Chip Interconnecting Method, Interconnect Device and Method for Forming Chip Packages
20220181297 · 2022-06-09
Inventors
Cpc classification
H01L24/95
ELECTRICITY
H01L2224/81203
ELECTRICITY
H01L23/481
ELECTRICITY
H01L25/50
ELECTRICITY
H01L2224/18
ELECTRICITY
H01L23/3128
ELECTRICITY
H01L2224/95001
ELECTRICITY
H01L24/82
ELECTRICITY
H01L2224/81143
ELECTRICITY
H01L21/568
ELECTRICITY
H01L21/486
ELECTRICITY
H01L24/96
ELECTRICITY
H01L2224/16227
ELECTRICITY
H01L24/73
ELECTRICITY
H01L23/49827
ELECTRICITY
H01L2224/16157
ELECTRICITY
International classification
H01L25/065
ELECTRICITY
H01L21/48
ELECTRICITY
Abstract
The present disclosure provides a chip interconnecting method, an interconnect device and a method for forming a chip interconnection package. The method comprises arranging at least one chipset on a carrier, each chipset including at least a first chip and a second chip. A contact surface (or diameter) of each of the first bumps is smaller than that of any of the second bumps. The method further comprises attaching an interconnect device to the first chip and the second chip, the interconnect device including first pads for bonding to corresponding bumps on the first chip and second pads for bonding to corresponding bumps on the second chip. Attaching the interconnect device includes aligning the plurality of first pads with the corresponding bumps on the first chip whereby the plurality of second pads are self-aligned for bonding to the plurality of second bumps.
Claims
1. A method of chip interconnection, comprising: arranging at least one chipset on a surface of a carrier, each chipset including at least a first chip and a second chip, the first chip including first bumps formed on a front surface of the first chip, the second chip including second bumps formed on a front surface of the second chip, wherein the first bumps include a plurality of bumps having a first density and the second bumps include a plurality of bumps having a second density, the first density being higher than the second density; and attaching an interconnect device to a first portion of the front surface of the first chip and a second portion of the front surface of the second chip, the interconnect device having a first side and a plurality pads formed on a surface of the first side, the plurality of pads including a plurality of first pads for respectively bonding to the plurality of bumps having the first density on the first chip and a plurality of second pads for respectively bonding to plurality of bumps having the second density on the second chip, wherein attaching the interconnect device includes aligning the plurality of first pads with the corresponding bumps on the first chip whereby the plurality of second pads are self-aligned for bonding to the plurality of second bumps.
2. The method of claim 1, wherein a contact surface or diameter of each of the first bumps is smaller than that of any of the second bumps.
3. The method of claim 1, wherein the corresponding interconnect device includes a fan-out circuit between the plurality of first pads and the plurality of second pads to enable the first chip to be electrically connected to the second chip through the interconnect device.
4. The method of claim 1, wherein each interconnect device includes vertical interconnect vias.
5. The method of claim 1, wherein each interconnect device is formed as a passive device or an active device.
6. The method of claim 1, further comprising: bonding the plurality of first pads to corresponding first bumps and the plurality of second pads to corresponding second bumps to enable the first chip to be electrically connected to the second chip through the corresponding interconnect device; forming a molded encapsulation layer whereby the first chip, the second chip and the interconnect device are embedded in the molded encapsulation layer; thinning one side of the molded encapsulation layer that is facing away from the carrier to expose some of the first bumps and the second bumps; forming third bumps on the side of the molded encapsulation layer, where some of the first bumps and the second bumps are exposed; and removing the carrier.
7. The method of claim 6, wherein the at least one chipset includes multiple chipsets, the method further comprising: after removing the carrier, dicing the molded encapsulation layer with the multiple chipsets embedded therein to obtain a plurality of unit packages, wherein each unit package includes a chipset.
8. An interconnect device, comprising, a surface; first bonding pads and second bonding pads formed on the surface, wherein the first bonding pads are configured to bond to corresponding first bumps on a first chip, and the second bonding pads are configured to bond to corresponding second bumps on a second chip, the first bumps having a higher density than the second bumps; a fan-out circuit formed between the first bonding pads and the second bonding pads and configured to provide electrical connections between the first bonding pads and the second bonding pads.
