Load Regulation for LDO with Low Loop Gain
20220140791 · 2022-05-05
Inventors
Cpc classification
H03F2203/45026
ELECTRICITY
G05F1/468
PHYSICS
H03M1/747
ELECTRICITY
International classification
H03F1/30
ELECTRICITY
G05F1/46
PHYSICS
Abstract
Circuits and methods for maintaining loop stability and good load regulation in low loop gain LDO regulator circuits. Embodiments encompass LDO regulator circuits that include an offset error correction circuit that generates an opposing voltage V.sub.OFFSET as a function of load current to substantially cancel out variations in V.sub.OUT that would otherwise occur due to load regulation limitations of the LDO regulator circuits. Embodiments use V.sub.OFFSET to imbalance currents in differential paths in a last-stage LDO error-amplifier so that an offset is propagated to a pair of inputs to the error-amplifier, thereby altering the output voltage V.sub.OUT to a corrected value. Benefits include improved LDO load regulation even when feedback loop gain is low, the available of both digital and analog implementations, high LDO accuracy and less variation of the output voltage V.sub.OUT, and suitability for implementation in integrated circuits for applications such as high precision power supplies.
Claims
1. An offset error correction circuit configured to be coupled to a low-dropout (LDO) regulator circuit that includes a feedback loop, an input for a voltage, and an output for a regulated voltage V.sub.OUT, the offset error correction circuit configured to generate an offset correction signal as a function of a load current I.sub.LOAD through the coupled LDO regulator circuit, the offset correction signal being provided to the coupled LDO regulator circuit so as to adjust the open-loop gain of the coupled LDO regulator circuit.
2. A low-dropout (LDO) regulator circuit including an input for a voltage, an output for a regulated voltage V.sub.OUT, and an offset error correction circuit that generates an offset current I.sub.OFFSET as a function of a load current I.sub.LOAD through the LDO regulator circuit, wherein the offset current I.sub.OFFSET produces a correction signal V.sub.OFFSET that substantially offsets variations in the regulated voltage V.sub.OUT due to closed-loop operation of the LDO regulator circuit.
3. The invention of claim 2, wherein the variations in the regulated voltage V.sub.OUT result from a low loop gain of the LDO regulator circuit.
4. The invention of claim 2, wherein the LDO regulator circuit includes a first stage that includes the input for the voltage and a second stage that outputs the regulated voltage V.sub.OUT, wherein the offset error correction circuit is coupled to sense the load current I.sub.LOAD through the input of the first stage.
5. The invention of claim 2, wherein the LDO regulator circuit includes a first stage that includes the input for the voltage and a second stage that outputs the regulated voltage V.sub.OUT, wherein the offset current I.sub.OFFSET generated by the offset error correction circuit is applied to the second stage to generate the correction signal V.sub.OFFSET.
6. The invention of claim 2, wherein the LDO regulator circuit includes a first stage that includes the input for the voltage and a second stage that outputs the regulated voltage V.sub.OUT, wherein the offset current I.sub.OFFSET generated by the offset error correction circuit is applied to the second stage and summed with currents flowing through a differential error amplifier circuit so as to substantially offset variations in the regulated voltage V.sub.OUT due to closed-loop operation of the LDO regulator circuit.
7. The invention of claim 2, wherein the LDO regulator circuit includes a first loop that includes the input for the voltage and a second loop that outputs the regulated voltage V.sub.OUT, wherein the offset error correction circuit is coupled to sense the load current I.sub.LOAD through the input of the first loop, and wherein the offset current I.sub.OFFSET generated by the offset error correction circuit is applied to the second loop to generate the correction signal V.sub.OFFSET.
8. The invention of claim 2, wherein the LDO regulator circuit further includes an error amplifier having a first differential input and a second differential input controlling the generation of the regulated voltage V.sub.OUT, the first differential input configured to pass a current reduced by the offset current I.sub.OFFSET and the second differential input configured to pass a current increased by the offset current I.sub.OFFSET.
9. The invention of claim 2, wherein the offset error correction circuit includes: (a) a sense field effect transistor (FET) configured to sense the load current I.sub.LOAD through the LDO regulator circuit and generate a sense current I.sub.SENSE as a function of the load current I.sub.LOAD; and (b) an offset current generator, coupled to the sense FET, configured to generate the offset current I.sub.OFFSET as a function of the sense current I.sub.SENSE.
