ORGANOMETALLIC COMPOUND, PRECURSOR COMPOSITION COMPRISING SAME, AND METHOD FOR MANUFACTURING THIN FILM USING SAME

Abstract

The present invention relates to a vapor deposition compound capable of being deposited as a thin film through vapor deposition and, in particular, to: an organometal-containing compound which can be applied to an atomic layer deposition (ALD) method or a chemical vapor deposition (CVD) method and has excellent reactivity, volatility, and thermal stability; a precursor composition comprising the organometallic compound; a method for manufacturing a thin film using the precursor composition; and an organometal-containing thin film manufactured using the precursor composition.

Claims

1. An organometallic compound represented by the following Chemical Formula 1: ##STR00013## in Chemical Formula 1, M is Mn, Cu, Co, Fe, or Ni; a is 2; b is 1 or 2 (provided that when M is Co, b is not 2); R.sub.1 and R.sub.2 are each independently hydrogen or a linear or branched alkyl group having 1 to 4 carbon atoms; R.sub.3 is —OR.sub.4 or —NR.sub.5R.sub.6; R.sub.4 is hydrogen or a linear or branched alkyl group having 1 to 4 carbon atoms; and R.sub.5 and R.sub.6 are each independently hydrogen, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched alkylsilyl group having 1 to 6 carbon atoms.

2. The organometallic compound of claim 1, wherein R.sub.1, R.sub.2, and R.sub.4 are each independently any one selected from the group consisting of hydrogen, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, and a tert-butyl group.

3. The organometallic compound of claim 1, wherein R.sub.5 and R.sub.6 are each independently any one selected from the group consisting of hydrogen, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, a tert-butyl group, a methylsilyl group, a dimethylsilyl group, a trimethylsilyl group, and a triethylsilyl group.

4. A precursor composition for vapor deposition comprising the organometallic compound according to claim 1.

5. A method for manufacturing a thin film, the method comprising a step of introducing the precursor composition for vapor deposition according to claim 4 into a chamber.

6. The method of claim 5, wherein the method for manufacturing a thin film includes an atomic layer deposition (ALD) method or a chemical vapor deposition method (CVD) method.

7. The method of claim 5, further comprising a step of injecting one or more selected from hydrogen (H.sub.2), a compound containing oxygen (O) atoms, a compound containing nitrogen (N) atoms, or a compound containing silicon (Si) atoms as a reaction gas.

8. The method of claim 7, wherein the reaction gas is any one or more selected from water (H.sub.2O), oxygen (O.sub.2), hydrogen (H.sub.2), ozone (O.sub.3), ammonia (NH.sub.3), hydrazine (N.sub.2H.sub.4), or silane.

9. An organometal-containing thin film manufactured using the precursor composition for vapor deposition according to claim 4.

Description

DESCRIPTION OF DRAWINGS

[0021] FIG. 1 is a thermal gravimetric-differential thermal analysis (TGDTA) graph of the Mn(MeMeIz).sub.2(.sup.secBuO).sub.2 compound of Example 1 of the present application.

[0022] FIG. 2 is a thermal gravimetric-differential thermal analysis (TGDTA) graph of the Mn(MeEtIz).sub.2(.sup.secBuO).sub.2 compound of Example 2 of the present application.

[0023] FIG. 3 is a thermal gravimetric-differential thermal analysis (TGDTA) graph of the Mn(MePrIz).sub.2(.sup.secBuO).sub.2 compound of Example 3 of the present application.

[0024] FIG. 4 is a thermal gravimetric-differential thermal analysis (TGDTA) graph of the Mn(MeMeIz).sub.2(btsa).sub.2 compound of Example 4 of the present application.

[0025] FIG. 5 is a thermal gravimetric-differential thermal analysis (TGDTA) graph of the Mn(MeEtIz).sub.2(btsa).sub.2 compound of Example 5 of the present application.

[0026] FIG. 6 is a thermal gravimetric-differential thermal analysis (TGDTA) graph of the Mn(MePrIz).sub.2(btsa).sub.2 compound of Example 6 of the present application.

BEST MODE FOR CARRYING OUT THE INVENTION

[0027] Hereinafter, embodiments and examples of the present application will be described in detail so that those skilled in the art to which the present invention pertains can easily practice the present invention. However, the present application may be embodied in many different forms and is not limited to the embodiments and examples described herein.

