STRUCTURE AND CONFIGURATION OF THE PASSIVELY Q-SWITCHED DIODE END-PUMPED SOLID-STATE LASER
20220209491 · 2022-06-30
Assignee
Inventors
Cpc classification
H01S3/061
ELECTRICITY
H01S3/09415
ELECTRICITY
International classification
H01S3/11
ELECTRICITY
Abstract
The passively q-switched diode end-pumped solid-state laser is used the gain medium made of Er:Yb doped crystal and the Q-switch made of Co.sup.2+:MgAl.sub.2O.sub.4 crystal. The optical elements are optimally designed for the resonator to achieve pulse energy in a range 0.5 mJ<E<2mJ with the pulse width in a range of 4 ns-15 ns. The resonator is appropriate to use in laser rangefinders, target designator, and other products in military and civilian applications.
Claims
1. A configuration of a passively q-switched diode end-pumped solid-state laser, comprising: a laser base attaching optical elements along an optical axis of a diode laser source to form a laser transmitter; The diode laser source is a pulsed laser source with a center wavelength in a range of 900 nm-1000 nm, which can generate pulsed laser with a peak power in a range of 20 W-120 W, a pulse width in a range of 2 ms-5 ms, and a pulse repetition frequency in a range of 1 Hz-10 Hz; coupling lenses which are responsible for guiding the pulsed laser from the diode laser source into a gain medium in the resonator cavity, a position of the coupling lenses varied axially to control a diameter of a pump laser beam entering the gain medium in a range of 0 5 mm-1 mm; an input coupler which is anti-reflective coating for the diode laser beam and highly reflective coating for the radiations, which possess a desired laser wavelength, emitted in the resonator cavity, wherein the input coupler comprises an individual coupler or a coating directly on an end-side of the gain medium; an intracavity holder attaching the gain medium and a Q-switch, wherein the intracavity holder is precisely mounted on the laser base, the Q-switch is placed perpendicularly or at a Brewster's angle to an optical line, wherein this element is placed separately or coated directly on a right side of the gain medium, the optical line is defined as a line perpendicular to the input coupler and output coupler which simultaneously is a symmetry axis of the gain medium; the gain medium is made of glass doped with ions Er.sup.3+ and Yb.sup.3+, wherein the laser with the desired wavelength will be emitted under the excitation of a pump diode laser source, the passive Q-switch is made of Co.sup.+:MgAl.sub.2O.sub.4 crystal as a laser on/off switch and is placed perpendicularly or at Brewster's angle to the laser in the resonator cavity, the output coupler is coated to allow the laser to transmit partially, a part of the laser is reflected into the resonator cavity while a remaining part of the laser exits from the resonator cavity with a desired pulse energy.
2. The configuration of claim 1, wherein the resonator cavity uses a gain medium made of Er:Yb doped glass with an Er concentration in a range of 0.3×10.sup.20 to 0.5×10.sup.20 cm.sup.−3, Yb concentration in a range of 1.7×10.sup.21 to 2×10.sup.21 cm.sup.−3, gain medium radius 0.5 mm<R.sub.Er:Yb<1, mm and gain medium length 5 mm<L.sub.Er:Yb<8 mm.
3. The configuration of claim 1, wherein the end-pumped laser transmitter has a mechanical length between two couplers (input and output couplers) 15 mm<L.sub.KÐ<30 mm.
4. The configuration of claim 1, wherein the Q-switch is made of Co.sup.+:MgAl.sub.2O.sub.4 crystal with initial transmittance 85%<T.sub.0<92% and reflectivity of output coupler <85% at wavelength 1525 nm-1570 nm.
5. The configuration of claim 1, with coupling lenses that can adjust positions of individual lens to change a diameter or cross-section dimensions of pump beam from laser diode source in the range: 0.5 mm<D.sub.B, a, b<1 mm
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0013]
[0014]
[0015]
[0016]
[0017]
DETAILED DESCRIPTION OF THE DISCLOSURE
[0018]
[0019] The laser base (1) made of copper (Cu) is precisely machined, the mounting position between the input coupler and output coupler can be varied in a range of 15 mm-30 mm to ensure the output laser pulse width is in a range of 4 ns-15 ns.
