Transparent electrode for optoelectronic components

Abstract

An optoelectronic component on a substrate includes a first and a second electrode. The first electrode is arranged on the substrate and the second electrode forms a counter electrode. At least one photoactive layer system is arranged between these electrodes. The at least one photoactive layer system including at least one donor-acceptor system having organic materials.

Claims

1. An organic solar cell on a substrate comprising a first electrode and a second electrode, wherein the first electrode is arranged on the substrate and the second electrode forms a counter electrode, wherein at least one photoactive layer system is arranged between the first electrode and the second electrode, and the at least one photoactive layer system comprises at least one donor-acceptor system having organic materials, wherein the counter electrode includes a first layer comprising Ag or a metal alloy comprising Ag, a second layer being arranged on the first layer and having a layer thickness between 10 and 100 nm and an index of refraction of more than 2, wherein the second layer comprises an alkali or alkaline earth metal or a nitride, selenide, sulfide, oxide, or telluride, a first intermediate layer made of Ca, Mg, or MoO.sub.x, wherein the first intermediate layer is arranged between the first layer and the second layer, and a second intermediate layer made of Nb.sub.2O.sub.5, wherein the second intermediate layer has a layer thickness between 5 and 40 nm and is incorporated between the first intermediate layer and the first layer.

2. The organic solar cell according to claim 1, wherein the metal alloy comprises an alloy of Ag and Ca or an alloy of Ag and Mg.

3. The organic solar cell according to claim 2, wherein a proportion of the Ag or Ca or Mg is at least 30%.

4. The organic solar cell according to claim 1, wherein the first intermediate layer of the counter electrode has a layer thickness between 0.1 and 100 nm and is deposited by thermal vapor deposition.

5. The organic solar cell according to claim 1, wherein the first layer of the counter electrode has a layer thickness between 3 and 20 nm.

6. The organic solar cell according to claim 1, wherein a protective layer comprising a metal oxide and having a layer thickness greater than 100 nm is arranged on the second layer.

7. The organic solar cell according to claim 1, wherein a further intermediate layer made of a metal or metal oxide is incorporated between the first layer and the second layer of the counter electrode.

8. The organic solar cell according to claim 1, wherein the substrate is opaque or transparent.

9. The organic solar cell according to claim 1, wherein the substrate is flexible.

10. The organic solar cell according to claim 1, wherein the cell comprises a pin single cell, pin tandem cell, pin multiple cell, nip single cell, nip tandem cell, or nip multiple cell.

11. The organic solar cell according to claim 5, wherein the first layer of the counter electrode has a layer thickness between 5 to 10 nm.

12. The organic solar cell according to claim 1, wherein the second layer has an index of refraction of 2.2.

Description

BRIEF DESCRIPTION OF THE DRAWING FIGURES

(1) The invention is to be described in greater detail hereafter on the basis of several exemplary embodiments and figures. The exemplary embodiments are to describe the invention in this case without restricting it. In the figures:

(2) FIG. 1 shows a schematic illustration of a first embodiment according to the invention of an electrode arrangement,

(3) FIG. 2 shows a schematic illustration of a second embodiment according to the invention of an electrode arrangement,

(4) FIG. 3 shows a schematic illustration of a third embodiment according to the invention of an electrode arrangement, and

(5) FIG. 4 shows a schematic illustration of a fourth embodiment according to the invention of an electrode arrangement.

DETAILED DESCRIPTION

(6) In one exemplary embodiment of the invention, an electrode arrangement 1 according to the invention is shown in FIG. 1, which comprises a first intermediate layer 3 made of a metal or metal oxide, for example, made of MoO.sub.3. The first intermediate layer 3 is deposited in this case by thermal vapor deposition on an organic layer of the component. A first layer 2 comprising a metal, for example, Ag, is deposited thereon. The deposition is performed in this case by means of sputtering. A second layer 4 is arranged as an antireflection layer, which comprises, for example, N,N′-bis(naphthalene-1-yl)-N,N′-bis(phenyl)-benzidine, on this first layer 2.

(7) In a further exemplary embodiment of the invention (not shown in greater detail), the electrode arrangement 1 according to the invention comprises a first intermediate layer 3 made of a metal or metal oxide, for example, made of MoO.sub.3. The first intermediate layer 3 is deposited in this case by thermal vapor deposition on an organic layer of the component. A first layer 2 comprising a metal alloy, for example, Ag:Ca, is deposited thereon. The deposition is performed in this case by means of sputtering. A second layer 4 is arranged as an antireflection layer, which comprises, for example, N,N′-bis(naphthalene-1-yl)-N,N′-bis(phenyl)-benzidine, on this first layer 2.

