A METAMATERIAL-BASED VARIABLE CAPACITOR STRUCTURE

Abstract

The present invention discloses a metamaterial-based variable capacitor structure, comprising the first substrate, the second substrate, the metamaterial dielectric layer, the metal floor layer between the first substrate and the metamaterial dielectric layer, the gaps and isolation holes periodically arranged on metal floor layer, the microstrip line between the second substrate and the metamaterial dielectric layer, the periodically loaded branches, the bias line and the choke branch on the microstrip line, and two feeding terminals on both ends of microstrip line. The capacitance value of the metamaterial-based capacitor with variable dielectric constant is adjusted by controlling the voltage applied to the said bias line, thereby realizing the time-frequency response, frequency selection, phase shift control, transmission matching, etc. based on the variable capacitor structure.

Claims

1. A metamaterial-based variable capacitor structure, comprising: a first substrate and the second substrate set oppositely, and a metamaterial dielectric layer located between the first substrate and the second substrate; a metal floor layer between the first substrate and a metamaterial dielectric layer; at least 2 gaps periodically arranged on the metal floor layer (104); and a microstrip line between the second substrate and the metamaterial dielectric layer, and a bias line loaded on the microstrip line.

2. The metamaterial-based variable capacitor structure according to claim 1, characterized in that the microstrip line has a periodically loaded branches, and two feeding terminals.

3. The metamaterial-based variable capacitor structure according to claim 1, characterized in that the metamaterial dielectric layer is composed of one or multiple layers of variable dielectric constant material, and the said material can be either the liquid crystal or ferroelectric film.

4. The metamaterial-based variable capacitor structure according to claim 1, characterized in that the said structure further comprises: the metal floor layer also has an isolation hole, and the bias line is further loaded with a choke branch.

5. The metamaterial-based variable capacitor structure according to claim 1, characterized in that gaps are centered relative to the microstrip line, or are a certain distance away from the microstrip line, and the arrangement of the gaps is uniformly periodic, non-uniformly periodic, uniformly symmetrical, uniformly crossed, or non-uniformly symmetrical or crossed.

6. The metamaterial-based variable capacitor structure according to claim 4, characterized in that the isolation hole can be rectangular, circular, triangular, or rhombic; there can be only one or many isolation holes in series along the bias line.

7. The metamaterial-based variable capacitor structure according to claim 4, characterized in that the said choke branch can be fan-shaped, triangular, linear, or rectangular; there can be only one or many choke branches on the same side or both sides of bias line.

8. The metamaterial-based variable capacitor structure according to claim 2, characterized in that branches can be arranged in the cross or non-cross type; the length of said branches can be equal or not equal to that of the gaps; the branches can be uniformly or non-uniformly arranged; the said branches can be corresponding or not corresponding to the gaps, and there is no gap on the position of the branch directly facing the metal floor layer.

9. The metamaterial-based variable capacitor structure according to claim 2, characterized in that the said bias line can be loaded on the branches of the microstrip line.

10. The metamaterial-based variable capacitor structure according to claim 1, characterized in that the said microstrip line and gaps can be arranged linearly or in the curve type of 180° or 90°; the said gaps can be fan-shaped or rectangular; the said gaps can be uniformly or non-uniformly arranged.

Description

DESCRIPTION OF DRAWINGS

[0025] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the detailed description of the preferred embodiments below. The drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the invention. Moreover, the same reference numerals are used throughout the drawings to indicate the same parts. In the drawings:

[0026] FIG. 1 is the side view of a metamaterial-based capacitor structure according to a specific embodiment 1 of the present invention;

[0027] FIG. 2 is the top view of the first substrate 102 lower surface of a metamaterial-based capacitor structure according to a specific embodiment 1 of the present invention;

[0028] FIG. 2(a) is the top view of the second substrate 103 upper surface of a metamaterial-based capacitor structure according to a specific embodiment 1 of the present invention;

[0029] FIG. 2(b) is the top view of a metamaterial-based capacitor structure according to a specific embodiment 1 of the present invention;

[0030] FIG. 3 is the top view of a metamaterial-based capacitor structure according to a specific embodiment 2 of the present invention;

[0031] FIG. 4 is the top view of the first substrate (102) lower surface of a metamaterial-based capacitor structure according to a specific embodiment 2 of the present invention;

[0032] FIG. 4(a) is the top view of the second substrate (103) upper surface of a metamaterial-based capacitor structure according to a specific embodiment 2 of the present invention;

[0033] FIG. 4(b) is the top view of a metamaterial-based capacitor structure according to a specific embodiment 2 of the present invention;

[0034] FIG. 4(c) is the equivalent circuit model according to a specific embodiment 2 of the present invention;

