Production of Precision Micro-Mask and the AMOLED Display Manufactured Therefrom

Abstract

A production method to fabricate precision micro-mask for the production of ultra-high resolution Active-Matrix Organic Light Emitting Diode (AMOLED) display is disclosed. The production process of the micro-mask includes the following processes: S1, select the substrate and cleaning. S2, fabricate the main body of micro-mask on the substrate. The main body of micro-mask includes sequentially preparation of debonding layer, the first metal layer and the second metal layer; or sequentially preparation of organic polymer layer, the first metal layer and the second metal layer. S3, welding the mask frame to the second metal layer after alignment, fabricate perforation through holes in the main body of the micro-mask based on the requirement of the display subpixel design; or fabricate perforation through holes in the micro-mask based on the requirement of the display subpixel design, then welding the mask frame to the second metal of the main body of the micro-mask. The precision micro-mask is completed after debonding from the substrate. With the precision micro-mask prepared, the high efficiency, ultra-high resolution (>1000 ppi) AMOLED display with Red-Green-Blue, or other color combinations, side-by-side architecture can be produced.

Claims

1. A production method to produce a Precision Micro-Mask (PMM) with the following characteristics and processes: S1, clean the selected substrate; S2, fabricate the main body of the PMM, which includes sequentially process debonding layer, the first metal layer and the second metal layer, or sequentially process organic polymer layer, the first metal layer and the second metal layer; S3, attach the mask frame to the second metal layer by laser welding, and fabricate the micro-orifice arrays, based on the requirements of the subpixel of the AMOLED display, through the main body of the PMM, or fabricate the micro-orifice arrays through the main body of the PMM and then attach the mask frame to the second metal layer by laser welding; followed by completing the PMM by removal of the substrate from main body of PMM.

2. As the PMM production processes described in claim 1, the process S2 includes the following characteristics: S21, coat the debonding layer or the organic polymer layer on the substrate; S22, coat the first metal layer on the debonding layer or organic polymer layer; S23, coat the second metal layer on the first metal layer.

3. As the PMM production processes described in claim 2, the process S3 includes the following characteristics: S31, attach and bond the mask frame to the second metal layer by laser welding; S32, remove the substrate from debonding layer or organic polymer layer; S33, by using the laser and the photomask to produce micro-orifice arrays in the main body of the PMM by laser ablation process and complete the PMM fabrication process.

4. As the production processes described in claim 3, the first metal layer and the second metal layer are fabricated in grid structures.

5. As the PMM production processes described in claim 2, the process S3 includes the following characteristics: S31, apply the photoresist layer on the second metal layer; S32, using photolithography processes to expose and develop the pattern of the micro-orifice array openings in the photoresist layer for the subsequent chemical etching step; S33, using the chemical etchant to produce the orifice arrays in the main body of the PMM; S34, attach and bond the mask frame to the second metal layer by laser welding; S35, remove the substrate from debonding layer or organic polymer layer to obtain the completed PMM.

6. As the PMM production processes described in claim 2, it includes the following characteristics: the thickness of the described organic polymer layer is 0.5 μm˜20 μm; the thickness of the described debonding layer is d1, 0.001 μm≤d1≤5 μm; the thickness of the described first metal layer is d2, 0.01 μm≤d2≤0.5 μm; and the thickness of the described second metal layer is d3, 0.1 μm≤d3≤100 μm. The material of the first metal layer may be nickel (Ni), or copper (Cu), or titanium (Ti), or silver (Ag), or chromium (Cr), or cobalt (Co), or gold (Au), or their alloys. The material of the second metal layer may be nickel-cobalt (Ni—Co) series alloys, or iron-nickel series (Fe—Ni) alloys, or iron-nickel-cobalt (Fe—Ni—Co) series alloys.

7. As the PMM production processes described in claim 4, it has the characteristics of that in between metal grids defines the regions for the production of the micro-orifice arrays, the described micro-orifice arrays are fabricated in the described organic polymer layer in the regions; The width of the metal grid is a, 10 μm≤a≤300 μm; the dimension of the micro-orifice array region is b, 1 mm≤b≤320 mm. The size of micro-orifice is c, in the range of 1 μm≤c≤50 μm. The distance between the neighboring micro-orifices, within the same micro-orifice array region, is e, 0.2 μm≤e≤20 μm.