[0028] The present invention relates to a novel organometallic compound applicable to an atomic layer deposition method or a chemical vapor deposition method and having excellent reactivity, volatility, and thermal stability, a precursor composition comprising the organometallic compound, a method for manufacturing a thin film using the precursor composition, and an organometal-containing thin film manufactured from the precursor composition.

[0029] Throughout the present specification, the term “alkyl” includes linear or branched alkyl groups having 1 to 4 carbon atoms and all possible isomers thereof. For example, the alkyl group may include a methyl group (Me), an ethyl group (Et), an n-propyl group (.sup.nPr), an iso-propyl group (.sup.iPr), an n-butyl group (.sup.secBu), a tert-butyl group (.sup.tBu), an iso-butyl group (.sup.iBu), a sec-butyl group (.sup.secBu), and isomers thereof, and the like, but may not be limited thereto.

[0030] Throughout the present specification, the term “Iz” refers to an abbreviation of “imidazole” and the term “btsa” refers to an abbreviation of “[bis(trimethylsilyl)amide]”.

[0031] One aspect of the present application provides an organometallic compound represented by Chemical Formula 1 below.

##STR00002##

[0032] in Chemical Formula 1, M is Mn, Cu, Co, Fe, or Ni;

[0033] a is 2; b is 1 or 2 (provided that when M is Co, b is not 2):

[0034] R.sub.1 and R.sub.2 are each independently hydrogen or a linear or branched alkyl group having 1 to 4 carbon atoms; R.sub.3 is —OR.sub.4 or —NR.sub.5R.sub.6;

[0035] R.sub.4 is hydrogen or a linear or branched alkyl group having 1 to 4 carbon atoms;

[0036] It is preferable that R.sub.5 and R.sub.6 are each independently hydrogen, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched alkylsilyl group having 1 to 6 carbon atoms.

[0037] In one embodiment of the present application, more preferably R.sub.1, R.sub.2, and R.sub.4 may be each independently any one selected from the group consisting of hydrogen, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, and a tert-butyl group, but is not limited thereto.

[0038] In one embodiment of the present application, more preferably R.sub.5 and R.sub.6 may be each independently any one selected from the group consisting of hydrogen, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, a tert-butyl group, a methylsilyl group, a dimethylsilyl group, a trimethylsilyl group, and a triethylsilyl group, but is not limited thereto.

[0039] In one embodiment of the present application, the organometallic compound may be a liquid or a solid at room temperature, preferably a liquid, but is not limited thereto.

[0040] In one embodiment of the present application, the compound represented by Chemical Formula 1 above may be an M (Imidazole) (Alkoxide) compound represented by Chemical Formula 2 below.

##STR00003##

[0041] in Chemical Formula 2, M is Mn, Cu, Fe, or Ni; and it is preferable that R.sub.1, R.sub.2, and R.sub.4 are each independently hydrogen or a linear or branched alkyl group having 1 to 4 carbon atoms.

[0042] For example, it is more preferable that R.sub.1, R.sub.2, and R.sub.4 are each independently any one selected from the group consisting of hydrogen, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, and a tert-butyl group.

[0043] In one embodiment of the present application, the organometallic compound represented by Chemical Formula 2 above may be prepared through a reaction shown in Reaction Formula 1 below.

##STR00004##

[0044] In Reaction Formula 1, M is Mn, Cu, Fe, or Ni; X is a halogen element (e.g., Cl, Br, or I); R.sub.1, R.sub.2, and R.sub.4 are each independently hydrogen or a linear or branched alkyl group having 1 to 4 carbon atoms.

[0045] For example, examples of the Mn(Imidazole)(Alkoxide) compound in which the central metal (M) among the organic compounds represented by Chemical Formula 2 above is manganese may include the following manganese compounds, but are not limited thereto: [0046] di-sec-butoxy-bis(1,3-dimethyl-2,3-dihydro-1H-imidazol-2-yl)manganese [Mn(MeMeIz).sub.2(.sup.secBuO).sub.2]; [0047] di-sec-butoxy-bis(1-ethyl-3-methyl-2,3-dihydro-1H-imidazol-2-yl)manganese [Mn(MeEtIz).sub.2(.sup.secBuO).sub.2]; and [0048] di-sec-butoxy-bis(1-methyl-3-propyl-2,3-dihydro-1H-imidazol-2-yl)manganese [Mn(MePrIz).sub.2(.sup.secBuO).sub.2].

