METHOD FOR PRODUCING REFLECTIVE OPTICAL ELEMENTS FOR THE EUV WAVELENGTH RANGE, AND REFLECTIVE OPTICAL ELEMENTS FOR THE EUV WAVELENGTH RANGE
20230253129 · 2023-08-10
Assignee
Inventors
Cpc classification
G03F7/70958
PHYSICS
G03F7/70316
PHYSICS
G02B5/0816
PHYSICS
International classification
Abstract
Provided for herein are methods for producing reflective optical elements for the EUV wavelength range which have grating structures or which include structures that can serve as phase shifters. The methods may include the following operations: applying a structurable layer to a substrate, applying a reflective coating to the substrate that has been provided with the structurable layer, and locally irradiating the structurable layer. The structurable layer may be irradiated before or after application of the reflective coating.
Claims
1. A method of producing reflective optical elements for an EUV wavelength range, comprising the steps of: applying a structurable coating to a substrate, wherein the structurable coating comprises at least two layers of different materials; applying a reflective coating to the substrate provided with the structurable coating; and locally irradiating the structurable coating, wherein the different materials of the structurable coating mix exothermically and/or react exothermically with one another under influence of the irradiating, thereby introducing permanent structures by local irradiation.
2. The method of claim 1, wherein locally irradiating the structurable coating is performed prior to applying the reflective coating.
3. The method of claim 1, wherein locally irradiating the structurable coating is performed after applying the reflective coating.
4. The method of claim 1, wherein locally irradiating the structurable coating comprises locally irradiating the structurable coating with electrons.
5. The method of claim 1, wherein the different materials are chosen such that, on mixing or reacting under the influence of local irradiation, the free Gibbs energy is within a range between −10 kJ/mol and −900 kJ/mol.
6. The method of claim 1, further comprising polishing at least one layer of the at least two layers of the structurable coating.
7. The method of claim 1, wherein the different materials mix and/or react with one another under the influence of the local irradiation, resulting in a change in thickness of the structurable coating, and wherein layer thicknesses of the at least two layers are chosen such that there is no further change in thickness after the change in thickness of the structurable coating has been attained.
8. A reflective optical element produced by the method of claim 1.
9. A reflective optical element for an EUV wavelength range, comprising: a substrate; a reflective coating; and a structurable coating, wherein the structurable coating comprises a multilayer system disposed between the substrate and the reflective coating, and the structurable coating comprises at least two layers each of different materials, wherein the different materials of the at least two layers react exothermically with one another or mix exothermically.
10. The reflective optical element of claim 9, wherein the at least two layers have low mutual solubility at room temperature and high mutual solubility at temperatures of 300° C. or higher.
11. The reflective optical element of claim 9, wherein the structurable coating has lateral variations in thickness.
12. The reflective optical element of claim 9, wherein the structurable coating comprises at least one material having a density of 12 g/cm.sup.3 or more.
13. The reflective optical element of claim 9, wherein the structurable coating comprises at least two layers of each of the different materials.
14. The reflective optical element of claim 9, wherein the structurable coating comprises a multitude of layers of the different materials arranged in alternation.
15. The reflective optical element of claim 9, wherein the structurable coating comprises materials from the group consisting of tungsten, rhenium, osmium, iridium, tantalum, hafnium, ruthenium, platinum, gold, alloys thereof, oxides thereof, carbides thereof, nitrides thereof and borides thereof.
16. The reflective optical element of claim 15, wherein the structurable coating comprises a further material from the group consisting of carbon, boron, silicon, boron carbide and boron nitride.
17. The reflective optical element of claim 9, wherein the structurable coating comprises a first material from the group consisting of tungsten, tantalum and indium, and comprises a second material from the group consisting of vanadium, titanium, rhodium, platinum and chromium.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0036] The techniques disclosed herein are to be elucidated in detail with reference to a working examples described with reference to
[0037]
[0038]
[0039]
[0040]
[0041]
[0042]
DETAILED DESCRIPTION
[0043]
[0044] The thicknesses of the individual layers 56, 57 and also of the repeating stacks 55 may be constant over the entire multilayer system 54 or vary over the area or the total thickness of the multilayer system 54, depending on what spectral or angle-dependent reflection profile or what maximum reflectivity at the operating wavelength is to be achieved. When the layer thicknesses over the entire multilayer system 54 are essentially constant, reference is also made to a period 55 rather than a stack 55. The reflection profile may also be influenced in a targeted manner by supplementing the basic structure composed of absorber 57 and spacer 56 using additional materials that are more and less absorbent. The use of such additional materials may increase the possible maximum reflectivity at the respective working wavelength. To that end, absorber and/or spacer materials in some stacks can be mutually interchanged, or the stacks can be constructed from more than one absorber and/or spacer material. Furthermore, it is also possible to provide additional layers as diffusion barriers between spacer and absorber layers 56, 57. A material combination that is customary for, for example, an operating wavelength of 13.4 nm is molybdenum as the absorber material and silicon as the spacer material. A period 55 for such an operating wavelength may be a thickness of approximately 6.7 nm, with the spacer layer 56 usually being thicker than the absorber layer 57. Further typical material combinations are, among others, silicon-ruthenium or molybdenum-beryllium. In addition, a protective layer 53, possibly also of multilayer design, can be provided on the multilayer system 54.
