Component carrier and method of manufacturing the same

Abstract

A component carrier includes a stack having at least one electrically insulating layer structure and/or at least one electrically conductive layer structure; a heat removing and electrically conductive base structure; a component which is connected to the base structure so as to at least partially protrude from the base structure and so as to be laterally at least partially covered by an electrically insulating material of the stack; and an electrically conductive top structure on or above a top main surface of the component. A method of manufacturing such a component carrier is disclosed.

Claims

1. A component carrier, comprising: a stack comprising at least one electrically insulating layer structure and/or at least one electrically conductive layer structure; a heat removing and electrically conductive base structure comprising a copper foil and a layer of galvanic copper; a component which is connected to the base structure so as to at least partially protrude from the base structure and so as to be laterally at least partially covered by an electrically insulating material of the stack, wherein the layer of galvanic copper laterally surrounds the component and contacts the lateral sides of the component; and an electrically conductive top structure on or above a top main surface of the component.

2. The component carrier according to claim 1, wherein the component is connected to the base structure for heat spreading at least with a heat spreading angle of 45°.

3. The component carrier according to claim 1, wherein the base structure has a thickness of larger than 100 μm; and/or the top structure has a thickness of at least 50 μm; and/or the top structure has a thickness being smaller than a thickness of the base structure.

4. The component carrier according to claim 1, wherein the component has at least one terminal at a top main surface and at least one terminal at a bottom main surface, wherein the at least one terminal at the bottom main surface is connected to the base structure and the at least one terminal on the top surface is connected to the top structure.

5. The component carrier according to claim 1, wherein the component is laterally surrounded at least partially by a core.

6. The component carrier according to claim 1, wherein the top structure comprises a copper foil.

7. The component carrier according to claim 1, wherein at least 10% of a sidewall of the component is covered with a material of the base structure; and/or at least 10% of a sidewall of the component is covered with an electrically insulating material of the stack.

8. The component carrier according to claim 1, wherein a patterned adhesive or sintered layer is arranged within the base structure and provides an electric and/or thermal contact for the component.

9. The component carrier according to claim 1, further comprising at least one of the following features: the component carrier comprises at least one component being surface mounted on and/or embedded in the component carrier, wherein the at least one component is selected from a group consisting of an electronic component, an electrically non-conductive and/or electrically conductive inlay, a heat transfer unit, a light guiding element, an optical element, a bridge, an energy harvesting unit, an active electronic component, a passive electronic component, an electronic chip, a storage device, a filter, an integrated circuit, a signal processing component, a power management component, an optoelectronic interface element, a voltage converter, a cryptographic component, a transmitter and/or receiver, an electromechanical transducer, an actuator, a microelectromechanical system, a microprocessor, a capacitor, a resistor, an inductance, an accumulator, a switch, a camera, an antenna, a magnetic element, a further component carrier, and a logic chip; wherein at least one of the electrically conductive layer structures of the component carrier comprises at least one of the group consisting of copper, aluminum, nickel, silver, gold, palladium, and tungsten, any of the mentioned materials being coated with supra-conductive material such as graphene; wherein the electrically insulating layer structure comprises at least one of the group consisting of reinforced or non-reinforced resin, epoxy resin or bismaleimide-triazine resin, FR-4, FR-5, cyanate ester, polyphenylene derivate, glass, prepreg material, polyimide, polyamide, liquid crystal polymer, epoxy-based build-up film, polytetrafluoroethylene, a ceramic, and a metal oxide; wherein the component carrier is shaped as a plate; wherein the component carrier is configured as one of the group consisting of a printed circuit board, a substrate, and an interposer; wherein the component carrier is configured as a laminate-type component carrier.

10. A method of manufacturing a component carrier, comprising: providing a stack comprising at least one electrically insulating layer structure and/or at least one electrically conductive layer structure; forming a heat removing and electrically conductive base structure comprising a copper foil and a layer of galvanic copper; connecting a component to the base structure so that the component at least partially protrudes from the base structure and is covered on its sidewalls at least partially by an electrically insulating material of the stack, wherein the layer of galvanic copper laterally surrounds the component and contacts the lateral sides of the component; and forming an electrically conductive top structure electrically contacting a top main surface of the component.

11. The method according to claim 10, wherein an inner component carrier is formed on panel level in the step of connecting the component to the base structure, and the inner component carrier is embedded on panel level in a cavity of an outer component carrier.

