LTCC substrate and preparation method thereof
20210387890 · 2021-12-16
Inventors
- Tao CHEN (Zhaoqing, Guangdong, CN)
- Kun HUANG (Zhaoqing, Guangdong, CN)
- Shiwo TA (Zhaoqing, Guangdong, CN)
- Zhenxiao FU (Zhaoqing, Guangdong, CN)
- Yun LIU (ACT, AU)
Cpc classification
C04B2235/96
CHEMISTRY; METALLURGY
C04B2235/604
CHEMISTRY; METALLURGY
C04B2235/3418
CHEMISTRY; METALLURGY
C03B19/1045
CHEMISTRY; METALLURGY
C04B2235/36
CHEMISTRY; METALLURGY
C04B2235/3217
CHEMISTRY; METALLURGY
C03B19/06
CHEMISTRY; METALLURGY
C03C14/004
CHEMISTRY; METALLURGY
International classification
C03B19/06
CHEMISTRY; METALLURGY
Abstract
The disclosure relates to a Low Temperature Co-fired Ceramic (LTCC) substrate and a preparation method thereof, and in particular to a dielectric-constant-adjustable LTCC substrate and a preparation method thereof. The LTCC substrate of the disclosure includes the following components: glass, SiO.sub.2 and Al.sub.2O.sub.3, a weight percentage of the SiO.sub.2 in the LTCC substrate is 10% to 25%.
Claims
1. An LTCC substrate, comprising the following components: glass, SiO.sub.2 and Al.sub.2O.sub.3, a weight percentage of the SiO.sub.2 in the LTCC substrate is 10% to 25%.
2. The LTCC substrate as claimed in claim 1, wherein the weight percentage of the SiO.sub.2 in the LTCC substrate is 20% to 25%.
3. The LTCC substrate as claimed in claim 2, wherein the weight percentage of the SiO2 in the LTCC substrate is 20%.
4. The LTCC substrate as claimed in claim 1, wherein in the LTCC substrate, a weight percentage of the glass is 50% to 60%, and a weight percentage of the Al.sub.2O.sub.3 is 25% to 40%.
5. The LTCC substrate as claimed in claim 1, wherein the glass is formed by the following components in weight percentage: 45.8% of SiO.sub.2, 39.6% of H.sub.3BO.sub.3, 3.3% of K.sub.2CO.sub.3, 3.6% of Na.sub.2CO.sub.3, 0.7% of Li.sub.2CO.sub.3, 1.5% of CaCO.sub.3, 1.1% of SrCO.sub.3, 1.9% of BaCO.sub.3, 1.2% of Al.sub.2O.sub.3, 0.6% of MgO, 0.4% of TiO.sub.2 and 0.3% of ZnO.
6. The LTCC substrate as claimed in claim 5, wherein the glass is glass powder, and a preparation method for the glass powder is as follows: (a) weighing each component in the glass in proportion, drying after ball-milling, and then heat-preserving in a temperature above 1250° C., enabling molten glass to be homogenized; and (b) taking out the molten glass, quenching in water, and ball-milling, to obtain glass slurry, drying the glass slurry, to obtain the glass powder.
7. A preparation method for the LTCC substrate as claimed in claim 1, comprising the following steps: (1) weighing glass, SiO.sub.2 and Al.sub.2O.sub.3 in proportion, ball-milling, enabling the glass, the SiO2 and the Al.sub.2O.sub.3 to be mixed uniformly, and then drying, to obtain LTCC ceramic powder; (2) adding a solvent, a dispersant, a plasticizer, a defoamer and a binder to the LTCC ceramic powder obtained in Step (1), and ball-milling, to obtain ceramic slurry; (3) enabling the ceramic slurry obtained in Step (2) to be casted into a membrane, performing isostatic pressing treatment after laminating, and then cutting into a raw sheet; and (4) sintering the raw sheet obtained in Step (3), and acquiring the LTCC substrate after cooling.
8. The preparation method for the LTCC substrate as claimed in claim 7, wherein in Step (3), a thickness of the membrane is 60 μm, and a pressure of the isostatic pressing treatment is 20 MPa.