[0045] Typical substrate materials for reflective optical elements for EUV lithography are silicon, silicon carbide, silicon-infiltrated silicon carbide, quartz glass, titanium-doped quartz glass, glass and glass ceramic. Especially in the case of such substrate materials, it is additionally possible to provide a layer between reflective coating 54 and substrate 59 which is composed of a material having high absorption for radiation in the EUV wavelength range which is used in the operation of the reflective optical element 50 in order to protect the substrate 59 from radiation damage, for example unwanted compaction. Furthermore, the substrate can also be composed of copper, aluminum, a copper alloy, an aluminum alloy or a copper-aluminum alloy.
[0046] The structurable coating 60 may include at least two layers, each of the two layers being of a different material. It may preferably include a multitude of layers of at least two materials in an alternating arrangement. In the example shown in
[0047] The more layers 63, 64 that are provided, the more interfaces there are at which a reaction or mixing can take place. Advantageously, at least one of the materials chosen has high absorption for the irradiation used to introduce the activation energy, in order to: first be able to sufficiently convert the irradiation energy to activation energy, and second to be able to protect the substrate 59 from damage by the structuring irradiation. Such high absorption may additionally or alternatively provide high absorption for the EUV radiation used in operation of the reflective optical element 50 in order to protect the substrate 59 from corresponding radiation damage. For protection of the substrate 59 from the structuring irradiation, and if appropriate additionally against the EUV radiation in operation, it is also possible to provide an additional layer between structurable coating 60 and substrate 59. If structuring is accomplished by irradiation with electrons, it may be possible to, for example, provide a layer comprising a metal having high electron absorption. Purely by way of example, for electrons of energy 10 keV, for instance, it may be possible to provide a structurable coating 60 having tungsten layers 63 or 64 and a total thickness of about 300 nm, and for electrons of energy about 20 keV, a total thickness of about 600 nm.
[0048] It is optionally possible to provide a dedicatedly polishable layer between the structurable coating 60 and the reflective coating 54, in order that any roughening of the structurable coating 60 does not continue into the reflective coating 54 and the reflectivity of the reflective optical element 50 is not reduced. In further variants, the structurable coating 60 may be formed from two or more subsections each composed of at least one layer, with a polishable layer disposed between every two subsections. Any appropriate polishing method may be used without deviating from the disclosed techniques, including, for example, ion-assisted polishing, plasma-assisted polishing, reactive ion-assisted polishing, reactive plasma-assisted polishing, plasma immersion polishing, bias plasma-assisted polishing, polishing via magnetron atomization with pulsed DC current, and/or atomic layer polishing.
[0049] Alternatively or additionally, polishing may be conducted on at least one or more, or optionally even on all, of layers 63, 64 of the structurable coating. This has been found to be advantageous to reduce the surface roughness of the finished reflective optical element, especially in the case of structurable coatings having relatively thick layers, which could otherwise have an adverse effect on reflectivity. The polishing may be conducted either before, during or after the deposition of the at least one layer, in order to reduce any roughening effect. Irrespective of the juncture at which the polishing is conducted, any suitable polishing method may be used, including, for example, ion-assisted polishing, plasma-assisted polishing, reactive ion-assisted polishing, reactive plasma-assisted polishing, plasma immersion polishing, bias plasma-assisted polishing, polishing via magnetron atomization with pulsed DC current, and/or atomic layer polishing.
