Abstract
A radio frequency micro-electromechanical switch (generally referred to using the acronyms RF MEMS) is described. Also described is a method of producing such an RF MEMS switch.
Claims
1.-10. (canceled)
11. A method for manufacturing a switch comprising the following steps: a) depositing, on a planar face of at least one of a semiconductor and an insulating substrate, a first sacrificial layer and producing a pattern by at least one of life-off and etching of a portion of the first sacrificial layer; b) depositing, on the first sacrificial layer and on the planar face of the substrate (21), at least a first layer of metal; then producing a pattern by at least one of lift-off and etching a portion of the first layer of metal, to form a first RF line and the a first MEMS membrane; c) depositing, on the first RF line, a second sacrificial layer; then producing a pattern by at least one of lift-off and etching a part of the second sacrificial layer; d) depositing, on the second sacrificial layer, a dielectric layer; then producing a pattern by at least one of lift-off and etching a portion of the dielectric layer, to form the dome having an inner face across from the planar face of the substrate, an outer face opposite the inner face, as well as at least one openings in the dome; e) eliminating the first and second sacrificial layers through the at least one opening; then f) depositing, on the outer face of the dome and on the planar face of the substrate, at least one second metal layer; then producing a pattern making it possible to plug the at least one opening, and forming a second RF line by at least one of lift-off and etching of a portion of the second metal layer.
12. A method for manufacturing a switch comprising: a) depositing, on a planar face of a substrate, a first sacrificial layer and producing a first pattern by at least one of lift-off and etching of a portion of the first sacrificial layer; b) depositing, on the first sacrificial layer and on the planar face, at least a first layer of metal; then producing a second pattern by at least one of lift-off and etching a portion of the first layer of metal to form a first RF line and a first MEMS membrane; c) depositing, on the first RF line, a second sacrificial layer; then producing a third pattern by at least one of lift-off and etching a part of the second sacrificial layer; d) depositing, on the second sacrificial layer, a dielectric layer; then producing a fourth pattern by at least one of lift-off and etching a portion of the dielectric layer, to form the dome having an inner face across from the planar face, an outer face opposite the inner face, as well as at least one opening in the dome; e) eliminating the first and second sacrificial layers through the at least one opening in the dome; then f) depositing, on the outer face of the dome and on the planar face, at least one second metal layer; then producing a fifth pattern to plug the at least one opening and forming a second RF line by at least one of lift-off and etching of a portion of the second metal layer.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0048] Other advantages and specificities of the present invention will emerge from the following description, provided as a non-limiting example and done in reference to the appended figures: [0049] FIGS. 1a, 1b, and 1c show a diagram of a switch according to the invention in top view (FIG. 1a), in sectional view along line AA' (FIG. 1b) and in sectional view along line BB' (FIG. 1c); [0050] FIG. 2 shows a schematic sectional view along line AA' of a switch according to the invention in the case where it is used as capacitance and where the second RF line is inserted partially into the dielectric layer of the dome; [0051] FIG. 3 shows a schematic sectional view along line AA' of a switch according to the invention in the case where it is used as capacitance and having two activation electrodes arranged on the dome and a metal layer arranged in the dielectric layer of the dome; [0052] FIGS. 4a and 4b show a diagram of a switch according to the invention in the case where it is used as ohmic contactor and has upper and central electrodes connected to one another, with a sectional view along line AA' (FIG. 4a) and a sectional view along line BB' (FIG. 4b); [0053] FIG. 5 shows a schematic sectional view along line AA' of a switch according to the invention in the case where it is used as capacitive contact and has upper electrodes and a stop pin; [0054] FIG. 6 shows a schematic sectional view along line AA' of a switch according to the invention in the case where it is used as ohmic switch and has central and lower electrodes and a stop pin; [0055] FIGS. 7a and 7b show schematic views of different successive steps a) to g) of an embodiment of a switch according to the invention, with a sectional view along line AA' (FIG. 7a) and a sectional view along line BB' (FIG. 7b).
DETAILED DESCRIPTION OF THE INVENTION
[0056] FIGS. 1a-c show a diagram of a switch according to the invention in top view. The first RF line 3 is electrically connected to the MEMS membrane 5 by anchors 51, thus allowing an RF signal passing through the MEMS membrane 5 to propagate in the first RF line 3. The second RF line 4 has a first section 41 in contact with the face 21 of the substrate 2 and a second section 42 partially covering the dome 6. These two sections are electrically connected to one another, thus allowing an RF signal passing through the first section 41 to propagate in the second section 42 (FIG. 1a).
[0057] The stack comprising the MEMS membrane 5, the dielectric (comprising the dielectric layer of the dome as well as any layer of air between the membrane 5 and the dielectric layer of the dome if the membrane 5 is not completely deflected), and the second section 42 of the second RF line 4 forms the capacitance. The signal propagates from one RF line to the other through this stack. When the membrane 5 is deflected toward the RF line 4 and comes into contact with the dielectric dome, the capacitance is higher. The switch according to the invention can therefore be used as switched capacitance. In this particular case, the activation of the membrane is done by the RF line.
[0058] The dome 6 of FIGS. 1a and 1b comprises at least one dielectric layer and is covered by a layer of metal that can be discontinuous, the component patterns of which are connected to the first RF line 3 (FIG. 1b). The component metal of the RF lines 3 and 4 makes it possible to guarantee the hermiticity of the cavity.
