Display panel and method of manufacturing the same

Abstract

A display panel and a method of manufacturing the same are provided. The method of manufacturing the display panel includes providing a substrate, and forming other layers on the substrate sequentially. Accordingly, a first via hole, a second via hole, and a third via hole are formed. The first via hole and the second via hole are filled with a flexible material to form a flexible layer and a stress release unit, respectively. Then, a metal layer which fills the third via hole is formed on the interlayer dielectric layer.

Claims

1. A method of manufacturing a display panel, comprising: step S10, providing a substrate, sequentially forming a water-oxygen barrier layer, a buffer layer, an active layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a second gate layer, and an interlayer dielectric layer on the substrate, to form a first substrate including a display area and a non-display area; step S20, forming a first via hole in the non-display area of the first substrate, forming a second via hole in a display area of the first substrate, wherein the first via hole is in contact with the substrate and penetrates through all of the layers other than the substrate, and the second via hole is in contact with the water-oxygen barrier layer and penetrates through all of the layers other than the substrate and the water-oxygen barrier layer; step S30, filling the first via hole and the second via hole with a flexible material to form a flexible layer in the first via hole and a flexible material unit in the second via hole; step S40, forming a third via hole in the display region of the first substrate, wherein the third via hole is in contact with the active layer; and step S50, forming a metal layer on the interlayer dielectric layer, wherein the third via hole is filled with the metal layer, wherein the first via hole comprises superimposed first and second regions; and wherein the step S20 comprises: step S201, performing a lithography process using a first photomask to form the first region of the first via hole in the non-display area of the first substrate, wherein the first photomask has a pattern matching a pattern of the first region of the first via hole; step S202, performing a lithography process using a second photomask to form the second region of the first via hole in the first via hole, thereby forming the first via hole, wherein the second photomask has a pattern matching a pattern of the second region of the first via hole; and step S203: performing a lithography process using a third photomask to form the second via hole in the display area of the first substrate, wherein the third photomask has a pattern matching a pattern of the second via hole.

2. The method of manufacturing the display panel of claim 1, wherein the step S20 comprises: step S201, performing a lithography process using a first photomask to form the first region of the first via hole in the non-display area of the first substrate, the first photomask has a pattern matching a pattern of the first region of the first via hole; Step S202, performing a lithography process using a fourth photomask to form the second region of the first via hole in the first region of the first via hole, and forming the second via hole in the display region of the first substrate simultaneously, wherein the fourth photomask has a pattern matching a pattern of the second region of the first via hole and a pattern of the second via hole.

3. The method of manufacturing the display panel of claim 1, wherein the step S40 comprises: performing a lithography process using a fifth photomask to form a third via hole in the display area of the first substrate, and the fifth photomask matches a pattern of the third via hole.

4. A method of manufacturing a display panel, comprising: step S10, providing a substrate, sequentially forming a water-oxygen barrier layer, a buffer layer, an active layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a second gate layer, and an interlayer dielectric layer on the substrate, to form a first substrate including a display area and a non-display area; step S20, forming a first via hole in the non-display area of the first substrate, forming a second via hole and a third via hole in a display area of the first substrate, wherein the first via hole is in contact with the substrate and penetrates through all of the layers other than the substrate, the second via hole is in contact with the water-oxygen barrier layer and penetrates through all of the layers other than the substrate and the water-oxygen barrier layer, and the third via hole is in contact with the active layer; step S30, filling the first via hole and the second via hole with a flexible material to form a flexible layer in the first via hole and a flexible material unit in the second via hole; and step S40, forming a metal layer on the interlayer dielectric layer, the third via hole being filled with the metal layer; wherein the first via hole, the second via hole and the third via hole are prepared by gas etching using an etching gas comprising hydrogen, wherein the first via hole comprises superimposed first and second regions; and wherein the step S20 comprises: step S201, performing a lithography process using the first photomask to form the first region of the first via hole in the non-display area of the first substrate, wherein the first photomask has a pattern matching a pattern of the first region of the first via hole; and step S202, performing a lithography process using a sixth photomask to form the second region of the first via hole in the first via hole, and to form the second via hole and the third via hole in the display area simultaneously, wherein the sixth photomask has a pattern matching a pattern of the second region of the first via hole, a pattern of the second via hole, and a pattern of the third via hole.

5. The method of manufacturing a display panel of claim 4, wherein the step S20 comprises: performing a lithography process using a seventh photomask to form the first via hole, the second via hole and the third via hole on the first substrate, wherein the seventh photomask has a pattern matching a pattern of the first via hole, a pattern of the second via hole, and a pattern of the third via hole.

6. The method of manufacturing a display panel of claim 4, wherein the substrate is a flexible substrate, and the flexible substrate comprises polyimide.