8. As the PMM production processes described in claim 2, it has the characteristics of that the micro-orifice arrays are fabricated in specific regions in main body of the PMM, each micro-orifice array regions contains many micro-orifices. The dimension of the described micro-orifice array region is b, 1 mm≤b≤320 mm, corresponding to the dimensions of the display to pattern with; the distance between adjacent micro-orifice array regions is a, 10 μm≤a≤300 μm; the size of the orifice is c, 1 μm≤c≤50 μm, corresponding to the subpixel of the display to fabricate; the distance between the neighboring micro-orifices, within the same micro-orifice array region, is e, 0.2 μm≤e≤20 μm.

9. A Precision Micro-Mask (PMM) with the characteristics that are produced based on the processes described in claim 1.

10. The Organic Light Emitting Diode (OLED) devices and the OLED displays produced, based on the OLED devices prepared using the PMM produced in claim 9.

11. A method for making a precision micro-mask for production of Active Matrix Organic light Emitting Diode (AMOLED) display, comprising the steps of: depositing a debonding layer on a substrate; depositing a first metal layer on top of the debonding layer; depositing a second metal layer on top of the first metal layer; attaching a mask frame on top of the second metal layer; and fabricating a plurality of orifices according the photo mask.

12. The method of claim 11 further comprising the step of removing the substrate by a laser debonding process.

13. The method of claim 11 further comprising the step of positioning a photomask on top of the mask frame.

14. The method of claim 11 further comprising the step of coating the substrate with an interface bonding control layer to control the bonding between the debonding layer and the substrate.

15. The method of claim 11, wherein the debonding layer is an organic polymer layer and the step of fabricating a plurality of orifices further comprising the steps of: positioning a photomask over the organic polymer layer; and irradiating a high energy laser beam through the photomask.

16. The method of claim 15 further comprising the step of producing a plurality of orifices on the first metal layer and the second metal layer.

17. The method of claim 11 further comprising the step of coating the substrate with a debonding layer, or an organic polymer layer to adjust the bonding strength between the first metal layer above and the substrate below.

18. A precision micro-mask (PMM) for production of Active Matrix Organic light Emitting Diode (AMOLED) display comprising: an organic polymer layer with a surface treatment to control cohesive force; a first metal layer deposited on top of the organic polymer layer; a second metal layer deposited on top of the first metal layer; and a mask frame attached on top of the second metal layer, an inner rim of the mask frame to an outer rim of the second metal layer, wherein a plurality of micro-orifice arrays are produced on the organic polymer layer.

19. The precision micro-mask of claim 18, wherein a plurality of micro-orifice arrays are produced on the first metal layer and the second metal layer.

Description

DESCRIPTION OF THE DRAWINGS

[0048] The advantages of this invention are become obvious from the description below, or can be understood through the practices of this invention with the following illustrative examples:

[0049] FIG. 1. One process diagram to fabricate the Precision Micro-Mask (PMM) disclosed in present invention;

[0050] FIG. 2. The process diagram of the Example 1 to illustrate fabrication process of a Precision Micro Mask (PMM);

[0051] FIG. 2-1. The schematics of the process step S101 described in the Example 1;

[0052] FIG. 2-2. The schematics of the process step S102 described in the Example 1;

[0053] FIG. 2-3. The schematics of the process step S103 described in the Example 1;

[0054] FIG. 2-4. The schematics of the process step S104 described in the Example 1;

[0055] FIG. 2-5. The schematics of the process step S105 described in the Example 1;

[0056] FIG. 2-6. The schematics of the process step S106 described in the Example 1;

[0057] FIG. 2-7. The schematics of the process step S107 described in the Example 1;

[0058] FIG. 3. The process diagram of the Example 2 to illustrate fabrication process of a Precision Micro Mask (PMM);

[0059] FIG. 3-1. The schematics of the process step S201 described in the Example 2;

[0060] FIG. 3-2. The schematics of the process step S202 described in the Example 2;