[0059] The dome 6 has several anchor points 63 on the planar face 21 of the substrate 2 and three openings 64, 65 able to allow the elimination of sacrificial layers S1, S2 having been used to develop the MEMS membrane 5 and the dome 6 (cf. description of FIGS. 7a and 7b below): two openings 64 closed by the first RF line 3 (visible in FIGS. 1a and 1b) and an opening 65 closed by the second RF line 4 (visible in FIGS. 1a and 1c). As shown in FIG. 1b (for the opening 64) and FIG. 1c (for the opening 65), these openings are lateral openings, which are not across from the upper face 51 of the MEMS membrane 5.
[0060] FIG. 2 shows a schematic sectional view of a switch according to the invention in the case where it is used as capacitance and where the second RF line 4 is inserted partially into the dielectric layer of the dome 6. In this particular case, the second section 42 of the second RF line 4 is still separated from the MEMS membrane by at least one dielectric layer 8. The more deeply the RF line is inserted into the dome 6, the higher the maximum capacitance is, obtained when the MEMS membrane 5 comes into contact with the dome 6.
[0061] FIG. 3 shows a schematic sectional view of a switch according to the invention in the case where it is used as capacitance and where a metal layer 8 is arranged below the dielectric layer. The advantage of this method is allowing nearly perfect reproducibility of the switched capacitance subject to a slight degradation of the quality factor.
[0062] FIGS. 4a and 4b show a schematic sectional view of a switch according to the invention in the case where it is used as ohmic contact and has upper 71 and central 72 electrodes. In this particular case, each of the upper activation electrodes 71 is connected to a central electrode 72 by a metal via 75 passing through the dome 6 (FIG. 4a). The activation electrodes are essential in the case of the ohmic contact, the activation of the membrane not being able to be done via the RF lines that come into contact.
[0063] The ohmic contact of FIG. 4 is done via a metal contact pin 91 passing through the dome and being in contact with the second RF line 4. When the membrane is deflected, it comes back into contact with said metal pin and allows the RF currents to pass between the two RF lines (RF lines 3 and 4).
[0064] FIG. 5 shows a schematic sectional view of a switch according to the invention in the case where it is used as variable capacitance and where it has lower electrodes 73 and a stop pin 9. This pin here may either be placed below the MEMS membrane 5 and in contact with said membrane or on the face 21 of the substrate 2 and in contact with said face. When the membrane is deflected toward the lower electrodes 73, the pin limits the deflection of the MEMS membrane 5 toward the lower electrodes 73, leaving an air gap between the MEMS membrane 5 and the lower electrodes 73. Without said pin, the lower electrodes 73 could come into contact with the membrane, which would charge the membrane 5 and cause the device to fail.
[0065] FIG. 6 shows a schematic sectional view along line AA' of a switch according to the invention in the case where it is used as ohmic contact and has central 72 and lower 73 electrodes. The activation electrodes 71, 73 cannot deflect the membrane 5 toward them. Thus, adding lower electrodes 73 makes it possible to deflect the membrane 5 toward the substrate 2 and increase the amplitude of the variations in electric properties of the device.
[0066] FIGS. 7a and 7b show schematic views of the different successive steps a) to g) to produce a switch according to the invention, with a sectional view along line AA' (FIG. 7a) and a sectional view along line BB' (FIG. 7b).
[0067] In FIGS. 7a and 7b, the diagrams corresponding to step (a) show a first sacrificial layer S1 deposited on the substrate 2 after shaping thereof.
[0068] In FIGS. 7a and 7b, the diagrams corresponding to step (b) show a first metal layer M1 deposited on the first sacrificial layer S1. This first metal layer M1 is shaped by etching (dry or wet) to create the first RF line 3 and the MEMS membrane 5, these two components being electrically connected to one another by the anchors 51 of the MEMS membrane.
[0069] In FIGS. 7a and 7b, the diagrams corresponding to step (c) show the second sacrificial layer S2 after shaping thereof.
[0070] In FIGS. 7a and 7b, the diagrams corresponding to step (d) show the dielectric layer after shaping thereof to create the dome 6. The dome 6 is anchored in the substrate 2 and allows the first RF line 3 to pass in order to allow the connection with the MEMS membrane 5.
[0071] The openings 64, 65 allow the dry etching or wet etching of the sacrificial layers, wet etching requiring an additional step for critical point dryer.
[0072] In FIGS. 7a and 7b, the diagrams corresponding to step (e) show the result of the step for eliminating the sacrificial layers. In FIGS. 7a and 7b, the diagrams corresponding to step (f) show that step f) is a step for depositing a second metal layer M2, said layer being intended to serve as a base for forming the different patterns of the following step.
[0073] As illustrated in the diagrams corresponding to step (g) of FIGS. 7a and 7b, said second metal layer M2 is shaped by lift-off and/or etching (dry or wet) in order to create the second RF line 4 and to close the openings 64, 65 formed during the preceding step, in a manner. This second RF line 4 is broken down into a first section 41 in contact with the planar face 21 of the substrate 2, and a second section 42 adjacent to the first section 41 (i.e., that is electrically connected to it). At least one of said second RF line 4 and said first RF line 3 closes the lateral openings 64, 65, thus creating a hermetic cavity C that encapsulates the MEMS membrane.