12. The method according to claim 10, wherein the component carrier is manufactured using a temporary carrier which is temporarily attached to a main surface of the component directed to the top structure.

13. The method according to claim 10, wherein the component carrier is manufactured by use of a temporary carrier which is temporarily attached to a main surface of the component directed to the base structure.

14. The method according to claim 10, wherein the component carrier is manufactured by a batch process on panel level.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 illustrates a cross-sectional view of a component carrier according to an exemplary embodiment of the invention.

(2) FIG. 2 illustrates steps of a base concept of manufacturing an inner component carrier according to an exemplary embodiment.

(3) FIG. 3 illustrates steps of the base concept of manufacturing the inner component carrier according to the exemplary embodiment.

(4) FIG. 4 illustrates an alternative step of the base concept of manufacturing the inner component carrier according to the exemplary embodiment.

(5) FIG. 5 illustrates a cross-sectional view of a component carrier according to an exemplary embodiment of the invention.

(6) FIG. 6 illustrates a cross-sectional view of a component carrier according to an exemplary embodiment of the invention.

(7) FIG. 7 illustrates a step of a base concept of manufacturing an inner component carrier according to an exemplary embodiment.

(8) FIG. 8 illustrates a step of the base concept of manufacturing the inner component carrier according to the exemplary embodiment.

(9) FIG. 9 illustrates a step of the base concept of manufacturing the inner component carrier according to the exemplary embodiment.

(10) FIG. 10 illustrates a step of the base concept of manufacturing the inner component carrier according to the exemplary embodiment.

(11) FIG. 11 illustrates a step of a base concept of manufacturing an inner component carrier according to an exemplary embodiment.

(12) FIG. 12 illustrates a step of the base concept of manufacturing the inner component carrier according to the exemplary embodiment.

(13) FIG. 13 illustrates a step of the base concept of manufacturing the inner component carrier according to the exemplary embodiment.

(14) FIG. 14 illustrates steps of a base concept of manufacturing an inner component carrier according to an exemplary embodiment.

(15) FIG. 15 illustrates a step of the base concept of manufacturing the inner component carrier according to the exemplary embodiment.

(16) FIG. 16 illustrates a step of the base concept of manufacturing the inner component carrier according to the exemplary embodiment.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

(17) The illustrations in the drawings are schematically presented. In different drawings, similar or identical elements are provided with the same reference signs.

(18) FIG. 1 illustrates a cross-sectional view of a component carrier 1 according to an exemplary embodiment of the invention. The component carrier 1 can be shaped as a plate. The component carrier 1 can be configured as one of the group consisting of a printed circuit board, a substrate, and an interposer. The component carrier 1 can be configured as a laminate-type component carrier.

(19) The component carrier 1 comprises a stack comprising at least one electrically insulating layer structure 2 and at least one electrically conductive layer structure 3.

(20) The electrically insulating layer structure 2 can comprise at least one of the group consisting of resin, in particular reinforced or non-reinforced resin, for instance epoxy resin or Bismaleimide-Triazine resin, FR-4, FR-5, cyanate ester, polyphenylene derivate, glass, prepreg material, polyimide, polyamide, liquid crystal polymer, epoxy-based build-up film, polytetrafluoroethylene, a ceramic, and a metal oxide.

(21) The at least one electrically conductive layer structure 3 of the component carrier can comprise at least one of the group consisting of copper, aluminum, nickel, silver, gold, palladium, and tungsten, any of the mentioned materials being optionally coated with supra-conductive material such as graphene.

(22) The component carrier 1 further comprises a heat removing and electrically conductive base structure 4 which can form a kind of lead frame manufactured by PCB technologies, a component 5 which is connected to or arranged in a direct contact with the base structure 4 so as to at least partially protrude from the base structure 4 and so as to be laterally at least partially covered by an electrically insulating material of the stack, and an electrically conductive top structure 6 on or above a top main surface of the component 5.

(23) The component carrier 1 with the above-mentioned configuration exhibits improved heat spreading from the component 5, in particular by the heat removing and electrically conductive base structure 4. High currents flowing vertically through the component carrier 1 can be realized, and an effective thermal management by heat spreading can be achieved. The component carrier 1 can be used in applications of about 50 kW, for example in the field of automotive semiconductor applications. The base structure 6 is connected to the component 5 for heat spreading, in particular with a heat spreading angle α of 45°.