[0061] FIG. 3-3. The schematics of the process step S203 described in the Example 2;

[0062] FIG. 3-4. The schematics of the process step S204 described in the Example 2;

[0063] FIG. 3-5. The schematics of the process step S205 described in the Example 2;

[0064] FIG. 3-6. The schematics of the process step S206 described in the Example 2;

[0065] FIG. 3-7. The schematics of the process step S207 described in the Example 2;

[0066] FIG. 4. The process diagram of the Example 3 to illustrate fabrication process of a Precision Micro Mask (PMM);

[0067] FIG. 4-1. The schematics of the process step S301 described in the Example 3;

[0068] FIG. 4-2. The schematics of the process step S302 described in the Example 3;

[0069] FIG. 4-3. The schematics of the process step S303 described in the Example 3;

[0070] FIG. 4-4. The schematics of the process step S304 described in the Example 3;

[0071] FIG. 4-5. The schematics of the process step S305 described in the Example 3;

[0072] FIG. 4-6. The schematics of the process step S306 described in the Example 3;

[0073] FIG. 4-7. The schematics of the process step S307 described in the Example 3;

[0074] FIG. 4-8. The schematics of the process step S308 described in the Example 3;

[0075] FIG. 4-9. The schematics of the process step S309 described in the Example 3;

[0076] FIG. 5. The schematic of a Precision Micro Mask (PMM) as disclosed in present invention;

[0077] FIG. 6 The blowup view of A region in the micro-orifice array area shown in FIG. 1;

DESCRIPTION OF SYMBOLS

[0078] 10: substrate; [0079] 20: Debonding layer or organic polymer layer; [0080] 30: The first metal layer; [0081] 40: The second metal layer; [0082] 50: Mask frame; [0083] 60: Photoresist layer; [0084] 70: Photomask; [0085] 1: The region between the mask frame and main body of the precision micro-mask (PMM) for laser welding; [0086] 2: Alignment mark; [0087] 3: Micro-orifice array area in the PMM, corresponding to the subpixel designs of the AMOLED display to be patterned.

BEST MODE

[0088] Hereinafter embodiments of the present invention are described with detailed examples. These embodiments are exemplary; the present invention in not limited thereto, and the present invention is defined by the scope of claims.

[0089] The FIG. 1˜FIG. 6 provide the illustrative explanations of the fabrication process of Precision Micro-Mask (PMM) and the structure of a PMM disclosed in present invention.

[0090] As shown in FIG. 1, the present invention provides a fabrication method to produce Precision Micro Mask (PMM), which includes:

S1, clean the selected substrate;

[0091] S2, fabricate the main body of the PMM, which includes sequentially process debonding layer, the first metal layer and the second metal layer, or sequentially process organic polymer layer, the first metal layer and the second metal layer;

[0092] S3, attach the mask frame to the second metal layer by laser welding, and fabricate the micro-orifice arrays, based on the requirements of the subpixel of the AMOLED display, through the main body of the PMM, or fabricate the micro-orifice arrays through the main body of the PMM and then attach the mask frame to the second metal layer by laser welding; followed by completing the PMM after removal of the substrate.

[0093] The process described above may produce a Precision Micro-Mask (PMM), which may be used as shadow mask to mount in front of the driving array backplane to pattern the depositing OLED device to produce the ultra-high resolution (>1000 PPI) AMOLED display that traditional FMM cannot achieve.

[0094] There is no specific restriction of the type of the organic polymer layer except that it is preferred to select the one with high material stability; low coefficient of thermal expansion (CTE, less than 20 ppm/° C.); and low water absorption (≤1.5 weight %). Which may include the polymer material such as polyimide, polyamide-imide, polyamide, polyethylene, polypropylene, polycarbonate, polyvinyl chloride, polystyrene, and other copolymer resins, or ionomer resins.

[0095] The material for debonding layer includes, but not limited to, organic film, such as coating of polyimide, inorganic oxide or nitride film, or other interface modification compounds, such as silane coupling agents, that may modify the interface bonding strength between the substrate and the first metal layer, so the removal of the substrate from the completed Precision Micro-Mask (PMM) maybe reasonably accomplished.

