STABLE UV LASER

Abstract

UV laser devices, systems, and methods are shown and/or described herein. Included are a method, device or system for VECSEL and MECSEL lasers including both barrier-pumped and in-well pumped lasers. Also disclosed is a method of manufacturing gain chips for use in the lasers, arrangements of lasers, and selection of proper non-linear crystal (NLC) for use in the device.

Claims

1. A method, device or system as described herein.

2. A method, device or system according to claim 1; including a UV laser comprising: a gain chip having one or more quantum wells or one or more quantum dots and one or more mirrors.

3. A method, device or system according to claim 1 or 2; further including one or more of: the one or more mirrors being highly reflective; the one or more quantum wells being semiconductor gain media for the laser; the gain chip having one or more laser cavities, and the one or more quantum wells being enclosed inside the one or more laser cavities; the gain chip having one or more semiconductor thin disc laser cavities, and particularly a VECSEL cavity or a MECSEL cavity; and/or the one or more mirrors being disposed to extract light from the one or more cavities.

4. A method, device or system according to any of claims 1-3; the one or more quantum wells being one or more of: electrically pumped or optically pumped, including fiber coupled diode lasers or free space diode lasers.

5. A method, device or system according to any of claims 1-4; further including one or more of: visible light power intensity of at least a factor of about 10 or more than its power outside of the cavity mirrors; an enhancement factor of between about 40 and about 100 when the one or more cavity mirrors are highly reflective; provision of sufficient visible high intensity light to provide the temporally stable high intensity visible light requisite for a UV laser.

6. A method, device or system according to any of claims 1-5; the laser further being or including one or more of: a VECSEL gain chip and a MECSEL gain chip.

7. A method, device or system according to any of claims 1-6; the laser further being or including one or more of: a VECSEL; a VECSEL with a VECSEL setup with said one or more mirrors being at least one mirror being operatively disposed relative to the gain chip; a MECSEL; and a MECSEL with a MECSEL setup with said one or more mirrors being at least two mirrors being operatively disposed disparately relative to the gain chip.

8. A method, device or system according to any of claims 1-7; including a UV laser that provides for the efficient and/or temporally stable generation of UV light from or using one or both: A) a Visible Wavelength Laser Light Source (VWLS), by using a laser cavity supporting multiple frequencies of VWLS; and B) using length optimized non-linear optics to double the visible frequencies inside the laser cavity into UV light.

9. A method, device or system according to any of claims 1-8; for or using one or both of VECSEL and MECSEL lasers including one or both barrier-pumped or in-well pumped lasers.

10. A method, device or system according to any of claims 1-9; including one or more of: manufacturing gain chips for use in the lasers, arrangements of lasers, and selection of proper non-linear crystal (NLC) for use in the device.

11. A method, device or system according to any of claims 1-10; including one or more of: (A) temporally stable high intensity of visible light, and (B) a proper non-linear crystal, or periodically poled material to convert the visible light into UV light.

12. A method, device or system according to any of claims 1-11; including one or both a VECSEL gain chip or a MECSEL gain chip; either or both the VECSEL gain chip or the MECSEL gain chip having: one or more quantum wells (“QW” or “VECSEL QW”) or quantum dots (“QD”).

13. A method, device or system according to any of claims 1-12; the VECSEL gain chip or the MECSEL gain chip being a semiconductor gain media for the laser.

14. A method, device or system according to any of claims 1-13; comprising one or more of: enclosing the QW or QD inside a laser cavity: extracting a few watts of visible light power from the cavity by using one or more partial reflecting cavity mirrors; electrically or optically pumping, the VECSEL QW or QD or MECSEL QW or QD producing an output; between the cavity mirrors, the visible light power intensity may be at least a factor of 10 or more than its power outside of the cavity mirrors; the enhancement factor being between about 40 and about 100 when all cavity mirrors are highly reflective; a semiconductor thin disc laser cavity, and particularly a VECSEL cavity or MECSEL providing the necessary visible high intensity light to provide temporally stable high intensity visible light for a UV laser.

15. A method, device or system according to any of claims 1-14; including one or more non-linear crystals (NLCs) for use in the device.

16. A method, device or system according to claims 1-15; comprising one or more of: cooling for high power operation; a gain region of both the VECSEL gain chip and a MECSEL gain chip having one or both a layered structure or layered arrangement for cooling; and, one or more of heat spreaders and reflectors layered, or sandwiched, around the QW structure.

17. A method, device or system according to any of claims 1-16; including one or more of the gain chip comprising: a heat spreader as the first layer thereof; a heat spreader as the first layer thereof, the heat spreader being of a material or composition selected from diamond, SiC, GaAs, or a high-thermal conducting optic material for a cooling layer; a second layer being or including the one or more quantum wells or quantum dots; and/or a third layer being or including a distributed bragg reflector (DBR).

18. A method, device or system according to claim 17; the gain chip further being one of: a VECSEL gain chip and a MECSEL gain chip.

19. A method, device or system according to claim 18; the gain chip further being a MECSEL gain chip and one or more of: the MECSEL gain chip having one or more additional heat spreaders; the MECSEL gain chip sandwiching the MECSEL QW structure between two cooling devices, or heat spreaders and, the MECSEL gain chip having no DBR structure.

20. A method, device or system according to any of claims 1-19; comprising one or more of: a method of producing a VECSEL gain chip or a MECSEL gain chip, where the QW or QD structure is first growing the QW or QD structure on a desired substrate, or wafer, such as GaAs; a substrate typically having a thickness of 0.2-0.5 mm depending on the wafer diameter. optically bonding a heat spreader such as SiC to the QW-GaAs wafer; the optical bonding including conforming one wafer to another wafer to maintain good optical and thermal contact.

21. A method, device or system according to any of claims 1-20; comprising one or more of: making the QW-GaAs or QD-GaAs wafer more flexible; reducing the QW-GaAs or QD-GaAs wafer thickness from the GaAs side to around 0.1 mm or less; surface activating the SiC wafer and the thin, or reduced thickness, QW-GaAs or QD-GaAs wafer; bonding or pressing together the SiC wafer and the thin, or reduced thickness, QW-GaAs or QD-GaAs wafer in an optical bonding machine; bonding or pressing together the SiC wafer and the thin, or reduced thickness, QW-GaAs or QD-GaAs wafer in an optical bonding machine under ultra-high vacuum conditions; and the VECSEL gain chip terminated by a DBR.

