Preparation of nanoparticle materials
11339327 · 2022-05-24
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GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
A method of producing nanoparticles comprises effecting conversion of a molecular cluster compound to the material of the nanoparticles. The molecular cluster compound comprises a first ion and a second ion to be incorporated into the growing nanoparticles. The conversion can be effected in the presence of a second molecular cluster compound comprising a third ion and a fourth ion to be incorporated into the growing nanoparticles, under conditions permitting seeding and growth of the nanoparticles via consumption of a first molecular cluster compound.
Claims
1. A composition of matter comprising a semiconductor nanoparticle, the semiconductor nanoparticle comprising: a molecular cluster compound; and a core semiconductor material disposed on the molecular cluster compound, the core semiconductor material having: a Group 13 element; and a Group 15 element or a Group 16 element.
2. The composition of claim 1, wherein the Group 13 element is indium (In) and the Group 15 element is phosphorus (P).
3. The composition of claim 1, wherein the molecular cluster compound includes a Group 12 element and a Group 16 element.
4. The composition of claim 3, wherein the Group 12 element is zinc (Zn) and the Group 16 element is sulfur (S) or selenium (Se).
5. The composition of claim 1, wherein the semiconductor nanoparticle further comprises a first inorganic layer on the core semiconductor material.
6. The composition of claim 5, wherein the first inorganic layer includes a Group 13 element and a Group 16 element.
7. The composition of claim 5, wherein the first inorganic layer includes a Group 12 element and a Group 16 element.
8. The composition of claim 5, wherein the first inorganic layer comprises a ternary or quaternary semiconductor material.
9. The composition of claim 5, wherein the semiconductor nanoparticle further comprises a second inorganic layer on the first inorganic layer.
10. The composition of claim 9, wherein the second inorganic layer includes a Group 12 element and a Group 16 element.
11. The composition of claim 9, wherein the second inorganic layer comprises a ternary or quaternary semiconductor material.
12. The composition of claim 1, wherein the semiconductor nanoparticle further comprises one or more inorganic layers on the core semiconductor material.
13. The composition of claim 12, wherein at least one of the one or more inorganic layers includes a Group 13 element and a Group 16 element.
14. The composition of claim 12, wherein at least one of the one or more inorganic layers includes a Group 12 element and a Group 16 element.
15. The composition of claim 12, wherein at least one of the one or more inorganic layers is a ternary or quaternary semiconductor material.
16. The composition of claim 12, wherein the semiconductor nanoparticle further comprises a capping agent coordinated to a surface of the semiconductor nanoparticle.
17. The composition of claim 1, wherein the semiconductor nanoparticle further comprises a capping agent coordinated to a surface of the semiconductor nanoparticle.
18. The composition of claim 1, wherein the core semiconductor material further comprises a dopant.
19. The composition of claim 1, wherein the molecular cluster compound and the core semiconductor material each include at least one element in common.
20. The composition of claim 1, wherein the molecular cluster compound is selected from the group consisting of [EtGaNEt].sub.6; [MeGaN(4-C.sub.6H.sub.4F)].sub.6; (MeGaNiBu).sub.6; [RAlNR′].sub.4 (R=Me, CH.sub.2.sup.iPr, Ph and R′=.sup.iPr, CH.sub.2.sup.iPr, C.sub.6H.sub.2Me.sub.3); [(Si.sup.iPr.sub.3).sub.3AsAlH].sub.6; [.sup.iPrNAlH].sub.4; [RAlNR′].sub.6 (R=Me, Et, Cl, CH.sub.2Ph, CH.sub.2.sup.iPr, Ph and R′=Me, H, Br, C═CPh, .sup.iPr, (CH.sub.2).sub.2Me, (CH.sub.2).sub.2NMe.sub.2, SiPh.sub.3), [CH.sub.3GaNCH.sub.2CH(CH.sub.3).sub.2].sub.6; [MeGaN.sup.iBu].sub.6; [RGANR′].sub.4 (R=Ph, Me and R′=Ph, C.sub.6F.sub.5, SiMe.sub.3, .sup.tBu), [RGaPR′].sub.4 (R=.sup.iPr, C.sub.6H.sub.2Me.sub.3 and R′=.sup.tBu, C.sub.6H.sub.2Me.sub.3), [RNInR′].sub.4 (R═Cl, Br, I, Me and R′=.sup.tBu, C.sub.6F.sub.5, C.sub.6H.sub.4F), [RInPR′].sub.4 (R=.sup.iPr, C.sub.6H.sub.2Me.sub.3, Et and R′=SiPh.sub.3, C.sub.6H.sub.2Me.sub.3, Si.sup.iPr.sub.3), and [RInPR′].sub.6 (R=Et and R′=SiMe.sub.2(CMe.sub.2.sup.iPr)).
