Method for marking and authenticating diamonds and precious stones

Abstract

Method and systems are presented for authentication of precious stones, according to their natural ID and/or predetermined markings created in the stones, based on unique characteristic radiation response of the stone to predetermined primary radiation.

Claims

1. A method for marking a precious stone to enable authenticating the precious stone, the method comprising: applying a physical or a chemical material deposition process to the precious stone and creating at least one ultra-thin invisible predetermined marking on at least a portion of a surface of the precious stone, wherein said at least one ultra-thin invisible predetermined marking does not affect appearance or optical properties of said precious stone, said at least one ultra-thin invisible predetermined marking being unique for said precious stone or a batch of related precious stones, such that the precious stone with said at least one ultra-thin invisible predetermined marking is characterized by a unique characteristic X-ray or gamma-ray radiation response to predetermined primary radiation, thereby enabling authentication of the precious stone upon identifying the unique characteristic radiation response of the precious stone.

2. The method of claim 1, wherein said material deposition process comprises at least chemical vapor deposition (CVD).

3. The method of claim 2, wherein said CVD comprises an atomic layer deposition (ALD) process.

4. The method of claim 3, wherein said at least one predetermined marking is in the form of a single- or multi-layer structure.

5. The method of claim 3, wherein said at least one predetermined marking is in the form of a layered structure comprising at least 50 monolayers.

6. The method of claim 5, wherein said at least one predetermined marking is in the form of a layered structure comprising monolayers of platinum interspaced with monolayers of oxygen.

7. The method of claim 6, wherein said layered structure comprises 100 monolayers of platinum interspaced with monolayers of oxygen.

8. The method of claim 1, wherein the unique characteristic X-ray or gamma-ray radiation response is indicative of a unique material composition of said at least one predetermined marking on a structure of the stone, defined by materials and materials' concentrations of the marking and the structure of the stone.

9. The method of claim 1, further comprising recording said at least one predetermined marking being created, said recording comprising applying the predetermined primary radiation to said at least portion of the stone to induce secondary radiation from said at least portion of the stone in response to said primary radiation, and detecting the secondary radiation and storing data indicative thereof as a predetermined characteristic radiation response to be used in an authentication process of the precious stone to identify whether a detected secondary radiation of the precious stone matches the predetermined characteristic radiation response.

10. The method of claim 1, wherein said precious stone is diamond.

11. A method for marking a diamond, having pre-marking appearance and original values of a predetermined set of parameters including carat, clarity, color and cut uniquely characterizing the diamond, to enable authenticating the diamond, the method comprising: applying a physical or chemical material deposition process including atomic layer deposition (ALD) process to the diamond and creating at least one ultra-thin invisible predetermined marking on at least a portion of a surface of the diamond, wherein said at least one ultra-thin invisible predetermined marking does not affect appurtenance or optical properties of the diamond, said at least one ultra-thin invisible predetermined marking being unique for said diamond or a batch of related diamonds, such that the diamond with said at least one predetermined marking being characterized by unique characteristic X-ray or gamma-ray radiation response to predetermined primary radiation, thereby enabling authentication of the diamond upon identifying the unique characteristic radiation response of the diamond, wherein said at least one ultra-thin invisible predetermined marking is in the form of a multi-layered structure covalently bonded to said at least portion of the surface of the diamond, such that the appearance and the values for the predetermined set of parameters are maintained for the diamond carrying said at least one ultra-thin invisible predetermined marking.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) In order to better understand the subject matter that is disclosed herein and to exemplify how it may be carried out in practice, embodiments will now be described, by way of non-limiting example only, with reference to the accompanying drawings, in which:

(2) FIG. 1 is a block diagram exemplifying a marking system according to the invention for marking precious stones;

(3) FIGS. 2A and 2B exemplify a diamond carrying invisible and properties-maintaining marking of the invention;

(4) FIGS. 3A and 3B show flow diagrams of two examples, respectively, of a method of the invention for marking precious stones; and

(5) FIG. 4 is a block diagram of an authenticating system according to the invention.

