SUPERHARD CONSTRUCTIONS & METHODS OF MAKING SAME
20220144646 · 2022-05-12
Assignee
Inventors
- Roger William Nigel Nilen (Didcot, GB)
- NEDRET CAN (DIDCOT, GB)
- HUMPHREY SITHEBE (SPRINGS, ZA)
- DAVID BOWES (DIDCOT, GB)
- DEREK NELMS (HOUSTON, TX, US)
Cpc classification
B22F7/08
PERFORMING OPERATIONS; TRANSPORTING
B22F2005/001
PERFORMING OPERATIONS; TRANSPORTING
C22C26/00
CHEMISTRY; METALLURGY
B22F7/06
PERFORMING OPERATIONS; TRANSPORTING
E21B10/5735
FIXED CONSTRUCTIONS
B22F5/00
PERFORMING OPERATIONS; TRANSPORTING
International classification
B22F5/00
PERFORMING OPERATIONS; TRANSPORTING
B22F7/06
PERFORMING OPERATIONS; TRANSPORTING
B22F7/08
PERFORMING OPERATIONS; TRANSPORTING
C22C26/00
CHEMISTRY; METALLURGY
Abstract
A superhard construction comprises a substrate comprising a peripheral surface, an interface surface and a longitudinal axis and a super hard material layer formed over the substrate and having an exposed outer surface forming a working surface, a peripheral surface extending therefrom and an interface surface. One of the interface surface of the substrate or the interface surface of the super hard material layer comprises one or more projections arranged to project from the interface surface, the height of the one or more projections being between around 0.2 mm to around 1.0 mm measured from the lowest point on the interface surface from which the one or more projections extend.
Claims
1. A superhard construction comprising: a substrate comprising a peripheral surface, an interface surface and a longitudinal axis; and a super hard material layer formed over the substrate and having an exposed outer surface forming a working surface, a peripheral surface extending therefrom and an interface surface; wherein one of the interface surface of the substrate or the interface surface of the super hard material layer comprises: one or more projections arranged to project from the interface surface, the height of the one or more projections being between around 0.2 mm to around 1.0 mm measured from the lowest point on the interface surface from which the one or more projections extend.
2. The superhard construction of claim 1, wherein the height of the one or more projections is between around 0.3 mm to around 0.8 mm.
3. The superhard construction of claim 1, wherein all or a majority of the interface surface between the spaced-apart projections is non-curved and extends in one or more planes which are not substantially parallel to the plane of the exposed outer surface of the super hard material layer.
4. The superhard construction of claim 1, the substrate having a central longitudinal axis, wherein all or a majority of the interface surface between the spaced-apart projections extends in one or more planes which are not substantially parallel to a plane through which the central longitudinal axis of the substrate extends.
5. The superhard construction of claim 1, wherein the projections are arranged in one or more substantially radial arrays around the central longitudinal axis of the substrate.
6. The superhard construction of claim 5, wherein the projections are arranged in a first array and a second array, the second array being positioned radially within the first array.
7. The superhard construction of claim 6, wherein the first and second arrays are substantially concentric with the substrate.
8. The superhard construction of claim 6, wherein the first array comprises substantially double the number of projections than the second array.
9. The superhard construction of claim 6, wherein the projections in the first and second arrays are staggered relative to each other.
10. The superhard construction of claim 1, wherein the projections are randomly arranged on one of the interface surface of the substrate or the interface surface of the super hard material layer.
11. The superhard construction of claim 1, wherein one or more of the surfaces of all or a majority of the projections extend in one or more planes which are not substantially parallel to the plane of the exposed outer surface of the super hard material layer and/or in one or more planes which are not substantially parallel to a plane through which the central longitudinal axis of the substrate extends.
12. The superhard construction of claim 1, wherein the thickness of the super hard material layer about the central longitudinal axis of the substrate is substantially the same as the thickness of the super hard material layer at the peripheral surface.
13. The superhard construction of claim 1, wherein the super hard material layer comprises polycrystalline diamond material and a plurality of interstitial regions between inter-bonded diamond grains forming the polycrystalline diamond material; the super hard material layer comprising: a first region substantially free of a solvent/catalysing material; and a second region remote from the working surface that includes solvent/catalysing material in a plurality of the interstitial regions; wherein the first region extends to a depth of greater than around 300 microns from the working surface into the body of polycrystalline diamond material.
14. The superhard construction of claim 13, wherein the first region extends to a depth of between around 300 microns to around 1500 microns from the working surface into the body of polycrystalline diamond material.
15. The superhard construction of claim 13, wherein the first region extends to a depth of between around 300 microns to around 1000 microns from the working surface into the body of polycrystalline diamond material.
16. The superhard construction of claim 13, wherein the first region extends to a depth of between around 600 microns to around 1000 microns from the working surface into the body of polycrystalline diamond material.
17. The superhard construction of claim 1, wherein the exposed outer surface of the super hard layer is substantially planar.
18. The superhard construction of claim 1, wherein the one or more projections are of equal height.
19. The superhard construction of claim 1, comprising a plurality of projections arranged in a first array and a second array concentrically located within the first array, wherein the projections in the first array are of a greater height than the projections in the second array.
20. The superhard construction of claim 1, wherein any interface surface between any projections or not covered by the projections is uneven.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Non-limiting embodiments will now be described by way of example and with reference to the accompanying drawings in which:
[0019]
[0020]
[0021]
[0022]
[0023]
[0024]
DETAILED DESCRIPTION
[0025] In the embodiments described herein, when projections or depressions are described as being formed on the substrate surface, it should be understood that they could be formed instead on the surface of the super hard material layer that interfaces with the substrate interface surface, with the inverse features formed on the substrate. Additionally, it should be understood that a negative or reversal of the interface surface is formed on the super hard material layer interfacing with the substrate such that the two interfaces form a matching fit.