(24) The top structure 6 improves the rigidity of the component carrier 1. The top structure 6 comprises a base copper layer 6a which can be a copper foil adhered or laminated on the electrically insulating layer structure 2 above the component 5. On the base copper layer 6a, a copper layer 6b is arranged by electroplating (galvanic copper). Alternatively, the base copper layer 6a can be a relative thin copper layer (seed layer). The thin copper layer 6a can be applied chemically, electroless or by sputtering. On the thin copper layer 6a, a thicker copper layer 6b can be arranged by electroplating (galvanic copper). The copper layers 6a, 6b can have a thickness of 50 to 100 μm, preferable of 70±5 μm, respectively.

(25) The component 5 is embedded in the component carrier 1. The component 5 can be in particular selected from a group consisting of a power semiconductor component, in particular a power transistor chip, an electronic component, an electrically non-conductive and/or electrically conductive inlay, a heat transfer unit, a light guiding element, an energy harvesting unit, an active electronic component, a passive electronic component, an electronic chip, a storage device, a filter, an integrated circuit, a signal processing component, a power management component, an optoelectronic interface element, a voltage converter, a cryptographic component, a transmitter and/or receiver, an electromechanical transducer, an actuator, a microelectromechanical system, a microprocessor, a capacitor, a resistor, an inductance, an accumulator, a switch, a camera, an antenna, a magnetic element, a further component carrier, and a logic chip.

(26) The component 5 has two terminals 7 at a top main surface and one terminal 8 at a bottom main surface, wherein the terminal 8 at the bottom main surface is connected to the base structure 4 and the terminals 7 on the top surface are connected to the top structure 6. The term “connected” in the present context can include an electrical as well as a thermal link.

(27) The component 5 is laterally at least partially surrounded by a core 9. The core 9 can have a thickness of about 70 to 150 μm, preferably of 100 μm±5 μm.

(28) The base structure 4 can have a thickness, which is measured in a direction perpendicular to a main surface of the component carrier 1, of larger than 100 μm, in particular larger than 130 μm; and the top structure 6 can have a thickness of at least 50 μm, in particular of at least 70 μm; and the top structure 6 can have a thickness being smaller than a thickness of the base structure 4.

(29) At least 10% of a height of a sidewall of the component 5 can be contiguously covered with a material of the base structure 4, for example 100 μm of the sidewall of the component 5 can be contiguously covered with the material of the base structure 4. At least 10% of a height of the sidewall of the component 5 can be contiguously covered with the electrically insulating material of the stack.

(30) The component carrier 1 further comprises a bottom structure 16a, 16b having a base copper layer 16a which can be a copper foil adhered or laminated on an electrically insulating layer structure 2 below the component 5. On the base copper layer 16a, a copper layer 16b is arranged by electroplating (galvanic copper). Alternatively, the base copper layer 16a can be a relatively thin copper layer (seed layer). The thin copper layer 16a can be applied chemically, electroless or by sputtering. On the thin copper layer 16a, a thicker copper layer 16b can be arranged by electroplating (galvanic copper). The copper layers 16a, 16b can have a thickness of 50 to 100 μm, preferable of 70±5 μm, respectively.

(31) In summary, the component carrier 1 with the above-mentioned configuration exhibits an improved heat spreading from the component 5, in particular by the heat removing and electrically conductive base structure 4. The top structure 6 improves the rigidity of the component carrier 1.

(32) FIGS. 2 to 4 illustrate steps of a base concept of manufacturing an inner component carrier 100 according to an exemplary embodiment, where a component 5 is connected to a base structure 4.

(33) In a step S1, a core 9 made of an insulating material is provided, which has a cavity 91. The cavity 91 in the core 9 can be provided by mechanically drilling. A copper layer 10 is arranged on the core 9. The copper layer 10 can have a thickness for example of 70 μm. The copper layer 10 can be a copper foil. The core 9 with the copper layer 10 thereon can be a prefabricated board. The core 9 might originally have another copper layer (not shown) at the side opposite to the copper layer 10. In the embodiment of FIG. 2, this non-shown other copper layer has been etched away to reduce the thickness of the inner component carrier 100.

(34) A temporary carrier 14, in particular a sticky tape, is attached to the core 9 at a side opposite to that side where the copper layer 10 is arranged.

