Device and Method for Generating a Dielectric Barrier Discharge
20230276561 · 2023-08-31
Inventors
- Stefan Nettesheim (Regensburg, DE)
- Robert Krumphals (Deutschlandsberg, AT)
- Johann Pichler (Breitenau Am Hochlan, AT)
- Markus Puff (Graz, AT)
Cpc classification
H05H2245/34
ELECTRICITY
H10N19/00
ELECTRICITY
H05H2245/36
ELECTRICITY
H05H1/2406
ELECTRICITY
International classification
Abstract
In an embodiment a device includes a thermoelectric component, an electrode arranged opposite the thermoelectric component and a high voltage source configured to generate a high voltage between the thermoelectric component and the electrode sufficient to ignite a dielectric barrier discharge.
Claims
1-33. (canceled)
34. A device for generating a dielectric barrier discharge, the device comprising: a thermoelectric component; an electrode arranged opposite the thermoelectric component; and a high voltage source configured to generate a high voltage between the thermoelectric component and the electrode sufficient to ignite the dielectric barrier discharge.
35. The device according to claim 34, wherein the thermoelectric component comprises two or more thermoelectric elements, and metal bridges connecting the thermoelectric elements, and wherein the thermoelectric component further comprises a first ceramic plate covering the metal bridges on an upper surface of the thermoelectric component facing the electrode, and a second ceramic plate covering the metal bridges at a bottom side of the thermoelectric component.
36. The device according to claim 35, wherein the first ceramic plate comprises aluminum oxide and/or aluminum nitride.
37. The device according to claim 35, wherein the first ceramic plate has an insulating region so that an electric field does not penetrate and/or a conductive region along which the electric field is guided.
38. The device according to claim 35, wherein the thermoelectric elements are arranged in a row, and wherein two thermoelectric elements adjacent to each other are connected to each other in a meandering manner on their upper side or on their lower side by a metal bridge.
39. The device according to claim 35, where the thermoelectric elements are arranged in a two-dimensional matrix structure, wherein the metal bridges connect the thermoelectric elements in a two-dimensional meander shape, and wherein thermoelectric elements adjacent to each other along the two-dimensional meander shape are connected to each other at their upper side or at their lower side by a metal bridge.
40. The device according to claim 35, wherein the metal bridges are each separated by a non-metallized surface, wherein a maximum extension of the non-metallized surfaces, between two adjacent metal bridges, is smaller than a thickness of the first ceramic plate.
41. The device according to claim 35, wherein the metal bridges and the first ceramic plate are dimensioned such that the following inequality is satisfied:
D>U.sub.ignition/U.sub.operation×ε.sub.2/ε.sub.1×A, and wherein D indicates a thickness of the first ceramic plate , U.sub.ignition indicates an ignition voltage above which plasma ignitions occur between the metal bridges, U.sub.operation indicates an operating voltage applied to the device, ε.sub.2 indicates a dielectric constant of the first ceramic plate, ε.sub.1 indicates a dielectric constant of air, and A indicates a distance from adjacent metal bridges.
42. The device according to claim 35, further comprising a weakly conductive layer disposed on an inner side of the first ceramic plate facing the metal bridges.
43. The device according to claim 42, wherein the weakly conductive layer is a layer deposited on the first ceramic plate using thin film technology.
44. The device according to claim 42, wherein the first ceramic plate has a multilayer structure, the weakly conductive layer being formed as a sublayer of the first ceramic plate.
45. The device according to claim 42, wherein the weakly conductive layer has a resistance that is greater by at least a factor of boo than a resistance of a meander-shaped connection of the thermoelectric elements via the metal bridges.
46. The device according to claim 42, wherein the weakly conductive layer comprises at least one conductive element comprising Cr or Ni, and/or at least one semiconductive element comprising B or Si, and/or at least one insulating material comprising SiO.sub.2 or Al.sub.2O.sub.3.
47. The device according to claim 35, further comprising a conductive structure, which is arranged between the second ceramic plate and the metal bridges arranged at bottom sides of the thermoelectric elements, and which is connected to ground potential.
48. The device according to claim 47, where the conductive structure is reticular.
49. The device according to claim 35, wherein the thermoelectric component is a Peltier element, and wherein the thermoelectric elements comprise a semiconductor material or semiconducting ceramic material.