7. The method of manufacturing a display panel of claim 4, wherein the first via hole is formed by a dry etching process.

8. The method of manufacturing a display panel of claim 4, wherein the second via hole is disposed between pixel units of the display area and is separated from a functional device in the display area.

9. The method of manufacturing a display panel of claim 4, wherein the flexible material is an organic material.

10. The method of manufacturing a display panel of claim 4, further comprising forming a planarization layer, an anode layer, a pixel definition layer, and a support layer on the metal layer.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

(1) In order to more clearly illustrate the embodiments or the technical solutions of the existing art, the drawings illustrating the embodiments or the existing art will be briefly described below. Obviously, the drawings in the following description merely illustrate some embodiments of the present invention. Other drawings may also be obtained by those skilled in the art according to these figures without paying creative work.

(2) FIG. 1 is a schematic flow chart of a method of manufacturing a display panel according to an embodiment of the present invention.

(3) FIGS. 2a, 2b, 2c, 2d, 2e, 2f, and 2g are schematic structural diagrams of a method of manufacturing a display panel according to an embodiment of the present invention.

(4) FIGS. 3a-3b are schematic structural diagrams of step S20 in a method of manufacturing a display panel according to another embodiment of the present invention.

(5) FIG. 4 is a schematic flow chart of a method of manufacturing a display panel according to a further embodiment of the present invention.

(6) FIGS. 5a, 5b, 5c and 5d are schematic structural diagrams of a method of manufacturing a display panel according to a further embodiment of the present invention.

(7) FIG. 6 is a schematic structural diagram of step S20 in a method of manufacturing a display panel according to still another embodiment of the present invention.

(8) FIG. 7 is a schematic structural diagram of a display panel according to still a further embodiment of the present invention.

DESCRIPTION OF SPECIFIC EMBODIMENTS OF THE INVENTION

(9) The following description of the various embodiments is provided to illustrate the specific embodiments of the invention. The spatially relative directional terms mentioned in the present invention, such as “upper”, “lower”, “before”, “after”, “left”, “right”, “inside”, “outside”, “side”, etc. and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures which are merely references. The spatially relative terms are intended to encompass different orientations in addition to the orientation as depicted in the figures.

(10) Please refer to FIG. 1 and FIGS. 2a-2g. FIG. 1 is a schematic flow chart of a method of manufacturing a display panel according to an embodiment of the present invention. FIGS. 2a-2g are schematic structural diagrams of a method of manufacturing a display panel according to an embodiment of the present invention. The present invention provides a method of manufacturing a display panel, including:

(11) Please refer to FIG. 2a, step S10, providing a substrate 11, sequentially forming a water-oxygen barrier layer 12, a buffer layer 13, an active layer 14, a first gate insulating layer 15, a first gate layer 16, a second gate insulating layer 17, a second gate layer 18, and an interlayer dielectric layer 19 on the substrate 11, to form a first substrate A including a display area a and a non-display area b.

(12) In one embodiment, the substrate 11 is a flexible substrate and the flexible substrate includes polyimide.

(13) In one embodiment, the step S10 includes: providing a substrate 11 on which a water-oxygen barrier layer 12 having a thickness of 5000 Å and a buffer layer 13 having a thickness of 3,500 Å are sequentially formed by a physical vapor deposition technique. A material of the buffer layer 13 includes at least one of silicon nitride and silicon oxide. An amorphous silicon layer having a thickness of 500 Å is formed on the buffer layer 13, and the amorphous silicon layer is subjected to a laser annealing process, exposure, development, and etching to form the active layer 14. A first gate insulating layer 15 having a thickness of 1000 Å is formed on the active layer 14 by a physical vapor deposition technique. A gate metal having a thickness of 2500 Å is formed on the first gate insulating layer 15 by a sputtering process, and the gate metal is exposed and etched to form the first gate layer 16. A second gate insulating layer 17 is formed on the first gate layer 16 by a physical vapor deposition technique, and a material of the second gate insulating layer 17 may include silicon nitride. A gate metal is formed on the second gate insulating layer 17 by a sputtering process, and the gate metal is subjected to exposure and etching to form a second gate layer 18. Subsequently, an interlayer dielectric layer 19 having a thickness of 5000 Å is formed on the second gate layer 18 by physical vapor deposition technique.

(14) Please refer to FIGS. 2b-2d, step S20, forming a first via hole 20 in the non-display area b of the first substrate A, forming a second via hole 21 in a display area a of the first substrate A, wherein the first via hole 20 is in contact with the substrate 11 and penetrates through all of the layers other than the substrate 11, and the second via hole 21 is in contact with the water-oxygen barrier layer 12 and penetrates through all of the layers other than the substrate 11 and the water-oxygen barrier layer 12.