9. The preparation method for the LTCC substrate as claimed in claim 7, wherein in Step (4), sintering the raw sheet obtained in Step (3) in 870° C., and heat-preserving for 30 min, to obtain the LTCC substrate after cooling.
10. The preparation method for the LTCC substrate as claimed in claim 7, wherein the weight percentage of the SiO.sub.2 in the LTCC substrate is 20% to 25%.
11. The preparation method for the LTCC substrate as claimed in claim 7, wherein the weight percentage of the SiO.sub.2 in the LTCC substrate is 20%.
12. The preparation method for the LTCC substrate as claimed in claim 7, wherein in the LTCC substrate, a weight percentage of the glass is 50% to 60%, and a weight percentage of the Al.sub.2O.sub.3 is 25% to 40%.
13. The preparation method for the LTCC substrate as claimed in claim 7, wherein the glass is formed by the following components in weight percentage: 45.8% of SiO.sub.2, 39.6% of H.sub.3BO.sub.3, 3.3% of K.sub.2CO.sub.3, 3.6% of Na.sub.2CO.sub.3, 0.7% of Li.sub.2CO.sub.3, 1.5% of CaCO.sub.3, 1.1% of SrCO.sub.3, 1.9% of BaCO.sub.3, 1.2% of Al.sub.2O.sub.3, 0.6% of MgO, 0.4% of TiO.sub.2 and 0.3% of ZnO.
14. The preparation method for the LTCC substrate as claimed in claim 7, wherein the glass is glass powder, and a preparation method for the glass powder is as follows: (a) weighing each component in the glass in proportion, drying after ball-milling, and then heat-preserving in a temperature above 1250° C., enabling molten glass to be homogenized; and (b) taking out the molten glass, quenching in water, and ball-milling, to obtain glass slurry, drying the glass slurry, to obtain the glass powder.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0026]
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0027] In order to better describe purposes, technical schemes and advantages of the disclosure, the disclosure is further described below in combination with drawings and specific embodiments.
[0028] LTCC Substrates in Embodiments 1-5 and Contrast Embodiment 1
[0029] Formation components of the LTCC substrates in Embodiments 1-5 and Contrast Embodiment 1 are as shown in Table 1. Herein, the glass is glass powder, and the glass is formed by the following components in weight percentage: 45.8% of SiO.sub.2, 39.6% of H.sub.3BO.sub.3, 3.3% of K.sub.2CO.sub.3, 3.6% of Na.sub.2CO.sub.3, 0.7% of Li.sub.2CO.sub.3, 1.5% of CaCO.sub.3, 1.1% of SrCO.sub.3, 1.9% of BaCO.sub.3, 1.2% of Al.sub.2O.sub.3, 0.6% of MgO, 0.4% of TiO.sub.2 and 0.3% of ZnO.
[0030] A preparation method for the glass is as follows:
[0031] (a) weighing each component in the glass in proportion, using an agate ball-milling jar, and using deionized water as a medium, planetary-milling for 4 h, discharging, and drying for 12 h in 100° C.;
[0032] (b) enabling dried raw material powder to be loaded in a platinum crucible, placing in a high temperature furnace, heat-preserving for 2 h in 1250° C., enabling molten glass to be homogenized, taking out the molten glass in a high temperature, and quenching in the deionized water; and
[0033] (c) enabling the above quenched glass to be placed in the agate ball-milling jar, using zirconia beads as a dielectric, and using the deionized water as the medium, planetary-milling for 12 h, to obtain glass slurry, enabling the glass slurry to be dried for 12 h in 100° C., to obtain the dry glass powder.