Description
(1) The present invention is illustrated with reference to the following non-limiting Examples and accompanying figures, in which:
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EXAMPLES
(16) All syntheses and manipulations were carried out under a dry oxygen-free argon or nitrogen atmosphere using standard Schlenk or glove box techniques. All solvents were distilled from appropriate drying agents prior to use (Na/K-benzophenone for THF, Et.sub.2O, toluene, hexanes and pentane). HDA, octylamine, TOP, Cd(CH.sub.3CO.sub.2).sub.2, selenium powder, CdO, CdCO.sub.3 (Aldrich) were procured commercially and used without further purification.
(17) UV-vis absorption spectra were measured on a Heiosβ Thermospectronic. Photoluminescence (PL) spectra were measured with a Fluorolog-3 (FL3-22) photo spectrometer at the excitation wavelength 380 nm. Powder X-Ray diffraction (PXRD) measurements were performed on a Bruker AXS D8 diffractometer using monochromated Cu-K.sub.α radiation.
(18) For all methods all capping agent solutions were dried and degassed before use by heating the mixture to 120° C. under a dynamic vacuum for at least 1 hour. The reaction mixture was then cooled to the desired temperature for that particular reaction before any seeding agent or growth precursors were added to the solution.
(19) Cluster Preparation
(20) Preparation of [HNEt.sub.3].sub.2[Cd.sub.4(SPh).sub.10]
(21) To a stirred methanol (60 ml) solution of benzenethiol (20.00 g, 182 mmol) and triethylamine (18.50 g, 182 mmoL) was added dropwise Cd(NO.sub.3).sub.24H.sub.2O (21.00 g, 68.00 mmol) that had previously been dissolved in methanol (60 mL). The solution was then allowed to stir while warming until the precipitate had completely dissolved to leave a clear solution. This was then place at 5° C. for 24 h in which time large colourless crystals of [HNEt.sub.3].sub.2[Cd.sub.4(SPh).sub.10] had formed. FW=1745.85. Anal. Calcu for C.sub.72H.sub.82N.sub.2S.sub.10Cd.sub.4 C=49.53, H=4.70, N=1.61, S=18.37, Cd=25.75%; Found C=49.73, H=4.88, N=1.59, S=17.92%
(22) Preparation of [HNEt.sub.3].sub.4[Cd.sub.10(SPh).sub.16]
(23) This was by a similar procedure to that described by Dance et al.sup.36. To a stirred acetonitrile (100 ml) solution of [HNEt.sub.3].sub.2[Cd.sub.4(SPh).sub.10] (80.00 g, 45.58 mmol) was added 3.57 g 45.21 mmol of selenium powder, the resulting slurry was left to stir for 12 hours, this produced a white precipitate. A further 750 ml of acetonitrile was added and the solution warmed to 75° C. to give a clear pale yellow solution which was allowed to cool to 5° C., yielding large colourless crystals. The crystals were washed in hexane and recrystallized from hot acetonitrile. To give 22.50 g of [HNEt.sub.3].sub.4[Cd.sub.10Se.sub.4(SPh).sub.16]. FW=3595.19 Anal. Calc for C.sub.120H.sub.144N.sub.4Se.sub.4S.sub.16Cd.sub.10. C=40.08, H=4.00, N=1.56, S=14.27, Se=8.78, Cd=31.26%. Found C=40.04, H=4.03, N=1.48, S=14.22, Cd=31.20%.
Example 1
Preparation of CdSe Nanoparticles from [Et.SUB.3.NH].SUB.4.[Cd.SUB.10.Se.SUB.4.(SPh).SUB.16.]/TOPSe/Cd(CH.SUB.3.CO.SUB.2.).SUB.2 .in HDA
(24) HDA (300 g) was placed in a three-neck flask and dried/degassed by heating to 120° C. under a dynamic vacuum for 1 hour. The solution was then cooled to 70° C. To this was added 1.0 g of [Et.sub.3NH].sub.4[Cd.sub.10Se.sub.4(SPh).sub.16] (0.311 mmol), TOPSe (20 ml, 40.00 mmol) [previously prepared from dissolving selenium powder in TOP] and Cd(CH.sub.3CO.sub.2).sub.2 (10.66 g 40.00 mmol) the temperature of reaction mixture was gradually increased from 70° C. to 180° C. over an 8 hour period. The progressive formation/growth of the nanoparticles was monitored by their emission wavelength by taking aliquots from the reaction mixture and measuring their UV-vis and PL spectra. The reaction was stopped when the emission spectra had reached 572 nm by cooling the reaction to 60° C. followed by addition of 200 ml of dry “warm” ethanol which gave a precipitation of nanoparticles. The resulting CdSe were dried before re-dissolving in toluene filtering through Celite followed by re-precipitation from warm ethanol to remove any excess HDA and Cd(CH.sub.3CO.sub.2).sub.2. This produced 9.26 g of HDA capped CdSe nanoparticles.
