DEVICE AND METHOD TO PROVIDE PLANARITY OF A WAFER DURING GROWTH

Abstract

A device to ensure planarity of a semiconductor wafer during growth at an increased temperature in a growth chamber arranged in a reactor housing where the device includes a growth chamber having a port to allow the deposition of at least one wafer on a rotating susceptor in the growth chamber and the withdrawal of the wafer. The growth chamber has an inlet channel for a supply of process gases and an outlet channel for a discharge of not consumed process gases to create a process gas flow between said channels. Separate heaters are adjacent to the growth chamber to heat the rotating wafer with individually controlled heating zones both above and under the wafer. An instrument measures the bending of the wafer, and an automatic control circuit uses data from temperature sensors or measured data of power supplied to the heaters and the instrument measuring bending of the wafer to change the temperature in said temperature zones so that bending of the wafer is minimized.

Claims

1. Device to ensure planarity of a semiconductor wafer during growth at an increased temperature in a growth chamber arranged in a reactor housing where the device includes: a growth chamber having a port to allow the deposition of at least one wafer on a rotating susceptor in the growth chamber and the withdrawal of the wafer from the growth chamber, where the growth chamber further has an inlet channel for a supply of process gases and an outlet channel for a discharge of not consumed process gases in order to create a process gas flow between said channels, characterized in that: separate heaters VI-V6 are arranged adjacent to the growth chamber to heat the rotating wafer by means of individually controlled heating zones both above and under the wafer, an instrument is arranged to measure the bending of the wafer, an automatic control circuit is arranged to use data from any one of: a) temperature sensors measured data of the power to the heaters, and the instrument measuring bending of the wafer, and to change the temperature in said temperature zones so that bending of the wafer is minimized.

2. The device according to claim 1, where the heaters VI-V6 are positioned with three heaters VI-V3 below the growth chamber and with three heaters V4-V6 above the growth chamber.

3. The device according to claim 2, where the heaters VI-V6 are arranged in groups, whereby the growth chamber is heated at the inflow of the process gases into the growth chamber with the heaters V1 and V4 in a first group; a second heater group, V2 and V5, heat the growth chamber in its central part; while a third group of heaters, V3 and V6, heat the growth chamber at the process gases outflow from the growth chamber.

4. The device according to claim 1, where the wafer bending is measured by an instrument which calculates the bending by means of laser light sent towards the wafer and reflected from at least two points on the wafer surface.

5. The device according to claim 4, wherein the instrument is arranged to calculate an angle between a laser beam incident to the wafer and the laser beam reflected from the wafer at at least two points on the wafer and to calculate therefrom if bending of the wafer is present.

6. Method to ensure planarity of a semiconductor wafer during growth at an increased temperature in a growth chamber according to claim 1, comprising the steps of: bending of the wafer is measured by an instrument sending laser beams towards the wafer, an automatic control circuit adjusts the supply of energy to one or some of the heaters to counteract initiated measured bending.

7. The method according to claim 6, further comprising the step of: individual heaters VI-V6 are controlled individually with respect to energy supply to them.

8. The method according to claim 7, further including the step of: the temperature of the upper or lower part of the growth chamber is controlled by controlling the upper and lower heaters VI-V6 independently of one another.

9. The method according to claim 8, further including the step of: when indication at a bending measurement that the edges of the wafer are higher than the central parts thereof, the automatic control circuit ensures that the temperature is raised at the upper side of the wafer in the outer parts thereof by means of increased energy supply to anyone of heaters located above the wafer at the outer parts thereof.

10. The method according to claim 9, further including the step of: when indication at a bending measurement that the edges of the wafer are lower than the central parts thereof, the automatic control circuit ensures that the temperature is raised at the lower side of the wafer in the outer parts thereof by means of increased energy supply to anyone of heaters located under the wafer at the outer parts thereof.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0013] FIG. 1 shows a schematic picture of the device according to the aspect of the invention.

[0014] FIG. 2 schematically illustrates a perspective view of a device according to the invention where the reactor, the growth chamber and the channels for the process gases are given in a longitudinal cross section through the growth chamber when the device is arranged in an exemplified reactor.

[0015] FIG. 3 shows a longitudinal cross section through the growth chamber according to FIG. 2, wherein now the locations of the heaters in relation to growth chamber and wafer are depicted.

[0016] FIG. 4 shows in a plan view from above the lower half of the growth chamber according to FIG. 3, wherein susceptor, wafer and the groups of heaters under the growth chamber appear.

DESCRIPTION OF EMBODIMENTS

[0017] In the following, a number of embodiments of the invention will be described by reference to the accompanying drawings. The drawings show the principle of the invention only schematically and do not claim to show any proportions between different elements thereof according to scale.

[0018] An embodiment of a device according to the invention is presented here. As mentioned, a configuration of a growth chamber and channels for process gases can be designed in different ways. By adapting the elements shown in the embodiment presented herein to other designs of reactors the principle for the present invention can be transferred to these.

