam, such as when employing channeling through a crystal structure in a workpiece. Further, a system and method for accurately and expeditiously tuning the ion beam to attain a tight angular distribution of the ion beam are provided by implementing a removable slit at a front focal point of a downstream or last focusing element in an ion beam transport system.

[0029] Accordingly, the present invention will now be described with reference to the drawings, wherein like reference numerals may be used to refer to like elements throughout. It is to be understood that the description of these aspects are merely illustrative and that they should not be interpreted in a limiting sense. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be evident to one skilled in the art, however, that the present invention may be practiced without these specific details. Further, the scope of the invention is not intended to be limited by the embodiments or examples described hereinafter with reference to the accompanying drawings, but is intended to be only limited by the appended claims and equivalents thereof.

[0030] It is also noted that the drawings are provided to give an illustration of some aspects of embodiments of the present disclosure and therefore are to be regarded as schematic only. In particular, the elements shown in the drawings are not necessarily to scale with each other, and the placement of various elements in the drawings is chosen to provide a clear understanding of the respective embodiment and is not to be construed as necessarily being a representation of the actual relative locations of the various components in implementations according to an embodiment of the invention. Furthermore, the features of the various embodiments and examples described herein may be combined with each other unless specifically noted otherwise.

[0031] It is also to be understood that in the following description, any direct connection or coupling between functional blocks, devices, components, circuit elements or other physical or functional units shown in the drawings or described herein could also be implemented by an indirect connection or coupling. Furthermore, it is to be appreciated that functional blocks or units shown in the drawings may be implemented as separate features or circuits in one embodiment, and may also or alternatively be fully or partially implemented in a common feature or circuit in another embodiment. For example, several functional blocks may be implemented as software running on a common processor, such as a signal processor. It is further to be understood that any connection which is described as being wire-based in the following specification may also be implemented as a wireless communication, unless noted to the contrary.

[0032] The present disclosure appreciates that, in order to achieve high degrees of channeling through a crystal lattice structure, especially at high energies, the ion beam should be angularly aligned with the crystal lattice structure of the workpiece. Various examples of channeling concepts and ion implantation systems are provided in co-owned U.S. Pat. No. 9,711,328 to Satoh, the entirety of which is hereby incorporated herein by reference.

[0033] The present disclosure further appreciates that such an alignment of the ion beam includes not only the mean or average angle of the ion beam with respect to the crystal lattice, but also its distribution. For example, for a very high energy arsenic (As) implant of greater than approximately 10 MeV, ions within the ion beam should have a tight angular distribution in order to provide a desirable channeling depth profile, such as having an angular distribution of less than approximately 0.1 degrees in standard deviation.

[0034] Conventionally, control of implant angles primarily concerned controlling the mean angle of incidence of the entire ion beam, and the distribution has not garnered much attention. However, with the recent rise in popularity of channeling implants, issues concerning the distribution of the implant angle have become more important, as well as how to reliably obtain an ion beam having a significantly small angle distribution.

[0035] Tuning an ion beam to provide a very small angle distribution has conventionally been a tedious process of trial-and-error; that is, repeating the cycle of changing parameters almost blindly, measuring the angle distribution of the resultant ion beam, and continuing the modification of parameters until an adequate distribution is attained. The present disclosure provides an expeditious solution to the conventional slow and unreliable tuning process for minimizing the angle distribution. The present disclosure provides a basis for tuning of vertical beam divergence in ion implantation systems, such as in the non-limiting example of the Purion XE/VXE/XEmax manufactured by Axcelis Technologies, Inc. of Beverly, Mass.

[0036] In order to gain a better understanding of the present disclosure, an ion implantation system 100 is illustrated in FIG. 1 in accordance with various example aspects of the present disclosure. The ion implantation system 100 is presented for illustrative purposes and it is appreciated that aspects of the invention are not limited to the described ion implantation system and that other suitable ion implantation systems of varied configurations can also be employed.

[0037] The ion implantation system 100 is illustrated having a terminal 102, a beamline assembly 104, and an end station 106. The terminal 102, for example, comprises an ion source 108 powered by a high voltage power supply 110, wherein the ion source produces and directs an ion beam 112 through the beamline assembly 104, and ultimately, to the end station 106. The ion beam 112, for example, can take the form of a spot beam, pencil beam, ribbon beam, or any other shaped beam. The beamline assembly 104 further has a beamguide 114 and a mass analyzer 116, wherein a dipole magnetic field is established to pass only ions of appropriate charge-to-mass ratio through an aperture 118 at an exit end of the beamguide 114 to define a mass analyzed ion beam 135 directed toward a workpiece 120 (e.g., a semiconductor wafer, display panel, etc.) positioned in the end station 106.