10. The invention of claim 9, wherein the offset current generator includes: (a) a current transform circuit coupled to the sense FET and configured to convert the sense current I.sub.SENSE to a sense voltage V.sub.SENSE; (b) an analog-to-digital converter coupled to the current transform circuit and configured to convert a magnitude of the sense voltage V.sub.SENSE to a digital value comprising N bits; and (c) a digital-to-analog converter current generator coupled to the analog-to-digital converter and configured to convert the digital value comprising N bits to the offset current I.sub.OFFSET.
11. The invention of claim 9, wherein the offset current generator includes a current mirror circuit coupled to the sense FET and configured to amplify the sense current I.sub.SENSE to the offset current I.sub.OFFSET.
12. A low-dropout (LDO) regulator circuit including: (a) an input for a voltage; (b) an output for a regulated voltage V.sub.OUT; (c) an offset error correction circuit that generates an offset current I.sub.OFFSET as a function of a load current I.sub.LOAD through the LDO regulator circuit; (d) voltage regulation circuitry including an error amplifier having a first differential input and a second differential input controlling the generation of the regulated voltage V.sub.OUT, the first differential input configured to pass a current reduced by the offset current I.sub.OFFSET and the second differential input configured to pass a current increased by the offset current I.sub.OFFSET, thereby substantially cancelling out variations in V.sub.OUT that would otherwise occur due to load regulation limitations of the LDO regulator circuit.
13. The invention of claim 12, wherein the offset error correction circuit includes: (a) a sense field effect transistor (FET) configured to sense the load current I.sub.LOAD through the LDO regulator circuit and generate a sense current I.sub.SENSE as a function of the load current I.sub.LOAD; and (b) an offset current generator, coupled to the sense FET, configured to generate the offset current I.sub.OFFSET as a function of the sense current I.sub.SENSE.
14. The invention of claim 13, wherein the offset current generator includes: (a) a current transform circuit coupled to the sense FET and configured to convert the sense current I.sub.SENSE to a sense voltage V.sub.SENSE; (b) an analog-to-digital converter coupled to the current transform circuit and configured to convert a magnitude of the sense voltage V.sub.SENSE to a digital value comprising N bits; and (c) a digital-to-analog converter current generator coupled to the analog-to-digital converter and configured to convert the digital value comprising N bits to the offset current I.sub.OFFSET.
15. The invention of claim 13, wherein the offset current generator includes a current mirror circuit coupled to the sense FET and configured to convert the sense current I.sub.SENSE to the offset current I.sub.OFFSET.
16.-25. (canceled)
Description
DESCRIPTION OF THE DRAWINGS
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[0036] Like reference numbers and designations in the various drawings indicate like elements.
DETAILED DESCRIPTION
[0037] The present invention encompasses circuits and methods for maintaining loop stability and good load regulation in LDO regulator circuits having a low loop gain.
[0038] High frequency (e.g., around 1 MHz) low drop-out (LDO) regulator circuits having a high PSRR are generally designed to have feedback loops that have higher Unity Gain Bandwidths (UGB) around their highest frequency. For example,
[0039] A design challenge for LDO regulator circuits is that low loop gains limit the ability of a conventional feedback loop to correct errors in the output due to load variations—that is, conventional LDO regulator circuits with low loop gains generally have low load regulation capability.
[0040] For example,
[0041] In Equation 1, “ro_pass2” is the small-signal resistance between the drain and the source of a MOSFET due to a channel-length modulation effect when the transistor is in saturation, and Aβ is the LDO Stage 2 loop gain, where “A” is the feedforward gain of the feedback loop, and β is the feedback ratio and is less than one. Further, V.sub.OUT=(V.sub.REF2/β)−I.sub.LOAD*R.sub.OUT.
[0042]
[0043] One goal of the present invention is to achieve good load regulation capability for LDO regulator circuits having low loop gains. Embodiments of the present invention encompass LDO regulator circuits that include an offset error correction circuit that generates an opposing voltage V.sub.OFFSET as a function of load current I.sub.LOAD to substantially cancel out variations in V.sub.OUT that would otherwise occur due to load regulation limitations of the LDO regulator circuits.