22. A method, device or system according to any of claims 1-21; comprising one or more of: making, according to one or more of claims 1-21, the SiC-QW-GaAs or SiC-QD-GaAs into a single wafer of partial MECSEL QW wafer assembly; dipping a partial MECSEL QW wafer assembly into acid solution such as H.sub.2SO.sub.4:H.sub.2O.sub.2:H.sub.2O, or concentrated sulfuric acid, or NH.sub.4OH:H.sub.2O.sub.2 etchant to remove the GaAs selectively; following this acid wash, only the thin QW or QD layer is left on the SiC wafer; activating a second SiC wafer and pressing the second SiC wafer to the SiC-QW or SiC-QD, utilizing the bonding process in a standard optical bonding machine under high or ultra-high vacuum conditions; resulting in the formation of a single SiC-QW-SiC or SiC-QD-SiC wafer.

23. A method, device or system according to any of claims 1-22; comprising one or more of: further processing the SiC-QW-GaAs or SiC-QD-GaAs (VECSEL) wafer and the SiC-QW-SiC or SiC-QD-SiC (MECSEL) wafer by applying an anti-reflection (AR) coating and metallization with a pattern; and, producing one or both of a single, or individual, SiC-QW-GaAs or SiC-QD-GaAs (VECSEL) gain chip, and a single, or individual, SiC-QW-SiC or SiC-QD-SiC (MECSEL) gain chip by laser scribing and breaking.

24. A method, device or system according to any of claims 1-23; comprising one or more of: laser scribing by forming a grid of vertical scribe lines and horizontal scribe lines and separating how each individual gain chip from a larger pattern or array of gain chips.

25. A method, device or system according to any of claims 1-24; comprising one or more of: adding a thin layer of dielectric material such as CN or SiN to the surfaces of the heat spreader and the QW or QD, adding a thin layer of dielectric material such as CN or SiN to the surfaces of the heat spreader and the QW to alleviate the bonding resistance and help the surfaces of the heat spreader and QW bond; the surfaces of the heat spreader and the QW may have some resistance and/or difficulty in forming a solid and complete optical bond depending on the material compatibility; choosing the thickness of the film to minimize optical reflectivity between the heat spreader and the QW or QD; choosing the thickness of the film to minimize optical reflectivity between the heat spreader and the QW for the reflectivity vs. thickness of the film to have a refraction index of n=1.7; choosing the thickness of the film to minimize optical reflectivity between the heat spreader and the QW, the thickness being about 200 nm.

26. A method, device or system according to any of claims 1-25; comprising one or more of: a semiconductor including a conduction band and a valence band.

27. A method, device or system according to any of claims 1-26; comprising one or more of: a quantum well being a depression in one or both the valence and conduction bands; increasing the quantum efficiency of a barrier pumped laser by pumping photons; boosting an electron from the valence band of the bulk into the conduction band; maximizing the quantum efficiency in a barrier pumped laser, a QW hereof, absorbing pump light as close as about 6% difference in the photon energy between the pumping wavelength and the lasing wavelength; using 640 nm as pumping light to produce 680 nm light; using a difference between 640 nm and 680 nm being approximately 6%.

28. A method, device or system according to any of claims 1-27; comprising one or more of: increasing the quantum efficiency for in-well pumped lasers; increasing the quantum efficiency for in-well pumped lasers; in which the pump light is absorbed solely in the quantum wells; increasing the quantum efficiency for in-well pumped lasers; where the pump photon lifts an electron from a level in the quantum well's valance band to the conduction band; increasing the quantum efficiency for in-well pumped lasers; where the pump photon lifts an electron from a level in the quantum well's valance band to the conduction band, the QW absorbing light as close as approximately 3% difference in the photon energy between the pumping wavelength and the lasing wavelength increasing the quantum efficiency for in-well pumped lasers; where the pump photon lifts an electron from a level in the quantum well's valance band to the conduction band; for in-well pumped laser hereof, the pumping wavelength is 660 nm and the lasing wavelength is 680 nm; increasing the quantum efficiency for in-well pumped lasers; where the pump photon lifts an electron from a level in the quantum well's valance band to the conduction band, maximizing the generated visible light power by combining SiC contact cooling and in-well pumping.

29. A method, device or system according to any of claims 1-28; a barrier-pumped laser comprising one or more of: a pump photon pumped into a barrier of a conduction band; the pumping of the pump photon into the barrier creating an electron hole pair in the barrier; the electron hole pair migrating to one of the one or more quantum wells recombining to create a laser photon.

30. A method, device or system according to any of claims 1-28; an in-well pumped laser comprising one or more of: a pump photon pumped into a well of a conduction band; the pump photon being absorbed in one of the one or more quantum wells, creating an electron-hole pair in the quantum well, relaxing to a ground state, recombining into a laser photon; the difference in energy between pump and laser photon, the quantum defect, being deposited as heat in the heat spreaders.

31. A method, device or system according to any of claims 1-30; a UV laser comprising one or more of: a MECSEL including a MECSEL gain chip that further has one or more MECSEL quantum wells, placing the MECSEL gain chip at the Brewster angle θ.sub.B or the polarization angle relative to the optical path; a MECSEL gain chip that further has one or more MECSEL quantum wells, placing the MECSEL gain chip at the Brewster angle θ.sub.B or the polarization angle relative to the optical path to eliminate an AR coating on the MECSEL's gain chip for Visible Wavelength Laser Light Source; a MECSEL gain chip that further has one or more MECSEL quantum wells, placing the MECSEL gain chip at the Brewster angle θ.sub.B or the polarization angle relative to the optical path, the Brewster angle reducing optical loss due to imperfect coating on the gain chip.

32. A method, device or system according to any of claims 1-31; a UV laser comprising one or more of: a VECSEL gain chip having one or more quantum wells (“QW” or “VECSEL QW” or QD) being the semiconductor gain media for the laser; the VECSEL gain chip being an electrically or optically pumped semiconductor thin disk gain media, that is also a first cavity mirror; an NLC placed in the output or optical path, the NLC producing UV light as the output passes through the NLC; the UV light then traveling and passing through a partial reflecting cavity mirror; the gain chip containing an intra-cavity SiC heat spreader with a thin layer of CN or SiN coating between the heat spreader and the GaAs wafer.

33. A method, device or system according to any of claims 1-32; a UV laser comprising one or more of: a VECSEL with a cavity that contains a VECSEL gain chip that has one or more quantum wells and an NLC placed inside the cavity; and a BFP placed in the output or optical path, and a first specialized mirror placed after the BFP in line with the optical path; the first specialized mirror having an inner surface coated to reflect on VWL and high transmission of UV to extract UV light; the first specialized mirror being angled to reflect the output through an NLC and toward a second specialized mirror; the second specialized mirror having an inner surface coated to reflect both VWL and UV wavelengths; and the second specialized mirror reflecting the UV laser output through the NLC and back through the first specialized mirror.

