ULTRA-LOW DENSITY METALLIC COATINGS

Abstract

Forming a porous multilayer material includes forming a multilayer material on a substrate. Forming the multilayer material includes alternately forming a sacrificial layer and a semi-sacrificial layer, where the sacrificial layer includes a first metal and the semi-sacrificial layer includes the first metal and a second metal or metallic alloy. Forming the porous multilayer material further includes removing at least a portion of the first metal from each of the sacrificial and semi-sacrificial layers to yield the porous multilayer material. The porous multilayer material includes a multiplicity of metal-containing layers, each layer having a thickness in a range between about 5 nm and about 100 nm and bonded to an adjacent layer. Each layer includes chromium, niobium, tantalum, vanadium, molybdenum, tungsten, or a combination thereof. A void is defined between each pair of layers, and a density of porous the multilayer material is <1% bulk density.

Claims

1. A method of forming a porous multilayer material, the method comprising: forming a multilayer material on a substrate, wherein forming the multilayer material comprises alternately forming a sacrificial layer and a semi-sacrificial layer, wherein the sacrificial layer comprises a first metal and the semi-sacrificial layer comprises the first metal and a second metal or metallic alloy; and removing at least a portion of the first metal from each of the sacrificial and semi-sacrificial layers to yield the porous multilayer material.

2. The method of claim 1, further comprising sintering the porous multilayer material to bond each semi-sacrificial layer to an adjacent semi-sacrificial layer.

3. The method of claim 1, further comprising separating the multilayer material from the substrate before removing at least the portion of the first metal.

4. The method of claim 3, further comprising, after removing at least the portion of the first metal, sintering the porous multilayer material to bond each semi-sacrificial layer to an adjacent semi-sacrificial layer.

5. The method of claim 4, further comprising crushing the porous multilayer material.

6. The method of claim 1, wherein forming the sacrificial layer comprises electron beam evaporation of the first metal.

7. The method of claim 1, wherein forming the semi-sacrificial layer comprises sputtering.

8. The method of claim 1, wherein removing at least the portion of the first metal comprises dissolving at least the portion of the first metal.

9. The method of claim 1, wherein removing at least the portion of the first metal comprises boiling off at least the portion of the first metal.

10. The method of claim 1, wherein removing at least the portion of the first metal comprises removing substantially all of the first metal.

11. The method of claim 1, wherein removing at least the portion of the first metal defines voids between the semi-sacrificial layers.

12. The method of claim 1, wherein a thickness of each sacrificial layer is in a range of about 0.2 μm to about 2 μm.

13. The method of claim 1, wherein a thickness of each semi-sacrificial layer is in range of about 5 nm to about 100 nm.

14. The method of claim 1, wherein a thickness of the porous multilayer material is in a range of about 100 μm to about 500 μm.

15. The method of claim 1, wherein the first metal comprises one or both of copper and magnesium.

16. The method of claim 1, wherein the second metal or metallic alloy comprises one or more of chromium, niobium, tantalum, vanadium, molybdenum, and tungsten.

17. The method of claim 1, wherein each semi-sacrificial layer comprises 70-85 atomic percent of the first metal.

18. A multilayer material comprising: a multiplicity of metal-containing layers, each layer having a thickness in a range between about 5 nm and about 100 nm and bonded to an adjacent layer, wherein: each layer comprises one or more of chromium, niobium, tantalum, vanadium, molybdenum, and tungsten, a void is defined between each pair of layers, and a density of the multilayer material is <1% bulk density.

19. An article comprising the multilayer material of claim 18.

20. A 3D printing feedstock comprising the multilayer material of claim 18.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0017] FIGS. 1A-1C depict steps in an exemplary method for synthesizing an ultra-low density, protective metal (PM) coating.

[0018] FIG. 2 depicts a three-dimensional view of a corrugated PM layer with idealized circular openings.

[0019] FIGS. 3A and 3B show bright field transmission electron microscopy (TEM) images of a CuNb (80 atomic % Cu) film that was co-deposited at 750° C. FIG. 3C shows selected area diffraction (SAD) pattern of a CuNb film showing both Cu and Nb diffraction rings. Only the first few rings are indicated. FIGS. 3D and 3E show bright field TEM images of a CuNb film after selectively dissolving Cu, revealing a highly porous structure. FIG. 3F is a SAD pattern of a porous film showing only Nb diffraction rings.

DETAILED DESCRIPTION

[0020] This disclosure describes the synthesis of ultra-low density (<1% bulk density) protective metal (PM) coatings with high temperature specific strength (>50 MPa.cc/gm at ˜1500 C), deformability (>10% macroscopic failure strain), good creep and oxidation resistance, and low thermal conductivity (<0.1 W/mK) for use in extreme environments such as space reentry/hypersonic vehicles, aircraft and power plant turbines, and automobile engines. The synthesis method includes physical vapor deposition techniques such as sputtering and evaporation, and does not require any unusual equipment or manufacturing techniques. Methods include direct deposition of the PM coatings on structural components and production of PM meshes for spray coating and three-dimensional (3D) printing feedstock. The coatings may include elemental metals or metallic alloys, including high entropy alloys.

