WIRE SHAPE MEASUREMENT DEVICE, WIRE THREE-DIMENSIONAL IMAGE GENERATION METHOD, AND WIRE SHAPE MEASUREMENT METHOD
20220180494 ยท 2022-06-09
Assignee
Inventors
- Takaya KINJO (Tokyo, JP)
- Shota NAKANO (Tokyo, JP)
- Akira SEKIKAWA (Tokyo, JP)
- Hiroshi Munakata (Tokyo, JP)
Cpc classification
H01L2924/00014
ELECTRICITY
G01B11/245
PHYSICS
H01L2924/00014
ELECTRICITY
H01L2224/78901
ELECTRICITY
H04N23/90
ELECTRICITY
International classification
Abstract
Provided is a wire shape measurement device of a semiconductor device comprising a substrate, a semiconductor element, and a wire connecting an electrode of the semiconductor element to an electrode of the substrate. The wire shape measurement device comprises: cameras that capture two-dimensional images of the semiconductor device; and a control unit that examines the shape of the wire based on the two-dimensional images of the semiconductor device acquired by the cameras. The control unit performs pattern matching using information on the position at which the wire is connected to the substrate or the semiconductor element and thickness information of the wire, and by utilizing the pattern matching, the control unit: generates a three-dimensional image of the wire from the two-dimensional images of the semiconductor device acquired by the cameras; and performs shape measurement of the wire based on the generated three-dimensional image of the wire.
Claims
1. A wire shape measurement device for a semiconductor device, which comprises: a substrate; a semiconductor element mounted on the substrate; and a wire connecting an electrode of the semiconductor element and an electrode of the substrate, or connecting one electrode of the semiconductor element and another electrode of the semiconductor element, the wire shape measurement device comprising: a plurality of cameras capturing two-dimensional images of the semiconductor device; and a control unit measuring a shape of the wire based on the two-dimensional images of the semiconductor device acquired by the cameras, wherein the control unit: respectively captures the two-dimensional images of the semiconductor device with the plurality of cameras, sets two-dimensional coordinate detection regions at predetermined intervals in a region that connects a start point and a terminal point of connection of the wire with the substrate or the semiconductor element in each of the two-dimensional images, searches the two-dimensional coordinate detection regions for a linear image corresponding to a diameter of the wire by pattern matching that superimposes a reference pattern and a detected image, repeats a plurality of times an operation of taking a center position of the linear image corresponding to the diameter of the wire as two-dimensional coordinates of the wire in the two-dimensional coordinate detection region, and respectively extracts two-dimensional coordinates corresponding to a portion of the wire from the two-dimensional images of the semiconductor device acquired by the cameras, calculates respective three-dimensional coordinates of a plurality of portions of the wire based on the two-dimensional coordinates respectively extracted and a position of each of the cameras, generates a three-dimensional image of the wire based on the three-dimensional coordinates calculated, and measures the shape of the wire based on the three-dimensional image of the wire generated.
2. (canceled)
3. (canceled)
4. The wire shape measurement device according to claim 1, wherein the cameras are respectively arranged on both sides of the wire so that optical axes of the cameras intersect a direction in which the wire extends.
5. The wire shape measurement device according to claim 1, wherein the control unit inspects the shape of the wire based on the three-dimensional image of the wire generated.
6. The wire shape measurement device according to claim 5, wherein the control unit inspects the shape of the wire by comparing the three-dimensional image of the wire generated with a reference shape of the wire.
7. The wire shape measurement device according to claim 6, wherein the control unit: extracts a shape parameter of the wire from the three-dimensional image of the wire generated, and inspects the shape of the wire by comparing the shape parameter extracted with a reference value of the shape parameter.
8. A wire three-dimensional image generation method for a semiconductor device, which comprises: a substrate; a semiconductor element mounted on the substrate; and a wire connecting an electrode of the semiconductor element and an electrode of the substrate, or connecting one electrode of the semiconductor element and another electrode of the semiconductor element, the wire three-dimensional image generation method comprising: an image capturing step of respectively capturing two-dimensional images of the semiconductor device with a plurality of cameras; a two-dimensional coordinate extraction step of setting two-dimensional coordinate detection regions at predetermined intervals in a region that connects a start point and a terminal point of connection of the wire with the substrate or the semiconductor element in each of the two-dimensional images, searching the two-dimensional coordinate detection regions for a linear image corresponding to a diameter of the wire by pattern matching that superimposes a reference pattern and a detected image, repeating a plurality of times an operation of taking a center position of the linear image corresponding to the diameter of the wire as two-dimensional coordinates of the wire in the two-dimensional coordinate detection region, and respectively extracting two-dimensional coordinates corresponding to a portion of the wire from the two-dimensional images of the semiconductor device acquired by the cameras; a three-dimensional coordinate calculation step of calculating respective three-dimensional coordinates of a plurality of portions of the wire based on the two-dimensional coordinates respectively extracted and a position of each of the cameras; and a three-dimensional image generation step of generating a three-dimensional image of the wire based on the three-dimensional coordinates calculated.