(15) In one embodiment, the first via hole 20 includes superimposed first region 20a and second region 20b.

(16) In the first embodiment of the present invention, the step S20 includes:

(17) Please refer to FIG. 2b, step S201, performing a lithography process using a first photomask to form the first region 20a of the first via hole in the non-display area a of the first substrate A, wherein the first photomask has a pattern matching a pattern of the first region 20a of the first via hole;

(18) In one embodiment, the first region 20a of the first via hole is formed by a dry etch process.

(19) In one embodiment, the first region 20a of the first via hole has a target depth of 6,000 Å to 9000 Å.

(20) Please refer to FIG. 2c, step S202, performing a lithography process using a second photomask to form the second region 20b of the first via hole in the first via hole 20, thereby forming the first via hole 20, wherein the second photomask has a pattern matching a pattern of the second region 20b of the first via hole.

(21) In one embodiment, all the inorganic layers in the second region 20b of the first via hole are etched by dry etching to form the first via hole 20 in contact with the substrate 11. That is, the first via hole 20 is in contact with the substrate 11 and penetrates through all of the layers other than the substrate 11.

(22) Please refer to FIG. 2d, step S203, performing a lithography process using a third photomask to form the second via hole 20 in the display area of the first substrate A, wherein the third photomask has a pattern matching a pattern of the second via hole 21.

(23) In one embodiment, the second via hole 21 is disposed between the pixel units in the display area a and is separated from the functional devices in the display area, and the second via hole 21 is filled with a flexible material to mitigate the bending stress of the display panel when it is bent.

(24) In the second embodiment, referring to FIG. 3a-3b, the step S20 includes the following steps.

(25) Refer to FIG. 3a, step S201, forming a lithography process using the first photomask to form the first region 20a of the first via hole in the non-display area of the first substrate A, wherein the first photomask has a pattern matching a pattern of the first region 20a of the first via hole.

(26) Refer to FIG. 3b, performing a lithography process using a fourth photomask to form the second region 20b of the first via hole in the first region 20a of the first via hole, and forming the second via hole 21 in the display region of the first substrate A simultaneously, wherein the fourth photomask has a pattern matching a pattern of the second region 20b of the first via hole and a pattern of the second via hole 21. Compared with the first embodiment, the second embodiment uses one photomask to form the second region 20b of the first via hole hold and the second via hole 21, so that one photomask can be saved.

(27) Refer to FIG. 2e, step S30, filling the first via hole 20 and the second via hole 21 with a flexible material to form a flexible layer 2 in the first via hole 20 and a stress releasing unit 23 in the second via hole 21.

(28) In one embodiment, the flexible material is an organic material.

(29) Refer to FIG. 2f, step S40, forming a third via hole 24 in the display region a of the first substrate A, wherein the third via hole 24 is in contact with the active layer 14.

(30) In one embodiment, a target depth of the third via hole 24 may be the total thickness of the interlayer dielectric layer 19, the second gate insulating layer 17, and the first gate insulating layer 15.

(31) Refer to FIG. 2g, step S50, forming a metal layer 25 on the interlayer dielectric layer, wherein the third via hole 23 is filled with the metal layer 25.

(32) In one embodiment, the method of manufacturing a display panel further includes: forming a planarization layer, an anode layer, a pixel definition layer, and a support layer on the metal layer.

(33) According to another aspect of the present invention, a method of manufacturing a display panel is also provided. Referring to FIG. 4 and FIGS. 5a-5d, the method of manufacturing a display panel as shown includes the following steps.

(34) Refer to FIG. 5a, step S10, providing a substrate 11, sequentially forming a water-oxygen barrier layer 12, a buffer layer 13, an active layer 14, a first gate insulating layer 15, a first gate layer 16, a second gate insulating layer 17, a second gate layer 18, and an interlayer dielectric layer 19 on the substrate 11, to form a first substrate 21 including a display area a and a non-display area b.

(35) In one embodiment, the step S10 includes: providing a substrate 11 on which a water-oxygen barrier layer 12 having a thickness of 5000 Å and a buffer layer 13 having a thickness of 3,500 Å are sequentially formed by a physical vapor deposition technique. A material of the buffer layer 13 includes at least one of silicon nitride and silicon oxide. An amorphous silicon layer having a thickness of 500 Å is formed on the buffer layer 13, and the amorphous silicon layer is subjected to a laser annealing process, exposure, development, and etching to form the active layer 14. A first gate insulating layer 15 having a thickness of 1000 Å is formed on the active layer 14 by a physical vapor deposition technique. A gate metal having a thickness of 2500 Å is formed on the first gate insulating layer 15 by a sputtering process, and the gate metal is subjected to exposure and etching to form the first gate layer 16. A second gate insulating layer 17 is formed on the first gate layer 16 by a physical vapor deposition technique, and a material of the second gate insulating layer 17 may include silicon nitride. A gate metal is formed on the second gate insulating layer 17 by a sputtering process, and the gate metal is subjected to exposure and etching to form a second gate layer 18. Subsequently, an interlayer dielectric layer 19 having a thickness of 5000 Å is formed on the second gate layer 18 by physical vapor deposition technique.