50. The device according to claim 35, wherein the thermoelectric elements comprise a thermoelectric ceramic material.
51. The device according to claim 50, wherein the thermoelectric ceramic material comprises a calcium-manganese oxide being partially doped with Fe atoms at sites of Mn atoms, or wherein the thermoelectric ceramic material comprises a material described by the general formula Ca.sub.1-x-yISO.sub.xDON.sub.yMn.sub.1-zFe.sub.zO.sub.n, where ISO denotes a divalent element capable of replacing Ca.sup.2+ in a crystal lattice, DON denotes an element that is able to replace Ca.sup.2+ in a crystal lattice and provides electrons for electrical conductivity, and where 0≤x≤0.5, 0<y≤0.5, 0.0001≤z<0.2, n≥2, or wherein the thermoelectric ceramic material comprises a material based on the composition (Ca.sub.3-xNa.sub.x)Co.sub.4O.sub.9-δ, with 0.1≤x≤2.9 and 0<δ≤2.
52. The device according to claim 34, wherein the high voltage source is configured to apply a high voltage alternating potential to the electrode, and wherein the device comprises a DC voltage source configured to apply a low DC voltage to the thermoelectric component.
53. The device according to claim 34, wherein the device is configured to ignite the dielectric barrier discharge as a volume discharge between the thermoelectric component and the electrode.
54. The device according to claim 34, wherein the thermoelectric component has a metallization on a surface facing the electrode, wherein the high voltage source is configured to apply a high voltage potential to the thermoelectric component.
55. The device according to claim 54, wherein the metallization consists of a conductive material and/or of a semiconductive material comprising a mixture of bismuth and rhodium.
56. The device according to claim 54, wherein the metallization consists of a Mo/Mn paste baked in a hydrogen atmosphere or a W paste mixed with oxide coupling agents.
57. The device according to claim 54, wherein the device is configured to ignite the dielectric barrier discharge as a surface discharge on the metallization.
58. The device according to claim 34, wherein the thermoelectric component is configured to cool a process gas or heat the process gas, and/or wherein the thermoelectric component is configured to continuously change a temperature of the process gas in an operating cycle.
59. The device according to claim 34, wherein the electrode and/or the thermoelectric component are coated with a glassy layer.
60. The device according to claim 34, wherein an area of the thermoelectric component is larger than an area of the electrode.
61. The device according to claim 34, further comprising a controller configured to: operate the device in a cooling mode in which no dielectric barrier discharge is initiated and a surface of the device is cooled below a dew point of a process gas so that a water film is generated on the surface by condensation, and subsequently operate the device in a discharging mode in which the dielectric barrier discharge is generated on the water film.
62. The device according to claim 34, further comprising a controller configured to operate in a heating mode in which no dielectric barrier discharge is initiated and a surface of the device is heated to a temperature greater than 100° C.
63. The device according to claim 34, further comprising at least one sensor selected from a temperature sensor, an ozone sensor, or a humidity sensor, wherein the device is configured to adjust a power of the thermoelectric component and/or a power of the high voltage source taking into account a measurement of the at least one sensor.
64. The device according to claim 34, wherein the electrode is separately replaceable and/or wherein the thermoelectric component is separately replaceable.
65. An appliance comprising: the device according to claim 34, wherein the appliance is a refrigerator, a cool box, an air conditioner, a cooling device, a disinfector, a clothes dryer, a packaging appliance, a food processing appliance, a room decontamination appliance, a textile parasite control appliance, a waste collector or a small sterilizer.
66. A method for generating the dielectric barrier discharge with the device according to claim 34, the method comprising: generating, by the high voltage source, the high voltage between the thermoelectric component and the electrode; and igniting the dielectric barrier discharge.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0083] In the following, preferred embodiments of the present invention are explained in more detail with reference to the figures.
[0084]
[0085]
[0086]
[0087]
[0088]
[0089]
[0090]
[0091]
DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS
[0092]
[0093] The thermoelectric component 1 is an electrothermal transducer. It is designed to change a temperature of a process gas. If a DC voltage is applied to the thermoelectric component 1 and a DC current flows via the thermoelectric component 1, a temperature difference is generated based on the Peltier effect or the Seeback effect or the Thomson effect. The Peltier element 1 can be used both for cooling and - when the current direction is reversed—for heating the process gas.