EXAMPLE 1

[0096] As shown in FIG. 2, the fabrication method to produce a Precision Micro-Mask (PMM) is provided with current example. The FIG. 2-1˜FIG. 2-7 below provide detailed description of the processing steps to fabricate a PMM and the PMM produced thereof.

[0097] As shown in FIG. 2-1, following step S201, select the substrate 10, which maybe semiconductor wafer, silicon wafer, metal substrate, glass or other transparent substrates. The substrate 10 maybe either non-transparent or transparent materials. Clean to remove the residual organics or contaminants from the surface of the selected substrate, using cleaning agents, ultraviolet (UV) light, and/or plasma.

[0098] As shown in FIG. 2-2, according to the step S102 to coat the organic polymer layer (20), for example polyimide, on the substrate (10), followed with drying and curing. The thickness of the organic polymer layer 20 is 0.5˜20 μm. In order to ensure the removal of the PMM from the substrate at the end of fabrication, it maybe necessary to conduct surface modification treatment or coating the organic or inorganic interface bonding control layer to control the cohesive force between the organic polymer layer 20 and the substrate 10 before coating the organic polymer layer, for example polyimide layer in this case.

[0099] As indicated in FIG. 2-3, following the step S103 to coat the first metal layer 30 on organic polymer layer 20. Firstly, conduct the localized surface modification treatment on the organic polymer layer 20. For example, using a photomask to conduct laser treatment to the selected regions on the organic polymer layer, or conduct regional block coating or printing or screen printing to treat the selected surface regions on the polymer layer.

[0100] Secondly, deposit the first metal layer 30 on the organic polymer layer 20; using electroplating or vacuum deposition to deposit a thin layer of the first metal on the selected regions on organic polymer layer 20. The material of the first metal layer 30 may be nickel (Ni), or copper (Cu), or titanium (Ti), or chromium (Cr), or cobalt (Co), or gold (Au), or their alloys. The thickness of the described first metal layer 30 is d2, 0.01 μm≤d2≤0.5 μm. The first metal layer forms a metal grid on the substrate. Between metal grid defines the micro-orifice array regions, which correspond to the size of the AMOLED display to be patterned, to fabricate micro-orifice arrays within. The width of the metal grid is a, 10 μm≤a≤300 μm. The dimension of the micro-orifice region between adjacent metal grids for the fabrication of the micro-orifice arrays is b, 1 mm≤b≤320 mm. However, b is not limited to this size range, but is dependent upon the size of the AMOLED display to produce.

[0101] As shown in FIG. 2-4, according to step S104, the second metal layer 40 is deposited on the first metal layer 30, by using electroplating or vacuum deposition processes. The structure of the second metal layer 40 is the same as that of the first metal layer 30, forming a metal grid structure with the same dimensions. The material of the second metal layer is the high strength, low coefficient of thermal expansion materials, for example: nickel-cobalt (Ni—Co) series alloys, or iron-nickel series (Fe—Ni) alloys, or iron-nickel-cobalt (Fe—Ni—Co) series alloys. For example, Invar (36% Ni-64% Fe), or Super Invar (32% Ni-5% Co-63% Fe), or Kovar (54% Fe-29% Ni-17% Co). The thickness of the described second metal layer 40 is d3, 0.1 μm≤d3≤100 μm. If a large size PMM needs to be fabricated, or the size of the AMOLED display, corresponding to the dimensions of micro-orifice array region, is large, an additional photolithography process may be added to coat another metal layer on the second metal layer 40, similar to the second metal layer used, to increase the thickness of the metal grid regions to increase the mechanical strength and stability of PMM structure, before moving to the next processing step.

[0102] As shown in FIG. 2-5, according to step S105, the mask frame 50 is attached to the second metal layer 40. To attach the mask frame 50 to the second metal layer 40 at the surrounding edge of main body of the PMM, by using laser welding or other bonding methods.

For example, the mask frame 50 may be in circular shape. With alignment, the inner rim area of the lower surface of the mask frame 50 is attached to the outer rim area of the surface of the second metal layer 40 and bond together by laser welding. The mask frame 50 may be in other shapes, depending on the shape of the PMM fabricated.