Example 2
Preparation of CdSe Nanoparticles from [Et.SUB.3.NH].SUB.4.[Cd.SUB.10.Se.SUB.4.(SPh).SUB.16.]/TOPSe/Cd(CH.SUB.3.CO.SUB.2.).SUB.2 .in HDA
(25) HDA (250 g) and octylamine (20 g) was placed in a three-neck flask and dried/degassed by heating to 120° C. under a dynamic vacuum for 1 hour. The solution was then cooled to 70° C. To this was added 1.0 g of [Et.sub.3NH].sub.4[Cd.sub.10Se.sub.4(SPh).sub.16] (0.311 mmol), TOPSe (1M, 4 ml, 4.00 mmol) [previously prepared from dissolving selenium powder in TOP] and Cd(CH.sub.3CO.sub.2).sub.2 dissolved in TOP (0.5M, 4 ml, 2.00 mmol) the temperature of reaction mixture was gradually increased from 70° C. to 150° C. over an hour period. A further 17 ml (17.00 mmol) of TOPSe and 27 ml of a 0.5M Cd(CH.sub.3CO.sub.2).sub.2 dissolved in TOP (13.50 mmol) were added dropwise while the temperature was gradually increased to 200° C. over a 24 hour period. The progressive formation/growth of the nanoparticles was monitored by their emission wavelength by taking aliquots from the reaction mixture and measuring their UV-vis and PL spectra. The reaction was stopped when the emission spectra had reached the desired size 630 nm by cooling the reaction to 60° C. followed by addition of 200 ml of dry “warm” ethanol which gave a precipitation of particles. The resulting CdSe were dried before re-dissolving in toluene filtering through Celite followed by re-precipitation from warm ethanol to remove any excess HDA. This produced 4.56 g of HDA capped CdSe nanoparticles.
Example 3
Preparation of CdSe Nanoparticles from [Et.SUB.3.NH].SUB.4.[Cd.SUB.10.Se.SUB.4.(SPh).SUB.16.]/TOP/Se/CdO in HDA
(26) HDA (150 g) and t-decylphosphonic acid (0.75 g) was placed in a three-neck flask and dried and degassed by heating to 120° C. under a dynamic vacuum for 1 hour. The solution was then cooled to 80° C. To this was added 0.5 g of [Et.sub.3NH].sub.4[Cd.sub.10Se.sub.4(SPh).sub.16] (0.156 mmol), 20 ml of TOP, 0.6 g of selenium powder (7.599 mmol) and 0.8 g CdO (6.231 mmol) the reaction mixture was allowed to stir to give a pale red cloudy mixture. The temperature of the reaction mixture was gradually increased from 80° C. to 250° C. over a period of 24 h. The progressive formation/growth of the nanoparticles was followed by their emission wavelength by taking aliquots from the reaction mixture and measuring their UV-vis and PL spectra. The reaction was stopped when the emission spectra had reached the desired size (593 nm) by cooling the reaction to 60° C. followed by addition of 200 ml of dry “warm” ethanol, which gave a precipitation of particles. The resulting CdSe were dried before re-dissolving in toluene filtering through Celite followed by re-precipitation from warm ethanol to remove any excess HDA. This produced 1.55 g of HDA capped CdSe nanoparticles.
