PSEUDO-RESISTANCE CALIBRATION CIRCUIT BASED ON SWITCHED CAPACITOR
20220206100 · 2022-06-30
Inventors
Cpc classification
H03F2203/45514
ELECTRICITY
International classification
Abstract
The present invention relates to an analog integrated circuit. Specifically, a pseudo resistor calibration circuit configured for precise adjustment of pseudo-resistor resistance on a circuit. A reference resistor is generated by the switched capacitor correction circuit, and its resistance value is only related to the capacitance value of the switched capacitor and the switching frequency. Using a parallel-to-series circuit design scheme and a voltage integrator to extract the control voltage to control the pseudo resistance, a pseudo resistance which is X*Y*Z times of the reference resistance can be obtained. The resistance of the pseudo-resistor is accurately adjustable so as to achieve good robustness to PVT fluctuations and improved linearity compared to traditional pseudo-resistors.
Claims
1. A pseudo resistor calibration circuit, comprising: a switched capacitor calibration loop that is configured to generate a reference resistor with a reference resistance relevant to a clock frequency, amplify the reference resistance by X*Y times, and output a relative voltage of metal-oxide-semiconductor (MOS) transistors, the switched capacitor calibration loop comprising: a pair of current mirrors with a current ratio of 1:X and is configured to reduce a current by X times; a switched capacitor consisting of two switches and a capacitor, the switched capacitor being configured to generate a reference resistor which is determined by the clock frequency and capacitance of the capacitor; and a feedback loop consisting of a first operational amplifier and Y MOS transistors that are connected in parallel, wherein the first operational amplifier is configured to ensure a same voltage at its positive and negative inputs by adjusting a gate voltage of the Y MOS transistors, wherein an equivalent resistance of the Y MOS transistors is X times of the reference resistance, and wherein the equivalent resistance of one of the Y MOS transistors is amplified by X*Y times; a voltage integrator configured to sample an output voltage of the first operational amplifier and a second operational amplifier, wherein an averaged output voltage is equivalent to the equivalent gate-source voltage of the Y MOS transistors in one working cycle; and a level shifter configured to sample the output voltage of the voltage integrator and transfer the sampled output voltage to a bootstrap capacitor of a calibrated pseudo resistor, wherein the bootstrap capacitor is configured to store a voltage to control a resistance value of the calibrated pseudo resistor, wherein the calibrated pseudo resistor is consisted of Z MOS transistors in series, a gate-source voltage of the Z MOS transistors being decided by the voltage stored on the bootstrap capacitor and equal to the equivalent gate-source voltage of Y MOS transistor in the calibration loop, and wherein a resistance value of the calibrated pseudo resistor is calibrated to X*Y*Z times of the reference resistor.
2. The pseudo resistor calibration circuit of claim 1, wherein the Y MOS transistors and Z MOS transistors have a same aspect ratio, the body of the Y MOS transistors and Z MOS transistors being connected to a source to reduce body effect.
3. The pseudo resistor calibration circuit of claim 1, wherein the two switches of the reference resistor are connected in series at a connection node, wherein one end of the capacitor of the reference resistor is connected to the connection node and the other end of the capacitor is connected to the ground, wherein one end of the two switches is connected to a port with X times current of the current mirror and the other end of the two switches is connected to a reference voltage.
4. The pseudo resistor calibration circuit of claim 1, wherein the two switches comprise CMOS switches consist of a NMOS transistor and a PMOS transistor.
5. The pseudo resistor calibration circuit of claim 1, wherein the CMOS switch comprises a non-overlapping clock generation circuit that is configured to generate two non-overlapping clock signals to control the NMOS transistor and the PMOS transistor respectively.
6. The pseudo resistor calibration circuit of claim 1, wherein the voltage integrator is composed of switched capacitor integrator.
7. The pseudo resistor calibration circuit of claim 6, wherein the switched capacitor integrator is composed of a sample capacitor and an integral capacitor, the sample capacitor being configured to sample the gate-source voltage for multiple times in one cycle and the averaged voltage of the integral capacitor.
8. The pseudo resistor calibration circuit of claim 7, wherein a relative value of the output voltage and the reference voltage is sampled by the sample capacitor of the level shifter.
9. The pseudo resistor calibration circuit of claim 6, wherein the switched capacitor integrator is configured to reset at an end of each working cycle and set the voltage on the integrating capacitor to zero.
10. The pseudo resistor calibration circuit of claim 1, further comprises a reference generation circuit that is configured to generate a reference voltage for the pseudo resistor calibration circuit.
11. The pseudo resistor calibration circuit of claim 1, further comprises a reference generation circuit that is configured to generate a reference current for the first operational amplifier.
12. The pseudo resistor calibration circuit of claim 1, wherein the first operational amplifier is configured as low mismatch to reduce offset.
13. The pseudo resistor calibration circuit of claim 1, further comprises a clock generation circuit that is configured to generate a clock for controlling the reference resistance.
14. The pseudo resistor calibration circuit of claim 1, further comprises a control logic circuit that is configured to generate signal to control the switches in the pseudo resistor calibration circuit according to the clock frequency.
15. The pseudo resistor calibration circuit of claim 14, wherein the generated control signals are non-overlapping.
16. The pseudo resistor calibration circuit of claim 1, wherein the bootstrap capacitor is shared by the Y MOS transistors connected in series.
