PROMOTING ADHESION OF THIN FILMS

Abstract

The invention relates to a method for adhesion of a thin film or functional layer to a substrate by applying a pulsed and/or alternating voltage.

Claims

1. A process for improving the adhesion of a layer on a substrate, comprising: depositing a functional or decorative layer on the substrate; applying an electrode above the layer; heating to a determined adhesion temperature; applying an electric voltage between the substrate and the electrode; removing the electrode.

2. The process according to claim 1, wherein an interface between the substrate and the layer has a chemical gradient and/or an oxidation gradient.

3. The process according to claim 1, wherein said electric voltage comprises a pulsed or AC component and a DC component.

4. The process according to claim 1, wherein said adhesion temperature is below 300° C., preferably below 200° C.

5. The process according to claim 4, wherein said pulsed or AC component has a frequency higher than 50 Hz, preferably higher than 100 Hz.

6. The process according to claim 1, wherein said substrate is metallic, for example a substrate made of steel, stainless steel, titanium, platinum or ceramic, for example corundum, zirconium, and the thin layer is a layer of PVD, ALD, sol-gel, or galvanic type.

7. The process according to claim 1, comprising a step of functionalization by a reactive plasma, for example an oxygen plasma.

8. The process according to claim 1, wherein the layer is: a bio-ceramic layer, for example a hydroxyapatite layer, on an implantable device; or an anti-wear layer, for example a TiN or DLC layer, on a cutting tool; or an antireflective layer on a windowpane, an optical glass, or an optical element; or an element of a photovoltaic device; or an element of a display device.

Description

BRIEF DESCRIPTION OF THE FIGURES

[0017] Examples of implementation of the invention are indicated in the description shown by the appended figures in which:

[0018] FIG. 1 shows schematically a bonding device which makes it possible to implement the process of the invention.

[0019] FIG. 2 shows steps of the inventive process.

EXAMPLE(S) OF AN EMBODIMENT OF THE INVENTION

[0020] In one embodiment that will subsequently be described in detail, the process of the invention is applied to the adhesion of a thin layer 23 on a substrate 20. The layer 23 could for example be an anti-wear layer made of TiN on a cutting tool, or a colored layer, or a bio-ceramic layer, that is to say a ceramic having a composition similar to that of an organic tissue, on a dental implant, or any other functional or decorative layer.

[0021] The layer 23 can be applied by any chemical or physical process, for example by physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PE-CVD), atomic layer deposition (ALD), plasma torch, electrospinning, spraying, various galvanic processes, sol-gel processes, and many others. The layer 23 may be insulating, semi-conductive, or conductive, crystalline (monocrystalline, polycrystalline or, for polymers, semi-crystalline), or amorphous.

[0022] The invention can be applied to the bonding together of a variety of objects or components. The description will be understood more clearly with reference to FIG. 1 which represents, in section, an anodic bonding device.

[0023] The part 20 is intended to receive the functional or decorative layer 23. The substrate 20 can be produced with all the materials normally used. Mention may be made, for example, of:

[0024] a) stainless steel,

[0025] b) gold, or gold-based alloys,

[0026] c) platinum,

[0027] d) titanium,

[0028] e) aluminum,

[0029] f) ceramic,

[0030] g) glass,

[0031] h) polymer,

[0032] i) composite materials,

this list is not exhaustive.

[0033] The part 20 can be produced by any known process, for example by machining, stamping, 3D printing, or any other process. It is not important for the face intended to receive the layer 23 to be perfectly flat, since the layer is deposited by a process which will allow it to perfectly follow the shape of the substrate in intimate contact.

[0034] It has been found that the process of the invention does not require a homogeneous chemical composition of the layer 23. Quite the opposite, layers having a chemical and/or oxidation gradient have given better results in terms of adhesion, solidity of the bond and rapidity of bonding together. In a typical case involving a titanium layer, the layer 23 has a thickness ranging from 1 nm to 10 μm and its composition varies from pure titanium, in the deepest regions, to the oxide TiO.sub.2 at the surface, while passing through all the intermediate stoichiometries. As will subsequently be seen, this chemical gradient can be accentuated with exposures to a reactive plasma.