34. A method, device or system according to any of claims 1-33; a UV laser comprising one or more of: a MECSEL a with a cavity that contains a MECSEL gain chip that has one or more quantum wells and an NLC placed inside the cavity; and a BFP placed in the output or optical path; and a first mirror placed after the BFP in line with the optical path; the first mirror being specialized and having an inner surface coated to reflect on VWL and transmission of UV to extract UV light; the first specialized mirror being angled to reflect the output through the NLC and toward a second specialized mirror; the second specialized mirror having an inner surface coated to reflect both VWL and UV wavelengths; and the second specialized mirror reflecting the UV laser output through the NLC and back through the first specialized mirror; a third mirror placed behind the MECSEL's gain chip to reflect back the VWL.

35. A method, device or system according to any of claims 1-34; a UV laser comprising one or more of: a VECSEL including a VECSEL gain chip that has one or more quantum wells (“QW” or “VECSEL QW” or QD) providing electrically or optically pumped semiconductor gain media for the laser; the semiconductor thin disk gain media, or gain chip, also serving as a first cavity mirror; an NLC placed in the output or optical path, the NLC producing UV light as the output passes through the NLC, the UV light then traveling and passing through the partial reflecting cavity mirror; the gain chip containing an intra-cavity SiC heat spreader with a thin layer of CN or SiN coating between the heat spreader and the GaAs wafer.

36. A method, device or system according to any of claims 1-35; a UV laser comprising one or more of: an in-well pumped MECSEL including a MECSEL assembly, the MECSEL assembly including one or more SiC heat spreaders that may optionally have CN or SiN film layers; pumping light optics positioned around the MECSEL to assist in in-well pumping; a laser cavity enclosing the in-well pumped MECSEL therewithin inside the laser cavity, providing for extracting a few watts of visible light power from the cavity by using one or more cavity mirrors; an NLC positioned in the output or optical path to convert VWL to stable UV light; a second cavity mirror located at the opposite end of the cavity, as the first cavity mirror; providing an in-well pumped MECSEL where the MECSEL QW is sandwiched between CTE compatible heat spreaders to support multi-frequency of high intensity VWL output; red light pumping to pump the MECSEL QW; an NLC PPLT/PPLST or PP-LBGO of appropriate length utilized to convert the multi-frequency output to stable UV light.

37. A method, device or system according to any of claims 1-36; a UV laser comprising one or more of: an arrangement of a VECSEL that provides a wide range of UV power output through the use of additional optics; providing a VECSEL including a VECSEL gain chip that has one or more quantum wells (“QW” or “VECSEL QW” or QD) providing electrically or optically pumped semiconductor gain media for the laser; the electrically or optically pumped semiconductor thin disk gain media, or gain chip also serving as a first cavity mirror; an NLC placed in the output or optical path the NLC serving to produce UV light as the output passes through the NLC, the UV light then traveling and passing through the partial reflecting cavity mirror, or end mirror; the gain chip containing an intra-cavity SiC heat spreader with a thin layer of CN or SiN coating between the heat spreader and the GaAs wafer; providing a focusing lens.

38. A method, device or system according to any of claims 1-37; a UV laser comprising one or more of: additional elements to increase the power output of the UV laser; additional optics and/or a focusing lens.

39. A method, device or system according to any of claims 1-38; a UV laser comprising one or more of: a focusing lens having a focal length of F1; an end mirror having a radius of curvature of R2; distances: D1, D2, and D3; D1 representing the distance between the surface of the gain chip and the focusing lens; D2 representing the distance between the focusing lens and an NLC; and D3 representing the distance between the NLC and the end mirror.

40. A method, device or system according to claim 39; a UV laser comprising one or more of: operating the laser may be operated at a wide range of power levels; operating the laser may be operated at a wide range of power levels by adjusting the UV power output by setting the F1/R2 to be equal to approximately 1 and the value of D1/(D2+D3) to be equal to approximately 2.

41. A method, device or system according to any of claims 1-40; a UV laser comprising one or more of: an in-well pumped MECSEL including a MECSEL assembly comprising: one or more SiC heat spreaders optionally having CN or SiN film layers; pumping light optics positioned around the MECSEL for in-well pumping; extracting visible light power by enclosing the in-well pumped MECSEL inside a laser cavity, the extracting from the cavity by using one or more cavity mirrors. positioning wavelength selecting and limiting optics in the output or optical path, to select and limit the VWF output.

42. A method, device or system according to any of claims 1-41; a UV laser comprising one or more of: a second cavity mirror located at the opposite end of the cavity, relative to the first cavity mirror; reflecting VWF output a second cavity mirror through an NLC to convert the multi-frequency output to UV light; reflecting UV light by a third cavity mirror back as a UV output; providing an in-well pumped MECSEL where the one or more MECSEL QW or QD are sandwiched between CTE compatible heat spreaders to support multi-frequency of high intensity VWL output; red light pumping to pump the one or more MECSEL QW or QD; NLC being one or more of PPLT/PPLST or PP-LBGO of appropriate length to convert the multi-frequency output to stable UV light.

43. A method, device or system according to any of claims 1-42; a UV laser comprising one or more of: utilizing a highly multimode operation to eliminate a feedback loop related to power stability; an STDL having a bandwidth larger than several nm which contains multiple frequencies; an STDL providing a stable VWLS at ˜1 nm of bandwidth; controlling bandwidth by adding a wavelength limiting optics such as a birefringent filter plate (BFP) depending on the bandwidth requirement; using highly multimode operation to provide temporally stable high intensity VWLS; to avoid the mode beating problem while also avoiding single mode operation resulting in power instability due to the cavity length change with temperature; using a highly multimode operation to avoid a complicated feedback system to maintain the power stability.

44. A method, device or system according to any of claims 1-43; a UV laser comprising one or more of: selecting a proper NLC to be used in a UV laser device; selecting a proper NLC to be used in a UV laser device having one or more of: (1) transparency in the corresponding VWL and UV wavelengths; (2) a high non-linear coefficient; (3) a large band width to support multiple frequencies simultaneously; and (4) a minimum walk-off angle. selecting a proper NLC to be used in a UV laser device including one or more of: an exemplar NLC providing on or more of: (a) periodically poled crystal such as Lithium Tantalate (PPLT or PPSLT); and/or, (b) periodically poled LaBGeO.sub.5 (PPLBGO); for both PPLT and PPLBGO, either first, second, or higher order can be used; selecting a proper NLC to be used in a UV laser device; one or more of: the bandwidth requirement placing a limit on the maximum length of the NLC; a cavity length of 60 mm having mode spacing of 2.5 GHz (˜0.004 nm at 680 nm); a 1.6 mm long PPSLT having 0.1 nm band width of full width at half maxima (FWHM) which allows ˜25 frequencies to oscillate inside such a cavity; a bandwidth and UV conversion efficiency at two NLC lengths under similar VWLS power density; an NLC length that is governed by the bandwidth requirement of the FWHM.

