Two-port on-wafer calibration piece circuit model and method for determining parameters
11733298 · 2023-08-22
Assignee
Inventors
- Yibang Wang (Shijiazhuang, CN)
- Aihua Wu (Shijiazhuang, CN)
- Faguo Liang (Shijiazhuang, CN)
- Chen Liu (Shijiazhuang, CN)
- Ye Huo (Shijiazhuang, CN)
- Peng Luan (Shijiazhuang, CN)
- Jing Sun (Shijiazhuang, CN)
- Yanli Li (Shijiazhuang, CN)
Cpc classification
G01R27/32
PHYSICS
G01R31/2837
PHYSICS
International classification
Abstract
The present application provides two-port on-wafer calibration piece circuit models and a method for determining parameters. The method includes: measuring a single-port on-wafer calibration piece circuit model corresponding to a first frequency band to obtain a first S parameter; calculating, according to the first S parameter, an intrinsic capacitance value of a two-port on-wafer calibration piece circuit model corresponding to the single-port on-wafer calibration piece circuit model; measuring the two-port on-wafer calibration piece circuit model corresponding to the terahertz frequency band to obtain a second S parameter; and calculating a parasitic capacitance value and a parasitic resistance value of the two-port on-wafer calibration piece circuit model according to the second S parameter and the intrinsic capacitance value.
Claims
1. A two-port on-wafer calibration piece circuit model, comprising: a second intrinsic capacitor, a second parasitic capacitor, and a second parasitic resistor; wherein the second parasitic capacitor and the second parasitic resistor are connected in series and form a first series circuit, the first series circuit and the second intrinsic capacitor are connected in parallel and form a third parallel circuit, a first end of the third parallel circuit is connected to a third single-port on-wafer calibration piece circuit model, and a second end of the third parallel circuit is connected to a fourth single-port on-wafer calibration piece circuit model; and wherein each of the third single-port on-wafer calibration piece circuit model and the fourth single-port on-wafer calibration piece circuit model comprises a crosstalk resistor R.sub.S′, a crosstalk capacitor C.sub.S′ and a second original single-port calibration piece circuit model, wherein the crosstalk capacitor R.sub.S′ and the cross talk resistor C.sub.S′ are connected in series and form a second series circuit, the second series circuit is connected in parallel to the second original single-port calibration piece circuit model, the second series circuit is connected between two ends of a port of the second original single-port calibration piece circuit model, and a first end of the second series circuit is connected to one of the two ends of the port of the second original single-port calibration piece circuit model to form a second connecting point; or the crosstalk resistor R.sub.S′ and the crosstalk capacitor C.sub.S′ are connected in parallel and form a fourth parallel circuit, the fourth parallel circuit is connected in parallel to the second original single-port calibration piece circuit model, the fourth parallel circuit is connected between two ends of the second original single-port calibration piece circuit model, and a first end of the fourth parallel circuit is connected to one of the two ends of the port of the second original single-port calibration piece circuit model to form a third connecting point.
2. The circuit model according to claim 1, wherein when the crosstalk capacitor R.sub.S′ and the crosstalk resistor C.sub.S′ are connected in series, the first end of the third parallel circuit is connected to the second connecting point of the third single-port on-wafer calibration piece circuit model, and the second end of the third parallel circuit is connected to the second connecting point of the fourth single-port on-wafer calibration piece circuit model; or when the crosstalk resistor R.sub.S′ and the crosstalk capacitor C.sub.S′ are connected in parallel, the first end of the third parallel circuit is connected to the third connecting point of the third single-port on-wafer calibration piece circuit model, and the second end of the third parallel circuit is connected to the third connecting point of the fourth single-port on-wafer calibration piece circuit model.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) In order to describe the technical solutions in the embodiments of the present application more clearly, drawings required to be used in the existing art and the embodiments will be briefly introduced below. Apparently, the drawings described below are only some embodiments of the present disclosure. Those of ordinary skill in the art also can obtain other drawings according to these drawings without doing creative work.