[0035] FIG. 5 is the top view of a metamaterial-based capacitor structure according to a specific embodiment 3 of the present invention;

[0036] FIG. 6 is the top view of a specific embodiment 1 relating to the bias line made from ITO (indium tin oxide), NiCr (nickel chromium), or some other material with a resistivity greater than 1×105Ω.Math.m;

[0037] FIG. 6(a) is the top view of a specific embodiment 2 relating to the bias line made from ITO (indium tin oxide), NiCr (nickel chromium), or some other material with a resistivity greater than 1×105Ω.Math.m;

[0038] FIG. 6(b) is the top view of a specific embodiment 3 relating to the bias line made from ITO (indium tin oxide), NiCr (nickel chromium), or some other material with a resistivity greater than 1×105Ω.Math.m;

[0039] FIG. 7 is the optional shape schematic diagram of the isolation hole 106 on the floor layer 104 of the present invention;

[0040] FIG. 8 is the optional shape schematic diagram of the choke branch 110;

EMBODIMENTS OF THE PRESENT INVENTION

[0041] Hereinafter, the illustrative embodiments of the present disclosure will be described in more detail with reference to the attached drawings. Although the illustrative embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited to the embodiments set forth herein. On the contrary, these embodiments are provided to get a thorough understanding of the present disclosure, and to fully convey the scope of the present disclosure to the technicians in the art.

Embodiment 1

[0042] As shown in FIG. 1, the embodiment of the present invention provides a metamaterial-based variable capacitor structure 101, comprising: the first substrate 102 and the second substrate 103 set oppositely, and the metamaterial dielectric layer 107 located between the first substrate 102 and the second substrate 103, the metal floor layer 104 located between the first substrate 102 and the metamaterial dielectric layer 107, at least two periodically arranged gaps 105 and isolation holes 106 on the metal floor layer 104, the microstrip line 108, bias line 109 and choke branch 110 located between the second substrate 103 and the metamaterial dielectric layer 107, and two feeding terminals 111 and 112 on both ends of microstrip line 108.

[0043] FIGS. 2, 2(a) and 2(b) are respectively the top views of the first substrate 102 lower surface, the second substrate 103 upper surface, and overall body of the metamaterial-based variable capacitor structure according to a specific embodiment 1 of the present invention. In this structure, the periodically arranged gaps 105 are slotted on floor layer 104 directly facing the microstrip line 108 to form the slow-wave transmission structure, so that the transmission route required for phase shift 360° in the metamaterial dielectric layer is shortened, thereby effectively reducing the overall structure size and obtaining better FOM.

[0044] The metamaterial-based variable capacitor structure is composed of the metal floor layer 104, the periodically arranged gaps 105, the metamaterial dielectric layer 107, and the microstrip line 108. Among them, the metamaterial dielectric layer 107 is composed of one or multiple layers of variable dielectric constant material, and the material can be the liquid crystal, ferroelectric thin film BST, etc. The dielectric constant of the metamaterial dielectric layer can be adjusted to change the capacitance value of the metamaterial-based variable capacitor, thereby changing the phase shift amount of the metamaterial-based phase shifter. The bias line 109 for changing the dielectric constant of the metamaterial dielectric layer 107 is loaded on the microstrip line 108. In order to reduce the impact of the bias line 109 on the radio frequency signal, the isolation hole 106 is punched on the corresponding bias line 109 at the floor layer 104 where the isolation hole is close to the microstrip line 108. The principle of radio frequency transmission line mismatch caused by the impedance mutation can effectively suppress the phenomenon of radio frequency signal loss caused by the transmission along the bias line. Meanwhile, combined with the choke branch 110 loaded on the bias line 109 having a certain distance from the microstrip line 108, the structure can greatly reduce the shunt attenuation of RF signals by the bias line compared with the conventional bias line.

[0045] According to the liquid crystal metamaterial-based variable capacitor described in Embodiment 1 and the test results of physical prototype working at 12.25 Ghz-12.75 Ghz showing that FOM is 90°/dB and the area required for phase shift 360° is only 1 mm*30 mm in the design with a liquid crystal layer thickness of only 5 μm, the index is better than the existing similar phase shifters.

Embodiment 2

[0046] As shown in FIG. 3, the embodiment of the present invention provides a metamaterial-based variable capacitor structure 201, comprising: the first substrate 102 and the second substrate 103 set oppositely, and the metamaterial dielectric layer 107 located between the first substrate 102 and the second substrate 103, the metal floor layer 104 located between the first substrate 102 and the metamaterial dielectric layer 107, at least two periodically arranged gaps 105 and isolation holes 106 on the metal floor layer 104, the microstrip line 108 between the second substrate 103 and the metamaterial dielectric layer 107, the branches 202, the bias line 109 and choke branch 110 periodically loaded on the microstrip line 108, and two feeding terminals 111 and 112 on both ends of microstrip line 108.