[0050] In the working example of reflective optical element 51 shown in
[0051]
[0052] In order to introduce the activation energy needed to trigger the reaction or the mixing of the materials of structurable coating 62, in the example presented here, it is irradiated with electrons (symbolized by the wavy arrows). This has the advantage that both the electrical energy and the diameter of the electron beam can be adjusted very accurately over a wide range. For instance, it has been found to be useful to irradiate with electrons within an energy range between 5 keV and 80 keV, preferably 5 keV to 40 keV, and more preferably 10 keV to 25 keV, in order to: first penetrate through the reflective coating and to impair it as little as possible, and second not to damage the substrate. In relation to the diameter of the electron beam, although it is also possible to work with two or more electron beams successively or in parallel, preference is given to working with diameters in the range between 5 nm and 1000 μm. Diameters closer to 1000 μm, for example, may be suitable to introduce binary gratings, for instance, for bending undesirable radiation in the infrared region out of the beam path. With diameters closer to 5 nm, it is possible to introduce, for example, highly resolved structures that act as phase shift masks.
[0053] A local change in the thickness of the structurable coating caused by the local irradiation of the structurable coating may cause the structuring of this layer. The variations in thickness may correlate inter alia with structural and/or stoichiometric differences between the materials at the sites of different density. In the example shown in
[0054] In the examples shown in
[0055] In a first preferred variant, the materials of layers 68, 69 are chosen such that they have very low mutual solubility at room temperature and high mutual solubility at temperatures of 300° C. or higher. In this variant, the structurable coating 62 is in a metastable state at room temperature. If it is heated to a sufficiently high temperature locally by energy input by irradiation, mixing of these materials can take place, which can lead to a change in density and hence structuring. More preferably, in these variants, the structurable coating 62, 62′ comprises a first material from the group consisting of tungsten, tantalum and iridium, and comprises a further material from the group consisting of vanadium, titanium, rhodium, platinum and chromium.
[0056] In a further preferred variant, the structurable coating 62, 62′ includes one or more of the materials from the group consisting of tungsten, rhenium, osmium, iridium, tantalum, hafnium, ruthenium, platinum, gold, alloys thereof, oxides thereof, carbides thereof, nitrides thereof and borides thereof. These materials have the advantage that they can protect the substrate from radiation damage in operation of the reflective optical element 52,52′ with EUV radiation. They also have a high absorption for electrons, such that the electron energy can be converted particularly efficiently to activation energy. Owing to these properties, the total thickness of the structurable coating 62, 62′ can be kept lower than in the case of materials having lower absorption for electrons and EUV radiation, such that any layer stress that occurs can be minimized in a simpler manner. In particular, it has been found to be useful for exothermic reactions when the structurable coating 62, 62′ includes at least one further material from the group consisting of carbon, boron, silicon, boron carbide and boron nitride. Boron carbide and boron nitride may also be applied in non-stoichiometric ratios as B.sub.xC.sub.y or B.sub.xN.sub.z, in order that the individual elements boron, carbon and nitrogen can react efficiently, especially with the aforementioned metals. Carbon layers can preferably be applied as amorphous or as diamond-like layers.
[0057] It should be pointed out that layers of tantalum, platinum and titanium, in particular, have the property of plastic adaptability to deformations. If the structurable coating should conclude on the substrate side with a layer of chromium, tantalum, niobium, molybdenum, titanium, or one of their alloys or compounds, and the substrate should be composed of silicon, silicon carbide, silicon-infiltrated silicon carbide, quartz glass, titanium-doped quartz glass, glass and glass ceramic, an adhesion promoter layer between the structurable coating and the substrate may have a particularly good adhesion effect.