(35) A component 5 is placed on the temporary carrier 14 within the cavity 91. In the present embodiment, the component 5 is a MOSFET having a drain terminal 8 at one side and a source terminal 7 and a gate terminal 7 at the opposite side. The component 5 is placed with its source terminal 7 and its gate terminal 7 onto the temporary carrier 14 within the cavity 91 so that the drain terminal 8 is exposed at the top. The component 5 is placed face-down in the cavity 91, thus the source terminal 7 and the gate terminal 8 are arranged on the temporary carrier 14.

(36) In a step S2, the component 5 is fixed by a material of an electrically insulating layer structure 2 in the cavity 91. This material of the electrically insulating layer structure 2 can be an adhesive or a molding material. Alternatively, if the board comprising the core 9 and the copper layer 10 is made of a prepreg material, the board can be laminated by means of pressure and/or heat so that the prepreg material of the core 9 is molten and enters the cavity 91. After curing the prepreg material of the core 9, the component 5 is fixed within the cavity 91.

(37) On the one hand, the electrically insulating layer structure 2, which is described in step S2, does not cover the entire lateral surfaces of the component 5 so as to reserve a space which can later be filled by a thermal conductive material in order to improve the heat spreading. Alternatively, it is conceivable to remove a part of the electrically insulating layer structure 2, which is described in step S2, for example by etching, plasma etching, or a laser process.

(38) The electrically insulating layer structure 2, which is described in step S2, covers a part of lateral surfaces of the component 5 so as to prevent electro migration or a disruptive discharge from the terminals 7 of the component 5.

(39) In a step S3, the temporary carrier 14 is removed. In place of the temporary carrier 14, a thin copper layer 15 (seed layer) is applied to the core 9, the electrically insulating layer structure 2 and the terminals 7 of the component 5. The thin copper layer 15 can be applied chemically, electroless or by sputtering.

(40) The thin copper layer 15 can be composed of two horizontally extending regions, wherein a first region (at the left-hand side in step S3 of FIG. 3) is connected to the gate terminal 7 of the component 5, that means a gate line is realized in the thin copper layer 15. A second region (at the right-hand side in step S3 of FIG. 3) of the thin copper layer 15 is connected to the source terminal 7 of the component 5.

(41) The first and the second regions of the thin copper layer 15 can also be obtained by a conventional patterning process.

(42) In a first alternative in a step S4A in FIG. 3, a copper layer 11 is arranged on the copper layer 10 by electroplating (galvanic copper) or by use of a copper foil. The copper layer 11 contacts the terminal 8 of the component 5. In addition, the copper layer 11 fills the space between the component 5 on the one side and the core 9 and the copper layer 10 on the other side. As a result, the copper layer 11 laterally surrounds the component 5 and contacts the lateral sides of the component 5. Thus, the base structure 4 is composed of the copper layer 10 and the galvanic copper layer 11. The copper foil 10 and the galvanic copper layer 11 can have a thickness of 50 to 100 μm, preferable of 70±5 μm, respectively.

(43) At the other side of the inner component carrier 100, a copper layer 16 is arranged on the thin copper layer 15 by electroplating (galvanic copper). The copper layer 16 can have a thickness of 50 to 100 μm, preferable of 70±5 μm, respectively.

(44) In second alternative in a step S4B in FIG. 4, which is likewise performed after the step S3 in FIG. 3, an electrically insulating layer structure 2 is applied on the thin copper layer 15. Laser vias 31 are formed in this electrically insulating layer structure 2, wherein at least some of the laser vias 31 are connected with the source terminal 7 of the component 5. A copper layer 16 is then arranged on the electrically insulating layer structure 2 and in the vias 31, for example by providing a seed layer and subsequently electroplating (galvanic copper). The copper layer 16 can also comprise a copper foil.

(45) The product obtained after steps 4A and 4B, respectively, is the inner component carrier 100 which can be considered as an inner lead frame made by PCB technologies. The inner component carrier 100 is composed of the base structure 4, the component 5, and optionally the core 9, the copper layer(s) 10, 11 and the copper layer(s) 15, 16. The inner component carrier 100 is formed on panel level, that means the inner component carrier 100 is not formed on wafer level. The inner component carrier 100 can have a planar size of about 7×7 mm.sup.2 and a height of about 210 μm.