(36) Please refer to FIGS. 5b-5c, step S20, forming a first via hole 20 in the non-display area b of the first substrate A, forming a second via hole 21 and a third via hole 24 in a display area a of the first substrate A, wherein the first via hole 20 is in contact with the substrate 11 and penetrates through all of the layers other than the substrate 11, and the second via hole 21 is in contact with the water-oxygen barrier layer 12 and penetrates through all of the layers other than the substrate 11 and the water-oxygen barrier layer 12, while the third via hole 24 is in contact with the active layer 14.

(37) In the third embodiment of the present invention, the step S20 includes the following steps.

(38) Refer to FIG. 2b, step S201, performing a lithography process using a first photomask to form the first region 20a of the first via hole in the non-display area a of the first substrate A, wherein the first photomask has a pattern matching a pattern of the first region 20a of the first via hole.

(39) Refer to FIG. 5c, step S202, performing a lithography process using a sixth photomask to form the second region 20b of the first via hole in the first region 20a the first via hole, and to form the second via hole 21 and the third via hole 24 in the display area a of the first substrate A simultaneously, wherein the sixth photomask has a pattern matching a pattern of the second region 20b of the first via hole, a pattern of the second via hole 21, and a pattern of the third via hole 24.

(40) Compared with the first embodiment, in the third embodiment, the second region 20b of the first via hole, the second via hole 21 and the third via hole 24 are prepared in the same photomask process, thus saving two photomask processes.

(41) In the fourth embodiment, the step S20 includes: performing a lithography process using a seventh photomask to form the first via hole 20, the second via hole 21 and the third via hole on the first substrate, wherein the seventh photomask has a pattern matching a pattern of the first via hole, a pattern of the second via hole, and a pattern of the third via hole.

(42) Referring to FIG. 6, compared with the first embodiment, in the fourth embodiment, the first via hole 20, the second via hole 21, and the third via hole 24 are all prepared by the same photomask process, thus saving three photomask processes, without formation of a step at the first via hole 21.

(43) Refer to FIG. 5c, step S30, filling the first via hole 20 and the second via hole 21 with a flexible material to form a flexible layer 22 in the first via hole 20 and a stress releasing unit 23 in the second via hole 21 respectively.

(44) Refer to FIG. 5d, step S40, forming a metal layer 25 on the interlayer dielectric layer 19, the metal layer 25 filing the third via hole 24.

(45) The first via hole 20, the second via hole 21, and the third via hole 24 are prepared by gas etching, and the etching gas includes hydrogen gas. The erosion of the active layer 14 is slowed down by introducing hydrogen gas into the etching gas.

(46) In one embodiment, the manner in which the metal layer 25 is in contact with the active layer 14 may be a surface contact or a side contact, depending on the depth of the third via hole 24.

(47) In one embodiment, the first via hole 20 includes the superimposed first region 20a and second region 20b.

(48) According to still another aspect of the present invention, a display panel is also provided. Referring to FIG. 7, the display panel includes a display area a and a non-display area b disposed at a periphery of the display area a. The display panel includes: a substrate 11, a water-oxygen barrier layer 12, a buffer layer 13, an active layer 14, a first gate insulating layer 15, a first gate layer 16, a second gate insulating layer 17, a second gate layer 18, and an interlayer dielectric layer 19 sequentially disposed; a metal layer 25 and a stress release unit 23 disposed in the display region a of the display panel; and a flexible layer 22 disposed in the non-display area b of the display panel;

(49) The metal layer 25 is disposed on the interlayer dielectric layer 19 and is in contact with the active layer 14 through a third via hole 24, the stress release unit 23 is disposed in the second via hole 21, and the flexible layer 22 is disposed in the first via hole 20, wherein the first via hole 20 is in contact with the substrate 11 and penetrates through all of the layers other than the substrate 11, and the second via hole 21 is in contact with the water-oxygen barrier layer 12 and penetrates through all of the layers other than the substrate 11 and the water-oxygen barrier layer 12.

(50) The present invention provides a display panel and a method of manufacturing the same, in which various approaches for preparing via holes in the display panel are proposed, such that different etching schemes can be selected according to actual needs during the process of preparing via holes of the display panel to reduce the number of times of the photomask used and to simply the manufacturing process of the display panel.

(51) While the invention has been described by way of example and in terms of the preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. To the contrary, it is intended to cover various modifications and similar arrangements. Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.