DETAILED DESCRIPTION OF EMBODIMENTS

(6) The invention, in its some aspects, provides a marking method and system for use in marking precious stones in manner to create an X-ray based detectable marker on stone, wherein the marker as well as marking process do not affect any of geometrical, mechanical and optical properties of the stone providing that the quality (value) of the stone is not affected, and also do not affect the standard manufacturing process of the stones, while providing resilient and durable attachment of the marker to the stone.

(7) More specifically, the present invention is used for marking and authenticating diamonds and is therefore exemplified below with respect to this specific application. It should, however, be noted that the principles of the present invention are not limited to this specific application, and can be used with any type (as well as size and shape) of precious stones.

(8) In the invention, the marker is applied to the surface of a diamond using vacuum deposition methods, preferably those in which single atom (or single molecule) layers of one or more marking elements (“markers”) and optionally additional materials are deposited on the surface of the diamond. The deposition process is carried out at pressure which is well below atmospheric pressure or in vacuum (i.e. in a vacuum chamber). In general, vacuum deposition processes enable the deposition of layers which range in thickness from single atom up to a few millimeters. The material being deposited on a substrate in such methods is in vapor state.

(9) It should be noted that the term marking element or marker as used herein refers to an element which can be identified by XRF analysis, namely, element which responds to exciting X-ray or gamma-ray radiation (primary radiation) by emission of an X-ray response signal (secondary radiation or excited radiation) with spectral features (i.e. peaks in particular wavelength(s)) which characterize the element. In the description below, such an X-ray response signal is referred to as XRF signature.

(10) Preferably, the vacuum deposition process used in the marking technique of the invention utilizes Atomic Layer Deposition (ALD), being based on the principles of Chemical Vapor Deposition (CVD) in which the vapor is generated by chemical reactions which include one or more precursors. The category of CVD includes various processes such as low-pressure chemical vapor deposition (LPCVD), Plasma-Enhanced Chemical Vapor Deposition (PECVD), Plasma-Assisted CVD (PACVD), and Atomic Layer Deposition (ALD).

(11) Alternatively, or additionally, the process of depositing the marker material(s) on the diamond includes Physical Vapor Deposition (PVD) in which the vapor source is solid or liquid. A PVD process may use techniques such as sputtering, cathodic arc deposition, thermal evaporation, laser ablation serving as a (solid) precursor to generate vapor, and electron beam deposition, to generate the deposited particles in a vapor phase.

(12) FIG. 1 schematically illustrates, by way of a block diagram, the marking system 10 of the invention. The system 10 includes such main functional parts as a material deposition system 12 associated with a stone holding unit (stage, e.g. X-Y or R-Theta movable stage) 14, and a control system 16 connectable (via wires or wireless signal transmission) to the material deposition system 12, and possibly also to the stage 14 (i.e. its driver in case the relative displacement of the stage with respect to the processing tool of system 12 is considered). In the present not limiting example, the material deposition system 12 includes an ALD tool 12A and possibly also a PVD tool 12B.

(13) The control system 16 is appropriately configured and operable for controlling the material deposition process being performed by the system 12 to provide desired material composition of the marker(s) and desired marker-film thickness. The control system 16 is typically a computer system including inter alia such functional utilities as data input and output utilities 16A and 16B, memory 16C, processor utility 16D, and also includes a material deposition controller 17 (receiving user input about the marker(s) to be created and generating corresponding operating parameters to the processing (material depositing) tool. Preferably, the control system 16 also includes a recording unit 18, which is configured as an XRF reader for reading the marker(s) being formed in the stone, such as an Energy Dispersive XRF (EDXRF) analyzer. The recording unit 18 is configured for applying to the precious stone (or at least portion thereof where the marking is being created) predetermined primary radiation (X-ray or gamma-ray radiation) to thereby induce secondary radiation from the stone (or at least the respective portion thereof) in response to the primary radiation, and detecting the secondary radiation, and verifying/recording data indicative thereof. This data is stored in the memory 16C and/or in a remote storage device (database) as the data/signature corresponding to the unique characteristic radiation response of the specific stone or a group/batch of related stones, to be further used during verification/authentication procedure.

(14) The operation of the ALD and/or PVD based systems are generally known, and therefore need not be described in details. The system operation to implement the method of the invention is exemplified more specifically further below.