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DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS
(14) In the following description, for the purpose of illustration rather than limitation, specific details such as specific system structures and technologies are proposed for a thorough understanding of the embodiments of the present application. However, it should be clear to those skilled in the art that the present application can also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to avoid unnecessary details from obstructing the description of the present application.
(15) In order to illustrate the technical solutions described in the present application, specific embodiments are used for description below.
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(17) The first intrinsic capacitor C.sub.i, the first parasitic resistor C.sub.C, and the first parasitic resistor R.sub.C are respectively connected in parallel to form a first parallel circuit; one end of the first parallel circuit is connected with a first single-port on-wafer calibration piece circuit model; and the other end of the first parallel circuit is connected with a second single-port on-wafer calibration piece circuit model.
(18) Optionally, the first single-port on-wafer calibration piece circuit model and the second single-port on-wafer calibration piece circuit model are the same circuit models.
(19) Optionally, the first single-port on-wafer calibration piece circuit model or the second single-port on-wafer calibration piece circuit model includes a crosstalk resistor R.sub.S and a crosstalk capacitor C.sub.S, wherein the crosstalk capacitor C.sub.S and the crosstalk resistor R.sub.S are connected in parallel to form a second parallel circuit; and the second parallel circuit is connected in parallel to two ends of an original single-port calibration piece circuit model.
(20) The original single-port on-wafer calibration piece circuit model may be a load calibration piece circuit model, an open circuit calibration piece circuit model, or a short circuit calibration piece circuit model. In this way, after a parallel circuit of the crosstalk resistor and the crosstalk capacitor is added in the original single-port on-wafer calibration piece circuit model, three kinds of single-port on-wafer calibration piece circuit models may be formed, i.e., there are three kinds of first single-port on-wafer calibration piece circuit models or second single-port on-wafer calibration piece circuit models.
(21) Optionally, the two-port on-wafer calibration piece circuit model may be as follows: One end of the first parallel circuit is connected between the second parallel circuit in the first single-port on-wafer calibration piece circuit model and one end of a port of the original single-port calibration piece circuit model; and the other end of the first parallel circuit is connected between the second parallel circuit in the second single-port on-wafer calibration piece circuit model and one end of the port of the original single-port calibration piece circuit model.
(22) Due to the first single-port on-wafer calibration piece circuit model or the second single-port on-wafer calibration piece circuit model and the crosstalk elements between the two ports, there are also three kinds of two-port on-wafer calibration piece circuit models in the present embodiment, as shown in
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(24) For the above two-port on-wafer calibration piece circuit model, by means of adding the elements that represent the crosstalk between the two ports are added between the two single-port on-wafer calibration piece circuit models, new two-port on-wafer calibration piece circuit models are formed. As the on-wafer test efficiency increases, the accuracy of calibration and testing is higher when the two-port on-wafer calibration piece circuit model provided by the present disclosure is applied at the terahertz frequency band.
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(26) Optionally, the first single-port on-wafer calibration piece circuit model and the second single-port on-wafer calibration piece circuit model are the same circuit models.
(27) Optionally, the first single-port on-wafer calibration piece circuit model or the second single-port on-wafer calibration piece circuit model includes a crosstalk resistor R.sub.S′ and a crosstalk capacitor C.sub.S′, wherein the crosstalk resistor R.sub.S′ and the crosstalk capacitor C.sub.S′ are connected in series to form a second series circuit; the second series circuit is connected in parallel to two ends of a port of an original single-port calibration piece circuit model; Or, the crosstalk resistor R.sub.S′ and the crosstalk capacitor C.sub.S′ are connected in parallel to form a fourth parallel circuit, and the fourth parallel circuit is connected in parallel to two ends of a port of an original single-port calibration piece circuit model.
(28) The original single-port on-wafer calibration piece circuit model may be a load calibration piece circuit model, an open circuit calibration piece circuit model, or the short circuit calibration piece circuit model. In this way, after a crosstalk resistor and a crosstalk capacitor are added in the original single-port on-wafer calibration piece circuit model, six kinds of single-port on-wafer calibration piece circuit models may be formed. That is, there are six kinds of the first single-port on-wafer calibration piece circuit models or the second single-port on-wafer calibration piece circuit models.