[0021] As depicted in FIG. 1A, direct deposition of PM coatings on substrate 100 includes repeated deposition of sacrificial layer 102 followed by semi-sacrificial layer 104 to form multilayer 106. Sacrificial layer 102 includes a sacrificial metal (SM), and typically has a thickness in a range between about 0.2 μm and about 2 Semi-sacrificial layer 104 includes a SM and a PM (e.g., about 70 to about 85 atomic percent SM), and typically has a thickness in a range of about 5 nm to about 100 nm. Multilayer 106, which includes a multiplicity of sacrificial layers 102 and semi-sacrificial layer 104, typically has a thickness in a range of about 100 μm to about 500 μm thick. The SM is selectively dissolved (with slight agitation, if needed) in sacrificial layer 102 and semi-sacrificial layer 104 to create porous layers 108, depicted in FIG. 1B. In one example, porous layers 108 are unevenly stacked, corrugated refractory high entropy alloy (RHEA) layers. As depicted in FIG. 1C, porous layers 108 are bonded (e.g., diffusion bonded) at sites 110 (e.g., to prevent layer sliding) by sintering at temperatures ranging from 800° C. to 2400° C. for up to 24 hours to yield PM layer (or coating) 112. PM layer 112 can accommodate large deformations via bending or buckling. FIG. 2 depicts a three-dimensional view of a corrugated, porous layer 108 with idealized circular openings 200.

[0022] In some examples, the SM includes Mg, Cu, or both. The PM includes Cr, Nb, Ta, V, Mo, or W, or alloys including one or two or more of these elements (including high entropy alloys). Cr, Nb, Ta, V, Mo, and W are all considered to be immiscible with Cu and Mg. Cu and Mg can be selectively dissolved by deionized water or dilute acids (e.g., nitric acid). Mg can also be boiled away due at least in part to its low boiling point (1091° C.). Sputtering can be used for the semi-sacrificial (SM+PM) layer 104 as it enables precise compositional control. Electron beam evaporation can be used for sacrificial (SM) layer 102 since it can provide higher deposition rates (e.g., up to 1 μm/min).

[0023] Instead of or in addition to directly depositing the PM coating 112 on a substrate (e.g., a structural component), PM meshes can also be prepared for spray coating or as feedstock for three-dimensional (3D) printing. A low adhesion substrate can be used so that the multilayers can be peeled off and harvested. The SM can then be dissolved from the harvested multilayers, leaving a PM mesh that can be crushed, spray coated, and sintered on the desired component. Alternately, the multilayers can be compacted and extruded to create feedstock for 3D printing (e.g., fused deposition modeling). After printing, the PM coating can be formed by SM dissolution and sintering.

[0024] The PM coatings synthesized as described in this disclosure demonstrate a combination of high temperature specific strength (>50 MPa.cc/gm at 1500 C), deformability (>10% macroscopic failure strain) and low thermal conductivity (<0.1 W/mK). In addition, the chemical composition and microstructure of the PM layers can be tailored across the thickness to mitigate or eliminate stresses that arise from thermal mismatch with the substrate (e.g., a structural alloy) as well as improve adhesion with the substrate.

EXAMPLE

[0025] FIGS. 3A and 3B show bright field transmission electron microscopy (TEM) images of an example SM+PM layer (CuNb film composed of 80 atomic % Cu) that was co-deposited at 750° C. FIG. 3C shows selected area diffraction (SAD) pattern of a CuNb film showing both Cu and Nb diffraction rings. Only the first few rings are indicated. FIGS. 3D and 3E show bright field TEM images of a CuNb film after selectively dissolving Cu, revealing a highly porous structure with pores having a dimension in a range between 5 nm and 200 nm. FIG. 3F is a SAD pattern of a porous film showing only Nb diffraction rings.

[0026] Although this disclosure contains many specific embodiment details, these should not be construed as limitations on the scope of the subject matter or on the scope of what may be claimed, but rather as descriptions of features that may be specific to particular embodiments. Certain features that are described in this disclosure in the context of separate embodiments can also be implemented, in combination, in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments, separately, or in any suitable sub-combination. Moreover, although previously described features may be described as acting in certain combinations and even initially claimed as such, one or more features from a claimed combination can, in some cases, be excised from the combination, and the claimed combination may be directed to a sub-combination or variation of a sub-combination.

[0027] Particular embodiments of the subject matter have been described. Other embodiments, alterations, and permutations of the described embodiments are within the scope of the following claims as will be apparent to those skilled in the art. While operations are depicted in the drawings or claims in a particular order, this should not be understood as requiring that such operations be performed in the particular order shown or in sequential order, or that all illustrated operations be performed (some operations may be considered optional), to achieve desirable results.

[0028] Accordingly, the previously described example embodiments do not define or constrain this disclosure. Other changes, substitutions, and alterations are also possible without departing from the spirit and scope of this disclosure.