[0044] For example,
[0045]
[0046] A number of circuits can be used to monitor LOAD and generate V.sub.OFFSET in a low loop gain LDO regulator circuit. For example,
[0047] In the illustrated example, the error correction circuit includes a sense FET Msense coupled in parallel with the Stage 1 FET M1. The sense FET Msense may be, for example, a MOSFET, and typically would be quite small compared to FET M1; for example, 1/1000 of the size and the current characteristic of the FET M1. Accordingly, the presence of the sense FET Msense has little or no effect on the overall operation of the low loop gain LDO regulator circuit 601. In the illustrated example, the gate of the sense FET Msense is controlled by the Stage 1 error amplifier 204. A fractional current I.sub.SENSE proportional to the load current I.sub.LOAD passing through the Stage 1 FET M1 (more generally, through the main pass transistor if a more complex Stage 1 circuit is used) passes through the parallel FET Msense to an Offset Current Generator 602.
[0048] The Offset Current Generator 602, another part of the error correction circuit, generates an offset current I.sub.OFFSET from I.sub.SENSE. As described in greater detail below, the Offset Current Generator 602 may be implemented as a digital circuit and/or an analog circuit. The offset current I.sub.OFFSET is coupled to another part of the error correction circuit, a modified error amplifier 608 within Stage 2 of the low loop gain LDO regulator circuit 601.
[0049] In one embodiment, the modified error amplifier 608 uses the offset current I.sub.OFFSET to imbalance the input current to a pair of transistors to create a voltage offset V.sub.OFFSET between the voltages, V.sub.REF2 and V.sub.OUT, applied to the transistor gate inputs. The polarity of the voltage offset V.sub.OFFSET is in the opposite direction from the uncorrected value of V.sub.OUT to reduce the variation in the final, post-correction V.sub.OUT due to load regulation limitations of the low loop gain LDO regulator circuit 601. Thus, V.sub.OFFSET=f(I.sub.OFFSET)=f(I.sub.SENSE)=f(I.sub.LOAD).
[0050]
[0051] The modified error amplifier 608 is configured as a two-stage differential amplifier, each stage comprising two legs. A first leg of the first stage comprises FETs M.sub.EA1 and M.sub.EA2, with FET M.sub.EA3 functioning as a current source. FETs M.sub.OUT and M.sub.EA2 are configured in a folded cascode arrangement, with FET M.sub.EA1 providing bias current. A second leg of the first stage comprises FETs M.sub.EA4 and M.sub.EA5, with FET M.sub.EA6 functioning as a current source. FETs M.sub.REF and M.sub.EA5 are also configured in a folded cascode arrangement, with FET M.sub.EA4 providing bias current.
[0052] A first leg of the second stage comprises FETs MEAT and M.sub.EA8 coupled to a second current source 704, and a second leg of the second stage comprises FETs M.sub.EA9 and M.sub.EA10 coupled to a third current source 706. The first and second legs of the second stage are configured as a current mirror having inputs coupled to respective nodes after the cascode pairs of the first and second legs of the first stage. The differential FETs M.sub.REF and M.sub.OUT are coupled to respective nodes between the cascode pairs of the first and second legs of the first stage.
[0053] An essentially constant current through FET MEAL is shared between FET M.sub.OUT and the path through FETs M.sub.EA2 and M.sub.EA3. Similarly, an essentially constant current through FET M.sub.EA4 is shared between FET M.sub.REF and the path through FETs M.sub.EA5 and M.sub.EA6. The output of the M.sub.EA1/M.sub.EA2 cascode pair influences the current through the first leg of the second stage, while the output of the M.sub.EA4/M.sub.EA5 cascode pair influences the current through the second leg of the second stage.
[0054] In steady-state operation (i.e., V.sub.REF2=V.sub.OUT) and ignoring any contribution by the offset current generator 602 for the moment, the currents through the differential FETs M.sub.REF and M.sub.OUT are equal. However, if (for example) V.sub.OUT becomes less than V.sub.REF2, then the current through FET M.sub.OUT will be reduced by an amount A, resulting in an offsetting increase of current through FET M.sub.EA2 in the first leg of the first stage by A. The reduced current through FET M.sub.OUT by Δ will result in an offsetting increase of current through FET M.sub.REF by A. As a result, the current through FET M.sub.EA5 in the second leg of the first stage will decrease by A. The imbalance of currents in the first stage will propagate to the second stage, resulting in a decrease in EA_V.sub.OUT.