45. A method, device or system according to any of claims 1-44; a UV laser comprising one or more of: a walk-off compensated NLC to satisfy a minimum walk-off requirement; a pair of beta-Barium Boron Oxide (BBO) optics with substantially same or similar phase matching angles arranged in the opposite direction to bring a deviated beam (2w) back to center again; reducing spacing between these two BBOs to about zero or in optical contact.

46. A method, device, or system according to claims 1-45, comprising: a cavity; at least one external energy source configured to provide electrical or optical pumping energy; a semiconductor thin disc gain media enclosed within the cavity having one or more quantum wells configured to receive and transform electrical or optical pumping energy from the external energy source and produce multi-frequency high intensity visible wavelength laser light; a heat spreader; a non-linear crystal configured to convert the visible wavelength light to ultra-violet light; and one or more mirrors.

47. A method, device, or system according to claims 1-46, wherein the external energy source is red optical light.

48. A method, device, or system according to claims 1-47, wherein the semiconductor thin disc gain media further comprises a cavity mirror.

49. A method, device, or system according to claims 1-48, wherein a thin layer of CN or SiN is layered between the heat spreader and the quantum wells.

50. A method device, or system according to claims 1-49, wherein one mirror is disposed opposite of the semiconductor thin disc gain media.

51. A method, device, or system according to claims 1-50, wherein the mirror that is disposed opposite of the semiconductor thin disc gain media has an inner surface with a high reflection coating for visible wavelength light and high transmission for ultra-violet light.

52. A method, device, or system according to claims 1-51, comprising: a cavity; at least one external energy source configured to provide electrical or optical pumping energy; a semiconductor thin disc gain media enclosed within the cavity having one or more quantum wells configured to receive and transform electrical or optical pumping energy from the external energy source and produce multi-frequency high intensity visible wavelength laser light; a heat spreader; a non-linear crystal configured to convert the visible wavelength light to ultra-violet light; and one or more mirrors.

53. A method, device, or system according to claims 1-52, wherein the thin disc gain media is selected from either a MECSEL or a VECSEL.

54. A method, device, or system according to claims 1-53, wherein the MECSEL or VECSEL is stimulated by either barrier pumping or in-well pumping.

55. A method, device, or system according to claims 1-54, wherein the non-linear crystal is selected from the group of periodically poled lithium tantalite, periodically poled stoichiometric lithium tantalite, and periodically poled LaBGeO.sub.5.

56. A method, device, or system according to claims 1-55, further comprising pumping light optics arranged in the cavity to increase the intensity of the pumped light from the external source.

57. A method, device, or system according to claims 1-56, further comprising a focus lens.

58. A method, device, or system according to claims 1-57, further comprising selecting a focus lens having a focal length of F1, selecting an end mirror having a radius of curvature of R2, wherein F1/R2 is equal to approximately 1.

59. A method, device, or system according to claims 1-58, further comprising arranging the distance between the surface of the VECSEL or MECSEL gain chip and the focusing lens to be D1; arranging the distance between the focusing lens and the NLC to be D2; and arranging the distance between the NLC and the end mirror to be D3, so that the value of D1/(D2+D3) is equal to approximately 2.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0009] For a detailed description of exemplary implementations of the developments, reference will now be made to the accompanying drawings in which:

[0010] FIG. 1A shows a schematic overview of a VECSEL in accordance with at least some implementations hereof;

[0011] FIG. 1B shows a schematic overview of a MECSEL in accordance with a least some implementations hereof;

[0012] FIG. 2 provides a sectional view of the layers of a quantum well (QW) or QD of a VECSEL gain chip (not to scale), hereof;

[0013] FIG. 3 provides a sectional view of the layers of a gain region of a quantum well (QW) or QD of a MECSEL gain chip (not to scale) hereof;

[0014] FIG. 4 provides a sectional view of the layers of a gain region of a quantum well (QW) of a MECSEL using SiC as heat spreaders (not to scale) hereof;

[0015] FIG. 5A provides an exemplary pattern related to forming of wafers for VECSELs and/or MECSELs hereof;

[0016] FIG. 5B shows an exemplary pattern for laser scribing and breaking to form single gain chips for VECSELs and/or MECSELs hereof;

[0017] FIG. 6 provides a graph of reflectivity versus the thickness of a thin film that may be placed between a QW and an SiC wafer;

[0018] FIG. 7 shows a schematic overview of a MECSEL where a gain chip is placed at the Brewster's angle relative to the optical path;

[0019] FIG. 8 provides a graph that demonstrates the relative intensity versus the wavelength (bandwidth and UV conversion efficiency) for two Non-Linear Crystals (NLCs) lengths under similar Visible Wavelength Laser Light Source (VWLS) conditions;

[0020] FIG. 9 provides a graph of Full Width at Half Maxima (FWHM) plotted versus Periodically Poled Stoichiometric Lithium Tantalate (PPSLT) length;

[0021] FIG. 10 provides a schematic overview of a basic UV laser using VECSEL in accordance with at least some implementations hereof;

[0022] FIG. 11 provides a schematic overview of a UV laser using VECSEL in accordance with at least some implementations hereof;

[0023] FIG. 12 provides a schematic overview of a UV laser using MECSEL in accordance with at least some implementations hereof;

[0024] FIG. 13 provides a schematic overview of a walk-off compensated NLC in accordance with at least some implementations hereof;

[0025] FIG. 14 provides a schematic overview of an electrically or optically pumped VECSEL hereof;

[0026] FIG. 15 shows a schematic overview of an in-well pumped MECSEL in a straight cavity hereof;

[0027] FIG. 16 provides a schematic overview of some alternative additional optics and distances of an exemplary VECSEL, in accordance with at least some implementations hereof;

[0028] FIG. 17 provides a schematic overview of a MECSEL in a V-shaped cavity with an in-well pumping layout;

[0029] FIG. 18A provides a side view of a valence band and conduction band of the quantum well of an exemplar gain chip hereof;

[0030] FIG. 18B provides a side view of a barrier-pumped laser hereof;

[0031] FIG. 18C provides a side view of an in-well pumped laser hereof;

[0032] FIG. 19A provides a side view schematic diagram of an alternative barrier-pumped laser hereof; and

[0033] FIG. 19B provides a side view schematic diagram of an alternative in-well pumped laser hereof.