[0103] As indicated in FIG. 2-6, based on the step S106, the substrate 10 is removed from the organic polymer layer 20 of the PMM. Specifically, separate the substrate 10 from the organic polymer layer 20 of the main body of the completed PMM, by using laser debonding or mechanical debonding process.

[0104] As shown in FIG. 2-7, according to the step S107, the micro-orifice arrays are produced in the organic polymer layer 20 in the micro-orifice array regions, using the laser ablation process with photomask. Specifically, the photomask 70, with micro-orifice array patterns, is positioned above the organic polymer layer 20 in the PMM body. The high energy laser beam irradiates through the transparent portions of photomask, and vaporize the irradiated regions in the organic polymer layer and form micro-orifices in the polymer layer. The size of the orifices c is based on the requirements of the opening dimensions of the PMM, which correspond to the design requirements of the subpixels of the AMOLED display needed. The orifice size c is in the range of 1 μm≤c≤50 μm; the distance between neighboring orifices is e, 0.2 μm≤e≤20 μm. The final form of a completed PMM is shown in the FIG. 5 and FIG. 6. To pattern and deposit the OLED device onto the driving backplane substrate to produce the display, the PMM is mounted on top of the backplane after precision alignment, in a thermal evaporation chamber. During evaporation, the vapor of the OLED device material may pass through the micro-orifice arrays in the PMM and deposit at the backplane to form the light emitting subpixels, after multiple layers of the device are deposited sequentially to form the complete OLED device.

EXAMPLE 2-1

[0105] As shown in FIG. 3, another fabrication method to produce a Precision Micro-Mask (PMM) is provided with current example. The FIG. 3-1˜FIG. 3-7 below provide detailed description of the processing steps to fabricate a PMM and the PMM produced thereof. In current example, the main body of the PMM is composed of the sequentially fabricated debonding layer 20 (in this example the layer 20 represents the debonding layer), the first metal layer 30 and the second metal layer 40.

[0106] As shown in FIG. 3-1, following step S201, select the substrate 10, which maybe semiconductor wafer, silicon wafer, metal substrate, glass or other transparent substrates. Although the substrate 10 maybe either non-transparent or transparent materials, current example uses a non-transparent substrate material. Clean to remove the residual organics or contaminants from the surface of the selected substrate 10, using cleaning agents, ultraviolet (UV) light, and/or plasma.

[0107] As shown in FIG. 3-2, according to the step S202 to coat the debonding layer 20 (in current example, the 20 represents the debonding layer). The debonding layer 20 includes, but not limited to, organic film, such as polyimide, inorganic oxide or nitride film or other interface modification agents, such as silane coupling agents, that may modify the interface cohesion strength between the substrate 10 and the first metal layer 30 and facilitate the final removal of substrate 10 from the PMM main body, after completing the fabrication process. The thickness of the debonding layer 20 is d1, 0.001 μm≤d1≤5 μm.

[0108] As indicated in FIG. 3-3, following the step S203 to coat the first metal layer 30 on the debonding layer 20. The first metal layer 30 is a continuous, un-patterned film, with a thickness of d2, 0.01 μm≤d2≤0.5 μm.

[0109] As shown in FIG. 3-4, according to step S204, the second metal layer 40 is deposited on the first metal layer 30, by using electroplating or vacuum deposition processes. The second metal layer 40 is also a continuous, un-patterned film, with a thickness of d3, 0.1 μm≤d3≤100 μm. If a large size PMM needs to be fabricated, or the size of the AMOLED display, corresponding to the dimensions of micro-orifice array region, is large, an additional photolithography process may be added to coat another metal layer at the non-micro-orifice array regions on the second metal layer 40, using the similar material as the second metal layer used to form a metal grid structure, to increase the thickness of the metal grid regions to increase the mechanical strength and stability of PMM structure, before moving to the next processing step.

[0110] As shown in FIG. 3-5, according to step S205, the mask frame 50 is attached to the second metal layer 40.

[0111] As indicated in FIG. 3-6, based on the step S206, the substrate 10 is removed from the debonding layer 20 of the PMM.