[0035] Several materials lend themselves to the deposition of the layer 23. Titanium layers, as mentioned above, have given excellent results, but the invention can be replicated with other materials, for example Zr, Hf, Fe, Si, Al, among others. The chemical gradient can be obtained by oxidation, nitridation or carburization, for example, in which case the composition of the layer may be of Ti.sub.xO.sub.y, Si.sub.xO.sub.y, Si.sub.xN.sub.y, Al.sub.xO.sub.y, or Zn.sub.xO.sub.y type. The layer 23 can be enriched with mobile atoms/ions, such as Li, Na, K, Ca or Be, or halogens. It is possible to make layers of bio-ceramic, for example of hydroxyapatite, the main mineral component of dental enamel, of dentine and of bone, adhere on the substrate 20.

[0036] The invention is also not limited to metallic or conductive substrates, but it has been successfully applied also to semi-conductive elements, such as elements of photovoltaic panels, or to insulating substrates such as glass or corundum. It is for example possible to make antireflective, polarizing layers, or transparent conductive layers adhere to a transparent element, for example ITO electrodes on a touch screen or on an LCD screen.

[0037] FIG. 1a represents very schematically a bonding device which makes it possible to carry out the inventive process. The substrate 20 bears a layer 23 on one face, and the electrode 10 is positioned on the layer 23 in a chamber 40. Heating means 45 make it possible to maintain the parts at a desired temperature. Characteristically, the invention is carried out at temperatures below those of conventional anodic bonding processes. The temperature is preferably below 250° C. Very satisfactory results have been obtained at temperatures of 200° C., 150° C., 100° C., and even 75° C. Under no circumstances will the temperature be close to that of the melting point or the glass transition temperature of the materials used.

[0038] The electrode 10 is connected to a circuit 31 and the substrate is connected to a counter electrode 32, between which is connected a voltage source 30. The voltage source produces an electric field which causes migration of ions between the elements 20, 23, 10.

[0039] The voltage generated by the source 30 comprises a direct component (its average value) within the limits of what is generally used in anodic bonding processes, i.e. in the range 0.1-50 kV or more, depending on the thickness of the parts to be joined and the dielectric rigidity of the assembly. It has been found that the quality of the adhesion improves considerably when an AC or pulsed component is superimposed on the direct component. The amplitude of the AC component or the height of the pulses will be comparable to that of the direct component, and the characteristic frequency will be higher than 100 Hz, for example 1 kHz, 10 kHz, or more. Characteristically, the frequency of the AC component or of the pulses will be higher than the dielectric relaxation frequencies of the materials used.

[0040] If required, the parts 20,10 can be mechanically compressed. However, it has been found that such pressing is often superfluous. The assembly rates are of the order of a few minutes.

[0041] Between the layer 23 and the substrate 20, it is possible to deposit thin layers with an esthetic or antireflective function (if the substrate 20 is transparent, for example), or in order to improve the adhesion, or for any other purpose. These additional layers are not represented in the figures. The transition between the materials of the layers may be discontinuous or gradual.

[0042] Any charged particle placed under the influence of a uniform electric field moves at a speed proportionally to this field, the proportionality factor being referred to as the electric mobility of the particle. This migration will take place from the anode to the cathode for positively charged particles, and in the opposite direction for negatively charged particles. Under the effect of the ion migration, a difference in potential is observed between the partners, which causes the partners to press together by electrostatic attraction. The disruption of the thermodynamic equilibrium influences the populations of charge carriers located within the parts to be bonded together and the intermediate layer. The disruptions may be caused by: [0043] nonuniformities in terms of doping, of impurities, of structural defects and local deformations (mainly in the region of the surface), contacts and junctions [0044] the electric field forces [0045] the temperature gradients.

[0046] When the electric field and also the temperature are interrupted, the charge carriers tend toward a state of equilibrium corresponding to permanent regimes defined by initial conditions and at the edges, according to typical mechanisms: [0047] diffusion of the carriers in concentration gradients movement of the carriers in internal electric fields [0048] generation and recombination of carriers which may be intrinsic or may involve recombination centers and traps.