9. The interconnect device of claim 8, wherein a contact surface or diameter of each of the first bumps is smaller than that of any of the second bumps.
10. The interconnect device of claim 8, further comprising vertical interconnect vias.
11. The interconnect device of claim 8, wherein the interconnect device is formed as a passive device or an active device.
12. The interconnect device of claim 8, wherein the interconnect device includes one or more of: silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN).
13. The interconnect device of claim 8, wherein the interconnect device includes one or more of: glass and ceramic.
14. The interconnect device of claim 8, wherein the interconnect device includes a package substrate material comprising one or more of: printed Circuit Board (PCB), plastic envelope base plate (EMC), and flexible circuit board.
15. The interconnect device of claim 8, wherein the interconnect device includes a metal substrate material comprising one or more of: copper and aluminum.
16. The interconnect device of claim 8, wherein the interconnect device is configured to perform one or more functions of integrated circuits, micro-electro-mechanical systems (MEMS), optoelectronic devices, and passive devices (IPD).
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0025] The advantages and benefits described herein, as well as other advantages and benefits, will be apparent to those of ordinary skill in the art upon reading the following detailed description of some embodiments. The drawings are only for purposes of illustrating exemplary embodiments and are not to be construed as limiting the invention recited in the claims. Also, like reference numerals are used to refer to like elements throughout. In the drawings:
[0026]
[0027]
[0028]
[0029]
[0030] In the drawings, the same or corresponding reference numerals indicate the same or corresponding parts.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0031] Certain embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein.
[0032] The following disclosure provides various embodiments, or examples, for implementing different features of the embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to limit the invention. For example, in the following description, attaching the interconnect device 13 to the front surfaces of the first chip 11 and the second chip 12 may include an embodiment in which the first chip 11, the second chip 12, and the interconnect device 13 are formed in direct contact, and may also include an embodiment in which additional members may be formed between the first chip 11, the second chip 12, and the interconnect device 13, so that the first chip 11, the second chip 12, and the interconnect device 13 may not be in direct contact. Further, the present invention may repeat reference numerals and/or characters in the various embodiments. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
[0033] It will be understood that terms such as “including” or “having,” or the like, are intended to indicate the presence of the disclosed features, integers, steps, acts, components, parts, or combinations thereof, and are not intended to preclude the presence or addition of one or more other features, integers, steps, acts, components, parts, or combinations thereof.
[0034] Also, spatially relative terms, such as “below . . . ,” “under . . . ,” “down,” “above . . . ,” “up,” and the like, may be used herein for ease of description to describe one element or component's relationship to another element (or other) component as illustrated. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
[0035] It should be noted that certain embodiments and/or certain features of the embodiments may be combined with each other without conflict.
[0036] Certain embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein.
[0037] It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
[0038]
[0039] Referring to
[0040] Referring to
[0041] It is understood that mounting errors inevitably occur during the packaging of the semiconductor chip. In step 101, when the first chip 11 and the second chip 12 are mounted on a surface on one side of the carrier 10, a certain degree of mounting pitch error may be generated. For example, the actual chip pitch between the first chip 11 and the second chip 12 is closer or farther than the pre-designed chip pitch. As another example, the chip placement positions designed in advance are that the first chip 11 and the second chip 12 are placed side by side in parallel, and in the actual placement process, the first chip 11 and the second chip 12 cannot be placed completely in parallel, but have an angle error. Mounting errors such as these are inevitably present during chip placement.