17. The pseudo resistor calibration circuit of claim 1, wherein the MOS transistors have a same channel length and width, and wherein the current ratio depends on the number of MOS transistors connected in parallel.
18. The pseudo resistor calibration circuit of claim 1, wherein the pseudo resistor calibration circuit is configured to operate at four working states comprising: a first state to reset the voltage stored on the integrating capacitor to zero; a second state in which the sample capacitor is configured to sample the source-gate voltage of the Y MOS transistors in parallel in one working cycle; a third state in which the voltage integrator is configured to output the average voltage of source-gate voltage in one working cycle; and a fourth state in which the sample capacitor of the level shifter is configured to sample the relative value of output voltage and reference voltage and transfer the sample voltage to the bootstrap capacitor.
19. The pseudo resistor calibration circuit of claim 18, wherein the one working cycle refers to a period in which the capacitor of the switching capacitor is fully charged and discharged at one time.
20. The pseudo resistor calibration circuit according to claim 1, wherein the pseudo resistor calibration circuit is configured to works periodically to supplement the charge leakage on the bootstrap capacitor and compensate for the change of working temperature and the fluctuation of power supply voltage.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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[0024] With regard to the description of the drawings, the same or similar reference numerals may be used for the same or similar components.
DETAILED DESCRIPTION OF THE DISCLOSURE
[0025] The specific implementation of the present invention will be described in detail below with reference to the drawings and preferred embodiments.
[0026] As shown in
[0027] As shown in
[0028] In this example, the switched capacitor calibration loop 1 consists of a switched capacitor 11, a feedback loop 12 (consisting of an operational amplifier and Y parallel P-type metal oxide semiconductor field effect transistors), and a current mirror with X:1 (13) current ratio. The switched capacitor 11 is composed of two CMOS switches and a capacitor, the two CMOS switches being connected end to end and the intermediate node being connected to one end of the capacitor, and the other end of the capacitor being grounded. The other ports of the two switches are respectively connected to the port of the current mirror 13 through which X times of the current flows and a constant potential (V.sub.cm). The signal (ϕ.sub.2 and
[0029] In this example, the current mirror 13 is composed of two P-type transistors (M.sub.1, M.sub.2) with the same channel length and width ratio of X:1, wherein the gate of the P-type transistor (M.sub.1) with X times width is connected to the drain to form a diode connection. In addition, the generated voltage is used to control the gate voltage of the two P-type transistors (M.sub.1, M.sub.2) in the current mirror 13. The drain of the p-type transistor (M.sub.1) through which X times of the current in the current mirror 13 is connected to one end of the switched capacitor 11. Further the drain of p-type transistor (M.sub.2) through which 1 time of the current in the current mirror 13 is connected to the source of the Y parallel P-type transistors in the feedback loop 12, the body terminal of the Y parallel P-type transistors being connected to the source, and the drain being connected to a constant potential (V.sub.cm) at the same time, the other end of the switched capacitor 11 being also connected to the constant potential (V.sub.cm). The gate voltage of the Y P-type transistors (M.sub.p1˜M.sub.py) connected in parallel is controlled by the output voltage of the operational amplifier. The positive input port of the operational amplifier is connected to the drain of M1 in the current mirror. The negative input port of the operational amplifier is connected to the drain of M2 in the current mirror. Under the combined action of the current mirror 13 and the feedback loop 12, the current flowing through each of the Y parallel p-type transistors is one in X*Y times of the switching capacitor 11, and V.sub.1 is equal to V.sub.2. The resistance of each transistor in the parallel P-type transistor is X*Y times of the switching capacitor. The transistor operates in the sub threshold region, and its resistance value is only controlled by V.sub.gs voltage. The gate voltage of the transistor is determined by the output of the operational amplifier in the feedback loop 12.
[0030] In this example, the voltage integrator 2 is composed of a switched capacitor integrator, which integrates the gate-source voltages (V.sub.gs) of Y P-type transistors connected in parallel in a working cycle of the switched capacitor calibration loop, and outputs the average value of V.sub.gs in a working cycle. The switched capacitor integrator has three working states, which are reset, sampling, and integrating, these working states being controlled by ϕ.sub.3,
[0031] In this example, the level shifter 3 is composed of four switches (ϕ.sub.4 and
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[0034] As shown in
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[0036] As shown in
[0037] As shown in
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[0039] The invention generates a reference resistance through the switched capacitor calibration loop circuit 1. The reference resistance is composed of switching capacitor, and its resistance value is only related to the capacitance value of switching capacitor and switching frequency, but has nothing to do with the fluctuation of PVT. Using the circuit design scheme of parallel to series and the voltage integrator 2 to extract the control voltage to control the pseudo resistor 4, the pseudo resistor 4 with the resistance value of XYZ times the reference resistance can be obtained. The resistance value of the calibrated pseudo resistance 4 is tunable, the robustness to PVT fluctuation is stable, and the linearity is higher than that of the conventional pseudo resistance.
[0040] Although the specific embodiments of the invention have been described above, those skilled in the art should understand that these are only examples. A variety of changes or modifications can be made to these embodiments without departing from the and essence of the invention. In addition, the logic flows depicted in the figures do not require the particular order shown, or sequential order, to achieve desirable results. In addition, other steps may be provided, or steps may be eliminated, from the described flows, and other components may be added to, or removed from, the described systems. Accordingly, other implementations are within the scope of the following claims.