STRUCTURE OF SURFACE ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME

Abstract

A surface acoustic wave (SAW) device including a substrate is provided. Multiple surface acoustic wave elements are disposed on the substrate. A conductive surrounding structure includes: a wall part, disposed on the substrate and surrounding the surface acoustic wave elements; and a lateral layer part, disposed on the wall part. The lateral layer part has an opening above the surface acoustic wave elements. A cap layer covers the lateral layer part and closes the opening.

Claims

1. A surface acoustic wave device, comprising: a substrate; a plurality of surface acoustic wave members, disposed on the substrate; a conductive surrounding structure, comprising: a wall part, disposed on the substrate and surrounding the surface acoustic wave members; and a lateral layer part, disposed on the wall part, wherein the lateral layer part comprises an opening above the surface acoustic wave members; and a cap layer, adapted to cover the lateral layer part and close the opening.

2. The surface acoustic wave device according to claim 1 wherein the cap layer is a solder layer.

3. The surface acoustic wave device according to claim 2, wherein the cap layer is only on top of the lateral layer part.

4. The surface acoustic wave device according to claim 2, wherein the cap layer is a reflow solder layer adapted for closing the opening of the lateral layer part.

5. The surface acoustic wave device according to claim 1, wherein the conductive surrounding structure is metal, and the cap layer is solder.

6. The surface acoustic wave device according to claim 5, wherein the conductive surrounding structure comprises copper or electroplating material.

7. The surface acoustic wave device according to claim 1, wherein the cap layer is a molded plastic structure.

8. The surface acoustic wave device according to claim 7, wherein the molded plastic structure also covers an outer sidewall of the conductive surrounding structure and is provided on the substrate.

9. The surface acoustic wave device according to claim 7, wherein the cap layer is an epoxy resin cap and closes the opening of the lateral layer part.

10. The surface acoustic wave device according to claim 1, wherein the conductive surrounding structure is metal, and the cap layer is epoxy resin material.

11. The surface acoustic wave device according to claim 10, wherein the conductive surrounding structure comprises copper or electroplating material.

12. A surface acoustic wave device fabricating method, comprising: providing a substrate; forming a plurality of surface acoustic wave members on the substrate; forming a sacrificial layer for covering the surface acoustic wave members, wherein the sacrificial layer comprises a surrounding trench for exposing the substrate and surrounding the surface acoustic wave members; performing an electroplating process for forming a conductive surrounding structure in the surrounding trench on an exposed surface of the substrate, wherein the conductive surrounding structure comprises a lateral layer part provided on the sacrificial layer, and the lateral layer part comprises an opening above the surface acoustic wave members; and forming a cap layer for covering the lateral layer part and closing the opening.

13. The surface acoustic wave device fabricating method according to claim 12, wherein the conductive surrounding structure comprises electroplated metal.

14. The surface acoustic wave device fabricating method according to claim 12, wherein the conductive surrounding structure comprises copper or electroplating material.

15. The surface acoustic wave device fabricating method according to claim 12, wherein forming the cap layer comprises: forming a solder layer on the lateral layer part of the conductive surrounding structure; removing the sacrificial layer; and performing a reflow process on the solder layer, wherein the opening of the lateral layer part is also closed.

16. The surface acoustic wave device fabricating method according to claim 15, wherein the solder layer is electroplated on the lateral layer part of the conductive surrounding structure before performing the reflow process.

17. The surface acoustic wave device fabricating method according to claim 12, wherein forming the cap layer comprises: removing the sacrificial layer; and forming a molded plastic structure and covering the lateral layer part, for acting as the cap layer, wherein the opening is closed.

18. The surface acoustic wave device fabricating method according to claim 17, wherein the molded plastic structure also covers an outer sidewall of the conductive surrounding structure and is provided on the substrate.

19. The surface acoustic wave device fabricating method according to claim 17, wherein the molded plastic structure comprises epoxy resin.