[0042] Referring to
[0043] Referring to
[0044] In some embodiments, the interconnect device 13 is for attaching over a first edge region of the first chip and a second edge region of the second chip across a gap between the first chip and the second chip. A plurality of first pads 131 distributed on a surface on one side of the interconnect device 13 are used for being mutually jointed with the first edge region containing a plurality of first bumps 21, and a plurality of second pads 132 distributed are used for being mutually jointed with the second edge region containing a plurality of second bumps 22. It should be understood that the pad positions of the first pads 131 and the second pads 132 in the interconnect device are determined by preset chip placement positions and bump distribution positions on the first chip 11 and the second chip 12. For example, when the chip pitch between the first chip 11 and the second chip 12 determined in the chip design is wider, the first chip 11 and the second chip 12 shown in
[0045] Since in step 101 there is an unavoidable installation error, in some embodiments, step 102 further includes specific mounting steps 102a for attaching the interconnect device 13 to the front surfaces of the first chip 11 and the second chip 12, which involves aligning and bonding the plurality of first pads of the interconnect device 13 to corresponding first bumps, whereby the plurality of second pads 132 of the interconnect device 13 are self-aligned and respectively bonded to corresponding second bumps 22 of the second chip. In other words, the plurality of first bumps 21 and the first pads 131 which are aligned and bonded are taken as reference, so that the plurality of second pads 132 of the interconnect device 13 are self-aligned and respectively bonded to corresponding second bumps based on the self-tension of the interconnect device.
[0046] Referring to
[0047] In some embodiments, the first bumps 21 and the first pads 131 may have contact surfaces (or diameters) of the same or similar shape and size, and thus may facilitate precise alignment between the first bump 21 and the first pad 131. Alignment errors between the second bump 22 and the second pad 132 due to alignment errors between the first bumps 21 and the first pads 131 are thus avoided or reduced.
[0048] In some embodiments, referring to
[0049] In some embodiments, referring to
[0050] In some further embodiments, any other type of interconnection circuit may be formed between the plurality of first pads 131 and the plurality of second pads 132 of the interconnect device 13 as long as the interconnection circuit can achieve electrical coupling between any one or more first pads 131 and any one or more second pads 132.
[0051] In some embodiments, the contact surface (or diameter) of the first pad 131 is smaller than the contact surface (or diameter) of the second pad 132, so that the second pad 132 has a larger tolerance due to its larger contact area (or diameter), and after the first pad 131 and corresponding first bump 21 are aligned and bonded, the plurality of second pads 132 of the interconnect device 13 having the larger tolerance can be self-aligned and bonded onto corresponding second bumps having the larger tolerance. To improve the error tolerance,
[0052] An interconnect device is provided in some embodiments, and
[0053] Referring to
[0054] In some embodiments, the interconnect device is formed as an interconnect device with vertical interconnect vias.
[0055] In some embodiments, the interconnect device is formed as a passive device or an active device.
[0056] In some embodiments, the interconnect device is made of a semiconductor material, including one or more of the following: silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN).
[0057] In some embodiments, the interconnect device is an inorganic material, including one or more of the following: glass, ceramic.
[0058] In some embodiments, the interconnect device is a package substrate material including one or more of the following: printed Circuit Board (PCB), molded package substrate (EMC), flexible circuit board.
[0059] In some embodiments, the interconnect device is a metal substrate material, including one or more of the following: copper and aluminum.
[0060] In some embodiments, the interconnect device is accompanied by functions of an integrated circuit, a micro-electro-mechanical system (MEMS), an optoelectronic component, and a passive component (IPD). The embodiment of the application also provides a method for forming the packaging piece.
[0061] According to some embodiments, a method of making chip packages comprises providing a carrier 10 and at least one set of chips. In some embodiments, each set of chips comprises at least a first chip 11 and a second chip 12. Referring to
[0062] In a possible embodiment, the number of the chip sets is greater than 1, and the method further includes: after removing the carrier 10, the molded encapsulation layer with the chipsets embedded therein is diced to obtain a plurality of unit packages, each of which contains a chipset. Thereby enabling large-scale packaging.
[0063] The chip interconnecting method and the interconnect device provided by the embodiment of the application can also be applied to packaging semiconductor chips in a stacked manner. For example, referring to
[0064] While the spirit and principles of the invention have been described with reference to several particular embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, nor is the division of aspects, which is for convenience only as the features in such aspects may not be combined to benefit. The invention is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.