(15) The vacuum deposition method of the present invention allows for depositing a layered structure carrying one or markings, e.g. uniform overall layers of compounds (including markers) over the surface of a precious stone, e.g. a continuous (unpatterned) layered structure/film or layered structure/film formed by discrete spaced-apart regions of the deposited compounds (being deposited via a mask). It should be noted that using the ALD as a material deposition method, provides for the overall depositing layer on the entire surface of the diamond exposed to the material being deposited (except for the points or area of contact with a sample tray or other holding means) to be completely uniform up to a single molecule level. The other CVD based techniques provides the layer uniformity up to some statistical deviation. As for the PVD, this technique provides mainly for creating a uniform overall layer on the surface that is facing the precursor (depending on the particular method). Thus, the uniformity of the overall layer depends on the particular method of deposition: in ALD the overall layer is formed all over the surface uniformly except for the points of contact with a holding means; in CVD not as much; and in PVD the uniform layer can be formed mainly on the surfaces which directly faces the precursor.

(16) The uniformity of the layer facilitates fast and accurate measurement of the concentration of deposited markers. For example, the measured concentration is, to a high degree, constant over the entire surface of the precious stone, or over the entire surface region of the stone where the marker(s) is/are placed.

(17) In order to apply one or more markers to the surface of a diamond, such that the marking does not affect the appearance or other properties of the diamond (as described above), an ultra-thin marking layered structure is created ranging in thickness from a single angstrom (that is a single atom or single molecule) to hundreds or thousands of angstroms. In an example, the thickness of the deposited layered structure is between 50 angstroms and 150 angstroms.

(18) The thickness of the film-marker may be determined by the type of precious stone which is to be marked. For example, marking of rough diamonds may be obtained with a thinner marking layer as compared to cut or polished stone due do its rough surface.

(19) As indicated above, the marker being created is in the form of an invisible film (layered structure). This is schematically demonstrated in FIG. 2A, showing a diamond 20 (generally, a precious stone) being in this non-limiting example a cut and polished diamond 20 having an arrangement of facets. The diamond has its unique combination of a set of parameters having original values. The marker in the form of invisible film, having unique XRF response (secondary radiation induced in response to incident primary radiation), may be located on the entire surface 22 of the diamond, or only on part thereof, e.g. on one of its facets 24, as the case may be. FIG. 2B demonstrates that the properties of the diamond (i.e. values of said parameters) are not affected by the marker carried by the diamond. As indicated above, diamond is typically classified by its carat, clarity, color and cut. The inventors have shown that inducing one or more markings of the present invention on at least a portion of the diamond's surface provides for maintaining the original (pre-marking) values of these parameters.

(20) Additionally, the method of the present invention allows the deposition of ultra-thin marking layers which can be detected only by utilizing advanced methods for amplifying and enhancing the XRF signals emitted by the markers. For example, the methods described in International application PCT/IL2016/050340, which is assigned to the assignee of the present application and is incorporated herein by reference.

(21) Reference is now made to FIG. 3A which is a flow diagram 100 of a method (carried out by the marking system similar to that described above with reference to FIG. 1) for marking precious stones according to an embodiment of the present invention. The marking according to this method allows the authentication of the precious stones by detecting the marking using XRF analysis. In procedure 102, one or more precious stones to be marked are placed under pre-selected high temperature and sub-atmospheric pressure conditions (e.g. in a vacuum chamber). In optional procedure 104, the surfaces of the precious stones are treated by plasma. For example, the surfaces of the precious stones may be treated by oxygen or water plasma, which may bond OH (hydroxyl) groups to the surface of the precious stones. In procedure 106, the precious stones are exposed to one or more precursors in a vapor phase for a preselected period of time. The molecules of each of the precursors includes a marking element or marker (namely, an element with an identifiable XRF signature) and may include additional materials. For example, the molecules of the precursors may include organic parts. The marking elements, for example, may be metals. In a different example, the marking elements may be non-metals such as halogens. The exposure of the precious stones to the precursors enables the attachment of the precursor molecules and the markers to the surfaces of the precious stones. In an example, the precursors vapor may react with the OH groups which may exist (either naturally, or due to the plasma surface treatment) on the surface of the precious stone. Furthermore, monolayers of molecules (that is, layers which are one molecule thick) which include the markers are constructed over the surfaces of the precious stones. The number of layers and consequently, the thickness of the overall layer (including all monolayers) is determined by the time of exposure of the precious stones to the precursors vapor. Alternatively, in a self-terminating process such as ALD, which comprises a plurality of self-saturating cycles, the thickness of the layer is determined by the number of cycles.

