METHOD FOR METALLIZING FRONT ELECTRODE OF N-TYPE SOLAR CELL

Abstract

The present invention relates to a method for metallizing a front electrode of an N-type solar cell, including: treating an N-type crystalline silicon substrate to form a p.sup.+ doped region and a front surface passivation anti-reflection coating on a front surface of the N-type crystalline silicon substrate in an inside-out sequence, printing an aluminum paste on the front surface passivation anti-reflection coating to form a first finger, overprinting a silver paste on the first finger to form a second finger, and printing a front silver paste on the first finger to form a busbar. In the present invention, the superposition of the second finger on the first finger can reduce line resistance while ensuring a good ohmic contact, which further improves the photoelectric conversion efficiency of solar cells. Moreover, since no grooving procedure is required, the process is simplified and cost-efficient.

Claims

1. A method for metallizing a front electrode of an N-type solar cell, comprising the following steps: (1) preparing an N-type double-sided cell comprising an N-type crystalline silicon substrate before metallization, and forming a p.sup.+ doped region and a front surface passivation anti-reflection coating on a front surface of the N-type crystalline silicon substrate in an inside-out sequence; and forming an n.sup.+ doped region and a rear surface passivation coating on a rear surface of the N-type crystalline silicon substrate in an inside-out sequence; and (2) printing an aluminum paste on the front surface passivation anti-reflection coating to form a first finger, overprinting a silver paste on the first finger to form a second finger, and printing a front silver paste on the first finger to form a busbar.

2. The method for metallizing the front electrode of the N-type solar cell according to claim 1, wherein the passivation anti-reflection coating on the front surface of the N-type crystalline silicon substrate comprises one or more of SiO.sub.2, SiN.sub.x or Al.sub.2O.sub.3 dielectric coatings, and the rear surface passivation coating is a composite dielectric coating consisting of SiO.sub.2 and SiN.sub.x dielectric coatings; the N-type crystalline silicon substrate has a thickness of 50-300 μm; the p.sup.+ doped region has a doping depth of 0.5-2.0 μm; the front surface passivation anti-reflection coating has a thickness of 70-110 nm; the rear surface passivation coating has a thickness of no less than 20 nm; the n.sup.+ doped region has a doping depth of 0.5-2.0 μm.

3. The method for metallizing the front electrode of the N-type solar cell according to claim 1, wherein the first finger has a width of 20-45 μm and a height of 10-20 μm, and a distance between two adjacent first fingers is 0.8-1.5 mm.

4. The method for metallizing the front electrode of the N-type solar cell according to claim 1, wherein the second finger has a width of 30-50 μm and a height of 5-10 μm, and a distance between two adjacent second fingers is 0.8-1.5 mm.

5. The method for metallizing the front electrode of the N-type solar cell according to claim 1, wherein the busbar has a width of 0.5-3 mm and a height of 5-10 μm.

6. The method for metallizing the front electrode of the N-type solar cell according to claim 1, wherein the front surface passivation anti-reflection coating is printed with the aluminum paste, dried at 200-300° C. for 2-5 min and sintered at a sintering peak temperature of 550-780° C. for 8-15 s to form the first finger; the first finger is overprinted with a low temperature-curing silver paste, dried at 100-200° C. for 5-10 min and cured at 150-250° C. for 3-5 min to form the second finger.

7. The method for metallizing the front electrode of the N-type solar cell according to claim 1, wherein the front surface passivation anti-reflection coating is printed with the aluminum paste, dried at 200-300° C. for 2-5 min and sintered at a sintering peak temperature of 550-780° C. for 8-15 s to form the first finger; the first finger is overprinted with a low-to-medium temperature-curing silver paste, dried at 200-300° C. for 2-5 min and sintered at 300-500° C. for 8-15 min to form the second finger.

8. The method for metallizing the front electrode of the N-type solar cell according to claim 1, wherein the front surface passivation anti-reflection coating is printed with the aluminum paste and dried at 200-300° C. for 2-5 min to form the first finger; the first finger is overprinted with a medium-to-high temperature-sintering silver paste, dried at 200-300° C. for 2-5 min and sintered at a sintering peak temperature of 700-780° C. for 8-15 min to form the second finger.

