HOLDING DEVICE, AND USE OF THE HOLDING DEVICE

Abstract

A holding device for holding a plurality of substrates for plasma-enhanced deposition of a layer from the gas phase on the substrates, having: inner carrier plates, arranged parallel to one another and designed to carry substrates on mutually opposite sides; outer carrier plates, arranged parallel to the inner carrier plates and having an inner side facing the inner carrier plates, and an outer side facing away from the inner carrier plates, wherein each outer carrier plate is designed to carry one or more substrates on its inner side and to be free of substrates on its outer side; and shielding plates which are each arranged at a distance from the outer side of the outer carrier plate such that, as seen in a plan view of the outer carrier plates, the shielding plates at least predominantly shield the outer carrier plates, wherein each shielding plate is free of substrates.

Claims

1. A holding apparatus for holding a plurality of substrates in a plasma-assisted deposition of a layer from a gas phase onto the substrate, comprising: carrier inner plates arranged parallel to one another which are each configured for carrying substrates on opposite sides, carrier outer plates arranged parallel to the carrier inner plates having an inner surface facing the carrier inner plates and an outer surface facing away from the carrier inner plates, wherein each carrier outer plate is configured for carrying one or more substrates on its inner surface and to be substrate-free on its outer surface, and shielding plates which are arranged in each case spaced apart from the outside of the carrier outer plate such that the shielding plates shade the carrier outer plates in a plan view of the carrier outer plates, wherein each shielding plate is configured to be substrate-free.

2. The holding apparatus as claimed in claim 1, wherein the shielding plates and the carrier outer plates and the carrier inner plates are flat and arranged substantially parallel to one another and/or in that the shielding plates are arranged in each case in parallel spaced apart from the outer surface of the carrier outer plate.

3. The holding apparatus as claimed in claim 1, wherein length and/or width measurements of the shielding plates are smaller than length and/or width measurements of the carrier outer plates.

4. The holding apparatus as claimed in claim 1, wherein the shielding plates are free from an electrical contact or have the same polarity as the carrier outer plates immediately adjacent to the shielding plates.

5. The holding apparatus as claimed in claim 1, wherein each shielding plate comprises a cooling structure.

6. The holding apparatus as claimed in claim 5, wherein the cooling structure is in the form of a rib-like and/or wave-shaped surface structure of each shielding plate.

7. The holding apparatus as claimed in claim 1, wherein the shielding plates are multilayered.

8. The holding apparatus as claimed in claim 1, wherein the shielding plates are made of a base material selected from the group of graphite, carbon fiber-reinforced plastic or carbon fiber-reinforced carbon.

9. The holding apparatus as claimed in claim 8, wherein outer surfaces of the shielding plates are provided with a coating in the form of a metal layer.

10. The holding apparatus as claimed in claim 1, wherein the carrier inner plates and the carrier outer plates comprise cutouts in which the substrates may be accommodated and/or in that the shielding plates are free from cutouts, openings and holes.

11. A method of holding substrates, comprising arranging substrates in the holding apparatus as claimed in claim 1 and performing a plasma-assisted deposition from the gas phase.

12. The holding apparatus as claimed in claim 8, wherein the metal layer is a noble metal layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Further properties and advantages of the invention will be clearly described below by way of example in conjunction with the embodiment shown in the figure. In the figures which are schematic and not to scale:

[0036] FIG. 1 shows a sectional view of a process chamber of a chemical deposition apparatus in which a holding apparatus according to the invention is arranged.

DETAILED DESCRIPTION

[0037] FIG. 1 shows a sectional view of a process chamber of a chemical deposition device in which a holding apparatus according to the invention is arranged. The holding apparatus according to the invention is arranged in a process chamber 5 of a tubular PECVD deposition apparatus.

[0038] The holding apparatus comprises a plurality of carrier inner plates 1 arranged parallel to one another. Each carrier inner plate 1 is configured to carry one or more substrates 4 on opposite sides. The holding apparatus further comprises two carrier outer plates 2 arranged parallel to the carrier inner plates 1, each having an inner surface facing the carrier inner plates 1 and an outer surface facing away from the carrier inner plates 1. Each carrier outer plate 2 is configured to carry one or more substrates 4 on its inner surface and to be substrate-free on its outer surface, so that it has no substrate on its outer surface during deposition of layers. The carrier inner plates 1 and the carrier outer plates 2 are connected to one another via one or more rods (not shown) and spaced apart from one another at a predetermined distance via spacers (likewise not shown).

[0039] The holding apparatus further comprises two shielding plates 3 which are arranged in each case spaced apart from the outer surface of the carrier outer plate 2 such that the shielding plates 3 at least very largely shade the carrier outer plates 2 in a plan view of the carrier outer plates 2. Each shielding plate 3 is configured to be substrate-free, i.e. said plates do not comprise any structures allowing securing of a substrate or a plurality of substrates.

[0040] The holding apparatus is arranged in the process chamber 5 to deposit on the substrates 4 one or more layers by chemical gas phase reaction. To this end the process chamber 5 is heated via a heating apparatus (not shown), as a result of which the heating apparatus including the substrate 4 and the wall of the tubular process chamber 5 are likewise heated. The wall of the process chamber 5 radiates heat, as indicated by the short arrows emanating from the wall of the process chamber. The shielding plates 3 very largely shield the outer carrier plates 2 from the thermal radiation which is emitted from the wall of the process chamber 5 in the direction of the outer carrier plates 2. As a result, a portion of the thermal radiation from the wall of the process chamber 5 acts predominantly on the shielding plates 3 initially and on the carrier outer plates 2 only subsequently, wherein the remaining portion of the thermal radiation from the wall of the process chamber is incident on the carrier inner plates 1 and the carrier outer plates 2. In the case of temperature kinetics of the shielding plate optimized for the specific deposition process a substantially similar temperature profile for the carrier outer plates versus the carrier inner plates can be realized.

TABLE-US-00001 List of reference numerals 1 carrier inner plates 2 carrier outer panels 3 shielding plates 4 substrate 5 process chamber