[0019] FIG. 1 shows only the inner elements being used in a reactor for growing layers of a semiconductor material on a wafer. The depicted example of the device is used in a reactor for growing gallium nitride on silicon. This type of growth requires very high temperatures, usually between 900 and 1500 degrees Celsius, whereby the defects in the crystal material discussed above may arise. The device according to the invention is referred to as 1. In this, a susceptor 2 being arranged to rotate around a shaft 3 is illustrated. On the susceptor 2 a wafer 4 is positioned, whereby the wafer rotates together with the susceptor. The growth of a semiconductor material occurs on the upper side of the wafer 4. In the figure, process gases being used for the growth of the semiconductor material are shown flowing from left in a horizontal direction towards an outlet to the right in the figure. The process gas flow is referred to by reference number 5. Heaters are arranged both below and above the susceptor 2, in the illustrated example arranged as 6 different heaters being denoted by V1, V2, V3, V4, V5, V6. The heaters are as an example produced as graphite elements. The bending of the wafer is measured, as mentioned, by means of laser light 6 which is directed in between the heaters towards at least one slightly central point of the wafer and one slightly peripheral point of the wafer, though with a very small distance between said points.

[0020] The device 1 is shown, very schematically, inside a reactor 10 in FIG. 2, where the reactor is configured with a cylindrical housing being designed with a bottom 11, lid 12 and cylindrical wall 13. A reactor according to FIG. 2 is usually made by stainless steel. The figure depicts a cross section through the reactor 10, whereby inside this a growth chamber 14 opened into a longitudinal cross section is easily revealed. The growth chamber is made by a very heat resistant material. The growth chamber 14 can herein be found with a bottom 15 and an upper wall 16. The susceptor 2 is shown submerged into the bottom 15 of the growth chamber, where it is rotatably arranged in the same plane as the susceptor. The reactor 10 has a port for supply of process gases, which are let into the growth chamber 14 via an inlet channel 17, where the process gases are symbolized by means of an arrow inside the inlet channel 17. Further, the reactor 10 has a port for the export of unused process gases, where these are let out via an outlet channel 18 from the growth chamber 14. In this outlet channel 18 this flow of unused process gases is shown by an arrow inside the outlet channel 18. The heaters V1-V6 are for the sake of clarity not shown in FIG. 2.

[0021] A heater configuration V1-V6 arranged in the device 1 applied in reactor 10 according to the example in FIG. 2 is visualized in FIG. 3. It can be understood from this figure that 3 groups of heaters are disposed by heaters both below the bottom 15 and above the upper wall 16 of the growth chamber. The heaters V1-V6 are organized in groups. The growth chamber is thus heated upon the inflow of the process gases into the growth chamber by means of heaters V1 and V4 of a first group. A second group of heaters, V2 and V5, heats the growth chamber 14 in its central part, while a third group of heaters, V3 and V6, heats the growth chamber at the outflow of process gases from the growth chamber. The process gases are here denoted by 5 at the arrows. Hereby, the placement of these heaters V1-V6 at different positions in relation to the extent of the growth chamber 14 lengthwise, supply of heat to the centre part of the wafer 4 and its peripheral parts can be controlled and varied independent of each other in that the heater groups are individually controlled with respect to supply of energy to these. The temperature of upper or lower part of the growth chamber 14 can also be controlled at the respective heater group by the control of upper and lower heater of a heater group independent of each other. The heaters V1-V6 are in the embodiment configured by graphite elements.

[0022] FIG. 4 shows the bottom 15 of the growth chamber 14 in a plan view from above. Here it can be clearly read how the different heater groups heat different parts of the growth chamber 14 and thus demonstrates how changes of supply of heat to wafer 4 is established. An automatic control circuit (not shown) detects bending values and thereafter controls feeding of energy to the heaters V1-V6, whereupon a supervised temperature profile is accomplished across the whole surface of the wafer 4 in order to maintain a planar wafer. If, for example measures of bending of a wafer positioned on the susceptor 2 indicate that the edges of the wafer 4 are higher than the central parts of the wafer the automatic control circuit will rise the temperature on the upper side of the wafer at the outer parts thereof, whereby bending of the edges of the wafer upwards will be counteracted. This is accomplished through increased energy supply in heaters V4 and V6 or by lowered energy supply via the heaters V1 and V3.

[0023] There is illustrated in FIG. 3 how laser light according to the prior art measurement method is directed towards a position on the wafer. By measuring the angle created between the light beam incident on the wafer and the reflected beam according to reference 6 and comparison with the corresponding angle for another light beam directed to a different position on the wafer any bending of the wafer can be determined and thus counteracted by automatic adjustment of energy supply to the different heaters. This control is carried out via said control circuit. Bending values are obtained by the measurement method.

[0024] The measurement of temperatures is made by an optical method (use of pyrometers). There is one temperature sensor 20 in the form of a pyrometer for each heater. The pyrometer measures perpendicularly to the direction of the flow of the gases. The pyrometer is located outside the growth chamber and measures through an optical window. This is illustrated by arrows from the temperature sensors 20 that are outside the growth chamber. The measurement is not done directly against the heater but against the bottom (15) and the upper wall (16).

[0025] Instead of measuring the temperature in the growth chamber, data regarding the applied power to the heaters can be determined. Measured power data are hereby used as a control means for the control circuit together with bending values.

[0026] The electric energy supplied to the heaters V1-V6 is introduced through the outer cylindrical wall 13 of the reactor 10 via vacuum-tight electrical bushings. These bushings further keep the heaters on their locations. Between the heaters and the cold outer wall there is isolation that withstands the process gases and the high temperature inside the reactor.