[0055] Taking into account the offset current generator 602, the basic idea is to imbalance currents in any differential path so that an offset is propagated to the pair of inputs V.sub.REF2 and V.sub.OUT, thus altering the output voltage EA_V.sub.OUT to a corrected value. The imbalance of currents through the input pair of transistors M.sub.REF and M.sub.OUT results in those transistors having different V.sub.GS values, which creates an offset V.sub.OFFSET=V.sub.GS_MOUT−V.sub.GS_MREF=f(I.sub.OFFSET). In the illustrated example, FETs M.sub.EA1-M.sub.EA3, when suitably biased, provide a current through the FET M.sub.OUT that is equal to one-half of I.sub.TAIL, plus I.sub.OFFSET from the current generator 602. FETs M.sub.EA4-M.sub.EA6, when suitably biased, provide a current through the FET M.sub.REF that is equal to one-half of I.sub.TAIL, minus I.sub.OFFSET from the current generator 602. Note that bias circuitry is not shown for to avoid clutter.
[0056] In greater detail, the offset current generator 602 is coupled to the respective second legs of the first and second stages as shown, and accordingly can influence the current flow through those legs. When the offset current generator 602 generates I.sub.OFFSET, that amount of current is subtracted from the current passing through FET M.sub.REF, and accordingly, that amount of current is added to the current passing through the FET M.sub.OUT, so that while the total current through differential FETs M.sub.REF and M.sub.OUT remains equal to I.sub.TAIL, an imbalance of currents exists through the input pair of transistors M.sub.REF and M.sub.OUT.
[0057] Of note, the point of connection of the current generator 602 is preferably chosen to be a relatively low impedance point so that loading by the circuitry generating I.sub.OFFSET does not affect pole locations within the low loop gain LDO regulator circuit 601 and the loop remains stable.
[0058]
[0059] In the illustrated example, the N bits from the ADC 804 may be applied to a digital-to-analog converter (DAC) current generator 806 to generate I.sub.OFFSET as a function of I.sub.SENSE.
[0060] In alternative embodiments, V.sub.SENSE may be used directly within the modified error amplifier 608 to imbalance currents in any differential path so that an offset is propagated to the pair of inputs V.sub.REF2 and V.sub.OUT, thus altering the output voltage EA_V.sub.OUT to a corrected value. For example V.sub.SENSE may be used to bias the differential FETs M.sub.REF and M.sub.OUT so as to create a difference in the V.sub.GS of those FETs and thereby alter the flow of current through them to correct the load-induced error in V.sub.OUT that would otherwise occur.
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[0064] Benefits of embodiments of the invention include improved LDO load regulation even when feedback loop gain is low (noting that the error correction circuitry described above can be used with high-gain LDO regulator circuits), the available of both digital and analog implementations, high LDO accuracy and less variation of the output voltage V.sub.OUT, and suitability for implementation in integrated circuits (ICs) for applications such as high precision power supplies.
[0065] Methods
[0066] Another aspect of the invention includes methods for maintaining loop stability and good load regulation in a low-dropout (LDO) regulator circuit. For example,
[0067] As another example,
[0068] Additional aspects of the above method may include one or more of the following: wherein the LDO regulator circuit is a low loop gain LDO regulator circuit; wherein the LDO regulator circuit further includes an error amplifier having a first differential input and a second differential input controlling the generation of the regulated voltage V.sub.OUT, further including applying the offset current I.sub.OFFSET to the first differential input so that the first differential input passes a current reduced by the offset current I.sub.OFFSET, and applying the offset current I.sub.OFFSET to the second differential input so that the second differential input passes a current increased by the offset current I.sub.OFFSET; wherein generating the offset current I.sub.OFFSET includes configuring a sense field effect transistor (FET) to sense the load current I.sub.LOAD through the LDO regulator circuit and generate a sense current I.sub.SENSE as a function of the load current I.sub.LOAD, and configuring an offset current generator, coupled to the sense FET, to generate the offset current I.sub.OFFSET as a function of the sense current I.sub.SENSE; wherein the offset current generator includes a current transform circuit coupled to the sense FET and configured to convert the sense current I.sub.SENSE to a sense voltage V.sub.SENSE, an analog-to-digital converter coupled to the current transform circuit and configured to convert a magnitude of the sense voltage V.sub.SENSE to a digital value comprising N bits, and a digital-to-analog converter current generator coupled to the analog-to-digital converter and configured to convert the digital value comprising N bits to the offset current I.sub.OFFSET; and/or wherein the offset current generator includes a current mirror circuit coupled to the sense FET and configured to amplify the sense current I.sub.SENSE to the offset current I.sub.OFFSET.