9. The method for metallizing the front electrode of the N-type solar cell according to claim 1, wherein the printed front silver paste for forming the busbar is selected from one of a low temperature-curing silver paste, a low-to-medium temperature-sintering silver paste and a high temperature-sintering silver paste.

10. The method for metallizing the front electrode of the N-type solar cell according to claim 1, wherein the printed front silver paste for forming the busbar and the printed front silver paste for forming the second finger may vary.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0022] FIG. 1 is a schematic cross-sectional view of a solar cell prepared according to the method for metallizing a front electrode of an N-type solar cell disclosed herein.

[0023] FIG. 2 is a schematic front view of a solar cell prepared using the method for metallizing a front electrode of an N-type solar cell disclosed herein.

[0024] 1—second finger; 2—first finger; 3—front surface passivation anti-reflection coating; 4—p.sup.+ doped region; 5—rear-side silver paste; 6—n.sup.+ doped region; 7—N-type crystalline silicon substrate; 8—finger; 9—busbar.

DESCRIPTION OF THE EMBODIMENTS

[0025] The technical schemes in the embodiments of the present invention will be clearly and completely described below, for a better understanding of the advantages and features of the present invention by those skilled in the art, and for a more the clearly defined protection scope of the present invention. The described embodiments are only some, but not all, embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making any creative effort will fall within the protection scope of the present invention.

Example 1

[0026] Provided is a method for metallizing a front electrode of an N-type solar cell, including the following specific steps:

[0027] An N-type double-sided cell including an N-type crystalline silicon substrate 7 was first prepared before metallization, a front surface of the N-type crystalline silicon substrate 7 including a p.sup.+ doped region 4 and a front surface passivation anti-reflection coating 3 in an inside-out sequence; and a rear surface of the N-type crystalline silicon substrate 7 including an n.sup.+ doped region 6 and a rear surface passivation coating in an inside-out sequence. The front surface passivation anti-reflection coating included one or more of SiO.sub.2, SiN.sub.x, and Al.sub.2O.sub.3 dielectric coatings, and the rear surface passivation coating was a composite dielectric coating consisting of SiO.sub.2 and SiN.sub.x dielectric coatings. The N-type crystalline silicon substrate 7 had a thickness of 50-300 μm; the p.sup.+ doping region 4 had a doping depth of 0.5-2.0 μm; the front surface passivation anti-reflection coating 3 had a thickness of 70-110 nm; the rear surface passivation coating had a thickness of no less than 20 nm; the n.sup.+ doping region 6 had a doping depth of 0.5-2.0 μm.

[0028] On the rear surface of the N-type crystalline silicon substrate 7, the electrode was printed with a silver paste and dried with a pattern of H-shaped grid lines, wherein 5 rear-side busbars 9 having a width of 0.5-3 mm and a length of 154 mm were arranged equidistantly; 100 rear-side fingers having a width of 20-60 μm and a length of 154 mm were arranged in parallel at an interval of 1.55 mm.

[0029] On the front surface of the N-type crystalline silicon substrate 7, the first finger 2 was printed with a corrosive aluminum paste, dried at 250° C. for 3 min, and sintered at a sintering peak temperature of 650° C. for 11 s to form the first finger 2. The first finger 2 had a width of 33 μm and a height of 15 μm, and 80 first fingers 2 were arranged with an interval of 1.15 mm between two adjacent first fingers 2.

[0030] The first finger 2 on the front surface of the N-type crystalline silicon substrate 7 was overprinted with a low temperature-curing silver paste, dried at 150° C. for 8 min, and cured at 200° C. for 4 min to form the second finger 1. The second finger 1 had a width of 40 μm, a height of 7 μm, and an interval of 1.15 mm between two adjacent second fingers 1. At the same time, the front busbar 9 was printed with a low temperature-curing silver paste, dried and cured. 5 front busbars 9 having a width of 1.75 mm and a height of 7.5 μm were arranged equidistantly.