[0058] The following list is a non-exhaustive list of illustrative possible material combinations:
TABLE-US-00001 Starting materials Final material(s) Free Gibbs energy W + C WC −38.3 kJ/mol W + 2 Si WSi2 −90.9 kJ/mol Re + 2 Si ReSi2 −90.3 kJ/mol Hf + 2 B HfB2 −332 kJ/mol Hf + C HfC −249 kJ/mol 3 Hf + B4C 2 HfB2 + HfC −851 kJ/mol TaB2 + Hf HfB2 + Ta −126 kJ/mol WC + Ta TaC + W −104 kJ/mol RuO2 + Hf Ru + HfO2 −836 kJ/mol RuO2 + Re ReO2 + Ru −138 kJ/mol SiO2 + Hf HfO2 + Si −232 kJ/mol TaB2 + HfC TaC + HfB2 −19.7 kJ/mol
[0059] An estimate of the change in thickness resulting from radiation is elucidated by the example that follows with reference to a structurable coating that includes a multitude of layers of tungsten and silicon. The density and molar mass of the tungsten and silicon starting materials may be used to calculate the molar volume of each. Proceeding from a density of 19.25 g/cm.sup.3 and a molar mass of 183.84 for tungsten and a density of 2.336 g/cm.sup.3 and a molar mass of 2.09 g/mol for silicon, a molar volume of 9.47 cm.sup.3/mol is found for tungsten and of 12.06 cm.sup.3/mol for silicon. For tungsten silicide which is formed by irradiation-induced reaction, a density of 9.3 g/cm.sup.3 and a molar mass of 240.01 g/mol give a molar volume of 25.81 g/mol. Taking into account that the molar ratio of tungsten to silicon should be 1:2 in the structurable coating, the shrinkage of the structurable coating as a result of the radiation, if it is fully converted to tungsten silicide at the irradiated sites, is about 23%. This means that the structurable coating should have a total thickness of 4.2 nm if the aim is to lower it by 1 nm. This procedure can be applied correspondingly to any desired material combination.
[0060] It has been found to be particularly advantageous, in order to have particularly good control over changes in layer thickness within the structurable coating, when the layer thicknesses are chosen such that there is no further change in thickness after attainment of a desired change in thickness of the structurable coating. In other words, the thicknesses of the individual layers of the structurable coating should then be chosen such that, after a certain radiation dose, the individual layers have fully mixed or reacted with one another, such that the structuring process cannot continue even if irradiation lasts for longer, i.e., the structuring process is self-terminating.
[0061]
[0062] By contrast, in the example shown in
[0063] Both in the variant shown in
[0064] In a modification of these procedures, for instance via different irradiation parameters such as energy, dose, mode of irradiation and/or corresponding design of the structurable coating by division into two or more substacks and variation of layer material and thickness, the structuring may be performed by local irradiation in two or more component steps, in which the structuring is conducted first in the region of the structurable coating remote from the substrate, and the structuring is conducted ever closer to the substrate in the subsequent irradiation step(s) by working at different penetration depths.
[0065] The above elucidations relating to the procedure in the production of the proposed reflective optical elements and especially in the irradiation of the structurable coating for structuring purposes are applicable analogously to the two latter options as well.
[0066] It should be pointed out that, in the production of reflective optical elements having a structurable coating having at least two layers each of different material, reflectivity can be increased by polishing one of the layers, preferably two or more or even all layers of the structurable coating, by irradiation with ions in the coating operation or after the application of the respective layer and before the next layer is applied thereto. Too high a surface roughness can otherwise lead to poorer reflectivity than would be expected on the basis of the construction of the reflective coating. A particularly positive effect has been observed in the case of silicon layers.
[0067] The reflective optical elements for the EUV wavelength range that are proposed here may be used as EUV mirrors, for example in EUV lithography devices or in mask or wafer inspection systems. In EUV lithography devices, they may also be used as masks.
[0068] If necessary, these reflective optical elements may be repaired by measuring the surface profile of the reflective coating and comparing it with a target profile and, if there are one or more sites in the surface profile having a variance from the target profile, irradiating the substrate and/or the structurable coating at this/these sites. By local irradiation of the substrate and the structurable coating, it is possible to introduce a change in thickness at that location, especially by a change in density, the effect of which can be that the variance of the actual surface profile from the target profile becomes less at that location. Advantageously, electron irradiation is also employed for the repair, it being possible to use electrons of higher energy than in the structuring already affected in order to be able to achieve higher penetration depth and hence a local change in density in deeper regions.
[0069] The above description is intended by way of example only. Although the techniques are illustrated and described herein as embodied in one or more specific examples, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made within the scope and range of equivalents of the claims.
REFERENCE SIGNS
[0070] 50 Reflective optical element [0071] 51 Reflective optical element [0072] 52, 52′ Reflective optical element [0073] 53 Protective layer [0074] 54, 54′ Reflective coating [0075] 55 Stack [0076] 56 Absorber [0077] 57 Spacer [0078] 59 Substrate [0079] 60 Structurable coating [0080] 61 Structurable coating [0081] 62, 62′ Structurable coating [0082] 63 First layer [0083] 64 Second layer [0084] 65 First layer [0085] 66 Second layer [0086] 67 Third layer [0087] 68 First layer [0088] 69 Second layer [0089] 501 Method step [0090] 503 Method step [0091] 505 Method step [0092] 601 Method step [0093] 603 Method step [0094] 605 Method step