IMPROVED HIGH-TEMPERATURE CHIP
20220196486 · 2022-06-23
Assignee
Inventors
Cpc classification
H01C1/012
ELECTRICITY
G01K7/18
PHYSICS
H01C1/028
ELECTRICITY
International classification
Abstract
One aspect relates to a high-temperature sensor, having a coated substrate. The substrate contains a zirconium oxide or a zirconium oxide ceramic, at least one resistance structure and at least two connection contacts. The connection contacts electrically contact the resistance structure. The substrate is coated with an insulation layer. The insulation layer contains a metal oxide layer, the resistance structure and the free regions of the insulation layer, on which no resistance structure is arranged, are coated at least in regions with a ceramic intermediate layer, and a protective layer and/or a cover is arranged on the ceramic intermediate layer. At least one opening is formed in the insulation layer, which exposes at least sections of a surface of the substrate.
Claims
1-12. (canceled)
13. A high-temperature sensor comprising: a coated substrate, wherein the substrate contains a zirconium oxide or a zirconium oxide ceramic; at least one resistance structure; and at least two terminal contacts; wherein the terminal contacts make electrical contact with the resistance structure; wherein the substrate is coated with an insulation layer; wherein the insulation layer contains a metal oxide layer, the resistance structure and the exposed areas of the insulation layer, on which no resistance structure is arranged, are at least partially coated with a ceramic intermediate layer, and a protective layer or a cover is arranged on the ceramic intermediate layer; and wherein at least one opening is formed in the insulation layer, which opening exposes a surface of the substrate at least in sections.
14. The temperature sensor according to claim 13, wherein the at least one opening is designed in the shape of slots, wherein the width of the slots is between 5 μm and 1 mm.
15. The temperature sensor according to claim 13, wherein the at least one opening is designed in the shape of slots, wherein the width of the slots is between 20 μm and 100 μm.
16. The temperature sensor according to claim 14, wherein the slots of the at least one opening have longitudinal extensions formed parallel or perpendicular to a longitudinal extension of the substrate, or wherein the slots of the at least one opening have longitudinal extensions formed parallel to one another.
17. The temperature sensor according to claim 13, wherein the at least one opening exposes at least one side surface of the substrate.
18. The temperature sensor according to claim 13, wherein the at least one opening completely surrounds the resistance structure.
19. The temperature sensor according to claim 13, wherein the at least one opening partially frames at least one of the two terminal contacts of the resistance structure.
20. The temperature sensor according to claim 13, wherein the at least one opening is filled with a material of the protective layer.
21. The temperature sensor according to claim 13, wherein the zirconium oxide or the zirconium oxide in the zirconium oxide ceramic is stabilized with oxides of a trivalent and a pentavalent metal, or at least one electrode is arranged on at least one terminal contact next to the resistance structure on the insulation layer, wherein the electrode or electrodes are formed as one piece with the resistance structure.
22. The temperature sensor according to claim 13, wherein the insulation layer is an aluminum oxide layer.
23. The temperature sensor according to claim 13, wherein the ceramic intermediate layer has a thickness between 1 μm and 50 μm.
24. The temperature sensor according to claim 13, wherein the ceramic intermediate layer has a thickness between 4 μm and 10 μm.
25. The temperature sensor according to claim 13, wherein the protective layer includes a glass or a glass ceramic or the cover is a ceramic plate.
26. The temperature sensor according to claim 13, wherein the resistance structure includes a platinum material or a platinum alloy, or a platinum-based alloy.
Description
[0041] Further features and advantages of the invention emerge from the following description, in which preferred embodiments of the invention are explained with reference to schematic drawings.
[0042] The drawings show the following:
[0043]
[0044]
[0045]
[0046]
[0047]
[0048] A substrate 16 made of a stabilized zirconium oxide or a zirconium oxide ceramic is coated with an insulation layer 17 made of metal oxide, which ensures that the resistance structure 11 is not short-circuited by the zirconium oxide, which is conductive at high temperatures, and that any harmful interaction between the zirconium oxide and the resistance structure 11 is prevented.
[0049] On its side facing away from the substrate 16, the resistance structure 11 is provided with an intermediate layer 18 as a diffusion barrier, which in turn is provided with a protective layer 19 for passivation, which can consist of glass or a glass ceramic and is covered with a cover 20.
[0050] According to
[0051] In the temperature sensor shown in
[0052] In addition to the initially mentioned embodiment of the intermediate layer 18 as a diffusion barrier, it should be noted that this is applied either in the thin-film process with a thickness in the range from 0.2 to 10 μm, preferably 5 μm, or in the thick-film process with a thickness in the range from 5 to 50 μm, preferably 15 μm.
[0053] The thickness of the connection pads 23, 24 on the resistance structure 11 is in the range from 10 to 50 μm, preferably 20 μm. As a carrier, the substrate 16 has a thickness in the range from 0.1 mm to 1 mm, preferably 0.4 mm, particularly preferably 0.38 mm.
[0054] The terminal contacts 12, 13 are both arranged on one side. In addition, however, it is also possible to arrange both terminal contacts 12, 13 on opposite sides.
[0055]
[0056]
[0057] In the embodiment shown in
[0058] In the embodiment shown in
[0059]
[0060]
[0061] The features of the invention disclosed in the preceding description and in the claims, figures, and exemplary embodiments can be essential both individually and in any combination for the implementation of the invention in its various embodiments.
LIST OF REFERENCE NUMERALS
[0062] 11 Resistance structure [0063] 12, 13 Terminal contact [0064] 14, 15 Electrode [0065] 16 Substrate [0066] 17 Insulation layer [0067] 18 Intermediate layer [0068] 19 Protective layer [0069] 20 Cover [0070] 21, 22 Connecting wire [0071] 23, 24 Connection pad [0072] 25 Fixation [0073] 30, 30a-d Opening