DETAILED DESCRIPTION

[0034] The following discussion is directed to various implementations of the developments hereof. Although one or more of these implementations may be preferred, the implementations disclosed should not be interpreted, or otherwise used, as or for limiting the scope of the disclosure, including the claims. In addition, one skilled in the art will understand that the following description has broad applications, and the discussion of any implementation is meant only to exemplary of that implementation and is not intended to intimate that the scope of the disclosure, including the claims, is limited to that implementation.

[0035] Various example implementations are directed to UV lasers, and more particularly to UV lasers that may provide for the efficient and temporally stable generation of UV light from a Visible Wavelength Laser Light Source (VWLS), by using a laser cavity supporting multiple frequencies of VWLS and using length optimized non-linear optics to double the visible frequencies inside the laser cavity into UV light. The specification first turns to a high-level overview of UV lasers in example systems.

[0036] As a first note, to achieve visible light to UV conversion there are two elements that may need to be met: (1) temporally stable high intensity of visible light, and (2) a proper non-linear crystal, or periodically poled material to convert the visible light into UV light.

[0037] FIG. 1A shows a simplified schematic overview of a VIS laser 100 (part of the UV laser), here a VECSEL 110, and FIG. 1B shows a simplified schematic overview of a VIS laser 100 (part of the UV laser), here a MECSEL 210, in accordance with example systems hereof. Myriad other forms of UV or VIS lasers, whether alternative VECSELs or MECSELs, or otherwise, may fit within the scope hereof with no requirement to be limited to the implementations shown, whether in FIGS. 1A or 1B, or otherwise; limited only by the proper scope of the claims appended hereto.

[0038] FIG. 1A shows a VECSEL 110 that has a VECSEL gain chip 150 that has one or more quantum wells 120 (“QW” or “VECSEL QW” or a quantum dot, “QD”) which may then be the semiconductor gain media for the laser. The gain chip may include one or more laser cavities. The QW 120 may be disposed and/or enclosed inside a corresponding laser cavity, and a few watts of visible light power may, as a result of the enclosing, be extracted from the cavity by using one or more partial or fully reflecting cavity mirrors 130. The cavity mirror 130 can be a dielectric coated mirror or Volume Bragg Grating (VBG) mirror. VBG mirror can also serve as wavelength selecting and limiting device. The VECSEL QW 120 may then generate an output 140. Note, the output or light 140 is the VIS light inside cavity mirrors 130; whereas the further outside output or light 141 is the VIS output outside the cavity mirrors 130. Light intensity inside and outside has a ratio depending on the coating on mirrors 130 and 230. The VECSEL QW 120 may be electrically or optically pumped for the VECSEL QW 120 to produce an output 140. Between the cavity mirrors, the confined visible light 140 power intensity may be at least a factor of 10 or more than its power 141 outside of the cavity mirrors 130. A typical enhancement factor is between 40 and 100 when all cavity mirrors are highly reflective. Thus, a semiconductor thin disc laser cavity, and particularly a VECSEL cavity may provide the necessary visible high intensity light 140 to provide the required temporally stable high intensity visible light 141 requisite for a UV laser.

[0039] Alternatively, FIG. 1B shows a UV or VIS laser 100 that may utilize a MECSEL 210 setup. Here, the MECSEL includes a MECSEL gain chip 250 that further comprises MECSEL quantum wells 220 (“QW” or “MECSEL QW”) which may then be the semiconductor gain media for the laser. Like the VECSEL setup described above relative to FIG. 1A, the gain chip may include one or more laser cavities. The QW 220 may be disposed and/or enclosed inside a corresponding laser cavity, and a few watts of visible light power may be extracted from the cavity by using one or more partial or fully reflecting cavity mirrors 230. The MECSEL QW 220 may be electrically or optically pumped for the MECSEL QW 220 to produce an output 141. As mentioned above relative to FIG. 1A, the confined visible light 140 power intensity may be at least a factor of 10 or more than its power outside of the cavity mirrors and typically an enhancement factor between 40 and 100 may be achieved when all cavity mirrors are highly reflective. In this way, a MECSEL cavity may provide the necessary visible high intensity light 140 to provide the required temporally stable high intensity visible light required for a UV laser.

[0040] The VECSEL QW of FIG. 1A and the MECSEL QW of FIG. 1B may require proper cooling to ensure high power operation. In order to ensure proper cooling of the QWs the gain region of both the VECSEL gain chip and the MECSEL gain chip a layered structure or layered arrangement may be employed. In this technique, heat spreaders and reflectors with desirable characteristics may be layered, or sandwiched, around the QW structure.

[0041] Thus, FIG. 2 provides a sectional view of the layers of the gain region 160 for the VECSEL gain chip 150. A heat spreader 170 may be the first layer of a VECSEL structure. The material, or composition, for the heat spreader 170 may be selected from diamond, SiC, or any high-thermal conducting optics can be used as/for a cooling device. In some instances, using SiC instead of diamond as the heat spreader may provide some additional benefit as further discussed below in relation to FIG. 4. In FIG. 2, the second layer is the VECSEL QW 120, and the third layer is a distributed bragg reflector (DBR) 172. One characteristic of the DBR is that the DBR may have high thermal resistance and thus will not help the cooling of the VECSEL as electrical or optical pumping power increases.

[0042] Further, FIG. 3 shows a sectional view of the layers of the gain region 260 for the MECSEL gain chip 250. A heat spreader 170 may be the first layer of a MECSEL structure. Again, the material, or composition, for the heat spreader 170 may be selected from diamond, SiC, or any high thermal conducting optics. In FIG. 3, the second layer is the MECSEL QW 220, and the third layer is again a heat spreader 170. As shown, the MECSEL's QW layered structure does not have a DBR structure or layer; instead, the additional cooling is achieved by sandwiching the MECSEL QW structure between two cooling devices, or heat spreaders.