[0069] Fabrication Technologies & Options
[0070] The term “MOSFET”, as used in this disclosure, includes any field effect transistor (FET) having an insulated gate whose voltage determines the conductivity of the transistor, and encompasses insulated gates having a metal or metal-like, insulator, and/or semiconductor structure. The terms “metal” or “metal-like” include at least one electrically conductive material (such as aluminum, copper, or other metal, or highly doped polysilicon, graphene, or other electrical conductor), “insulator” includes at least one insulating material (such as silicon oxide or other dielectric material), and “semiconductor” includes at least one semiconductor material.
[0071] As used in this disclosure, the term “radio frequency” (RF) refers to a rate of oscillation in the range of about 3 kHz to about 300 GHz. This term also includes the frequencies used in wireless communication systems. An RF frequency may be the frequency of an electromagnetic wave or of an alternating voltage or current in a circuit.
[0072] Various embodiments of the invention can be implemented to meet a wide variety of specifications. Unless otherwise noted above, selection of suitable component values is a matter of design choice. Various embodiments of the invention may be implemented in any suitable integrated circuit (IC) technology (including but not limited to MOSFET structures), or in hybrid or discrete circuit forms. Integrated circuit embodiments may be fabricated using any suitable substrates and processes, including but not limited to standard bulk silicon, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS). Unless otherwise noted above, embodiments of the invention may be implemented in other transistor technologies such as bipolar, BiCMOS, LDMOS, BCD, GaAs HBT, GaN HEMT, GaAs pHEMT, and MESFET technologies. However, embodiments of the invention are particularly useful when fabricated using an SOI or SOS based process, or when fabricated with processes having similar characteristics. Fabrication in CMOS using SOI or SOS processes enables circuits with low power consumption, the ability to withstand high power signals during operation due to FET stacking, good linearity, and high frequency operation (i.e., radio frequencies up to and exceeding 50 GHz). Monolithic IC implementation is particularly useful since parasitic capacitances generally can be kept low (or at a minimum, kept uniform across all units, permitting them to be compensated) by careful design.
[0073] Voltage levels may be adjusted, and/or voltage and/or logic signal polarities reversed, depending on a particular specification and/or implementing technology (e.g., NMOS, PMOS, or CMOS, and enhancement mode or depletion mode transistor devices). Component voltage, current, and power handling capabilities may be adapted as needed, for example, by adjusting device sizes, serially “stacking” components (particularly FETs) to withstand greater voltages, and/or using multiple components in parallel to handle greater currents. Additional circuit components may be added to enhance the capabilities of the disclosed circuits and/or to provide additional functionality without significantly altering the functionality of the disclosed circuits.
[0074] Circuits and devices in accordance with the present invention may be used alone or in combination with other components, circuits, and devices. Embodiments of the present invention may be fabricated as integrated circuits (ICs), which may be encased in IC packages and/or in modules for ease of handling, manufacture, and/or improved performance. In particular, IC embodiments of this invention are often used in modules in which one or more of such ICs are combined with other circuit blocks (e.g., filters, amplifiers, passive components, and possibly additional ICs) into one package. The ICs and/or modules are then typically combined with other components, often on a printed circuit board, to form an end product such as a cellular telephone, laptop computer, or electronic tablet, or to form a higher level module which may be used in a wide variety of products, such as vehicles, test equipment, medical devices, etc. Through various configurations of modules and assemblies, such ICs typically enable a mode of communication, often wireless communication.
CONCLUSION
[0075] A number of embodiments of the invention have been described. It is to be understood that various modifications may be made without departing from the spirit and scope of the invention. For example, some of the steps described above may be order independent, and thus can be performed in an order different from that described. Further, some of the steps described above may be optional. Various activities described with respect to the methods identified above can be executed in repetitive, serial, and/or parallel fashion.
[0076] It is to be understood that the foregoing description is intended to illustrate and not to limit the scope of the invention, which is defined by the scope of the following claims, and that other embodiments are within the scope of the claims. In particular, the scope of the invention includes any and all feasible combinations of one or more of the processes, machines, manufactures, or compositions of matter set forth in the claims below. (Note that the parenthetical labels for claim elements are for ease of referring to such elements, and do not in themselves indicate a particular required ordering or enumeration of elements; further, such labels may be reused in dependent claims as references to additional elements without being regarded as starting a conflicting labeling sequence).