(22) In an embodiment of the present invention the deposition of one or more marking elements is carried out using ALD. The vapor which is introduced into the vacuum chamber is generated from one or more precursors in a liquid phase. In an example the precursors are organometallic compounds. The ALD process facilitates the deposition of a uniform pinhole-free film without discontinuities or holes which may be present in film grown via nucleation (as may be the case in other CVD or PVD methods, particularly in very thin films). Additionally, the ALD process may create a practically stress-free film as compared to other deposition methods wherein compressive or tensile stress may cause delamination and separation between the film and the substrate which may result in cracks and blisters. Furthermore, the aspect ratio of the ALD method is very high, for example 2000:1 or higher (namely, with ALD one may create a uniform layer even in cracks and recesses wherein the ratio between the width and the depth of the recess is higher than 2000:1). The high aspect ratio contributes to the uniformity (and consequently the resilience) of the film and additionally allows for a high density marked during a single ALD process.

(23) Then, preferably, the precious stones with the marking created as described above undergoes a so-called “reading procedure” (step 108) for reading and recording the unique characteristic radiation response (X-ray or gamma-ray radiation response) of the stone with marking(s) therein. To this end, the precious stone (or at least portion thereof where the marking has been created) is subjected to predetermined primary radiation to induce secondary radiation from the stone (or at least portion thereof) in response to the primary radiation, and the secondary radiation is detected, and data indicative thereof is recorded, enabling storage of the corresponding data/signature as the unique characteristic radiation response of the specific stone or a group of related stones.

(24) Reference is now made to FIG. 3B which is a flow diagram 200 of a method for marking precious stones according to another embodiment of the present invention. In procedure 202, one or more precious stones to be marked are placed under pre-selected high temperature and sub-atmospheric pressure conditions (e.g. in a vacuum chamber). In optional procedure 204, the surfaces of the precious stones are treated by plasma. For example, the surfaces of the precious stones may be treated by oxygen or water plasma, which may bond OH (hydroxyl) groups to the surface of the precious stones. In procedure 206, the precious stones are exposed a precursor in a vapor phase, wherein the precursor includes a marking element which may be detected and identified using XRF analysis. The precursor may react with OH groups and other materials which exist on the surface of the precious stone thereby creating a uniform monolayer on the surface of the precious stone. This deposition is self-terminating since once the monolayer is created the deposition is terminated and no additional material is deposited. The excess vapor is then evacuated from the vacuum chamber. In procedure 208, the precious stones are exposed to plasma or water vapor which is introduced to the vacuum chamber. The plasma treatment or the exposure to water vapor bonds OH groups to the monolayer deposited in procedure 206. In procedure 210, procedures 206 and 208 are repeated either with the same precursor and the same marking element or alternatively with a plurality of precursors and a plurality of marking elements. At each step, a uniform monolayer of molecules is created, which include one marking element. The monolayer is then treated with plasma and the next monolayer is constructed.

(25) The overall thickness of the layered structure deposited on the surface of the precious stones in set by the number of cycles, that is the number of deposited monolayers.

(26) Such a layer by layer covalently bonded structure has a number of benefits, for example: XRF marking using such a structure is resilient and wear resistant, and able to withstand the extreme condition of the cleaning processes of diamonds. An additional factor which may contribute to the resilience of the marking are OH groups which may be present on the surface of the diamonds. The XRF marking does not affect the appearance of the diamond due to (i) the small thickness of the structure (possibly down to few angstroms—“ultrathin layer”); and (ii) the use of metallic oxides rather than metals (which are in general more opaque than metallic oxides). The construction of the layer by layer structure allows full control of the thickness of the overall deposited layer (up to a resolution of a single atom) and consequently of the concentration of the one or more markers present on the surface of the diamond which may be detected and measured using XRF analysis. The overall layer is uniform up to an angstrom (the thickness of a monolayer) resolution. The uniformity of the overall layer and the high aspect ratio of the above method contributes to the resilience of the deposited marking due to the lack cracks, pinholes and/or discontinuities in the overall deposited layer, which for example, may expose a cross section of the multi-layered film to the acids and aggressive conditions of a diamond-cleaning processes.