Example 2

[0031] Provided is a method for metallizing a front electrode of an N-type solar cell, including the following specific steps:

[0032] An N-type double-sided cell including an N-type crystalline silicon substrate 7 was first prepared before metallization, a front surface of the N-type crystalline silicon substrate 7 including a p.sup.+ doped region 4 and a front surface passivation anti-reflection coating 3 in an inside-out sequence; and a rear surface of the N-type crystalline silicon substrate 7 including an n.sup.+ doped region 6 and a rear surface passivation coating in an inside-out sequence. The front surface passivation anti-reflection coating included one or more of SiO.sub.2, SiN.sub.x, and Al.sub.2O.sub.3 dielectric coatings, and the rear surface passivation coating was a composite dielectric coating consisting of SiO.sub.2 and SiN.sub.x dielectric coatings. The N-type crystalline silicon substrate 7 had a thickness of 50-300 μm; the p.sup.+ doping region 4 had a doping depth of 0.5-2.0 μm; the front surface passivation anti-reflection coating 3 had a thickness of 70-110 nm; the rear surface passivation coating had a thickness of no less than 20 nm; the n.sup.+ doping region 6 had a doping depth of 0.5-2.0 μm.

[0033] On the rear surface of the N-type crystalline silicon substrate 7, the electrode was printed with a silver paste and dried with a pattern of H-shaped grid lines, wherein 5 rear-side busbars 9 having a width of 0.5-3 mm and a length of 154 mm were arranged equidistantly; 100 rear-side fingers having a width of 20-60 μm and a length of 154 mm were arranged in parallel at an interval of 1.55 mm.

[0034] On the front surface of the N-type crystalline silicon substrate 7, the first finger 2 was printed with a corrosive aluminum paste, dried at 200° C. for 5 min, and sintered at a sintering peak temperature of 550° C. for 15 s to form the first finger 2. The first finger 2 had a width of 20 μm and a height of 10 μm, and 80 first fingers 2 were arranged with an interval of 0.8 mm between two adjacent first fingers 2.

[0035] The first finger 2 on the front surface of the N-type crystalline silicon substrate 7 was overprinted with a low temperature-curing silver paste and a low-to-medium temperature-curing silver paste, dried at 200-300° C. for 2-5 min, and sintered at 300° C. for 15 min to form the second finger 1. The second finger 1 had a width of 30 μm, a height of 5 μm, and an interval of 0.8 mm between two adjacent second fingers 1. At the same time, the front busbar 9 was printed with a medium-to-low temperature-curing silver paste, dried and sintered. 5 front busbars 9 having a width of 0.5 mm and a height of 5 μm were arranged equidistantly.

Example 3

[0036] Provided is a method for metallizing a front electrode of an N-type solar cell, including the following specific steps:

[0037] An N-type double-sided cell including an N-type crystalline silicon substrate 7 was first prepared before metallization, a front surface of the N-type crystalline silicon substrate 7 including a p.sup.+ doped region 4 and a front surface passivation anti-reflection coating 3 in an inside-out sequence; and a rear surface of the N-type crystalline silicon substrate 7 including an n.sup.+ doped region 6 and a rear surface passivation coating in an inside-out sequence. The front surface passivation anti-reflection coating included one or more of SiO.sub.2, SiN.sub.x, and Al.sub.2O.sub.3 dielectric coatings, and the rear surface passivation coating was a composite dielectric coating consisting of SiO.sub.2 and SiN.sub.x dielectric coatings. The N-type crystalline silicon substrate 7 had a thickness of 50-300 μm; the p.sup.+ doping region 4 had a doping depth of 0.5-2.0 μm; the front surface passivation anti-reflection coating 3 had a thickness of 70-110 nm; the rear surface passivation coating had a thickness of no less than 20 nm; the n.sup.+ doping region 6 had a doping depth of 0.5-2.0 μm.

[0038] On the rear surface of the N-type crystalline silicon substrate 7, the electrode was printed with a silver paste and dried with a pattern of H-shaped grid lines, wherein 5 rear-side busbars 9 having a width of 0.5-3 mm and a length of 154 mm were arranged equidistantly; 100 rear-side fingers having a width of 20-60 μm and a length of 154 mm were arranged in parallel at an interval of 1.55 mm.

[0039] On the front surface of the N-type crystalline silicon substrate 7, the first finger 2 was printed with a corrosive aluminum paste and dried at 300° C. to form the first finger 2. The first finger 2 had a width of 45 μm and a height of 20 μm, and 80 first fingers 2 were arranged with an interval of 1.5 mm between two adjacent first fingers 2.