[0094] The thermoelectric component 1 has thermoelectric elements 3 interconnected by metal bridges 4 to form a meandering structure.
[0095] If the thermoelectric component 1 is a Peltier element, semiconductor elements, in particular semiconducting ceramic plates, are used as thermoelectric elements. In this case, the semiconductor elements are connected in series with one another by the metal bridges 4, with p-doped semiconductor elements and n-doped semiconductor elements alternating. The semiconductor elements may, for example, comprise bismuth telluride or silicon germanium.
[0096] When a direct current is passed through the thermoelectric component 1, heat or cold is generated at the metal bridges 4 due to the thermoelectric effect, for example the Peltier effect.
[0097] The thermoelectric component 1 has a first ceramic plate 5a and a second ceramic plate 5b. The first ceramic plate 5a is arranged on an upper side facing the electrode. The second ceramic plate 5b is arranged on a lower side facing away from the electrode.
[0098] The ceramic plates 5a, 5b may have aluminum oxide or consist of aluminum oxide. Alternatively or complementarily, the ceramic plates 5a, 5b may comprise aluminum nitride or consist of aluminum nitride. The ceramic plates 5a, 5b may have a multilayer structure comprising a layer of aluminum oxide and a layer of aluminum nitride. Aluminum nitride exhibits the advantage of high thermal conductivity. Aluminum oxide exhibits high corrosion resistance. A multilayer structure of the ceramic plates 5a, 5b may have an outermost layer of aluminum oxide as a corrosion-resistant protective layer.
[0099] The ceramic plates 5a, 5b cover the metal bridges 4. In the example shown in
[0100] The electrode 2 is arranged parallel to one of the first ceramic plates 5a. The electrode 2 faces the thermoelectric component 1 and is thereby spatially separated from the thermoelectric component 1. There is a gap 6 between the electrode 2 and the thermoelectric component 1. The gap 6 between the thermoelectric component 1 and the electrode 2 can have a width between 0.01 mm and 1.0 mm, preferably between 0.05 mm and 0.5 mm.
[0101] The device is designed to trigger a dielectric barrier discharge between the electrode 2 and the thermoelectric component 1. The dielectric barrier discharge is an ignition of a non-thermal atmospheric pressure plasma.
[0102] An alternating voltage potential with a high amplitude is applied to electrode 2 with reference to an electric potential of thermoelectric component 1. A high voltage is thus generated between the thermoelectric component 1 and the electrode 2. A dielectric barrier discharge is ignited between the thermoelectric component 1 and the electrode 2, with the ceramic plate 5 facing the electrode 1 acting as a dielectric barrier.
[0103] A direct current flows through the thermoelectric component 1. A DC potential difference through the low-resistance thermoelectric elements 3 of the thermoelectric component 1 is negligible in relation to the high voltage required for the dielectric barrier discharge. Conversely, the current density typically encountered during dielectric barrier discharge is small relative to the DC current flowing through the thermoelectric elements 3. Accordingly, the cooling function of the thermoelectric component 1 and the discharge function of the device do not negatively affect each other.
[0104] Thermoelectric element 1 is used in the device both in its function as a cooling or heating element that sets a temperature of the process gas, and as a counter electrode that triggers the dielectric barrier discharge together with electrode 2. By combining the thermoelectric element 1 with the dielectric barrier discharge, the dielectric barrier discharge can be operated at a precisely set temperature and humidity, and the concentration and composition of active species produced in the dielectric barrier discharge can be set and kept stable.
[0105] The thermoelectric element 1 makes it possible to control a temperature of the process gas located in the gap 6 between the electrode 2 and the thermoelectric element 1. When a thermoelectric element 1 is used for dielectric barrier discharge, it is possible to precisely adjust the temperature of the process gas during discharge. The gas composition of the gases generated in the dielectric barrier discharge when air is used as the process gas depends very much on the temperature of the air. In particular, the proportions of generated ozone (O.sub.3) and generated nitrous gases (NO, NO.sub.2, NO.sub.x) are determined by the temperature. With increasing temperature, the generation of nitrous gases is favored and the ozone decomposition mechanisms in favor of nitrous gases are accelerated.