[0112] As shown in FIG. 3-7, according to the step S207, the micro-orifice arrays are produced in the second metal Layer 40, the first metal layer 30 and debonding layer 20 in the micro-orifice array regions, using the laser ablation process with photomask. As the Figure shows, the high energy laser beam passing through the photomask 70, with micro-orifice array patterns, may vaporize the second metal Layer 40, the first metal layer 30 and debonding layer 20 stack in irradiated regions and form the corresponding micro-orifice array patterns in the PMM accordingly. The size of the orifices c is based on the requirements of the opening dimensions of the PMM, which correspond to the design requirements of the subpixels of the AMOLED display needed. The orifice size c is in the range of 1 μm≤c≤50 μm; the distance between neighboring orifices is e, 0.2 μm≤e≤20 μm. With this process, as shown in FIG. 5 and FIG. 6, several micro-orifice array regions are formed in PMM, each region corresponds to the AMOLED display to be patterned, typically in the dimensional range of b, 1 mm≤b≤320 mm, the b maybe larger than 320 mm to fabricate larger AMOLED displays. The distance between the adjacent micro-orifice array regions is a, 10 μm≤a≤300 μm.

EXAMPLE 2-2

[0113] The difference between the Example 2-2 and Example 2-1 is in the substrate 10 used and the structure of the main body of PMM. The present example uses the transparent substrate, such as glass or other transparent substrate. The main body of the PMM in this case is sequentially fabricate organic polymer layer 20, such as polyimide layer (in current example, the organic polymer layer is indicated as 20 in the Figure); the first metal layer 30, and the second metal layer 40. The thickness of the organic polymer layer 20 is in the range of 0.5˜20 μm.

[0114] The fabrication process include:

S201, select a transparent substrate 10 and clean the surface;
S202, coat the organic polymer layer 20, followed by drying and curing processes;
S203, deposit the first metal layer 30 on the organic polymer layer 20;
S204, coat the second metal layer 40 on the first metal layer 30;
S205, using laser welding to attach the mask frame to the second metal layer along the outer rim of the mask;
S206, remove the transparent substrate from the main body of PMM by laser debonding process;
S207, using laser ablation and photomask to irradiate the selected areas in the mask body to remove the second metal layer 40, the first metal layer 30, and the organic polymer layer 20 in the irradiated areas to form micro-orifice arrays in PMM main body. The schematic of the completed PMM is shown in the FIG. 6.

EXAMPLE 3-1

[0115] As shown in FIG. 4, current example provides another fabrication method to produce a Precision Micro-Mask (PMM). The FIG. 4-1˜FIG. 4-9 below provide detailed description of the processing steps to fabricate a PMM and the PMM produced thereof. In current example, the main body of the PMM is composed of the sequentially fabricated debonding layer 20 (in this example the layer 20 represents the debonding layer), the first metal layer 30 and the second metal layer 40.

[0116] As shown in FIG. 4-1, following step S301, select the substrate 10, which maybe semiconductor wafer, silicon wafer, metal substrate, glass or other transparent substrates. Although the substrate 10 maybe either non-transparent or transparent materials, current example uses a non-transparent substrate material. Clean to remove the residual organics or contaminants from the surface of the selected substrate 10, using cleaning agents, ultraviolet (UV) light, and/or plasma.

[0117] As shown in FIG. 4-2, according to the step S302 to coat the debonding layer 20 (in current example, the 20 represents the debonding layer) on cleaned substrate 10. The debonding layer 20 includes, but not limited to, organic film, such as polyimide, inorganic oxide or nitride film or other interface modification agents, such as silane coupling agents, that may modify the interface cohesion strength between the substrate 10 and the first metal layer 30 and facilitate the final removal of substrate 10 from the PMM main body, after completing the fabrication process. The thickness of the debonding layer 20 is d1, 0.001 μm≤d1≤5 μm.

[0118] As indicated in FIG. 4-3, following the step S303 to coat the first metal layer 30 on the debonding layer 20. The first metal layer 30 is a continuous, un-patterned film, with a thickness of d2, 0.01 μm≤d2≤0.5 μm.