(27) The above method can also be used to deposit a number of marking materials from a number of precursors which are deposited at different pulses. The concentrations of the different markers can be fully controlled by the number of layers of markers deposited on the diamond.

(28) The deposition of a number of markers to the surface of a diamond allows the introduction of a coding system wherein the type and different concentrations of the markers are determined according to a preselected code. A code-word can for example, be used as an elemental ID for the particular diamond or a batch of diamonds, it can be used to indicate the source of the diamond or the chain of supply, or for encoding any other data as required.

(29) Similarly to the above-described example of FIG. 3A, in the example of FIG. 3B the stone with the markings may also undergoes a reading procedure (step 212) for reading and recording the unique characteristic radiation response (X-ray or gamma-ray radiation response) of the stone with marking(s) therein. Such reading and recording procedure is similar to that described above with reference to FIG. 3A.

(30) The following is an example of marking diamonds with metallic-oxides: The diamonds (generally, precious stones) to be marked are also heated by heating the sample tray on which they positioned within the vacuum chamber. The temperature to which the precious stones are heated depends on the particular type of stone, the type of the surface (e.g. rough or cut) and the type of the precursor. In a particular example, cut diamonds may be heated to 200° C. The precursor is a heated organometallic in a liquid phase. In an example the organometallic compound is heated to 75° C. The deposition is done in cycles (or pulses) wherein in each pulse a one molecule thick layer (monolayer) of metallic oxide is created, initially on the surface of diamond, and thereafter on previously deposited layers.

(31) Each pulse includes two steps. In the first step of the first pulse a layer of the organometallic compound is created on the surface of the diamond wherein the metallic element of each molecule is adjacent to the surface of the diamond and the organic part of each molecule is positioned away from the surface of the diamond. At the end of the first step, the excess vapor is evacuated from the vacuum chamber. In the second step water or oxygen plasma is introduced into the vacuum chamber which removes the organic part of each molecule and bonds one or more OH groups to the metallic element instead. The result of the first pulse is a monolayer of the metallic compound attached to the surface of the diamond, wherein each metallic atom is covalently bonded to OH groups which are positioned away from the surface of the diamond.

(32) In the first step of following pulses, a layer of the organometallic compound is created on the layer of the previous pulse, wherein the metallic element reacts with the OH group of the previous layer creating the covalent bonds M-O-M (M being the metallic element). Namely, the metallic element of the organometallic compound of the new layer becomes covalently bonded to the oxygen atoms of the previous layer, wherein its organic part is position away from the previous layer. At the end of the first step, the excess vapor is evacuated from the vacuum chamber.

(33) In the second step of each of the following pulses, water or oxygen plasma is introduced to the vacuum chamber removing the organic part of the molecules of the previous layer and creating covalent bonds with OH groups instead.

(34) Each pulse therefore creates a monolayer of the metallic compound which is covalently bonded the layer of oxygen atoms of the previous layer (bottom layer) and to oxygen atom of the present pulse (top layer).

(35) In some embodiments of the present invention, an additional step wherein plasma is introduced into the vacuum chamber prior to the first pulse, is carried out. Such a step may ‘activate’ the surface of the diamond and assists in bonding the first layer to the surface of the diamond.

(36) Reference is made to FIG. 4 exemplifying, by way of a block diagram, an authenticating system 300 of the present invention. The authentication system 300 includes a reading unit 302 and a control unit 304 connectable to the output of the reading unit via wires or wireless signal transmission. The reading unit 302 includes a radiation source 302A and a detector 302B. The radiation source 302A is configured to emit an X-ray and/or gamma-ray radiation PR (primary radiation) towards a precious stone 20 under examination. The detector 302B detects a radiation (X-ray) response signal SR (secondary radiation) that is emitted/produced in response from the precious stone (‘response signal’ or “radiation signature”). The detector 302B generates measured data MD indicative of the detected response signal SR and transmits this data MD to the controller 304. The controller 304 is a computer system including data input and output utilities, memory, etc. The system 300 includes a data processor 306, which is configured to have access to a database which may for example be associated with an external storage device 400, e.g. accessible via a communication network. The database stores information relating to particular (original) precious stones or groups/batches of stones (e.g. unique electronic certificates assigned to the stones/groups of stones) being indicative of material composition characterizing the precious stone/group of stones.