[0049] The properties relating to electrical currents and to movements of charge carriers under the influence of applied forces are called transport phenomena. Among transport phenomena, mobility, whether it is for example voids, impurities, charge carriers (the materials are differentiated by the Debye length of the major carriers and their behavior is in particular described by the continuity equation), and also diffusion (based on Fick's laws) are key mechanisms of anodic bonding.

[0050] The parameters which have the most influence on the mobility of the charge carriers are the temperature, the nature of the network and the number by volume of impurities. Among the defects, a distinction may be made between impurities and voids. It is these same voids, Schottky defects or Frenkel defects, inter alia, which facilitate the diffusion of the charge carriers and define the energy required for their diffusion. Furthermore, moving a void through a crystal demands much less work than forcing an ion to move through a dense ion network of a crystal. Ionic conduction depends on the movement of the voids. The impurities which contribute to the density of charge carriers are called “donors” if they provide additional electrons and “acceptors” if they provide additional holes. It should be noted that the speed of the anodic bonding phenomenon depends on the number of defects and on the temperature in particular.

[0051] The choice of the intermediate layer(s) depends greatly on the “properties” of the charge carriers. The chemical composition of the layer(s) is naturally important since the transport phenomena depend on the characteristics of the atomic bonds. The bonds created during the anodic bonding process are mainly covalent-type bonds. These strong bonds are established by the coming together of a pair of electrons from each of the charge carriers.

[0052] Other parameters are of importance, such as the thickness of the parts to be bonded together as well as the thickness of the depletion zone.

[0053] FIG. 2 represents schematically a succession of steps of the inventive process. The part 20, secondarily machined acid/or polished is first cleaned (step a) by leaching baths, or by ultrasound, or by any appropriate washing process 50. Next (step b), a functional or decorative layer is created by PVD deposition 55, as was discussed above, or by any other suitable process. Step c) represents the element 20 with the activated intermediate layer 23.

[0054] The surface(s) to be joined are preferably activated by reactive plasma bombardment (not represented). The chemical and physical characteristics of the plasma will be selected as a function of the desired chemistry for the intermediate layer. Oxygen plasmas applied to layers of titanium or of steel have given very satisfactory bonding together in terms of solidity and rapidity. The activation takes place, preferably, in the same reactor in which the deposition 55 is carried out.

[0055] The activated surfaces are sensitive to air, so for this reason it is preferable to complete the bonding together rapidly after step d). The elements 23 and 20 are brought into contact and heated (step e), then the electric field is applied by the electrodes 10, 31, 32 (step f) for a determined time, until the anodic bond is obtained. Finally, the electrode 10 is removed.

[0056] In one variant of the invention, the electrode 10 is a strip of an insulating material, for example an electrode made of ceramic, of glass, or of a crystalline material, optionally with an equipotential conductive layer on the back.

[0057] The process of the invention can be carried out with the electrode 10 in contact with the layer 23, optionally with a greater or lesser bearing force. Such pressing together is not however essential; good results (considerable improvement in adhesion between substrate 20 and thin layer 23) have been obtained even when the electrode 10 and the layer 23 remain separated by an empty space 12 during the application of the electric field. The empty space 12 can range from 0 to 20 mm or more.

EXAMPLE

[0058] The beneficial effects of the process of the invention were verified on a sample composed of a metal strip (for example made of steel) on which a layer of Ti/TiN was deposited by PVD. The adhesion of the layer is compared between two identical samples, one of which underwent the process for improving adhesion by pulsed current of the invention. The samples are folded through an angle of 170° to place the thin layer under tension.

[0059] The following are observed on the control sample: [0060] Axial tearing of the layer according to the curvature of our part. [0061] “Bursting” of the layer at certain points where the tensile force is greatest, especially at the ridges of the part.

[0062] The following are observed on the sample treated according to the invention: [0063] An identical structure before bending, with no apparent modification after the bending test. [0064] No bursting of the layer.

REFERNCE NUMBERS USED IN THE FIGURES

[0065] 10 electrode [0066] 12 space [0067] 20 substrate [0068] 23 functional or decorative layer [0069] 30 voltage source [0070] 31 electrode [0071] 32 counter electrode [0072] 40 chamber [0073] 45 thermal and/or electromagnetic energy [0074] 50 washing [0075] 55 deposition [0076] 65 surface activation