(8) In a further exemplary embodiment of the invention (not shown in greater detail), the electrode arrangement 1 according to the invention comprises a first intermediate layer 3 made of an alkali or alkaline earth metal, for example, made of Ca. The first intermediate layer 3 is deposited in this case by thermal vapor deposition on an organic layer of the component. A first layer 2 comprising a metal alloy, for example, Ag:Ca, is deposited thereon. The deposition is performed in this case by means of sputtering. A second layer 4 is arranged as an antireflection layer, which comprises, for example, ZnS, ZnSe, or ZnTe, on this first layer 2.

(9) In a further exemplary embodiment of the invention (not shown in greater detail), the electrode arrangement 1 according to the invention comprises a first intermediate layer 3 made of an alkali or alkaline earth metal, for example, made of Mg. The first intermediate layer 3 is deposited in this case by thermal vapor deposition on an organic layer of the component. A first layer 2 comprising a metal alloy, for example, Ag:Mg, is deposited thereon. The deposition is performed in this case by means of sputtering. A second layer 4 is arranged as an antireflection layer, which comprises, for example, ZnS, ZnSe, or ZnTe, on this first layer 2.

(10) In a further exemplary embodiment, a further design of an electrode arrangement 1 is shown in FIG. 2, which comprises the same structure as the preceding exemplary embodiment, wherein a scratch protection layer 5 is arranged on the second layer 4. This scratch protection layer 5 can be embodied from TiO.sub.2, for example, and can have a layer thickness of 150 nm.

(11) In a further exemplary embodiment, a schematic illustration of an electrode arrangement 1 is shown in FIG. 3, which comprises a first intermediate layer 3 made of a metal or metal oxide, for example, made of MoO.sub.3. A second intermediate layer 6 made of Nb.sub.2O.sub.5 is arranged thereon, which has a layer thickness between 5 and 40 nm. The first layer 2 made of metal, for example, Ag, is deposited on this second intermediate layer 6, wherein the deposition is performed by sputtering. A second layer 4 is arranged as an antireflection layer, which comprises, for example, N, N′-bis(naphthalene-1-yl)-N, N′-bis(phenyl)-benzidine on this first layer 3. A scratch protection layer 5 is arranged on this second layer 4. This scratch protection layer 5 can be embodied from TiO.sub.2, for example, and can have a layer thickness of 150 nm.

(12) In a further exemplary embodiment (not shown in greater detail), an electrode arrangement 1 comprises a first intermediate layer 3 made of a metal or metal oxide, for example, made of MoO.sub.3. A second intermediate layer 6 made of Mg is arranged thereon, which has a layer thickness between 5 and 40 nm. The first layer 3 made of a metal alloy, for example, Ag:Mg, is deposited on this second intermediate layer 6, wherein the deposition is performed by sputtering. A second layer 4 is arranged as an antireflection layer, which comprises, for example, ZnS, on this first layer 3. A scratch protection layer 5 is arranged on this second layer 4. This scratch protection layer 5 can be embodied from TiO.sub.2, for example, and can have a layer thickness of 150 nm.

(13) In a further exemplary embodiment (not shown in greater detail), an electrode arrangement 1 comprises a first intermediate layer 3 made of a metal or metal oxide, for example, made of MoO.sub.3. A second intermediate layer 6 made of Ca is arranged thereon, which has a layer thickness between 5 and 40 nm. The first layer 3 made of a metal alloy, for example, Ag:Ca, is deposited on this second intermediate layer 6, wherein the deposition is performed by sputtering. A second layer 4 is arranged as an antireflection layer, which comprises, for example, ZnSe, on this first layer 3. A scratch protection layer 5 is arranged on this second layer 4. This scratch protection layer 5 can be embodied from TiO.sub.2, for example, and can have a layer thickness of 150 nm.

(14) In one design of the above-described exemplary embodiment (not shown in greater detail), the second intermediate layer 6 is embodied from aluminum-doped zinc oxide (AZO). The layer thickness can be between 5 and 40 nm in this case.

(15) In one design of the above-described exemplary embodiment (not shown in greater detail), the second intermediate layer 6 is embodied from Al. The layer thickness can be between 0.2 and 3 nm in this case.

(16) In one design of the above-described exemplary embodiment (not shown in greater detail), the electrode arrangement 1 has a first intermediate layer 3, which comprises a metal or metal oxide, for example, made of MoO.sub.3. A second intermediate layer 6 made of Nb.sub.2O.sub.5 is arranged thereon, which has a layer thickness between 5 and 40 nm. The first layer 3 made of a metal, for example, Ag, is deposited on this second intermediate layer 6, wherein the deposition is performed by sputtering. A scratch protection layer 5 is arranged on this first layer 3. This scratch protection layer 5 can be embodied from TiO.sub.2, for example, and can have a layer thickness of 150 nm.