[0119] As shown in FIG. 4-4, according to step S304, the second metal layer 40 is deposited on the first metal layer 30, by using electroplating or vacuum deposition processes. The second metal layer 40 is also a continuous, un-patterned film, with a thickness of d3, 0.1 μm≤d3≤100 μm. If the PMM property requires, an additional photolithography process may be added to coat another metal layer at the non-micro-orifice array regions on the second metal layer 40, using the similar material as the second metal layer 40 used to form a metal grid structure, to increase the thickness of the metal grid regions to increase the mechanical strength and stability of PMM structure.

[0120] As shown in FIG. 4-5, according to step S305, the photoresist layer 60 is coated on the second metal layer 40. The thickness of the photoresist layer 60 is d4, 0.5 μm≤d4≤30 μm.

[0121] As indicated in FIG. 4-6, based on the step S306, the pattern of the micro-orifice arrays regions is produced in the photoresist layer 60, by using the photolithography and photomask to exposure the photoresist layer 60, followed with development processes.

[0122] As shown in FIG. 4-7, based on step S307, using etching processes to etch away the second metal layer 40, the first metal layer 30, and the debonding layer 20 underneath at the patterned regions, defined by the photoresist 60, to produce micro-orifice array regions in the main body of the PMM. Specifically, the wet etching processes may be adopted to etch the second metal layer 40 and the first metal layer 30. For example, FeCl3-based or other metal etchant may be used to etch Invar type metal layers. Other etching process may be adopted to etch the debonding layer 20 underneath. After etching, the photoresist 60 is stripped off by wet chemistry. The size of the micro-orifices c in PMM, corresponding to the requirement of the subpixels of the AMOLED display to be fabricated, is in the range of 1 μm≤c≤50 μm, while the distance of adjacent orifices with the same region is e, 0.2 μm≤e≤20 μm. The dimension of the regions of the micro-orifice arrays in PMM is b, corresponding to the dimension of the AMOLED display to fabricate, 1 mm≤b≤320 mm. The distance between adjacent regions of the micro-orifice arrays in the PMM is a, 10 μm≤a≤300 μm. The structure of the PMM is shown in FIG. 5 and FIG. 6. In case the PMM structure need to be strengthened for stability consideration, additional metal layer may be added for form a metal grid structure at the non-micro-orifice array regions, by using an additional photolithography and metal coating steps, before moving to step S308.

[0123] As indicated in FIG. 4-8, according to step S308, the mask frame 50 is attached to the second metal layer 40 near the edge of the substrate 10, along the outer rim of the PMM.

[0124] As shown in FIG. 4-9, based on the step S309, the substrate 10 is separated from debonding layer 20; the fabrication of PMM is completed.

EXAMPLE 3-2

[0125] The difference between the Example 3-2 and Example 3-1 is in the substrate 10 used and the structure of the main body of PMM. The present example uses the transparent substrate, such as glass or other transparent substrate. The main body of the PMM in this case is sequentially fabricate organic polymer layer 20, such as polyimide layer (in current example, the organic polymer layer is indicated as 20 in the Figure); the first metal layer 30, and the second metal layer 40. The thickness of the organic polymer layer 20 is in the range of 0.5˜20 μm, the thickness of the second metal layer is d3, 0.1μm≤d3≤100 μm.

[0126] The fabrication process include:

[0127] S301, select a transparent substrate 10 and clean the surface;

[0128] S302, coat the organic polymer layer 20, followed by drying and curing processes;

[0129] S303, deposit the first metal layer 30 on the organic polymer layer 20;

[0130] S304, coat the second metal layer 40 on the first metal layer 30;

[0131] S305, coat the photoresist layer 60 on the second metal layer 40;

[0132] S306, pattern the micro-orifice arrays in photoresist layer 60 by photolithographic exposure with photomask, followed by development processes to produce the pattern for subsequent etching;

[0133] S307, etch the micro-orifices in the second metal layer 40, the first metal layer 30, and the organic polymer layer 20 in the PMM main body area to transfer the pattern of the photoresist to the PMM to form micro-orifice array regions in PMM.

[0134] S308, attach the mask frame 50 to the PMM at the outer edge regions of PMM near the substrate.