[0106] The device can be operated in different modes. A first operating mode is a pure cooling mode, in which the thermoelectric element 1 cools the process gas and no high voltage is generated between the thermoelectric element and the electrode 2. If the process gas is cooled below its dew point in this process, water is formed by condensation and settles as a water film on a surface of the thermoelectric element 1.
[0107] A second mode of operation of the device is a discharge mode. In the discharge mode, a high voltage is applied between the thermoelectric element 1 and the electrode 2, and a dielectric barrier discharge is initiated between the electrode 2 and the thermoelectric element 1. In addition, the thermoelectric element 1 can simultaneously cool or heat the process gas.
[0108] The discharging mode may immediately follow the cooling mode, wherein a water film has been generated on a surface of the thermoelectric element 1 in the cooling mode. In this case, the dielectric barrier discharge is generated on the water film. In particular, peroxide species are generated and ozone emission is low.
[0109] A third mode of operation of the device is a heating mode. In the heating mode, no high voltage is applied between the thermoelectric element 1 and the electrode 2 and the thermoelectric element 1 heats the process gas. In this case, the thermoelectric element 1 can reach a temperature of more than 100° C. At such high temperatures, ozone is decomposed. If the thermoelectric element 1 is operated in its heating mode following the discharge mode, an ozone concentration built up in an effective volume by the dielectric barrier discharge can be quickly reduced to a low level again. The device can be operated so that cooling mode, discharging mode, and heating mode are repeated sequentially in a predetermined time sequence.
[0110] The thermoelectric element 1 can be operated in the discharge mode in such a way that it continuously heats or cools the process gas over a wide temperature range. Thereby, a dielectric barrier discharge can be triggered continuously while the process gas undergoes a continuous transition from a low temperature to a high temperature. In this way, the entire spectrum of species from ROS (Reactive Oxygen Species) to RNS (Reactive Nitrogen Species) can be generated. This can be used, for example, to effect thorough disinfection.
[0111] By heating and/or cooling the process gas, the thermoelectric element 1 can also control the humidity of the process gas. For example, moisture can be condensed out of the process gas in a cooling process. The humidity of the process gas affects the composition of the gases produced during the dielectric barrier discharge. For example, the presence of humidity can lead to the generation of peroxide H.sub.2O.sub.2.
[0112] The area of the thermoelectric element 1 is larger than the area of the opposite electrode 2. The thermoelectric element 1 has a first area 7 in which the electrode 2 is not directly opposite the thermoelectric element 1. The process gas may first be directed across the first region 7 of the thermoelectric element 1 in which the electrode 2 does not directly oppose the thermoelectric element 1, and then the process gas may be directed into a discharge region 8 in which the electrode 2 opposes the thermoelectric element 1 and in which the dielectric barrier discharge is ignited. This allows the thermoelectric element 1 in the first area 7 to cool the process gas before the dielectric barrier discharge occurs. In this way, active condensation of moisture from the process gas is achieved even before the dielectric barrier discharge. The process gas dried in this way can then reach the discharge area. If the process gas is dried outside the discharge area before the dielectric barrier discharge, a higher ozone concentration is achieved during the dielectric barrier discharge compared to a process gas that was not dried beforehand.
[0113]
[0114] In
[0115] Furthermore, the device may alternatively or additionally comprise a fan that supports a flow of the process gas along the thermoelectric element 1.
[0116] In the embodiments shown in
[0117] In the third embodiment, a weakly conductive layer 10 is disposed between the metal bridges 4 and the first ceramic plate 5a. The weakly conductive layer 10 can compensate for potential differences between the island-shaped metallizations. It has a resistance that is high-resistance compared to the internal resistance of the meander-shaped junction formed by the thermoelectric elements 3 and the metal bridges 4. For example, the resistance of the weakly conductive layer 10 may be more than one hundred times the resistance of the meander-shaped junction. Accordingly, a current flowing through the thermoelectric component does not flow through the weakly conductive layer, but through the metal bridges 4 and the thermoelectric elements 3. Thus, the weakly conductive layer 10 does not interfere with the cooling or heating function of the thermoelectric component 1.
[0118] The conductivity of the weakly conductive layer 10 is sufficient for the thermoelectric component 1 to act as a two-dimensional counter-electrode during the dielectric barrier discharge and to prevent an inhomogeneous discharge. In addition, the metal bridges 4 are connected to each other via the weakly conductive layer 10 in such a way that parasitic discharges do not occur at the metal bridges 4. The weakly conductive layer 10 thus makes it possible to overcome the undesirable side effects from the first two embodiments.