(17) In a further exemplary embodiment, a schematic illustration of an electrode arrangement 1 is shown in FIG. 4, which comprises a first intermediate layer 3 made of a metal or metal oxide, for example, made of MoO.sub.3. A second intermediate layer 6 made of Nb.sub.2O.sub.5 is arranged on this first intermediate layer 3, which has a layer thickness between 5 and 40 nm. A first layer 2 made of a metal, for example, Ag, is arranged thereon, wherein the deposition of the first layer 2 is performed by means of sputtering. A third intermediate layer 7, for example, made of ITO, is arranged on this first layer 2. The layer thickness of this third intermediate layer 7 made of ITO is between 5 and 40 nm. A second layer 4 is arranged as an antireflection layer, which comprises, for example, N,N′-bis(naphthalene-1-yl)-N,N′-bis(phenyl)-benzidine, on this third intermediate layer 7. A scratch protection layer 5 is arranged on this second layer 4. This scratch protection layer 5 can be embodied from TiO.sub.2, for example, and can have a layer thickness of 150 nm.

(18) In one design of the above-described exemplary embodiment, the third intermediate layer 7 is embodied from aluminum-doped zinc oxide AZO, wherein this intermediate layer has a layer thickness between 5 and 40 nm.

(19) In a further design of the above-described exemplary embodiment (not shown in greater detail), the electrode arrangement 1 has a first intermediate layer 3, which comprises a metal or metal oxide, for example, made of MoO.sub.3. A second intermediate layer 6 made of Nb.sub.2O.sub.5 is arranged on this first intermediate layer 3, which has a layer thickness between 5 and 40 nm. A first layer 3 made of a metal, for example, Ag, is arranged thereon, wherein the deposition of the first layer 2 is performed by means of sputtering. A third intermediate layer 7, for example, made of ITO, is arranged on this first layer 2. The layer thickness of this third intermediate layer 7 made of ITO is between 5 and 40 nm. A scratch protection layer 5 is arranged on this third intermediate layer 7. This scratch protection layer 5 can be embodied from TiO.sub.2, for example, and can have a layer thickness of 150 nm.

(20) In a further design of the above-described exemplary embodiment (not shown in greater detail), the electrode arrangement 1 has a first intermediate layer 3, which comprises a metal or metal oxide, for example, made of MoO.sub.3. A second intermediate layer 6 made of Nb.sub.2O.sub.5 is arranged on this first intermediate layer 3, which has a layer thickness between 5 and 40 nm. A first intermediate layer 2 made of a metal, for example, Ag, is arranged on this second intermediate layer 6, wherein the deposition of the first layer 2 is performed by means of sputtering. A third intermediate layer 7, for example, made of ITO, is arranged on this first layer 2. The layer thickness of this third intermediate layer 7 made of ITO is between 5 and 40 nm. A second layer 4 is arranged as an antireflection layer, which comprises, for example, N,N′-bis(naphthalene-1-yl)-N,N′-bis(phenyl)-benzidine, on this third intermediate layer 7. A scratch protection layer 5 is arranged on this second layer 4. This scratch protection layer 5 can be embodied from TiO.sub.2, for example, and can have a layer thickness of 150 nm.

(21) In a further exemplary embodiment (not shown in greater detail), the electrode arrangement 1 comprises a first intermediate layer 3 made of a metal or metal oxide, for example, made of MoO.sub.3. A second intermediate layer 6 made of Mg is arranged on this first intermediate layer 3, which has a layer thickness between 5 and 40 nm. A first layer 2 made of a metal alloy, for example, Ag:Mg, is deposited on this second intermediate layer 6, wherein the deposition of the first layer 2 is performed by sputtering. A third intermediate layer 7, for example, made of Mg, is arranged on this first layer 2. The layer thickness of this third intermediate layer 7 made of Mg is between 5 and 40 nm. A second layer 4 is arranged as an antireflection layer, which comprises, for example, ZnS, ZnSe, or ZnTe, on this third intermediate layer 7. A scratch protection layer 5 is arranged on this second layer 4. This scratch protection layer 5 can be embodied from TiO.sub.2, for example, and can have a layer thickness of 150 nm.

(22) In a further exemplary embodiment (not shown in greater detail), the electrode arrangement 1 comprises a first intermediate layer 3 made of a metal or metal oxide, for example, made of MoO.sub.3. A second intermediate layer 6 made of Nb.sub.2O.sub.5 is arranged on this first intermediate layer 3, which has a layer thickness between 5 and 40 nm. A first layer 2 made of a metal, for example, Ag, is deposited on this second intermediate layer 6, wherein the deposition of the first layer 2 is performed by sputtering. A third intermediate layer 7, for example, made of ITO, is arranged on this first layer 2. The layer thickness of this third intermediate layer 7 made of ITO is between 5 and 40 nm. A scratch protection layer 5 is arranged on this third intermediate layer 7. This scratch protection layer 5 can be embodied from TiO.sub.2, for example, and can have a layer thickness of 150 nm.