[0047] FIGS. 4, 4(a) and 4(b) are respectively the top views of the first substrate 102 lower surface, the second substrate 103 upper surface, and overall body of the metamaterial-based variable capacitor structure according to a specific embodiment 2 of the present invention. In this structure, the periodically arranged gaps 105 on the floor layer 104 directly facing the microstrip line 108 and the branches 202 periodically loaded on the microstrip line 108 together form the slow-wave transmission structure, so that the transmission route required for phase shift 360° in the metamaterial dielectric layer is shortened, thereby effectively reducing the size of phase shifter and obtaining better FOM.

[0048] The metamaterial-based variable capacitor structure is composed of the metal floor layer 104, the periodically arranged gaps 105, the metamaterial dielectric layer 107, and the microstrip line 108. Among them, the metamaterial dielectric layer 107 is composed of one or multiple layers of variable dielectric constant material, and the material can be the liquid crystal, ferroelectric thin film BST, etc.

[0049] FIG. 4(c) is the equivalent circuit model according to a specific embodiment 2 of the present invention; 501 is the equivalent inductance formed by the gaps 105 and the metal floor layer 104, 601 is the equivalent capacitance formed by the microstrip line 108 and the metal floor layer 104, and 602 is the equivalent variable capacitance formed by the microstrip line 108 and the loaded branches 202 together with the metal floor layer 104.

[0050] The 602 capacitance value can be changed by adjusting the dielectric constant of the metamaterial dielectric layer, thereby changing the phase shift amount of the metamaterial-based phase shifter. The bias line 109 for changing the dielectric constant of the metamaterial dielectric layer 107 is loaded on the microstrip line 108 or branch 202. In order to reduce the impact of the bias line 109 on the radio frequency signal, the isolation hole 106 is punched on the corresponding bias line 109 at the floor layer 104 where the isolation hole is close to the microstrip line 108. The principle of radio frequency transmission line mismatch caused by the impedance mutation can effectively suppress the phenomenon of radio frequency signal loss caused by the transmission along the bias line. Meanwhile, combined with the choke branch 110 loaded on the bias line 109 having a certain distance from the microstrip line 108, the structure can greatly reduce the shunt attenuation of RF signals by the bias line compared with the conventional bias line.

[0051] According to the liquid crystal metamaterial-based variable capacitor described in Embodiment 2 and the test results of physical prototype working at 12.25 Ghz-12.75 Ghz showing that FOM is 72°/dB and the area required for phase shift 360° is only 2.5 mm *3 mm in the design with a liquid crystal layer thickness of only 5 the index is better than the existing similar phase shifters.

Embodiment 3

[0052] As shown in FIG. 5, the embodiment of the present invention provides a metamaterial-based variable capacitor 301. The structure is a curved connection structure extended from the metamaterial-based variable capacitor 101 described in Embodiment 1. This structure makes the routing of phase shifter more flexible, and can better adapt to the routing of phase shifter under different space conditions.

Embodiment 4

[0053] As shown in FIGS. 6, 6(a) and 6(b), the bias line for the metamaterial-based variable capacitors 101, 201 and 301 said in the embodiments of the present invention can be replaced by the bias line 402 made from ITO (indium tin oxide), NiCr (nickel chromium), or some other material with a resistivity greater than 1×105Ω.Math.m. When the bias line 402 is made from ITO (indium tin oxide), NiCr (nickel chromium), or some other material with a resistivity greater than 1×105Ω.Math.m, the bias line structure can be loaded with the isolation hole 106 and choke branch 110 according to Embodiments 1, 2 or 3 or directly loaded without the isolation hole 106 and choke branch 110 on the microstrip line 108. In such case, the thickness of the bias line 402 can be from 10-200 nm, and the choke attenuation can be also decreased by properly controlling the thickness and square resistance of the coating on the bias line 402.

[0054] As shown in FIG. 7, the isolation hole 106 on the floor layer 104 can be either rectangular or circular, or but not be limited to triangular, rhombic, or polygonal hole.

Embodiment 6

[0055] As shown in FIG. 8, the choke branch 110 can be either the loaded fan-shaped or the loaded triangular, or but not be limited to the loaded rectangular structure, etc.

[0056] The above are only the preferred embodiments of the present invention, but the scope of protection of the present invention is not so limited. The changes or replacement that any person skilled in the art can easily think of within the technical scope disclosed by the present invention shall be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.