[0038] In accordance with one example, an ion beam scanning system 122 (referred to generically as a “scanner” or “scanning element”), such as an electrostatic or electromagnetic scanner, is configured to scan the ion beam 112 in at least a first direction 123 (e.g., the +/−y-direction, also called a first scan path or “fast scan” axis, path, or direction) with respect to the workpiece 120, therein defining a ribbon-shaped ion beam or scanned ion beam 124 (e.g., a fanned-out scanned ion beam). Furthermore, in the present example, a workpiece scanning system 126 is provided, wherein the workpiece scanning mechanism is configured to selectively scan the workpiece 120 through the ion beam 112 in at least a second direction 125 (e.g., the +/−x-direction, also called a second scan path or “slow scan” axis, path, or direction). The ion beam scanning system 122 and the workpiece scanning system 126, for example, may be instituted separately, or in conjunction with one another, in order to provide the desired scanning of the workpiece relative to the ion beam 112. In another example, the ion beam 112 is electrostatically scanned in the first direction 123, therein producing the scanned ion beam 124, and the workpiece 120 is mechanically scanned in the second direction 125 through the scanned ion beam 124. Such a combination of electrostatic and mechanical scanning of the ion beam 112 and workpiece 120 produces what is called a “hybrid scan”. The present invention is applicable to all combinations of scanning of the workpiece 120 relative to the ion beam 112, or vice versa. Further, a controller 130 is provided, wherein the controller is configured to control one or more components of the ion implantation system 100.

[0039] According to one exemplary aspect of present disclosure, a beam measurement system 150 is further provided. The beam measurement system 150, for example, is configured to determine one or more properties associated with the ion beam 112. A system and method for measuring the angle of the ions incident to the workpiece 120, as well as a calibration of said measurement to the crystal planes of the workpiece has been provided in a so-called “Purion XE” ion implantation system and commonly-owned U.S. Pat. No. 7,361,914 to Robert D. Rathmell et al., the contents of which are hereby incorporated by reference in its entirety.

[0040] In this manner, the mass analyzer 116 allows those species of ions in the ion beam 112 which have the desired charge-to-mass ratio to pass there-through to define the mass analyzed ion beam 135 that exits through the aperture 118. While not shown, the mass analyzed ion beam 135, for example, is then accelerated to a desired energy and further focused by a beam focusing lens (e.g., a quadrupole lens) before entering the scanning element 122. The scanned ion beam 124 is then passed through a parallelizer 160 (e.g., a parallelizer/corrector component, also called a “corrector magnet”), which comprises two dipole magnets 162A, 162B in the illustrated example. The dipole magnets 162A, 162B, for example, are substantially trapezoidal and are oriented to mirror one another to cause the scanned ion beam 124 to bend into a substantially S-shape. Stated another way, the dipole magnets 162A, 162B have equal angles and radii and opposite directions of curvature.

[0041] The parallelizer 160, for example, causes the scanned ion beam 124 to alter its beam path such that the mass analyzed beam travels parallel to a beam axis regardless of the scan angle. As a result, the implantation angle is uniform across the workpiece 120. In one example, one or more of the parallelizers 160 also act as deflecting components, such that neutrals generated upstream of the parallelizers will not follow the nominal path, and thus have approximately zero probability of reaching the end station 106 and the workpiece 120.

[0042] It will be appreciated that the one or more so-called corrector magnets or parallelizers 160 may comprise any suitable number of electrodes or magnets arranged and biased to focus, bend, deflect, converge, diverge, scan, parallelize and/or decontaminate the ion beam 112. The end station 106 then receives the mass analyzed ion beam 135 which is directed toward the workpiece 120. It is appreciated that different types of end stations 106 may be employed in the ion implantation system 100. For example, a “batch” type end station can simultaneously support multiple workpieces 120 on a rotating support structure, wherein the workpieces are rotated through the path of the ion beam 112 until all the workpieces completely implanted. A “serial” type end station, on the other hand, supports a single workpiece 120 along the beam path for implantation, wherein multiple workpieces are implanted one at a time in serial fashion, with each workpiece being completely implanted before implantation of the next workpiece begins. In hybrid systems the workpiece 120 may be mechanically translated in a first direction (e.g., along the y-axis, also called the slow scan or vertical direction) while the beam is scanned in a second direction (e.g., along the x-axis, also called the fast scan or horizontal direction) to impart the ion beam 112 over the entire workpiece.

[0043] The end station 106 in the illustrated example of FIG. 1 is a “serial” type end station that supports the single workpiece along the beam path for implantation. The beam measurement system 150 may be further included in the end station 106 near the location of the workpiece 120 for calibration measurements prior to implantation operations. During calibration, the ion beam 112 passes through the beam measurement system 150. The beam measurement system 150, for example, includes one or more profilers that may be stationary or continuously traverse a profiler path, thereby measuring the profile of the ion beam 112 (e.g., scanned or un-scanned spot or pencil beam).