[0043] As previously mentioned, using SiC as the heat spreader, instead of diamond or other materials, may provide some additional benefit because SiC has a coefficient of thermal expansion (CTE) that that is very similar to that of GaAs and of QW material. VECSELs and MECSELs are often grown on gallium arsenide (GaAs) wafers and thus using SiC as a heat spreader may provide an efficient heat removal material. FIG. 4 provides a sectional view of the gain region 260 for a MECSEL gain chip 250. In this FIG. 4, the MECSEL QW 220 is sandwiched, or layered, between layers of SiC 174. As the pumping power increases, more waste heat must be removed from the QW 220. In this implementation, SiC layers 174 are used as efficient heat removal material. SiC has a CTE of approximately 4×10.sup.−6 /K which is closer to the QW's CTE (where wafer is made from GaAs and QW is GaInP/AlGaInP/GaAs) which is approximately 5×10.sup.−6 /K than diamond which has a CTE of approximately 1×10.sup.−6 /K. At higher power operations, the temperature of the QW may rise as high as 60° C. and a mismatch of CTE, like that of diamond, may cause the device to fracture or overheat and fail. Thus, SiC may avoid this problem as its CTE value is closer to that of GaAs/QW as used in the wafer of the QW.

[0044] In one implementation the subject matter hereof may provide for a method of producing a VECSEL gain chip or a MECSEL gain chip, where the QW structure is first grown on the desired substrate, or wafer, such as GaAs. The GaAs substrate typically may have a thickness of 0.2-0.5 mm depending on the wafer diameter. After the QW is grown on the substrate the selected and/or specified heat spreader such as SiC is optically bonded to the QW-GaAs wafer. Optical bonding involves one wafer conforming to the other wafer to maintain good optical and thermal contact. It is noted that, SiC is a hard material which is relatively stiff compared to GaAs which is relatively soft and in some instances brittle. Thus, in order to achieve optical bonding, it may be advantageous to reduce the QW-GaAs wafer thickness from the GaAs side to around 0.1 mm or less. This reduction in thickness makes the QW-GaAs wafer more flexible. The SiC wafer and the thin, or reduced thickness, QW-GaAs wafer are surface activated and pressed together using a bonding process in a standard optical bonding machine such as EVP Group's EVG500 series under high vacuum conditions, such as 10.sup.−7 torr or better. For a VECSEL QW gain chip, only one optical bonding is needed as one side of the VECSEL gain chip is covered by a DBR, as shown in FIG. 2.

[0045] For a MECSEL QW gain chip, after SiC-QW-GaAs becomes one single wafer assembly, the assembly is dipped into acid solution such as H.sub.2SO.sub.4:H.sub.2O.sub.2:H.sub.2O, or concentrated sulfuric acid, or NH.sub.4OH:H.sub.2O.sub.2 to remove the GaAs selectively. Following this acid wash, only the thin QW layer is left on the SiC wafer. A second SiC wafer is then activated and pressed to the SiC-QW, utilizing the bonding process in a standard optical bonding machine under high or ultra high vacuum conditions, described above. The result is the formation of a single SiC-QW-SiC wafer, as shown in FIGS. 3 and 4.

[0046] The SiC-QW-GaAs (VECSEL) wafer and the SiC-QW-SiC (MECSEL) wafer are further processed by applying an anti-reflection (AR) coating and metallization with the pattern 180 as shown in FIG. 5A. The single, or individual, SiC-QW-GaAs (VECSEL) gain chips, and the single, or individual, SiC-QW-SiC (MECSEL) gain chips are then produced by laser scribing and breaking as shown in FIG. 5B. Specifically, the vertical scribe lines 190 and the horizontal scribe lines 192 may form a grid and thus show one exemplary manner for laser scribing and how each individual gain chip might be separated from the larger pattern or array of gain chips 180.

[0047] The surfaces of the heat spreader and the QW may have some resistance and/or difficulty in forming a solid and complete optical bond depending on the material compatibility. Adding a thin layer of dielectric material such as CN or SiN to the surfaces of the heat spreader and the QW, may help alleviate the bonding resistance and help the surfaces of the heat spreader and QW bond. The thickness of the film must be chosen properly to minimize optical reflectivity between the heat spreader and the QW. FIG. 6 provides a graph that shows the reflectivity vs. thickness of the film with a refraction index of n=1.7. Accordingly, the best choice for the thickness is 200 nm in this case.

[0048] FIG. 18A provides a schematic overview of a semiconductor including the conduction band 410 and valence band 412. A quantum well 414 is a depression in the semiconductor's valence and conduction bands. One implementation hereof may include increasing the quantum efficiency of a barrier pumped laser 430. In a barrier-pumped laser 430, such as the schematic overview provided in FIG. 18B, pump photons 418 boost an electron 416 from the valence band 412 of the bulk into the conduction band 410. In order to maximize the quantum efficiency in a barrier pumped laser, a QW hereof, is designed to absorb pump light as close as 6% difference in the photon energy between the pumping wavelength and the lasing wavelength. For example, in the developments hereof, one implementation uses 640 nm as pumping light to produce 680 nm light. The difference between 640 nm and 680 nm is approximately 6%, which by comparison is significantly less than other laser designs which may use 532 nm pumping wavelength to produce 680 nm lasing wavelength, which is approximately a 28% difference between the photon energy between the pumping wavelength and the lasing wavelength.

[0049] In yet another implementation of the present developments hereof, the quantum efficiency may be further increased for in-well pumped lasers. In-well pumped lasers refers to the structure and methods utilized in lasers, in which the pump light is absorbed solely in the quantum wells. FIG. 18C provides an in-well-pumped laser 440, where the pump photon 418 lifts an electron 416 from a level in the quantum well's valance band 412 to the conduction band 410. In one implementation of the developments hereof, the QW is designed to absorb light as close as approximately 3% difference in the photon energy between the pumping wavelength and the lasing wavelength. In one implementation, for in-well pumped laser hereof, the pumping wavelength is 660 nm and the lasing wavelength is 680 nm. Furthermore, combining SiC contact cooling and in-well pumping together may maximize the generated visible light power. The in-well pumping structures, methods, and techniques may be known to those skilled in the art, and are also disclosed in, several publications for example, “Direct Pumping of Quantum Wells Improves Performance of Semiconductor Thin-Disk Lasers” Photonics Spectra (June 2005) and “Enhanced Efficiency of AlGaInP Disk Laser by In-well Pumping” Optics Express, p. 2472 (2015).

[0050] FIG. 7 shows a schematic overview of an alternative implementation and arrangement of a MECSEL. In particular, FIG. 7 shows UV or VIS laser 100, here a MECSEL 210 includes a MECSEL gain chip 250 that further has one or more MECSEL quantum wells 220 (“QW” or “MECSEL QW”) which may provide the semiconductor gain media for the laser. Like the MECSEL described in FIG. 1A above, by enclosing the QW 220 inside a laser cavity, a few watts of visible light power can be extracted from the cavity by using one (or more) partial reflecting cavity mirror(s) 230. When electrically or optically pumped, the MECSEL QW 220 produces an output or VIS 140. Note that in this alternative implementation, that to eliminate that AR coating on the MECSEL's gain chip for VWL the MECSEL gain chip 250 is placed at the Brewster angle θ.sub.B (or a polarization angle) relative to the optical path. The Brewster angle may help avoid some amount of optical loss due to imperfect coating on the gain chip.