(37) The data stored in the database includes data records/fields/pieces including data for, respectively, particular precious stones or particular batches/groups of precious stones. In some embodiments, such data per the particular precious stone or particular batch/group of precious stones may include the stone/batch/group characteristic radiation response signal (radiation signature of the stone/group) and the corresponding material composition of the stone/batch/group.

(38) In some embodiments, the processor 306 may be configured to apply fitting-based processing to the detected radiation response signal SR, and if and when the best matching response signal/radiation signature in the database is found the respective stone is positively authenticated. The control system 304 may generate the notification signal about the authentication results.

(39) The authentication procedure may be based on identification of the stone based on the marking previously induced/deposited or on the natural elemental ID of the stone, as described above. Accordingly, the characteristic response signal being read is either the marker(s) response or the natural ID response; and the operating parameters of the reading unit 302 (e.g. its operative wavelengths ranges) are adjusted accordingly.

(40) It should be understood that considering authentication based on markers, the data to be identified may generally include presence of a predetermined layered structure on at least a portion of the surface of a precious stone, or may include concentrations of the predetermined materials on the surface of the precious stones, that is, their concentrations in the overall marking layer or layered structure applied to precious stone. The particular markers and their concentrations may be set according to a preselected code wherein each individual precious stone or alternatively a batch of precious stones marked in a single process are allocated a particular code-word.

(41) In a particular example, a diamond may be marked by a uniform film comprised of about 100 monolayers of platinum interspaced with monolayers of oxygen deposited on the diamond's surface using ALD. The diamonds are placed in a vacuum chamber on a sample tray/stage heated to about 100-150° C. At a first stage, the surface of the diamonds is treated with oxygen plasma. An organometallic precursor vapor comprising (Trimethyl)-methylcyclopentadienyl platinum is introduced to vacuum chamber creating a monolayer of platinum on the surface of the diamonds which bonds to the oxygen of OH groups on the surface. In the process the hydrogen atoms are removed from the OH groups and bond to the organic part of the precursor's molecules. The organic part of the precursor's molecule on the diamond surface is positioned away from the surface. The residuals of the precursor vapor are then evacuated from the vacuum chamber, and oxygen plasma is introduced to the chamber removing the organic part of the organometallic precursor and bonding OH groups to the platinum. The process continues in alternate stages of creating interspaced layers of platinum and oxygen. The process continues until a uniform 50-100 angstrom film is deposited on the surface of the diamonds and being covalently bonded thereto. The deposited film is transparent, invisible and does not damage the diamond or affect its value; and the covalent bonding provide a desirably strong and stable attachment of the film to the diamond.

(42) Considering the authentication based on natural elemental ID of precious stones, e.g. diamonds, the following should be noted. The carbon crystal structure of diamonds (diamond lattice) may include various types of impurities and imperfections, that is, various types of foreign metallic or non-metallic particles and materials. These impurities are incorporated throughout the crystal but may be more abundant at the surface of the diamond due to unfulfilled excess valences of the carbon atoms at the end surfaces and the edges of the crystal.

(43) The foreign materials may for example include two or more of the following elements: Ti, Cr, Zn, Ag, Tl, W, Ni, Co, Ta, Si, Mg, P, Cd, V, Fe, Cu, Pb, Mn, Tc, Nd, Y, Ga, Ca, F, As, as well as other elements.

(44) The foreign materials and their concentrations on the outer layer of the diamond can be measured by XRF analysis, wherein the depth or thickness of the outer layer as well as the accuracy of the measurement are determined by the particular XRF analyzer used for analysis. The types of foreign materials and their corresponding concentrations and/or relative concentration may be used as an elemental ID for a particular precious stone (e.g. diamond) or a batch of stones (diamonds). The foreign materials found in the precious stone are typically incorporated or trapped within the core of the precious stone (diamond crystal) during the formation of the crystal. These materials therefore correspond to the environment present at the vicinity of the location where the process of diamond's formation took place. Consequently, such elemental ID may also correspond to the source of the diamond, that is the particular mine, or more generally the geographical region from which it originates.

