Waveguide Connection Structure, Waveguide Chip, Connector, and Method of Manufacturing Waveguide Connection Component, and Waveguide Connecting Method
20220206233 · 2022-06-30
Inventors
Cpc classification
G02B6/3897
PHYSICS
G02B6/4219
PHYSICS
G02B6/305
PHYSICS
G02B6/4232
PHYSICS
G02B6/4257
PHYSICS
International classification
Abstract
A waveguide connection structure consists of a waveguide chip having a waveguide, and a connector having a groove dug in a thickness direction, the waveguide chip and the connector each having a concave-convex portion that fit into each other in a state of being adjacent to each other on the same plane.
Claims
1-8. (canceled)
9. A waveguide connection structure, comprising of a waveguide chip comprising a waveguide and a connector comprising a groove dug in a thickness direction, wherein the waveguide chip comprises a first concave-convex portion and the connector comprises a second concave-convex portion, and wherein the first concave-convex portion and the second concave-convex portion fit into each such that the waveguide chip and the connector are adjacent to each other on a same plane.
10. The waveguide connection structure according to claim 9, wherein: the waveguide chip comprises a first silicon substrate; the connector comprises a second silicon substrate; and the first silicon substrate and the second silicon substrate have a same thickness.
11. The waveguide connection structure according to claim 9, wherein: a first end of a first convex portion of the first concave-convex portion has a tapered shape; and a second end of a second convex portion of the second concave-convex portion has a tapered shape.
12. The waveguide connection structure according to claim 9, further comprising: a locking claw on a convex portion of the first concave-convex portion; and a locking groove on a concave portion of the second concave-convex portion.
13. A waveguide chip comprising: a substrate; and a waveguide on a surface of the substrate, wherein the substrate has a first concave-convex portion arranged along a direction orthogonal to the waveguide in a plan view, and wherein the first concave-convex portion is configured to fit into a second concave-convex portion of another component in a state of the substrate being adjacent to the other component on a same plane.
14. The waveguide chip according to claim 13, wherein the substrate is a silicon substrate.
15. The waveguide chip according to claim 13, wherein a convex portion of the first concave-convex portion has a tapered shape.
16. A connector comprising: a substrate having a groove dug in a thickness direction, wherein the substrate has a first concave-convex portion arranged in a direction orthogonal to the groove as seen in a plan view, wherein the first concave-convex portion is configured to fit into a second concave-convex portion of another component in a state of the substrate being adjacent to the other component on a same plane.
17. The connector according to claim 16, wherein the substrate is a silicon substrate.
18. The connector according to claim 16, wherein a convex portion of the first concave-convex portion has a tapered shape.
19. The connector according to claim 16, wherein the another component is a waveguide chip comprising a waveguide.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS
[0044] Embodiments of the present invention are described below with reference to the drawings.
First Embodiment
[0045]
[0046] The waveguide connection structure 1 according to the present embodiment is composed of a waveguide chip 100 having a waveguide 101, and a connector 110 having a fiber 120, and optically connects the waveguide 101 to the fiber 120. As shown in the drawings, in the waveguide connection structure 1 according to the present embodiment, the waveguide chip 100 and the connector 110 each have concave-convex portions 102, 112 that fit into each other in a state of being adjacent to each other on the same plane.
[0047] The waveguide chip 100 has a first substrate 104 and a waveguide 101 formed on a surface of the first substrate 104. The waveguide 101 is covered by a cladding layer 103 over the first substrate 104. In the present embodiment, the first substrate 104 and the waveguide 101 are both formed of silicon (Si). In addition, the cladding layer 103 is formed of a silicon oxide film (SiO.sub.2). For example, the substrate 104 is a Si substrate with a thickness of 1 mm, and a cross-sectional shape of a cross-section of the silicon waveguide 101 perpendicular to the waveguide direction is rectangular with a width of 0.1 μm and a height of 0.2 μm. In addition, the cladding layer 103 covers the waveguide 101 from above, below, left, and right as seen in a cross-sectional view with a thickness of 2 μm.
[0048] Further, at an end face of the waveguide chip 100 facing the connector 110, a concave-convex portion 102 is formed. That is to say, the first substrate 104 has a concave-convex portion 102, which is arranged along a direction orthogonal to the waveguide 101 in a plan view, and as shown in
[0049] It should be noted that in the drawings, the main components of the waveguide 101 of the waveguide chip 100 and the spot size converter at the chip end face of the waveguide 101 are omitted.