20. The surface acoustic wave device fabricating method according to claim 17, wherein the conductive surrounding structure comprises copper or electroplating material.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings are included to provide a further understanding of the present disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and, together with the description, serve to explain the principles of the embodiment.

[0030] FIG. 1 is a schematic view of a structure of a surface acoustic wave device looked into according to an embodiment of the present disclosure.

[0031] FIG. 2A to FIG. 2F are schematic cross-sectional views of a fabricating process of a surface acoustic wave device according to an embodiment of the present disclosure.

[0032] FIG. 3A to FIG. 3C are schematic cross-sectional views of a fabricating process of a surface acoustic wave device according to an embodiment of the present disclosure.

DESCRIPTION OF THE EMBODIMENTS

[0033] The present disclosure relates to a surface acoustic wave device and a fabricating method thereof, which at least exclude the use of materials with weak moisture resistance, such as polyimide, in the subsequent packaging process to protect IDT members and to prevent oxidation effectively. The surface acoustic wave device fabricating method proposed by the present disclosure allows the use of metal materials to protect the IDT member, meeting the requirements of preventing oxidation effectively.

[0034] Some embodiments are illustrated in the following to describe the present disclosure. Suitable combinations are also allowed between these embodiments.

[0035] Before bring forth the surface acoustic wave device and the fabricating method thereof, the present disclosure looks into the general structure of the surface acoustic wave device in order to at least prevent the oxidation of the IDT member of the surface acoustic wave device effectively.

[0036] FIG. 1 is a schematic view of a structure of a surface acoustic wave device looked into according to an embodiment of the present disclosure. In FIG. 1, the structure of the surface acoustic wave device is to form a metal layer 52 on a substrate 50, and the metal layer may be, for example, copper or aluminum. A sensing area 52a of the metal layer 52 forms a plurality of IDT cells through a defined process. In addition, to complete the overall structure of the surface acoustic wave device, further elements, for example, includes another metal layer 54 formed on the metal layer 52. Some device regions of the metal layer 52 are separated from the sensing area 52a by using an inter-metal dielectric (IMD) layer 56. And the inter-metal dielectric layer 56 covers the metal layer 52 that is within this region. Thereafter, surrounding walls 58 and a top layer 60 of PI material are adapted to form a cap structure to protect a plurality of IDT members in the sensing area 52a.

[0037] After looking into the structure of the surface acoustic wave device in the present disclosure, it is observed that the moisture resistance of the PI material may be insufficient. For example, the oxidation of the IDT members may not be effectively prevented under an environment of high humidity or high temperature. The disclosure proposes a structure for protecting an IDT member and a fabricating method thereof.

[0038] FIG. 2A to FIG. 2F are schematic cross-sectional views of a fabricating process of a surface acoustic wave device according to an embodiment of the present disclosure. In FIG. 2A, a plurality of surface acoustic wave members 102 are formed on a substrate 100 to form a sensing group to sense acoustic waves. The two surface acoustic wave members 102 in FIG. 2A are only shown as an example for illustration. In one embodiment, the surface acoustic wave member 102 may be function as, for example, an IDT member.

[0039] In FIG. 2B, a sacrificial layer 104 is formed on the substrate 100 and covers the surface acoustic wave members 102. The sacrificial layer 104 is, for example, a photoresist, or other materials that can be removed in a subsequent process. The sacrificial layer 104 has a surrounding trench 106, adapted to surround the protected surface acoustic wave members 102. When the sacrificial layer 104 is made of a photoresist material, it can be completed by, for example, a photolithography process, and the photoresist material may be easily completely removed then.

[0040] Part of the surface of the substrate 100 is exposed from the surrounding trench 106. In FIG. 2C, in one embodiment, the present disclosure performs, for example, an electroplating process to form a conductive surrounding structure 108 on the exposed surface of the substrate 100. The conductive surrounding structure 108 is copper, other adaptable metals, or electroplating materials. The material of the conductive surrounding structure 108 is not limited to the listed embodiments.