[0026] As used herein, a “super hard material” is a material having a Vickers hardness of at least about 28 GPa. Diamond and cubic boron nitride (cBN) material are examples of superhard materials.
[0027] As used herein, a “super hard construction” means a construction comprising a body of polycrystalline super hard material and a substrate attached thereto.
[0028] As used herein, polycrystalline diamond (PCD) is a type of polycrystalline super hard material (PCS) material comprising a mass of diamond grains, a substantial portion of which are directly inter-bonded with each other and in which the content of diamond is at least about 80 volume percent of the material. In one embodiment of PCD material, interstices between the diamond grains may be at least partly filled with a binder material comprising a catalyst for diamond. As used herein, “interstices” or “interstitial regions” are regions between the diamond grains of PCD material. In embodiments of PCD material, interstices or interstitial regions may be substantially or partially filled with a material other than diamond, or they may be substantially empty. PCD material may comprise at least a region from which catalyst material has been removed from the interstices, leaving interstitial voids between the diamond grains.
[0029] As used herein, PCBN (polycrystalline cubic boron nitride) material refers to a type of superhard material comprising grains of cubic boron nitride (cBN) dispersed within a matrix comprising metal or ceramic. PCBN is an example of a superhard material.
[0030] A “catalyst material” for a superhard material is capable of promoting the growth or sintering of the super hard material.
[0031] The term “substrate” as used herein means any substrate over which the super hard material layer is formed. For example, a “substrate” as used herein may be a transition layer formed over another substrate. Additionally, as used herein, the terms “radial” and “circumferential” and like terms are not meant to limit the feature being described to a perfect circle.
[0032] The superhard construction 1 shown in the attached figures may be suitable, for example, for use as a cutter insert for a drill bit for boring into the earth.
[0033] Like reference numbers are used to identify like features in all drawings.
[0034] In an embodiment as shown in
[0035] At one end of the substrate 10 is an interface surface 18 that interfaces with the super hard material layer 12 which is attached thereto at this interface surface. The substrate 10 is generally cylindrical and has a peripheral surface 20 and a peripheral top edge 22. In the embodiment shown in
[0036] As shown in
[0037] The projections 26 in the second array may be positioned to radially align with the spaces between the projections 24 in the first array. The projections 24, 26 and spaces may be staggered, with projections in one array overlapping spaces in the next array. This staggered or mis-aligned distribution of three-dimensional features on the interface surface may assist in distributing compressive and tensile stresses and/or reducing the magnitude of the stress fields and/or arresting crack growth by preventing an uninterrupted path for crack growth.
[0038] As shown in
[0039] The projections 24, 26 may have a smoothly curving upper surface or may have a sloping upper surface. In some embodiments, the projections 24, 26 may be slightly trapezoidal or tapered in shape, being widest nearer the interface surface from which they project.
[0040] In
[0041] The height of the projections 24, 26 is between around 0.2 mm to around 0.8 mm measured from the lowest point of the interface surface 18 to the maximum height of the projections 24, 26.
[0042] In the embodiment shown in
[0043] The arrangement and shape of the projections 24, 26 and spaces therebetween may affect the stress distributions in the cutting element 1 and may act to improve the cutting element's resistance to crack growth, in particular crack growth along the interface surface 18, for example by arresting or diverting crack growth across the stress zones in, around and above the projections 24, 26.
[0044] In this embodiment, all or a majority of the projections 24, 26 do not have any surface substantially parallel to either the cutting face of the super hard layer (not shown) which will be attached thereto, or the plane through which the longitudinal axis of the substrate extends. The projections 24, 26 may be all the same height or some may be of a greater height than others.
[0045] In one or more of the above-described embodiments, the features of the interface surface 18 may be formed integrally whilst the substrate is being formed through use of an appropriately shaped mold into which the particles of material to form the substrate are placed. Alternatively, the projections and uneven surfaces of the interface surface 18 may be created after the substrate has been created or part way through the creation process, for example by a conventional machining process. Similar procedures may be applied to the super hard material layer 12 to create the corresponding shaped interface surface for forming a matching fit with that of the substrate.
[0046] The super hard material layer 12 may be attached to the substrate by, for example, conventional brazing techniques or by sintering using a conventional high pressure and high temperature technique.
[0047] The durability of the cutter product including the substrate and super hard material layer with the aforementioned interface features and/or the mitigation of elastic stress waves therein may be further enhanced if the super hard material layer 12 is leached of catalyst material, either partially or fully, in subsequent processing, or subjected to a further high pressure high temperature sintering process. The leaching may be performed whilst the super hard material layer 12 is attached to the substrate or, for example, by detaching the super hard material layer 12 from the substrate, and leaching the detached super hard material layer 12. In the latter case, after leaching has taken place, the super hard material layer 12 may be reattached to the substrate using, for example, brazing techniques or by resintering using a high pressure and high temperature technique. As the height of the projections 24, 26 is between around 0.2 mm to around 1 mm, for example around 0.8 mm measured from the lowest point of the interface surface 18 to the maximum height of the projections 24, 26, this enables the super hard material layer 12 to be leached to a depth of greater than around 700 microns or even greater than around 1 mm.
[0048] Although particular embodiments have been described and illustrated, it is to be understood that various changes and modifications may be made. For example, the substrate described herein has been identified by way of example. It should be understood that the super hard material may be attached to other carbide substrates besides tungsten carbide substrates, such as substrates made of carbides of W, Ti, Mo, Nb, V, Hf, Ta, and Cr. Furthermore, although the embodiments shown in