(45) In an aspect of the present invention, foreign materials composition can be detected/read in a particular surface area of the diamond and the elemental ID therefore corresponds to this particular area. Alternatively, the entire surface area of the diamond may be irradiated and the secondary radiation from the entire surface area of the diamond may be collected (for example by rotating the diamond during the irradiation and detection) and analyzed, such that the elemental ID would correspond to the entire surface or outer layer of the diamond.

(46) The following Table 1 and Table 2 show two examples, respectively, of natural elemental IDs for two exemplary diamonds derived from spectra measured by a 2 kilowatt XRF spectrometer. The diamond on stage is rotated during the measurement and the spectrum includes secondary radiation arriving from the entire surface of the diamond.

(47) In the Tables 1 and 2, column 1 includes the main foreign elements found on the surface of the diamond (not including carbon); column 2 lists the main peaks of the spectrum associated with the respective elements; column 3 lists the main atomic transitions contributing to the respective peaks; column 4 includes the relative area of each peak corresponding to the number of counts associated with the peak (namely, the relative area is the number of counts associated with a peak divided by the total number counts associated with all the peaks for all the foreign elements); and column 5 includes the relative concentration of the foreign elements calculated from the spectrum. The relative concentrations in the Tables include only the main foreign elements and were normalized to 1.

(48) TABLE-US-00001 TABLE 1 Relative peak Peak- Atomic area (relative energy state number of Relative Element [eV] transitions peaks) concentration N 373.9 K.sub.α, K.sub.β 0.110827 0.110827 Si 1761.1 K.sub.α, K.sub.β 0.082408 0.082408 Ar 2955.6 K.sub.α 0.052162 0.097633 3154.9 K.sub.β 0.04547 Ca 3659 K.sub.α 0.02782 0.02782 Mn 5899.9 K.sub.α 0.028836 0.028836 Fe 6413.5 K.sub.α 0.060483 0.08484 7031.8 K.sub.β 0.024357 Ni 7464.5 K.sub.α 0.039696 0.039696 Cu 8038.5 K.sub.α 0.059786 0.107098 8911.9 K.sub.β 0.047312 Zn 8619.7 K.sub.α 0.049275 0.049275 Ga 9219.4 K.sub.α 0.032648 0.032648 As 10523 K.sub.α 0.081384 0.081384 Kr 12672.2 K.sub.α 0.257537 0.257537

(49) TABLE-US-00002 TABLE 2 Peak- Relative energy Atomic peak Relative Element [eV] transitions area concentration F 710.1 K.sub.α, K.sub.β 0.03278304 0.03278304 Ne 832.9 K.sub.α, K.sub.β 0.0389153 0.0389153 Na 1039.1 K.sub.α, K.sub.β 0.03863866 0.03863866 Mg 1261.1 K.sub.α, K.sub.β 0.02812462 0.02812462 Al 1494 K.sub.α, K.sub.β 0.02069102 0.02069102 Si 1778.7 K.sub.α, K.sub.β 0.01637284 0.01637284 Zr 2116.8 L.sub.α L.sub.β 0.01368669 0.01368669 S 2350.6 K.sub.α, K.sub.β 0.01266916 0.01266916 Cl 2620.1 K.sub.α, K.sub.β 0.02311165 0.02311165 Ar 2945.6 K.sub.α 0.01399434 0.02701566 3227.6 K.sub.β 0.01302132 In 3328.8 L.sub.α 0.01269141 0.03870782 3459.8 L.sub.β 0.01282179 3876.4 L.sub.γ 0.01319462 Ca 3705.1 K.sub.α 0.01426065 0.02469838 4020 K.sub.β 0.01043772 Ti 4456.3 K.sub.α 0.01157371 0.01157371 V 5000.6 K.sub.α 0.01212541 0.01212541 Fe 6392.1 K.sub.α 0.05345816 0.07227389 7053.1 K.sub.β 0.01881573 Ni 7428.8 K.sub.α 0.01790074 0.03845185 8284.5 K.sub.β 0.02055111 Cu 8049.4 K.sub.α 0.02050421 0.04103783 8885.8 K.sub.β 0.02053362 Re 8654.5 L.sub.α 0.01994138 0.04075005 10177.1 L.sub.β 0.02080867 As 10529.5 K.sub.α 0.02625251 0.02625251 Kr 12561.5 K.sub.α 0.06747715 0.19714739 14075.6 K.sub.β 0.12967025 Y 14911.6 K.sub.α 0.22241177 0.22241177 Te 27383.2 K.sub.α 0.02256075 0.02256075