Example 4
Preparation of CdSe Nanoparticles from [Et.SUB.3.NH].SUB.4.[Cd.SUB.10.Se.SUB.4.(SPh).SUB.16.]/TOPSe/Cd(HO).SUB.2 .in HDA
(27) HDA (400 g) was placed in a three-neck flask and dried and degassed by heating to 120° C. under a dynamic vacuum for 1 hour. The solution was then cooled to 70° C. To this was added 1.00 g of [Et.sub.3NH].sub.4[Cd.sub.10Se.sub.4(SPh).sub.16] (0.278 mmol), 20.0 ml of TOPSe, (2M solution) and 5.85 g of Cd(OH).sub.2 (40.00 mmol), the reaction mixture was allowed to stir to give a pale yellow cloudy mixture. The temperature of the reaction mixture was gradually increased from 70° C. to 240° C. over a period of 24 h. The progressive formation/growth of the nanoparticles was followed by their emission wavelength by taking aliquots from the reaction mixture and measuring their UV-vis and PL spectra. The reaction was stopped when the emission spectra had reached the desired size (609 nm) by cooling the reaction to 60° C. followed by addition of 200 ml of dry “warm” ethanol, which gave a precipitation of particles. The resulting CdSe were dried before redissolving in toluene filtering through Celite followed by re-precipitation from warm ethanol to remove any excess HDA. This produced 10.18 g of HDA capped CdSe nanoparticles.
Example 5
Preparation of CdSe Nanoparticles from [Et.SUB.3.NH].SUB.4.[Cd.SUB.10.Se.SUB.4.(SPh).SUB.16.]/TOPSe/Me.SUB.2.Cd in HDA
(28) HDA (100 g) was placed in a three-neck flask and dried and degassed by heating to 120° C. under a dynamic vacuum for 1 hour. The solution was then cooled to 70° C. To this was added 0.13 g of [Et.sub.3NH].sub.4[Cd.sub.10Se.sub.4(SPh).sub.16] (0.036 mmol), 2.5 ml of TOPSe, (2M solution) and 0.71 g Me.sub.2Cd [that had previously been dissolved in TOP] (0.358 ml, 5.00 mmol) the reaction mixture was allowed to stir. The temperature of the reaction mixture was gradually increased from 80° C. to 260° C. over a period of 24 h. The progressive formation/growth of the nanoparticles was followed by their emission wavelength by taking aliquots from the reaction mixture and measuring their UV-Vis and PL spectra. The reaction was stopped when the emission spectra had reached the desired size (587 nm) by cooling the reaction to 60° C. followed by addition of 100 ml of dry “warm” ethanol, which gave a precipitation of particles. The resulting CdSe were dried before re-dissolving in toluene filtering through Celite followed by re-precipitation from warm ethanol to remove any excess HDA. This produced 1.52 g of HDA capped CdSe nanoparticles.
Example 6
Preparation of CdSe Nanoparticles from [Et.SUB.3.NH].SUB.4.[Cd.SUB.10.Se.SUB.4.(SPh).SUB.16.]/TOPSe/Me.SUB.2.Cd in HDA
(29) HDA (100 g) was placed in a three-neck flask and dried and degassed by heating to 120° C. under a dynamic vacuum for 1 hour. The solution was then cooled to 70° C. To this was added 0.13 g of [Et.sub.3NH].sub.4[Cd.sub.10Se.sub.4(SPh).sub.16] (0.036 mmol). The temperature was then increased to 100° C. and maintained at this temperature while 2.5 ml of TOPSe, (2M solution) and 0.71 g Me.sub.2Cd [that had previously been dissolved in TOP] (0.358 ml, 5.00 mmol) were added dropwise over a 4 hour period. The progressive formation/growth of the nanoparticles was followed by their emission wavelength by taking aliquots from the reaction mixture and measuring their UV Vis and PL spectra. The reaction was stopped when the emission spectra had reached the desired size (500 nm) by cooling the reaction to 60° C. followed by addition of 100 ml of dry “warm” ethanol, which gave a precipitation of particles. The resulting CdSe were dried before redissolving in toluene filtering through Celite followed by re-precipitation from warm ethanol to remove any excess HDA. This produced 1.26 g of HDA capped CdSe nanoparticles.