(29) Optionally, the two-port on-wafer calibration piece circuit model may be as follows: One end of the third parallel circuit is connected between the second series circuit in the first single-port on-wafer calibration piece circuit model and one end of a port of the original single-port calibration piece circuit model; and the other end of the third parallel circuit is connected between the second series circuit in the second single-port on-wafer calibration piece circuit model and one end of the port of the original single-port calibration piece circuit model; Or, one end of the third parallel circuit is connected between the fourth parallel circuit in the first single-port on-wafer calibration piece circuit model and one end of the port of the original single-port calibration piece circuit model; and the other end of the third parallel circuit is connected between the fourth parallel circuit in the second single-port on-wafer calibration piece circuit model and one end of the port of the original single-port calibration piece circuit model.
(30) The first single-port on-wafer calibration piece circuit model, the second single-port on-wafer calibration piece circuit model and the crosstalk element between the two ports can form six kinds of two-port on-wafer calibration piece circuit models in the present embodiment, as shown in
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(33) For the above two-port on-wafer calibration piece circuit model, by means of adding the elements that represent the crosstalk between the two ports are added between the two single-port on-wafer calibration piece circuit models, new two-port on-wafer calibration piece circuit models are formed. As the on-wafer test efficiency increases, the accuracy of calibration and testing is higher when the two-port on-wafer calibration piece circuit model provided by the present disclosure is applied at the terahertz frequency band.
(34) Parameters in the two-port on-wafer calibration piece circuit model are calculated below according to the two-port on-wafer calibration piece circuit model provided in any embodiment.
(35) At step 501, a single-port on-wafer calibration piece circuit model corresponding to a first frequency band is measured to obtain a first S parameter.
(36) Optionally, the first frequency band is a low frequency band, i.e., a frequency band of 40 GHz or below. The obtained first S parameter may be an S parameter of a single-port load calibration piece module, an S parameter of a single-port open circuit calibration piece module, or an S parameter of a single-port short circuit calibration piece module. The measurement method is the same.
(37) At step 502, an intrinsic capacitance value of the two-port on-wafer calibration piece circuit model corresponding to the single-port on-wafer calibration piece circuit model is calculated according to the first S parameter.
(38) Optionally, the two-port on-wafer calibration piece circuit models shown in
(39) Optionally, the two-port on-wafer calibration piece circuit models shown in
(40) Optionally, in this step, when the intrinsic capacitance value of a two-port on-wafer calibration piece circuit model corresponding to the single-port on-wafer calibration piece circuit model is calculated according to the first S parameter, first S matrix transformation may be performed according to a first S matrix corresponding to the first S parameter, so as to obtain Y.sub.21 in the first Y matrix, and the intrinsic capacitance of the two-port on-wafer calibration piece circuit model is calculated according to the Y.sub.21.
(41) Optionally, the step that first S matrix transformation is performed according to a first S matrix corresponding to the first S parameter, so as to obtain Y.sub.21 in a first Y matrix includes the following steps: Y.sub.21 in the first Y matrix is obtained according to the
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where Y.sub.21 represents an element in the first Y matrix; S.sub.11, S.sub.21, S.sub.12, and S.sub.22 respectively represent parameters in the first S matrix; and |S| represents a determinant value of the first S matrix.
(43) Optionally, the obtained first Y matrix is also a 2×2 matrix, including Y.sub.11, Y.sub.21, Y.sub.12, and Y.sub.22. In the present embodiment, the subsequent calculation is performed only by using Y.sub.21.
(44) Optionally, the step that the intrinsic capacitance value of the two-port on-wafer calibration piece circuit model is calculated may include the following steps: the intrinsic capacitance value of the two-port on-wafer calibration piece circuit model is calculated according to
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where C.sub.i represents the intrinsic capacitance value; j represents an imaginary number; and ω represents an angular frequency corresponding to the first frequency band. ω=2πf.sub.1, f.sub.1 represents frequencies in the first frequency band.