[0051] In one implementation of the current developments utilizing a highly multimode operation may be included which may eliminate a feedback loop related to power stability. The STDL has a bandwidth larger than several nm which contains multiple frequencies. The STDL may provide the stable VWLS at ˜1 nm of bandwidth. The bandwidth can be further controlled by adding a wavelength limiting optic such as a birefringent filter plate (BFP) depending on the bandwidth requirement. Using the above described highly multimode operation, this alternative implementation may be able to provide temporally stable high intensity VWLS. This alternative feature may allow the developments hereof to avoid the mode beating problem while also avoiding single mode operation which may result in power instability due to the cavity length change with temperature. Moreover, by using a highly multimode operation, the implementations hereof may also be able to avoid a complicated feedback system to maintain the power stability, which may be a desirable characteristic for a UV laser.

[0052] The selection of the proper NLC to be used in a UV laser device hereof may need to have specific properties and characteristics to produce the desired UV light. These properties and characteristics, may include, but are not limited to: (1) transparent in the corresponding VWL and UV wavelengths; (2) a high non-linear coefficient; (3) a large band width to support multiple frequencies simultaneously; and (4) a minimum walk-off angle. Exemplar NLCs that provide the desired characteristics may include: (a) periodically poled crystal such as Lithium Tantalate (PPLT or PPSLT); and/or, (b) periodically poled LaBGeO.sub.5 (PPLBGO). For both PPLT and PPLBGO, either first, second, or higher order can be used.

[0053] FIG. 8 provides a graph that demonstrates the relative intensity versus the wavelength (bandwidth and UV conversion efficiency) for two Non-Linear Crystals (NLCs) lengths under similar Visible Wavelength Laser Light Source (VWLS) conditions. FIG. 8 further demonstrates that that the NLC length must be chosen properly, and that the length of the NLC plays an important role in the preferred function of the UV laser. Longer crystals may provide higher conversion efficiency but limits the band width. Therefore, the bandwidth requirement places a limit on the maximum length of the NLC. A cavity length of 60 mm has mode spacing of 2.5 GHz (˜0.004 nm at 680 nm). A 1.6 mm long PPSLT has 0.1 nm band width of full width at half maxima (FWHM) which allows ˜25 frequencies to oscillate inside such a cavity. Thus, FIG. 8 demonstrates the bandwidth and UV conversion efficiency at two NLC lengths under similar VWLS power density. Further, FIG. 9 provides a graph that demonstrates that the NLC length is governed by the bandwidth requirement of the FWHM as shown.

[0054] FIG. 10 provides a schematic overview of an exemplary UV laser 101, here a VECSEL 110. The VECSEL 110 includes a VECSEL gain chip 150 that has one or more quantum wells 120 (“QW” or “VECSEL QW”) that may be the semiconductor gain media for the laser. In this example, the electrically or optically pumped semiconductor thin disk gain media, or gain chip, 150, also serves as a first cavity mirror. In FIG. 10, an NLC 270 is placed between 120, 130 in the output or optical path 140, where the NLC serves to produce UV light as the output or VIS 140 passes through the NLC. The UV light then travels and passes through the partial reflecting or specially coated UV transmitting cavity mirror 130. The gain chip 150 contains an intra-cavity SiC heat spreader with a thin layer of CN or SiN coating between the heat spreader and the GaAs wafer as described inter alia.

[0055] FIG. 11 provides yet another schematic overview of an alternative implementation of a UV laser 101, here a VECSEL 110. In this configuration, the NLC 270 is placed inside the cavity that contains a VECSEL gain chip 150 that has one or more quantum wells 120. In this implementation, a BFP 280 is placed in the output or optical path 140. In this implementation a first specialized mirror 132 is placed after the BFP in line with the optical path. The first specialized mirror 132 is unique in that it has an inner surface coated to reflect on VWL and high transmission of UV to extract UV light. The first specialized mirror 132 is angled to reflect or direct the output or VIS 140 through an NLC 270 and toward a second specialized mirror 134. The second specialized mirror 134 has an inner surface coated to reflect both VWL and UV wavelengths. The second specialized mirror 134 reflects the UV laser output or beam 142 through the NLC 270 and back through the first specialized mirror 132. Thus, the UV light generated in both directions, the left bound one is reflected by the second cavity mirror 134 back to merge with the right bound one as a single UV output 142. In this way, a stable VECSEL based UV laser output 142 is achieved.

[0056] FIG. 12 provides yet another schematic overview of an alternative implementation of a UV laser 101 that utilizes a MECSEL 210. In this implementation, the NLC 270 is placed inside the cavity that contains a MECSEL gain chip 250 that has one or more quantum wells 220. In this implementation, a BFP 280 is placed in the output 140 or optical path 140. A first mirror 132 is placed after the BFP but in line with the optical path. The first specialized mirror 132 is unique in that it has an inner surface coated to reflect on VWL and transmission of UV to extract UV light. The first specialized mirror 132 is angled to reflect or direct the output or VIS 140 through an NLC 270 and toward a second specialized mirror 134. The second specialized mirror 134 has an inner surface coated to reflect both VWL and UV wavelengths. The second specialized mirror 134 reflects the UV laser output through the NLC 270 and back through the first specialized mirror 132. Thus, the UV light generated in both directions, the left bound one is reflected by the second cavity mirror 134 back to merge with the right bound one as a single UV output 142. A third mirror 136 is placed behind the MECSEL's gain chip 250 to reflect back the VWL. By using mirrors 136, 132, and 134 together, a stable VIS cavity is achieved. In this way, a stable MECSEL based UV laser is achieved.

[0057] FIG. 13 provides a schematic overview of a walk-off compensated NLC in accordance with at least some implementations of developments hereof. A walk-off compensated NLC available from the crystal supplier may be used to satisfy a minimum walk-off requirement. For example, FIG. 13 provides a pair of beta-Barium Boron Oxide (BBO) optics 300 with the same phase matching angle are arranged in the opposite direction to bring the deviated beam (2ω) 310 back to center again. The spacing between these two BBOs 300 can be reduced to zero or in optical contact.