Example 7
Preparation of CdSe Nanoparticles from [Et.SUB.3.NH].SUB.4.[Cd.SUB.10.Se.SUB.4.(SPh).SUB.16.]/TOPSe/(C.SUB.17.H.SUB.35.COO).SUB.2.Cd in HDA
(30) HDA (200 g) was placed in a three-neck flask and dried and degassed by heating to 120° C. under a dynamic vacuum for 1 hour. The solution was then cooled to 80° C. To this was added 0.5 g of [Et.sub.3NH].sub.4[Cd.sub.10Se.sub.4(SPh).sub.16] (0.139 mmol), 20 ml of TOPSe (2M solution) and a solution of 2.568 g CdO (20 mmol) previously dissolved in steric acid (23.00 g), the reaction mixture was allowed to stir to give a pale yellow clear solution. The temperature of the reaction mixture was gradually increased from 70° C. to 220° C. over a period of 24 h. The progressive formation/growth of the nanoparticles was followed by their emission wavelength by taking aliquots from the reaction mixture and measuring their UV-vis and PL spectra. The reaction was stopped when the emission spectra had reached the desired size (590 nm) by cooling the reaction to 60° C. followed by addition of 400 ml of dry “warm” ethanol, which gave a precipitation of particles. The resulting CdSe were dried before re-dissolving in toluene filtering through Celite followed by re-precipitation from warm ethanol to remove any excess HDA. This produced 4.27 g of HDA capped CdSe nanoparticles.
Example 8
Preparation of CdSe Nanoparticles from [Et.SUB.3.NH].SUB.4.[Cd.SUB.10.Se.SUB.4.(SPh).SUB.16.]/TOPSe/CdCO.SUB.3 .in HDA
(31) HDA (50 g) was placed in a three-neck flask and dried/degassed by heating to 120° C. under a dynamic vacuum for 1 hour. The solution was then cooled to 75° C. To this was added 0.5 g of [Et.sub.3NH].sub.4[Cd.sub.10Se.sub.4(SPh).sub.16] (0.156 mmol), TOPSe (1.0M, 5 ml, 5.00 mmol) [previously prepared from dissolving selenium powder in TOP] and CdCO.sub.3 dissolved in TOP (0.5M, 5 ml, 2.50 mmol) the temperature of reaction mixture was gradually increased from 70° C. to 200° C. over a 48 h period. The progressive formation/growth of the nanoparticles were monitored by their emission wavelength by taking aliquots from the reaction mixture and measuring their UV-vis and PL spectra. The reaction was stopped when the emission spectra had reached the desired size (587 nm) by cooling the reaction to 60° C. followed by addition of 200 ml of dry “warm” ethanol which gave a precipitation of particles. The resulting CdSe were dried before re-dissolving in toluene filtering through Celite followed by reprecipitation from warm ethanol to remove any excess HDA. This produced 0.95 g of HDA capped CdSe nanoparticles.
Example 9
Preparation of CdTe Nanoparticles from [Et.SUB.3.NH].SUB.4.[Cd.SUB.10.Se.SUB.4.(SPh).SUB.16.]/TOPTe/Cd(Ch.SUB.3.CO.SUB.2.).SUB.2 .in HDA
(32) HDA (200 g) was placed in a three-neck flask and dried/degassed by heating to 120° C. under a dynamic vacuum for 1 hour. The solution was then cooled to 70° C. To this was added 1.0 g of [Et.sub.3NH].sub.4[Cd.sub.10Se.sub.4(SPh).sub.16] (0.311 mmol), a brown slurry of TOP (20 ml) with tellurium (2.55 g, 20.00 mmol) along with Cd(CH.sub.3CO.sub.2).sub.2 (4.33 g, 20.00 mmol) was added. The temperature of reaction mixture was gradually increased from 70° C. to 160° C. over an 8 hour period. The progressive formation/growth on the CdTe nanoparticles was monitored by their emission wavelengths by taking aliquots from the reaction mixture and measuring their UV-vis and PL spectra. The reaction was stopped when the emission spectra had reached (624 nm) by cooling the reaction to 60° C. followed by addition of 200 ml of dry “warm” ethanol which gave a precipitation of particles. The resulting CdTe were dried before recrystallizing from toluene followed by re-precipitation from warm ethanol to remove any excess HDA. This produced 6.92 g of HDA capped CdTe nanoparticles.