[0049] In one embodiment of the present application, the compound represented by Chemical Formula 1 above may be an M (Imidazole) (amide) compound characterized in that it is represented by Chemical Formula 3 below.

##STR00005##

[0050] in Chemical Formula 3, M is Mn, Cu, Fe, or Ni; R.sub.1 and R.sub.2 are each independently hydrogen or a linear or branched alkyl group having 1 to 4 carbon atoms; and it is preferable that R.sub.5 and R.sub.6 are each independently hydrogen, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched alkylsilyl group having 1 to 6 carbon atoms.

[0051] For example, it is more preferable that R.sub.1 and R.sub.2 are each independently any one selected from the group consisting of hydrogen, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, and a tert-butyl group; and it is more preferable that R.sub.5 and R.sub.6 are each independently any one selected from the group consisting of hydrogen, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, a tert-butyl group, a methylsilyl group, a dimethylsilyl group, a trimethylsilyl group, and a triethylsilyl group.

[0052] In one embodiment of the present application, the organometallic compound represented by Chemical Formula 3 above may be prepared through a reaction shown in Reaction Formula 2 below.

##STR00006##

[0053] In Reaction Formula 2, M is Mn, Cu, Fe, or Ni; X is a halogen element (e.g., Cl, Br, or I); R.sub.1 and R.sub.2 are each independently hydrogen or a linear or branched alkyl group having 1 to 4 carbon atoms; and R.sub.5 and R.sub.6 are each independently hydrogen, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched alkylsilyl group having 1 to 6 carbon atoms.

[0054] For example, examples of the Mn(imidazole)(amide) compound in which the central metal (M) among the organic compounds represented by Chemical Formula 3 above is manganese may include the following manganese compounds, but are not limited thereto: [0055] bis(bis(trimethylsilyl)amino)-bis(1,3-dimethyl-2,3-dihydro-1H-imidazol-2-yl)manganese [Mn(MeMeIz).sub.2(btsa).sub.2]; [0056] bis(bis(trimethylsilyl)amino)-bis(I-ethyl-3-methyl-2,3-dihydro-1H-imidazol-2-yl)manganese [Mn(MeEtIz)h(btsa).sub.2]; and [0057] bis(bis(trimethylsilyl)amino)-bis(1-methyl-3-propyl-2,3-dihydro-1H-imidazol-2-yl)manganese [Mn(MePrIz).sub.2(btsa)b].

[0058] Another aspect of the present application provides a precursor composition for vapor deposition comprising the organometallic compound.

[0059] Another aspect of the present application provides a method for manufacturing a thin film, the method comprising a step of introducing the precursor composition for vapor deposition into a chamber. The step of introducing the vapor deposition precursor into a chamber may include a step of performing physisorption, chemisorption, or physisorption and chemisorption.

[0060] Another aspect of the present application provides an organometal-containing thin film manufactured using the precursor composition for vapor deposition.

[0061] All the contents described for the organometallic compound may be applied to the precursor for vapor deposition, the method for manufacturing a thin film, and the organometal-containing thin film according to the present invention, and detailed descriptions of overlapping parts have been omitted, but they may be equally applied even if the descriptions have been omitted.

[0062] In one embodiment of the present application, the method for manufacturing a thin film may include both of an atomic layer deposition (ALD) method of sequentially introducing the vapor deposition precursor and the reaction gas of the present invention and a chemical vapor deposition (CVD) method in which a film is formed by injecting the vapor deposition precursor and the reaction gas of the present invention continuously.

[0063] More specifically, the deposition method may include Metal Organic Chemical Vapor Deposition (MOCVD), Low Pressure Chemical Vapor Deposition (LPCVD), Pulsed Chemical Vapor Deposition (P-CVD), Plasma Enhanced Atomic Layer Deposition method (PE-ALD), or combinations thereof, but is not limited thereto.