(46) After having completed the inner component carrier 100 in the steps S4A and S4B, respectively, the inner component carrier 100 is connected to or integrated in an outer component carrier such as a printed circuit board which is likewise manufactured on panel level. For example, the inner component carrier 100 can be embedded into a cavity of the outer component carrier. After that, the cavity can be closed by a molding, adhesive or prepreg material, and further conductive layers can be arranged thereon. The inner component carrier 100 and the outer component carrier together form the component carrier 1.

(47) It is possible to manufacture some of the copper layer(s) 10, 11 and of the copper layer(s) 15, 16 not within the base concept depicted in FIGS. 2 to 4 but in later steps during manufacturing the outer component carrier.

(48) According to the present invention, the inner component carrier 100 for example as a PCB lead frame including the component 5 can be integrated into the outer component carrier such as a lower cost PCB. With this concept, a cost saving solution is given by prefabrication of embedded components 5 in an inner PCB lead frame 100 on panel level with utilization of semiconductors as components 5. The concept enables to create thick copper lead frames with common embedding technologies and PCB technologies and realizes a fully packaged component 5. The manufacturing method can be split into manufacturing a high current PCB, i.e. the inner component carrier 100, and a low cost PCB, i.e. the outer component carrier, with higher routing densities. The cost efficiency is improved due to the implementation of a costly lead frame (inner component carrier 100) with the fully packaged component 5 into the cheaper simple PCB (outer component carrier).

(49) Furthermore, a known-good-package (KGP) test capability of 100% of the inner component carrier 100 can be achieved before integrating the same into the outer component carrier such as a final PCB build.

(50) In the embodiment of the component carrier 1 in FIG. 1 (as well as in FIGS. 5 and 6), the copper layers 15, 16 depicted in steps S4A and S4B of FIGS. 2 to 4 are omitted. After having inserted the inner component carrier 100 into the cavity of the outer component carrier, the cavity is closed by a prepreg or molding material 20 which forms a part of the electrically insulating layer structure 2. Vias 21 such as copper-filled laser holes are provided in the molding material 20 to contact the terminals 7 (gate and source) of the component 5.

(51) After that, the top structure 6 is arranged on the prepreg or molding material 20. The top structure 6 can be formed by at least one copper foil such as the copper layer 6a.

(52) FIG. 5 illustrates a cross-sectional view of a component carrier 1 according to an exemplary embodiment of the invention. The embodiment in FIG. 5 is similar to the embodiment in FIG. 1 except for the following differences. The inner component carrier 100 further comprises a sintered layer 17, for example of copper, and a relative thick copper layer 18 which can be a copper foil having a thickness for example of 300 μm. The sintered layer 17 is sintered/soldered/diffusion soldered on the galvanic copper layer 11 which has been provided in step S4A or step S4B in FIGS. 3 and 4, respectively. The sintered layer 17 can have a thickness of about 50 μm. The copper layer 18 is adhered by means of the sintered layer 17. The sintered layer 17 can be a patterned sintered layer 17 with openings for a contact to the component 5, for example between the drain terminal 8 of the component 5 and the base structure 4.

(53) In the embodiment of FIG. 5, the inner component carrier 100 is composed of the base structure 4, which additionally comprises the sintered layer 17 and the thick copper layer 18, the component 5, and optionally the core 9, the copper layer(s) 10, 11 and the copper layer(s) 15, 16 provided in the base concept depicted in FIGS. 2 to 4.

(54) The core 9 can have a thickness of 70 to 150 μm, preferably of 100 ±5 μm, and the galvanic copper layer 11 can have a thickness of about 50 to 100 μm, preferably of 70±5 μm.

(55) FIG. 6 illustrates a cross-sectional view of a component carrier 1 according to an exemplary embodiment of the invention. The embodiment in FIG. 6 is similar to the embodiment in FIG. 1 except for the following differences. The inner component carrier 100 further comprises an adhesive layer 13 and a relative thick copper layer 18 which can be a copper foil having a thickness for example of 300 μm. The adhesive layer 13 is applied on the galvanic copper layer 11 which has been provided in step S4A or step S4B in FIGS. 3 and 4, respectively. The adhesive layer 13 can have a thickness of about 10 μm. The copper layer 18 is adhered by means of the adhesive layer 13.

(56) The adhesive layer 13 can be a patterned adhesive layer 13 with openings for a contact to the component 5, for example between the drain terminal 8 of the component 5 and the base structure 4.