REFERENCES
(33) 1. Henglein, A. Chem Rev. 1989, 89, 1861. 2. Steigerwald, M. L.; Brus, L. E. Acc. Chem. Res. 1990, 23, 183. 3. Bawendi, M. G.; Steigerwald, M. L.; Brus, L. E. Annu. Rev. Phys. Chem., 1990, 41,477. 4. Weller, H. Angew. Chem. Int. Ed. Engl. 1993, 32, 41. 5. Weller, H. Adv. Mater, 1993, 5, 88. 6. Hagfeldt, A.; Gratzel, M. Chem. Rev. 1995, 95, 49. 7. Fendler, J. H.; Meldrum, F. C. Adv. Mater. 1995, 7,607. 8. Alivisatos, A. P.; J. Phys. Chem. 1996, 100, 13226. 9. Stroscio, J. A.; Eigler, D. M. Science 1991, 254, 1319. 10. Lieber, C. M.; Liu, J.; Sheehan, P. Angew. Chem. Int. Ed Engl. 1996, 35, 687. 11. Berry, C. R. Phys. Rev. 1967, 161, 848. 12. Matijevic, E. Ann. Rev. Mater. Sci. 1985, 15, 483. 13. Matijevic, E. Langmuir 1986, 2, 12. 14. A Eychmüller, A. Mews, and H. Weller, Chem. Phys. Lett. 208, p. 59 (1993). 15. Murray, C. B.; Norris, D. J.; Bawendi, M. G. J. Am. Chem. Soc. 1993, 115, 8706. 16. A. P. Alivisatos, J. Wickham, X. G. Peng, J. Am. Chem. Soc, 1998, 120, 5343. 17. X. G. Peng, L. Manna, W. D. Yang, J. Wickham, E. Scher, A. Kadavanich, A. P. Alivisatos, Nature 2000, 404, 59. 18. Peng, Z. A.; Peng, X. G. J. Am. Chem. Soc. 2001, 123, 1389. 19. a) Bunge, S. D.; Krueger, K. M.; Boyle, T. J.; Rodriguez, M. A.; Headley, T. J.; Colvin, V. L., J. Mater. Chem., 2003, 13, 1705: b) Aldana, J.; Wang, Y. A.; Peng, X. I. Am. Chem. Soc. 2001, 123, 8844. 20. Pradhan N.; Efrima S.; J. Am. Chem Soc 2003, 125, 2050; Qu, L.; Peng, Z. A.; Peng, X. Nano Lett. 2001, 1,333. 21. Jegier, J. A.; McKernan, S.; Gladfelter, W. L. Chem. Mater., 1998, 10, 2041. 22. Kher, S. S.; Wells, R. L. Chem. Mater., 1994, 6, 2056. 23. Salata, O. V.; Dobson, P. J.; Hull, P. J.; Hutchison, J. L. Appl. Phys. Letters 1994, 65, 189. 24. Sercel, P. C.; Saunders, W. A.; Atwater, H. A.; Vahala, K. J.; Flagan, R C. Appl. Phys. Lett., 1992, 61, 696. 25. Olshaysky, M. A.; Goldstein, A. N.; Alivisatos, A. P. J. Am. Chem. Soc., 1990, 112, 9438. 26. Guzelian, A. A.; Katari, J. E. B.; Kadavanich, A. V.; Banin, U.; Hamad, K.; Juban, E.; Alivisatos, A. P.; Wolters, R. H.; Arnold, C. C.; Heath, J. R J. Phys. Chem., 1996, 100, 7212. 27. Wells, R L.; Aubuchon, S. R; Kher, S. S.; Lube, M. S.; White, P. Chem. Mater., 1995, 7, 793. 28. Agger, J. R; Anderson, M. W.; Pemble, M. E.; Terasaki, O.; Nozue, Y. J. Phys. Chem. B 1998, 102, 3345. 29. Micic, O. I.; Sprague, J. R.; Curtis, C. J.; Jones, K. M.; Machol, J. L.; Nozic, A.; Giessen, J. H.; Fluegel, B.; Mohs, G.; Peyghambarian, N. J. Phys. Chem., 1995, 99, 7754. 30. Guzelian, A. A.; Banin, U.; Kadavanich, A. V.; Peng, X.; Alivisatos, A. P. Appl. Phys. Lett., 1996, 69, 1432. 31. Wang, Y.; Suna, Mahler, A. W.; Kasowski, R. J. Chem. Phys., 1987, 87, 7315. 32. Gao, M.; Yang, Y.; Yang, B.; Bian, F.; Shen, J. J. Chem. Soc. Commun., 1994, 2779. 33. Mekis, I.; Talapin, D. V.; Kornowski, A.; Haase, M.; Weller, H. J. Phys. Chem. B., 2003, 107, 7454. 34. LØver, T.; Bowmaker, G. A.; Seakins, J. M.; Cooney, R P.; Henderson, W. J. Mater. Chem., 1997, 7(4), 647. 35. Cumberland, S. L.; Hanif, K. M.; Javier, A.; Khitov, K. A.; Strouse, G. F.; Woessner, S. M.; Yun, C. S. Chem. Mater. 2002, 14, 1576. 36. Dance, I. G.; Choy, A.; Scudder, M. L, J. Am. Chem. Soc., 1984, 106, 6285.