[0119] In the embodiment shown in
[0120]
[0121]
[0122] Also in this embodiment, a weakly conductive layer 10 may be disposed between the first ceramic plate 5a and the metal bridges 4. A surface of the first ceramic plate 5a is provided with a metallization 13. This metallization 13 acts as an electrode. A high voltage potential can be applied to the metallization 13. The entire thermoelectric component 1 is applied to a high AC voltage potential. Together with the thermoelectric component 1, the planar electrode 2 acts, which can be at a ground potential. It is sufficient to trigger a dielectric barrier discharge if the electrode 2 has a sufficiently high capacitance.
[0123] The metallization 13 has recesses in which the first ceramic plate 5a is not covered by the metallization 13. The dielectric barrier discharge is ignited as an area discharge in the recesses.
[0124] In the embodiment shown in
[0125]
[0126] The high-voltage source 12 applies a high-voltage alternating potential to the thermoelectric component 1. The DC voltage source 11 is also at the high-voltage alternating potential applied by the high-voltage source 12.
[0127] The electrode 2 is at a ground potential. It is not connected to the high voltage source 12. A high voltage is generated between the electrode 2 and the metallization 13 of the thermoelectric component 1, which triggers the ignition of the dielectric discharge as a surface discharge at the metallization 13 of the thermoelectric component 1.
[0128]
[0129] In the embodiment shown in
[0130] A plate of indium tin oxide (ITO) is used as electrode 2 in the embodiment shown in
[0131] The high voltage source 12 applies an AC voltage between the thermoelectric component 1 and the plate of indium tin oxide.
[0132] The metal bridges 4 are arranged in an island shape on the first ceramic plate 5a and each connect two thermoelectric elements to each other. Two adjacent metal bridges 4 are separated from each other by a non-metallized surface.
[0133] The result is a structured firing pattern which follows the position pattern of the metal bridges 4. The firing pattern is composed of individual firing spots. The area of the firing spots is larger than the area of the respective metal bridge.
[0134] An ignition voltage for igniting a dielectric barrier discharge between the thermoelectric component 1 and the electrode 2 is lower for the embodiment shown in
[0135] The embodiment results in high ozone generation.
[0136] At the points of the firing pattern where the highest discharge density is present, the cooling power of the thermoelectric component 1 is also highest. This results in a device in which the cooling power density of the thermoelectric component always matches the heat generation that occurs during the dielectric discharge.
[0137] Figure ii shows a cross-section through a section of the device shown in
[0138] In the embodiment shown in
[0139] A higher field strength is present in the gap 6, which can be greater than 2 kV/mm, for example. A dielectric barrier discharge is therefore ignited in the gap.
[0140] Based on the course of the isopotential lines, it can be seen that the thickness of the first ceramic plate 5a and the distance between two adjacent metal bridges 4 significantly influence the field strength on the inside of the first ceramic plate. To avoid parasitic discharges, the distance between adjacent metal bridges 4 must not be too high. In particular, the following inequality must be satisfied to avoid parasitic discharges:
D>U.sub.ignition/U.sub.operation×ε.sub.2/ε.sub.1×A,
[0141] where D indicates the thickness of the first ceramic plate. U.sub.ignition specifies an ignition voltage above which plasma ignitions occur between the metal bridges. U.sub.operation specifies an operating voltage applied to the device. ε.sub.2 indicates a dielectric constant of the first ceramic plate. ε.sub.1 indicates a dielectric constant of air and A indicates a distance from adjacent metal bridges.
[0142] By appropriately dimensioning the metal bridges 4, parasitic discharges can be excluded even in a device that does not have a weakly conductive layer 10 between the metal bridges 4 and the first ceramic plate 5a.
[0143] Furthermore, in each of the embodiments shown in
[0144] Instead of a single-stage thermoelectric component 1, several thermoelectric components can also be combined to form a multi-stage thermoelectric component in order to achieve a higher temperature difference.
[0145] The operating modes described above, discharge mode, cooling mode, and heating mode, may be used in any of the four embodiments shown.
[0146] As a thermoelectric component, a thermoelectric component comprising thermoelectric elements made of a thermoelectric ceramic material can be used as an alternative to a Peltier element.