[0058] FIG. 14 provides a UV laser 101, here a VECSEL 110. The VECSEL 110 includes a VECSEL gain chip 150 that has one or more quantum wells 120 (“QW” or “VECSEL QW”) which may provide the semiconductor gain media for the laser. In this example, the electrically or optically pumped semiconductor thin disk gain media, or gain chip, 150, also serves as a first cavity mirror. In FIG. 14, an NLC 270 is placed in the output or optical path 140, where the NLC serves to produce UV light as the output or VIS passes through the NLC. The UV light then travels and passes through the partial reflecting or specially coated (highly reflective VIS and highly transmissive UV) cavity mirror 130. The gain chip 150 contains an intra-cavity SiC heat spreader with/without a thin layer of CN or SiN coating between the heat spreader and the GaAs wafer as described inter alia.

[0059] FIG. 15 provides a UV laser 101, here an in-well pumped MECSEL 400. The MECSEL assembly 410 includes SiC heat spreaders 420 that may or may not have CN or SiN film layers as described elsewhere in this disclosure. Pumping light optics 430, 432, 434 are positioned at select locations around the MECSEL to recycle the unabsorbed pump light back to MECSEL for multiple passes in the in-well pumping. By enclosing the in-well pumped MECSEL 400 inside a laser cavity, a few watts of visible light power can be extracted from the cavity by using one (or more) cavity mirror(s) 230/440. An NLC 270 is positioned in the output 140, or optical path 140, to convert VWL to stable UV light 142. A second cavity mirror is located at the opposite end of the cavity, as the first cavity mirror 442. Thus, FIG. 15 provides an in-well pumped MECSEL 400 where the MECSEL QW 220 is sandwiched between CTE compatible heat spreaders 420 to support multi-frequency of high intensity VWL output 140. In this implementation, red light pumping 450 is used to pump the MECSEL QW 220. In FIG. 15, an NLC 270 such as PPLT/PPLST or PP-LBGO of appropriate length may be utilized to convert the multi-frequency output 140, into stable UV light 142. Other variations and implementations, of such a configuration may be employed to create a stable UV light 142 as further disclosed and described inter alia.

[0060] FIG. 16 provides schematic overview of an arrangement of a VECSEL that may provide and enable a wide range of UV power output through the use of additional optics. FIG. 16 provides a UV laser 101, here a VECSEL 110. The VECSEL 110 includes a VECSEL gain chip 150 that has one or more quantum wells 120 (“QW” or “VECSEL QW”) which may be or provide the semiconductor gain media for the laser. In this example, the electrically or optically pumped semiconductor thin disk gain media, or gain chip, 150, also serves as a first cavity mirror. In FIG. 16, an NLC 270 is placed in the output or optical path 140, where the NLC 270 serves to produce UV light 142 as the output VIS passes through the NLC 270. The UV light 142 then travels and passes through the partial reflecting or special coated (highly reflective VIS and highly transmissive UV) cavity mirror, or end mirror 138. The gain chip 150 contains an intra-cavity SiC heat spreader with/without a thin layer of CN or SiN coating between the heat spreader and the GaAs wafer as described inter alia. FIG. 16 also provides or includes a focusing lens 290.

[0061] In FIG. 16, additional optics, such as a focusing lens 290 may be utilized to increase the power output of the UV laser. The focusing lens 290 may have a focal length of F1. The end mirror 138 may have a radius of curvature of R2. Also provided in FIG. 16 are distances: D1, D2, and D3; where, D1 represents the distance between the surface of the VECSEL gain chip 150 and the focusing lens 290; D2 represents the distance between the focusing lens 290 and the NLC 270; and D3 represents the distance between the NLC 270 and the end mirror 138. In one aspect, the UV power output may be adjusted by setting the F1/R2 to be equal to approximately 1 and the value of D1/(D2+D3) to be equal to approximately 2. In this manner, the laser may be operated at a wide range of power levels.

[0062] FIG. 17 provides yet another schematic overview of a UV laser 101, here an in-well pumped MECSEL 400. The MECSEL assembly 410 includes SiC heat spreaders 420 that may or may not have CN or SiN film layers as described elsewhere in this disclosure. Pumping light optics 430, 432, 434 are positioned at select locations around the MECSEL to recycle unabsorbed pump light for multiple passes. By enclosing the in-well pumped MECSEL 400 inside a laser cavity, a few watts of visible light power can be extracted from the cavity by using one (or more) cavity mirror(s) 230/440. In this example, a wavelength selecting and limiting optics 292 is positioned in the output or VIS 140, or optical path, to select and limit the VWF output 140. A second cavity mirror 444 is located at the opposite end of the cavity, as the first cavity mirror 440. The VWF output 140 is reflected by the second cavity mirror through an NLC 270 to convert the multi-frequency output or VWF to UV light 142. The UV light is generated in both directions and the left bound one is reflected by a third cavity mirror 134 back to merge with the right bound one as a single UV output 142. Thus, FIG. 17 provides an in-well pumped MECSEL 400 where the MECSEL QW 220 is sandwiched between CTE compatible heat spreaders 420 to support multi-frequency of high intensity VWL output 140. In this implementation, red light pumping 450 is used to pump the MECSEL QW 220. In FIG. 17, an NLC 270 such as PPLT/PPLST or PP-LBGO of appropriate length may be utilized to convert the multi-frequency output VIS 140, to stable UV light 142. Other variations and implementations, of such a configuration may be employed to create a stable UV light 142 as further disclosed and described inter alia.

[0063] FIG. 19A shows an example of a barrier-pumped laser 500. In FIG. 19A, a pump photon 502 is pumped into the barrier 504a of the conduction band 510. The pumping of the pump photon 502 into the barrier 504 creates an electron hole pair 520a, 520b in the barrier 505. The electron hole pair 520a, 520b migrates (as indicated by dashed lines 522a, 522b) to one of the quantum wells 514 where it recombines to create a laser photon 524.

[0064] FIG. 19B shows an example of an in-well pumped laser 600. In FIG. 19B, a pump photon 602 is pumped into a well 614 of the conduction band 610. The pump photon 602 is absorbed in the quantum well 614, which creates an electron-hole pair 620a, 620b in the quantum well 614. After relaxation (as indicated by dashed lines 622a, 622b) to the ground state, it recombines into a laser photon 624. The difference in energy between pump and laser photon, referred to as the quantum defect, is deposited as heat in the heat spreaders, as described in FIGS. 1A, 1B, and 2, inter alia.

[0065] The above discussion is meant to be illustrative of the principles and various implementations of the present developments. Numerous variations, ramifications, and modifications of the basic concept which have not been described may become apparent to those skilled in the art once the above disclosure is fully appreciated. It is intended that all such ramifications and variations be included within the scope of the appended claims and their legal equivalents, and the scope of the invention not be limited by the examples given, or the claims hereof.