[0044] Ions within the ion beam 112 generally travel in the same direction with some degree of distribution (e.g., divergence) around a mean value of an angular distribution. Accordingly, the present disclosure contemplates that during ion implantation, a constant angle of incidence, i.e., a mean angle of the distribution, across the surface of the workpiece 120 is an important consideration. Moreover, the fidelity or tightness of the angular distribution of the ion beam, for example, defines implant properties through crystal channeling effects or shadowing effects under vertical structures, such as photoresist masks or CMOS transistor gates. Uncontrolled angular distribution of the ion beam 112, for example, leads to uncontrolled, and undesired implant properties. The incident angle (mean angle of the distribution) and the angular distribution of the ion beam 112 is therefore measured to high accuracy using a variety of beam diagnostic equipment, some of which has have been discussed above. The measurement data may then be used in an angle correction method. Once the correction is applied, the measurement of beam angles and its adjustment are repeated until the desired beam angle properties, mean angle and tight distribution, is achieved.

[0045] On some implantation systems, for example, the one or more corrector magnets or parallelizers 160 of FIG. 1 are utilized to convert a horizontally fanning-out beam into parallel shifting scanned beam. The parallelizing function, or optics, can be viewed as a positive focusing lens system 200 including parallelizing optics 202 (also called a parallelizing lens), as illustrated in FIG. 2. The parallelizing optics 202, for example, may comprise or be comprised of the corrector magnet or parallelizer 160 of FIG. 1. The parallelizing optics 202, for example, are configured to obtain a generally constant “mean” implant angle over the width of the workpiece 120. A front focal point 204, or the positive lens of the corrector magnet 160, for example, is located at the scan vertex 154 of the scanner or scanning element 122. As illustrated as an ideal case in FIG. 2, each line 206 of the ion beam 112 represents an ion beam 112 that has a “zero” angular distribution, or in other words, a substantially small angular distribution 208 of ion beams 112 in the horizontal direction (e.g., the x-direction shown in FIG. 2).

[0046] FIG. 3 illustrates an example where an incoming ion beam 209 (e.g., the mass analyzed ion beam 135) has a finite angular distribution 210. In such an instance, when the incoming ion beam 209 having the finite angular distribution 210 is focused to the same scan vertex position (shown as a cone 212 emanating from the scan vertex 154 in FIG. 3), a final ion beam 213 on to the workpiece 120 also has the finite angular distribution 210. The degree of angular distribution of the final ion beam 213 depends on how well the incoming ion beam 209 is focused at the scan vertex 154. In accordance with the present disclosure, FIG. 4 illustrates one example, whereby a slit 214 (e.g., a slit defined in a retractable plate having an aperture configured such that operation of the scanning element 122 is possible) is placed at the scan vertex 154, whereby various lenses upstream of the scanning element are adjusted or otherwise controlled to focus or otherwise provide a maximum transmission of the incoming ion beam 209 through the slit. As such, the ion beam 112 has a lowest angle distribution 216 on to the workpiece 120. In accordance with the present disclosure, FIG. 4 thus illustrates a horizontal angle distribution minimization system 218. While various technical issues are understood to exist in designing the slit 214 illustrated in FIG. 4, such as being retractable at the scan vertex 154, while also providing operation of the scanning element 122 during normal operation of the ion implantation system in a high voltage environment, the present disclosure contemplates such a system as providing desirable minimization of angle distribution of the ion beam 112.

[0047] FIG. 5 illustrates an example of a vertical angle distribution minimization system 220. In the vertical direction (e.g., in the y-direction shown in FIG. 5), the corrector magnet 160, for example, is configured to provide a strong positive focusing power, whereby the corrector magnet can be utilized to minimize a vertical beam angle distribution 222 using a similar principle as that used in the horizontal direction, as discussed above. The present disclosure thus provides a Vertical Divergence Slit (VDS) apparatus 224 (also called a retractable slit apparatus), for the minimization of the vertical beam angle distribution 222. The VDS apparatus 224, in one example, is located immediately after an exit 226 of the scanning element 122, which is also close in proximity to the front focal point of the lens of corrector magnet 160 in the vertical direction. The focusing power of the corrector magnet 160 (e.g., a so-called “S-bend”), for example, is strong enough for the slit 214 of the VDS apparatus 224 to be placed at the exit 226 of the scanning element 122 at a focal point 228, thereof. The VDS apparatus 224, for example, is selectively removable from the path of the ion beam 112, whereby the slit 214 of the VDS apparatus can be selectively translated, rotated, or otherwise moved or removed from the path of the ion beam, as indicated in one example by arrows 229. The slit 214 of the VDS apparatus 224, for example, is configured to be selectively positioned, translated and/or rotated along or about any of the x-axis, y-axis, or z-axis.