[0040] The first finger 2 on the front surface of the N-type crystalline silicon substrate 7 was overprinted with a medium-to-high temperature-sintering silver paste, dried at 300° C. for 2 min, and sintered at a sintering peak temperature of 780° C. for 8 min to form the second finger 1. The second finger 1 had a width of 50 μm, a height of 10 μm, and an interval of 1.5 mm between two adjacent second fingers 1. At the same time, the front busbar 9 was printed with a low-to-medium temperature-curing silver paste, dried and sintered. 5 front busbars 9 having a width of 0.5 mm and a height of 5 μm were arranged equidistantly.

Comparative Example

[0041] An N-type double-sided cell including an N-type crystalline silicon substrate 7 was prepared before metallization, a front surface of the N-type crystalline silicon substrate 7 including a p.sup.+ doped region 4 and a front surface passivation anti-reflection coating 3 in an inside-out sequence; and a rear surface of the N-type crystalline silicon substrate 7 including an n.sup.+ doped region 6 and a rear surface passivation coating in an inside-out sequence. The front surface passivation anti-reflection coating included one or more of SiO.sub.2, SiN.sub.x, and Al.sub.2O.sub.3 dielectric coatings, and the rear surface passivation coating was a composite dielectric coating consisting of SiO.sub.2 and SiN.sub.x dielectric coatings. The N-type crystalline silicon substrate 7 had a thickness of 50-300 μm; the p.sup.+ doping region 4 had a doping depth of 0.5-2.0 μm; the front surface passivation anti-reflection coating 3 had a thickness of 70-110 nm; the rear surface passivation coating had a thickness of no less than 20 nm; the n.sup.+ doping region 6 had a doping depth of 0.5-2.0 μm.

[0042] A groove-shaped structure was formed on the front surface passivation anti-reflection coating by using a laser to ensure that the groove-shaped structure completely penetrated through the passivation anti-reflection coating. The groove-shaped structure is a continuous linear structure with a width of 20-60 μm and a length of 154 mm. A total of 80 continuous lines were arranged in parallel at an interval of 1.95 mm.

[0043] On the rear surface of the N-type crystalline silicon substrate 7, the electrode was printed with a silver paste and dried with a pattern of H-shaped grid lines, wherein 5 rear-side busbars 9 having a width of 0.5-3 mm and a length of 154 mm were arranged equidistantly; 100 rear-side fingers having a width of 20-60 μm and a length of 154 mm were arranged in parallel at an interval of 1.55 mm.

[0044] On the front surface of the N-type crystalline silicon substrate 7, the front finger was printed with aluminum paste and dried. 80 front fingers having a width of 20-60 μm and a length of 154 mm were arranged in parallel at an interval of 1.95 mm. The printed front fingers must completely match with the grooving pattern at printing.

[0045] On the front surface of the N-type crystalline silicon substrate 7, the front busbar 9 was printed with aluminum paste and dried. 5 front busbars 9 having a width of 0.5-3 mm (1 mm in this example) and a length of 154 mm were arranged equidistantly.

[0046] The treated N-type crystalline silicon substrate was conveyed into a conveyor belt sintering furnace for sintering at a sintering peak temperature of 900° C. After the sintering was complete, the manufacture of the N-type solar cell was finished.

[0047] The N-type solar cells prepared in Examples 1-3 and the comparative example were subjected to performance measurement, and the results are shown in Table 1:

TABLE-US-00001 TABLE 1 Line Short- Open- Contact resistivity circuit circuit Fill resistivity Conversion Item (Ω .Math. cm) current (A) voltage (V) factor % (mΩ .Math. cm.sup.2) efficiency % Example 1  2.6 × 10.sup.−6 9.25 0.6835 79.53 1.0 24.56% Example 2 2.61 × 10.sup.−6 9.18 0.6855 80.22 0.8 24.43% Example 3 2.59 × 10.sup.−6 9.00 0.6805 80.5 0.7 24.16% Comparative 3.01 × 10.sup.−6 8.92 0.6735 76.53 2.5 22.89% Example

[0048] The solar cell prepared according to the method for metallizing disclosed herein has a significantly reduced line resistance relative to that in the prior art, and has a greatly improved photoelectric conversion efficiency.

[0049] The present invention is not limited to the above-mentioned optimal embodiments, and any other various products may be obtained by anyone in light of the present invention. However, no matter what change in shape or structure thereof is made, all technical schemes that are identical or similar to those of the present invention will fall within the protection scope of the present invention.