(57) In the embodiment of FIG. 6, the inner component carrier 100 is composed of the base structure 4, which in turn comprises the adhesive layer 13 and the thick copper layer 18, the component 5, and optionally the core 9, the copper layer(s) 10, 11 and the copper layer(s) 15, 16 provided in the base concept depicted in FIGS. 2 to 4.

(58) Furthermore, the component 5 in the embodiment of FIG. 6 is connected to the base structure 4 so as to completely protrude from the base structure 4 and so as to be laterally completely covered by the electrically insulating material of the stack.

(59) FIGS. 7 to 10 illustrate steps of a base concept of manufacturing an inner component carrier 100 according to the exemplary embodiment.

(60) In a step S5, a state before lamination is shown. Reference sign 13 designates an adhesive layer, and reference sign 24 designates a relatively thick copper foil which comprises a mechanically drilled hole 25. The adhesive layer 13 is placed between the copper foil 24 and a copper layer, for example a copper layer 11 which is manufactured similar to the copper layer 11 in steps S4A or S4B in FIGS. 3 and 4, respectively.

(61) In a step S6, a state after lamination is shown. A part of adhesive material of the adhesive layer 13 entered the hole 25.

(62) In a step S7, a desmearing process is carried out where the part of the adhesive material of the adhesive layer 13 is removed from the hole 25 to clean the hole 25. The adhesive layer 13 is removed up to the copper layer 11. The desmearing process can be carried out by plasma etching.

(63) In a step S8, a copper layer 26 is filled in the hole 25 to contact the copper layer 11 of the component 5, that means to electrically connect the terminal 8 of the component 5 to the copper foil 24. At the end, the inner component carrier 100 is completed.

(64) FIGS. 11 to 13 illustrate steps of a base concept of manufacturing an inner component carrier 100 according to an exemplary embodiment.

(65) The inner component carrier 100 in FIG. 11 starts out from step S2 in FIG. 2. In this case, the component carrier 1 is manufactured using the temporary carrier 14 which is temporarily attached to a main surface of the component 5 directed to the top structure 6. The temporary carrier 14, which is shown in FIG. 2, is removed in FIG. 11. In place of the temporary carrier 14, an electrically insulating layer structure 2 is applied in place of the temporary carrier 14. The electrically insulating layer structure 2 can be made of a molding material or a prepreg material. A copper layer 19 is applied on this electrically insulating layer structure 2. This copper layer 19 can be a copper foil or a thin copper layer similar to the thin copper layer 15 in FIG. 3, which is applied chemically, electroless or by sputtering.

(66) Alternatively, the inner component carrier 100 in FIG. 11 can start out from a situation which differs from the situation in step S2 in FIG. 2 in that the temporary carrier 14 is not arranged on the core 9 but on the copper layer 10, and the component is arranged face-up in the cavity 91, i.e., the drain terminal 8 is adhered to the temporary carrier 14. In this case, the component carrier 1 is manufactured by use of the temporary carrier 14 which is temporarily attached to a main surface of the component 5 directed to the base structure 4.

(67) After that, an electrically insulating layer structure 2 is filled in the cavity 91, the temporary carrier 14 is removed and the copper layer 19 is arranged on the electrically insulating layer structure 2 so as to obtain the intermediate inner component carrier as shown in FIG. 11.

(68) In FIG. 12, the copper layer 19 and the underlying electrically insulating layer structure 2 are patterned, for example by conventional photo-imageable or lithographic processes and laser drilling processes, respectively. As a result, holes such as conical holes are formed in the copper layer 19 and the underlying electrically insulating layer structure 2.

(69) It is possible to perform a laser ablation process in order to remove a part of the electrically insulating layer structure 2 around the component 5.

(70) In FIG. 13, the holes 22 are filled by an electrically conductive material such as copper so that vias 21 are formed to contact the terminals 7 of the component 5, and a copper layer 16 is arranged on top.

(71) A copper layer 11 is arranged on the copper layer 10 by electroplating (galvanic copper) or by use of a copper foil. The copper layer 11 contacts the terminal 8 of the component 5. In addition, the copper layer 11 fills the space between the component 5 on the one side and the core 9 and the copper layer 10 on the other side. As a result, the copper layer 11 laterally surrounds the component 5 and contacts the lateral sides of the component 5.

(72) Thus, the base structure 4 is composed of the copper layer 10 and the galvanic copper layer 11.