[0135] S309, remove the substrate from the organic polymer layer of PMM by debonding process and complete the PMM fabrication process.

[0136] As shown in FIG. 6, the schematics of the structure of the Precision Micro-Mask (PMM) produced by the examples described. Region 1 indicates the non-micro-orifice array region that mask frame may use to attach to the main body of the PMM, using laser welding or other bonding methods;

[0137] Region 2 indicates the alignment structures, the alignment marks in the PMM are used to accurately align the PMM to the alignment mark on the backplane substrate of AMOLED display underneath before mounted to the thermal evaporator for OLED device deposition. Once the accurate alignment is confirmed, both PMM and backplane substrate is fixed magnetically and mounted on the evaporator for evaporation of OLED devices. The OLED device layers are deposited through the orifices in the PMM to form the subpixels on the driving backplane substrate. The alignment marks in PMM may be adjusted or modified based on the requirement of the alignment marks on the driving backplane and the capability requirements of the alignment system in the thermal evaporator;

[0138] Region 3 represents the regions of micro-orifice arrays, which corresponds to the subpixel regions on the driving backplane of the Active-Matrix OLED (AMOLED).

[0139] The Precision Micro-Mask (PMM) produced by the examples described in present invention, may be used with different driving backplanes of AMOLED display to deposit the desired OLED devices to form an ultra-high resolution ((>1000 PPI) full color AMOLED display with RGB side-by-side architecture. The driving backplane may include, but is not limited to, Si-based CMOS driving backplane, Low Temperature Poly Silicon Thin-Film-Transistor (LTPS-TFT) backplane, or oxide TFT backplane. Since the OLED device is composed of multiple thin layers, multiple numbers of metal masks may be needed. If different color of OLED device has the same geometric dimensions, it is possible to use the same PMM to pattern different device, by precisely shifting the PMM to the desired position, realigning the PMM to the driving backplane before fixation for deposition. The full color AMOLED display may be achieved by using red, green and blue OLED devices as subpixels, or other color combinations, depending of the AMOLED display characteristics required.

[0140] Because very thin main body of the PMM may be produced with present invention, the shadow effect of the PMM to the OLED device maybe dramatically reduced, and thus very uniform, large light emitting device (or called large aperture ratio) may be produced for the final AMOLED. Therefore, OLED devices with uniform, high power efficiency may be produced with PMM as shadow mask for patterning OLED device. Moreover, AMOLED display with superior image quality, reliability and lifetime performance may be achieved.

[0141] Besides using the PMM for the patterning OLED devices for the AMOLED display, the present invention may also be applied to pattern other organic materials and device that are susceptible to the reactions with processing chemical, ambient moisture or oxygen. The present invention may also be applied to produce ultra-high resolution PMM for patterning large size AMOLED displays. The PMM may be monolithic or by integrating smaller modular PMMs into larger dimensions to serve the purpose.

[0142] The examples disclosed in present invention include the circular substrate; it is also applicable to produce PMM in different geometric shapes and dimensions. To pattern different shapes and different sizes of AMOLED display.

[0143] The present invention may fabricate ultra-high resolution Precision Micro-Mask (PMM) that enable the production of ultrahigh resolution AMOLED display with emitting device side-by-side architecture, for example, Red-Green-Blue side-by-side (RGB SBS); Passive Matrix OLED (PMOLED), flexible and glass based OLED display, Si-based micro-OLED, transparent OLED displays that maybe used for applications such as wearables, such as the smart glasses for Virtual Reality (VR), Mixed Reality (MR), Augmented Reality (AR), electronic skin, automotive displays, mobile device, smart phones, e-Books, e-Papers, television, personal computer, portable notebooks, foldable and rollable OLED displays etc.

[0144] The examples and descriptions in present invention is exemplary. In the description of present invention, “the feature”, “for example” may include one or multiple features or examples, without being listed exhaustively. Although present invention is illustrated with some Examples, so it is understandable to the normal technical people in the field, there are possible variations, modifications, replacement, and change could be made based on the principles and methods disclosed within. The scope of present invention is defined by the claims and their equivalents.