[0034] A preparation method for the LTCC substrates in Embodiments 1-5 is as follows:
[0035] (1) weighing the glass powder, the SiO2 and the Al2O3 in proportion, in the agate ball-milling jar, using the deionized water as the medium, planetary-milling for 2 h, enabling the powder to be mixed uniformly, and drying for 12 h in 100° C., to obtain LTCC ceramic powder;
[0036] (2) adding a suitable amount of a solvent, a dispersant, a plasticizer, a defoamer and a binder to the above ceramic powder, placing in a horizontal ball-milling jar, and ball-milling for 28 h, to obtain uniform stable ceramic slurry;
[0037] (3) enabling the above ceramic slurry to be casted into a membrane in 60 μm of a thickness, after laminating, in 20 MPa of an isostatic pressing pressure, cutting into a square raw sheet in 15 mm*15 mm; and
[0038] (4) enabling the above raw sheet to be sintered in 870° C., heat-preserving for 30 min, after that, furnace-cooling, to obtain the LTCC substrate with a flat surface.
[0039] A difference between the preparation method for the LTCC substrates in Contrast Embodiment 1 and the preparation methods for the LTCC substrates in Embodiments 1-5 is only as follows: in Step (1), weighing the glass powder and the Al2O3 in proportion and placing in the agate ball-milling jar.
[0040] Porosities, bending strengths, dielectric constants and dielectric losses of the LTCC substrates in Embodiments 1-5 and Contrast Embodiment 1 are tested, the porosities are tested and calculated by using a hydrostatic weighing method according to <People's Republic of China Light Industry Standard: QB/T 1642-2012>, the bending strengths are tested by using a three-point bending method, the dielectric constants in 1 MHz are tested by using a precision bridge tester (Agilent E4980A), and calculated according to a parallel-plate capacitor formula. The dielectric constants and losses in 10 GHz are tested by using a network analyzer through a parallel-plate reflection method. An experiment result is as shown in Table 1. At the same time, a scanning electron microscope (SEM) is used to test the substrates in Embodiments 3-5 and Contrast Embodiment 1, a result is as shown in
TABLE-US-00001 TABLE 1 Glass SiO.sub.2 Al.sub.2O.sub.3 Bending Dielectric Dielectric Dielectric Dielectric content content content Porosity strength constant loss constant loss (wt %) (wt %) (wt %) (%) (MPa) @1 MHz @1 MHz @10 GHz @10 GHz Contrast Embodiment 1 60 0 40 2.12 142 6.2 0.34% 6.3 0.67% Embodiment 1 60 15 25 0.28 149 5.0 0.29% 5.1 0.52% Embodiment 2 55 10 35 0.23 169 5.4 0.25% 5.5 0.41% Embodiment 3 50 10 40 0.26 178 6.0 0.23% 5.8 0.35% Embodiment 4 50 20 30 0.11 186 4.9 0.20% 4.7 0.32% Embodiment 5 50 25 25 0.11 167 4.3 0.21% 4.2 0.32%
[0041] It is indicated from an SEM diagram that, the porosity of a ceramic body may be effectively reduced by adding the SiO.sub.2, while the SiO.sub.2 content is 10 wt %, the porosity of the ceramic body is apparently reduced, and while the SiO.sub.2 content is greater than 20 wt %, there are not apparent pores in the ceramic body. It may be observed from data in Table 1 that, while the SiO.sub.2 content is 10 wt %, the porosity of the ceramic body is less than 0.26%, and the bending strength is higher than 169 MPa; and while the SiO.sub.2 content is 20 wt %, the porosity is reduced to a minimum value 0.11%, and the bending strength reaches a maximum value 186 MPa. In addition, in 10 GHz of a high frequency, the LTCC substrate of the disclosure may maintain the lower dielectric loss, and may be as low as 0.32%, while the performance of the adjustable dielectric constants is obtained, the loss of the substrate in 1 MHz and high frequency is low, and it has both compactness and higher bending strength. The substrate may be applied to the fields of internet of things, internet of vehicles and 5G radio frequency devices with low latency transmission requirements.
[0042] Finally, it is to be noted that the above embodiments are only used to describe technical schemes of the disclosure, but not intended to limit a scope of protection of the disclosure, although the disclosure is described in detail with reference to the preferable embodiments, it should be understood by those of ordinary skill in the art that modifications or equivalent replacements may be made to the technical schemes of the disclosure without departing from the spirit and scope of the technical schemes of the disclosure.