[0064] In one embodiment of the present application, the method for manufacturing a thin film may further include a step of injecting one or more reaction gases selected from hydrogen (H.sub.2), a compound (or mixture) containing oxygen (O) atoms, a compound (or mixture) containing nitrogen (N) atoms, or a compound (or mixture) containing silicon (Si) atoms as a reaction gas.

[0065] More specifically, at least one selected from water (H.sub.2O), oxygen (O.sub.2), hydrogen (H), ozone (O.sub.3), ammonia (NH.sub.3), hydrazine (N.sub.2H.sub.4) or silane may be used as the reaction gas, but is not limited thereto.

[0066] Specifically, water (H.sub.2O), oxygen (O.sub.2), and ozone (O.sub.3) may be used as reaction gases in order to deposit an organometallic oxide thin film, and ammonia (NH.sub.3) or hydrazine (N.sub.2H.sub.4) may be used as the reaction gas in order to deposit an organometallic nitride thin film.

[0067] Further, hydrogen (H.sub.2) may be used as a reaction gas in order to deposit a metal organometallic thin film, and compounds of silanes may be used as a reaction gas in order to deposit an organometallic silicide (MnSi or MnSi.sub.2) thin film.

[0068] The thin film manufactured by the method for manufacturing a thin film according to the present invention may be an organometallic metal thin film, an organometallic oxide thin film, an organometallic nitride thin film, or an organometallic silicide thin film, but is not limited thereto.

MODE FOR CARRYING OUT THE INVENTION

[0069] Hereinafter, the present invention will be described in more detail through Examples. However, the following Examples are intended to explain the present invention in more detail, and the scope of the present invention is not limited by the following Examples.

[Example 1] Synthesis of Mn(MeMeIz).SUB.2.(.SUP.sec.BuO).SUB.2

[0070] After MnCl.sub.2 (1 eq, 13 g), 1,3-dimethylimidazolium chloride (2 eq), potassium 2-butoxide (4 eq), and tetrahydrofuran (THF) were put into a Schlenk flask and stirred at room temperature overnight, the solvent was removed by performing filtration under reduced pressure when the reaction was finished. The obtained compound was distilled under reduced pressure at 70° C. and 0.3 Torr to obtain an orange liquid.

[0071] The thermal gravimetric-differential thermal analysis results of the compound [Mn(MeMeIz).sub.2(.sup.secBuO).sub.2] represented by Chemical Formula 2-1 below synthesized in Example 1 are shown in FIG. 1.

##STR00007##

[Example 2] Synthesis of Mn(MeEtIz).SUB.2.(.SUP.sec.BuO).SUB.2

[0072] After MnCl.sub.2 (1 eq, 13 g), 1-ethyl-3-methylimidazolium chloride (2 eq), potassium 2-butoxide (4 eq) and THF were put into a Schlenk flask and refluxed overnight, the solvent was removed by lowering the temperature to room temperature and performing filtration under reduced pressure when the reaction was finished. The obtained compound was distilled under reduced pressure at 70° C. and 0.2 Torr to obtain an orange liquid.

[0073] The thermal gravimetric-differential thermal analysis results of the compound [Mn(MeEtIz).sub.2(.sup.secBuO).sub.2] represented by Chemical Formula 2-2 below synthesized in Example 2 are shown in FIG. 2.

##STR00008##

[Example 3] Synthesis of Mn(MePrIz).SUB.2.(.SUP.sec.BuO).SUB.2

[0074] After MnCl.sub.2 (1 eq, 13 g), 1-methyl-3-propylimidazolium chloride (2 eq), potassium 2-butoxide (4 eq), and THF were put into a Schienk flask and stirred at room temperature overnight, the solvent was removed by performing filtration under reduced pressure when the reaction was finished. The obtained compound was distilled under reduced pressure at 65° C. and 0.2 Torr to obtain an orange liquid.

[0075] The thermal gravimetric-differential thermal analysis results of the compound [Mn(MePrIz).sub.2(.sup.secBuO).sub.2] represented by Chemical Formula 2-3 below synthesized in Example 3 are shown in FIG. 3.

##STR00009##

[Example 4] Synthesis of Mn(MeMeIz).SUB.2.(btsa).SUB.2

[0076] After MnCl.sub.2(1 eq, 3 g), 1,3-dimethylimidazolium chloride (2 eq), potassium bis-trimethylsilylamide (4 eq), and THF were put into a Schlenk flask and refluxed overnight, the solvent was removed by lowering the temperature to room temperature and performing filtration under reduced pressure when the reaction was finished. The obtained compound was sublimed at 90° C. and 1 Torr to obtain a yellow brown solid.