[0050] Meanwhile, the connector 110 is formed of the same materials with the same film thicknesses as the chip 100, and further, a groove 111 is formed in a substrate 114 at a portion in which the fiber is installed. Specifically, the connector 110 has a second substrate 114, and a groove in dug in a thickness direction of the second substrate 114 is formed in the upper surface of the second substrate 114. The substrate 114 has a concave-convex portion 112, which is arranged along a direction orthogonal to the groove 111 in a plan view, and as shown in
[0051] In the present embodiment, the first substrate 104 of the waveguide chip 100 and the second substrate 114 of the connector 110 are formed at the same thickness. Further, in the present embodiment, the second substrate 114, like the first substrate 104 of the waveguide chip 100, is formed of silicon (Si), and further, on the upper surface thereof, like the cladding layer 103 of the waveguide chip 100, a silicon oxide film (SiO.sub.2) layer 113 is formed. Accordingly, if the cladding layer (silicon oxide layer) 103 and the silicon oxide layer 113 formed respectively on the first substrate 104 and the second substrate 114 are made to have the same thickness, then the waveguide chip 100 and the connector 110 will have the same thickness as each other.
[0052] As shown in the drawings, the groove 111 of the connector 110 is formed to extend in a direction away from the waveguide chip 100 from a position of the connector 110 corresponding to an end face of the waveguide 101 in a state where the concave-convex portion 102 of the waveguide chip 100 and the concave-convex portion 112 of the connector 110 fit into each other. At least part of an end of the fiber 120 installed in the connector 110 is accommodated in and positioned by the groove 11.
[0053] The fiber 120 has a core 121. When arranging the fiber 120 on the connector 110, the portion of the fiber 120 protruding from the connector 110 at the opposite side of the waveguide chip 100 may be covered with a resin or the like to protect the fiber 120 from mechanical or chemical irritation.
[0054] In the waveguide connection structure 1 according to the present embodiment, as shown in
[0055] For example, as shown in
[0056] By forming the waveguide chip 100 and the connector 110 constituting the waveguide connection structure 1 according to the present embodiment from the same substrate and by the same process, alignment can be performed in the top view plane of
[0057] In addition, in the cross-sectional view plane of
[0058] Further, while the depth of the groove 11 of the substrate 114 is, for example, 62.5 μm, corresponding to the radius of the fiber 120, this depth can be made with a precision (0.1 μm) fit for microfabrication by controlling the etching time and conditions.
[0059] A production method of the components constituting the waveguide connection structure according to the present embodiment, namely the waveguide chip 100 and the connector 110, will be described with reference to
[0060] First, a wafer, such as the one shown in
[0061] Specifically, first, a SOI (Silicon On Insulator) wafer substrate is prepared (
[0062] Next, the waveguide 101 is formed by forming a resist pattern of the waveguide on the SOI layer by lithography, patterning the Si layer by dry etching using the resist pattern as a mask, and removing the resist pattern (S42).
[0063] Next, SiO.sub.2 is deposited using a plasma CVD (Chemical Vapor Deposition) technique at a thickness of 2 μm to form the cladding layer 103 (S43).
[0064] Then, a resist pattern with open regions corresponding to the through holes 301a, 301b, 301c, 301d, and 301e, and the concave portion 302 shown in
[0065] When the regions of the SiO.sub.2 forming the through holes 301a, 301b, 301c, 301d, and 301e, and the concave portion 302 have been selectively removed, the resist pattern is removed. Next, a resist pattern which is only open at a region corresponding to the concave portion 302 and covers all other regions (including the regions corresponding to the through holes 301a, 301b, 301c, 301d, and 301e) is formed by photolithography.
[0066] At this time, a width L of the region corresponding to the concave portion 302 (see
[0067] For the dry etching, anisotropic etching by ICP-RIE (Inductively Coupled Plasma-Reactive Ion Etching) may be performed. In this case, fabrication precision in the depth direction is 0.03 μm or less, corresponding to one cycle of etching.
[0068] Then, the resist pattern is removed.
[0069] Next, a resist pattern that covers only the concave portion 302 is formed by photolithography. The resist pattern need only have a thickness of about 20 μm to be able to cover a level difference of the concave portion 302. By improving throwing power due to the viscosity of the resist, if at least the edges around the concave portion 302 can be covered, the resist pattern does not necessarily have to be formed at a film thickness corresponding to the depth of the concave portion 302. Further, there is no need for a very high positioning precision of the photolithography.
[0070] Using this resist pattern and the SiO.sub.2 layer as a mask, the Si layer of the substrate 104 exposed at the bottoms of the concave portions formed in the regions other than the concave portion 302, namely the regions forming the through holes 301a, 301b, 301c, 301d, and 301e is removed by dry etching (ICP-RIE) all the way to the backside, to form the respective through holes (S46).
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[0072] Once a wafer having the waveguide 101, the through holes 301a, 301b, 301c, 301d, 301e, and the concave portion 302 as shown in
[0073] Specifically, dicing is carried out using regions 311 and 312 with a width of about 70 μm shaded in
[0074] The above process is the wafer process for making the wafer having the waveguide 101, the through holes 301a, 301b, 301c, 301d, 301e, and the concave portion 302 as shown in
[0075] In
[0076] The connector 110 may be connected to the waveguide chip 100 in the following way, for example.