[0048] It should be noted that while particular ion implantations are specifically discussed herein, other ion implantation systems, for example, may utilize a similar system as that discussed above in order to minimize the angle distribution of the final beam, in either of the horizontal or vertical direction, whereby a slit is provided at the front focal point of the final positive lens in the respective horizontal or vertical direction.

[0049] In one example, the VDS apparatus 224 is provided after the scanning element 122 because the vertical focal length is stronger, and as such, the slit 214 is located closer to the corrector magnet 160. Tuning of the ion beam 112, for example, can thus be provided before or after the scanning element 122, such as via a quadrupole lens (not shown), whereby the slit 214 is moved away after tuning, and whereby ion implantation into the workpiece 120 can be subsequently performed. When tuning, the slit 214 is positioned along the beamline, and an upstream lens (not shown) can be adjusted and focused point-wise. The beam current of the ion beam 112 can then be measured such that the transmission through the slit 214 is the optimized (e.g., yielding a maximized beam current), thus providing an indication that the ion beam is quite small through the slit. Thus, the present disclosure provides an angle distribution control tuning aid.

[0050] FIGS. 6A-6C illustrate another example of a vertical angle distribution minimization system 300 in accordance with various aspects of the present disclosure. As an overview, FIG. 6A illustrates the vertical angle distribution minimization system 300, whereby the ion beam 112 is passed through a quadrupole lens 302 and subsequently scanned in the horizontal direction (e.g., the x-direction) by the scanning element 122. The VDS apparatus 224, for example, is selectively positioned (e.g., indicated by arrows 229) such that a horizontal dimension 304 and vertical dimension 306 of the slit 214 primarily restricts only a vertical height (e.g., in the y-direction) of the scanned ion beam 124 while permitting the entire scan width of the ion beam 112 in the horizontal direction to pass therethrough. The scan vertex 154, for example, is coincident with a horizontal front focal point 308 of the parallelizing optics 202.

[0051] FIG. 6B illustrates a top view 310 of the vertical angle distribution minimization system 300 of FIG. 6A, whereby the scanned ion beam 124 is not impeded in the horizontal direction by the slit 214 of the VDS apparatus 224. The scan vertex 154, or the horizontal bending point of the scanning element 122, is placed at the horizontal front focal point 308 of the parallelizing optics 202. For illustration purposes, the parallelizing optics 202 is depicted as a simple positive focusing lens, however other lens systems are also contemplated. The quadrupole lens 302, for example, brings the ion beam 112 into focus at the scan vertex 154, whereby the final ion beam 213 out of the parallelizing optics 202 is horizontally parallel and has the minimum angular distribution.

[0052] FIG. 6C shows a side view 312 of the vertical angle distribution minimization system 300 of FIG. 6A, wherein the slit 214 of the VDS apparatus 224 is positioned (e.g., illustrated as arrows 229) at a vertical front focal point 314 of the parallelizing optics 202, when the quadrupole lens 302 focuses the ion beam 112 vertically at the VDS slit. It is to be appreciated that the VDS apparatus 224, for example, may comprise a translation apparatus 316 comprising one or more linear actuators, rotational actuators, gears, linkages, and/or other mechanisms operatively coupled to a plate 318 in which the slit 214 is defined, as well as one or more controllers or other control mechanisms, whereby the VDS apparatus is configured to selectively position the slit 214 at the vertical front focal point 314 and scan vertex 154. Accordingly, the final ion beam 213 emerging from the parallelizing optics 202 is advantageously vertically parallel, while also having the minimum angular distribution in vertical direction, as described above. The VDS apparatus 224 may be further removed from the path of the ion beam 112, as desired.

[0053] Thus, the present disclosure provides advantages over the conventional iterative trial-and-error process, thus quickly achieving a faster and easier tuning of the ion implantation system in real time.

[0054] Although the invention has been illustrated and described with respect to one or more implementations, alterations and/or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In particular regard to the various functions performed by the above described components or structures (blocks, units, engines, assemblies, devices, circuits, systems, etc.), the terms (including a reference to a “means”) used to describe such components are intended to correspond, unless otherwise indicated, to any component or structure which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary implementations of the invention.

[0055] In addition, while a particular feature of the invention may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for any given or particular application. The term “exemplary” as used herein is intended to imply an example, as opposed to best or superior. Furthermore, to the extent that the terms “including”, “includes”, “having”, “has”, “with”, or variants thereof are used in either the detailed description and the claims, such terms are intended to be inclusive in a manner similar to the term “comprising”.