[0077] The thermal gravimetric-differential thermal analysis results of the compound [Mn(MeMeIz).sub.2(btsa).sub.2] represented by Chemical Formula 3-1 below synthesized in Example 4 are shown in FIG. 4.

##STR00010##

[Example 5] Synthesis of Mn(MeEtIz).SUB.2.(btsa).SUB.2

[0078] After MnCl.sub.2 (1 eq, 3 g), 1-ethyl-3-methylimidazolium chloride (2 eq), potassium bis-trimethylsilylamide (4 eq), and THF were put into a Schlenk flask and refluxed overnight, the solvent was removed by lowering the temperature to room temperature and performing filtration under reduced pressure when the reaction was finished. The obtained compound was distilled at 80° C. and 0.4 Torr to obtain an orange liquid.

[0079] The thermal gravimetric-differential thermal analysis results of the compound [Mn(MeEtIz).sub.2(btsa).sub.2] represented by Chemical Formula 3-2 below synthesized in Example 5 are shown in FIG. 5.

##STR00011##

[Example 6] Synthesis of Mn(MePrIz).SUB.2.(btsa).SUB.2

[0080] After MnCl.sub.2 (1 eq, 3 g), 1-methyl-3-propylimidazolium chloride (2 eq), potassium bis-trimethylsilylamide (4 eq), and THF were put into a Schlenk flask and refluxed overnight, the solvent was removed by lowering the temperature to room temperature and performing filtration under reduced pressure when the reaction was finished. The obtained compound was distilled at 60° C. and 0.4 Torr to obtain an orange liquid.

[0081] The thermal gravimetric-differential thermal analysis results of the compound [Mn(MePrIz).sub.2(btsa).sub.2] represented by Chemical Formula 3-3 below synthesized in Example 6 are shown in FIG. 6.

##STR00012##

[Manufacturing Example 1] Manufacturing of Manganese-Containing Thin Film Using Atomic Layer Deposition (ALD) Method

[0082] A manganese thin film was manufactured by alternately supplying any one novel manganese precursor of Examples 1 to 6 and a reaction gas including oxygen (O.sub.2) onto a substrate. After supplying the precursor and the reaction gas, the precursor and reaction gas remaining in a deposition chamber were purged by supplying argon that is a purge gas, respectively. The supply time of the precursor was adjusted to 8 to 15 seconds, and the supply time of the reaction gas was also adjusted to 8 to 15 seconds. The pressure of the deposition chamber was adjusted to 1 to 20 Torr, and the deposition temperature was adjusted to 80 to 300° C.

[0083] Existing organometallic compounds have been difficult to use as precursors due to their disadvantage of being instable at room temperature. In contrast, the novel manganese precursor containing an imidazole ligand according to the present invention has advantages that it has relatively high thermal stability and high reactivity with an oxidative reaction gas at the same time.

[0084] Further, uniform thin film deposition is possible through the novel organometallic precursor containing an imidazole ligand according to the present invention, and thus excellent thin film properties, thickness and step coverage can be secured.

[0085] The scope of the present invention is indicated by the claims described later rather than the detailed description described above, and all changes or modified forms derived from the meaning and scope of the claims and equivalent concepts thereof should be interpreted as being included in the scope of the present invention.

INDUSTRIAL APPLICABILITY

[0086] The present invention relates to a vapor deposition compound capable of depositing a thin film through vapor deposition, and is specifically applicable to an atomic layer deposition method or a chemical vapor deposition method, and has excellent reactivity, volatility, and thermal stability.

[0087] Further, the precursor composition comprising the novel organometallic compound and the vapor deposition compound according to the present invention is a solid or low-viscosity liquid compound and has excellent volatility, enabling uniform thin film deposition, and has high thermal stability and reactivity to enable excellent thin film physical properties, thickness, and step coverage to be secured.

[0088] The physical properties as described above provide an organometal-containing precursor suitable for an atomic layer deposition method and a chemical vapor deposition method, and contribute to excellent thin film properties.