[0020] The diode laser source (2) is mounted on the laser base (1). The center wavelength of the diode laser is in a range of 900 nm-1000 nm to match the absorption spectrum diagram of the gain medium made of Er: Yb doped glass as shown in
[0021] The coupling lenses consists of spherical and cylindrical lenses (
[0022] Gain medium (6) is made of Er: Yb doped glass which is doped from 0.3×10.sup.20 to 0.5×10.sup.20 cm.sup.−3 Er.sup.3+ ions and from 1.7×10.sup.21 to 2×10.sup.21 cm.sup.−3 Yb.sup.3+ ions. Yb.sup.3+ ion concentration in the above range are used to optimize the energy transfer efficiency from Yb.sup.3+ ions to Er.sup.3+ ions during pumping. Er.sup.3+ ion concentration from 0.3×10.sup.20 to 0.5×10.sup.20 cm.sup.−3 is used to obtain the maximum value of gain in the cavity and reduce the reabsorbing photon emitted in cavity.
[0023] The gain medium length is optimally calculated for the resonator cavity operating in free-run mode:
[0024] where N.sub.Yb and N.sub.Er respectively are population density of Yb.sup.3+ at energy level .sup.2F.sub.5/2 and Er.sup.3+ at energy level .sup.4I.sub.13/2; N.sup.0.sub.Er is doping concentration of Er.sup.3+ ions; τ.sub.Er and τ.sub.Yb are the lifetime of Er.sup.3+ and Yb.sup.3+ ions at energy level mention above, respectively; W.sub.p (x, y, z, t) is the rate of laser pump source; α.sub.ET is energy transfer coefficient between Yb.sup.3+ and Er.sup.3+. Gain g(x, y, z, t) in gain medium with the length of z can be expressed by:
g(x,y,z,t)=∫.sub.0 .sup.zk.sub.g(x,y,z′,t)dz′ (3)
k.sub.g=N.sub.Erδ.sub.SE.sup.L−(N.sub.Er.sup.0−N.sub.Er)δ.sub.abs.sup.L (4)
where δ.sub.SE.sup.L and δ.sub.abs.sup.L are emission and absorption cross-section of Er.sup.3+ at laser wavelength ν.sub.L.
[0025] Input coupler (4) is coated with the anti-reflective layer for the wavelength between 900 nm and 1000 nm to transmit >98% and highly reflective for the wavelength between 1525 nm and 1570 nm to reflect >98%. This element can be an individual mirror or a coating layer on the end-side of the gain medium (6).
[0026] Passive Q-switch (7) is a saturable absorber made of Co.sup.+:MgAl.sub.2O.sub.4 crystal with initial transmittance (T.sub.0) in the range 85%<T.sub.0<92%, which ensures laser pulse energy >0.5 mJ.
[0027] Intracavity holder (5) attaches gain medium (6) and Q-switch (7). Q-switch (7) is placed perpendicularly or at Brewster's angle to the optical line. This element can be placed separately or bonded directly on the right side of the gain medium (6). The optical line is defined as the line perpendicular to the input (4) and the output coupler (8) which simultaneously is the symmetry axis of the gain medium (6). The intracavity holder (5) is precisely mounted on the laser base (1).
[0028] Output coupler (8) is coated to allow the radiation to reflect <85% with the wavelength between 1525 nm and 1570 nm, hence, the intracavity fluence in the cavity is <10 J/cm.sup.2 (damage threshold of the optical elements used). The intracavity fluence (F.sub.in) is expressed by:
where T.sub.OC is the transmittance of output coupler, E is pulse energy output from the laser system.
[0029] Although the structure of the resonator cavity in the present invention has been illustrated in the accompanying Drawings and described in the foregoing Detailed Description, it should be noted that the invention is not limited to the described resonator cavity, but is capable of different rearrangements, modifications or substitutions without departing from the invention as set forth and defined by the following claims.