(73) A copper layer 16 is arranged on the electrically insulating layer structure 2. The copper layer 16 can be a copper foil, or it can be a galvanic copper layer which is applied by electroplating on an underlying seed layer.

(74) For example, the copper layer 16, the copper layer 10 and the copper layer 11 can each have a thickness between 50 and 100 μm, preferable of 70±5 μm.

(75) FIGS. 14 to 16 illustrate steps of a base concept of manufacturing an inner component carrier 100 according to an exemplary embodiment.

(76) In a step S11, a core 9 made of an insulating material is provided, which has a cavity 91. The cavity 91 in the board can be provided by mechanically drilling. A copper layer 10 is arranged on the core 9. The copper layer 10 can be a copper foil, for example in a thickness of 70 μm. The core 9 with the copper layer 10 thereon can be a prefabricated board. The core 9 has another copper layer 23 at the side opposite to the copper layer 10.

(77) A temporary carrier 14, in particular a sticky tape, is attached to the other copper layer 23. A component 5 is placed on the temporary carrier 14 within the cavity 91. In the present embodiment, the component 5 is a MOSFET having a drain terminal 8 at one side and a source terminal 7 and a gate terminal 7 at the opposite side. The component 5 is placed with its source terminal 7 and its gate terminal 7 onto the temporary carrier 14 within the cavity 91 so that the drain terminal 8 is exposed at the top. The component 5 is placed face-down in the cavity 91, that means the source terminal 7 and the gate terminal 7 are arranged on the temporary carrier 14.

(78) In a step S12, the component 5 is fixed by a material of an electrically insulating layer structure 2 in the cavity 91. This material of the electrically insulating layer structure 2 can be an adhesive or a molding material. Alternatively, if the board comprising the core 9 and the copper layer 10 is made of a prepreg material, the board can be laminated by means of pressure and/or heat so that the prepreg material of the core 9 is molten and enters the cavity 91.

(79) After curing the prepreg material of the core 9, the component 5 is fixed within the cavity 91.

(80) It is possible to perform a laser ablation process in order to remove a part of the electrically insulating layer structure 2 around the component 5.

(81) In a step S13, the temporary carrier 14 is removed. In place of the temporary carrier 14, a thin copper layer 15 (seed layer) can be applied to the other copper layer 23, the electrically insulating layer structure 2 and the terminals 7 of the component 5. The thin copper layer 15 can be applied chemically, electroless or by sputtering.

(82) The thin copper layer 15 can be composed of two horizontal regions, wherein a first region (at the left-hand side in step S13 of FIG. 15) is connected to the gate terminal 7 of the component 5, that means a gate line is realized in the thin copper layer 15. A second region (at the right-hand side in step S13 of FIG. 15) of the thin copper layer 15 is connected to the source terminal 7 of the component 5. The first and the second region of the thin copper layer 15 can also be obtained by a conventional patterning process.

(83) In a step S14, a partial electrically insulating layer structure 2 is applied on the thin copper layer 15 to cover the first region of the thin copper layer 15. This electrically insulating layer structure 2 can be provided with vias 31. This partial electrically insulating layer structure 2 can be applied by an inkjet process, by screen-printing, by a three-dimensional printing process, etc.

(84) A copper layer 16 is arranged by electroplating (galvanic copper) on this electrically insulating layer structure 2 and on the second region of the thin copper layer 15. The copper layer 16 can optionally be patterned by conventional lithography processes.

(85) A copper layer 11 is arranged on the copper layer 10 by electroplating (galvanic copper) or by use of a copper foil. In addition, the copper layer 11 fills the space between the component 5 on the one side and the core 9 and the copper layer 10 on the other side. As a result, the copper layer 11 laterally surrounds the component 5 and contacts the lateral sides of the component 5. The copper layer 11 further contacts the terminal 8 of the component 5.

(86) Thus, the base structure 4 is composed of the copper layer 10 and the galvanic copper layer 11.

(87) It should be noted that the term “comprising” does not exclude other elements or steps and the article “a” or “an” does not exclude a plurality. Also, elements described in association with different embodiments may be combined.

(88) Implementation of the invention is not limited to the preferred embodiments shown in the figures and described above. Instead, a multiplicity of variants is possible which variants use the solutions shown and the principle according to the invention even in the case of fundamentally different embodiments.