[0077] First, the fiber 120 is fixed in the groove 111 of the connector 110. Since the groove 111 is microfabricated at a high precision to fit the outer diameter of the fiber 120, the fiber 120 can be passively fixed in the connector 110. An adhesive or the like may be used to fix the fiber 120.
[0078] Then, the chip 100 and the connector 110 are brought close to each other on a flat plane S into a state where the concave-convex portions 102 and 112 fit into each other as shown in
[0079] In the order described above, the fiber 120 is first fixed in the connector 110, after which the connector 110 is fitted into the waveguide chip 100, and the end face of the fiber 120 is pressed against the end face of the waveguide 101, but it is also possible to use an order in which the waveguide chip 100 and the connector 110 are first fit together, after which the fiber 120 is pressed against the waveguide chip 100 and the connector 110 and fixed in place.
[0080] Further, in the above description of the present embodiment, the fiber 120 is installed in the connector 110 so that an end face of the fiber 120 is flush with the end face of the connector 110, as shown, for example, in
[0081] Further, while the present embodiment is intended for one fiber with one core 121, it goes without saying that it may also be applied to a multicore fiber having a plurality of cores, or a fiber array in which a plurality of fibers are arranged.
[0082] In addition, the length of the fiber to be fixed to the connector may be suitably set with consideration to mechanical strength and stability, an adhesive may be used to strengthen the fixation, and a coating material may be coated onto the fiber to prevent chemical deterioration of the fiber.
[0083] As described above, according to the present embodiment, the waveguide chip 100 and the connector 110 are formed from the same substrate using the same microfabrication process, which makes it possible to obtain a waveguide connection structure capable of realizing highly precise and passive alignment.
[Second Embodiment]
[0084] Next, a second embodiment of the present invention will be described with reference to
[0085]
[0086] As shown in
[0087] As such, in the first embodiment, as shown in
[0088] Because of this, the concave-convex portion 502 and the concave-convex portion 512 will be of a chamfered shape after dicing, as shown in
Third Embodiment
[0089] As shown in
[0090] By including such a locking mechanism, when the concave-convex portion 602 of the waveguide chip 600 and the concave-convex portion 612 of the connector 610 are fitted together, the concave portions 603 and the leaf springs 613 fit together, as shown in
[0091] Further, since the elasticity of the leaf spring 613 can be controlled by controlling the shape of the spring portion as seen in a top view and the thickness in the thickness direction of the substrate, the construction can be adapted to suit the application.
Fourth Embodiment
[0092] A fourth embodiment of the present invention will be described with reference to
[0093]
[0094] First,
[0095] At this time, electrical connection by bumps on the chip 100 side not shown here and land patterns on the substrate 702 side is carried out, and the distance between the chip 100 and the substrate 702 is adjusted. Although not shown here, other components such as chip capacitors and the like may be similarly arranged on the substrate 702 in the space near the chip 100. Further, the electrically connected portions of the end faces of the chip 100, except for the side surface which is to be connected to the connector 110, may be protectively coated with a resin or the like.
[0096] Next, as shown in
[0097] Next, as shown in
[0098] Next, as shown in
[0099] Then, as in
[0100] As described above, after surface mounting the waveguide chip 100, which is an opto-electrical component, on the printed circuit board 710, passive alignment can be done by simply inserting the connector 110.
[0101] When performing a conventional active alignment, after mounting the waveguide chip on the printed circuit board, there was a need to hold the fiber and bring it close to the chip near the printed circuit board surface to perform the alignment, but in addition to the need for equipment for holding and centering the fiber in order to do so, there was a problem in that electrical components could not be arranged near the chip on the printed circuit board. In addition, when performing active alignment before mounting on the printed circuit board, managing the excess length of the fiber was bothersome, and there was a problem in that the adhesive used in the connection between the fiber and the chip and the plastic of the commercial optical connector for the other end of the fiber could not withstand the reflow temperature (220° C. or higher) and deteriorated. Further, even when using a conventional commercial optical connector, it is not suited for direct application to a printed circuit board due to its large size and thickness.
[0102] By contrast, according to the present embodiment, the waveguide chip and the connector are separated, the connector can be made as small as the chip, and passive alignment is possible. Therefore, optical components such as a chip having a waveguide can be surface mounted by the same process as electrical components, after which the connector of the same small size as the chip may simply be inserted, achieving the superior effect of allowing for optical components to be easily mounted by the same process as electrical components.
REFERENCE SIGNS LIST
[0103] 1 Waveguide connection structure [0104] 100 Waveguide chip [0105] 101 Waveguide [0106] 102, 112 Concave-convex portion [0107] 110 Connector [0108] 120 Fiber [0109] 121 Core.