9. (canceled)
10. (canceled)
11. A wire shape measurement method for a semiconductor device, which comprises: a substrate; a semiconductor element mounted on the substrate; and a wire connecting an electrode of the semiconductor element and an electrode of the substrate, or connecting one electrode of the semiconductor element and another electrode of the semiconductor element, the wire shape measurement method comprising: an image capturing step of respectively capturing two-dimensional images of the semiconductor device with a plurality of cameras; a two-dimensional coordinate extraction step of setting two-dimensional coordinate detection regions at predetermined intervals in a region that connects a start point and a terminal point of connection of the wire with the substrate or the semiconductor element in each of the two-dimensional images, searching the two-dimensional coordinate detection regions for a linear image corresponding to a diameter of the wire by pattern matching that superimposes a reference pattern and a detected image, repeating a plurality of times an operation of taking a center position of the linear image corresponding to the diameter of the wire as two-dimensional coordinates of the wire in the two-dimensional coordinate detection region, and respectively extracting two-dimensional coordinates corresponding to a portion of the wire from the two-dimensional images of the semiconductor device acquired by the cameras; a three-dimensional coordinate calculation step of calculating respective three-dimensional coordinates of a plurality of portions of the wire based on the two-dimensional coordinates respectively extracted and a position of each of the cameras; a three-dimensional image generation step of generating a three-dimensional image of the wire based on the three-dimensional coordinates calculated; and a measurement step of measuring a shape of the wire based on the three-dimensional image of the wire generated.
12. The wire shape measurement method according to claim 11, comprising an inspection step of inspecting the shape of the wire based on the three-dimensional image of the wire generated.
13. The wire shape measurement method according to claim 12, wherein the inspection step inspects the shape of the wire by comparing the three-dimensional image of the wire generated with a reference shape of the wire.
14. The wire shape measurement method according to claim 13, wherein the inspection step extracts a shape parameter of the wire from the three-dimensional image of the wire generated, and inspects the shape of the wire by comparing the shape parameter extracted with a reference value of the shape parameter.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0026]
[0027]
[0028]
[0029]
[0030]
[0031]
DESCRIPTION OF THE EMBODIMENTS
[0032] Hereinafter, a wire shape measurement device 100 according to an embodiment will be described with reference to the drawings. As shown in
[0033] As shown in
[0034] Next, an operation of the wire shape measurement device 100 according to the embodiment will be described with reference to
[0035] As shown in step S101 of
[0036] Next, as shown in step S102 of
[0037] When the wire 30 is imaged by the camera 43 arranged on the Y-direction plus side of the semiconductor device 10, as shown in
[0038] Next, as shown in step S104 of
[0039] Similarly, as shown in
[0040] Since the two-dimensional coordinates (x31, y31) acquired from the image of the camera 43 and the two-dimensional coordinates (x41, y41) acquired from the image of the camera 44 in step S105 of
[0041] Therefore, in step S107 of
[0042] Then, in step S108 of
[0043] In step S109 of
[0044] In addition, the control unit 50 may also measure the shape parameters of the wire 30 from the generated three-dimensional image of the wire 30, for example, the shape dimensions such as the loop height which is the height from the start end 31 of the wire 30, the thickness of the crimp ball formed at the start end 31, the diameter of the crimp ball, etc., and compare each measured shape dimension with a reference value to perform the inspection.
[0045] As described above, since the wire shape measurement device 100 can generate the three-dimensional image of the wire 30 from the two-dimensional images of the semiconductor device 10 acquired by the cameras 43 and 44 by pattern matching using the two-dimensional coordinates (xs, ys) and (xe, ye) of the start end 31 and the terminal end 32 of the wire 30 and the diameter of the wire 30, the three-dimensional image can be generated accurately in a short time. Thus, it is possible to perform shape measurement and shape inspection on the wire 30 with high accuracy in a short time.
[0046] After inspection of the shape of the wire 30 extending in the Y direction, shape measurement and shape inspection are performed by performing the same processing based on the two-dimensional images captured by the cameras 41 and 42.
[0047] Furthermore, the two-dimensional images acquired by the four cameras 41 to 44, instead of the two cameras 41 and 42 or the two cameras 43 and 44, may be processed to generate the three-dimensional image of the wire 30. In addition, the two-dimensional images of four or more cameras may be processed to generate the three-dimensional image of the wire 30.
[0048] The above-described embodiment illustrates that the wire 30 for shape measurement or shape inspection connects the electrode 25 of the semiconductor element 20 and the electrode 12 of the substrate 11, but the present invention is not limited thereto. For example, the present invention can also be applied to the inspection of the shape of the wire 30 that continuously connects the electrode 25 of the semiconductor element 20 of each layer, the electrode 25 of the semiconductor element 20 of the lowermost layer, and the electrode 12 of the substrate 11 in the semiconductor device 10 which laminates a plurality of semiconductor elements 20 on the substrate 11. In such a case, the wire 30 connects one electrode 25 of the semiconductor element 20 of one layer and another electrode 25 of the semiconductor element 20 of another layer, and connects the electrode 25 of the semiconductor element 20 of the lowermost layer and the electrode 12 of the substrate 11.
[0049] Further, when a wire shape measurement method is executed using the wire shape measurement device 100 according to the embodiment, capturing the two-dimensional images of the semiconductor device 10 with the cameras and storing them in the memory 52, as shown in steps S102 and S103 shown in
[0050] Further, the step of extracting the two-dimensional coordinates, as in steps S104 to S106 of
[0051] Further, when a wire three-dimensional image generation method is executed using the wire shape measurement device 100 according to the embodiment, capturing the two-dimensional images of the semiconductor device 10 with the cameras and storing them in the memory 52, as shown in steps S102 and S103 of
DESCRIPTIONS OF REFERENCE NUMERALS
[0052] 10 semiconductor device; 11 substrate; 12, 25 electrode; 20 semiconductor element; 30 wire; 31 start end; 32 terminal end; 41 to 44 camera; 41a to 44a optical axis; 50 control unit; 51 CPU; 52 memory; 60 two-dimensional coordinate detection region; 100 wire shape measurement device.