(50) Turning back to FIG. 4, the control system 304 may be configured and operable for data communication with an internal and/or external processor and analyzer 306 to generate an output signal indicative of whether the received detected radiation signature of the diamond satisfies a matching condition with natural elemental ID assigned to unique material composition of said diamond and recorded in the diamond certificate.

(51) Thus, the storage device 400 stores a novel database, which is configured according to the invention to be accessible (e.g. via a communication network) and includes a plurality of electronic certificates assigned to a respective plurality of diamonds or plurality of groups of diamonds. Each such electronic certificates includes a natural elemental ID read from the precious stone and assigned to unique material composition of the respective precious stone (e.g. diamond) or group of precious stones (diamonds) and data indicative of a corresponding unique radiation signature of the precious stone or group of precious stones.

(52) The authentication system 300 (which may be equipped with an appropriate communication utility for data communication with various electronic devices, e.g. via a communication network) has access to the storage device 400 and is configured and preprogrammed to be responsive to an input request signal/data (e.g. received via communication network) containing data indicative of a radiation signature (measured by the reading unit) and/or the material composition, to access the storage device 400 and identify whether the received radiation signature and/or material composition has its respective diamond or group of diamonds stored in the database to thereby provide the resulting authentication related signal/data.

(53) It should be noted that the radiation source 302A, the detector 302B and the controller 304 may be constructed as a single device such as an XRF analyzer (for example, Energy Dispersive XRF analyzer), which may be handheld or portable XRF analyzer, or a benchtop XRF spectroscopy device. Alternatively, the emitter, the detector and the controller may be constructed as separate devices. The authentication system 300 may be configured as either of-the-shelf device or alternatively as a device which is specifically designed and constructed for exciting and detecting a response signal from the precious stone.

(54) The controller 304 controls the operation of the emitter 302A and the detector 302B. The processor 306 may be a module of the controller 304, or a module of the detector, or its functional utilities may be distributed in the controller and detector. The processor 306 receives the response X-ray signal (or data indicative thereof) from the detector and processes it so as to filter out the background radiation noise and clutter from the response signal. The processor 306 may employ common filtration methods such as for example quasi-Gaussian spectroscopy amplifier and Gaussian filtering. Additionally, the processor may employ more advanced methods for processing the response signal, for example statistical methods such as time series analysis in order to obtain an enhanced response signal with an improved SNR and SCR.

(55) The processor 306 may determine, according to the response signal (or the enhanced response signal), the concentrations of the markers present on the surface of the precious stone. The processor may also be configured to compare the measured concentrations with the concentrations derived from the preselected code which is stored in the database, and determine its authenticity accordingly.

(56) Turning back to FIGS. 2A and 2B, the technique of the present invention allows for assigning to a diamond a certificate which includes (e.g. in addition to standard parameters of the diamond) data indicative of its unique spectral signature, which may be that of the markings carried by the diamond or may be a natural elemental ID assigned to unique material composition of said diamond. Hence, a customer can receive a diamond kit including a diamond and a certificate assigned to said diamond and comprising data indicative of unique spectral signature, e.g. the natural elemental ID thereof. The diamond can be authenticated by applying the X-ray or gamma-ray inspection thereto as described above to detect its radiation signature indicative of material composition of the diamond, and communicating with the storage device/database to identify whether a match exists between the natural elemental ID in the diamond's certificate and the detected/measured radiation signature. The signature reading technique and reading system based thereon may for example be as those described in the above-mentioned International application PCT/IL2016/050340, which is assigned to the assignee of the present application and is incorporated herein by reference.