[0041] The conductive surrounding structure 108 forms a wall part 108a in the surrounding trench 106 of the sacrificial layer 104, and then continues to form a lateral layer part 108b on the top surface of the sacrificial layer 104. Although the conductive surrounding structure 108 is an integrated electroplating structure, from the perspective of structural details, the lateral layer part 108b is on the wall part 108a. The wall part 108a and the lateral layer part 108b constitute the conductive surrounding structure 108.

[0042] Here, the lateral layer part 108b has an opening 110 above the surface acoustic wave members 102. In other words, the lateral layer part 108b does not completely cover. The opening 110 can be adapted for subsequent processes to remove the sacrificial layer 104 within the zone.

[0043] In FIG. 2D, a solder layer 112 is formed on the lateral layer part 108b. Solder layer(s) may continue to be electroplated on the lateral layer part 108b as an example, but the disclosure is not limited thereto. Here, the solder layer 112 also has an opening 112a communicating with the opening 110, and the sacrificial layer 104 remains exposed.

[0044] In FIG. 2E, the sacrificial layer 104 is removed by the corresponding process based on the material used for the sacrificial layer 104. For example, if the sacrificial layer 104 is a photoresist material, it is removed by using an ashing process. Since the opening 112a communicates with the opening 110, the sacrificial layer 104 where it covers the surface acoustic wave members 102 is also removed. This way, the surface acoustic wave member 102 may sense surface acoustic waves in the released space completely.

[0045] In FIG. 2F, the surface acoustic wave members 102 are in need of protection, as in dust-proof and moisture-proof. In one embodiment, a solder layer 112 may be formed by adapting the reflow process to melt then solidify the solder layer 112 to form an integrated solder layer 112, which naturally covers the opening 110 of the lateral layer part 108b, achieving the closing effect. The solder layer 112 is adapted as a cap structure to close the opening 110. However, the formation of the cap structure is not limited to the embodiments, such as the description of FIG. 3A to FIG. 3C recited later. The cap structure of the present disclosure is adapted to enclose the conductive surrounding structure 108, and it is limited to the illustrated embodiments.

[0046] In addition, in order to enable the solder layer 112 to close the opening 110 of the lateral layer part 108b after the reflow process, the sizes of the opening 110 and the opening 112a can be appropriately controlled in advance.

[0047] Here, the metal conductive surrounding structure 108 is combined with the solder layer 112, constructing a space above the surface acoustic wave members 102 and protecting the surface acoustic wave members 102 effectively.

[0048] FIG. 3A to FIG. 3C are schematic cross-sectional views of a fabricating process of a surface acoustic wave device according to an embodiment of the present disclosure. In FIG. 3A, as it is shown in FIG. 2A, a plurality of surface acoustic wave members 102 are first formed on a substrate 100.

[0049] In FIG. 3B, adopting the fabricating process shown in FIG. 2B and FIG. 2C, a conductive surrounding structure 108 is formed on the substrate 100 first, and then a sacrificial layer 104 is removed. The surface acoustic wave members 102 are exposed in this structural state.

[0050] In FIG. 3C, in an embodiment, for example, a packaging process is adopted to cover a molded plastic structure 120 on the conductive surrounding structure 108, and the process includes covering the top of the conductive surrounding structure 108 and also covering the outer sidewall of the conductive surrounding structure 108, whose bottom is on the substrate 100. The molded plastic structure 120 may also be regarded as a cap structure, which closes the opening 110 of the lateral layer part 108b of the conductive surrounding structure 108 to achieve a more comprehensive protection.

[0051] The present disclosure proposes that the fabricating method of the surface acoustic wave device allows the use of metal materials to form a protective structure to protect the surface acoustic wave member, which at least meet the requirements of preventing oxidation effectively.

[0052] Lastly, the above embodiments are only used to illustrate the technical solutions of the disclosure without limiting the disclosure; although the disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they may still recombine or modify the technical solutions described in each of the foregoing embodiments, or substitute some or all of the technical features with their equivalence; and the entities of those corresponding technical solutions with such combinations, modifications, or substitutions do not deviate from the scope of the technical solutions of the embodiments of the disclosure.