(46) The calculation method of the intrinsic capacitance value C.sub.i′ is the same as the calculation method of the intrinsic capacitance value C.sub.i.
(47) At step 503, the two-port on-wafer calibration piece circuit model corresponding to the terahertz frequency band is calculated to obtain a second S parameter.
(48) According to the two-port on-wafer calibration piece circuit model directly measured in the terahertz frequency band, a corresponding two-port S parameter may be obtained, which is recorded as the second S parameter. The second S parameter is also a 2×2 matrix, including S.sub.11, S.sub.21, S.sub.12, and S.sub.22.
(49) At step 504, a parasitic capacitance value and a parasitic resistance value of the two-port on-wafer calibration piece circuit model are calculated according to the second S parameter and the intrinsic capacitance value.
(50) Optionally, in this step, second S matrix transformation may be firstly performed according to a second S matrix corresponding to the second S parameter, so as to obtain Y.sub.21′ in a second Y matrix; and the parasitic capacitance value and a parasitic resistance value of the two-port on-wafer calibration piece circuit model are calculated according to the Y.sub.21′ and the intrinsic capacitance value.
(51) Optionally, in this step, the calculation method for performing second S matrix transformation according to a second S matrix corresponding to the second S parameter to obtain Y.sub.21′ in a second Y matrix is the same as the calculation method for calculating the Y.sub.21 in the first Y matrix in the step 502, and descriptions thereof are omitted here.
(52) Optionally,
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and then obtaining
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(55) That is, the parasitic capacitance value and the parasitic resistance value of the two-port on-wafer calibration piece circuit model are calculated according to
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where w′ represents an angular frequency corresponding to the terahertz frequency band; ω′=2πf.sub.2, f.sub.2 represents a frequency in the terahertz frequency band; R.sub.C represents a first parasitic capacitance value, and C.sub.C represents a first parasitic resistance value.
(57) The parameters in the three kinds of circuit models as shown in
(58) Optionally,
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The form is changed to obtain
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thus obtaining
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(62) That is, the parasitic capacitance value and the parasitic resistance value of the two-port on-wafer calibration piece circuit model are calculated according to
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where w′ represents an angular frequency corresponding to the terahertz frequency band; ω′=2πf.sub.2, f.sub.2 represents a frequency in the terahertz frequency band; C.sub.C′ represents a second parasitic capacitance value, and R.sub.C′ represents a second parasitic resistance value.
(64) The parameters in the three kinds of circuit models as shown in
(65) According to the method for determining the parameters in the two-port on-wafer calibration piece circuit model, the first S parameter is obtained by measuring the single-port on-wafer calibration piece circuit model corresponding to the first frequency band; the intrinsic capacitance value of the two-port on-wafer calibration piece circuit model corresponding to the one-port on-wafer calibration piece circuit model is calculated according to the first S parameter; the second S parameter is obtained by calculating the two-port on-wafer calibration piece circuit model corresponding to the terahertz frequency band; and the parasitic capacitance value and the parasitic resistance value of the two-port on-wafer calibration piece circuit model are calculated according to the second S parameter and the intrinsic capacitance value. The various two-port on-wafer calibration piece circuit models provided by the embodiments of the present disclosure reduce calibration and measurement errors caused by imperfection of the original single-port calibration piece circuit model in the terahertz frequency band and improves the test accuracy of on-wafer S parameters in the terahertz frequency band. In addition, the embodiments of the present disclosure further provide a method for calculating parameters in the two-port on-wafer calibration piece circuit model.
(66) It should be understood that the serial numbers of all the steps in the above embodiment do not mean the order of execution. The order of execution of the all processes shall be determined by their functions and an internal logic, and shall not constitute any limitations to the implementation processes of the embodiments of the present application.
(67) The above-mentioned embodiments are only used to illustrate the technical solutions of the present application, not intended to limit them. Although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they still can modify the technical solutions recorded in all the foregoing embodiments, or replace partial technical features by equivalences. These modifications or replacements do not cause the essences of the corresponding technical solutions to depart from the spirit and scope of the technical solutions of all the embodiments of the present application, and shall fall within the protection scope of the present application.